JPH079384Y2 - Semiconductor conversion device - Google Patents
Semiconductor conversion deviceInfo
- Publication number
- JPH079384Y2 JPH079384Y2 JP5989788U JP5989788U JPH079384Y2 JP H079384 Y2 JPH079384 Y2 JP H079384Y2 JP 5989788 U JP5989788 U JP 5989788U JP 5989788 U JP5989788 U JP 5989788U JP H079384 Y2 JPH079384 Y2 JP H079384Y2
- Authority
- JP
- Japan
- Prior art keywords
- shaft
- peripheral surface
- inner peripheral
- conversion device
- insulating tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【考案の詳細な説明】 〔考案の目的〕 (産業上の利用分野) 本考案は半導体素子とこの半導体素子を冷却するための
冷却フィンを組合わせた半導体変換装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a semiconductor conversion device in which a semiconductor element and a cooling fin for cooling the semiconductor element are combined.
(従来の技術) 従来、半導体変換装置は複数個の平形のサイリスタやGT
O等を冷却フィンと交互に重ね合せて電力容量を大きく
している。この一例としては第4図および第5図に示す
半導体変換装置1がある。この半導体変換装置1のうち
の装置本体2はサイリスタやGTO等の4個の半導体素子
3を5個の冷却フィン4と交互に重ね合せたものであ
る。このように重ね合わされた装置本体2のうち、両端
の冷却フィン4の外側には絶縁碍子5a、5bが隣接してい
る。一方の絶縁碍子5aの外側面は一方の取付板6aに当接
しており、他方の絶縁碍子5bの外側面の中心部は加圧板
7に固着された円錐座8に当接している。加圧板7は皿
ばね9を介して他方の取付板6bに隣り合っている。ま
た、装置本体2の軸線を挟んで、それぞれの冷却フィン
4の両側部には貫通孔10が形成されており、この貫通孔
10には締付部材11が挿入されている。この締付部材11は
絶縁管12の内周面にシャフト13が接触状態で挿入された
ものである。このシャフト13の一端は頭部14となってお
り、他端にはねじが形成されている。このシャフト13を
一方の取付板6aから他方の取付板6bの外側に突き出し、
このシャフト13他端をナット15によってねじ締めする。
このねじ締めによって半導体素子3と冷却フィン4は円
錐座8と一方の取付板6aとの間の圧力を受けて組み付け
られる。この時、皿ばね9は半導体素子3と冷却フィン
4が所定の圧力を受けるように圧力調節の作用をし、ま
た、半導体素子3と冷却ファン4の伸縮に応じて圧力を
吸収する作用をする。このような半導体変換装置1は第
4図に矢印B−Bで表わした第5図の断面図に示すよう
に、冷却フィン4の貫通孔10の内周面とシャフト13の外
周面との間には、空気16と絶縁管12との二種類の媒質が
介在した状態となっている。即ち、冷却フィン4とシャ
フト13との間の絶縁は空気16による絶縁と絶縁管12によ
る絶縁とによってなるものである。(Prior Art) Conventionally, a semiconductor conversion device has been composed of a plurality of flat thyristors and GTs.
The power capacity is increased by alternately superimposing O etc. on the cooling fins. An example of this is the semiconductor conversion device 1 shown in FIGS. 4 and 5. The device main body 2 of the semiconductor conversion device 1 is formed by alternately stacking four semiconductor elements 3 such as thyristors and GTOs with five cooling fins 4. Insulators 5a and 5b are adjacent to the outer sides of the cooling fins 4 at both ends of the apparatus main body 2 stacked in this way. The outer side surface of one insulator 5a is in contact with one mounting plate 6a, and the center portion of the outer side surface of the other insulator 5b is in contact with a conical seat 8 fixed to the pressure plate 7. The pressure plate 7 is adjacent to the other mounting plate 6b via the disc spring 9. Further, through holes 10 are formed on both sides of each cooling fin 4 with the axis of the device body 2 interposed therebetween.
A tightening member 11 is inserted in 10. The fastening member 11 is formed by inserting a shaft 13 in contact with the inner peripheral surface of an insulating tube 12. The shaft 13 has a head 14 at one end and a screw at the other end. This shaft 13 projects from one mounting plate 6a to the outside of the other mounting plate 6b,
The other end of the shaft 13 is screwed with a nut 15.
