JPH0799403B2 - Wave plate - Google Patents
Wave plateInfo
- Publication number
- JPH0799403B2 JPH0799403B2 JP61132730A JP13273086A JPH0799403B2 JP H0799403 B2 JPH0799403 B2 JP H0799403B2 JP 61132730 A JP61132730 A JP 61132730A JP 13273086 A JP13273086 A JP 13273086A JP H0799403 B2 JPH0799403 B2 JP H0799403B2
- Authority
- JP
- Japan
- Prior art keywords
- grating
- dielectric medium
- layer
- lattice
- wave plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010030 laminating Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920003203 poly(dimethylsilylene-co-phenylmethyl- silylene) polymer Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は直交する２つの直線偏光の間に位相差を生ぜ
しめる、1/4波長板,1/2波長板，全波長板等の波長板に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention has a wavelength of a 1/4 wave plate, a 1/2 wave plate, a full wave plate, etc., which causes a phase difference between two orthogonal linearly polarized lights. It is about boards.
従来、波長板は水晶の結晶を研磨して、常光と異常光の
位相差が、1/4波長板では（Ｎ＋1/4）波長（Ｎは整
数）、1/2波長板では（Ｎ＋1/2）波長、全波長板ではＮ
波長になるような厚さに調整して製作されている。Conventionally, the wave plate is made by polishing a crystal of quartz, and the phase difference between ordinary and extraordinary light is (N + 1/4) wavelength (N is an integer) in the 1/4 wave plate and (N + 1/2) in the 1/2 wave plate. ) Wavelength, N for all wave plates
It is manufactured by adjusting the thickness to the wavelength.
このような結晶研磨による方法以外に、誘電体に形成し
た高密度の表面レリーフ格子が複屈折を示すことから、
格子を用いる方法も提案されている。表面レリーフ格子
を用いた波長板の提案と実験は、アプライド・フィジッ
クス・レター（Applied Physics Letter）誌，第42巻，
第６号（1983年３月15日発行）第492〜494頁掲載のD.C.
Flanders著の論文、及び、アプライド・オプティクス
（Applied Optics）誌，第22巻，第20号（1983年10月15
日発行）第3220〜3228頁掲載のR.C.EngerとS.K.Case著
の論文に述べられている。In addition to such a method by crystal polishing, since the high-density surface relief grating formed on the dielectric exhibits birefringence,
A method using a lattice has also been proposed. The proposal and experiment of the wave plate using the surface relief grating are described in Applied Physics Letter, Vol. 42,
No. 6 (Published March 15, 1983) DC on pages 492-494
Paper by Flanders and Applied Optics, Vol.22, No.20 (October 15, 1983)
(Published in Japan) on pages 3220-3228 by RC Enger and SK Case.
格子を用いた波長板は、格子のピッチをｄ、使用波長を
λとすると、λがｄに比べて十分大きい領域では、格子
の溝に平行な方向の屈折率nIIと、格子の溝に直交する
方向の屈折率n⊥が異なることを利用しており、前述の
D.C.Flanders著の論文によると、格子が矩形状の場合、
nII，n⊥は次式で与えられる。In a wavelength plate using a grating, when the grating pitch is d and the wavelength used is λ, in the region where λ is sufficiently larger than d, the refractive index n II in the direction parallel to the groove of the grating and the grating groove It takes advantage of the fact that the refractive index n ⊥ in the orthogonal direction is different.
According to a paper by DC Flanders, if the grid is rectangular,
n II and n ⊥ are given by the following equation.
nII＝〔n1 2ｑ＋n2 2（１−ｑ）〕1/2……（１） n⊥＝〔(1/n1)2q+(1/n2)2(1-q)〕-1/2……（２） ここでn1は媒質１の屈折率、n2は媒質２の屈折率、ｑは
格子の１周期中に媒質１の占める割合で１≧ｑ≧０であ
る。複屈折の大きさはΔｎは次式で与えられる。n II = [n 1 2 q + n 2 2 (1-q)] 1/2 ...... (1) n ⊥ = [(1 / n 1 ) 2 q + (1 / n 2 ) 2 (1-q)] - 1/2 (2) Here, n 1 is the refractive index of the medium 1, n 2 is the refractive index of the medium 2, and q is the ratio of the medium 1 in one period of the grating, and 1 ≧ q ≧ 0. The magnitude of birefringence Δn is given by the following equation.
