JPH08181135A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH08181135A JPH08181135A JP6320786A JP32078694A JPH08181135A JP H08181135 A JPH08181135 A JP H08181135A JP 6320786 A JP6320786 A JP 6320786A JP 32078694 A JP32078694 A JP 32078694A JP H08181135 A JPH08181135 A JP H08181135A
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- film
- insulating film
- firing
- oxide
- oxygen
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
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- Formation Of Insulating Films (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】
【目的】 絶縁性が高く、かつ、界面付近での漏れ電流
の少ない高絶縁性誘電体膜を有する半導体装置の製造方
法を提供する。 【構成】 成膜された酸化絶縁膜に対して１０００℃以
下の温度で、最初に水蒸気と酸素との混合ガスによる酸
化する。これにより、膜表面には可動イオンが残留した
状態となる。次に、その残留イオンを除去するために、
熱酸化プロセスを施す。このようにすることにより、酸
化絶縁膜の内層部の酸化の促進と、膜表層部の絶縁性の
向上が行われる。よって、耐圧特性に優れ、表面に漏れ
電流の少ない高絶縁性誘電膜が得られる。
の少ない高絶縁性誘電体膜を有する半導体装置の製造方
法を提供する。 【構成】 成膜された酸化絶縁膜に対して１０００℃以
下の温度で、最初に水蒸気と酸素との混合ガスによる酸
化する。これにより、膜表面には可動イオンが残留した
状態となる。次に、その残留イオンを除去するために、
熱酸化プロセスを施す。このようにすることにより、酸
化絶縁膜の内層部の酸化の促進と、膜表層部の絶縁性の
向上が行われる。よって、耐圧特性に優れ、表面に漏れ
電流の少ない高絶縁性誘電膜が得られる。
Description
【０００１】
【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、特に高絶縁性誘電膜を有する半導体装置の製造
方法に関する。
に関し、特に高絶縁性誘電膜を有する半導体装置の製造
方法に関する。
【０００２】
【従来の技術】半導体装置や液晶表示装置においては、
回路の絶縁性を確保するために、または半導体メモリー
の記憶容量やアクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘導体用に、例えば酸化シリコン、
窒化シリコン、酸化アルミニウムまたは酸化タンタルの
ような絶縁膜または誘電体膜が使用されている。
回路の絶縁性を確保するために、または半導体メモリー
の記憶容量やアクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘導体用に、例えば酸化シリコン、
窒化シリコン、酸化アルミニウムまたは酸化タンタルの
ような絶縁膜または誘電体膜が使用されている。
【０００３】近年、半導体装置の高密度化や高集積化、
また液晶表示装置の高精細化が進むにつれ、その構成要
素の１つである、絶縁膜もしくは誘電体膜の微細化が課
題となる。上記微細化を行った場合は、誘電体の面積が
減少することになるが、当然それに伴って静電容量も減
少する。したがって、同等の静電容量を得るためには、
誘電体の膜厚を薄くするか誘電体の誘電率を上げなけれ
ばならない。しかしながら、膜厚を薄くすると耐圧が低
下するため、信頼性の問題から薄膜化には限界がある。
