JPH0797237A - Formation of transparent coating film reduced in refractive index - Google Patents
Formation of transparent coating film reduced in refractive indexInfo
- Publication number
- JPH0797237A JPH0797237A JP24340493A JP24340493A JPH0797237A JP H0797237 A JPH0797237 A JP H0797237A JP 24340493 A JP24340493 A JP 24340493A JP 24340493 A JP24340493 A JP 24340493A JP H0797237 A JPH0797237 A JP H0797237A
- Authority
- JP
- Japan
- Prior art keywords
- film
- refractive index
- forming solution
- compound
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title claims description 19
- 238000000576 coating method Methods 0.000 title claims description 19
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000011521 glass Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 13
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 11
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 10
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 16
- 229910052718 tin Inorganic materials 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 44
- 239000000243 solution Substances 0.000 description 22
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 239000005357 flat glass Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 5
- -1 alkoxy monosilane Chemical compound 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- CQQXCSFSYHAZOO-UHFFFAOYSA-L [acetyloxy(dioctyl)stannyl] acetate Chemical compound CCCCCCCC[Sn](OC(C)=O)(OC(C)=O)CCCCCCCC CQQXCSFSYHAZOO-UHFFFAOYSA-L 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 150000003606 tin compounds Chemical class 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- RYSXWUYLAWPLES-MTOQALJVSA-N (Z)-4-hydroxypent-3-en-2-one titanium Chemical compound [Ti].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O RYSXWUYLAWPLES-MTOQALJVSA-N 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003755 zirconium compounds Chemical class 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、熱分解を利用したガラ
ス板面上への酸化物被膜形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an oxide film on a glass plate surface by utilizing thermal decomposition.
【0002】[0002]
【従来の技術】建築用車両用として用いられる板ガラス
は、反射防止や日射流入制御等の機能的側面および可視
域の反射率や反射スペクトル調整による美観的側面が重
視され、これらがその商品価値に多大な影響を及ぼすた
め、従来から、板ガラス表面に各種の屈折率を有する薄
膜を形成することにより、ガラスの光学的特性を調整す
ることが行われている。ミラー状の外観を有し、内部空
間への日射流入を制限する熱線反射ガラスはその代表的
なものである。2. Description of the Related Art In flat glass used for construction vehicles, functional aspects such as antireflection and solar radiation inflow control and aesthetic aspects by adjusting the reflectance and reflection spectrum in the visible range are emphasized. Since it has a great influence, the optical characteristics of glass have been conventionally adjusted by forming thin films having various refractive indexes on the surface of the plate glass. A typical example is heat-reflecting glass that has a mirror-like appearance and restricts the inflow of solar radiation into the internal space.
【0003】また、最近では、ガラスの透明性を生かし
た建築物が見直されてきたこと、自動車のフロントガラ
スにおいては、安全のため、一定値以上の可視光線透過
率が必要とされていること等から、従来よりも、基板と
なるガラスの屈折率により近い屈折率を有する薄膜に対
する要求も広がりつつある。Further, recently, a building utilizing the transparency of glass has been reviewed, and a windshield of an automobile is required to have a visible light transmittance of a certain value or more for safety. Therefore, the demand for a thin film having a refractive index closer to that of the glass serving as the substrate is expanding more than ever before.
【0004】一方、ガラス基板への薄膜形成方法には、
スパッタリング法、CVD法、ゾルゲル法等の方法があ
るが、最も低コストで、大量かつ大面積のガラスに薄膜
を形成できる方法は、ガラス製造ライン上において成形
されたガラス板面上に被膜形成溶液を噴霧するスプレー
法等により被膜形成溶液を熱分解する方法である。On the other hand, the method for forming a thin film on a glass substrate is
Although there are methods such as a sputtering method, a CVD method, and a sol-gel method, the method that can form a thin film on a large amount of a large amount of glass at the lowest cost is a film forming solution on a glass plate surface formed on a glass manufacturing line. Is a method of thermally decomposing the film-forming solution by a spray method or the like.
