JPH0798667B2 - Method for producing synthetic quartz glass - Google Patents

Method for producing synthetic quartz glass

Info

Publication number
JPH0798667B2
JPH0798667B2 JP27192390A JP27192390A JPH0798667B2 JP H0798667 B2 JPH0798667 B2 JP H0798667B2 JP 27192390 A JP27192390 A JP 27192390A JP 27192390 A JP27192390 A JP 27192390A JP H0798667 B2 JPH0798667 B2 JP H0798667B2
Authority
JP
Japan
Prior art keywords
quartz glass
synthetic quartz
less
bubbles
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27192390A
Other languages
Japanese (ja)
Other versions
JPH04149036A (en
Inventor
政俊 滝田
和雄 代田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP27192390A priority Critical patent/JPH0798667B2/en
Publication of JPH04149036A publication Critical patent/JPH04149036A/en
Publication of JPH0798667B2 publication Critical patent/JPH0798667B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • C03B19/066Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Melting And Manufacturing (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は合成石英ガラスの製造方法、特には高純度、高
粘性であり、泡がなく、脈理も少ないことから、TFT基
板などの耐熱基板、半導体治具母材として有用される合
成石英ガラスの製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a method for producing synthetic quartz glass, particularly high purity, high viscosity, no bubbles, and less stria The present invention relates to a method for producing synthetic quartz glass useful as a substrate and a base material for a semiconductor jig.

(従来の技術) 合成石英ガラスの製造については高純度品が得られると
いうことからコロイダルシリカ粉を焼結するという方法
が従来から種々試みられており、これにはエチルシリケ
ートの加水分解で作ったシリカ粉にバインダーを添加し
て湿式ラバープレスで成形体としたのち、ハロゲンを含
んだ雰囲気下に1,300〜1,800℃で処理して石英ガラスを
製造する方法(特開昭50−9609号公報参照)、また最近
ではアルコキシシランから乾燥シリカゲルを作り、1,00
0〜1,300℃で熱処理したのち、湿式粉砕し、乾燥後1,00
0〜1,300℃で、さらに真空中1,600℃以上で焼結して石
英ガラスを製造する方法(特開平2−34258号、特開平
2−133329号公報参照)が提案されている。
(Prior Art) For the production of synthetic quartz glass, various methods have been conventionally tried by sintering colloidal silica powder because a high-purity product can be obtained, and it was produced by hydrolysis of ethyl silicate. A method of producing quartz glass by adding a binder to silica powder to form a molded product by a wet rubber press, and then treating at 1,300 to 1,800 ° C. in an atmosphere containing halogen (see Japanese Patent Laid-Open No. 50-9609). , And recently made dry silica gel from alkoxysilane,
After heat treatment at 0 to 1,300 ℃, wet pulverize and dry after 1.00
There has been proposed a method for producing quartz glass by sintering at 0 to 1,300 ° C. and further at 1,600 ° C. or higher in a vacuum (see JP-A-2-34258 and JP-A-2-133329).

(発明が解決しようとする課題) しかし、この特開昭50−9609号公報に開示されている方
法ではバインダー添加によって得られる石英ガラスの純
度が低下するし、ハロゲン雰囲気下での焼成にはコスト
高になるという不利があり、特開平2−34528号、特開
平2−13329号公報に開示されている方法には湿式粉砕
時にシリカが汚染されるという不利があるために全工程
を不純物汚染のない工程とすることが難しいという欠点
がある。
(Problems to be Solved by the Invention) However, in the method disclosed in Japanese Patent Laid-Open No. 50-9609, the purity of quartz glass obtained by adding a binder is lowered, and the cost for firing in a halogen atmosphere is low. However, the method disclosed in JP-A-2-34528 and JP-A-2-13329 has a disadvantage that silica is contaminated during wet milling. There is a drawback that it is difficult to make a process without it.