また液晶表示装置の高精細化が進むにつれ、その構成要
素の１つである、絶縁膜もしくは誘電体膜の微細化が課
題となる。上記微細化を行った場合は、誘電体の面積が
減少することになるが、当然それに伴って静電容量も減
少する。したがって、同等の静電容量を得るためには、
誘電体の膜厚を薄くするか誘電体の誘電率を上げなけれ
ばならない。しかしながら、膜厚を薄くすると耐圧が低
下するため、信頼性の問題から薄膜化には限界がある。
【０００４】そこで、例えば高誘電率の酸化タンタルが
注目されている。この酸化タンタル膜は、その製造方法
として、例えば陽極酸化法などを用いる場合は、電子性
トラップや可動イオンの空間電荷分極の存在により、酸
化シリコン膜等に比べ漏れ電流も多く絶縁性が悪いこと
が知られている。また、製造方法に反応性スパッタ法を
用いる場合では、低級酸化物の増加により漏れ電流が増
加することが知られている。
注目されている。この酸化タンタル膜は、その製造方法
として、例えば陽極酸化法などを用いる場合は、電子性
トラップや可動イオンの空間電荷分極の存在により、酸
化シリコン膜等に比べ漏れ電流も多く絶縁性が悪いこと
が知られている。また、製造方法に反応性スパッタ法を
用いる場合では、低級酸化物の増加により漏れ電流が増
加することが知られている。
【０００５】そのため、この酸化タンタル膜を半導体メ
モリーの記憶容量に用いた場合は消費電力の増加をもた
らし、また、アクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘電体もしくはガラス基板の保護絶
縁膜として用いた場合には表示不良につながるといった
不具合が生じてしまう。
モリーの記憶容量に用いた場合は消費電力の増加をもた
らし、また、アクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘電体もしくはガラス基板の保護絶
縁膜として用いた場合には表示不良につながるといった
不具合が生じてしまう。
【０００６】一方、酸化タンタルをはじめとして酸化ア
ルミニウムなどの金属酸化膜に対し、より高い絶縁性を
比較的簡単に与える試みとして、絶縁性誘電膜を成膜し
た後の後処理に熱酸化を用いる方法がある。
ルミニウムなどの金属酸化膜に対し、より高い絶縁性を
比較的簡単に与える試みとして、絶縁性誘電膜を成膜し
た後の後処理に熱酸化を用いる方法がある。
【０００７】
【発明が解決しようとする課題】上記の熱酸化法は、１
０００℃以下の温度で水蒸気を含む混合ガスによる熱酸
化方法（以後ウェット焼成と記す）と、上記ウェット焼
成において水蒸気の導入は行わずに乾燥ガスのみで熱酸
化を行う熱酸化法（以後ドライ焼成と記す）の２つに大
別される。このようなウェット焼成とドライ焼成とは、
従来においては、一般に熱酸化を行うとき、いずれか一
方が採用されている。
０００℃以下の温度で水蒸気を含む混合ガスによる熱酸
化方法（以後ウェット焼成と記す）と、上記ウェット焼
成において水蒸気の導入は行わずに乾燥ガスのみで熱酸
化を行う熱酸化法（以後ドライ焼成と記す）の２つに大
別される。このようなウェット焼成とドライ焼成とは、
従来においては、一般に熱酸化を行うとき、いずれか一
方が採用されている。
【０００８】しかしながら、ウェット焼成を行う場合
は、酸素の空孔欠陥を補う酸化種がドライ焼成に比べて
絶縁膜に対し高い拡散速度をもっているため、膜の内層
部まで酸素の補給を促進できるが、膜の表層部に可動イ
オンが残留しやすく、膜そのものの絶縁性は向上する
が、膜表層部の絶縁性を保つことができず、その上に成
膜を施した場合、膜の界面での漏れ電流が増加してしま
うという不具合が生じてしまう。
は、酸素の空孔欠陥を補う酸化種がドライ焼成に比べて
絶縁膜に対し高い拡散速度をもっているため、膜の内層
部まで酸素の補給を促進できるが、膜の表層部に可動イ
オンが残留しやすく、膜そのものの絶縁性は向上する
が、膜表層部の絶縁性を保つことができず、その上に成
膜を施した場合、膜の界面での漏れ電流が増加してしま
