JPH08181402A - Method for manufacturing two-layer flexible substrate - Google Patents
Method for manufacturing two-layer flexible substrateInfo
- Publication number
- JPH08181402A JPH08181402A JP33651194A JP33651194A JPH08181402A JP H08181402 A JPH08181402 A JP H08181402A JP 33651194 A JP33651194 A JP 33651194A JP 33651194 A JP33651194 A JP 33651194A JP H08181402 A JPH08181402 A JP H08181402A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- copper
- substrate
- film
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
(57)【要約】
【目的】 5μm前後の極めて薄い厚さの銅被膜を形成
した場合においてもピンホールが生成しないような2層
フレキシブル基板の製造方法を提供することを目的とす
るものである。
【構成】 絶縁体フィルムの片面または両面に接着剤を
介さずに直接にニッケル層を下地金属層として形成し、
さらに該下地金属層上に薄膜の銅層を形成した基板の該
ニッケル層または銅層上にさらに銅の導体層を形成した
後、サブトラクティブ法またはセミアディティブ法によ
ってプリント配線板を製造する方法において、該下地金
属層および薄膜の銅層を形成した後の基板を、無機アル
カリ溶液および/または有機アルカリ溶液で処理した
後、該基板表面に無電解銅めっき被膜を0.01μm以
上の厚さに形成し、さらに該無電解銅めっき被膜上に銅
の導体層を形成することを特徴とする2層フレキシブル
基板の製造方法。(57) [Abstract] [Purpose] An object of the present invention is to provide a method for manufacturing a two-layer flexible substrate in which pinholes are not formed even when a copper coating having an extremely thin thickness of about 5 μm is formed. . [Structure] A nickel layer is directly formed as a base metal layer on one or both sides of an insulating film without an adhesive.
A method for producing a printed wiring board by a subtractive method or a semi-additive method after further forming a copper conductor layer on the nickel layer or the copper layer of a substrate on which a thin copper layer is formed on the underlying metal layer After treating the substrate after forming the underlying metal layer and the thin copper layer with an inorganic alkaline solution and / or an organic alkaline solution, an electroless copper plating film is formed on the surface of the substrate to a thickness of 0.01 μm or more. A method for producing a two-layer flexible substrate, which comprises forming and further forming a copper conductor layer on the electroless copper plating film.
Description
【0001】[0001]
【産業上の利用分野】本発明は2層フレキシブル基板の
製造方法に関する。FIELD OF THE INVENTION The present invention relates to a method for manufacturing a two-layer flexible substrate.
【0002】[0002]
【従来の技術】フレキシブル配線板用の基板は、絶縁体
フィルムに接着剤を用いて銅箔を貼り合わせ、サブトラ
クティブ法によって所望の配線パターンを形成する3層
フレキシブル基板と、絶縁体フィルム上に直接下地金属
層を設けた基板に導体金属層を形成した後サブトラクテ
ィブ法またはアディティブ法によって所望の配線パター
ンを形成する2層フレキシブル基板とに大別される。2. Description of the Related Art A substrate for a flexible wiring board is a three-layer flexible substrate for forming a desired wiring pattern by a subtractive method by laminating an insulating film with a copper foil by using an adhesive, and the insulating film. It is roughly classified into a two-layer flexible substrate in which a conductor metal layer is directly formed on a substrate on which a base metal layer is provided and then a desired wiring pattern is formed by a subtractive method or an additive method.
【0003】そして現在においては、製造工程が簡単
で、低コストで製造できる3層フレキシブル配線基板が
一般的である。しかしながら、近年電子機器の高密度化
にともなってフレキシブル配線板においても狭ピッチの
配線幅が要求されている。At the present time, a three-layer flexible wiring board which has a simple manufacturing process and can be manufactured at low cost is generally used. However, in recent years, with the increase in density of electronic devices, a flexible wiring board is required to have a narrow pitch wiring width.
