JPH08102016A - Method of manufacturing thin film magnetic head - Google Patents

Abstract

Kind Code: A1 Abstract: A thin film magnetic head manufacturing method capable of eliminating a step on a side surface of a lower shield layer and forming a predetermined layer thereafter with high accuracy and high quality. 1. A substrate protective layer 2 is formed on the entire surface of the substrate 1 (FIG. (A)), and a resist 2 is formed on the surface of the lower shield layer film 3'formed on the surface of the substrate protective layer by exposure and development.
Ion milling is performed in the state where 0 is formed to form the lower shield layer 3 having a predetermined shape (FIG. (B)). Then, a predetermined material is deposited over the entire surface so as to cover the substrate protective layer and the lower shield layer (FIG. (C)). In this state, the surface is flattened to form the auxiliary protective layer 21 which is flush with the surface of the lower shield layer (FIG. (D)). After that, layers with a predetermined pattern are sequentially laminated, but since there is no step on the side surface of the lower shield layer, even if the film is formed on the entire surface to form a very thin layer, it is not cut at the side surface of the lower shield layer. Then, a desired layer is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film magnetic head, and more particularly to improvement of a process for forming a lower shield layer.

[0002]

2. Description of the Related Art A typical manufacturing process of a composite type thin film magnetic head using an MR element includes the following steps. As shown in FIG. 9, a substrate protective layer 2 made of Al ₂ O ₃ is formed on the entire surface of a substrate 1 made of Al ₂ O ₃ TiC, and a vacuum film forming method F etc. is formed on the entire surface of the substrate protective layer 2.
A lower shield layer film 3'having a predetermined shape made of eN or FeAlSi is formed. Then, the lower shield layer 3 having a predetermined shape (the same shape as the mask M) is formed by covering a predetermined portion with the photoresist M or the like as a mask and removing the exposed film by an ion mill.

After that, a lower gap layer made of Al ₂ O ₃ is formed on the entire surface of the lower shield layer 3, and the laminated film of the lower gap layer and the lower shield layer 3 is patterned into a predetermined shape, and further thereon. Then, the MR element, the intermediate gap layer, the lead-out wiring layer, the upper gap layer, and the like are sequentially laminated.

As a specific example thereof, as shown in FIGS. 10 to 12, a lower gap layer 4 made of an Al ₂ O ₃ film and a NiFeRh film are formed on the lower shield layer 3 after the heat treatment formed as described above. , Ta, a read element laminated portion 5 made of a NiFe film, an intermediate gap layer 6 made of an Al ₂ O ₃ film,
NiFe, FeMn, Ta, W film or CoCrP
Lead wire laminated portion 7 made of t, W, Ta film, Al ₂ O ₃
Upper gap layer 8 made of a film, upper shield layer 9 made of a NiFe film, write gap layer 10 made of an Al ₂ O ₃ film, lower insulating layer 11 made of a thermoset photoresist film, and coil layer 12 made of a Cu film. An upper insulating layer 13 made of a thermally cured photoresist film, an upper magnetic pole layer 14 made of a NiFe film, a terminal raising layer 15 made of a Cu film, a processing protection film made of an Al ₂ O ₃ film (not shown),
A thin film magnetic head is manufactured by sequentially stacking the terminal layers 17 made of an Au film.

[0005]

However, the above-mentioned conventional manufacturing method has the following problems.
That is, each of the above layers, more specifically, the lower shield layer 3
As described above, the side surface of the layer formed into a predetermined pattern by masking a necessary portion with a photoresist after forming a film on the entire surface and then removing an unnecessary portion with an ion mill,
It is a vertical wall that rises at 90 degrees with respect to the plane of the substrate 1.