うという不具合が生じてしまう。
【０００９】一方、ドライ焼成を行う場合は、酸化種の
膜に対する拡散速度が低下するため、膜内層部の酸素の
補給が不完全なものとなる。そのため、膜全体としての
絶縁性が低下し耐圧特性も悪くなる。
膜に対する拡散速度が低下するため、膜内層部の酸素の
補給が不完全なものとなる。そのため、膜全体としての
絶縁性が低下し耐圧特性も悪くなる。
【００１０】本発明は、このような従来技術の課題を解
決すべくなされたものであり、絶縁性が高く、かつ、界
面付近での漏れ電流の少ない高絶縁性誘電体膜を有する
半導体装置の製造方法を提供することを目的とする。
決すべくなされたものであり、絶縁性が高く、かつ、界
面付近での漏れ電流の少ない高絶縁性誘電体膜を有する
半導体装置の製造方法を提供することを目的とする。
【００１１】
【課題を解決するための手段】本発明の半導体装置の製
造方法は、基板上に形成した酸化絶縁膜を、１０００℃
以下の温度で水蒸気と酸素とを含む混合ガスにより酸化
する工程と、酸化された酸化絶縁膜に存在する残留イオ
ンを除去して高絶縁性誘電膜にする工程とを具備し、そ
のことにより上記目的が達成される。
造方法は、基板上に形成した酸化絶縁膜を、１０００℃
以下の温度で水蒸気と酸素とを含む混合ガスにより酸化
する工程と、酸化された酸化絶縁膜に存在する残留イオ
ンを除去して高絶縁性誘電膜にする工程とを具備し、そ
のことにより上記目的が達成される。
【００１２】
【作用】本発明にあっては、成膜された酸化絶縁膜に対
して１０００℃以下の温度で、最初に水蒸気と酸素との
混合ガスによる酸化する。これにより、膜表面には可動
イオンが残留した状態となる。次に、その残留イオンを
除去するために、熱酸化プロセスを施す。このようにす
ることにより、酸化絶縁膜の内層部の酸化の促進と、膜
表層部の絶縁性の向上が行われる。よって、耐圧特性に
優れ、表面に漏れ電流の少ない高絶縁性誘電膜が得られ
る。
して１０００℃以下の温度で、最初に水蒸気と酸素との
混合ガスによる酸化する。これにより、膜表面には可動
イオンが残留した状態となる。次に、その残留イオンを
除去するために、熱酸化プロセスを施す。このようにす
ることにより、酸化絶縁膜の内層部の酸化の促進と、膜
表層部の絶縁性の向上が行われる。よって、耐圧特性に
優れ、表面に漏れ電流の少ない高絶縁性誘電膜が得られ
る。
【００１３】
【実施例】以下に、本発明の実施例を具体的に説明す
る。
る。
【００１４】本発明の適用例として、例えば液晶表示装
置のガラス基板上に設けられる薄膜トランジスタにおい
て、そのガラス基板上にベースコート絶縁膜が設けられ
る場合を一例に挙げて述べる。この場合、液晶表示装置
の表示品位を向上させるためには、そのベースコート絶
縁膜の性能として、ベースコート絶縁膜上に形成された
電極間の漏れ電流を防止し得るだけの絶縁性が要求され
る。
置のガラス基板上に設けられる薄膜トランジスタにおい
て、そのガラス基板上にベースコート絶縁膜が設けられ
る場合を一例に挙げて述べる。この場合、液晶表示装置
の表示品位を向上させるためには、そのベースコート絶
縁膜の性能として、ベースコート絶縁膜上に形成された
電極間の漏れ電流を防止し得るだけの絶縁性が要求され
る。
【００１５】そこで、上記の内容を考慮し、ベースコー
ト絶縁膜に酸化タンタルと酸化アルミニウムとを用いた
ときの適用例を以下の実施例１と実施例２として記述す
る。 （実施例１）本実施例１は、ベースコート絶縁膜が酸化
タンタルの場合である。
ト絶縁膜に酸化タンタルと酸化アルミニウムとを用いた
ときの適用例を以下の実施例１と実施例２として記述す
る。 （実施例１）本実施例１は、ベースコート絶縁膜が酸化
タンタルの場合である。
【００１６】サンプルとしては、ガラス基板上に、スパ
ッタリングにより五酸化タンタルを３０００〜４０００
オングストローム形成したものを用いた。その基板に対
し、図１に示す本発明の熱処理を施した。具体的には、
常温から酸化タンタルが多結晶化を起こさない５００〜
６００℃まで昇温する間において、１５０℃〜６００℃