【0005】この方法により形成され、また、ガラス基
板として多用されるソーダライムシリケートガラスの屈
折率である1.5に比較的近い屈折率を有する薄膜とし
ては、珪素化合物とチタン化合物を有機溶剤に溶解させ
た被膜形成溶液をライン上の板ガラスに噴霧することに
より形成される酸化珪素を含む酸化チタン薄膜がある
(特公昭56−18547)。As a thin film formed by this method and having a refractive index relatively close to 1.5 which is a refractive index of soda lime silicate glass which is often used as a glass substrate, a silicon compound and a titanium compound are used as an organic solvent. There is a titanium oxide thin film containing silicon oxide formed by spraying a dissolved film forming solution on a plate glass on a line (Japanese Patent Publication No. 56-18547).
【0006】[0006]
【発明が解決しようとする課題】しかしながら、上記発
明により形成された酸化珪素を含む酸化チタン薄膜は、
その屈折率をソーダライムシリケートガラスの屈折率に
十分近づけることができない。However, the titanium oxide thin film containing silicon oxide formed by the above-mentioned invention is
The refractive index cannot be brought close enough to that of soda lime silicate glass.
【0007】また、本発明者が試みたところによると、
被膜形成溶液の熱分解による被膜形成方法では、屈折率
を低下させるために、酸化珪素のみからなる被膜を形成
すべく有機珪素化合物のみを被膜形成溶液中に含有させ
ても、被膜はまったく形成されないか、または白い粒子
状となり、商品として好ましいものは得られなかった。
これは、ガラス表面での有機珪素化合物の反応性が低
く、均一な膜にならないためである。[0007] Further, according to what the inventor has tried,
In the film forming method by thermal decomposition of the film forming solution, even if an organic silicon compound alone is contained in the film forming solution to form a film consisting of only silicon oxide, the film is not formed in order to reduce the refractive index. Or, it was in the form of white particles, and no preferable product was obtained.
This is because the reactivity of the organosilicon compound on the glass surface is low and a uniform film cannot be formed.
【0008】本発明は、かかる事情に鑑み、ソーダライ
ムシリケートガラスの屈折率にさらに近い屈折率1.7
程度以下の薄膜を、被膜形成溶液を熱分解することによ
り形成する方法を提供することを目的とする。In view of such circumstances, the present invention has a refractive index of 1.7 which is closer to that of soda lime silicate glass.
It is an object of the present invention to provide a method for forming a thin film having a thickness of not more than a certain degree by thermally decomposing a film forming solution.
【0009】[0009]
【課題を解決するための手段】本発明の上記目的は、以
下の構成により達成される。The above object of the present invention can be achieved by the following constitutions.
【0010】本発明は、有機金属化合物と有機珪素化合
物を含む被膜形成溶液を前記被膜形成溶液の熱分解温度
以上に加熱したガラス板面上に供給して酸化物被膜を形
成する方法であって、前記有機金属化合物は有機ジルコ
ニウム化合物であり、かつ、前記被膜形成溶液における
ジルコニウムに対する珪素のモル比が3〜60であるこ
とを特徴とする酸化ジルコニウム含有酸化珪素被膜の形
成方法である。The present invention is a method for forming an oxide film by supplying a film-forming solution containing an organometallic compound and an organosilicon compound onto a glass plate surface heated above the thermal decomposition temperature of the film-forming solution. The organometallic compound is an organozirconium compound, and the molar ratio of silicon to zirconium in the film-forming solution is 3 to 60, which is a method for forming a zirconium oxide-containing silicon oxide film.
【0011】本発明の第2は、有機金属化合物と有機珪
素化合物を含む被膜形成溶液を前記被膜形成溶液の熱分
解温度以上に加熱したガラス板面上に供給して酸化物被
膜を形成する方法であって、前記有機金属化合物は有機
錫化合物であり、かつ、前記被膜形成溶液における錫に
対する珪素のモル比が3〜24であることを特徴とする
酸化錫含有酸化珪素被膜の形成方法である。The second aspect of the present invention is to form an oxide film by supplying a film-forming solution containing an organometallic compound and an organosilicon compound onto a glass plate surface heated above the thermal decomposition temperature of the film-forming solution. Wherein the organometallic compound is an organotin compound, and the molar ratio of silicon to tin in the coating film forming solution is 3 to 24. .