【0004】しかし3層フレキシブル配線板の場合に
は、エッチングによる配線部の形成に際してサイドエッ
チングを生ずるために配線断面の形状が裾広がりの台形
となることから、配線間の電気的絶縁性を確保するまで
エッチングを行うと配線ピッチが広くなりすぎてしま
い、従って配線幅の狭ピッチ化には限界があった。However, in the case of a three-layer flexible wiring board, side etching occurs when the wiring portion is formed by etching, so that the shape of the wiring cross section becomes a trapezoid with a widened hem, so that electrical insulation between wirings is secured. If the etching is performed until then, the wiring pitch becomes too wide, and therefore there is a limit to narrowing the wiring width.
【0005】サイドエッチングによる裾広がりは銅の厚
みが厚い程、広がりが大きくなるので、広がりを小さく
して配線幅をより狭ピッチ化するためには、従来一般的
に使用される35μm厚さの銅箔に換えて18μm以下
の可及的に薄い銅箔を用いる必要があった。しかし薄肉
の銅箔、殊に数μm程度の極薄肉の銅箔は、それ自体の
剛性が小さいために搬送などのハンドリング性が悪く、
アルミニウムキャリアを貼り合わせて剛性を高くしなけ
ればならないという問題があった。また膜厚のばらつき
やピンホールや亀裂などの被膜欠陥を生じやすいと言う
欠点もあった。従って銅箔の厚さが薄くなればなる程配
線板の製造が困難になるし、また製造コストも高くなる
ので、3層フレキシブル配線板の長所であるコストメリ
ットがなくなってしまう。The thicker the copper is, the wider the hem spread by side etching becomes. Therefore, in order to reduce the spread and narrow the wiring width, a 35 μm-thick film which is generally used conventionally is used. It was necessary to use a copper foil having a thickness of 18 μm or less as thin as possible instead of the copper foil. However, thin-walled copper foil, especially ultra-thin copper foil with a thickness of about several μm, has low rigidity itself, and therefore has poor handling properties such as transportation.
There is a problem in that the rigidity needs to be increased by bonding aluminum carriers together. There is also a drawback that film defects such as variations in film thickness and pinholes and cracks are likely to occur. Therefore, the thinner the copper foil is, the more difficult it is to manufacture the wiring board, and the higher the manufacturing cost is. Therefore, the advantage of the three-layer flexible wiring board is lost.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、最近に
至り銅導体層の厚さが10μm以下、数μm程度でなく
ては製造できないような狭ピッチ配線幅のフレキシブル
配線板の要求が高くなってきた。そこで最近では2層フ
レキシブル配線板が注目されている。何となれば該2層
フレキシブル配線板は接着剤を施すことなく直接絶縁体
フィルム上に銅被膜層を形成するので基板を薄くできる
上に基板上に形成する銅被膜層も任意の厚さに形成させ
ることができるのでコストを下げることができるからで
ある。However, recently, there has been an increasing demand for a flexible wiring board having a narrow pitch wiring width that cannot be manufactured unless the thickness of the copper conductor layer is 10 μm or less, or about several μm. . Therefore, recently, a two-layer flexible wiring board has attracted attention. What is important is that the two-layer flexible wiring board directly forms the copper coating layer on the insulating film without applying an adhesive, so that the substrate can be made thin and the copper coating layer formed on the substrate can also be formed to an arbitrary thickness. This is because it is possible to reduce the cost.
【0007】この2層フレキシブル基板は、絶縁体フィ
ルム上に乾式または湿式めっきで極めて薄い銅被膜を形
成させるものであるが、市場に流通しているものは殆ど
が乾式めっきを施したものである。This two-layer flexible substrate forms an extremely thin copper film on an insulating film by dry or wet plating, but most of those on the market are those plated with dry plating. .