Δｎ＝｜nII-n⊥｜……（３） また、複屈折の大きさはΔｎを有する格子に入射した光
が受ける位相差ΔΦは次式で与えられる。Δn = | n II −n ⊥ | (3) Further, the phase difference ΔΦ received by the light incident on the grating having the magnitude of birefringence is Δn is given by the following equation.
ここでＤは格子の溝深さである。（４）式から、大きな
位相差ΔΦを得るには溝深さＤを大きくするか、または
複屈折の大きさΔｎを大きくすればよい。この関係は格
子形状が矩形である場合に限らず、正弦波状，三角波状
等の場合でも成り立つ。 Here, D is the groove depth of the lattice. From the equation (4), in order to obtain a large phase difference ΔΦ, the groove depth D may be increased or the birefringence size Δn may be increased. This relationship is not limited to the case where the lattice shape is rectangular, and holds even when the shape is a sine wave, a triangle wave, or the like.
表面レリーフ格子による波長板は、主に次の２つの方法
により製造できる。The wave plate with the surface relief grating can be manufactured mainly by the following two methods.
第１の方法は干渉露光法によりホトレジストに表面レリ
ーフ格子を形成し、その格子からニッケル電鋳法で金型
を製作し、熱可塑性樹脂にホットプレス法や射出成形法
で転写する、あるいは光硬化性樹脂に転写する方法であ
る。The first method is to form a surface relief grating on a photoresist by interference exposure method, and then manufacture a mold by nickel electroforming from the grating, and transfer it to a thermoplastic resin by a hot press method or an injection molding method, or photocuring. It is a method of transferring to a resin.
第２の方法は誘電体基板上に第１の方法と同様の方法で
ホトレジスト格子を形成し、ホトレジストをマスクとし
て誘電体基板をイオンエッチング法、または反応性イオ
ンエッチング法、またはイオンビームエッチング法、ま
たは反応性イオンエッチング法によりエッチングし、表
面レリーフ格子を得る方法である。The second method is to form a photoresist grid on the dielectric substrate by the same method as the first method, and use the photoresist as a mask to etch the dielectric substrate by an ion etching method, a reactive ion etching method, or an ion beam etching method. Alternatively, it is a method of obtaining a surface relief grating by etching by a reactive ion etching method.
上述の従来の技術には、格子の溝幅に対して溝深さが極
端に大きくなるという問題点がある。たとえば、使用波
長λをHe-Neレーザの632.8mmとする。この波長に対して
前述の第１の製造方法で用いられる熱可塑性樹脂たとえ
ばアクリル樹脂、光硬化性樹脂たとえばスリーボンド社
製のUVX-SS-89-1および第２の製造方法において主に用
いられる石英ガラスの屈折率はおよそ1.5〜1.6である。
以下では熱可塑性樹脂、光硬化性樹脂および石英ガラス
を媒質１とし、その屈折率n1を1.55とする。また、媒質
２を空気とし、その屈折率n2を1.00とする。格子形状が
矩形の場合、媒質１が格子の１周期中に占める割合ｑを
0.5とすれば複屈折の大きさΔｎは（１），（２），
（３）式より0.116となる。したがって（４）式より1/4
波長板,1/2波長板，全波長板に必要な溝深さＤはそれぞ
れ1.36μm,2.73μm,5.46μｍになる。また格子ピッチｄ
に関して、高密度性に基づく複屈折を得るにはλ/d≧1.