By this screw tightening, the semiconductor element 3 and the cooling fin 4 are assembled by receiving the pressure between the conical seat 8 and the one mounting plate 6a. At this time, the disc spring 9 acts to adjust the pressure so that the semiconductor element 3 and the cooling fin 4 receive a predetermined pressure, and also acts to absorb the pressure in accordance with the expansion and contraction of the semiconductor element 3 and the cooling fan 4. . Such a semiconductor conversion device 1 is provided between the inner peripheral surface of the through hole 10 of the cooling fin 4 and the outer peripheral surface of the shaft 13 as shown in the sectional view of FIG. In this state, two types of media, air 16 and insulating tube 12, are interposed. That is, the insulation between the cooling fins 4 and the shaft 13 is the insulation by the air 16 and the insulation tube 12.
シャフト13と絶縁管12のそれぞれの表面の電界強度は第
5図に示すようにシャフト13の半径r1、絶縁管12の半径
r2、冷却フィン4の貫通孔10の半径r3、空気の誘電率ε
1、絶縁管12の誘電率ε2の関数として求められる。今、
シャフト13の直径を8〜16mm、絶縁管12の誘電率を4〜
5とすれば、シャフト13の表面の電界強度が最も高く、
その電界強度Eは次の式によって求められる。As shown in FIG. 5, the electric field strengths on the surfaces of the shaft 13 and the insulating tube 12 are the radius r 1 of the shaft 13 and the radius of the insulating tube 12, respectively.
r 2 , radius r 3 of the through hole 10 of the cooling fin 4, air permittivity ε
1 , obtained as a function of the dielectric constant ε 2 of the insulating tube 12. now,
The shaft 13 has a diameter of 8 to 16 mm, and the insulating tube 12 has a dielectric constant of 4 to
If the value is 5, the electric field strength on the surface of the shaft 13 is the highest,
The electric field strength E is obtained by the following formula.
E=V/{(1/ε1lur2/r1)+(1/ε2lur3/r2)}ε1r
1 一般に絶縁物の絶縁耐力は空気よりも大きいが、冷却フ
ィン4の貫通孔10と絶縁管12との間隔G1が小さい場合
は、上式の電界強度Eが30kv/cm程度になると、空気16
だけが部分的に破壊されてコロナ放電を生ずる。このよ
うにコロナ放電を生ずると絶縁管12は影響を受けて劣化
することが考えられる。E = V / {(1 / ε 1 lur 2 / r 1 ) + (1 / ε 2 lur 3 / r 2 )} ε 1 r
1 Generally, the dielectric strength of an insulator is larger than that of air, but if the gap G1 between the through hole 10 of the cooling fin 4 and the insulating tube 12 is small, the air strength E of the above formula becomes about 30 kv / cm
Only part of it is destroyed resulting in a corona discharge. When the corona discharge is generated in this manner, the insulating tube 12 may be affected and deteriorate.
しかし、上記のような構成の半導体変換装置1はコロナ
放電の発生を防止するために、冷却フィン4の貫通孔10
の径およびシャフト13の径を所定の値に設定している。
また、半導体変換装置1を組み立てるときは、貫通孔10
とシャフト13が偏心しないように、治工具を用いて絶縁
管12の外周面と貫通孔10の内周面との間隔G1、および、
貫通孔10の内周面とシャフト13の外周面との間隔G2を一
定に保つようにしている (考案が解決しょうとする課題) しかしながら上記した従来の半導体変換装置1の構成で
は、治工具を使用しても冷却フィン4の貫通孔10の内周
面と絶縁管12の外周面との間隔G1を一定に保つように組
み立てることは非常に難しく、半導体素子3の交換のと
きはナット15を緩めるので貫通孔10とシャフト13は偏心
してしまい、シャフト13が貫通孔10の内周面に接触して
しまう可能性がある。この接触を避けるための調整作業
時間の浪費は大きく、また、半導体変換装置1が制御盤
に取付けられた状態で半導体素子3の交換を行うと、貫
通孔10の内周面と絶縁管12の外周面との間隔G1を確認す
ることができい。However, in the semiconductor conversion device 1 having the above-described configuration, in order to prevent the occurrence of corona discharge, the through hole 10 of the cooling fin 4 is formed.
And the diameter of the shaft 13 are set to predetermined values.