Then, a number of layers as described above are laminated and arranged above the lower shield layer 3, and when a predetermined layer among them is manufactured, after forming a film on the entire surface like the lower shield layer 3. It is formed by masking with a photoresist having a predetermined pattern and removing unnecessary portions with an ion mill or the like. However, because the vertical wall forms a steep step between the surface of the substrate protective layer 2 and the surface of the lower shield layer 3, when a film should be formed uniformly on the entire surface, a dent occurs at that portion. However, the higher the layer, the greater the degree of the step difference, so that it becomes impossible to form a continuous film. In addition, the read element stacking portion 5
In the case of a very thin layer as described above, the thickness of the film formed on the entire surface is also thin, so that the above-mentioned cavities cannot be absorbed and high quality and high precision cannot be formed.

Further, when forming a very thin film such as an MR layer, the resist used is, for example, about 0.5 μm, which is very thin compared to the thickness of the lower shield layer 3 (about 2 μm). Then, if a resist is applied to the entire surface prior to the formation of the MR layer, the wettability of the resist deteriorates at the rising portions of the side edges of the lower shield layer 3, and not only the resist cannot be uniformly applied but the resist is not partially applied. Holes may be generated. If the portion in which the hole is formed is the portion where the MR layer is not originally formed, the MR film is also formed in the unnecessary portion due to the subsequent sputtering of the MR film, resulting in a defective product, thus lowering the yield. To do.

The present invention has been made in view of the above background, and an object of the present invention is to solve the above problems and to make the side surface of the lower shield layer as gentle as possible or to make the lower shield layer as gentle as possible. It is an object of the present invention to provide a method of manufacturing a thin film magnetic head capable of eliminating a step on the side surface of a layer and forming a subsequent predetermined layer with high accuracy and high quality.

[0009]

In order to achieve the above object, in the method of manufacturing a thin film magnetic head according to the present invention (first invention), a substrate protective layer is formed on the entire surface of the substrate, and the substrate protective layer is formed. A lower shield layer having a predetermined shape is formed at a predetermined position on the surface of the layer, a predetermined material is deposited on the entire surface of the substrate protective layer and the lower shield layer, and the surface is flattened to form the lower shield layer. An auxiliary protective layer having a surface flush with the surface of the shield layer was formed, and then layers having a predetermined pattern were sequentially laminated (claim 1).

Preferably, when forming the lower shield layer on the substrate protective layer, the lower shield layer is formed thicker than a film thickness required for a final product, and the film is formed during the planarization process. At the same time, by removing the upper part of the lower shield layer, the film thicknesses of the lower shield layer and the auxiliary protective layer are formed to desired thicknesses (claim 2).

As another solution (second invention), a substrate protective layer is formed on the entire surface of the substrate, and a hole having substantially the same shape as the lower shield layer is formed at a predetermined portion of the substrate protective layer. Then, by depositing a predetermined material in the hole, a lower shield layer is formed and the substrate surface is processed flat. After that, layers having a predetermined pattern may be sequentially laminated (claim 3).

As still another solution (third invention), a substrate protective layer is formed on the entire surface of the substrate, a lower shield layer film is formed on the entire surface of the substrate protective layer, and the lower portion thereof is formed. A resist having a predetermined shape is formed on the surface of the film for the shield layer by exposure and development, and then the resist is heat-cured to thermally cure the side surface of the resist and the side surface thereof is inclined. While removing the exposed portion, at least a predetermined depth portion is removed from the surface of the portion covered by the tip side of the inclined side surface of the resist, thereby forming a lower shield layer in which the side surface is inclined at a predetermined angle, After that, layers having a predetermined pattern may be sequentially laminated (claim 4).

Then, after the resist is exposed and developed to form a resist having a predetermined pattern, flood exposure is performed again before heat treatment to re-expose at least the entire surface of the resist, and then heat treatment is performed under the same conditions as in claim 4. Even if it is performed, the inclination angle of the side surface of the resist becomes small, and the underlayer shield layer having a smaller inclination angle is formed, which is preferable. Here, the flood exposure refers to an exposure for irradiating the entire surface without using a mask for performing normal patterning.