【0012】ここで、ガラス表面の温度については通常
450℃〜650℃であることが望ましい。650℃以
上であれば、ガラス表面に凹凸が生じ外観上商品として
好ましくなく、450℃以下であれば、膜性能が低下す
るためである。Here, it is desirable that the temperature of the glass surface is usually 450 ° C. to 650 ° C. This is because if the temperature is 650 ° C. or higher, the glass surface becomes uneven, which is not desirable as a product in appearance, and if it is 450 ° C. or lower, the film performance deteriorates.
【0013】このような温度条件と薄膜形成の生産性を
考慮すれば、フロート法に代表される板ガラス製造工程
中のガラスリボンに、少なくとも一つのスプレーガンを
用いて前記被膜形成溶液を噴霧するスプレー法が望まし
い。Considering such temperature conditions and productivity of thin film formation, a spray for spraying the film forming solution onto a glass ribbon in a plate glass manufacturing process represented by a float method by using at least one spray gun. Law is desirable.
【0014】この際のジルコニウム、錫の化合物として
は、アセチルアセトナート、アセテート等の金属キレー
ト化合物、または塩化物等の無機化合物等が使用でき
る。As the zirconium and tin compounds at this time, metal chelate compounds such as acetylacetonate and acetate, and inorganic compounds such as chlorides can be used.
【0015】一方、有機珪素化合物としては、テトラメ
トキシシラン(以下「TMOS」という)、テトラエト
キシシラン(以下「TEOS」という)、テトラプロポ
キシシラン、ジメチルエトキシシラン等で例示されるア
ルコキシ基を1個から4個有するアルコキシモノシラ
ン、アルコキシジシラン、アルコキシトリシラン、アル
コキシテトラシラン等のアルコキシシラン、またはアル
コキシシランの水素の一部をビニル基に置き換える等に
よって得られるアルコキシシラン誘導体等が使用でき
る。On the other hand, as the organosilicon compound, one alkoxy group exemplified by tetramethoxysilane (hereinafter referred to as "TMOS"), tetraethoxysilane (hereinafter referred to as "TEOS"), tetrapropoxysilane, dimethylethoxysilane, etc. 4 alkoxy alkoxysilanes such as alkoxy monosilane, alkoxy disilane, alkoxy trisilane, and alkoxy tetrasilane, or an alkoxysilane derivative obtained by substituting a part of hydrogen of the alkoxysilane with a vinyl group can be used.
【0016】また、有機溶剤としては、メタノール、エ
タノール等のアルコール類、ギ酸、酢酸等のカルボン酸
およびそのエステル化化合物、キシレン、トルエン等の
芳香族炭化水素またはアミン類等が用いられる。As the organic solvent, alcohols such as methanol and ethanol, carboxylic acids such as formic acid and acetic acid and esterified compounds thereof, aromatic hydrocarbons such as xylene and toluene, or amines are used.
【0017】被膜形成溶液の組成は、形成する被膜の要
求特性によって決定される。ジルコニウム、錫の化合物
濃度は被膜形成速度に大きな影響を及ぼすため、化合物
の有機溶剤に対する溶解度と目的とする被膜の膜厚から
決定される。一方、有機珪素化合物の濃度は被膜の屈折
率に大きな影響を及ぼすため、要求される被膜の屈折率
から決定される。The composition of the film-forming solution is determined by the required characteristics of the film to be formed. Since the compound concentration of zirconium and tin has a great influence on the film forming rate, it is determined from the solubility of the compound in an organic solvent and the desired film thickness of the film. On the other hand, since the concentration of the organosilicon compound has a great influence on the refractive index of the coating, it is determined from the required refractive index of the coating.
【0018】被膜の屈折率は、被膜形成溶液中における
ジルコニウムまたは錫に対する珪素の比率が大きいほど
低くなるが、この比率が一定値を越えると透明性・均一
性の点で良好な薄膜が得られないため、この比率は一定
の範囲内にする必要がある。The higher the ratio of silicon to zirconium or tin in the film-forming solution, the lower the refractive index of the film, but if this ratio exceeds a certain value, a thin film excellent in transparency and uniformity can be obtained. Therefore, this ratio must be within a certain range.