Also, when assembling the semiconductor conversion device 1, the through hole 10
And the shaft 13 so as not to be eccentric, a gap G1 between the outer peripheral surface of the insulating tube 12 and the inner peripheral surface of the through hole 10 using a jig, and
The gap G2 between the inner peripheral surface of the through hole 10 and the outer peripheral surface of the shaft 13 is kept constant (problems to be solved by the invention). However, in the above-described configuration of the conventional semiconductor conversion device 1, jigs and tools are used. Even if it is used, it is very difficult to assemble it so that the gap G1 between the inner peripheral surface of the through hole 10 of the cooling fin 4 and the outer peripheral surface of the insulating tube 12 is kept constant. Since it is loosened, the through hole 10 and the shaft 13 are eccentric, and the shaft 13 may come into contact with the inner peripheral surface of the through hole 10. The adjustment work time for avoiding this contact is wasted, and if the semiconductor element 3 is replaced while the semiconductor conversion device 1 is attached to the control panel, the inner peripheral surface of the through hole 10 and the insulating pipe 12 are not replaced. It is not possible to confirm the distance G1 from the outer peripheral surface.
本考案は上記課題を解決するためになされたものであっ
て、冷却フィンの貫通孔の内周面と締付部材の外周面と
の間隔を常に、かつ正確に保つことができ、また、組み
立てが容易な半導体変換装置を提供することを目的とす
る。The present invention has been made to solve the above problems, and can always and accurately maintain the distance between the inner peripheral surface of the through hole of the cooling fin and the outer peripheral surface of the tightening member. It is an object of the present invention to provide a semiconductor conversion device that can be easily manufactured.
(課題を解決するための手段) 上記目的を達成するために本考案は、平形半導体素子と
この半導体素子を冷却する冷却フィンとを交互に重ね合
せた装置本体を形成し、この装置本体の一端から絶縁管
にシャフトを挿入した締付部材をそれぞれの冷却フィン
に形成された貫通孔を通して装置本体の他端に突き出さ
せ、締付部材によって装置本体を締付けてなる半導体変
換装置において、締付部材は、それぞれの冷却フィンに
形成された貫通孔の内周面に接触した状態で挿入された
絶縁管と、この絶縁管内に挿入されたシャフトと、この
シャフトの外周面と絶縁管の内周面との間で、かつシャ
フトの軸方向に適当な間隔をもった少なくとも二箇所に
配置され、シャフトの外周面と絶縁管の内周面との間を
等間隔に保つスペーサとを備えてなるものである。(Means for Solving the Problems) In order to achieve the above object, the present invention forms an apparatus main body in which flat semiconductor elements and cooling fins for cooling the semiconductor elements are alternately stacked, and one end of the apparatus main body is formed. A semiconductor conversion device in which a fastening member having a shaft inserted into an insulating pipe is projected to the other end of the device body through a through hole formed in each cooling fin, and the device body is fastened by the fastening member. Is an insulating tube inserted in contact with the inner peripheral surface of the through hole formed in each cooling fin, a shaft inserted in this insulating tube, the outer peripheral surface of this shaft and the inner peripheral surface of the insulating tube. And spacers which are arranged at least at two positions with an appropriate interval in the axial direction of the shaft and which keep the outer peripheral surface of the shaft and the inner peripheral surface of the insulating tube at equal intervals. Is.
(作用) 上記のような構成の半導体変換装置の締付部材は、それ
ぞれの冷却フィンの貫通孔に挿入された絶縁管内にシャ
フトを挿入し、このシャフトの軸方向で、かつシャフト
と絶縁管との間の少なくとも二箇所にスペーサを配置し
てシャフトの外周面と絶縁管の内周面との間を等間隔に
保つ。(Operation) In the tightening member of the semiconductor conversion device having the above-described configuration, the shaft is inserted into the insulating pipe inserted into the through hole of each cooling fin, and the shaft and the insulating pipe are connected in the axial direction of the shaft. Spacers are arranged at least at two places between the shafts to keep the outer peripheral surface of the shaft and the inner peripheral surface of the insulating tube at equal intervals.
(実施例) 以下に本考案の実施例を図面に基づいて説明する。第1
図は本考案の半導体変換装置に使用される締付部材の一
実施例を示している。この締付部材は第4図に矢印A−
Aによって示す拡大断面図であり、本考案は従来の技術
の項で説明した第4図を併用する。なお、本考案の半導
体変換装置は第4図および第5図に基づいて従来の技術
の項で説明したものと同じ構成を有するので、その構成
には同じ符号を付して詳細な説明は省略する。(Embodiment) An embodiment of the present invention will be described below with reference to the drawings. First
The drawing shows an embodiment of a fastening member used in the semiconductor conversion device of the present invention. This fastening member is indicated by the arrow A- in FIG.