472である必要があるので、ｄ≦0.43μｍなる条件を満
足しなければならない。ｑ＝0.5であるから格子の溝幅
Ｗは、Ｗ≦0.21μｍとなる。したがって、溝幅0.21μｍ
以下、溝深さ1.36μｍ〜5.46μｍの格子を作製しなれば
ならない。The above-mentioned conventional technique has a problem that the groove depth becomes extremely large with respect to the groove width of the grating. For example, the used wavelength λ is set to 632.8 mm of He-Ne laser. For this wavelength, a thermoplastic resin such as an acrylic resin, a photocurable resin such as UVX-SS-89-1 manufactured by ThreeBond Co., and quartz used mainly in the second manufacturing method are used in the first manufacturing method. The refractive index of glass is approximately 1.5 to 1.6.
Below, a thermoplastic resin, a photocurable resin, and quartz glass are used as medium 1, and the refractive index n 1 thereof is set to 1.55. Further, the medium 2 is air, and its refractive index n 2 is 1.00. When the lattice shape is rectangular, the ratio q of the medium 1 to one period of the lattice is
If it is 0.5, the birefringence magnitude Δn is (1), (2),
It becomes 0.116 from the formula (3). Therefore, from equation (4), 1/4
The groove depths D required for the wave plate, the half wave plate, and the whole wave plate are 1.36 μm, 2.73 μm, and 5.46 μm, respectively. Also, the grid pitch d
Regarding, for obtaining birefringence based on high density, λ / d ≧ 1.
Since it must be 472, the condition of d ≦ 0.43 μm must be satisfied. Since q = 0.5, the groove width W of the lattice is W ≦ 0.21 μm. Therefore, the groove width is 0.21 μm
Hereinafter, a grating having a groove depth of 1.36 μm to 5.46 μm must be manufactured.
このような格子を第１の製造方法で製造する場合、媒質
１と電鋳金型との実効的な接触表面積が著しく増大する
ために、金型面からはく離する時の引張りせん断力が大
きくなる。このために、はく離時に硬化した媒質１が基
板からはがれ、金型面に残留してしまい、表面レリーフ
格子の転写が困難になるという問題点がある。When such a lattice is manufactured by the first manufacturing method, the effective contact surface area between the medium 1 and the electroformed mold is remarkably increased, so that the tensile shearing force at the time of peeling from the mold surface becomes large. For this reason, there is a problem that the medium 1 which has been hardened at the time of peeling is peeled off from the substrate and remains on the mold surface, making it difficult to transfer the surface relief grating.
また、第２の製造方法では、エッチングに要する時間が
数時間にも及び、エッチングに耐え得るホトレジストマ
スクは、厚さ数μｍになることから、ホトレジストマス
クの形成が困難である。また、ホトレジストに形成した
格子をエッチング耐性の強い物質、たとえばクロムに転
写し、その物質をマスクとしてエッチングを行う場合に
おいても、格子溝深さの増加に伴い、一度エッチングさ
れた誘電体の基板表面への再付着や、溝底部への活性
種，イオン，中性粒子の到達粒子数の減少などによりエ
ッチングの進行が阻止され、所望の格子の形成が困難で
ある。このような問題は格子の形状によらず生じる。Further, in the second manufacturing method, the time required for etching is several hours, and the photoresist mask that can withstand etching has a thickness of several μm. Therefore, it is difficult to form the photoresist mask. In addition, when the lattice formed on the photoresist is transferred to a substance having strong etching resistance, for example, chromium, and etching is performed using the substance as a mask, the substrate surface of the dielectric substrate once etched is increased as the lattice groove depth increases. It is difficult to form a desired lattice due to re-attachment to the bottom of the groove and reduction of the number of particles reaching the bottom of the groove of active species, ions and neutral particles. Such a problem occurs regardless of the shape of the lattice.
以上述べたように従来技術による表面レリーフ格子型の
波長板は製造が困難であるという欠点を有している。As described above, the surface relief grating type wave plate according to the prior art has a drawback that it is difficult to manufacture.
本発明の目的は、このような従来技術の問題点を解決
し、製造が容易な表面レリーフ格子型の波長板を提供す
ることにある。An object of the present invention is to solve the above problems of the prior art and to provide a surface relief grating type wave plate which is easy to manufacture.
