JPH08113708A - Photosensitive polymer composition - Google Patents
Photosensitive polymer compositionInfo
- Publication number
- JPH08113708A JPH08113708A JP27845394A JP27845394A JPH08113708A JP H08113708 A JPH08113708 A JP H08113708A JP 27845394 A JP27845394 A JP 27845394A JP 27845394 A JP27845394 A JP 27845394A JP H08113708 A JPH08113708 A JP H08113708A
- Authority
- JP
- Japan
- Prior art keywords
- group
- general formula
- following general
- polyamic acid
- bis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 38
- 229920000642 polymer Polymers 0.000 title claims abstract description 24
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 40
- -1 amine compound Chemical class 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical class O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 125000003118 aryl group Chemical group 0.000 claims abstract description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 6
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 5
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 4
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 125000000962 organic group Chemical group 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000002798 polar solvent Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 125000000852 azido group Chemical group *N=[N+]=[N-] 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 17
- 229920005989 resin Polymers 0.000 abstract description 17
- 238000000059 patterning Methods 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 238000002156 mixing Methods 0.000 abstract description 5
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001588 bifunctional effect Effects 0.000 abstract 2
- 230000007774 longterm Effects 0.000 abstract 1
- 238000004321 preservation Methods 0.000 abstract 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 22
- 229920001721 polyimide Polymers 0.000 description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 230000018109 developmental process Effects 0.000 description 15
- PXQPEWDEAKTCGB-UHFFFAOYSA-N orotic acid Chemical compound OC(=O)C1=CC(=O)NC(=O)N1 PXQPEWDEAKTCGB-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 229960005010 orotic acid Drugs 0.000 description 7
- 239000009719 polyimide resin Substances 0.000 description 7
- MLIWQXBKMZNZNF-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical group C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- HJSYPLCSZPEDCQ-UHFFFAOYSA-N 5-[2-(3-amino-4-methylphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-methylaniline Chemical compound C1=C(N)C(C)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C)C(N)=C1 HJSYPLCSZPEDCQ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- YFOOEYJGMMJJLS-UHFFFAOYSA-N 1,8-diaminonaphthalene Chemical compound C1=CC(N)=C2C(N)=CC=CC2=C1 YFOOEYJGMMJJLS-UHFFFAOYSA-N 0.000 description 1
- MPXKIFWZOQVOLN-UHFFFAOYSA-N 1-(1-adamantyl)adamantane Chemical compound C1C(C2)CC(C3)CC2CC13C(C1)(C2)CC3CC2CC1C3 MPXKIFWZOQVOLN-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- BAHPQISAXRFLCL-UHFFFAOYSA-N 2,4-Diaminoanisole Chemical compound COC1=CC=C(N)C=C1N BAHPQISAXRFLCL-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- UONVFNLDGRWLKF-UHFFFAOYSA-N 2,5-diaminobenzoic acid Chemical compound NC1=CC=C(N)C(C(O)=O)=C1 UONVFNLDGRWLKF-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- FNJYNTJIZBHPGP-UHFFFAOYSA-N 2,5-dichlorobenzene-1,3-diamine Chemical compound NC1=CC(Cl)=CC(N)=C1Cl FNJYNTJIZBHPGP-UHFFFAOYSA-N 0.000 description 1
- QAYVHDDEMLNVMO-UHFFFAOYSA-N 2,5-dichlorobenzene-1,4-diamine Chemical compound NC1=CC(Cl)=C(N)C=C1Cl QAYVHDDEMLNVMO-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- JONTXEXBTWSUKE-UHFFFAOYSA-N 2-(2-aminoethylsulfanyl)ethanamine Chemical compound NCCSCCN JONTXEXBTWSUKE-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- KNRVAYVZVIKHHL-UHFFFAOYSA-N 2-methoxy-5-methylbenzene-1,4-diamine Chemical compound COC1=CC(N)=C(C)C=C1N KNRVAYVZVIKHHL-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- BCKLPBBBFNWJHH-UHFFFAOYSA-N 2-methylnaphthalene-1,4-diamine Chemical compound C1=CC=CC2=C(N)C(C)=CC(N)=C21 BCKLPBBBFNWJHH-UHFFFAOYSA-N 0.000 description 1
- AWCQGTAMYBFTTN-UHFFFAOYSA-N 2-methylnaphthalene-1,5-diamine Chemical compound NC1=CC=CC2=C(N)C(C)=CC=C21 AWCQGTAMYBFTTN-UHFFFAOYSA-N 0.000 description 1
- IJTBLNVJSBGHPF-UHFFFAOYSA-N 2-phenylnaphthalene-1,3-diamine Chemical compound NC1=CC2=CC=CC=C2C(N)=C1C1=CC=CC=C1 IJTBLNVJSBGHPF-UHFFFAOYSA-N 0.000 description 1
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical group C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- MHQULXYNBKWNDF-UHFFFAOYSA-N 3,4-dimethylbenzene-1,2-diamine Chemical compound CC1=CC=C(N)C(N)=C1C MHQULXYNBKWNDF-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RHRNYXVSZLSRRP-UHFFFAOYSA-N 3-(carboxymethyl)cyclopentane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CC1C(C(O)=O)CC(C(O)=O)C1C(O)=O RHRNYXVSZLSRRP-UHFFFAOYSA-N 0.000 description 1
- UFQHFMGRRVQFNA-UHFFFAOYSA-N 3-(dimethylamino)propyl prop-2-enoate Chemical compound CN(C)CCCOC(=O)C=C UFQHFMGRRVQFNA-UHFFFAOYSA-N 0.000 description 1
- TYKLCAKICHXQNE-UHFFFAOYSA-N 3-[(2,3-dicarboxyphenyl)methyl]phthalic acid Chemical compound OC(=O)C1=CC=CC(CC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O TYKLCAKICHXQNE-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- DOAYUKLNEKRLCQ-UHFFFAOYSA-N 3-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=CC(N)=C1 DOAYUKLNEKRLCQ-UHFFFAOYSA-N 0.000 description 1
- SPXABFZECXRZBT-UHFFFAOYSA-N 3-[3-(3-aminophenyl)-1,1,2,2,3,3-hexafluoropropyl]aniline Chemical compound NC1=CC=CC(C(F)(F)C(F)(F)C(F)(F)C=2C=C(N)C=CC=2)=C1 SPXABFZECXRZBT-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- ZRJAHFLFCRNNMR-UHFFFAOYSA-N 3-amino-2-(4-aminophenyl)benzoic acid Chemical compound C1=CC(N)=CC=C1C1=C(N)C=CC=C1C(O)=O ZRJAHFLFCRNNMR-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- DCSSXQMBIGEQGN-UHFFFAOYSA-N 4,6-dimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C=C1N DCSSXQMBIGEQGN-UHFFFAOYSA-N 0.000 description 1
- SQNMHJHUPDEXMS-UHFFFAOYSA-N 4-(1,2-dicarboxyethyl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=C2C(C(CC(=O)O)C(O)=O)CC(C(O)=O)C(C(O)=O)C2=C1 SQNMHJHUPDEXMS-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- BKQWDTFZUNGWNV-UHFFFAOYSA-N 4-(3,4-dicarboxycyclohexyl)cyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1C1CC(C(O)=O)C(C(O)=O)CC1 BKQWDTFZUNGWNV-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- FPNXMUZTKHUSRQ-UHFFFAOYSA-N 4-(4-amino-4-methylcyclohexa-1,5-dien-1-yl)-2-methylaniline Chemical group C1=C(N)C(C)=CC(C=2C=CC(C)(N)CC=2)=C1 FPNXMUZTKHUSRQ-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- OSGFBINRYVUILV-UHFFFAOYSA-N 4-[(4-aminophenyl)-diethylsilyl]aniline Chemical compound C=1C=C(N)C=CC=1[Si](CC)(CC)C1=CC=C(N)C=C1 OSGFBINRYVUILV-UHFFFAOYSA-N 0.000 description 1
- BLMSGSGJGUHKFW-UHFFFAOYSA-N 4-[(4-aminophenyl)-diphenylsilyl]aniline Chemical compound C1=CC(N)=CC=C1[Si](C=1C=CC(N)=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BLMSGSGJGUHKFW-UHFFFAOYSA-N 0.000 description 1
- NMLVVZNIIWJNTI-UHFFFAOYSA-N 4-[(4-aminophenyl)-ethylphosphoryl]aniline Chemical compound C=1C=C(N)C=CC=1P(=O)(CC)C1=CC=C(N)C=C1 NMLVVZNIIWJNTI-UHFFFAOYSA-N 0.000 description 1
- KTZLSMUPEJXXBO-UHFFFAOYSA-N 4-[(4-aminophenyl)-phenylphosphoryl]aniline Chemical compound C1=CC(N)=CC=C1P(=O)(C=1C=CC(N)=CC=1)C1=CC=CC=C1 KTZLSMUPEJXXBO-UHFFFAOYSA-N 0.000 description 1
- XESBFJAZUUSMGS-UHFFFAOYSA-N 4-[1-(4-aminophenyl)-2,2,2-trifluoro-1-phenylethyl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C=1C=CC(N)=CC=1)C1=CC=CC=C1 XESBFJAZUUSMGS-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- ASNOFHCTUSIHOM-UHFFFAOYSA-N 4-[10-(4-aminophenyl)anthracen-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N)C=C1 ASNOFHCTUSIHOM-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- UHNUHZHQLCGZDA-UHFFFAOYSA-N 4-[2-(4-aminophenyl)ethyl]aniline Chemical compound C1=CC(N)=CC=C1CCC1=CC=C(N)C=C1 UHNUHZHQLCGZDA-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- BMIUMBLWVWZIHD-UHFFFAOYSA-N 4-[3-(4-aminophenyl)propyl]aniline Chemical compound C1=CC(N)=CC=C1CCCC1=CC=C(N)C=C1 BMIUMBLWVWZIHD-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HWEMDPIPVVFWCB-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]-2,2,2-trifluoro-1-phenylethyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC=CC=2)(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C(F)(F)F)C=C1 HWEMDPIPVVFWCB-UHFFFAOYSA-N 0.000 description 1