(課題を解決するための手段) 本発明はこのような不利、欠点を解決した合成石英ガラ
スの製造方法に関するものであり、これはゾル−ゲル法
で調製されたコロイダルシリカを酸化性雰囲気において
1,200℃以下で焼成してから80メッシュ以下に篩別し、
ついでカーボンルツボに充填し、上部から重しをかけて
減圧下1,700以下で熱処理したのち、同一炉内で常圧下
または加圧下に1,700以上で熱処理することを特徴とす
るものである。
(Means for Solving the Problems) The present invention relates to a method for producing synthetic quartz glass which solves the above disadvantages and drawbacks, and it relates colloidal silica prepared by a sol-gel method in an oxidizing atmosphere.
After firing at 1,200 ℃ or less, sieve to 80 mesh or less,
Next, it is characterized in that the carbon crucible is filled, weighted from above and heat-treated under reduced pressure at 1,700 or less, and then heat-treated at 1,700 or more under normal pressure or pressure in the same furnace.

すなわち、本発明者らは高純度、高粘性で泡がなく、脈
理も少ない合成石英ガラスを製造する方法について種々
検討した結果、ゾル−ゲル法で得られたコロイダルシリ
カを酸化性雰囲気において1,200℃以下で焼成すれば有
機物を効果的に除去することができるし、これを80メッ
シュ以下に粉砕すれば粒子間の隙間があきすぎることも
なくなり、カーボンルツボ中で焼成すれば泡の発生なし
にカサ比重を上げることができ、これを1,700℃以上で
焼成すれば目的とする物性をもつ合成石英ガラスを容易
に得ることができるということを見出し、これらの諸条
件についての研究を進めて本発明を完成させた。
That is, the present inventors have various studies on a method for producing a synthetic quartz glass having high purity, high viscosity, no bubbles, and less striae, and the colloidal silica obtained by the sol-gel method in an oxidizing atmosphere at 1,200 Organic matter can be effectively removed by baking at ℃ or less, and if this is crushed to 80 mesh or less, gaps between particles will not be too open, and baking in a carbon crucible will not generate bubbles. It was found that it is possible to increase the bulk specific gravity, and it is possible to easily obtain a synthetic quartz glass having the desired physical properties by firing it at 1,700 ° C. or higher, and the present inventors proceeded with research on these various conditions and proceeded with the present invention. Was completed.

以下にこれをさらに詳述する。This will be described in more detail below.

(作用) 本発明はゾル−ゲル法による合成石英ガラス製造方法の
改良に関するものである。
(Operation) The present invention relates to an improvement in a synthetic quartz glass manufacturing method by a sol-gel method.

合成石英ガラスの製造については、メチルシリケート、
エチルシリケートなどを酸性またはアルカリ性下で加水
分解してシリカゾルを作り、これを乾燥してシリカゲル
とし、ついで高温焼成して合成石英ガラスとする方法が
知られており、これはゾル−ゲル法と呼称されている。
For the production of synthetic quartz glass, methyl silicate,
A method is known in which ethyl silicate or the like is hydrolyzed under acidic or alkaline conditions to form silica sol, which is dried to give silica gel, and then calcined at high temperature to give synthetic quartz glass, which is called the sol-gel method. Has been done.

本発明において始発材とされるコロイダルシリカもこの
公知のゾル−ゲル法で調製されたものとされるが、これ
は例えばメチルシリケート、エチルシリケートをアルコ
ール溶剤の存在下にアンモニア水で加水分解して得られ
るもの、またはメチルシリケートをアンモニア水で連続
加水分解して得られたもので、粒径が200〜1,000nm程度
のものとすることがよい。
Colloidal silica used as the starting material in the present invention is also prepared by this known sol-gel method, for example, methyl silicate, ethyl silicate is hydrolyzed with aqueous ammonia in the presence of an alcohol solvent. The obtained product, or the product obtained by continuously hydrolyzing methyl silicate with aqueous ammonia, preferably has a particle size of about 200 to 1,000 nm.