【0008】この乾式めっきを施した2層フレキシブル
基板においては、絶縁体フィルムと銅被膜との密着性が
悪いことから、一般に絶縁体フィルム上にクロム、酸化
クロム、ニッケルなどの銅以外の金属または金属酸化物
を下地層として50〜200オングストローム程度の厚
さに被着させた後に薄い銅被膜を形成させることによっ
て銅と絶縁体フィルムとの間の密着性を高めることが行
われている。In the two-layer flexible substrate which is dry-plated, the adhesion between the insulator film and the copper coating is poor, so that a metal other than copper, such as chromium, chromium oxide, or nickel, is generally deposited on the insulator film. The adhesion between the copper and the insulator film is increased by depositing a metal oxide as a base layer to a thickness of about 50 to 200 Å and then forming a thin copper film.
【0009】そして通常この下地金属層に形成させる銅
被膜の厚さは、通常0.2〜0.5μm程度であるが、
このようにして形成される薄膜の銅被膜には多数のピン
ホールが生成しやすく、しばしば下地金属層や絶縁体フ
ィルムが露出している場合がある。また下地金属層は前
述したように50〜200オングストロームの厚さしか
ないので、基板に電気銅めっきを行うに際し、硫酸銅な
どの強酸性の電気めっき液に浸漬して通電した場合に溶
解され、絶縁体フィルムが露出してしまうという問題も
あった。従来は、配線部の形成に必要な銅による導電層
被膜の厚みは15〜35μmとされており、このような
かなりの厚さの銅被膜を電気銅めっき法で得る場合に
は、銅被膜は基板に対して垂直方向のみならず水平方向
にも成長するのでピンホールは該被膜によって埋まり、
ピンホールの存在による配線部の欠陥は生じないが、本
発明の目的とするような狭ピッチの配線を得ようとする
場合には、配線部形成のための銅被膜の厚みは10μm
以下、例えば5μm前後と、上記の厚みよりもかなり薄
くしなければならないために、電気銅めっき法により被
膜を形成した場合に被膜の水平方向への成長が足りずピ
ンホールを埋めることができないので配線部の欠陥等の
問題を起こしやすいという問題がある。The thickness of the copper coating formed on the underlying metal layer is usually about 0.2 to 0.5 μm,
A large number of pinholes are likely to be formed in the thin copper film thus formed, and the underlying metal layer and the insulating film are often exposed in some cases. Further, since the underlying metal layer has a thickness of 50 to 200 angstroms as described above, it is dissolved when the substrate is electroplated with copper and is immersed in a strongly acidic electroplating solution such as copper sulfate and is energized, There was also a problem that the insulating film was exposed. Conventionally, the thickness of the conductive layer coating made of copper necessary for forming the wiring portion is 15 to 35 μm, and when a copper coating having such a considerable thickness is obtained by the electrolytic copper plating method, the copper coating is Since the film grows not only in the vertical direction but also in the horizontal direction with respect to the substrate, the pinhole is filled with the film,
Although the defect of the wiring portion does not occur due to the presence of the pinhole, the thickness of the copper coating for forming the wiring portion is 10 μm when the wiring having a narrow pitch as intended for the present invention is to be obtained.
In the following, for example, around 5 μm, which must be considerably thinner than the above-mentioned thickness, when the coating is formed by the electrolytic copper plating method, the growth of the coating in the horizontal direction is insufficient and the pinhole cannot be filled. There is a problem that problems such as defects in the wiring portion are likely to occur.
【0010】例えば、サブトラクティブ法によって配線
形成を行うには、(1)絶縁体基板上に所望の厚さの銅
導体被膜を形成し、(2)該銅被膜上に配線部のみがマ
スキングされ、それ以外の部分における銅被膜が露出す
るように所望の配線パターンを有するレジスト層を設
け、(3)露出している銅被膜をエッチング処理によっ
て除去し、(4)最後にレジスト層を除去することによ
って行われる。従って、前述したように薄い銅被膜の場
合には、ピンホールが配線部にかかっていれば、配線部
はピンホールの位置で欠けることになり配線欠陥となる
ばかりか配線の密着不良を招く原因となりやすい。For example, in order to form a wiring by the subtractive method, (1) a copper conductor coating having a desired thickness is formed on an insulating substrate, and (2) only a wiring portion is masked on the copper coating. A resist layer having a desired wiring pattern is provided so that the copper coating on the other portions is exposed, (3) the exposed copper coating is removed by etching, and (4) the resist layer is finally removed. Done by. Therefore, as described above, in the case of a thin copper film, if the pinhole is in the wiring portion, the wiring portion will be chipped at the position of the pinhole, which not only causes a wiring defect but also causes poor wiring adhesion. It is easy to become.