の間（図１におけるの期間）で水蒸気と酸素との混合
ガスを焼成炉の中に導入し、その後、その高温状態を１
〜２時間保持する間（図１におけるの期間）に、連続
して酸素の乾燥ガスを焼成炉の中に導入して焼成を行っ
た。その後、常温まで冷却を行った。
ッタリングにより五酸化タンタルを３０００〜４０００
オングストローム形成したものを用いた。その基板に対
し、図１に示す本発明の熱処理を施した。具体的には、
常温から酸化タンタルが多結晶化を起こさない５００〜
６００℃まで昇温する間において、１５０℃〜６００℃
の間（図１におけるの期間）で水蒸気と酸素との混合
ガスを焼成炉の中に導入し、その後、その高温状態を１
〜２時間保持する間（図１におけるの期間）に、連続
して酸素の乾燥ガスを焼成炉の中に導入して焼成を行っ
た。その後、常温まで冷却を行った。
【００１７】また、比較例として、本実施例１と同様の
炉内温度に変化させた状態で、図２に示すようにしてウ
ェット焼成を行い、図３に示すようにしてドライ焼成を
行った。ウェット焼成は、１５０〜６００℃の間（図２
におけるの期間）で水蒸気と酸素との混合ガスを焼成
炉の中に導入して焼成を行った。一方、ドライ焼成は、
１５０〜６００℃の間（図３におけるの期間）で酸素
の乾燥ガスを焼成炉の中に導入して焼成を行った。
炉内温度に変化させた状態で、図２に示すようにしてウ
ェット焼成を行い、図３に示すようにしてドライ焼成を
行った。ウェット焼成は、１５０〜６００℃の間（図２
におけるの期間）で水蒸気と酸素との混合ガスを焼成
炉の中に導入して焼成を行った。一方、ドライ焼成は、
１５０〜６００℃の間（図３におけるの期間）で酸素
の乾燥ガスを焼成炉の中に導入して焼成を行った。
【００１８】次に、以上のようにしてガラス基板上に形
成された、本発明を含めた３種のベースコート絶縁膜の
上に、図４に示すように、電極３と絶縁膜４と電極５と
をベースコート絶縁膜２側からこの順に形成し、第１の
評価を行った。なお、図４中の１は、ガラス基板であ
る。その第１の評価としては、電極３と５に２０Ｖの電
圧を加えたときのリーク電流を測定した。この測定は、
評価対象のベースコート絶縁膜２と絶縁膜３との界面の
絶縁性、つまりベースコート絶縁膜２の表層部の絶縁特
性に関するものであり、この部分のリーク電流が時間に
対し大幅な増加傾向を示すと、絵素の補助容量電極等と
のリークを引き起こし表示不良の原因となる。
成された、本発明を含めた３種のベースコート絶縁膜の
上に、図４に示すように、電極３と絶縁膜４と電極５と
をベースコート絶縁膜２側からこの順に形成し、第１の
評価を行った。なお、図４中の１は、ガラス基板であ
る。その第１の評価としては、電極３と５に２０Ｖの電
圧を加えたときのリーク電流を測定した。この測定は、
評価対象のベースコート絶縁膜２と絶縁膜３との界面の
絶縁性、つまりベースコート絶縁膜２の表層部の絶縁特
性に関するものであり、この部分のリーク電流が時間に
対し大幅な増加傾向を示すと、絵素の補助容量電極等と
のリークを引き起こし表示不良の原因となる。
【００１９】図５は、そのリーク電流の測定結果を示す
グラフである。横軸に時間Ｔ（ｈｏｕｒ）をとり、縦軸
に電流Ｉ（Ａ／ｍｍ2）をとっている。図中の（ａ）は
ウェット焼成の場合、（ｂ）は本実施例の場合、（ｃ）
はドライ焼成の場合である。
グラフである。横軸に時間Ｔ（ｈｏｕｒ）をとり、縦軸
に電流Ｉ（Ａ／ｍｍ2）をとっている。図中の（ａ）は
ウェット焼成の場合、（ｂ）は本実施例の場合、（ｃ）
はドライ焼成の場合である。
【００２０】リーク電流の変化を見ると、本実施例によ
る処理では、ドライ焼成とほぼ同等のレベルでリーク電
流が減少傾向を示しており、水蒸気と酸素との混合ガス
を導入したことによる、膜表層部における可動イオンの
残留がないことがわかる。
る処理では、ドライ焼成とほぼ同等のレベルでリーク電
流が減少傾向を示しており、水蒸気と酸素との混合ガス
を導入したことによる、膜表層部における可動イオンの
残留がないことがわかる。
