JPH08153711A - エッチング装置 - Google Patents

エッチング装置

Info

Publication number
JPH08153711A
JPH08153711A JP6315473A JP31547394A JPH08153711A JP H08153711 A JPH08153711 A JP H08153711A JP 6315473 A JP6315473 A JP 6315473A JP 31547394 A JP31547394 A JP 31547394A JP H08153711 A JPH08153711 A JP H08153711A
Authority
JP
Japan
Prior art keywords
chamber
etching
substrate
fluoride gas
halogen fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6315473A
Other languages
English (en)
Japanese (ja)
Inventor
Shunpei Yamazaki
舜平 山崎
Hideomi Suzawa
英臣 須沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP6315473A priority Critical patent/JPH08153711A/ja
Priority to TW084112514A priority patent/TW279249B/zh
Priority to CN95121846A priority patent/CN1128893C/zh
Priority to KR1019950044538A priority patent/KR100313386B1/ko
Priority to CNB2006100054399A priority patent/CN100481466C/zh
Publication of JPH08153711A publication Critical patent/JPH08153711A/ja
Priority to CNB991107772A priority patent/CN1251331C/zh
Priority to CN99117536A priority patent/CN1248787A/zh
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
JP6315473A 1994-11-26 1994-11-26 エッチング装置 Withdrawn JPH08153711A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6315473A JPH08153711A (ja) 1994-11-26 1994-11-26 エッチング装置
TW084112514A TW279249B (da) 1994-11-26 1995-11-23
CN95121846A CN1128893C (zh) 1994-11-26 1995-11-25 腐蚀设备
KR1019950044538A KR100313386B1 (ko) 1994-11-26 1995-11-25 에칭장치
CNB2006100054399A CN100481466C (zh) 1994-11-26 1995-11-25 半导体器件
CNB991107772A CN1251331C (zh) 1994-11-26 1999-08-05 半导体器件
CN99117536A CN1248787A (zh) 1994-11-26 1999-08-05 制造半导体器件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6315473A JPH08153711A (ja) 1994-11-26 1994-11-26 エッチング装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004068714A Division JP3958294B2 (ja) 2004-03-11 2004-03-11 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
JPH08153711A true JPH08153711A (ja) 1996-06-11

Family

ID=18065785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6315473A Withdrawn JPH08153711A (ja) 1994-11-26 1994-11-26 エッチング装置

Country Status (4)

Country Link
JP (1) JPH08153711A (da)
KR (1) KR100313386B1 (da)
CN (4) CN1128893C (da)
TW (1) TW279249B (da)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140153A (ja) * 2002-10-17 2004-05-13 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP2010199570A (ja) * 2009-01-28 2010-09-09 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法及び表示装置の作製方法
KR101225312B1 (ko) * 2005-12-16 2013-01-22 엘지디스플레이 주식회사 프로세스 장치
US8382940B2 (en) 2002-06-28 2013-02-26 Robert Bosch Gmbh Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device
JP2013088541A (ja) * 2011-10-17 2013-05-13 Hoya Corp 転写用マスクの製造方法
US8728882B2 (en) 2012-03-30 2014-05-20 Samsung Display Co., Ltd. Manufacturing method for thin film transistor array panel
WO2016056300A1 (ja) * 2014-10-10 2016-04-14 関東電化工業株式会社 ケイ素化合物用エッチングガス組成物及びエッチング方法
KR20190131428A (ko) 2018-05-16 2019-11-26 도쿄엘렉트론가부시키가이샤 실리콘 함유막의 에칭 방법, 컴퓨터 기억 매체, 및 실리콘 함유막의 에칭 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336975B2 (ja) * 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
CN102074157B (zh) * 2011-01-07 2012-01-11 华南理工大学 一种敷铜板腐蚀设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
JPH0410621A (ja) * 1990-04-27 1992-01-14 Kawasaki Steel Corp 窒化シリコン膜のエッチング処理方法、及びその装置
JPH06103682B2 (ja) * 1990-08-09 1994-12-14 富士通株式会社 光励起ドライクリーニング方法および装置
JPH04196529A (ja) * 1990-11-28 1992-07-16 Toshiba Corp プラズマ処理装置
JPH04206822A (ja) * 1990-11-30 1992-07-28 Mitsubishi Electric Corp 半導体製造装置
JP3176118B2 (ja) * 1992-03-27 2001-06-11 株式会社東芝 多室型基板処理装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8382940B2 (en) 2002-06-28 2013-02-26 Robert Bosch Gmbh Device and method for producing chlorine trifluoride and system for etching semiconductor substrates using this device
JP2004140153A (ja) * 2002-10-17 2004-05-13 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
KR101225312B1 (ko) * 2005-12-16 2013-01-22 엘지디스플레이 주식회사 프로세스 장치
JP2010199570A (ja) * 2009-01-28 2010-09-09 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法及び表示装置の作製方法
JP2013088541A (ja) * 2011-10-17 2013-05-13 Hoya Corp 転写用マスクの製造方法
US8728882B2 (en) 2012-03-30 2014-05-20 Samsung Display Co., Ltd. Manufacturing method for thin film transistor array panel
WO2016056300A1 (ja) * 2014-10-10 2016-04-14 関東電化工業株式会社 ケイ素化合物用エッチングガス組成物及びエッチング方法
JPWO2016056300A1 (ja) * 2014-10-10 2017-07-27 関東電化工業株式会社 ケイ素化合物用エッチングガス組成物及びエッチング方法
GB2551017A (en) * 2014-10-10 2017-12-06 Kanto Denka Kogyo Kk Etching gas composition for silicon compound, and etching method
TWI648429B (zh) * 2014-10-10 2019-01-21 Kanto Denka Kogyo Co., Ltd. 矽化合物用蝕刻氣體組成物及蝕刻方法
US10287499B2 (en) 2014-10-10 2019-05-14 Kanto Denka Kogyo Co., Ltd. Etching gas composition for silicon compound, and etching method
GB2551017B (en) * 2014-10-10 2020-03-11 Kanto Denka Kogyo Kk Etching gas composition for silicon compound, and etching method
KR20190131428A (ko) 2018-05-16 2019-11-26 도쿄엘렉트론가부시키가이샤 실리콘 함유막의 에칭 방법, 컴퓨터 기억 매체, 및 실리콘 함유막의 에칭 장치
US11189498B2 (en) 2018-05-16 2021-11-30 Tokyo Electron Limited Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

Also Published As

Publication number Publication date
CN1248787A (zh) 2000-03-29
CN1825600A (zh) 2006-08-30
CN1245976A (zh) 2000-03-01
CN1136599A (zh) 1996-11-27
CN1128893C (zh) 2003-11-26
TW279249B (da) 1996-06-21
KR960019566A (ko) 1996-06-17
CN1251331C (zh) 2006-04-12
CN100481466C (zh) 2009-04-22
KR100313386B1 (ko) 2003-06-12

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