JPH0789573B2 - Semiconductor element container - Google Patents

Description

TECHNICAL FIELD The present invention relates to a semiconductor device container, and more particularly to a container for microwave semiconductor devices used in a high frequency band.

[Conventional technology]

As the frequency of the high-frequency transistor container increases,
Although the substrate forming the container is further miniaturized, at the same time, problems with airtightness and assembling workability arise. As a container in which airtightness is particularly emphasized, for example, as shown in FIG. 2, an insulating wall member 4 fixed on an insulating container base 101.
The metallization layer 5 for sealing is provided on the upper surface of the wall member 4, and the metallization layer 7 for sealing is further provided on the peripheral portion of the cap 111 to form the metallization layers 5, 7 above and below.
However, a sealing metal 6 such as gold tin is sandwiched between them for close sealing (first conventional example). Further, as a container in which workability is emphasized, as shown in FIG. 3, a printed ceramic 205 is provided on the cap sealing surface of the container base 101, and a glass material 207 is provided on the sealing surface of the cap 211. , Sealing second
There is a conventional example of.

[Problems to be solved by the invention]

In the conventional example shown in FIG. 2, by providing the insulating wall member 4, a sealing metal 6 such as gold tin can be used, and a container having excellent airtightness can be realized. The arm or collet at the time of supply and the wedge or capillary at the time of wire bonding come into contact with the wall member 4, so that the workability of the assembly process is extremely deteriorated, which is a major obstacle to automation.

In the conventional example shown in FIG. 3, there is no wall member 4 as shown in FIG. 2 and there is no obstacle to automation at the time of assembly, but only an insulating material such as a glass material 207 can be used as a sealing material. For this reason, compared to the one using a metal such as gold and tin, only the airtightness is inferior, and a highly reliable product cannot be manufactured. As described above, the container having the conventional structure sacrifices one of airtightness and assembling workability.

It is an object of the present invention to provide a semiconductor element container which solves the above-mentioned problems and can achieve both airtightness and assembly workability.

[Means for solving problems]

The structure of the semiconductor element container of the present invention has a two-step shape in which the substantially central portion of the upper main surface of the insulating container substrate is at a high position and the peripheral portion of the substantially central portion is at a lower position, A metallization layer for fixing the semiconductor element and a metallization layer for leading out the input / output electrode are formed at a position, and the metallization layer for leading out the input / output electrode is provided on the side surface of the base between the high position and the low position. A layer is formed, a metallization layer following the metallization layer on the side surface is formed at the low position, an insulating wall member is provided at a distance from the metallization layer on the side surface at the low position, The member is formed such that the upper main surface of the member has substantially the same height, and the metallized layer on the upper main surface of the member and the metallized layer of the cap are sealed with metal.

〔Example〕

 The present invention will now be described in detail with reference to the drawings.

FIG. 1 is a sectional view showing a semiconductor device container according to an embodiment of the present invention. As shown in the figure, the present semiconductor element container is formed such that the upper main surface of the convex insulating container base 1 and the upper main surface of the insulating wall member 4 have substantially the same height. A transistor pellet 10 is fixed to the metallized layer 2 provided on the convex insulating container substrate 1. The metallized layer 2 is electrically connected to at least the ground side lead 15. The input side lead 3 is electrically connected to the input side electrode leading metallization layer 8. The metallizing layer 5 for sealing provided on the upper surface of the insulating wall member 4 is a metal 6 for sealing together with the metallizing layer 7 for sealing provided on the cap 11.
To hermetically seal the container and the cap 11. A wire 9 for input side electrode wiring, a wire 12 for output side electrode wiring, an output side electrode leading metallization layer 13 electrically connected to the output side lead 14, and the like are provided.

As shown in FIG. 1, the metallization layers 8 and 13 formed at high positions on the upper main surface of the substrate 1 are electrically connected to the metallization layers on the side surfaces between the high positions and the low positions, respectively. And is electrically connected to the metallization layer on the upper main surface at a lower position. Further, the member 4 and the metallized layer on the side surface are separated from each other.

〔The invention's effect〕

As described above, according to the present invention, since the upper surface of the container base that is the transistor pellet mounting surface and the upper surface of the wall member that is the sealing surface can be formed at substantially the same height, the workability of assembly is improved. Since metal sealing can be performed, it is possible to obtain a highly reliable mass-producible container having excellent airtightness. Further, according to the present invention, since the metallized layer on the side surface is separated from the insulating wall member, there is no concern that a short circuit accident will occur at the time of sealing with the sealing metal on this member, and particularly the micro wall There is an effect that a low loss container suitable for a wave semiconductor device can be obtained.

The description of the above embodiment assumes a FET type transistor, but the same applies to the case of a bipolar type transistor.

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor device container according to an embodiment of the present invention, FIG. 2 is a sectional view showing a microwave semiconductor device container according to a first conventional example, and FIG. 3 is a second conventional example. It is sectional drawing which shows the container for wave semiconductor elements. DESCRIPTION OF SYMBOLS 1 ... Convex insulating container substrate, 2 ... Pellet fixing metallization layer, 3 ... Input side lead, 4 ... Insulating wall member,
5: metallizing layer for sealing the container side, 6: sealing metal,
7 ... Cap side sealing metallization layer, 8 ... Input side electrode lead-out metallization layer, 9 ... Input side electrode wiring wire, 10 ... Transistor pellet, 11 ... Cap, 12
...... Output side electrode wiring wire, 13 …… Output side electrode lead-out metallized layer, 14 …… Output side lead, 15 …… Ground side lead, 101 …… Insulating container base, 111, 211 …… Cap, 20
5 …… Printed ceramic, 207 …… Encapsulating glass material.

Claims (1)

[Claims] 1. A semiconductor device having an upper main surface of an insulative container base having a two-tiered shape so that a substantially central portion is located at a high position and a peripheral portion of the substantially central portion is located at a lower position, and the semiconductor element is located at the higher position. To form a metallized layer for adhering to and a metallized layer for leading out the input / output electrodes, and forming a metallized layer following the metallized layer for leading out the input / output electrodes on the side surface of the base between the high position and the low position, A metallization layer following the metallization layer on the side surface is formed at the low position, and an insulating wall member is provided at the low position so as to be spaced apart from the metallization layer on the side surface. A semiconductor element container, wherein the member is formed so that the surface thereof has substantially the same height, and the metallized layer on the upper main surface of the member and the metallized layer of the cap are sealed with metal.