The operation of each of the above-mentioned inventions will be described. In the first invention, the lower shield layer is formed by a usual method. Therefore, the side surface of the lower shield layer becomes a substantially vertical wall as in the conventional case. Then, a film made of a predetermined material is formed on the entire surface of the substrate protective layer so as to cover the lower shield layer. After that, the formed surface is machined or the like to be planarized to expose the lower shield layer formed previously and to make the exposed surface and the surface of the auxiliary protective layer flush with each other. Therefore, no step is formed on the side surface of the lower shield layer. After that, perform the same processing as before,
A composite magnetic head is manufactured by sequentially forming layers having a predetermined pattern on the lower shield layer. And
Since no step is formed on the side surface of the lower shield layer as described above, each layer including the read element laminated portion of the ultrathin film is formed with high quality and high performance.

In the second invention, after the substrate protective layer is manufactured by the same method as the conventional method, a predetermined hole is formed on the surface of the substrate protective layer, and a predetermined material is deposited in the hole to form a lower layer. Form a shield layer. That is, the lower shield layer is conventionally formed on the substrate protective layer, but the lower shield layer is formed in the substrate protective layer. As a result, the lower shield layer and the surface of the substrate protective layer are flush with each other, and no step is formed on the side surface of the lower shield layer.

On the other hand, in the third invention, as in the conventional case, a predetermined material is formed on the entire upper surface of the substrate protective layer to form a film for the lower shield layer. Then, a resist having a predetermined pattern is formed by exposure and development processing. Conventionally, the exposed portion of the lower shield layer film is removed by an ion mill in this state, but in the present invention, heat treatment is performed prior to that, and the resist is post-baked. Then, the resist is heat-cured and its side surface becomes an inclined surface. After that, an ion mill is performed.

Then, the film for the lower shield layer which is not covered with the resist is scraped and removed from the beginning of the ion mill. Further, since the resist is also gradually removed by the ion mill, the resist may be completely removed before the end of the ion mill at the thin tip portion, and the initially covered lower shield layer film is exposed. Therefore, by continuing the ion mill thereafter, the newly exposed film for the lower shield layer is also abraded by the ion mill. Then, since the side surface of the resist is inclined, it is gradually removed completely from the tip side with the lapse of time, and the lower shield layer film located below is exposed.

Then, the upper surface of the lower shield layer and the upper surface of the substrate protective layer form a smooth continuous surface due to the inclined side surfaces of the lower shield layer, and when each layer is subsequently formed, a large depression is formed on the side surface concerned. It is possible to form a smoothly continuous film over the entire surface without being cut.

When the resist is re-exposed before the heat treatment (post-baking) as in claim 5, the inclination angle of the side surface inclined by the heat treatment becomes smaller. Therefore, the inclination angle of the side surface of the lower shield layer formed by the ion mill performed thereafter becomes smaller.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a method of manufacturing a thin film magnetic head according to the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 shows a first embodiment of the present invention, that is, an essential part of the first invention. As shown in FIG. 3A, an Al ₂ O ₃ film is formed to a thickness of about 18 μm on the entire surface of the substrate 1 made of Al ₂ O ₃ TiC by vacuum sputtering.
A film is formed, and then its surface is planarized by mechanical processing to a film thickness of about 10 μm to form the substrate protective layer 2.

Then, a film 3'for a lower shield layer made of FeN or FeAlSi is formed on the entire surface of the substrate protective layer 2 by a vacuum sputtering method, and a predetermined upper surface thereof is formed by a photolithography technique at a predetermined position. A photoresist 20 having a pattern is formed (FIG. 2B).

Then, by performing ion milling in this state, the lower shield layer film 3'which is not covered with the photoresist 20 is removed.
To form. The shape of the side surface 3a of the lower shield layer 3 is a vertical wall as in the conventional case, as shown in FIG. The steps up to this point are basically the same as the conventional one. However, the film thickness of the lower shield layer 3 is slightly larger than the conventional film thickness, that is, the film thickness required for the final product.