本発明の波長板は、使用波長λにおける格子ピッチｄが
λ/d≧1.472なる表面レリーフ格子を形成した屈折率n1
を有する第１の誘電体媒質層と、前記表面レリーフ格子
を充填、あるいは被覆するn2≠n1なる屈折率n2を有する
第２の誘電体媒質層とを交互に積層したことを特徴とす
る。The wave plate of the present invention has a refractive index n 1 formed by forming a surface relief grating having a grating pitch d of λ / d ≧ 1.472 at a used wavelength λ.
And a second dielectric medium layer having a refractive index n 2 that fills or covers the surface relief grating and has a refractive index n 2 of n 2 ≠ n 1 is alternately laminated. To do.
本発明の作用を図面を参照しながら詳細に説明する。 The operation of the present invention will be described in detail with reference to the drawings.
格子に入射する光が受ける位相差ΔΦは、格子の溝深さ
Ｄと複屈折の大きさΔｎに比例する。本発明は前述の第
１の製造方法および第２の製造方法によって製造される
格子の溝深さＤを増加させることなく、等価的な溝深さ
Ｄ′を増加させることにより、前述の従来技術の問題点
を解決しようとするものである。The phase difference ΔΦ received by the light incident on the grating is proportional to the groove depth D of the grating and the magnitude Δn of the birefringence. The present invention increases the equivalent groove depth D ′ without increasing the groove depth D of the gratings manufactured by the first manufacturing method and the second manufacturing method described above. It is intended to solve the problem of.
第２図は本発明を説明するための図である。屈折率n1を
有する第１層目の第１の誘電体媒質４に、使用波長をλ
としてλ/d≧1.472なる条件を満足するピッチｄを有す
る矩形格子５が形成され、その格子表面がn1≠n2なる屈
折率n2を有する第１層目の第２の誘電体媒質６が充填さ
れる。この場合の格子部の複屈折の大きさΔn1は、格子
の１周期中に占める第１の誘電体媒質の割合をq1とする
と、（１），（２），（３）式より Δn1＝〔n1 2q1＋n2 2(1-q1)〕1/2 -〔(1/n1)2q1+(1/n2)2(1-q1)〕-1/2……（５） となる。格子の溝深さをD1とすれば、この第１層目の格
子に入射した光が受ける位相差ΔΦ1は（４）式より となる。FIG. 2 is a diagram for explaining the present invention. For the first dielectric medium 4 of the first layer having the refractive index n 1 , the operating wavelength is λ
Rectangular grid 5 having a pitch d which satisfies the lambda / d ≧ 1.472 The condition is formed as the second dielectric medium 6 of the first layer having a refractive index n 2 of the grating surface is n 1 ≠ n 2 Is filled. In this case, the magnitude of birefringence Δn 1 of the grating portion is Δn from equations (1), (2), and (3), where q 1 is the proportion of the first dielectric medium in one period of the grating. 1 = [n 1 2 q 1 + n 2 2 (1-q 1 )] 1/2 -[(1 / n 1 ) 2 q 1 + (1 / n 2 ) 2 (1-q 1 )] -1 / 2 …… (5) Assuming that the groove depth of the grating is D 1 , the phase difference ΔΦ 1 received by the light incident on the grating of the first layer is calculated from the equation (4). Becomes
次に、第１層目の第２の誘電体媒質６上に、第１層目の
格子と格子溝の方向，ピッチとも同じである矩形格子８
を有する第２層目の第１の誘電体媒質７が形成される。
ここで、第２図に示すように第１層目の格子と第２層目
の格子の凹凸の位置は一致している必要はない。さら
に、第２層目の第１の誘電体媒質の格子表面が、第２層
目の第２の誘電体媒質９で充填される。第２層目の格子
部の複屈折の大きさΔn2は、格子の１周期中に占める第
１の誘電体媒質７の割合をq2とすれば、第１層目の格子
の場合と同様な式で与えられ、 Δn2＝〔n1 2q2＋n2 2(1-q2)〕1/2 +〔(1/n1)2q2+(1/n2)2(1-q2)〕-1/2……（７） となり、入射光が第２層目の格子で受ける位相差ΔΦ2
は第２層目の格子深さをD2とすれば、 となる。Next, on the second dielectric medium 6 of the first layer, a rectangular lattice 8 having the same direction and pitch as the lattice of the first layer and the lattice grooves.