- IOUVQFAYPGDXFG-UHFFFAOYSA-N 4-[4-[2-[4-(3,4-dicarboxyphenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=C(C(C(O)=O)=CC=3)C(O)=O)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 IOUVQFAYPGDXFG-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- HWKHQQCBFMYAJZ-UHFFFAOYSA-N 4-amino-n-(3-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1C(=O)NC1=CC=CC(N)=C1 HWKHQQCBFMYAJZ-UHFFFAOYSA-N 0.000 description 1
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 1
- LBNFPUAJWZYIOQ-UHFFFAOYSA-N 4-n-(4-aminophenyl)-4-n-methylbenzene-1,4-diamine Chemical compound C=1C=C(N)C=CC=1N(C)C1=CC=C(N)C=C1 LBNFPUAJWZYIOQ-UHFFFAOYSA-N 0.000 description 1
- YFBMJEBQWQBRQJ-UHFFFAOYSA-N 4-n-(4-aminophenyl)-4-n-phenylbenzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1N(C=1C=CC(N)=CC=1)C1=CC=CC=C1 YFBMJEBQWQBRQJ-UHFFFAOYSA-N 0.000 description 1
- BWBOGCDVWRKHOK-UHFFFAOYSA-N 5-[4-(4-amino-2-methoxypentyl)phenyl]-4-methoxypentan-2-amine Chemical compound CC(N)CC(OC)CC1=CC=C(CC(CC(C)N)OC)C=C1 BWBOGCDVWRKHOK-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- LVNDUJYMLJDECN-UHFFFAOYSA-N 5-methylbenzene-1,3-diamine Chemical compound CC1=CC(N)=CC(N)=C1 LVNDUJYMLJDECN-UHFFFAOYSA-N 0.000 description 1
- DQFBYFPFKXHELB-UHFFFAOYSA-N Chalcone Natural products C=1C=CC=CC=1C(=O)C=CC1=CC=CC=C1 DQFBYFPFKXHELB-UHFFFAOYSA-N 0.000 description 1
- QCUILKXHNQWXPR-UHFFFAOYSA-N ClC1(C(OC2=CC=C(C=C2)C(C(F)(F)F)(C(F)(F)F)C2=CC=C(C=C2)OC2C(C=CC=C2)(Cl)C2=CC=C(C=C2)N)C=CC=C1)C1=CC=C(C=C1)N Chemical compound ClC1(C(OC2=CC=C(C=C2)C(C(F)(F)F)(C(F)(F)F)C2=CC=C(C=C2)OC2C(C=CC=C2)(Cl)C2=CC=C(C=C2)N)C=CC=C1)C1=CC=C(C=C1)N QCUILKXHNQWXPR-UHFFFAOYSA-N 0.000 description 1
- ZPAKUZKMGJJMAA-UHFFFAOYSA-N Cyclohexane-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)CC1C(O)=O ZPAKUZKMGJJMAA-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- GWGJRTPEWKEJGD-UHFFFAOYSA-N NC=1C=C(C=CC1)C(=CC#C)C1=CC(=CC=C1)N Chemical compound NC=1C=C(C=CC1)C(=CC#C)C1=CC(=CC=C1)N GWGJRTPEWKEJGD-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- IUHFWCGCSVTMPG-UHFFFAOYSA-N [C].[C] Chemical class [C].[C] IUHFWCGCSVTMPG-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- FOLJMFFBEKONJP-UHFFFAOYSA-N adamantane-1,3-diamine Chemical compound C1C(C2)CC3CC1(N)CC2(N)C3 FOLJMFFBEKONJP-UHFFFAOYSA-N 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- SOGAXMICEFXMKE-UHFFFAOYSA-N alpha-Methyl-n-butyl acrylate Natural products CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- TUQQUUXMCKXGDI-UHFFFAOYSA-N bis(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C=CC=2)=C1 TUQQUUXMCKXGDI-UHFFFAOYSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 235000005513 chalcones Nutrition 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- JHIVVAPYMSGYDF-PTQBSOBMSA-N cyclohexanone Chemical class O=[13C]1CCCCC1 JHIVVAPYMSGYDF-PTQBSOBMSA-N 0.000 description 1
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007033 dehydrochlorination reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- UUTDWTOZAWFKFW-UHFFFAOYSA-N methyl 2,4-dioxo-1h-pyrimidine-6-carboxylate Chemical compound COC(=O)C1=CC(=O)NC(=O)N1 UUTDWTOZAWFKFW-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- OKBVMLGZPNDWJK-UHFFFAOYSA-N naphthalene-1,4-diamine Chemical compound C1=CC=C2C(N)=CC=C(N)C2=C1 OKBVMLGZPNDWJK-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- WSKHYOXDVZCOJP-UHFFFAOYSA-N naphthalene-1,6-diamine Chemical compound NC1=CC=CC2=CC(N)=CC=C21 WSKHYOXDVZCOJP-UHFFFAOYSA-N 0.000 description 1
- ZDWYJINCYGEEJB-UHFFFAOYSA-N naphthalene-1,7-diamine Chemical compound C1=CC=C(N)C2=CC(N)=CC=C21 ZDWYJINCYGEEJB-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- XTBLDMQMUSHDEN-UHFFFAOYSA-N naphthalene-2,3-diamine Chemical compound C1=CC=C2C=C(N)C(N)=CC2=C1 XTBLDMQMUSHDEN-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- RNVCVTLRINQCPJ-UHFFFAOYSA-N ortho-methyl aniline Natural products CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical group C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- ABYXFACYSGVHCW-UHFFFAOYSA-N pyridine-3,5-diamine Chemical compound NC1=CN=CC(N)=C1 ABYXFACYSGVHCW-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、高感度、高解像性に優
れ、安定したパターン形成可能な感光性重合体組成物及
びそれを用いたパターン形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive polymer composition which is highly sensitive and has high resolution and is capable of stable pattern formation, and a pattern forming method using the same.
【0002】[0002]
【従来の技術】従来から、耐熱性高分子となる感光性重
合体組成物して、その成分のポリイミド樹脂の前駆体で
あるポリアミック酸に、化学線により二量化又は重合
可能な炭素−炭素二重結合、アミノ基またはその四級化
塩を含む化合物をイオン結合を介して導入した組成物
(特公昭 54-145794号公報)、その組成物に光架橋剤
としてビスアジド化合物を配合した組成物(特公昭 57-
168942号公報)、ポリアミック酸のカルボキシル基に
エステル結合で感光性基を導入した組成物(特公昭55-3
0207号、特公昭55-41422号各公報)等が提案されてい
る。2. Description of the Related Art Conventionally, a photosensitive polymer composition which is a heat-resistant polymer has been prepared by adding a carbon-carbon dimer which can be dimerized or polymerized by actinic radiation to polyamic acid which is a precursor of a polyimide resin as a component thereof. A composition in which a compound containing a heavy bond, an amino group or a quaternized salt thereof is introduced through an ionic bond (JP-B-54-145794), and a composition containing a bisazide compound as a photocrosslinking agent ( Japanese Patent Publication 57-
168942), a composition in which a photosensitive group is introduced into the carboxyl group of polyamic acid by an ester bond (Japanese Patent Publication No. 55-3).
No. 0207, Japanese Patent Publication No. 55-41422) and the like are proposed.
【0003】[0003]
【発明が解決しようとする課題】しかし、の組成物で
パターン形成するには大量の化学線露光量が必要であ
り、実用に供するには感度が低く、およびの組成物
ではポリアミック酸膜形成後に長時間放置すると、ポリ
アミック酸膜が吸湿して溶解性が低下するため安定した
パターニングが形成できない。また、同様に長時間放置
したポリアミック酸膜を一般的な非プロトン性極性溶
剤、例えばN−メチル-2−ピロリドン等による現像の場
合、現像時にポリアミック酸膜上全面に樹脂クラックが
発生するため、実用化に際してはパターニング形成プロ
セス上、大きな制約があった。即ち、およびの組成
物では基板上にポリアミック酸を塗布してからパターン
形成するまでを、数時間で完結させなければならないと
いう欠点がある。However, a large amount of actinic radiation exposure is required to form a pattern with the composition (1), and the sensitivity is low for practical use, and the composition (1) has a low sensitivity after the polyamic acid film is formed. If it is left for a long time, the polyamic acid film absorbs moisture and its solubility is lowered, so that stable patterning cannot be formed. Similarly, in the case of developing a polyamic acid film left for a long time with a general aprotic polar solvent such as N-methyl-2-pyrrolidone, resin cracks are generated on the entire surface of the polyamic acid film during development, In practical application, there were great restrictions on the patterning formation process. That is, the compositions (1) and (2) have the drawback that it is necessary to complete the process from application of the polyamic acid on the substrate to pattern formation in several hours.
【0004】また、の組成物では現像時に露光部のポ
リイミド樹脂が溶出し高精度のパターニングが形成され
ないという欠点があり、樹脂そのものの製造工程が複雑
であるばかりでなく、感光基を導入する段階で脱塩酸反
応を伴うために、得られる最終ポリイミド樹脂膜中に塩
素イオンが残り、電気特性やこの樹脂を使用した素子の
信頼性が悪いという欠点があった。In addition, the composition (1) has the drawback that the polyimide resin in the exposed area is eluted during development and high-precision patterning is not formed, which not only complicates the manufacturing process of the resin itself, but also introduces a photosensitive group. However, there is a drawback that chlorine ions remain in the final polyimide resin film obtained due to the dehydrochlorination reaction, and the electrical characteristics and the reliability of the device using this resin are poor.