【0011】本発明は、上記の問題に鑑みてなされたも
のであって、5μm前後の極めて薄い厚さの銅導体被膜
を形成した場合においてもピンホールによる欠陥が発生
しないような2層フレキシブル基板の製造方法を提供す
ることを目的とするものである。The present invention has been made in view of the above problems and is a two-layer flexible substrate in which defects due to pinholes do not occur even when a copper conductor coating having an extremely thin thickness of about 5 μm is formed. It is an object of the present invention to provide a manufacturing method of.
【0012】[0012]
【課題を解決するための手段】本発明者は、該絶縁体フ
ィルム上に下地金属層のニッケル被膜と表面金属層であ
る薄膜の銅被膜を乾式めっき法等により形成した基板上
に、銅の無電解めっきを施し、さらにその上に電気銅め
っき法で銅導体層を形成することによって絶縁体フィル
ムまたは下地金属が露出しているピンホールを減少させ
ることができることを見出して本発明を完成した。The present inventor has found that a copper film formed on the insulating film by a dry plating method or the like is formed by forming a nickel coating of a base metal layer and a thin copper coating of a surface metal layer on the substrate. The present invention was completed by finding that it is possible to reduce the number of pinholes in which the insulating film or the base metal is exposed by performing electroless plating and further forming a copper conductor layer on it by electrolytic copper plating. .
【0013】すなわち上記の課題を解決するための本発
明は、絶縁体フィルムの片面または両面に接着剤を介さ
ずに直接にニッケル層を下地金属層として形成し、さら
に該下地金属層上に薄膜の銅層を形成した基板の該ニッ
ケル層または銅層上にさらに銅の導体層を形成した後、
サブトラクティブ法またはセミアディティブ法によって
プリント配線板を製造する方法において、該下地金属層
および薄膜の銅層を形成した後の基板を、無機アルカリ
溶液および/または有機アルカリ溶液で処理した後、該
基板表面に無電解銅めっき被膜を0.01μm以上の厚
さに形成し、さらに該無電解銅めっき被膜上に銅の導体
層を形成することを特徴とする2層フレキシブル基板の
製造方法である。That is, according to the present invention for solving the above problems, a nickel layer is directly formed as a base metal layer on one side or both sides of an insulating film without an adhesive, and a thin film is further formed on the base metal layer. After further forming a copper conductor layer on the nickel layer or the copper layer of the substrate on which the copper layer is formed,
In a method of manufacturing a printed wiring board by a subtractive method or a semi-additive method, the substrate after forming the underlying metal layer and the thin copper layer is treated with an inorganic alkaline solution and / or an organic alkaline solution, and then the substrate is treated. The method for producing a two-layer flexible substrate is characterized in that an electroless copper plating film is formed on the surface to a thickness of 0.01 μm or more, and a copper conductor layer is further formed on the electroless copper plating film.