【００２１】更に、図６に示すような液晶パネルを作製
して第２の評価を行った。この液晶パネルは、上記ガラ
ス基板１の上に形成されたベースコート絶縁膜２の上
に、電極１３、二層の絶縁膜１４と１５および配向膜１
６を形成したものと、別のガラス基板１の上に電極１８
と配向膜１６とがこの順に形成されたものとを、間に液
晶材料１７を挟んで対向配設した構造である。第２の評
価の内容としては、液晶材料１７の電流効果を利用して
電極１３と１８との間に０秒から３０秒まで−４Ｖの電
圧を印加し、３０秒から１００秒まで電圧を印加せずに
放置した時の、隣合う電極１３同士の間にチャージされ
る電荷について定性的に評価を行った。つまり、評価対
象であるベースコート絶縁膜２の絶縁性が低いと、隣合
う電極１３同士の間にリーク電流が生じ電荷がチャージ
されることにより、図６中に示す透過率測定領域にも電
圧がかかることになり、液晶の透過率に変化が起こる。
このような電荷のチャージが起こると、液晶の異常配向
の原因となる可能性が高く、表示不良につながることが
ある。
して第２の評価を行った。この液晶パネルは、上記ガラ
ス基板１の上に形成されたベースコート絶縁膜２の上
に、電極１３、二層の絶縁膜１４と１５および配向膜１
６を形成したものと、別のガラス基板１の上に電極１８
と配向膜１６とがこの順に形成されたものとを、間に液
晶材料１７を挟んで対向配設した構造である。第２の評
価の内容としては、液晶材料１７の電流効果を利用して
電極１３と１８との間に０秒から３０秒まで−４Ｖの電
圧を印加し、３０秒から１００秒まで電圧を印加せずに
放置した時の、隣合う電極１３同士の間にチャージされ
る電荷について定性的に評価を行った。つまり、評価対
象であるベースコート絶縁膜２の絶縁性が低いと、隣合
う電極１３同士の間にリーク電流が生じ電荷がチャージ
されることにより、図６中に示す透過率測定領域にも電
圧がかかることになり、液晶の透過率に変化が起こる。
このような電荷のチャージが起こると、液晶の異常配向
の原因となる可能性が高く、表示不良につながることが
ある。
【００２２】図７は、その評価結果を示すグラフであ
り、（ａ）はウェット焼成の場合、（ｂ）は本実施例の
場合、（ｃ）はドライ焼成の場合である。
り、（ａ）はウェット焼成の場合、（ｂ）は本実施例の
場合、（ｃ）はドライ焼成の場合である。
【００２３】測定結果より、本実施例の焼成条件では透
過率に変化は起こっていない。これは隣合う電極１３同
士の間に電荷のチャージが起きず、ウェット焼成と同レ
ベル程度まで膜内層部の酸素の補給が促進したといえ
る。
過率に変化は起こっていない。これは隣合う電極１３同
士の間に電荷のチャージが起きず、ウェット焼成と同レ
ベル程度まで膜内層部の酸素の補給が促進したといえ
る。
【００２４】以上の２種類の第１、第２の評価の結果よ
り、本実施例による場合には、酸化絶縁膜の膜内層部の
酸素補給の促進と共に、膜表層部の可動イオンの除去を
行うことが可能となる。したがって、本発明は画期的な
方法といえる。
り、本実施例による場合には、酸化絶縁膜の膜内層部の
酸素補給の促進と共に、膜表層部の可動イオンの除去を
行うことが可能となる。したがって、本発明は画期的な
方法といえる。
【００２５】（実施例２）本実施例２は、ベースコート
絶縁膜が酸化アルミニウムの場合である。
絶縁膜が酸化アルミニウムの場合である。
【００２６】サンプルとしては、ガラス基板上に、スパ
ッタリングにより酸化アルミニウムを３０００〜４００
０オングストローム形成したものを用いた。その基板に
対し、実施例１と同様にして本発明を含む３種類の焼成
を施した。その後、以上のように焼成を行ったものに対
し、実施例１と同様の２種類の第１、第２の評価を行っ
た。
ッタリングにより酸化アルミニウムを３０００〜４００
０オングストローム形成したものを用いた。その基板に
対し、実施例１と同様にして本発明を含む３種類の焼成
を施した。その後、以上のように焼成を行ったものに対
し、実施例１と同様の２種類の第１、第２の評価を行っ
た。
【００２７】図８は、図４に示した状態で第１の評価を