【0005】本発明は、上記の欠点を解消するためにな
されたもので、高感度、高解像度で、ポリアミド酸膜形
成後、長時間放置によるポリアミック酸の吸湿による溶
解性の低下や、現像時の樹脂クラックの発生がなく、極
めて安定したパターニング形成能を持った高耐熱性の感
光性重合体組成物およびそれを用いた信頼性の高いパタ
ーニングの形成方法を提供しようとするものである。The present invention has been made in order to solve the above-mentioned drawbacks and has a high sensitivity and a high resolution, and after the formation of the polyamic acid film, the solubility of the polyamic acid is lowered due to the absorption of moisture of the polyamic acid after being left for a long time, and at the time of development. The present invention aims to provide a highly heat-resistant photosensitive polymer composition which does not generate resin cracks and has an extremely stable patterning forming ability, and a highly reliable patterning forming method using the same.
【0006】[0006]
【課題を解決するための手段】本発明者らは、上記の目
的を達成しようと鋭意研究を進めた結果、後述の樹脂組
成物を用いることによって、上記目的を達成できること
を見いだし、本発明を完成したものである。Means for Solving the Problems The present inventors have made intensive studies to achieve the above object, and as a result, have found that the above object can be achieved by using a resin composition described later. It is completed.
【0007】即ち、本発明は、 (A)次の一般式で示されるポリアミック酸、That is, the present invention provides (A) a polyamic acid represented by the following general formula:
【0008】[0008]
【化9】 (但し、式中R1 は 4価の芳香族基を、R2 は 2価の芳
香族基をそれぞれ表す) (B)次の一般式で示されるウラシル誘導体、[Chemical 9] (However, in the formula, R 1 represents a tetravalent aromatic group and R 2 represents a divalent aromatic group.) (B) A uracil derivative represented by the following general formula:
【0009】[0009]
【化10】 (但し、式中R3 は−H、−CH3 、−COOH、−C
OOCH3 を表す) (C)次の一般式で示されるビスアジド化合物および[Chemical 10] (However, in the formula, R 3 is —H, —CH 3 , —COOH, —C
OOCH 3 represents a) (C) azido compounds represented by the following general formula and
【0010】[0010]
【化11】N3 −R4 −N3 (但し、式中R4 は 2価又は 3価の有機基を表す) (D)次の一般式で示されるアミン化合物Embedded image N 3 —R 4 —N 3 (wherein R 4 represents a divalent or trivalent organic group) (D) An amine compound represented by the following general formula
【0011】[0011]
【化12】 (但し、式中R5 、R6 、R7 は、水素、低級アルキル
基、フェニル基又は低級アルケニル基を、R8 はアルキ
レン基を表し、これらは同一又は異なってもよい)を必
須成分としてなることを特徴とする感光性重合体組成物
である。また、この感光性重合体組成物を、基板上に塗
布、乾燥して得た感光基材に活性光線を照射して露光し
た後、加熱処理を行い、次いで未露光部を非プロトン性
極性溶剤で溶解除去することを特徴とするパターン形成
方法である。[Chemical 12] (Wherein R 5 , R 6 , and R 7 represent hydrogen, a lower alkyl group, a phenyl group, or a lower alkenyl group, and R 8 represents an alkylene group, which may be the same or different) It is a photosensitive polymer composition characterized by the following. Further, this photosensitive polymer composition is applied on a substrate and dried to expose a photosensitive substrate obtained by irradiating with an actinic ray, followed by heat treatment, and then the unexposed portion is subjected to an aprotic polar solvent. It is a pattern forming method characterized by dissolving and removing with.
【0012】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【0013】本発明に用いる(A)ポリアミック酸とし
ては、酸成分とジアミン成分の反応によって得られる、
前記の一般式化9で示されるものである。一般式の繰返
し単位、もしくは他の繰返し単位、他の繰返し単位との
共重合体であってもよい。これらの酸成分とジアミン成
分の組合せは最終硬化後のポリイミド膜の耐熱性、機械
的特性、電気的特性等を考慮して選択することが望まし
い。The (A) polyamic acid used in the present invention is obtained by the reaction of an acid component and a diamine component.
This is represented by the above general formula 9. It may be a repeating unit of the general formula, or another repeating unit, or a copolymer with another repeating unit. It is desirable to select the combination of these acid component and diamine component in consideration of heat resistance, mechanical properties, electrical properties, etc. of the polyimide film after final curing.
【0014】ポリアミック酸の酸成分としては例えば、
ピロメリット酸、1,2,3,4-ベンゼンテトラカルボン酸、
1,2,3,4-シクロブタンテトラカルボン酸、1,2,4,5-シク
ロペンタンテトラカルボン酸、1,2,4,5-シクロヘキサン
テトラカルボン酸、 3,3′,4,4′−ビシクロヘキシルテ
トラカルボン酸、2,3,5-トリカルボキシシクロペンチル
酢酸、3,4-ジカルボキシ-1,2,3,4- テトラヒドロナフタ
レン-1- コハク酸、 3,3′,4,4′−ビフェニルテトラカ
ルボン酸、 2,3,3′,4′−ビフェニルテトラカルボン
酸、 3,3′,4,4′−ベンゾフェノンテトラカルボン酸、
2,3,3′,4′−ベンゾフェノンテトラカルボン酸、 3,
3′,4,4′−ビフェニルエーテルテトラカルボン酸(4,4
′- オキシジフタル酸)、 2,3,3′,4′−ビフェニル
エーテルテトラカルボン酸、2,2-ビス(3,4-ジカルボキ
シフェニル)プロパン、2,2-ビス(2,3-ジカルボキシフ
ェニル)プロパン、ビス(3,4-ジカルボキシフェニル)
メタン、ビス(2,3-ジカルボキシフェニル)メタン、1,
1-ビス(2,3-ジカルボキシフェニル)エタン、 2,2−ビ
ス(3,4-ジカルボキシフェニル)ヘキサフルオロプロパ
ン、 3,3′,4,4′−ジフェニルスルホンテトラカルボン
酸、 2,3,3′,4′−ジフェニルスルホンテトラカルボン
酸、2,3,6,7-ナフタレンテトラカルボン酸、1,4,5,8-ナ
フタレンテトラカルボン酸、1,2,5,6-ナフタレンテトラ
カルボン酸、 3,4,9,10-テトラカルボキシペリレン、2,
2-ビス[4-(3,4-ジカルボキシフェノキシ)フェニル]
プロパン、2,2-ビス[4-(3,4-ジカルボキシフェノキ
シ)フェニル]ヘキサフルオロプロパン等の無水物又は
その低級アルキルエステル等が挙げられ、これらは単独
又は混合して使用することかができる。Examples of the acid component of polyamic acid include
Pyromellitic acid, 1,2,3,4-benzenetetracarboxylic acid,
1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,4,5-cyclopentanetetracarboxylic acid, 1,2,4,5-cyclohexanetetracarboxylic acid, 3,3 ′, 4,4′- Bicyclohexyl tetracarboxylic acid, 2,3,5-tricarboxycyclopentyl acetic acid, 3,4-dicarboxy-1,2,3,4-tetrahydronaphthalene-1-succinic acid, 3,3 ', 4,4'- Biphenyl tetracarboxylic acid, 2,3,3 ', 4'-biphenyl tetracarboxylic acid, 3,3', 4,4'-benzophenone tetracarboxylic acid,
2,3,3 ', 4'-benzophenone tetracarboxylic acid, 3,
3 ', 4,4'-biphenyl ether tetracarboxylic acid (4,4
′ -Oxydiphthalic acid), 2,3,3 ′, 4′-biphenyl ether tetracarboxylic acid, 2,2-bis (3,4-dicarboxyphenyl) propane, 2,2-bis (2,3-dicarboxy) Phenyl) propane, bis (3,4-dicarboxyphenyl)
Methane, bis (2,3-dicarboxyphenyl) methane, 1,
1-bis (2,3-dicarboxyphenyl) ethane, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane, 3,3 ′, 4,4′-diphenylsulfone tetracarboxylic acid, 2, 3,3 ', 4'-diphenylsulfone tetracarboxylic acid, 2,3,6,7-naphthalene tetracarboxylic acid, 1,4,5,8-naphthalene tetracarboxylic acid, 1,2,5,6-naphthalene tetracarboxylic acid Carboxylic acid, 3,4,9,10-tetracarboxyperylene, 2,
2-bis [4- (3,4-dicarboxyphenoxy) phenyl]
Examples thereof include anhydrides such as propane and 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane, or lower alkyl esters thereof. These may be used alone or as a mixture. it can.