【0014】本発明の方法をさらに具体的に説明する
と、ピンホール部分において露出する絶縁体フィルム表
面を例えばヒドラジンおよびエチレンジアミンの混合液
のような有機アルカリ溶液または水酸化カリウム、水酸
化ナトリウムのような無機アルカリ溶液、またはこれら
の混合溶液によって処理して親水化し、次に基板全体に
公知の無電解めっきのための触媒付与を行うことによっ
て、該親水化されている絶縁体フィルム表面とピンホー
ル部分に露出しているニッケル被膜上に触媒を付与し、
次いで無電解めっき法によって銅被膜を形成することで
導体層の厚みを増加させる。このようにすることにより
次工程での電気銅めっき処理に際しての強酸性めっき液
下での通電に際しても銅被膜が溶解することなく容易に
5μm程度の薄膜の健全な電気銅めっき被膜が得られ
る。The method of the present invention will be described more specifically. The surface of the insulating film exposed in the pinhole portion is treated with an organic alkaline solution such as a mixed solution of hydrazine and ethylenediamine or with potassium hydroxide or sodium hydroxide. The surface of the insulating film and the pinholes are hydrophilized by treating the surface of the substrate with an inorganic alkaline solution or a mixed solution thereof to make them hydrophilic, and then applying a known catalyst for electroless plating to the entire substrate. Applying a catalyst on the nickel coating exposed on the
Then, a copper coating is formed by electroless plating to increase the thickness of the conductor layer. By doing so, a thin electrolytic copper plating film of about 5 μm can be easily obtained without dissolving the copper film even when electricity is applied under a strong acid plating solution in the next step of electrolytic copper plating.
【0015】使用される触媒付与溶液は、酸性のパラジ
ウム−錫コロイド溶液や、アルカリ性のパラジウム錯体
溶液。または錫を含まない酸性パラジウム溶液など一般
的なものでよい。また触媒付与法も一般的な方法でよい
が、無電解めっき法の前処理として通常行われているセ
ンシタイジング・アクチベーション法や、キャタリスツ
・アクセレーター法などが簡便であり好ましい方法であ
る。The catalyst-applying solution used is an acidic palladium-tin colloidal solution or an alkaline palladium complex solution. Or, a general one such as an acidic palladium solution containing no tin may be used. Further, the catalyst application method may be a general method, but a sensitizing activation method and a catalyst accelerator method, which are usually performed as a pretreatment of the electroless plating method, are simple and preferable methods.
【0016】また触媒付与に際しての前処理は、特に限
定されるものでないが乾式めっき被膜と湿式めっき被膜
との密着性を図るために脱脂等の処理を手利き行うこと
が好ましい。しかしながら、前処理によってニッケル被
膜や銅被膜が溶解するような条件は避けることが肝要で
ある。The pretreatment for applying the catalyst is not particularly limited, but it is preferable to perform a degreasing treatment or the like in order to improve the adhesion between the dry plating film and the wet plating film. However, it is important to avoid the condition that the nickel film and the copper film are dissolved by the pretreatment.
【0017】なお、本発明において基板の親水化処理を
行うに際してのアルカリ溶液の濃度や処理温度等の処理
条件は、使用されるアルカリ溶液の種類などによって異
なるので、処理に際してはあらかじめ使用アルカリの種
類等応じて実験的に定めておく必要がある。In the present invention, the treatment conditions such as the concentration of the alkali solution and the treatment temperature when the substrate is made hydrophilic are different depending on the kind of the alkali solution used. It is necessary to determine it experimentally according to the above.
【0018】[0018]
【作用】次に本発明の詳細およびその作用についてより
具体的に説明する。Next, the details of the present invention and the operation thereof will be described more specifically.
【0019】ポリイミドフィルムなどの絶縁体フィルム
上に例えば100オングストローム程度の極薄膜のニッ
ケル被膜を乾式めっき法により形成し、さらにその上に
例えば0.3μm程度の薄膜の銅被膜をこれも乾式めっ
き法により形成した基板の表面をヒドラジンとエチルジ
アミン混合溶液のような有機アルカリ溶液、または水酸
化カリウム、水酸化ナトリウムのような無機アルカリ溶
液、あるいはヒドラジンと水酸化カリウムの混合液のよ
うな有機アルカリと無機アルカリの混合溶液によって処
理することにより、ピンホール部分で露出している絶縁
体フィルムの表面は親水化される。次いで無電解めっき
法で行われている触媒付与を行えば、親水化された絶縁
体フィルム上とピンホール部分において露出している該
ニッケル被膜上と最表面の銅被膜上に触媒が付与され
る。そして、このように触媒を付与した基板を所定の条
件で例えば無電解銅めっき液に浸漬すれば、触媒が増や
された部分、すなわち親水化された絶縁体フィルム表面
とニッケル被膜上と銅被膜上とに新たに無電解銅めっき
被膜が形成される。An ultra-thin nickel film of about 100 angstrom is formed on an insulating film such as a polyimide film by a dry plating method, and a thin copper film of about 0.3 μm is also formed on the nickel film by a dry plating method. The surface of the substrate formed by an organic alkali solution such as a mixed solution of hydrazine and ethyldiamine, an inorganic alkali solution such as potassium hydroxide or sodium hydroxide, or an organic alkali such as a mixed solution of hydrazine and potassium hydroxide. By treating with the mixed solution of inorganic alkali, the surface of the insulating film exposed at the pinhole portion is made hydrophilic. Next, when a catalyst is applied by electroless plating, the catalyst is applied on the hydrophilized insulator film, the nickel film exposed in the pinhole portion, and the outermost copper film. . Then, by immersing the substrate thus provided with a catalyst under a predetermined condition, for example, in an electroless copper plating solution, a portion where the catalyst is increased, that is, a hydrophilized insulator film surface, a nickel film, and a copper film An electroless copper-plated film is newly formed on and.