Here, in the present invention, as shown in FIG. 2C, an Al ₂ O ₃ film 21 ′ made of the same material as the substrate protective layer 2 is formed on the entire exposed surface by vacuum sputtering to a thickness of about 10 μm.
m to form a film. Then, a depression 21'a is formed in the vicinity of the side surface of the lower shield layer 3, but the film layer is thick, so that it is not cut, and at least the surface position of the lower shield layer 3 is formed uniformly. That is, the deepest part of the recess 21 ′ a is located above the surface of the lower shield layer 3.

In this state, the surface is machined, and the surface is machined up to the position indicated by the alternate long and short dash line in FIG. 6C (the position where the film thickness of the lower shield layer 3 becomes 2.3 μm). As a result, the lower shield layer 3 and the auxiliary substrate protection layer 21 are formed on the substrate protection layer 2, and the surfaces of the layers 3 and 21 are flush with each other, as shown in FIG. That is, no step is formed on the side surface 3a of the lower shield layer 3.

Thereafter, the same process as in the prior art is performed, and layers having a predetermined pattern are sequentially formed on the lower shield layer 3 to manufacture a composite type magnetic head as shown in FIGS. Then, as described above, the lower shield layer 3
Since no step is formed on the side surface of the above, each layer including the read element laminated portion 5 of the ultrathin film is formed with high quality and high performance. Then, after the formation of each layer, the entire exposed surface is finally covered with a predetermined protective film and the surface is flattened. The protective film is usually the above-mentioned substrate protective layer 2 or auxiliary substrate protective layer 21. Al ₂ O ₃ similar to the above is used. In the conventional thin-film magnetic head, the protective film is located on the surface and the side surface of each layer and therefore also exists on the side surface of the lower shield layer 2. On the other hand, in the present embodiment, the protective film is formed up to the upper surface of the auxiliary substrate protective layer 21 and the protective film formed in the final step is not located on the side surface of the lower shield layer 3, but the auxiliary substrate protective layer made of the same material. Since 21 is located, it exhibits substantially the same function, and the provision of the auxiliary substrate protection layer 21 does not affect the performance in any way. Product characteristics are improved. Since each of the following inventions has the same process, the description thereof will be omitted.

In addition, in the present embodiment, although the manufacturing process of the auxiliary substrate protective layer 21 is increased, the planar processing can be directly applied to the process performed on the protective film formed on the uppermost side, so that the manufacturing equipment is not required. It is not necessary to use a new one, and the conventional one can be used as it is.

FIG. 2 shows a second embodiment of the present invention, that is, an essential part of the second invention. As shown in FIG. 3A, an Al ₂ O ₃ film is formed to a thickness of about 18 μm on the entire surface of the substrate 1 made of Al ₂ O ₃ TiC by vacuum sputtering.
Approximately 10 μm after film formation and then surface polishing
Then, the substrate protection layer 2 is formed. This point is the same as that of the first embodiment.

Here, in this embodiment, as shown in FIG. 1B, a resist 22 having a predetermined pattern is formed on the surface of the substrate protective layer 2 by using a photolithography technique. The resist 22 is patterned so that a portion where a lower shield layer will be formed in a later step becomes a through hole 22a and the substrate protection layer 2 at that portion is exposed.

In this state, wet etching is carried out by immersing in a phosphoric acid solution at about 60 ° C. for a predetermined time. Then, as shown in FIG. 2C, etc., a side surface inclined hole 2a (having a depth of about 2.3 μm) is formed on the surface of the substrate protective layer 2.
Then, after the resist 22 is removed, the entire surface of the substrate protection layer 2 or the same figure (C) is formed so that the lower shield layer film 3'is formed at least in the hole 2a. As shown in D), a lower shield layer film 3'made of a predetermined material is formed on the hole 2a and its periphery.

Next, as shown in FIG. 3E, the lower shield layer film 3'formed by machining other than the holes 2a is removed and planarized. As a result, the film formed in the hole 2a becomes the lower shield layer 3. Therefore, since the substrate protective layer 2 exists on the side surface of the lower shield layer 3, the surfaces of both layers 3 and 2 are flush with each other, and the lower shield layer 3
There is no step on the side of the.

