JPH0799747B2 - ガ−ドリング構造を有するプレ−ナ形の半導体デバイスおよびその製造方法 - Google Patents

ガ−ドリング構造を有するプレ−ナ形の半導体デバイスおよびその製造方法

Info

Publication number
JPH0799747B2
JPH0799747B2 JP61092444A JP9244486A JPH0799747B2 JP H0799747 B2 JPH0799747 B2 JP H0799747B2 JP 61092444 A JP61092444 A JP 61092444A JP 9244486 A JP9244486 A JP 9244486A JP H0799747 B2 JPH0799747 B2 JP H0799747B2
Authority
JP
Japan
Prior art keywords
thickness
guard ring
concentration
group
operating voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61092444A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61248555A (ja
Inventor
ミンク−チャウ・ヌギュエン
Original Assignee
エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン filed Critical エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン
Publication of JPS61248555A publication Critical patent/JPS61248555A/ja
Publication of JPH0799747B2 publication Critical patent/JPH0799747B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/013—Breakdown voltage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/07—Guard rings and cmos

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP61092444A 1985-04-26 1986-04-23 ガ−ドリング構造を有するプレ−ナ形の半導体デバイスおよびその製造方法 Expired - Lifetime JPH0799747B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8506410A FR2581252B1 (fr) 1985-04-26 1985-04-26 Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
FR8506410 1985-04-26

Publications (2)

Publication Number Publication Date
JPS61248555A JPS61248555A (ja) 1986-11-05
JPH0799747B2 true JPH0799747B2 (ja) 1995-10-25

Family

ID=9318733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61092444A Expired - Lifetime JPH0799747B2 (ja) 1985-04-26 1986-04-23 ガ−ドリング構造を有するプレ−ナ形の半導体デバイスおよびその製造方法

Country Status (5)

Country Link
US (1) US5028548A (de)
EP (1) EP0199424B1 (de)
JP (1) JPH0799747B2 (de)
DE (1) DE3672519D1 (de)
FR (1) FR2581252B1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
US5032878A (en) * 1990-01-02 1991-07-16 Motorola, Inc. High voltage planar edge termination using a punch-through retarding implant
US5266831A (en) * 1991-11-12 1993-11-30 Motorola, Inc. Edge termination structure
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
US6002159A (en) * 1996-07-16 1999-12-14 Abb Research Ltd. SiC semiconductor device comprising a pn junction with a voltage absorbing edge
JP3632344B2 (ja) * 1997-01-06 2005-03-23 日産自動車株式会社 半導体装置
EP1029358A1 (de) * 1997-11-03 2000-08-23 Infineon Technologies AG Hochspannungsfeste randstruktur für halbleiterbauelemente
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
GB2403346B (en) * 2000-10-31 2005-05-11 Fuji Electric Co Ltd Semiconductor device
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
DE10250608B4 (de) * 2002-10-30 2005-09-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung
US7595542B2 (en) * 2006-03-13 2009-09-29 Fairchild Semiconductor Corporation Periphery design for charge balance power devices
US7592668B2 (en) * 2006-03-30 2009-09-22 Fairchild Semiconductor Corporation Charge balance techniques for power devices
US7541247B2 (en) * 2007-07-16 2009-06-02 International Business Machines Corporation Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8049276B2 (en) * 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
JP5558393B2 (ja) * 2011-03-10 2014-07-23 株式会社東芝 半導体装置
JP2012195519A (ja) * 2011-03-18 2012-10-11 Kyoto Univ 半導体素子及び半導体素子の製造方法
US9129819B2 (en) * 2011-08-05 2015-09-08 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
EP3353814B1 (de) * 2015-11-27 2019-07-10 ABB Schweiz AG Flächeneffizienter abschluss mit schwebenden feldringen
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
CN107611165A (zh) * 2016-07-12 2018-01-19 北大方正集团有限公司 分压环的制备方法、分压环和功率晶体管
JP7190256B2 (ja) 2018-02-09 2022-12-15 ローム株式会社 半導体装置
US10361276B1 (en) * 2018-03-17 2019-07-23 Littelfuse, Inc. Embedded field plate field effect transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (de) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS523277B2 (de) * 1973-05-19 1977-01-27
FR2480036A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
DE3131611A1 (de) * 1981-08-10 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Epitaxialer transistor
US4573064A (en) * 1981-11-02 1986-02-25 Texas Instruments Incorporated GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
JPS6012859A (ja) * 1983-06-20 1985-01-23 Ricoh Co Ltd フアクシミリ・複写機・ソ−タ複合装置

Also Published As

Publication number Publication date
FR2581252A1 (fr) 1986-10-31
EP0199424A3 (en) 1987-01-21
FR2581252B1 (fr) 1988-06-10
EP0199424A2 (de) 1986-10-29
EP0199424B1 (de) 1990-07-11
US5028548A (en) 1991-07-02
DE3672519D1 (de) 1990-08-16
JPS61248555A (ja) 1986-11-05

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