FIG. 4 is an enlarged sectional view indicated by A, and the present invention also uses FIG. 4 described in the section of the related art. Since the semiconductor conversion device of the present invention has the same configuration as that described in the section of the prior art based on FIGS. 4 and 5, the same reference numerals are given to the configurations and detailed description thereof is omitted. To do.
第1図に示す締付部材11について説明すると、まず、締
付部材11は絶縁管12の内部に絶縁管12の内径よりも小さ
い径のシャフト13が挿入されたものである。絶縁管12は
冷却フィン4に形成された貫通孔10の内径に近い外径寸
法であり、それぞれの貫通孔4の内周面に接触状態で挿
入されている。絶縁管12は一方の取付板6aの内側から他
方の取付板6bの内側までの長さである。この絶縁管12の
内部に挿入されたシャフト13の一端には頭部14が形成さ
れており、他端にはねじが形成されている。このような
シャフト13が一方の取付板6aから、それぞれの貫通孔10
に挿入された絶縁管12の内部を通り、他方の取付板6bの
外側に突き出ている。絶縁管12に挿入されたシャフト13
のうちの一方の絶縁碍子5aと他方の絶縁碍子5bに隣り合
った部分、即ち、装置本体2の両端に配置された冷却フ
ィン4と一方の取付板6aとの間、および加圧板7との間
のシャフト13の部分には、第2図に示すようにスペーサ
リング17が取り付けられている。このスペーサリング17
は冷却フィン4とシャフト13の間において、シャフト13
の表面の電界強度が高くなるのを避ける位置に配されて
いる。スペーサリング17はプラスチック材料によってな
るものであり、シャフト13に形成された溝18に装着され
る。このように装着されたスペーサリング17は絶縁管12
の内周面に対して弾力性を持つものであり、シャフト13
の外周面と絶縁管12の内周面との間を等間隔に保つ。ま
た、半導体素子3を交換するときはシャフト13のねじを
緩めて行い、交換後、シャフト13をねじ締めしてもシャ
フト13の外周面と絶縁管12の内周面との間隔は変わるこ
とはない。さらに、冷却フィン4を交換するときは締付
部材11をそれぞれの冷却フィン4の貫通孔10から引き抜
き、交換後に再度、締付部材11を貫通孔10に挿入し、そ
して、締付けてもシャフト13の外周面と絶縁管12の内周
面との間隔は変わることはない。The tightening member 11 shown in FIG. 1 will be described. First, the tightening member 11 is formed by inserting a shaft 13 having a diameter smaller than the inner diameter of the insulating tube 12 into the insulating tube 12. The insulating tube 12 has an outer diameter dimension close to the inner diameter of the through hole 10 formed in the cooling fin 4, and is inserted in the inner peripheral surface of each through hole 4 in a contact state. The insulating tube 12 has a length from the inside of the one mounting plate 6a to the inside of the other mounting plate 6b. A head 14 is formed at one end of a shaft 13 inserted into the insulating tube 12, and a screw is formed at the other end. Such a shaft 13 is attached to one of the mounting plates 6a through the respective through holes 10
It passes through the inside of the insulating tube 12 inserted into the other side and projects to the outside of the other mounting plate 6b. Shaft 13 inserted in insulation tube 12
Of the insulating fins 5a on one side and the insulating fins 5b on the other side, that is, between the cooling fins 4 arranged on both ends of the apparatus main body 2 and the one mounting plate 6a, and between the pressure plate 7. A spacer ring 17 is attached to the portion of the shaft 13 between them as shown in FIG. This spacer ring 17
Between the cooling fin 4 and the shaft 13, the shaft 13
Is arranged at a position that avoids an increase in electric field strength on the surface of. The spacer ring 17 is made of a plastic material and is mounted in the groove 18 formed in the shaft 13. The spacer ring 17 mounted in this manner is used as the insulating tube 12.