本発明ではこのコロイダルシリカをまず酸化雰囲気下に
おいて1,200℃以下の温度で焼成するのであるが、これ
によればメチルシリケート、エチルシリケートなどに起
因する有機物が完全に、かつ効果的に除去される。しか
し、この焼成は800℃以下では有機物を完全に除去する
ことができず、1,200℃以上とすると粒子の閉孔化が進
んで粒子の中に気泡ができ易くなるので、これは80〜1,
200℃の範囲、特には1,000℃±100℃の範囲とすること
がよい。
In the present invention, this colloidal silica is first fired at a temperature of 1,200 ° C. or lower in an oxidizing atmosphere. According to this, organic substances derived from methyl silicate, ethyl silicate, etc. are completely and effectively removed. However, this calcination cannot completely remove the organic matter at 800 ° C or lower, and if it is 1,200 ° C or higher, the pores of the particles are promoted and bubbles are easily formed in the particles.
It is preferable that the temperature range is 200 ° C, particularly 1,000 ° C ± 100 ° C.

このように焼成されたコロイダルシリカはついで篩別さ
れるのであるが、前記したゾル−ゲル法で調製され、上
記した焼成工程で処理されたシリカ粉は通常平均粒子径
が80〜100μmの微細粉として得られるので特に粉砕す
る必要はない。しかし、これが80メッシュ以上であると
粒子と粒子との間に隙間があきすぎて、次工程以下の焼
成時に泡が発生するようになるので、これは篩別して80
メッシュ以下のものとすることが必要とされるが、これ
は好ましくは150メッシュ以下、さらに好ましくは200メ
ッシュ以下とすることがよい。
The colloidal silica thus calcined is then sieved, but the silica powder prepared by the above-mentioned sol-gel method and treated in the above-mentioned calcining step is usually a fine powder having an average particle size of 80 to 100 μm. Therefore, it is not necessary to pulverize it. However, if this is 80 mesh or more, there is too much space between the particles, and bubbles will be generated at the time of firing in the next step or less, so this is sieved to 80
The mesh size is required to be not more than 150 mesh, which is preferably not more than 150 mesh, more preferably not more than 200 mesh.

この篩別されたシリカ粉はついで焼成して合成石英ガラ
スとされるのであるが、この焼成は目的とする合成石英
ガラスを高純度品とするということからカーボンルツボ
中で行なわれる。このカーボンルツボとしては真空焼成
中にカーボン型からガスが発生するとカーボン型に接し
ているシリカ粉に泡が発生するおそれがあることから、
高温下でハロゲン処理したもの、あるいは高温下で減圧
処理したものとすることがよい。
The sieved silica powder is then fired to obtain synthetic quartz glass. This firing is carried out in a carbon crucible because the desired synthetic quartz glass is made into a high-purity product. As this carbon crucible, when gas is generated from the carbon mold during vacuum firing, bubbles may be generated in the silica powder in contact with the carbon mold,
It is preferable that the halogen treatment is performed at a high temperature or the pressure reduction treatment is performed at a high temperature.