【0019】この比率の範囲は、用いる有機金属化合物
により異なるが、ジルコニウムについては3〜60、錫
については3〜24であれば、ソーダライムシリケート
ガラスの屈折率に近い1.7程度以下の屈折率を有する
透明・均一な薄膜を得ることができる。The range of this ratio varies depending on the organometallic compound used, but if zirconium is 3 to 60 and tin is 3 to 24, the refractive index is about 1.7 or less, which is close to the refractive index of soda lime silicate glass. It is possible to obtain a transparent and uniform thin film having a high rate.
【0020】この範囲は使用する有機珪素化合物によっ
ても変化する。例えば、TMOSよりもTEOSを用い
るときのほうが、上記比率の上限を高くすることが可能
である。但し、形成される被膜の屈折率は使用する有機
珪素化合物によって変化するため、屈折率は上記比率に
よって一義的に定まらない。例えば、有機珪素化合物と
してTMOSを用いるときのほうがTEOSを用いると
きよりも被膜の屈折率は低くなる。This range also changes depending on the organosilicon compound used. For example, when TEOS is used rather than TMOS, the upper limit of the above ratio can be increased. However, since the refractive index of the formed film changes depending on the organic silicon compound used, the refractive index is not uniquely determined by the above ratio. For example, when TMOS is used as the organosilicon compound, the refractive index of the film is lower than when TEOS is used.
【0021】[0021]
【作用】本発明によれば、有機珪素化合物と有機ジルコ
ニウム化合物または有機錫化合物がガラス上で熱分解
し、珪素およびジルコニウムまたは錫を含有する酸化物
被膜を形成し、透明性・均一性を有する低屈折率被膜が
形成される。According to the present invention, the organic silicon compound and the organic zirconium compound or the organic tin compound are thermally decomposed on the glass to form an oxide film containing silicon and zirconium or tin, and have transparency and uniformity. A low refractive index coating is formed.
【0022】また、ジルコニウムまたは錫に対する珪素
の比率を透明性等が失われない一定の範囲で調整するこ
とにより、被膜の屈折率を調整し得る。Further, the refractive index of the coating film can be adjusted by adjusting the ratio of silicon to zirconium or tin within a certain range in which transparency and the like are not lost.
【0023】[0023]
【実施例】以下に図面に基づき実施例によって本発明を
より具体的に説明するが、本発明は以下の実施例に限定
されるものではない。EXAMPLES The present invention will be described in more detail with reference to the following examples based on the drawings, but the present invention is not limited to the following examples.
【0024】(実施例1)フロート法ガラス製造装置の
フロートバス出口と徐冷炉の間において、搬送ロール5
上を分速12.7mでライン上を移動する板ガラス1の
上面にこの板ガラス1の移動方向とほぼ直角方向に往復
運動する霧化装置3からジオクチル錫ジアセテートとT
EOSを含むトルエン溶液を空気圧4kg/cm2 、液
量1000ml/minで吹き付けて板ガラス1上に被
膜を形成した。被膜形成中には、ライン上における霧化
装置3の前後設置した排気装置4により排気を行った。
また、板ガラス1の表面温度は600℃であった。(Embodiment 1) The transfer roll 5 is provided between the float bath outlet of the float glass manufacturing apparatus and the annealing furnace.
On the upper surface of the glass sheet 1 moving on the line at a speed of 12.7 m / min.
A toluene solution containing EOS was sprayed at an air pressure of 4 kg / cm 2 and a liquid amount of 1000 ml / min to form a film on the plate glass 1. During film formation, exhaust was performed by the exhaust device 4 installed before and after the atomizing device 3 on the line.
The surface temperature of the plate glass 1 was 600 ° C.
【0025】また、被膜形成溶液中の錫に対する珪素の
モル比を変化させて被膜形成を実施し、得られた被膜の
屈折率は、632.8nmの波長を有するレーザーを用
いたエリプソメトリー装置を用いて測定した。得られた
被膜の屈折率を表1に示す。Further, the film formation was carried out by changing the molar ratio of silicon to tin in the film forming solution, and the refractive index of the obtained film was measured by an ellipsometry apparatus using a laser having a wavelength of 632.8 nm. It was measured using. Table 1 shows the refractive index of the obtained coating.