The first dielectric medium 7 of the second layer having is formed.
Here, as shown in FIG. 2, the positions of the concavities and convexities of the first-layer lattice and the second-layer lattice do not have to match. Furthermore, the lattice surface of the first dielectric medium of the second layer is filled with the second dielectric medium 9 of the second layer. The magnitude of birefringence Δn 2 of the grating portion of the second layer is the same as that of the grating of the first layer, where q 2 is the proportion of the first dielectric medium 7 in one period of the grating. Δn 2 = [n 1 2 q 2 + n 2 2 (1-q 2 )] 1/2 + [(1 / n 1 ) 2 q 2 + (1 / n 2 ) 2 (1- q 2 )] -1/2 (7), and the phase difference ΔΦ 2 that the incident light receives at the second layer grating
Let D 2 be the lattice depth of the second layer, Becomes
以降、同様に第１の誘電体媒質と第２の誘電体媒質から
成る格子層をｍ層（ｍは整数）積層すると、第ｋ番目の
格子層の複屈折の大きさΔnkは、ｋ番目の格子の１周期
中に占める第１の誘電体媒質の割合をqkとすると、 Δnk＝〔n1 2qk＋n2 2(1-qk)〕1/2 +〔(1/n1)2qk+(1/n2)2(1-qk)〕-1/2……（９） となり、格子の溝深さをDkとすれば、入射光がｋ番目の
格子で受ける位相差ΔΦkは、 となる。したがって、ｍ個の格子層を通過した光が受け
る位相差ΔΦは、 となる。層数ｍを増加することにより、各層の格子の溝
深さDkを大きくすることなくΔΦを大きくすることがで
きる。なお、第２図において、10は、第ｍ層目の第１の
誘電体媒質を、11は矩形格子を、12は第ｍ層目の第２の
誘電体媒質を示している。Thereafter, when m layers (m is an integer) of lattice layers composed of the first dielectric medium and the second dielectric medium are laminated in the same manner, the birefringence magnitude Δn k of the kth lattice layer is kth. Let q k be the ratio of the first dielectric medium in one period of the grating of Δn k = [n 1 2 q k + n 2 2 (1-q k )] 1/2 + [(1 / n 1 ) 2 q k + (1 / n 2 ) 2 (1-q k )] -1/2 (9), and letting the groove depth of the grating be D k , the incident light is the k-th grating. The phase difference ΔΦ k Becomes Therefore, the phase difference ΔΦ received by the light passing through the m lattice layers is Becomes By increasing the number of layers m, ΔΦ can be increased without increasing the groove depth D k of the lattice of each layer. In FIG. 2, 10 is the first dielectric medium of the m-th layer, 11 is the rectangular lattice, and 12 is the second dielectric medium of the m-th layer.
第３図は本発明を説明するための図で、第１の誘電体媒
質に形成された格子の表面が第２の誘電体媒質で被覆さ
れている。図中、４は第１層目の第１の誘電体媒質、５
は矩形格子、６は第１層目の第２の誘電体媒質、７は第
２層目の第１の誘電体媒質、８は矩形格子、９は第２層
目の第２の誘電体媒質である。FIG. 3 is a diagram for explaining the present invention, in which the surface of the grating formed in the first dielectric medium is covered with the second dielectric medium. In the figure, 4 is the first dielectric medium of the first layer, 5
Is a rectangular lattice, 6 is the second dielectric medium of the first layer, 7 is the first dielectric medium of the second layer, 8 is a rectangular lattice, and 9 is the second dielectric medium of the second layer. Is.