It has elasticity to the inner peripheral surface of the shaft 13
The outer peripheral surface and the inner peripheral surface of the insulating tube 12 are kept at equal intervals. Further, when the semiconductor element 3 is replaced, the screw of the shaft 13 is loosened, and after the replacement, even if the shaft 13 is screwed, the distance between the outer peripheral surface of the shaft 13 and the inner peripheral surface of the insulating tube 12 does not change. Absent. Further, when the cooling fins 4 are replaced, the tightening members 11 are pulled out from the through holes 10 of the respective cooling fins 4, and after the replacement, the tightening members 11 are again inserted into the through holes 10, and even if tightened, the shaft 13 The distance between the outer peripheral surface of the and the inner peripheral surface of the insulating tube 12 does not change.
上記のような構成の締付部材11では第1図に示すように
シャフト13の半径をr1、絶縁管12の内周の半径をr2、絶
縁管12の外周の半径をr3、絶縁管12の誘電率をε1、お
よび空気16の誘電率をε2とすれば、電界強度が最大と
なるシャフト13の表面の電界強度Eは次式によって求め
られる。In the tightening member 11 having the above-described structure, as shown in FIG. 1 , the radius of the shaft 13 is r 1 , the radius of the inner circumference of the insulating tube 12 is r 2 , the outer radius of the insulating tube 12 is r 3 , and the insulation is Assuming that the permittivity of the tube 12 is ε 1 and the permittivity of the air 16 is ε 2 , the electric field intensity E on the surface of the shaft 13 that maximizes the electric field intensity can be obtained by the following equation.
E=V/{(1/ε1lur3/r2)+(1/ε2lur2/r1)}ε2r
1 上式において、シャフト13の外周面と絶縁管12の内周面
との間隔は常に一定であるから、最大電界強度Eが30kv
/cm近くになるようなことはなく、コロナ放電が発生す
ることもない。E = V / {(1 / ε 1 lur 3 / r 2 ) + (1 / ε 2 lur 2 / r 1 )} ε 2 r
1 In the above formula, since the distance between the outer peripheral surface of the shaft 13 and the inner peripheral surface of the insulating tube 12 is always constant, the maximum electric field strength E is 30 kv.
It will never be close to / cm and no corona discharge will occur.
第3図はシャフト13に形成された溝18に、上記のスペー
サリング17の代わりに割ピン19を装着したものである。
この場合においても、シャフト13の外周面と絶縁管12の
内周面との間を等間隔に保てることは上記の実施例と同
様である。In FIG. 3, a split pin 19 is mounted in the groove 18 formed in the shaft 13 instead of the spacer ring 17 described above.
Even in this case, the outer peripheral surface of the shaft 13 and the inner peripheral surface of the insulating tube 12 can be kept at equal intervals, as in the above-described embodiment.
なお、上記のそれぞれの実施例ではスペーサリング17お
よび割ピン19をシャフト13の溝18に装着したが、絶縁管
12の内周部に装着したものであってもよい。In each of the above embodiments, the spacer ring 17 and the split pin 19 were mounted in the groove 18 of the shaft 13, but the insulating tube
It may be attached to the inner peripheral portion of 12.
以上述べたことから本考案による半導体変換装置の締付
部材は、それぞれの冷却フィンに形成された貫通孔の内
周面に接触した状態に絶縁管を挿入し、この絶縁管内に
シャフトを挿入してシャフトの軸方向に適当な間隔をお
いて、かつシャフトの外周面と絶縁管の内周面との間の
少なくとも二箇所にスペーサを配置し、シャフトの外周
面と絶縁管の内周面との間を等間隔に保つことができる
ので、シャフトの外周面と絶縁管の内周面との間隔を常
に、かつ正確に保つことができ、また、シャフトの外周
面と絶縁管の内周面との間隔を調整する作業は不要とな
ったので組み立てが容易な半導体変換装置を実現でき
る。From the above description, the fastening member of the semiconductor conversion device according to the present invention inserts the insulating pipe in a state of being in contact with the inner peripheral surface of the through hole formed in each cooling fin, and inserting the shaft in the insulating pipe. The spacers at appropriate intervals in the axial direction of the shaft, and at least two spacers are arranged between the outer peripheral surface of the shaft and the inner peripheral surface of the insulating pipe. Since they can be kept at equal intervals, the distance between the outer peripheral surface of the shaft and the inner peripheral surface of the insulating pipe can be always and accurately maintained, and the outer peripheral surface of the shaft and the inner peripheral surface of the insulating pipe can be maintained. Since the work of adjusting the interval between and is unnecessary, it is possible to realize a semiconductor conversion device that is easy to assemble.