行った結果であり、図９は図６に示した液晶パネルにし
た状態で第２の評価を行った結果である。両図とも、
（ａ）がウェット焼成の場合、（ｂ）が本実施例２の場
合、（ｃ）がドライ焼成の場合である。
行った結果であり、図９は図６に示した液晶パネルにし
た状態で第２の評価を行った結果である。両図とも、
（ａ）がウェット焼成の場合、（ｂ）が本実施例２の場
合、（ｃ）がドライ焼成の場合である。
【００２８】これら図８および図９より理解されるよう
に、酸化タンタルの場合と同様に本発明の優位性がうか
がえる。
に、酸化タンタルの場合と同様に本発明の優位性がうか
がえる。
【００２９】なお、上記各実施例において焼成炉の最高
加熱温度を６００℃としているが、これはガラス基板の
歪点からくる耐加熱温度と、金属酸化膜が非晶質から多
結晶化が起こらないための最高温度を考慮したからであ
り、本発明は基板の耐加熱温度がもっと高い場合、かつ
膜の結晶化が起こる温度を上げる処理を施した場合によ
り高い加熱温度で加熱することが可能となる。その場合
でも、加熱温度は１０００℃以下に限定する。その理由
は、生産上のボトルネックとなる昇温、降温に要する時
間をできるだけ削減し装置処理能力を向上させること
と、プロセスにおける消費エネルギーの増大を防ぐこと
で生産コストの低減を図るためである。
加熱温度を６００℃としているが、これはガラス基板の
歪点からくる耐加熱温度と、金属酸化膜が非晶質から多
結晶化が起こらないための最高温度を考慮したからであ
り、本発明は基板の耐加熱温度がもっと高い場合、かつ
膜の結晶化が起こる温度を上げる処理を施した場合によ
り高い加熱温度で加熱することが可能となる。その場合
でも、加熱温度は１０００℃以下に限定する。その理由
は、生産上のボトルネックとなる昇温、降温に要する時
間をできるだけ削減し装置処理能力を向上させること
と、プロセスにおける消費エネルギーの増大を防ぐこと
で生産コストの低減を図るためである。
【００３０】また、上記各実施例において、残留イオン
を除去する処理方法として酸素ガスを導入する方法を用
いているが、ＵＶオゾン処理や酸素プラズマ処理などの
方法も採用することが可能である。但し、それに伴う装
置および運用コストの増加や処理プロセスの複雑化とい
う点で考慮すると、上述した各実施例のように単純焼成
を基本プロセスとして用いる場合の方が上記の点での優
位性が認められる。
を除去する処理方法として酸素ガスを導入する方法を用
いているが、ＵＶオゾン処理や酸素プラズマ処理などの
方法も採用することが可能である。但し、それに伴う装
置および運用コストの増加や処理プロセスの複雑化とい
う点で考慮すると、上述した各実施例のように単純焼成
を基本プロセスとして用いる場合の方が上記の点での優
位性が認められる。
【００３１】また、上記各実施例では液晶表示装置のガ
ラス基板上に設けられる薄膜トランジスタにおいて、そ
のガラス基板上にベースコート絶縁膜が設けられる場合
を一例に挙げて説明しているが、本発明はこの例に限ら
ず、基板上に形成された絶縁膜が高絶縁性を必要とする
総ての場合に適用できる。
ラス基板上に設けられる薄膜トランジスタにおいて、そ
のガラス基板上にベースコート絶縁膜が設けられる場合
を一例に挙げて説明しているが、本発明はこの例に限ら
ず、基板上に形成された絶縁膜が高絶縁性を必要とする
総ての場合に適用できる。
【００３２】
【発明の効果】以上詳述したように本発明による場合に
は、酸化絶縁膜形成後の後処理として１０００℃以下の
温度で水蒸気と酸素とを含む混合ガスにより酸化する工
程と、残留イオンを除去する工程とを連続して行うこと
により、従来の熱酸化法では得られなかった、膜表層部
に残留可動イオンがなく、膜内層部の空孔欠陥を十分に
酸素で補った高絶縁性の酸化絶縁膜が、比較的簡単な方
法によって得られるという効果がある。従って、本発明
によれば、酸化絶縁膜を有した半導体装置をはじめ、半
導体装置を有した液晶表示装置の品質および製造歩留り
を比較的容易に、かつ、より単純なプロセスで向上させ
ることができる。