第４図は第３図のうちの第ｋ層の格子を拡大して示した
ものである。格子の１周期中に第１の誘電体媒質が占め
る割合の変化に伴い、格子を縦方向にａ層13,b層14,c層
15に分け、その割合をqka,qkb,qkcとすれば各層の複屈
折の大きさΔnks（ｓ＝a,b,c）は、 Δnks＝〔n1 2qks＋n2 2(1-qks)〕1/2 -〔(1/n1)2qks+(1/n2)2(1-qks)〕-1/2……（12） となり、各層の層厚さをDka,Dkb,Dkcとすれば、入射光
が第ｋ層で受ける位相差ΔΦkは、 となる。ここで Dk＝Dka+Dkb……（14） である。このような格子がｍ層積層された場合、全格子
層を通過する光が受ける位相差ΔΦは、 となる。この場合も層数ｍを増やせばDkを大きくするこ
となく大きなΔΦを得ることができる。FIG. 4 is an enlarged view of the lattice of the k-th layer in FIG. As the ratio of the first dielectric medium occupied in one period of the lattice changes, the lattice is vertically aligned in the layers a, b, 14 and c.
If divided into 15, and the ratio is q ka , q kb , q kc , the birefringence magnitude Δn ks (s = a, b, c) of each layer is Δn ks = [n 1 2 q ks + n 2 2 (1-q ks )] 1/2 -[(1 / n 1 ) 2 q ks + (1 / n 2 ) 2 (1-q ks )] -1/2 ...... (12) If the thicknesses are D ka , D kb , and D kc , the phase difference ΔΦ k that the incident light receives at the k-th layer is Becomes Where D k = D ka + D kb (14). When m layers of such a grating are laminated, the phase difference ΔΦ received by the light passing through all the grating layers is Becomes Also in this case, if the number of layers m is increased, a large ΔΦ can be obtained without increasing D k .
つまり、屈折率n1を有する第１の誘電体媒質に形成され
た表面レリーフ格子の表面をn1≠n2なる屈折率n2を有す
る第２の誘電体媒質で充填、あるいは被覆し、以降、順
次表面レリーフ格子を有する第１の誘電体媒質と、その
表面を充填、あるいは被覆する第２の誘電体媒質を必要
な位相差が得られるまで積層することにより、第１の誘
電体媒質に形成される格子の溝深さを小さくすることが
でき、製作の容易な波長板が得られる。That is, the surface of the surface relief grating formed on the first dielectric medium having the refractive index n 1 is filled or covered with the second dielectric medium having the refractive index n 2 such that n 1 ≠ n 2 , , By sequentially stacking a first dielectric medium having a surface relief grating and a second dielectric medium filling or covering the surface thereof until a required phase difference is obtained, The groove depth of the formed grating can be reduced, and a wave plate that is easy to manufacture can be obtained.
格子が矩形状でなく、正弦波状，三角波状等の場合も同
様で、必要な位相差が得られるまで格子を有する第１の
誘電体媒質と第２の誘電体媒質を積層することにより製
作の容易な波長板が得られる。The same applies when the grating is not rectangular but sinusoidal, triangular, etc., and is manufactured by stacking the first dielectric medium and the second dielectric medium having the grating until the required phase difference is obtained. An easy wave plate can be obtained.
以下、本発明の実施例について、図面を参照して説明す
る。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を示す断面図でλ/2板の製作
例を示している。実際の製作には、第１の誘電体媒質１
として光硬化性樹脂であるスリーボンド社製のUVX-SS89
-1を、第２の誘電体媒質２として新日曹化工社製のポリ
シラスチレンPSS75を用いた。前者の屈折率は1.52、後
者の屈折率は約2.5である。使用波長はHe-Neレーザの63
2.8nmである。光硬化性樹脂への格子パターンの転写は
金型を用いて行った。FIG. 1 is a sectional view showing an embodiment of the present invention, showing an example of manufacturing a λ / 2 plate. For the actual fabrication, the first dielectric medium 1
UVX-SS89 made by ThreeBond, which is a photocurable resin as
-1 was used as the second dielectric medium 2 of polysilastyrene PSS75 manufactured by Shin Nisso Kako. The former has a refractive index of 1.52 and the latter has a refractive index of about 2.5. The operating wavelength is 63 of He-Ne laser.