【0020】すなわち、親水化した絶縁体フィルム表面
とニッケル被膜上に新たに銅被膜を形成することで両者
の表面の導電性を高め、また金属層の厚みを増加させる
ことで硫酸銅めっき液を用いた電気銅めっきを行った場
合においても絶縁体フィルムの露出部やニッケル被膜部
分の溶解を起こすことがなくなる。したがってピンホー
ルを埋めることができるのである。電気銅めっき法によ
って5μm〜10μm程度の厚さの銅導体層を形成した
後、従来法によって該銅導体層上に所望の配線パターン
を有するレジスト層を形成し、銅導体層の露出部分をエ
ッチングにより除去し、その後該レジスト層を剥離除去
すれば配線の欠陥部や断線などの欠陥のない導体厚さ5
μm程度の2層フレキシブル配線板が得られる。本発明
の触媒付与法に用いる触媒活性金属としては、無電解め
っき液において添加される錯体化された金属イオン種よ
りも電位的に貴なものであればよい。例えば、金、白
金、銀、パラジウムなどが使用できる。しかし、簡便さ
を考慮すれば、触媒付与液として広く市販されているパ
ラジウム系のものを使用することが好ましい。That is, a copper coating is newly formed on the surface of the hydrophilized insulating film and the nickel coating to enhance the conductivity of both surfaces, and the thickness of the metal layer is increased to form a copper sulfate plating solution. Even when the electrolytic copper plating used is performed, the exposed portion of the insulator film and the nickel coating portion are not dissolved. Therefore, the pinhole can be filled. After forming a copper conductor layer having a thickness of about 5 μm to 10 μm by an electrolytic copper plating method, a resist layer having a desired wiring pattern is formed on the copper conductor layer by a conventional method, and an exposed portion of the copper conductor layer is etched. And then the resist layer is peeled off to obtain a conductor thickness 5 which is free from defects such as wiring defects and disconnections.
A two-layer flexible wiring board of about μm can be obtained. The catalytically active metal used in the catalyst application method of the present invention may be any one that is more noble in potential than the complexed metal ion species added in the electroless plating solution. For example, gold, platinum, silver, palladium or the like can be used. However, from the viewpoint of simplicity, it is preferable to use a widely available palladium-based catalyst-providing liquid.
【0021】本発明において使用される無電解めっき液
の種類としては、触媒として触媒活性金属種を用いてい
るので、めっき液に含まれる金属イオンの種類が金、
銀、白金、パラジウム、銅、ニッケル、コバルト、クロ
ムなどの自己触媒性を有するもので、かつヒドラジン、
ホスフィン酸ナトリウム、ホルマリンなどの還元剤によ
り還元されて金属析出する還元析出型のものが適当であ
る。しかしながら、本発明はピンホール部で露出してい
る絶縁体フィルム上を導電性に改修することと、薄い下
地ニッケル層が電気めっき時に溶解しないようにするこ
とが主たる目的であるので、導電性が良好で比較的作業
性のよい無電解銅めっき液が最も適しているといえる。
この無電解銅めっき被膜の厚さは、電気銅めっきを施す
際に、めっき液によって溶解されない程度の厚さ、例え
ば0.01μm以上の厚さであればよい。As the type of the electroless plating solution used in the present invention, since the catalytically active metal species is used as a catalyst, the type of metal ion contained in the plating solution is gold,
Hydrazine, which has autocatalytic properties such as silver, platinum, palladium, copper, nickel, cobalt, and chromium.