このカーボンルツボ中でのシリカ粉の焼成は本発明では
二段階で行なわれる。この第1段階はカーボンルツボに
上記で得たシリカ粉を充填したのち、これに重しをか
け、減圧下に1,700℃以下の温度で熱処理するものであ
るが、この重しはシリカ粉のカサ比重が0.6以下である
と焼成時に泡ができ易いということから、このカサ比重
を0.6以上のものとするためのものであり、これは重さ
が7.5g/m2以上のものとする必要があるが、これは高
温、真空雰囲気で不変であり、また安価で加工し易いと
いうことからカーボン質のものとすることがよく、さら
に重いものとする必要があるときにはモリブデン製、タ
ングステン製のものとしてもよい。この重しを載せたシ
リカは減圧下、例えば2〜4×10-2トールのような減圧
下に1,700℃以下の温度で構成すればよく、これによれ
ばシリカ粉は減圧下で焼成したということから極めて泡
が少ないという性状のものとされる。なお、この加熱は
例えば1,200〜1,250℃の温度で2〜6時間行なったの
ち、1,600〜1,700℃の温度で1〜2時間再加熱すること
がよいが、この1,600〜1,700℃への昇温をゆっくり行な
うとシリカ粉が外側から順次焼結されて泡を内泡するよ
うになるので、これは30℃/分以上という急速加温とす
ることが必要とされる。
In the present invention, firing of silica powder in the carbon crucible is performed in two steps. In this first step, the silica crucible obtained above is filled in a carbon crucible, and then the crucible is weighted and heat-treated at a temperature of 1,700 ° C. or less under reduced pressure. Since bubbles are likely to be formed during firing when the specific gravity is 0.6 or less, it is for making the bulk specific gravity of 0.6 or more, and it is necessary that the weight is 7.5 g / m 2 or more. However, since it is invariable in a high temperature and vacuum atmosphere, and it is cheap and easy to process, it is preferable to use a carbonaceous material, and if it is necessary to make it heavier, use molybdenum or tungsten. Good. The silica loaded with this weight may be formed under a reduced pressure, for example, under a reduced pressure such as 2 to 4 × 10 -2 Torr, at a temperature of 1,700 ° C. or lower. Therefore, it is characterized by having very few bubbles. This heating may be performed at a temperature of 1,200 to 1,250 ° C for 2 to 6 hours and then reheating at a temperature of 1,600 to 1,700 ° C for 1 to 2 hours. If it is done slowly, the silica powder will be sequentially sintered from the outside to form bubbles inside, so it is necessary to perform rapid heating at 30 ° C./min or more.

この第2段階での焼成は同じ炉内で第1段階に引続いて
常圧または加圧下に1,700℃以上という温度で行なうの
であるが、上記した1,700℃以下の温度で焼成したシリ
カ粉を冷却して取出すとβ−クリストバライトがα−ク
リストバライトに変化して微細なクラックをもったもの
となり、これが再加熱すると微細な泡に変化するので、
この第2段階の焼成は上記した第1段階の焼成物を同一
炉内において冷却することなく引続いて行なう必要があ
る。この焼成はシリカ粉を合成石英ガラスとするという
ことから1,700℃以上、例えば1,900〜2,000℃に昇温さ
せて0〜0.5時間行なうことが必要とされるが、これは
泡を少なくするということから常圧または加圧下、例え
ば1〜2気圧という加圧下で行なうことが必要とされ
る。
The firing in the second stage is performed in the same furnace at a temperature of 1,700 ° C or higher under atmospheric pressure or pressure following the first stage, but the silica powder fired at a temperature of 1,700 ° C or lower is cooled. When taken out, β-cristobalite changes to α-cristobalite and has fine cracks, which changes into fine bubbles when reheated,
This second-stage firing needs to be performed successively without cooling the above-mentioned first-stage fired product in the same furnace. Since this calcination uses silica powder as synthetic quartz glass, it is necessary to raise the temperature to 1,700 ° C or higher, for example, 1,900 to 2,000 ° C, and perform it for 0 to 0.5 hours, but this is to reduce bubbles. It is necessary to carry out under atmospheric pressure or under pressure, for example under pressure of 1 to 2 atm.

この第2段階の焼成により始発材としてのコロイダルシ
リカは無色透明な合成石英ガラスとされるが、この工程
が上記のようにされることから、得られる合成石英ガラ
スは高純度、高粘性で泡がなく、脈理の少ないものにな
るという有利性が与えられる。
Colloidal silica as the starting material is made into colorless and transparent synthetic quartz glass by the firing in the second stage, but since this step is performed as described above, the obtained synthetic quartz glass has high purity, high viscosity, and foam. And the advantage of being less striae.