2.8 nm. The transfer of the lattice pattern to the photocurable resin was performed using a mold.
この金型は次のように製作した。He-Cdレーザの波長44
1.6nmの光ビームを用いて干渉計を構成し、ホログラフ
ィックにλ/d≧1.472を満足するピッチｄ＝0.3μｍの格
子をガラス上のホトレジストに形成し、現像後のホトレ
ジストパターンをマスクとしてガラスを反応性イオンビ
ームエッチング法によりエッチングを行い、ガラスに断
面が矩形状である格子を作製した。ガラスに形成される
格子の溝深さは次のように決定した。光硬化性樹脂の屈
折率が1.52、ポリシラスチレンの屈折率が約2.5である
ことから、これらの誘電体媒質で矩形格子を形成する
と、ｑ＝0.5の場合、複屈折の大きさΔｎは（７）式よ
りΔｎ＝0.232となる。各層に作製される格子のｑは全
て0.5であり、かつ溝深さも全て等しいとする。このよ
うな条件の下で、λ/2板作製に必要な溝深さＤ′は（1
1）式よりＤ′＝1.362μｍとなる。第１図に示すように
λ/2板を５層に分けて作製するとすれば、各層に形成さ
れる格子の溝深さＤは、 Ｄ＝Ｄ′/5＝272.6nm となる。このことより、ガラスには272.6nmの溝深さを
有する格子を形成した。ガラス上の格子の溝深さは反応
性イオンビームエッチングの実施時間により容易に制御
できる。ガラス上に製作した格子からニッケル電鋳法に
より金型を製作した。This mold was manufactured as follows. He-Cd laser wavelength 44
An interferometer is constructed by using a 1.6 nm light beam, and a holographic grating with a pitch d = 0.3 μm that satisfies λ / d ≧ 1.472 is formed on a photoresist on glass, and the photoresist pattern after development is used as a mask for the glass. Was etched by the reactive ion beam etching method to form a lattice having a rectangular cross section on the glass. The groove depth of the grating formed on the glass was determined as follows. Since the refractive index of the photocurable resin is 1.52 and the refractive index of polysilastyrene is about 2.5, when a rectangular lattice is formed with these dielectric media, the birefringence magnitude Δn becomes From equation 7), Δn = 0.232. It is assumed that the qs of the lattices formed in each layer are all 0.5 and the groove depths are all the same. Under such conditions, the groove depth D ′ required for λ / 2 plate fabrication is (1
From equation (1), D '= 1.362 μm. If the λ / 2 plate is divided into five layers as shown in FIG. 1, the groove depth D of the grating formed in each layer is D = D ′ / 5 = 272.6 nm. From this, a grating having a groove depth of 272.6 nm was formed on the glass. The groove depth of the lattice on the glass can be easily controlled by the duration of the reactive ion beam etching. A metal mold was made from a grid made on glass by nickel electroforming.
この金型を用いて光硬化性樹脂１に格子３を形成し、格
子表面に液状のポリシラスチレン２を塗布し溶剤を乾燥
させることにより１層の格子が作製できる。固化した光
硬化性樹脂上に、液状のポリシラスチレンを塗布する場
合、あるいは固化したポリシラスチレン上に液状のポリ
シラスチレンを塗布する場合、一方の溶剤が下地の誘電
体媒質と反応する問題点があるが、各誘電体媒質膜作製
後、誘電体媒質表面にアルゴンイオンプラズマ、あるい
はフッ素プラズマを照射し、誘電体媒質表面の溶剤に対
する耐性を向上することにより、この問題は回避でき
る。Using this mold, a grating 3 is formed on the photo-curable resin 1, liquid polysilastyrene 2 is applied to the surface of the grating, and the solvent is dried to form a one-layer grating. When applying liquid polysilastyrene on solidified photo-curable resin, or when applying liquid polysilastyrene on solidified polysilastyrene, one solvent reacts with the underlying dielectric medium Although there is a point, this problem can be avoided by irradiating the surface of the dielectric medium with argon ion plasma or fluorine plasma after forming each dielectric medium film to improve the resistance of the surface of the dielectric medium to the solvent.