FIG. 3 shows a third embodiment of the present invention, that is, an essential part of the third invention. As shown in FIG. 3A, an Al ₂ O ₃ film is formed to a thickness of about 18 μm on the entire surface of the substrate 1 made of Al ₂ O ₃ TiC by vacuum sputtering.
Approximately 10 μm after film formation and then surface polishing
Then, the substrate protection layer 2 is formed.

Then, a lower shield layer film (FeAlSi is used in this example) 3'made of FeN or FeAlSi is formed on the entire surface of the substrate protective layer 2 by vacuum sputtering, and the upper surface thereof is further formed. A photoresist 23 having a predetermined pattern is formed at a predetermined position by using a photolithography technique (FIG. 3B). The steps up to this point are the same as those in the first embodiment.

Next, heat treatment (post-baking) is performed at a temperature of about 230 ° C. for about 72 minutes to heat cure the resist 23. Then, the side surface 23a of the resist 23 becomes an inclined surface, as shown in FIG. In addition, this side surface 2
The inclination angle θ of 3a is appropriately changed depending on the temperature, time, etc. of the heat treatment, but in the case of the above heat treatment conditions, it is an angle of about 35 degrees.

After that, an ion mill is performed. Then, the lower shield layer film 3 ′ which is not covered with the resist 23.
Is removed from the beginning of the ion mill, but the resist 23 is also gradually removed by the ion mill. Therefore, the resist is completely removed before the end of the ion mill at the end portion where the film thickness is thin, and the lower shield layer film 3'which was initially covered is exposed. As a result, by performing the ion mill continuously thereafter, the newly exposed lower shield layer film 3 ′ is also abraded by the ion mill. Therefore, as shown in FIG. 3D, when the residual resist is removed after the ion mill is finished, the lower shield layer 3 whose side surfaces are inclined at a predetermined angle is formed.

Since the etching rate of the resist 23 is almost the same as that of the lower shield layer film 3'made of FeAlSi, the inclination angle of the side surface 3a of the lower shield layer 3 finally formed by the ion mill is as follows. The angle of inclination is about 30 degrees, which is almost the same as the inclination angle of the resist 23. Therefore, the upper surface of the lower shield layer 3 and the substrate protection layer 2
The upper surface of the lower shield layer 3 is a smooth continuous surface due to the inclined side surface 3a of the lower shield layer 3, and a steep step is not generated on the side surface of the lower shield layer 3. As a result, when each layer is formed thereafter, a smooth continuous film formation can be formed on the entire surface without being greatly depressed or cut at the side surface 3a.

FIG. 4 shows a fourth embodiment of the present invention. This embodiment is basically the same as the third embodiment described above, except that different points are exposed and developed to form a predetermined pattern. After the resist is formed, before the heat treatment, flood exposure is performed again, and at least the entire surface of the resist is re-exposed.

That is, as in FIG. 3A, about 1 Al ₂ O ₃ film is formed on the entire surface of the substrate 1 by the vacuum sputtering method.
8 μm film is formed, then the surface is polished to about 1
The substrate protective layer 2 is formed with a film thickness of 0 μm. afterwards,
A lower shield layer film (FeAlSi is used in this example) 3 ′ made of FeN or FeAlSi is formed on the entire surface of the substrate protection layer 2 by using a vacuum sputtering method, and a photo film is formed at a predetermined position on the upper surface thereof. A photoresist 23 having a predetermined pattern is formed by using a lithography technique (see FIG. 4A). Up to this point, the steps are the same as in the third embodiment.

Next, flood exposure is performed to form the resist 23.
Irradiate the entire surface of. The exposure conditions at this time are the same as the exposure conditions performed during the exposure and development in the previous step. That is,
Whether or not a mask is interposed between the light source and the resist is different. The conditions may of course be changed ((B) in the same figure).

After that, heat treatment (post-baking) is performed under a predetermined temperature condition (specific conditions will be described later), and the resist 2 is formed.
Heat cure 3. Then, the side surface 23a of the resist 23 becomes an inclined surface, as shown in FIG.
The inclination angle θ of the side surface 23a is also appropriately changed depending on the temperature and time of the heat treatment, but if the same as in the third embodiment, the inclination angle becomes small.