(実施例) つぎに本発明の実施例、比較例をあげる。(Example) Next, the Example of this invention and a comparative example are given.

実施例、比較例 5の石英ガラスフラスコにメチルシリケート27/時
と20重量%のアンモニア水24.5/時を滴下し、メチルシ
リケートを連続的に加水分解してシリカ粉をつくり、こ
のシリカ粉を遠心脱水器で脱水したのち、空気中におい
て10時間かけて、1,100℃に昇温して2時間加熱処理し
て有機物を除去したところ、平均粒径が700nmのコロイ
ダルシリカが得られた。
Example, Comparative Example 5 Methyl silicate 27 / hr and 20 wt% ammonia water 24.5 / hr were dropped into the quartz glass flask, and the methyl silicate was continuously hydrolyzed to produce silica powder, and this silica powder was centrifuged. After dehydration with a dehydrator, the temperature was raised to 1,100 ° C. in the air for 10 hours and the organic matter was removed by heat treatment for 2 hours to obtain colloidal silica having an average particle size of 700 nm.

ついで、このコロイダルシリカをポリプロピレン製の20
0メッシュの篩別機で篩別したところ、200メッシュ以下
のもの500gが収率50%で得られたので、これを直径5イ
ンチ×300のカーボン筒の中に充填し、この上部に約3
50gのカーボン塊をのせ、これを真空熱処理炉内に設置
し、常温で5×10-2トールまで減圧したのち、30分で1,
250℃まで昇温して2.5×10-2トールに3時間保持し、さ
らに10分で1,650℃まで昇温して1時間保持してから窒
素ガスを導入して常圧に戻した。
Then, add this colloidal silica to polypropylene 20
After sieving with a 0 mesh sieving machine, 500 g of 200 mesh or less was obtained with a yield of 50%, so this was filled in a carbon cylinder with a diameter of 5 inches x 300, and about 3
Place 50 g of carbon lumps, place it in a vacuum heat treatment furnace, depressurize to 5 × 10 -2 Torr at room temperature, and
The temperature was raised to 250 ° C. and kept at 2.5 × 10 −2 Torr for 3 hours, further raised to 1,650 ° C. in 10 minutes and kept for 1 hour, and then nitrogen gas was introduced to return to normal pressure.

つぎにこれを30分間で、1,950℃まで昇温させ、30分間
保持したのち、常温まで冷却したところ、合成石英ガラ
スが得られたが、このようにして得た合成石英ガラスは
泡がなくて脈理も少なく、OH基含有量も赤外吸収スペク
トルでは観測されない高粘度のもので、1,400℃におけ
る粘度も3.5×1010ポイズという高粘性のものであっ
た。
Next, this was heated to 1,950 ° C. for 30 minutes, held for 30 minutes, and then cooled to room temperature to obtain a synthetic quartz glass, but the synthetic quartz glass thus obtained had no bubbles. It had a low striae, high OH content, which was not observed in the infrared absorption spectrum, and a high viscosity at 1,400 ° C of 3.5 × 10 10 poise.

しかし、比較のためにゾル−ゲル法でなく、火炎加水分
解法で作られたシリカ・レオロシール(徳山ソーダ
(株)製商品名)を使用し、これについて上記と同様の
処理をして合成石英ガラスを作成したところ、得られた
石英ガラスは軸方向と共に径方向にも収縮する一面があ
り、これは泡の多いものであった。
However, for the purpose of comparison, silica-leoroseal (trade name of Tokuyama Soda Co., Ltd.), which was produced by the flame hydrolysis method instead of the sol-gel method, was used, and the same treatment as above was applied to this. When glass was prepared, the obtained quartz glass had one side that contracted in the axial direction as well as in the radial direction, and this had many bubbles.