【0015】ポリアミック酸のジアミン成分としては、
例えば、 4,4′−ジアミノジフェニルメタン、 3,3′−
ジメチル-4,4′−ジアミノジフェニルメタン、 3,3′,
5,5′−テトラメチル-4,4′−ジアミノジフェニルメタ
ン、 3,3′,5,5′−テトラエチル-4,4′−ジアミノジフ
ェニルメタン、 3,3′−ジメチル-5,5′−ジエチル-4,
4′−ジアミノジフェニルメタン、 4,4′−メチレンビ
ス(シクロヘキシルアミン)、 3,3′−ジメチル-4,4′
−ジアミノジシクロヘキシルメタン、 3,3′−ジメトキ
シ-4,4′−ジアミノジフェニルメタン、 3,3′−ジエト
キシ-4,4′−ジアミノジフェニルメタン、ビス(3-アミ
ノフェニル)エーテル、ビス(4-アミノフェニル)エー
テル、 3,4′−ジアミノジフェニルエーテル、 3,3′−
ジエチル-4,4′−ジアミノジフェニルエーテル、 3,3′
−ジメトキシ-4,4′−ジアミノジフェニルエーテル、ビ
ス[4-(4-アミノフェノキシ)フェニル]エーテル、
3,3′−ジメチル-4,4′−ジアミノジフェニルスルホ
ン、 3,3′−ジエチル-4,4′−ジアミノジフェニルスル
ホン、 3,3′−ジメトキシ-4,4′−ジアミノジフェニル
スルホン、 3,3′−ジエトキシ-4,4′−ジアミノジフェ
ニルスルホン、 3,3′−ジメチル-4,4′−ジアミノジフ
ェニルプロパン、 3,3′−ジエチル-4,4′−ジアミノジ
フェニルプロパン、 3,3′−ジメトキシ-4,4′−ジアミ
ノジフェニルプロパン、 3,3′−ジエトキシ-4,4′−ジ
アミノジフェニルプロパン、2,2-ビス[4-(4-アミノフ
ェノキシ)フェニル]プロパン、1,3-ビス(4-アミノフ
ェニル)プロパン、2,2-ビス(4-アミノフェニル)プロ
パン、 4,4′−ジアミノジフェニルスルフィド、 3,3′
−ジメチル-4,4′−ジアミノジフェニルスルフィド、
3,3′−ジエチル-4,4′−ジアミノジフェニルスルフィ
ド、 3,3′−ジメトキシ-4,4′−ジアミノジフェニルス
ルフィド、 3,3′−ジエトキシ-4,4′−ジアミノジフェ
ニルスルフィド、 2,2′−ジアミノジエチルスルフィ
ド、 2,4′−ジアミノジフェニルスルフィド、m-フェニ
レンジアミン、p-フェニレンジアミン、1,3-ビス(4-ア
ミノフェノキシ)ベンゼン、1,2-ビス(4-アミノフェニ
ル)エタン、1,1-ビス(4-アミノフェニル)エタン、ビ
ス(3-アミノフェニル)スルホン、ビス(4-アミノフェ
ニル)スルホン、o-トルイジンスルホン、ビス[4-(4-
アミノフェノキシ)フェニル]スルホン、ビス[4-(3-
アミノフェノキシ)フェニル]スルホン、4,4′−ジア
ミノジベンジルスルホキシド、ビス(4-アミノフェニ
ル)ジエチルシラン、ビス(4-アミノフェニル)ジフェ
ニルシラン、ビス(4-アミノフェニル)エチルホスフィ
ンオキシド、ビス(4-アミノフェニル)フェニルホスフ
ィンオキシド、ビス(4-アミノフェニル)−N−フェニ
ルアミン、ビス(4-アミノフェニル)−N−メチルアミ
ン、1,2-ジアミノナフタレン、1,4-ジアミノナフタレ
ン、1,5-ジアミノナフタレン、1,6-ジアミノナフタレ
ン、1,7-ジアミノナフタレン、1,8-ジアミノナフタレ
ン、2,3-ジアミノナフタレン、2,6-ジアミノナフタレ
ン、1,4-ジアミノ-2−メチルナフタレン、1,5-ジアミノ
-2−メチルナフタレン、1,3-ジアミノ-2−フェニルナフ
タレン、9,9-ビス(4-アミノフェニル)フルオレン、
4,4′−ジアミノビフェニル、 3,3′−ジアミノビフェ
ニル、 3,3′−ジヒドロキシ-4,4′−ジアミノビフェニ
ル、 3,3′−ジクロロ-4,4′−ジアミノビフェニル、
3,3′−ジメチル-4,4′−ジアミノビフェニル、 3,4′
−ジメチル-4,4′−ジアミノビフェニル、 3,3′−ジメ
トキシ-4,4′−ジアミノビフェニル、 4,4′−ビス(4-
アミノフェノキシ)ビフェニル、2,4-ジアミノトルエ
ン、2,5-ジアミノトルエン、2,6-ジアミノトルエン、3,
5-ジアミノトルエン、1,3-ジアミノ−2,5-ジクロロベン
ゼン、1,4-ジアミノ−2,5-ジクロロベンゼン、1-メトキ
シ−2,4-ジアミノベンゼン、1,3-ジアミノ−4,6-ジメチ
ルベンゼン、1,4-ジアミノ-2,5- ジメチルベンゼン、1,
4-ジアミノ-2−メトキシ-5−メチルベンゼン、1,4-ジア
ミノ−2,3,5,6-テトラメチルベンゼン、1,4-ビス(2-メ
トキシ-4−アミノペンチル)ベンゼン、1,4-ビス(1,1-
ジメチル-5−アミノペンチル)ベンゼン、1,4-ビス(4-
アミノフェノキシ)ベンゼン、3,5-ジアミノ安息香酸、
2,5-ジアミノ安息香酸、o-キシレンジアミン、m-キシレ
ンジアミン、p-キシレンジアミン、 9,10-ビス(4-アミ
ノフェニル)アントラセン、 3,3′−ジアミノベンゾフ
ェノン、 4,4′−ジアミノベンゾフェノン、2,6-ジアミ
ノピリジン、3,5-ジアミノピリジン、1,3-ジアミノアダ
マンタン、 3,3′−ジアミノ-1,1,1′−ジアダマンタ
ン、N−(3-アミノフェニル)-4−アミノベンズアミ
ド、 4,4′−ジアミノベンズアニリド、4-アミノフェニ
ル-3−アミノベンゾエート、2,2-ビス(4-アミノフェニ
ル)ヘキサフルオロプロパン、2,2-ビス(3-アミノフェ
ニル)ヘキサフルオロプロパン、2-(3-アミノフェニ
ル)−2-(4-アミノフェニル)ヘキサフルオロプロパ
ン、2,2-ビス[4-(4-アミノフェノキシ)フェニル]ヘ
キサフルオロプロパン、2,2-ビス[4-(2-クロロ-4−ア
ミノフェノキシ)フェニル]ヘキサフルオロプロパン、
1,1-ビス(4-アミノフェニル)-1−フェニル-2,2,2−ト
リフルオロエタン、1,1-ビス[4-(4-アミノフェノキ
シ)フェニル]−1-フェニル-2,2,2−トリフルオロエタ
ン、1,3-ビス(3-アミノフェニル)ヘキサフルオロプロ
パン、1,3-ビス(3-アミノフェニル)デカフルオロプロ
パン、2,2-ビス(3-アミノ-4- ヒドロキシフェニル)ヘ
キサフルオロプロパン、2,2-ビス(3-アミノ-4- メチル
フェニル)ヘキサフルオロプロパン、2,2-ビス(5-アミ
ノ-4- メチルフェニル)ヘキサフルオロプロパン、1,4-
ビス(3-アミノフェニル)ブタ−1-エン-3−イン等が挙
げられ、これらは単独又は 2種以上混合して使用するこ
とができる。As the diamine component of polyamic acid,
For example, 4,4'-diaminodiphenylmethane, 3,3'-
Dimethyl-4,4'-diaminodiphenylmethane, 3,3 ',
5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-diethyl- Four,
4'-diaminodiphenylmethane, 4,4'-methylenebis (cyclohexylamine), 3,3'-dimethyl-4,4 '
-Diaminodicyclohexylmethane, 3,3'-dimethoxy-4,4'-diaminodiphenylmethane, 3,3'-diethoxy-4,4'-diaminodiphenylmethane, bis (3-aminophenyl) ether, bis (4-aminophenyl) ) Ether, 3,4'-diaminodiphenyl ether, 3,3'-
Diethyl-4,4'-diaminodiphenyl ether, 3,3 '
-Dimethoxy-4,4'-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl] ether,
3,3′-dimethyl-4,4′-diaminodiphenyl sulfone, 3,3′-diethyl-4,4′-diaminodiphenyl sulfone, 3,3′-dimethoxy-4,4′-diaminodiphenyl sulfone, 3, 3'-diethoxy-4,4'-diaminodiphenylsulfone, 3,3'-dimethyl-4,4'-diaminodiphenylpropane, 3,3'-diethyl-4,4'-diaminodiphenylpropane, 3,3 '-Dimethoxy-4,4'-diaminodiphenylpropane,3,3'-diethoxy-4,4'-diaminodiphenylpropane, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 1,3- Bis (4-aminophenyl) propane, 2,2-bis (4-aminophenyl) propane, 4,4′-diaminodiphenyl sulfide, 3,3 ′
-Dimethyl-4,4'-diaminodiphenyl sulfide,
3,3'-diethyl-4,4'-diaminodiphenyl sulfide, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfide, 3,3'-diethoxy-4,4'-diaminodiphenyl sulfide, 2, 2'-diaminodiethyl sulfide, 2,4'-diaminodiphenyl sulfide, m-phenylenediamine, p-phenylenediamine, 1,3-bis (4-aminophenoxy) benzene, 1,2-bis (4-aminophenyl) Ethane, 1,1-bis (4-aminophenyl) ethane, bis (3-aminophenyl) sulfone, bis (4-aminophenyl) sulfone, o-toluidine sulfone, bis [4- (4-
Aminophenoxy) phenyl] sulfone, bis [4- (3-
Aminophenoxy) phenyl] sulfone, 4,4′-diaminodibenzyl sulfoxide, bis (4-aminophenyl) diethylsilane, bis (4-aminophenyl) diphenylsilane, bis (4-aminophenyl) ethylphosphine oxide, bis ( 4-aminophenyl) phenylphosphine oxide, bis (4-aminophenyl) -N-phenylamine, bis (4-aminophenyl) -N-methylamine, 1,2-diaminonaphthalene, 1,4-diaminonaphthalene, 1 , 5-Diaminonaphthalene, 1,6-Diaminonaphthalene, 1,7-Diaminonaphthalene, 1,8-Diaminonaphthalene, 2,3-Diaminonaphthalene, 2,6-Diaminonaphthalene, 1,4-Diamino-2-methyl Naphthalene, 1,5-diamino
-2-methylnaphthalene, 1,3-diamino-2-phenylnaphthalene, 9,9-bis (4-aminophenyl) fluorene,
4,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl,
3,3'-Dimethyl-4,4'-diaminobiphenyl, 3,4 '
-Dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 4,4'-bis (4-
Aminophenoxy) biphenyl, 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene, 3,
5-diaminotoluene, 1,3-diamino-2,5-dichlorobenzene, 1,4-diamino-2,5-dichlorobenzene, 1-methoxy-2,4-diaminobenzene, 1,3-diamino-4, 6-dimethylbenzene, 1,4-diamino-2,5-dimethylbenzene, 1,
4-diamino-2-methoxy-5-methylbenzene, 1,4-diamino-2,3,5,6-tetramethylbenzene, 1,4-bis (2-methoxy-4-aminopentyl) benzene, 1, 4-bis (1,1-
Dimethyl-5-aminopentyl) benzene, 1,4-bis (4-
Aminophenoxy) benzene, 3,5-diaminobenzoic acid,
2,5-diaminobenzoic acid, o-xylenediamine, m-xylenediamine, p-xylenediamine, 9,10-bis (4-aminophenyl) anthracene, 3,3′-diaminobenzophenone, 4,4′-diamino Benzophenone, 2,6-diaminopyridine, 3,5-diaminopyridine, 1,3-diaminoadamantane, 3,3′-diamino-1,1,1′-diadamantane, N- (3-aminophenyl) -4 -Aminobenzamide, 4,4'-diaminobenzanilide, 4-aminophenyl-3-aminobenzoate, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-aminophenyl) hexa Fluoropropane, 2- (3-aminophenyl) -2- (4-aminophenyl) hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [ 4- (2-chloro-4-aminophenyl Phenoxy) phenyl] hexafluoropropane,
1,1-bis (4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane, 1,1-bis [4- (4-aminophenoxy) phenyl] -1-phenyl-2,2 , 2-Trifluoroethane, 1,3-bis (3-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenyl) decafluoropropane, 2,2-bis (3-amino-4-hydroxy) Phenyl) hexafluoropropane, 2,2-bis (3-amino-4-methylphenyl) hexafluoropropane, 2,2-bis (5-amino-4-methylphenyl) hexafluoropropane, 1,4-
Examples thereof include bis (3-aminophenyl) but-1-en-3-yne, which may be used alone or in combination of two or more.