【0026】[0026]
【表1】 [Table 1]
【0027】(実施例2)実施例1のジオクチル錫ジア
セテートに代えてジルコニウムアセチルアセトナートを
用い、その他については実施例1と同条件で被膜を形成
した。このときにも、被膜形成溶液中のジルコニウムに
対する珪素のモル比を変化させて被膜形成を実施した
が、このモル比が60を越えると均一な薄膜が得られな
かった。得られた被膜の屈折率は実施例1と同様の方法
で測定した。結果を表1に示す。Example 2 A film was formed under the same conditions as in Example 1 except that zirconium acetylacetonate was used in place of the dioctyltin diacetate of Example 1. Also at this time, the film formation was carried out by changing the molar ratio of silicon to zirconium in the film forming solution, but if this molar ratio exceeded 60, a uniform thin film could not be obtained. The refractive index of the obtained coating was measured by the same method as in Example 1. The results are shown in Table 1.
【0028】さらに、本発明による被膜が実用上十分な
耐久性を有することを確認するため、本実施例による酸
化珪素含有酸化ジルコニウム被膜については、耐摩耗性
試験、耐酸性試験及び耐アルカリ性試験を実施した。Further, in order to confirm that the coating film of the present invention has practically sufficient durability, the silicon oxide-containing zirconium oxide coating film of this example was subjected to an abrasion resistance test, an acid resistance test and an alkali resistance test. Carried out.
【0029】耐摩耗性試験は、テーバー試験(摩擦輪C
S−10F、加重500g、1000回転)により実施
し、試験前後のヘイズ率の差を測定した。The abrasion resistance test is performed by the Taber test (friction ring C
S-10F, weight 500g, 1000 rotations), and the difference in haze ratio before and after the test was measured.
【0030】また、耐酸性試験は、5Nの硫酸水溶液中
に23℃で6時間浸漬することのより実施し、試験前後
の可視光反射率の差を測定した。The acid resistance test was carried out by immersing the sample in a 5N sulfuric acid aqueous solution at 23 ° C. for 6 hours, and the difference in visible light reflectance before and after the test was measured.
【0031】また、耐アルカリ性試験は、5Nの水酸化
カリウム水溶液中に23℃で6時間浸漬することにより
実施し、試験前後の可視光反射率の差を測定した。The alkali resistance test was carried out by immersing the solution in 5N potassium hydroxide aqueous solution at 23 ° C. for 6 hours, and the difference in visible light reflectance before and after the test was measured.
【0032】これらの結果を表2に示す。The results are shown in Table 2.
【0033】[0033]
【表2】 [Table 2]
【0034】(実施例3)実施例1のジオクチル錫ジア
セテートに代えてジルコニウムアセチルアセトナートを
用い、TEOSに代えてTMOSを用い、その他につい
ては実施例1と同条件で被膜を形成した。このとき、ジ
ルコニウムに対する珪素のモル比を変化させて、被膜形
成を実施したが、このモル比が22を越えると均一な薄
膜が得られなかった。Example 3 A film was formed under the same conditions as in Example 1 except that zirconium acetylacetonate was used in place of dioctyltin diacetate in Example 1 and TMOS was used in place of TEOS. At this time, a film was formed by changing the molar ratio of silicon to zirconium, but when this molar ratio exceeded 22, a uniform thin film could not be obtained.
【0035】得られた被膜の屈折率を実施例1と同様の
方法で測定した。結果を表3に示す。The refractive index of the obtained coating was measured by the same method as in Example 1. The results are shown in Table 3.
【0036】[0036]
【表3】 [Table 3]
【0037】実施例2の結果との対比より、有機珪素化
合物としてTEOSを用いたときよりもTMOSを用い
たときのほうが、被膜形成溶液中のジルコニウムに対す
る珪素の比率を高くすることはできないが、結果として
低屈折率の薄膜を形成できることがわかる。From the comparison with the results of Example 2, the ratio of silicon to zirconium in the film forming solution cannot be increased when TMOS is used as compared with when TEOS is used as the organic silicon compound. As a result, it can be seen that a thin film having a low refractive index can be formed.