A reduction-precipitation type in which a metal is precipitated by being reduced with a reducing agent such as sodium phosphinate or formalin is suitable. However, the main purpose of the present invention is to repair the insulating film exposed at the pinhole portion to be conductive, and to prevent the thin underlying nickel layer from being dissolved during electroplating. It can be said that the electroless copper plating solution that is good and has relatively good workability is most suitable.
The thickness of this electroless copper plating film may be such that it is not dissolved by the plating solution when performing electrolytic copper plating, for example, 0.01 μm or more.
【0022】[0022]
【実施例】次に本発明の実施例について述べる。 実施例1 厚さ50μmのポリイミドフィルム(東レ・デュポン社
製、「カプトン200V」)を12cm×12cmの大
きさに切り出し、その片面に真空蒸着法によってニッケ
ルを100オングストロームの厚さに被着させ、さらに
その上に真空蒸着法によって銅を0.25μmの厚さに
被着させた基板を作成した。Next, an embodiment of the present invention will be described. Example 1 A polyimide film having a thickness of 50 μm (“Kapton 200V” manufactured by Toray-Dupont Co., Ltd.) was cut into a size of 12 cm × 12 cm, and nickel was deposited on one side thereof by a vacuum deposition method to a thickness of 100 angstrom, Furthermore, a substrate was formed by depositing copper to a thickness of 0.25 μm thereon by vacuum deposition.
【0023】次に、該基板を弱アルカリ性の脱脂剤に1
分間浸漬して脱脂した後2分間水洗して表面を清浄化し
た。次いで、2.5モル/リットルのヒドラジンと1.
0モル/リットルのエチレンジアミンの混合有機アルカ
リ溶液に浸漬して露出している絶縁体フィルム表面を親
水化し、水洗後に希塩酸溶液に浸漬して基板表面を中和
し、さらにキャラクタライジング液、アクセレーティン
グ液(共に奥野製薬社製)に浸漬して基板表面に無電解
めっき用の触媒を付与した。引き続き表1に示す組成の
無電解銅めっき液に基板を3分間浸漬して表面に無電解
銅めっき被膜を形成した。このときのめっき条件はめっ
き液の温度60℃、pH=12.5で、空気撹拌による
処理を行った。Next, the substrate is treated with a weakly alkaline degreasing agent.
After soaking for 1 minute to degrease, the surface was cleaned by washing with water for 2 minutes. Then 2.5 mol / l hydrazine and 1.
The exposed surface of the insulating film is made hydrophilic by immersing it in a mixed organic alkali solution of 0 mol / liter of ethylenediamine, washed with water and then immersed in a dilute hydrochloric acid solution to neutralize the surface of the substrate, and further characterization liquid and accelerating liquid. (Both made by Okuno Seiyaku Co., Ltd.) to apply a catalyst for electroless plating on the surface of the substrate. Subsequently, the substrate was immersed in an electroless copper plating solution having the composition shown in Table 1 for 3 minutes to form an electroless copper plating film on the surface. At this time, the plating conditions were such that the temperature of the plating solution was 60 ° C. and the pH was 12.5, and the treatment was performed by stirring with air.