【0016】このポリイミド樹脂の前駆体であるポリア
ミック酸は、 0.5g /N−メチル-2−ピロリドン 10ml
の濃度溶液として、30℃における対数粘度が 0.2〜 4.0
の範囲であり、より好ましくは 0.3〜 2.0の範囲であ
る。ポリアミック酸は、ほぼ当モルの酸成分とジアミン
成分とを有機溶媒中で30℃以下、好ましくは20℃以下の
反応温度下に 3〜12時間付加重合反応させて得られる。
この重合反応における有機溶媒として、例えばN,N−
ジメチルスルホキシド、N,N−ジメチルホルムアミ
ド、N,N−ジエチルホルムアミド、N,N−ジメチル
アセトアミド、N,N−ジエチルアセトアミド、N−メ
チル-2−ピロリドン、ヘキサメチレンホスホアミド等が
挙げられ、これらは単独又は 2種以上混合して使用する
ことができる。The polyamic acid which is the precursor of this polyimide resin is 0.5 g / N-methyl-2-pyrrolidone 10 ml
As a solution with a concentration of, the logarithmic viscosity at 30 ℃ is 0.2 to 4.0.
And more preferably 0.3 to 2.0. The polyamic acid can be obtained by subjecting an approximately equimolar amount of an acid component and a diamine component to an addition polymerization reaction in an organic solvent at a reaction temperature of 30 ° C. or lower, preferably 20 ° C. or lower for 3 to 12 hours.
As the organic solvent in this polymerization reaction, for example, N, N-
Examples thereof include dimethyl sulfoxide, N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methyl-2-pyrrolidone and hexamethylenephosphoamide. They can be used alone or in combination of two or more.
【0017】本発明に用いる(B)ウラシル誘導体とし
ては、前記の一般式化10で示されるものが使用され
る。前記の一般式でR3 が−H、−CH3 、−COO
H、−COOCH3 等が挙げられるが、溶剤の溶解性を
考慮した場合、R3 が−COOH、−COOCH3 のオ
ロト酸、オロト酸メチルエステル等を好ましく使用する
ことができる。ウラシル誘導体の配合割合は、上述した
ポリアミック酸 100重量部に対して、1 〜50重量部配合
することが好ましい。この配合量が 1重量部未満の場合
は、十分な増感効果が得られず、また、50重量部を超え
るとポリアミック酸溶液中で析出したり、形成した塗膜
上に析出し好ましくない。As the uracil derivative (B) used in the present invention, those represented by the above general formula 10 are used. In the above general formula, R 3 is —H, —CH 3 , —COO.
H, although -COOCH 3 or the like, in consideration of the solubility of the solvent can be R 3 is -COOH, orotic acid -COOCH 3, used preferably orotic acid methyl ester. The mixing ratio of the uracil derivative is preferably 1 to 50 parts by weight with respect to 100 parts by weight of the above polyamic acid. If the amount is less than 1 part by weight, a sufficient sensitizing effect cannot be obtained, and if it exceeds 50 parts by weight, the compound is precipitated in the polyamic acid solution or on the formed coating film, which is not preferable.
【0018】本発明で最も重要なことは、ウラシル誘導
体が、後述する(C)ビスアジド化合物に対して飛躍的
な光架橋増感剤機能を有し、更に同一化合物内に、ポリ
イミド膜が長期放置によって吸湿した水分を完全に蒸発
させ得る程度の加熱処理においても、一般的な非プロト
ン性極性溶剤で速やかに現像する構造を有していること
を見いだしたことである。The most important thing in the present invention is that the uracil derivative has a dramatic photocrosslinking sensitizer function for the (C) bisazide compound described below, and the polyimide film is left in the same compound for a long time. It was found that even in the heat treatment to such an extent that the moisture absorbed by the method can be completely evaporated, it has a structure in which it can be rapidly developed with a general aprotic polar solvent.
【0019】即ち、ウラシル誘導体は、ビスアジド化合
物の架橋剤に対して飛躍的な増感効果を発揮するため、
従来の使用量よりも少なく極少量のビスアジド化合物の
添加で十分実用に供する感度を得ることができるばかり
でなく、更に高感度の架橋能を得ることができる。ま
た、これまでフォトレジスト材料の感光剤成分として用
いられているビスアジド化合物(例えば2,6-ビス−(パ
ラアジドベンザル)-4−メチルシクロヘキサノン)は、
極性の高いポリアミック酸との相溶性が低いため、塗膜
を形成する際に析出したり、樹脂溶剤に対する溶解性が
低く添加量に限界があるため高感度のものを得ることが
できなかった。ウラシル誘導体を用いて増感させること
によって析出しない、極少量の添加量で十分な感度がえ
られるため、相溶性の低いビスアジド化合物においても
十分実用化が可能となる。That is, since the uracil derivative exerts a dramatic sensitizing effect on the crosslinking agent of the bisazide compound,
By adding a very small amount of the bisazide compound, which is smaller than the conventional amount used, not only the sensitivity for practical use can be obtained, but also the crosslinking ability with higher sensitivity can be obtained. Further, the bisazide compound (eg, 2,6-bis- (paraazidobenzal) -4-methylcyclohexanone) which has been used as a photosensitizer component of a photoresist material is
Since the compatibility with polyamic acid having a high polarity is low, precipitation occurs when forming a coating film, and the solubility in a resin solvent is low and the addition amount is limited, so that a highly sensitive product cannot be obtained. It does not precipitate when sensitized with a uracil derivative, and a sufficient sensitivity can be obtained with an extremely small amount of addition, so that even a bisazide compound having low compatibility can be sufficiently put into practical use.
【0020】さらに、ウラシル誘導体は、同一構造内に
活性プロトンを有する二級アミンがあり、この二級アミ
ンが隣接するカルボニル基によって電子吸引効果を受け
てより活性化されている。この構造を有するウラシル誘
導体を、非プロトン性極性溶剤にて合成したポリアミッ
ク酸に添加することによって、ポリイミド膜の溶解性を
格段に向上させることができる。例えば、従来のポリア
ミック酸を基板上にスピンコーターを用いて塗布し、80
〜95℃で 3分間熱処理して膜厚を10μm とし、続いて12
0 ℃で5 分間の熱処理をし、N−メチル-2−ピロリドン
とメタノール 7:3 容に混合した現像液で全面溶解させ
ると、200 秒程度の溶解時間が必要であったが、ウラシ
ル誘導体 3重量部添加したポリアミック酸では30〜40秒
程度で溶解することができる。この現象は、ポリイミド
膜の長期間放置による溶解性の低下を防止させることが
できるものである。即ち、従来のポリアミック酸を基板
上に塗布しポリイミド膜を形成し、その状態で放置する
と放置時間とともに溶解性が低下した。そして、その低
下する割合は放置する環境によって左右され、高湿度環
境ほど大きく低下し、25℃,50%の環境では、放置時間
24時間で初期溶解時間の3 倍程度の時間が必要であっ
た。さらに、放置後のポリイミド膜では現像液による溶
解中、塗膜全面に樹脂クラックが発生した。これらの主
な原因は、ポリイミド膜の吸湿であったが一度吸湿した
水分を熱処理によって完全に蒸発させ、初期の溶解性を
回復させるには 100℃以上の熱処理条件が必要であり、
この条件で従来のポリアミック酸を処理すると、溶解時
間が長くなるため実用性に乏しかった。Further, the uracil derivative has a secondary amine having an active proton in the same structure, and the secondary amine is further activated by an electron-withdrawing effect by an adjacent carbonyl group. By adding the uracil derivative having this structure to the polyamic acid synthesized in the aprotic polar solvent, the solubility of the polyimide film can be significantly improved. For example, a conventional polyamic acid is coated on a substrate using a spin coater,
Heat treat at ~ 95 ° C for 3 minutes to a film thickness of 10 μm, then
When heat-treated at 0 ° C for 5 minutes and completely dissolved in a developer mixed with N-methyl-2-pyrrolidone and 7: 3 volume of methanol, a dissolution time of about 200 seconds was required. The polyamic acid added in parts by weight can be dissolved in about 30 to 40 seconds. This phenomenon can prevent a decrease in solubility of the polyimide film due to being left for a long period of time. That is, when a conventional polyamic acid was applied on a substrate to form a polyimide film and the polyimide film was left in that state, the solubility decreased with the standing time. The rate of decrease depends on the environment in which it is left, and it decreases greatly in a high humidity environment.