は、酸化絶縁膜形成後の後処理として１０００℃以下の
温度で水蒸気と酸素とを含む混合ガスにより酸化する工
程と、残留イオンを除去する工程とを連続して行うこと
により、従来の熱酸化法では得られなかった、膜表層部
に残留可動イオンがなく、膜内層部の空孔欠陥を十分に
酸素で補った高絶縁性の酸化絶縁膜が、比較的簡単な方
法によって得られるという効果がある。従って、本発明
によれば、酸化絶縁膜を有した半導体装置をはじめ、半
導体装置を有した液晶表示装置の品質および製造歩留り
を比較的容易に、かつ、より単純なプロセスで向上させ
ることができる。
【図１】本実施例１および２により、酸化絶縁膜に対し
て焼成を行った時の温度プロファイルとガス導入時期と
を示すグラフである。
て焼成を行った時の温度プロファイルとガス導入時期と
を示すグラフである。
【図２】従来法であるウェット焼成により、酸化絶縁膜
に対して焼成を行った時の温度プロファイルとガス導入
時期とを示すグラフである。
に対して焼成を行った時の温度プロファイルとガス導入
時期とを示すグラフである。
【図３】従来法であるドライ焼成により、酸化絶縁膜に
対して焼成を行った時の温度プロファイルとガス導入時
期とを示すグラフである。
対して焼成を行った時の温度プロファイルとガス導入時
期とを示すグラフである。
【図４】実施例１および２において、第１の評価を行う
場合の構成を示す断面図であり、ベースコート絶縁膜２
の表層部の漏れ電流の測定系を示す。
場合の構成を示す断面図であり、ベースコート絶縁膜２
の表層部の漏れ電流の測定系を示す。
【図５】実施例１における第１の評価結果であり、図４
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化タンタルからなるベースコート絶縁膜
２の表層を流れる漏れ電流の経時変化を示すグラフであ
る。
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化タンタルからなるベースコート絶縁膜
２の表層を流れる漏れ電流の経時変化を示すグラフであ
る。
【図６】実施例１および２において、第２の評価を行う
場合の構成である液晶パネルを示す断面図であり、隣合
う電極１３同士の間にチャージされる電荷について、液
晶材料の電流効果による光の散乱を利用して定性評価を
行う測定系を示す。
場合の構成である液晶パネルを示す断面図であり、隣合
う電極１３同士の間にチャージされる電荷について、液
晶材料の電流効果による光の散乱を利用して定性評価を
行う測定系を示す。
【図７】実施例１（ベースコート絶縁膜が酸化タンタ
ル）における第２の評価結果であり、図６の電極１３と
１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を印
加し、３０秒から１００秒まで電圧を印加せずに放置し
たときの、０秒から１００秒までの図６中の透過率測定
領域の透過率の経時変化を示したグラフである。
ル）における第２の評価結果であり、図６の電極１３と
１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を印
加し、３０秒から１００秒まで電圧を印加せずに放置し
たときの、０秒から１００秒までの図６中の透過率測定
領域の透過率の経時変化を示したグラフである。
【図８】実施例２における第１の評価結果であり、図４
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化アルミニウムからなるベースコート絶
縁膜２の表層を流れる漏れ電流の経時変化を示すグラフ
である。
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化アルミニウムからなるベースコート絶
縁膜２の表層を流れる漏れ電流の経時変化を示すグラフ
である。
【図９】実施例２（ベースコート絶縁膜が酸化アルミニ
ウム）における第２の評価結果であり、図６の電極１３
と１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を