【0038】これは、TMOSのほうがTEOSよりも
反応性が高いため、膜中にSi元素が多く取り込まれて
屈折率が低くなるためであると推測される。It is presumed that this is because TMOS has higher reactivity than TEOS, and a large amount of Si element is incorporated into the film to lower the refractive index.
【0039】(比較例1)本発明との比較のために、チ
タンを含む被膜の形成を試験的に行った。Comparative Example 1 For the purpose of comparison with the present invention, a film containing titanium was formed on a trial basis.
【0040】実施例1のジオクチル錫ジアセテートに代
えてチタニウムアセチルアセトナートを用い、その他に
ついては実施例1と同条件で被膜を形成した。Titanium acetylacetonate was used in place of the dioctyltin diacetate of Example 1, and the coating was formed under the same conditions as in Example 1 except for the above.
【0041】得られた被膜の屈折率も実施例1と同様の
方法で測定した。結果を表3に示す。The refractive index of the obtained coating was also measured by the same method as in Example 1. The results are shown in Table 3.
【0042】[0042]
【発明の効果】本発明によれば、屈折率1.55から
1.71の被膜を多量かつ大面積のガラスの表面に熱分
解を利用して形成できる。According to the present invention, a film having a refractive index of 1.55 to 1.71 can be formed on the surface of a large amount of glass having a large area by utilizing thermal decomposition.
【0043】また、屈折率は、上記範囲内で被膜形成溶
液の調整により容易に行い得る。The refractive index can be easily adjusted by adjusting the film forming solution within the above range.
【0044】本発明により被膜を形成したガラスは、建
築用等に利用可能であるが、被膜中の酸化珪素の含有量
が高いため、酸化珪素被膜を形成して使用される種々の
用途にも利用が可能である。酸化珪素のみの被膜は、ス
プレー法等熱分解による製造が困難であることに対し、
本発明による被膜形成ガラスは、スプレー法等熱分解に
よっても製造可能だからである。The glass coated with the present invention can be used for construction, etc., but since the content of silicon oxide in the coating is high, it can be used in various applications where a silicon oxide coating is formed. It is available. While it is difficult to produce a film made only of silicon oxide by thermal decomposition such as spraying,
This is because the coated glass according to the present invention can be produced by thermal decomposition such as spraying.
【図1】本発明を実施するための製造装置の模式図FIG. 1 is a schematic diagram of a manufacturing apparatus for carrying out the present invention.
1;板ガラス、2;被膜形成溶液、3;霧化装置 4;排気装置、5;搬送ロール 1; Sheet glass, 2; Film forming solution, 3; Atomizing device, 4; Exhaust device, 5; Conveying roll
Claims (3)
被膜形成溶液を前記被膜形成溶液の熱分解温度以上に加
熱したガラス板面上に供給して酸化物被膜を形成する方
法であって、前記有機金属化合物は有機ジルコニウム化
合物であり、かつ、前記被膜形成溶液におけるジルコニ
ウムに対する珪素のモル比が3〜60であることを特徴
とする酸化ジルコニウム含有酸化珪素被膜の形成方法。1. A method for forming an oxide film by supplying a film-forming solution containing an organometallic compound and an organosilicon compound onto a glass plate surface heated above the thermal decomposition temperature of the film-forming solution, said method comprising: The method for forming a zirconium oxide-containing silicon oxide coating film, wherein the organometallic compound is an organozirconium compound, and the molar ratio of silicon to zirconium in the coating film forming solution is 3 to 60.
ランであり、かつ、前記被膜形成溶液におけるジルコニ
ウムに対する珪素のモル比が3〜22であることを特徴
とする請求項1記載の被膜形成方法。2. The film forming method according to claim 1, wherein the organosilicon compound is tetramethoxysilane, and the molar ratio of silicon to zirconium in the film forming solution is 3 to 22.