以上述べた方法により５層の格子を作製し、所望のλ/2
板を得た。A five-layer lattice was prepared by the method described above, and the desired λ / 2
I got a plate.
以上述べたように本発明によれば、製作の容易な表面レ
リーフ格子格子を利用した波長板が得られる。また、表
面レリーフ格子を金型から転写すれば量産性にも富む。
使用波長を変更した場合でも積層数を変化させることで
容易に対応できる。As described above, according to the present invention, it is possible to obtain a wave plate using a surface relief grating that is easy to manufacture. In addition, if the surface relief grating is transferred from a mold, mass productivity is also high.
Even if the used wavelength is changed, it can be easily dealt with by changing the number of laminated layers.
第１図は本発明の一実施例を模式的に示す断面図、 第２図〜第４図は本発明の原理を示す断面図である。 １……第１の誘電体媒質 ２……第２の誘電体媒質 ３……格子 ４……第１層目第１の誘電体媒質 5,8,11……矩形格子 ６……第１層目第２の誘電体媒質 ７……第２層目第１の誘電体媒質 ９……第２層目第２の誘電体媒質 10……第ｍ層目第１の誘電体媒質 12……第ｍ層目第２の誘電体媒質 13……ａ層 14……ｂ層 15……ｃ層 FIG. 1 is a sectional view schematically showing an embodiment of the present invention, and FIGS. 2 to 4 are sectional views showing the principle of the present invention. 1 ... First dielectric medium 2 ... Second dielectric medium 3 ... Lattice 4 ... First layer First dielectric medium 5,8,11 ... Rectangular lattice 6 ... First layer Second dielectric medium 7 ... second layer first dielectric medium 9 ... second layer second dielectric medium 10 ... mth layer first dielectric medium 12 ... m-th layer second dielectric medium 13 ... a layer 14 ... b layer 15 ... c layer
Claims (1)
1.472なる表面レリーフ格子を形成した屈折率n1を有す
る第１の誘電体媒質層と、前記表面レリーフ格子を充
填、あるいは被覆するn2≠n1なる屈折率n2を有する第２
の誘電体媒質層とを交互に積層したことを特徴とする波
長板。1. A grating pitch d at a used wavelength λ is λ / d ≧.
1.472 a first dielectric medium layer having a refractive index n 1 forming a surface relief grating and a second dielectric medium layer having a refractive index n 2 filling or covering the surface relief grating n 2 ≠ n 1 .
2. A wave plate characterized by alternately laminating the dielectric medium layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61132730A JPH0799403B2 (en) | 1986-06-10 | 1986-06-10 | Wave plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61132730A JPH0799403B2 (en) | 1986-06-10 | 1986-06-10 | Wave plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62289804A JPS62289804A (en) | 1987-12-16 |
| JPH0799403B2 true JPH0799403B2 (en) | 1995-10-25 |
Family
ID=15088249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61132730A Expired - Lifetime JPH0799403B2 (en) | 1986-06-10 | 1986-06-10 | Wave plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0799403B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781756B1 (en) | 1995-08-29 | 2004-08-24 | Olympus Corporation | Diffractive optical element |
| CN1104002C (en) * | 1996-07-30 | 2003-03-26 | 三星电子株式会社 | Optical pickup |
| JP3325825B2 (en) | 1997-03-29 | 2002-09-17 | 彰二郎 川上 | Three-dimensional periodic structure, method for producing the same, and method for producing film |
| JP3288976B2 (en) | 1998-08-07 | 2002-06-04 | 彰二郎 川上 | Polarizer and its manufacturing method |
| WO2003019247A1 (en) | 2001-08-24 | 2003-03-06 | Asahi Glass Company, Limited | Multi-layer diffraction type polarizer and liquid crystal element |
-
1986
- 1986-06-10 JP JP61132730A patent/JPH0799403B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62289804A (en) | 1987-12-16 |
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