(発明の効果) 本発明は高純度,高粘性で泡がなく、脈理も少ない合成
石英ガラスの製造方法に関するものであり、これは前記
したようにゾル−ゲル法で調製されたコロイダルシリカ
を酸化性雰囲気において1,200℃以下で焼成してから80
メッシュ以下に篩別し、ついでカーボンルツボに充填
し、上部から重しをかけて減圧下に1,700℃以下で熱処
理したのち、同一炉内で常圧下または加圧下に1,700℃
以上で熱処理することを特徴とするものであり、これに
よれば始発材としてのコロイダルシリカがゾル−ゲル法
で作られたものであり、これには添加物もないので高純
度の合成石英ガラスが得られるし、この合成石英ガラス
は上記したような方法で作られるので泡がなく、脈理も
少なく、カサ比重が高く、高粘性のものになるので、こ
のものは耐熱基板用、半導体治具母材として有用とされ
るほか、安価であることから一般民生用としても有用と
されるという工業的有利性が与えられる。
(Effects of the Invention) The present invention relates to a method for producing a synthetic quartz glass having high purity, high viscosity, no bubbles, and less striae, which is the colloidal silica prepared by the sol-gel method as described above. 80 after firing at 1,200 ° C or lower in oxidizing atmosphere
After sieving into mesh or less, then filling in a carbon crucible, applying weight from the top and heat-treating under reduced pressure at 1,700 ° C or less, and then in the same furnace at 1,700 ° C under normal pressure or pressure.
The above is characterized by heat treatment, and according to this, colloidal silica as a starting material is made by the sol-gel method, and since it has no additives, it is a high-purity synthetic quartz glass. Since this synthetic quartz glass is produced by the method described above, it is free of bubbles, has less striae, has a high bulk specific gravity, and is highly viscous. In addition to being useful as a base material, it is industrially advantageous because it is cheap and is also useful for general consumers.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−80329(JP,A) 特開 昭62−176931(JP,A) 特開 平3−141129(JP,A) 特開 平2−180723(JP,A) 特開 平3−228839(JP,A) 特開 平3−5329(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-2-80329 (JP, A) JP-A-62-176931 (JP, A) JP-A-3-141129 (JP, A) JP-A-2- 180723 (JP, A) JP-A-3-228839 (JP, A) JP-A-3-5329 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ゾル−ゲル法で調製されたコロイダルシリ
カを酸化性雰囲気において1,200℃以下で焼成してから8
0メッシュ以下に篩別し、ついでカーボンルツボに充填
し、上部から重しをかけて減圧下1,700℃以下で熱処理
したのち、同一炉内で常圧下または加圧下に1,700℃以
上で熱処理することを特徴とする合成石英ガラスの製造
方法。
1. Colloidal silica prepared by the sol-gel method is fired at 1,200 ° C. or lower in an oxidizing atmosphere, and then 8
After sieving to 0 mesh or less, then filling in a carbon crucible, heat it from the top under a reduced pressure of 1,700 ° C or less, and then heat treat it at 1,700 ° C or more under normal pressure or pressure in the same furnace. A method for producing a synthetic quartz glass characterized.
JP27192390A 1990-10-09 1990-10-09 Method for producing synthetic quartz glass Expired - Lifetime JPH0798667B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27192390A JPH0798667B2 (en) 1990-10-09 1990-10-09 Method for producing synthetic quartz glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27192390A JPH0798667B2 (en) 1990-10-09 1990-10-09 Method for producing synthetic quartz glass

Publications (2)

Publication Number Publication Date
JPH04149036A JPH04149036A (en) 1992-05-22
JPH0798667B2 true JPH0798667B2 (en) 1995-10-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP27192390A Expired - Lifetime JPH0798667B2 (en) 1990-10-09 1990-10-09 Method for producing synthetic quartz glass

Country Status (1)

Country Link
JP (1) JPH0798667B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006089754A1 (en) * 2005-02-23 2006-08-31 Heraeus Quarzglas Gmbh & Co. Kg Method for the manufacture of a silica glass product

Also Published As

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JPH04149036A (en) 1992-05-22

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