印加し、３０秒から１００秒まで電圧を印加せずに放置
したときの、０秒から１００秒までの図６中の透過率測
定領域の透過率の経時変化を示したグラフである。
ウム）における第２の評価結果であり、図６の電極１３
と１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を
印加し、３０秒から１００秒まで電圧を印加せずに放置
したときの、０秒から１００秒までの図６中の透過率測
定領域の透過率の経時変化を示したグラフである。
１ ガラス基板 ２ ベースコート絶縁膜 ３ 電極 ４ 絶縁膜 ５ 電極 １３ 電極 １４ 絶縁膜 １５ 絶縁膜 １６ 配向膜 １７ 液晶材料 １８ 電極
Claims (1)
- 【請求項１】 基板上に形成した酸化絶縁膜を、１００
０℃以下の温度で水蒸気と酸素とを含む混合ガスにより
酸化する工程と、 酸化された酸化絶縁膜に存在する残留イオンを除去して
高絶縁性誘電膜にする工程とを具備する半導体装置の製
造方法。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6320786A JPH08181135A (ja) | 1994-12-22 | 1994-12-22 | 半導体装置の製造方法 |
| KR1019950072368A KR960026379A (ko) | 1994-12-22 | 1995-12-21 | 반도체장치의 제조방법 |
| CN95110000A CN1131343A (zh) | 1994-12-22 | 1995-12-22 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6320786A JPH08181135A (ja) | 1994-12-22 | 1994-12-22 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08181135A true JPH08181135A (ja) | 1996-07-12 |
Family
ID=18125232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6320786A Withdrawn JPH08181135A (ja) | 1994-12-22 | 1994-12-22 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH08181135A (ja) |
| KR (1) | KR960026379A (ja) |
| CN (1) | CN1131343A (ja) |
Cited By (391)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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-
1994
- 1994-12-22 JP JP6320786A patent/JPH08181135A/ja not_active Withdrawn
-
1995
- 1995-12-21 KR KR1019950072368A patent/KR960026379A/ko not_active Ceased
- 1995-12-22 CN CN95110000A patent/CN1131343A/zh active Pending
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Also Published As
| Publication number | Publication date |
|---|---|
| KR960026379A (ko) | 1996-07-22 |
| CN1131343A (zh) | 1996-09-18 |
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