被膜形成溶液を前記被膜形成溶液の熱分解温度以上に加
熱したガラス板面上に供給して酸化物被膜を形成する方
法であって、前記有機金属化合物は有機錫化合物であ
り、かつ、前記被膜形成溶液における錫に対する珪素の
モル比が3〜24であることを特徴とする酸化錫含有酸
化珪素被膜の形成方法。3. A method for forming an oxide film by supplying a film-forming solution containing an organometallic compound and an organosilicon compound onto a glass plate surface heated above the thermal decomposition temperature of the film-forming solution, the method comprising the steps of: The method for forming a tin oxide-containing silicon oxide coating film, wherein the organometallic compound is an organotin compound, and the molar ratio of silicon to tin in the coating film forming solution is 3 to 24.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24340493A JP3475460B2 (en) | 1993-09-30 | 1993-09-30 | Method of forming transparent coating with reduced refractive index |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24340493A JP3475460B2 (en) | 1993-09-30 | 1993-09-30 | Method of forming transparent coating with reduced refractive index |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0797237A true JPH0797237A (en) | 1995-04-11 |
| JP3475460B2 JP3475460B2 (en) | 2003-12-08 |
Family
ID=17103361
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24340493A Expired - Fee Related JP3475460B2 (en) | 1993-09-30 | 1993-09-30 | Method of forming transparent coating with reduced refractive index |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3475460B2 (en) |
Cited By (5)
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|---|---|---|---|---|
| WO2010067850A1 (en) | 2008-12-12 | 2010-06-17 | 旭硝子株式会社 | Method for producing glass substrate having silicon oxide film attached thereto |
| WO2011155545A1 (en) * | 2010-06-11 | 2011-12-15 | 旭硝子株式会社 | Method for producing glass substrate provided with inorganic-microparticle-containing silicon oxide film |
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| WO2015001979A1 (en) * | 2013-07-05 | 2015-01-08 | 旭硝子株式会社 | Method for producing substrate with coating film |
| WO2015046260A1 (en) * | 2013-09-30 | 2015-04-02 | 旭硝子株式会社 | Method for manufacturing substrate having porous film attached thereto |
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1993
- 1993-09-30 JP JP24340493A patent/JP3475460B2/en not_active Expired - Fee Related
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| WO2010067850A1 (en) | 2008-12-12 | 2010-06-17 | 旭硝子株式会社 | Method for producing glass substrate having silicon oxide film attached thereto |
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| WO2011155545A1 (en) * | 2010-06-11 | 2011-12-15 | 旭硝子株式会社 | Method for producing glass substrate provided with inorganic-microparticle-containing silicon oxide film |
| WO2011155543A1 (en) | 2010-06-11 | 2011-12-15 | 旭硝子株式会社 | Method for producing glass substrate with aluminum oxide-containing silicon oxide film |
| CN102933518A (en) * | 2010-06-11 | 2013-02-13 | 旭硝子株式会社 | Method for producing glass substrate provided with inorganic-microparticle-containing silicon oxide film |
| JPWO2011155543A1 (en) * | 2010-06-11 | 2013-08-01 | 旭硝子株式会社 | Method for producing glass substrate with aluminum oxide-containing silicon oxide film |
| JPWO2011155545A1 (en) * | 2010-06-11 | 2013-08-01 | 旭硝子株式会社 | Method for producing glass substrate with silicon oxide film containing inorganic fine particles |
| EP2581352A4 (en) * | 2010-06-11 | 2014-12-10 | Asahi Glass Co Ltd | PROCESS FOR PRODUCING GLASS SUBSTRATE WITH SILICON OXIDE FILM CONTAINING INORGANIC MICROPARTICLES |
| US8973403B2 (en) | 2010-06-11 | 2015-03-10 | Asahi Glass Company, Limited | Process for producing glass substrate provided with aluminum oxide-containing silicon oxide film |
| US8978416B2 (en) | 2010-06-11 | 2015-03-17 | Asahi Glass Company, Limited | Process for producing glass substrate provided with inorganic fine particle-containing silicon oxide film |
| WO2015001979A1 (en) * | 2013-07-05 | 2015-01-08 | 旭硝子株式会社 | Method for producing substrate with coating film |
| WO2015046260A1 (en) * | 2013-09-30 | 2015-04-02 | 旭硝子株式会社 | Method for manufacturing substrate having porous film attached thereto |
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| Publication number | Publication date |
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| JP3475460B2 (en) | 2003-12-08 |
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