第1図は本考案の半導体変換装置の締付部材を示し、従
来の半導体変換装置の図面を共用した第4図の矢印A−
Aによって示した拡大断面図、第2図は第4図に矢印C
によって示す部分の拡大横断面図、第3図は第4図に矢
印Cによって示す部分の他の例を示す拡大横断面図、第
4図は半導体変換装置を示す平面図、第5図は従来の締
付部材であって、第4図に矢印B−Bによって示す拡大
断面図である。 1……半導体変換装置、2……装置本体、3……半導体
素子、4……冷却フィン、10……貫通孔、11……締付部
材、12……絶縁管、13……シャフト、17,19……スペー
サ(スペーサリング、割ピン)。FIG. 1 shows a fastening member of a semiconductor conversion device of the present invention, and an arrow A- in FIG. 4 sharing the drawing of the conventional semiconductor conversion device.
FIG. 4 is an enlarged sectional view indicated by A, and FIG. 2 is an arrow C in FIG.
FIG. 3 is an enlarged cross-sectional view of a portion shown by, FIG. 3 is an enlarged cross-sectional view showing another example of the portion shown by arrow C in FIG. 4, FIG. 4 is a plan view showing a semiconductor conversion device, and FIG. FIG. 5 is an enlarged cross-sectional view of the fastening member of FIG. 4 indicated by an arrow BB in FIG. 4. 1 ... Semiconductor conversion device, 2 ... Device body, 3 ... Semiconductor element, 4 ... Cooling fin, 10 ... Through hole, 11 ... Tightening member, 12 ... Insulation pipe, 13 ... Shaft, 17 , 19 …… Spacer (spacer ring, cotter pin).
Claims (2)
る冷却フィンとを交互に重ね合せた装置本体を形成し、
この装置本体の一端から絶縁管にシャフトを挿入した締
付部材をそれぞれの冷却フィンに形成された貫通孔を通
して前記装置本体の他端に突き出させ、前記締付部材に
よって前記装置本体を締付けてなる半導体変換装置にお
いて、前記締付部材は、それぞれの冷却フィンに形成さ
れた前記貫通孔の内周面に接触した状態で挿入された絶
縁管と、この絶縁管内に挿入されたシャフトと、このシ
ャフトの外周面と前記絶縁管の内周面との間で、かつシ
ャフトの軸方向に適当な間隔をもった少なくとも二箇所
に配置され、前記シャフトの外周面と前記絶縁管の内周
面との間を等間隔に保つスペーサとを備えてなることを
特徴とする半導体変換装置。1. A device main body is formed by alternately stacking flat semiconductor elements and cooling fins for cooling the semiconductor elements,
A fastening member having a shaft inserted into an insulating tube from one end of the device body is projected to the other end of the device body through a through hole formed in each cooling fin, and the device body is fastened by the fastening member. In the semiconductor conversion device, the fastening member includes an insulating tube inserted in a state of being in contact with an inner peripheral surface of the through hole formed in each cooling fin, a shaft inserted in the insulating tube, and the shaft. Between the outer peripheral surface of the shaft and the inner peripheral surface of the insulating pipe, and at least at two positions with an appropriate distance in the axial direction of the shaft, the outer peripheral surface of the shaft and the inner peripheral surface of the insulating pipe. A semiconductor conversion device, characterized in that it is provided with spacers that keep the spaces at equal intervals.
内周面との間で、かつシャフトの軸方向の少なくとも二
箇所の冷却フィンの貫通孔から外れた位置に配されたこ
とを特徴とする請求項1に記載の半導体変換装置。2. The spacer is arranged between the outer peripheral surface of the shaft and the inner peripheral surface of the insulating pipe and at a position separated from at least two through holes of the cooling fin in the axial direction of the shaft. The semiconductor conversion device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5989788U JPH079384Y2 (en) | 1988-05-06 | 1988-05-06 | Semiconductor conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5989788U JPH079384Y2 (en) | 1988-05-06 | 1988-05-06 | Semiconductor conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01163346U JPH01163346U (en) | 1989-11-14 |
| JPH079384Y2 true JPH079384Y2 (en) | 1995-03-06 |
Family
ID=31285633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5989788U Expired - Lifetime JPH079384Y2 (en) | 1988-05-06 | 1988-05-06 | Semiconductor conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH079384Y2 (en) |
-
1988
- 1988-05-06 JP JP5989788U patent/JPH079384Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01163346U (en) | 1989-11-14 |
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