About 24 hours required about 3 times the initial dissolution time. Further, in the polyimide film after standing, a resin crack was generated on the entire surface of the coating film during dissolution by the developing solution. The main cause of these was the moisture absorption of the polyimide film, but once the moisture that has once absorbed is completely evaporated by heat treatment, it is necessary to heat treatment conditions of 100 ° C or higher to restore the initial solubility.
When the conventional polyamic acid is treated under this condition, the dissolution time becomes long, so that it is not practical.
【0021】本発明に用いる(C)ビスアジド化合物と
しては、前記一般式化11で示されるもので従来より光
架橋能が優れているものであれば、その構造に限定され
ることなく使用される。R4 としては分子の両末端に芳
香族アジド基を有する化合物が好ましく使用され、その
基本骨格が、例えばアルキレン、カルコン、シクロヘキ
サノンタイプのものが挙げられる。またそれらの化合物
の溶解性を向上させたものでもよい。ビスアジド化合物
の配合割合は、前述したポリアミック酸100 重量部に対
して 0.1〜50重量部配合することが好ましい。より好ま
しくは 0.1〜20重量部の範囲内である。配合量が 0.1重
量部未満では十分な感度が得られず、また100 重量部を
超えると樹脂中又は塗膜中に析出することがあり好まし
くない。非プロトン性極性溶剤であるN−メチル-2−ピ
ロリドン、ジメチルアセトアミド、ジメチルホルムアミ
ド等に全く溶解しない化合物については、樹脂中又は塗
膜中に析出することがある。しかし、本発明において
は、その溶解性が低いために実用化が不可能とされてい
た、例えば2,6-ビス−(パラアジドベンザル)-4−メチ
ルシクロヘキサノン等のビスアジド化合物についても問
題のない範囲の添加量で十分感度を得ることができる。The (C) bisazide compound used in the present invention is not limited to its structure as long as it is represented by the above general formula 11 and has a photocrosslinking ability superior to the conventional one. . As R 4 , a compound having an aromatic azide group at both ends of the molecule is preferably used, and examples of the basic skeleton include alkylene, chalcone and cyclohexanone type compounds. Further, those having improved solubility of these compounds may be used. The blending ratio of the bisazide compound is preferably 0.1 to 50 parts by weight with respect to 100 parts by weight of the above polyamic acid. It is more preferably in the range of 0.1 to 20 parts by weight. If the amount is less than 0.1 parts by weight, sufficient sensitivity cannot be obtained, and if it exceeds 100 parts by weight, it may be precipitated in the resin or the coating film, which is not preferable. Compounds that are completely insoluble in aprotic polar solvents such as N-methyl-2-pyrrolidone, dimethylacetamide, and dimethylformamide may precipitate in the resin or coating film. However, in the present invention, there is a problem with bisazide compounds such as 2,6-bis- (paraazidobenzal) -4-methylcyclohexanone, which has been considered to be impractical due to its low solubility. Sufficient sensitivity can be obtained with an addition amount in the range not present.
【0022】本発明に用いる(D)アミン化合物として
は、前記一般式化12で示されるもので前述したビスア
ジド化合物と効率よく反応するものであれば、特に限定
されるものではない。具体的な化合物としては、例え
ば、2-(N,N−ジメチルアミノ)エチルアクリレー
ト、2-(N,N−ジメチルアミノ)エチルメタクリレー
ト、3-(N,N−ジメチルアミノ)プロピルアクリレー
ト、3-(N,N−ジメチルアミノ)プロピルメタクリレ
ート、4-(N,N−ジメチルアミノ)ブチルメタクリレ
ート、4-(N,N−ジメチルアミノ)ブチルアクリレー
ト、5-(N,N−ジメチルアミノ)ペンチルアクリレー
ト、5-(N,N−ジメチルアミノ)ペンチルメタクリレ
ート、6-(N,N−ジメチルアミノ)ヘキシルアクリレ
ート、6-(N,N−ジメチルアミノ)ヘキシルメタクリ
レート、ソルビタン酸3-(N,N−ジメチルアミノ)プ
ロピル、ソルビタン酸2-(N,N−ジメチルアミノ)エ
チル、ソルビタン酸4-(N,N−ジメチルアミノ)ブチ
ル等が挙げられ、これらは単独又は 2種以上混合して使
用することができる。これらアミン化合物の配合割合
は、前述したポリアミック酸100 重量部に対して 1〜10
0 重量部配合することが好ましい。配合量が1 重量部未
満、また100 重量部を超えると感度が低く、また混合す
るポリアミック酸の保存安定性に悪影響を及ぼし好まし
くない。The amine compound (D) used in the present invention is not particularly limited as long as it is a compound represented by the general formula 12 and can react efficiently with the above-mentioned bisazide compound. As specific compounds, for example, 2- (N, N-dimethylamino) ethyl acrylate, 2- (N, N-dimethylamino) ethyl methacrylate, 3- (N, N-dimethylamino) propyl acrylate, 3- (N, N-dimethylamino) propyl methacrylate, 4- (N, N-dimethylamino) butyl methacrylate, 4- (N, N-dimethylamino) butyl acrylate, 5- (N, N-dimethylamino) pentyl acrylate, 5- (N, N-dimethylamino) pentyl methacrylate, 6- (N, N-dimethylamino) hexyl acrylate, 6- (N, N-dimethylamino) hexyl methacrylate, sorbitan acid 3- (N, N-dimethylamino) ) Propyl, 2- (N, N-dimethylamino) ethyl sorbitan, 4- (N, N-dimethylamino) sorbitanate Le, and these may be used alone or in combination. The mixing ratio of these amine compounds is 1 to 10 parts by weight with respect to 100 parts by weight of the above-mentioned polyamic acid.
It is preferable to add 0 part by weight. If the blending amount is less than 1 part by weight or more than 100 parts by weight, the sensitivity is low, and the storage stability of the polyamic acid to be mixed is adversely affected, which is not preferable.
【0023】本発明の感光性重合体組成物は、上述した
ポリアミック酸、ウラシル誘導体、ビスアジド化合物お
よびアミン化合物を必須成分とするが、本発明の目的に
反しない限度おいてその他の成分、必要に応じてシリ
カ、炭酸カルシウム、炭酸マグネシウム、炭酸ナトリウ
ム、タルク、ベントナイト等の無機充填剤、チキソトロ
ピー剤、フタロシアニングリーン等の着色剤、消泡剤、
カップリング剤、レベリング剤等を添加配合して製造す
ることができる。The photosensitive polymer composition of the present invention contains the above-mentioned polyamic acid, uracil derivative, bisazide compound and amine compound as essential components, but other components, if necessary, may be added as long as they do not deviate from the object of the present invention. Correspondingly, inorganic fillers such as silica, calcium carbonate, magnesium carbonate, sodium carbonate, talc, bentonite, thixotropic agents, colorants such as phthalocyanine green, defoaming agents,
A coupling agent, a leveling agent and the like can be added and blended to produce the composition.
【0024】こうして得られた感光性重合体組成物を用
いて、パターン形成を行うが、その一例を説明する。The photosensitive polymer composition thus obtained is used to form a pattern, one example of which will be described.
【0025】感光性重合体組成物を基板上にスピンコー
ターを用いて塗布し、80〜95℃で3分間熱処理して膜厚
を 1〜30μm 、好ましくは 3〜10μm に調整する。次い
で通常のネガ型フォトマスクを通して露光を行い、次い
で 110〜140 ℃程度の熱処理を 5〜30秒間行った後、未
露光部を非プロトン性極性溶剤で溶解除去する。その
際、露光後の熱処理の温度が低い場合や時間が短いと、
十分な感度が得られないばかりでなく初期の溶解性をも
回復することができない。現像方法としては浸漬法やス
プレー法等が好ましいが特に限定されるものではない。
また、現像液としては一般的な非プロトン性極性溶剤の
N−メチル−2-ピロリドン、ジメチルアセトアミド、ジ
メチルホルムアミド等の樹脂溶剤を単独で使用するか、
メタノール、エタノール等のアルコールを混合して用い
てもよい。現像後、アルコール系リンス液、メタノー
ル、エタノール、プロパノール等でリンス洗浄すること
によって解像度に優れ、かつシャープな端面の樹脂パタ
ーンを得ることができる。このようにして得られた樹脂
パターンは、200 〜400 ℃の最終熱処理することにより
イミド化し高耐熱性を有するポリイミド樹脂パターンを
形成することができる。The photosensitive polymer composition is coated on a substrate using a spin coater and heat-treated at 80 to 95 ° C. for 3 minutes to adjust the film thickness to 1 to 30 μm, preferably 3 to 10 μm. Then, exposure is carried out through a normal negative type photomask, then heat treatment is carried out at about 110 to 140 ° C. for 5 to 30 seconds, and then the unexposed portion is dissolved and removed by an aprotic polar solvent. At that time, if the temperature of the heat treatment after exposure is low or if the time is short,
Not only is sufficient sensitivity not obtained, but the initial solubility cannot be restored. The developing method is preferably a dipping method or a spray method, but is not particularly limited.