After that, an ion mill is performed. Then, the lower shield layer film 3 ′ which is not covered with the resist 23.
Is removed from the beginning of the ion mill, and the resist 23 is gradually removed by the ion mill. Therefore, the resist is completely removed before the end of the ion mill at the end portion where the film thickness is thin, and the lower shield layer film 3'which was initially covered is exposed. As a result, by performing the ion mill continuously thereafter, the newly exposed lower shield layer film 3 ′ is also abraded by the ion mill. Therefore, as shown in FIG. 3D, when the residual resist is removed after the ion mill is finished, the lower shield layer 3 whose side surfaces are inclined at a predetermined angle is formed. Since the inclination angle θ of the resist 23 becomes small as shown in FIG.
The tilt angle of the finally formed lower shield layer 3 is also the third.
The angle is smaller than that of the embodiment.

Next, the correlation between the heat treatment conditions and the inclination angle will be described. Basically, the higher the heating temperature, the smaller the inclination angle. And to prove the effect,
The following experiment was conducted. That is, exposure and development are performed to form a resist pattern 20 having a predetermined shape as shown in FIG. Then, the same pattern is formed by changing the heat treatment conditions, and the cross-sectional step difference measurement (DEKT
AK: trade name).

First, flood exposure was performed for 18 seconds, and post-baking was performed at 190 ° C. for 60 minutes. The result is shown by the solid line in FIG. Then, the region (resist 20
FIG. 7 is an enlarged view of the side surface portion of FIG. On the other hand, post-baking is performed 230 times without performing flood exposure.
C.-72 minutes (a method corresponding to the third embodiment). The results are shown by the broken lines in FIGS. Then, as shown in the figure, it can be seen that the flood angle shown by the solid line has a smaller inclination angle. Observing the tilt angle at this time with a laser microscope, it was about 10 degrees when flood exposure was performed and about 35 degrees when flood exposure was not performed.

Further, in the present embodiment in which flood irradiation is carried out, an experiment in which only temperature conditions are made different is carried out, cross-section level difference measurement and laser microscope observation are carried out by the same method as described above, the tilt angle at that time is converted, and the temperature is converted. The relationship of the inclination angle with respect to is obtained, and the result is shown in FIG. As is clear from the figure, at a temperature higher than 150 ° C., a resist having the same or smaller inclination angle as that not subjected to flood exposure can be formed, and at a temperature higher than 185 ° C., almost no change occurs. The angle converged to about 10 degrees.

[0044]

As described above, in the method of manufacturing a thin film magnetic head according to the present invention, in both the first invention and the second invention, the side of the lower shield layer is flush with the surface thereof. Since there is a protective layer or substrate protective layer and it becomes a flat surface,
No sharp step is formed on the side surface of the lower shield layer. Also,
In the third invention, the side surface of the lower shield layer can be an inclined surface, although it is not a flat surface, and its angle depends on the inclined surface of the post-baked resist. Thereby, the inclination angle of the side surface of the lower shield layer can be finally reduced. And
Flood exposure before heat treatment can further reduce the inclination angle.

As a result, even if a very thin film or resist is formed on the entire surface in the middle of forming a predetermined layer thereafter, a large depression is formed on the side surface of the lower shield layer, It will not be disconnected. Therefore, the subsequent predetermined layer can be formed with high accuracy and high quality.

[Brief description of drawings]

FIG. 1 is a first method of manufacturing a thin film magnetic head according to the present invention.
It is a figure which shows the principal part of embodiment of this.

FIG. 2 is a second method of manufacturing a thin film magnetic head according to the present invention.
It is a figure which shows the principal part of embodiment of this.

FIG. 3 is a third method of manufacturing a thin film magnetic head according to the invention.
It is a figure which shows the principal part of embodiment of this.

FIG. 4 is a fourth method of manufacturing a thin film magnetic head according to the invention.
It is a figure which shows the principal part of embodiment of this.

