JPH0794967B2 - トンネル顕微鏡測定回路 - Google Patents
トンネル顕微鏡測定回路Info
- Publication number
- JPH0794967B2 JPH0794967B2 JP2068511A JP6851190A JPH0794967B2 JP H0794967 B2 JPH0794967 B2 JP H0794967B2 JP 2068511 A JP2068511 A JP 2068511A JP 6851190 A JP6851190 A JP 6851190A JP H0794967 B2 JPH0794967 B2 JP H0794967B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- test probe
- tip
- distance
- tunnel current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000523 sample Substances 0.000 claims description 92
- 238000012360 testing method Methods 0.000 claims description 39
- 238000005259 measurement Methods 0.000 claims description 19
- 230000005641 tunneling Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 8
- 238000005070 sampling Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 1
- 238000009924 canning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004574 scanning tunneling microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/14—STP [Scanning Tunnelling Potentiometry]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/861—Scanning tunneling probe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/872—Positioner
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Radiology & Medical Imaging (AREA)
- General Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/327,863 US5019707A (en) | 1989-03-23 | 1989-03-23 | High speed waveform sampling with a tunneling microscope |
| US327863 | 1994-10-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02285203A JPH02285203A (ja) | 1990-11-22 |
| JPH0794967B2 true JPH0794967B2 (ja) | 1995-10-11 |
Family
ID=23278403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2068511A Expired - Lifetime JPH0794967B2 (ja) | 1989-03-23 | 1990-03-20 | トンネル顕微鏡測定回路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5019707A (de) |
| EP (1) | EP0388640B1 (de) |
| JP (1) | JPH0794967B2 (de) |
| DE (1) | DE69003565T2 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2775464B2 (ja) * | 1989-04-27 | 1998-07-16 | キヤノン株式会社 | 位置検出装置 |
| DE4324983C2 (de) * | 1993-07-26 | 1996-07-11 | Fraunhofer Ges Forschung | Akustisches Mikroskop |
| US5874668A (en) * | 1995-10-24 | 1999-02-23 | Arch Development Corporation | Atomic force microscope for biological specimens |
| KR100421375B1 (ko) * | 2001-01-15 | 2004-03-09 | 제원호 | 고속 주사탐침 현미경용 고주파 진동 탐침 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH643397A5 (de) * | 1979-09-20 | 1984-05-30 | Ibm | Raster-tunnelmikroskop. |
| DE3570012D1 (en) * | 1985-01-29 | 1989-06-08 | Ibm | Field-emission scanning auger electron microscope |
| US4665313A (en) * | 1985-06-28 | 1987-05-12 | International Business Machines Corporation | Apparatus and method for displaying hole-electron pair distributions induced by electron bombardment |
| EP0223918B1 (de) * | 1985-11-26 | 1990-10-24 | International Business Machines Corporation | Verfahren und Mikroskop zur Erzeugung von topographischen Bildern unter Anwendung atomarer Wechselwirkungskräfte mit Subauflösung |
| US4724318A (en) * | 1985-11-26 | 1988-02-09 | International Business Machines Corporation | Atomic force microscope and method for imaging surfaces with atomic resolution |
| JPS63142202A (ja) * | 1986-12-05 | 1988-06-14 | Fujitsu Ltd | 高周波トンネル顕微鏡 |
| EP0290647B1 (de) * | 1987-05-12 | 1991-07-24 | International Business Machines Corporation | Atomares Kräftemikroskop mit oscillierendem Quarz |
-
1989
- 1989-03-23 US US07/327,863 patent/US5019707A/en not_active Expired - Fee Related
-
1990
- 1990-02-19 DE DE90103155T patent/DE69003565T2/de not_active Expired - Lifetime
- 1990-02-19 EP EP90103155A patent/EP0388640B1/de not_active Expired - Lifetime
- 1990-03-20 JP JP2068511A patent/JPH0794967B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69003565T2 (de) | 1994-05-11 |
| JPH02285203A (ja) | 1990-11-22 |
| EP0388640A3 (en) | 1990-11-22 |
| EP0388640B1 (de) | 1993-09-29 |
| EP0388640A2 (de) | 1990-09-26 |
| US5019707A (en) | 1991-05-28 |
| DE69003565D1 (de) | 1993-11-04 |
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