As the developing solution, a resin solvent such as N-methyl-2-pyrrolidone, dimethylacetamide or dimethylformamide, which is a general aprotic polar solvent, may be used alone or
You may mix and use alcohols, such as methanol and ethanol. After the development, by rinsing with an alcohol-based rinsing solution, methanol, ethanol, propanol or the like, it is possible to obtain a resin pattern having excellent resolution and a sharp end surface. The resin pattern thus obtained can be imidized by a final heat treatment at 200 to 400 ° C. to form a polyimide resin pattern having high heat resistance.
【0026】[0026]
【作用】本発明の感光性重合体組成物は、ポリアミック
酸、ウラシル誘導体、ビスアジド化合物および特定のア
ミン化合物を配合することにより、高感度、高解像度で
ポリアミック酸膜形成後、長時間放置後においても溶解
性は低下せず、この組成物を用いることによって安定し
たパターニングを形成方法が可能となったものである。The photosensitive polymer composition of the present invention contains a polyamic acid, a uracil derivative, a bisazide compound, and a specific amine compound to form a polyamic acid film with high sensitivity and high resolution, and after leaving it for a long time. However, the solubility does not decrease, and the use of this composition enables a stable patterning forming method.
【0027】[0027]
【実施例】次に、本発明を実施例によって説明するが、
本発明はこれらの実施例によって限定されるものではな
い。The present invention will be described below with reference to examples.
The invention is not limited by these examples.
【0028】実施例1 攪拌機、冷却器および窒素導入管を設けたフラスコに
4,4′−ジアミノジフェニルエーテル20.0 g( 0.1mol
)とN−メチル-2−ピロリドン 4容とジメチルアセト
アミド 6容の反応溶剤中、室温で窒素雰囲気下にピロメ
リット酸二無水物21.8 g( 0.1mol )を溶液温度の上昇
に注意しながら分割して加え、室温で10時間攪拌してポ
リアミック酸を製造した。このポリアミック酸 100g に
対して、2-(N,N−ジメチルアミノ)エチルメタクリ
レート15g を加えて12時間攪拌し、次いで2,6-ビス−
(パラアジドベンザル)-4−メチルシクロヘキサノン
0.1g およびオロト酸 3.0g を添加して感光性重合体組
成物(A)を製造した。Example 1 A flask equipped with a stirrer, a condenser and a nitrogen inlet tube was placed in a flask.
4,4'-Diaminodiphenyl ether 20.0 g (0.1 mol
) And N-methyl-2-pyrrolidone (4 volumes) and dimethylacetamide (6 volumes) in a reaction solvent at room temperature under a nitrogen atmosphere, 21.8 g (0.1 mol) of pyromellitic dianhydride was divided while paying attention to the rise of the solution temperature. Was added and stirred at room temperature for 10 hours to produce a polyamic acid. To 100 g of this polyamic acid, 15 g of 2- (N, N-dimethylamino) ethyl methacrylate was added and stirred for 12 hours, and then 2,6-bis-
(Paraazidobenzal) -4-methylcyclohexanone
Photosensitive polymer composition (A) was manufactured by adding 0.1 g and 3.0 g of orotic acid.
【0029】実施例2 攪拌機、冷却器および窒素導入管を設けたフラスコに
4,4′−ジアミノジフェニルエーテル20.0g ( 0.1mol
)とN−メチル-2−ピロリドン 4容とジメチルアセト
アミド 6容の反応溶剤中、室温で窒素雰囲気下に 3,
3′,4,4′−ベンゾフェノンテトラカルボン酸二無水物3
2.2 g( 0.1mol )を溶液温度の上昇に注意しながら分
割して加え、室温で10時間攪拌してポリアミック酸を製
造した。このポリアミック酸 100g に対して、2-(N,
N−ジメチルアミノ)エチルメタクリレート15g を加え
て12時間攪拌し、次いで2,6-ビス(パラアジドベンザ
ル)-4−メチルシクロヘキサノン 0.1g およびオロト酸
3.0g を添加して感光性重合体組成物(B)を製造し
た。Example 2 A flask equipped with a stirrer, a cooler and a nitrogen inlet tube was placed in a flask.
4,4'-Diaminodiphenyl ether 20.0g (0.1mol
) And N-methyl-2-pyrrolidone (4 volumes) and dimethylacetamide (6 volumes) in a reaction solvent at room temperature under a nitrogen atmosphere.
3 ', 4,4'-benzophenone tetracarboxylic acid dianhydride 3
2.2 g (0.1 mol) was added in portions while paying attention to the rise in solution temperature, and the mixture was stirred at room temperature for 10 hours to produce a polyamic acid. For 100 g of this polyamic acid, 2- (N,
15 g of N-dimethylamino) ethyl methacrylate was added and stirred for 12 hours, and then 0.1 g of 2,6-bis (paraazidobenzal) -4-methylcyclohexanone and orotic acid
A photosensitive polymer composition (B) was produced by adding 3.0 g.
【0030】実施例3 攪拌機、冷却器および窒素導入管を設けたフラスコに
4,4′−ジアミノジフェニルエーテル20.0g ( 0.1mol
)とN−メチル-2−ピロリドン 167g を投入し、室温
で窒素雰囲気下に 3,3′,4,4′−ビフェニルテトラカル
ボン酸二無水物29.4g( 0.1mol )を溶液温度の上昇に
注意しながら分割して加え、室温で10時間攪拌してポリ
アミック酸を製造した。このポリアミック酸 100g に対
して、2-(N,N−ジメチルアミノ)エチルメタクリレ
ート15g を加えて12時間攪拌し、次いで2,6-ビス−(パ
ラアジドベンザル)−4-メチルシクロヘキサノン 0.1g
およびオロト酸 3.0g を添加して感光性重合体組成物
(C)を製造した。Example 3 A flask equipped with a stirrer, a condenser and a nitrogen introducing tube was placed.
4,4'-Diaminodiphenyl ether 20.0g (0.1mol
) And N-methyl-2-pyrrolidone (167 g) are added, and 29.4 g (0.1 mol) of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride is added to the solution at room temperature under a nitrogen atmosphere so that the temperature of the solution may rise. While adding in portions, the mixture was stirred at room temperature for 10 hours to produce a polyamic acid. To 100 g of this polyamic acid, 15 g of 2- (N, N-dimethylamino) ethyl methacrylate was added and stirred for 12 hours, and then 0.1 g of 2,6-bis- (paraazidobenzal) -4-methylcyclohexanone
And 3.0 g of orotic acid were added to produce a photosensitive polymer composition (C).
【0031】実施例1〜3で得た感光性重合体組成物を
シリコンウエーハー上に、スピンコーターを使用して塗
布し、85℃で 3分間の熱処理を行い膜厚を10μm に調整
し、次いで250 Wの超高圧水銀灯でネガ型ガラスマスク
を通して30秒間密着露光を行った。露光後120 ℃で5 分
間加熱しN−メチル-2−ピロリドン 7容、メタノール3
容の現像液で40秒間静止バドル現像、プロパノールでリ
ンスして最小線幅 5μm の樹脂パターンを得た。また、
他のシリコンウエーハに上記と同様な操作で感光性重合
体組成物を10μm に塗布し、25℃/50%の環境で 3日間
放置した後に露光、次いで加熱処理、現像したところ40
秒間の現像時間で最小線幅 5μm の樹脂パターンを得
た。この時放置前後でパターニング精度は変化せず、現
像不足も発生しなかった。得られたパターンは 200〜40
0 ℃/ 1〜2 時間の最終熱処理においても外観上の不良
はなく実用レベルに達していた。また、最終硬化物はシ
リコンウエーハと強固に密着しており、特性上問題はな
かった。これらの結果を表1に示した。いずれも本発明
の特性が優れており、本発明の顕著な効果を確認するこ
とができた。The photosensitive polymer compositions obtained in Examples 1 to 3 were coated on a silicon wafer using a spin coater and heat-treated at 85 ° C. for 3 minutes to adjust the film thickness to 10 μm. Then, contact exposure was carried out for 30 seconds with a 250 W ultra-high pressure mercury lamp through a negative glass mask. After exposure, heat at 120 ° C for 5 minutes, N-methyl-2-pyrrolidone 7 volumes, methanol 3
Static paddle development for 40 seconds with a volume of developing solution and rinsing with propanol to obtain a resin pattern having a minimum line width of 5 μm. Also,
The photopolymer composition was applied to another silicon wafer in the same manner as above to a thickness of 10 μm, left standing in an environment of 25 ° C / 50% for 3 days, then exposed, then heat-treated and developed.
A resin pattern having a minimum line width of 5 μm was obtained with a developing time of 2 seconds. At this time, the patterning accuracy did not change before and after leaving, and insufficient development did not occur. The resulting pattern is 200-40
Even in the final heat treatment at 0 ° C for 1 to 2 hours, there was no defect in appearance and it reached a practical level. Further, the final cured product was firmly adhered to the silicon wafer, and there was no problem in terms of characteristics. The results are shown in Table 1. All were excellent in the characteristics of the present invention, and the remarkable effects of the present invention could be confirmed.
【0032】比較例1 実施例1において、2,6-ビス−(パラアジドベンザル)
-4−メチルシクロヘキサノン 0.1g およびオロト酸 3g
を加えない以外は実施例1と同様にして感光性重合体組
成物(D)を製造した。Comparative Example 1 In Example 1, 2,6-bis- (paraazidobenzal)
-4-methylcyclohexanone 0.1g and orotic acid 3g
A photosensitive polymer composition (D) was produced in the same manner as in Example 1 except that the above was not added.