FIG. 5 is a diagram for demonstrating the effect of the fourth embodiment.

FIG. 6 is a diagram for demonstrating the effect of the fourth embodiment.

FIG. 7 is a diagram for demonstrating the effect of the fourth embodiment.

FIG. 8 is a diagram for demonstrating the effect of the fourth embodiment.

FIG. 9 is an explanatory diagram showing a conventional method.

FIG. 10 is a part of an exploded perspective view showing an example of an MR type composite head manufactured by the present invention and a conventional manufacturing method.

FIG. 11 is a part of an exploded perspective view showing an example of an MR type composite head manufactured by the present invention and a conventional manufacturing method.

FIG. 12 is a sectional view showing an example of an MR type composite head manufactured by the present invention and a conventional manufacturing method.

[Explanation of symbols]

 1 substrate 2 substrate protection layer 3 lower shield layer

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Hirofumi Mochizuki 5-36-1 Shimbashi, Minato-ku, Tokyo Fuji Electric Chemical Co., Ltd. (72) Toshiharu Suzuki 5-36-11 Shinbashi, Minato-ku, Tokyo Fuji Inside Denki Kagaku Co., Ltd. (72) Inventor Toshiyuki Kuroko 5-36-1 Shimbashi, Minato-ku, Tokyo Inside Fuji Electric Kagaku Co., Ltd.

Claims (5)

[Claims] 1. A substrate protective layer is formed on the entire surface of a substrate, a lower shield layer having a predetermined shape is formed at a predetermined position on the surface of the substrate protective layer, and the substrate protective layer and the lower shield layer are covered.
A predetermined material is deposited on the entire surface, and the surface is flattened to form an auxiliary protective layer having a surface flush with the surface of the lower shield layer, and then layers having a predetermined pattern are sequentially laminated. A method of manufacturing a thin-film magnetic head, characterized in that. 2. When the lower shield layer is formed on the substrate protective layer, the lower shield layer is formed thicker than a film thickness required for a final product, and the film is formed together with the film during the planarization process. 2. The method of manufacturing a thin-film magnetic head according to claim 1, wherein the lower shield layer and the auxiliary protective layer are formed to have desired film thicknesses by removing an upper portion of the lower shield layer. 3. A substrate protective layer is formed on the entire surface of the substrate, a hole having substantially the same shape as the lower shield layer is formed in a predetermined portion of the substrate protective layer, and then a predetermined material is formed in the hole. Thus, a lower shield layer is formed, the surface of the substrate is processed flat, and then layers of a predetermined pattern are sequentially laminated to form a thin-film magnetic head. 4. A substrate protective layer is formed on the entire surface of the substrate, a film for the lower shield layer is formed on the entire surface of the substrate protective layer, and the surface of the film for the lower shield layer is exposed and developed to a predetermined extent. Form a resist, and then heat-treat the resist to heat it to incline its side surface, and in that state, remove the exposed portion of the lower shield layer film by an ion mill, and at least incline the resist. By removing a predetermined depth portion from the surface of the portion covered by the tip side of the side surface, a lower shield layer whose side surface is inclined at a predetermined angle is formed, and then layers having a predetermined pattern are sequentially laminated. A method of manufacturing a thin-film magnetic head, characterized in that. 5. A substrate protective layer is formed on the entire surface of the substrate, a film for the lower shield layer is formed on the entire surface of the substrate protective layer, and the surface of the film for the lower shield layer is subjected to predetermined exposure and development. After forming a resist in a shape, after development, at least the entire surface of the resist is exposed again, and then heat treatment is performed to thermally cure the resist to incline its side surface, and in that state, the lower part is formed by an ion mill. By removing the exposed portion of the shield layer film and at least removing a predetermined depth portion from the surface of the portion covered by the tip side of the inclined side surface of the resist, the lower shield whose side surface is inclined at a predetermined angle is formed. A method of manufacturing a thin-film magnetic head, wherein layers are formed, and then layers having a predetermined pattern are sequentially laminated.