【0033】比較例2 実施例2において、オロト酸 3g を加えない以外は実施
例1と同様にして感光性重合体組成物(E)を製造し
た。Comparative Example 2 A photosensitive polymer composition (E) was produced in the same manner as in Example 2 except that 3 g of orotic acid was not added.
【0034】比較例3 実施例3において、オロト酸 3g を加えない以外は実施
例1と同様にして感光性重合体組成物(F)を製造し
た。Comparative Example 3 A photosensitive polymer composition (F) was produced in the same manner as in Example 3 except that 3 g of orotic acid was not added.
【0035】比較例1〜3で得た感光性重合体組成物を
シリコンウエーハ上に、スピンコーターを使用して塗布
し、85℃で 3分間の熱処理を行い膜厚を10μm に調整
し、次いで250 Wの超高圧水銀灯でネガ型ガラスマスク
を通して30秒間密着露光を行った。露光後120 ℃で5 分
間加熱しN−メチル-2−ピロリドン 7容、メタノール 3
容の現像液で50秒間静止バドル現像、プロパノールでリ
ンスしたところ、ポリイミド樹脂パターンを得ることが
できなかった(比較例2、3では最小線幅20〜30μm の
ポリイミド樹脂パターンを得た。しかし、得られた樹脂
パターンは現像による膜べり量が激しく、また、ウエー
ハ上で膜べり量のばらつきが発生し、最大膜べり量 9μ
m 程度であった。)。そこで現像時間を30〜50秒の間で
検討したが、露光部及び未露光部の溶解差がないために
パターニングが得られなかった。また、他のシリコンウ
エーハに上記と同様な操作で感光性重合体組成物を10μ
m に塗布し、25℃/50%の環境で 3日間放置した後に露
光、次いで加熱処理、現像したところ、現像時間50秒で
は完全な露光不足が発生し、パターニング形成が不可能
であった(比較例2、3では、さらに現像時間を伸ばし
て現像を完結させるために、160 秒の現像時間が必要で
あった)。加えて、現像中ポリイミド膜に無数の樹脂ク
ラックが発生した。The photosensitive polymer compositions obtained in Comparative Examples 1 to 3 were coated on a silicon wafer by using a spin coater and heat-treated at 85 ° C. for 3 minutes to adjust the film thickness to 10 μm. Contact exposure was carried out for 30 seconds with a 250 W ultra-high pressure mercury lamp through a negative glass mask. After exposure, heat at 120 ° C for 5 minutes, N-methyl-2-pyrrolidone 7 volumes, methanol 3
After a static paddle development for 50 seconds with a sufficient amount of developing solution and rinsing with propanol, a polyimide resin pattern could not be obtained (in Comparative Examples 2 and 3, a polyimide resin pattern having a minimum line width of 20 to 30 μm was obtained. The obtained resin pattern has a large amount of film slip due to development, and the amount of film slip varies on the wafer.
It was about m. ). Therefore, the development time was examined between 30 and 50 seconds, but patterning could not be obtained because there was no difference in dissolution between the exposed and unexposed areas. In addition, the photosensitive polymer composition was applied to another silicon wafer in the same manner as described above in an amount of 10 μm.
When it was applied to m and left for 3 days in an environment of 25 ° C / 50%, it was exposed to light, then heat-treated and developed, a complete underexposure occurred at a development time of 50 seconds, making patterning impossible ( In Comparative Examples 2 and 3, a developing time of 160 seconds was required in order to further extend the developing time and complete the development). In addition, countless resin cracks were generated in the polyimide film during development.
【0036】[0036]
【表1】 *1 :露光部/未露光部の溶解差がないためパターニング不可能。 *2 :(最終硬化後膜厚/現像前膜厚)×100 *3 :24時間放置後現像時間/放置前現像時間 *4 :○印…クラックの発生なし、×印…クラック全面発生。 *5 :○印…良好、×印…不良。[Table 1] * 1: Patterning is impossible because there is no difference in dissolution between exposed and unexposed areas. * 2: (Film thickness after final curing / film thickness before development) × 100 * 3: Development time after leaving for 24 hours / Development time before leaving * 4: ○: No cracks, ×: Cracks are generated on the entire surface. * 5: ○: Good, ×: Bad.
【0037】[0037]
【発明の効果】以上の説明および表1から明らかなよう
に、本発明の感光性重合体組成物およびパターン形成方
法によれば、高感度、高解像度のパターニング精度を有
し、成膜工程で長期間の放置や長期間の保管においても
溶解性の低下や樹脂クラックの発生がなく、安定した信
頼性の高いパターニング加工性を有し、製品歩留りを格
段に向上させることができる。As is apparent from the above description and Table 1, the photosensitive polymer composition and the pattern forming method of the present invention have high sensitivity and high resolution patterning accuracy, and Even if it is left for a long period of time or stored for a long period of time, there is no deterioration in solubility or the occurrence of resin cracks, and it has stable and highly reliable patterning processability, and the product yield can be significantly improved.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 G03F 7/027 7/038 504 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location G03F 7/027 7/038 504
Claims (2)
ク酸、 【化1】 (但し、式中R1 は 4価の芳香族基を、R2 は 2価の芳
香族基をそれぞれ表す) (B)次の一般式で示されるウラシル誘導体、 【化2】 (但し、式中R3 は−H、−CH3 、−COOH、−C
OOCH3 を表す) (C)次の一般式で示されるビスアジド化合物および 【化3】N3 −R4 −N3 (但し、式中R4 は 2価又は 3価の有機基を表す) (D)次の一般式で示されるアミン化合物 【化4】 (但し、式中R5 、R6 、R7 は、水素、低級アルキル
基、フェニル基又は低級アルケニル基を、R8 はアルキ
レン基を表し、これらは同一又は異なってもよい)を必
須成分としてなることを特徴とする感光性重合体組成
物。1. A polyamic acid represented by the following general formula (A): (Wherein R 1 represents a tetravalent aromatic group and R 2 represents a divalent aromatic group) (B) A uracil derivative represented by the following general formula: (However, in the formula, R 3 is —H, —CH 3 , —COOH, —C
OOCH 3 ) (C) A bisazide compound represented by the following general formula and N 3 —R 4 —N 3 (wherein R 4 represents a divalent or trivalent organic group) ( D) An amine compound represented by the following general formula: (Wherein R 5 , R 6 , and R 7 represent hydrogen, a lower alkyl group, a phenyl group, or a lower alkenyl group, and R 8 represents an alkylene group, which may be the same or different) A photosensitive polymer composition comprising:
ク酸、 【化5】 (但し、式中R1 は 4価の芳香族基を、R2 は 2価の芳
香族基をそれぞれ表す) (B)次の一般式で示されるウラシル誘導体、 【化6】 (但し、式中R3 は−H、−CH3 、−COOH、−C
OOCH3 を表す) (C)次の一般式で示されるビスアジド化合物および 【化7】N3 −R4 −N3 (但し、式中R4 は 2価又は 3価の有機基を表す) (D)次の一般式で示されるアミン化合物 【化8】 (但し、式中R5 、R6 、R7 は、水素、低級アルキル
基、フェニル基又は低級アルケニル基を、R8 はアルキ
レン基を表し、これらは同一又は異なってもよい)を必
須成分とする感光性重合体組成物を、基板上に塗布、乾
燥して得た感光基材に活性光線を照射して露光した後、
加熱処理を行い、次いで未露光部を非プロトン性極性溶
剤で溶解除去することを特徴とするパターン形成方法。2. A polyamic acid represented by the following general formula: (In the formula, R 1 represents a tetravalent aromatic group, and R 2 represents a divalent aromatic group.) (B) A uracil derivative represented by the following general formula: (However, in the formula, R 3 is —H, —CH 3 , —COOH, —C
OOCH 3 are expressed) (C) azido compounds represented by the following general formula and embedded image N 3 -R 4 -N 3 (however, wherein R 4 represents a divalent or trivalent organic group) ( D) An amine compound represented by the following general formula: (Wherein R 5 , R 6 , and R 7 represent hydrogen, a lower alkyl group, a phenyl group, or a lower alkenyl group, and R 8 represents an alkylene group, and these may be the same or different) After exposing the photosensitive polymer composition to be coated on a substrate, dried and exposed to a photosensitive substrate obtained by irradiating with an actinic ray,
A pattern forming method, which comprises performing heat treatment and then dissolving and removing an unexposed portion with an aprotic polar solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27845394A JPH08113708A (en) | 1994-10-18 | 1994-10-18 | Photosensitive polymer composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27845394A JPH08113708A (en) | 1994-10-18 | 1994-10-18 | Photosensitive polymer composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08113708A true JPH08113708A (en) | 1996-05-07 |
Family
ID=17597556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27845394A Pending JPH08113708A (en) | 1994-10-18 | 1994-10-18 | Photosensitive polymer composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08113708A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0957400A4 (en) * | 1997-01-30 | 2000-05-10 | Hitachi Chemical Co Ltd | PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNS THEREFROM, ELECTRONIC DEVICE PRODUCED THEREWITH AND METHOD FOR PRODUCING SAME |
-
1994
- 1994-10-18 JP JP27845394A patent/JPH08113708A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0957400A4 (en) * | 1997-01-30 | 2000-05-10 | Hitachi Chemical Co Ltd | PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNS THEREFROM, ELECTRONIC DEVICE PRODUCED THEREWITH AND METHOD FOR PRODUCING SAME |
| US6291619B1 (en) | 1997-01-30 | 2001-09-18 | Hitachi Chemical Co., Ltd | Photosensitive resin composition, method for forming pattern therefrom, electronic devices produced by using the same, and method for production thereof |
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