【0024】[0024]
【表1】 無電解めっき液組成 ───────── ──────────────────────── 硫酸銅 : 10g/l EDTA : 30g/l HCHO(36%sol.) : 5ml/l PEG#1000 : 0.5g/l ジピリジル : 10ml/l ──────────────────────── 無電解めっき処理後、引き続き表2に示す組成の電気銅
めっき液を用いて電気めっき処理を行い厚さ5μmの銅
被膜を形成した。このときのめっき条件は、めっき液の
温度は室温、撹拌は機械撹拌で、通電時の電流密度は3
A/dm2であり、通電時間は9分間とした。[Table 1] Electroless plating solution composition ───────── ──────────────────────── Copper sulfate: 10 g / l EDTA: 30 g / l HCHO (36% sol.): 5 ml / l PEG # 1000: 0.5 g / l dipyridyl: 10 ml / l ────────────────────── After the electroless plating treatment, an electrolytic copper plating solution having the composition shown in Table 2 was subsequently used to perform an electroplating treatment to form a copper coating having a thickness of 5 μm. The plating conditions at this time were: the temperature of the plating solution was room temperature, the stirring was mechanical stirring, and the current density during energization was 3
A / dm 2 , and the energization time was 9 minutes.
【0025】[0025]
【表2】 電気銅めっき液組成 ───────── ──────────────────── 硫酸銅 : 80g/l 硫酸 :200g/l 光沢剤 : 適量 塩素イオン :50mg/l ──────────────────── 得られた基板の銅被膜側から光をあててピンホールの有
無を確認したところ、12cm×12cmの領域内では
光の透過は認められず、ピンホールが存在しないことが
わかった。この基板を用いて配線幅が40μm、配線ピ
ッチが80μmのフレキシブル配線板を常法によるサブ
トラクティブ法に基づいて作成したところ、配線部分に
ピンホールが原因で生ずる欠陥部分や断線部分などの欠
陥のないものが得られた。なお、本実施例は、サブトラ
クティブ法によって絶縁体フィルムの片面に配線パター
ンを有する片面フレキシブル配線板を作成した例を示し
たものであるが、絶縁体フィルムの両面に配線部を有す
る両面フレキシブル配線板、あるいはセミアディティブ
法による片面または両面フレキシブル配線板についても
同様に優れた結果が得られることが確認されている。 実施例2 脱脂処理後の絶縁体フィルム表面の親水化処理を2モル
/リットルの水酸化カリウム溶液を用いた以外は、実施
例1と同様の手順で片面フレキシブル配線板を作成した
ところ、得られた配線板はピンホールの存在に基づく配
線部の欠陥のないものが得られた。 実施例3 脱脂処理後の絶縁体フィルム表面の親水化処理を2.5
モル/リットルのヒドラジンと2モル/リットルの水酸
化カリウムの混合アルカリ溶液を用いた以外は実施例1
と同様の手順で片面フレキシブル配線板を作成したとこ
ろ、得られた配線板はピンホールの存在に基づく配線部
の欠陥のないものが得られた。 比較例1 厚さ50μmのポリイミドフィルム(東レ・デュポン社
製、「カプトン200V」)を12cm×12cmの大
きさに切り出し、その片面に真空蒸着法によってニッケ
ルを100オングストロームの厚さに被着させ、さらに
その上に真空蒸着法によって銅を0.25μmの厚さに
被着させた基板を作成した。[Table 2] Composition of electrolytic copper plating solution ───────── ──────────────────── Copper sulfate: 80 g / l Sulfuric acid: 200 g / l Gloss Agent: Appropriate amount Chloride ion: 50 mg / l ──────────────────── When the presence of pinholes was confirmed by shining light from the copper coating side of the obtained substrate , 12 cm × 12 cm, no light transmission was observed, and it was found that there was no pinhole. Using this substrate, a flexible wiring board having a wiring width of 40 μm and a wiring pitch of 80 μm was prepared based on a subtractive method according to a conventional method. As a result, it was found that the wiring portion had defects such as a defect portion and a disconnection portion caused by pinholes. I got something not. The present example shows an example in which a single-sided flexible wiring board having a wiring pattern on one surface of an insulating film is prepared by a subtractive method, but a double-sided flexible wiring having wiring portions on both surfaces of the insulating film. It has been confirmed that the same excellent results can be obtained for a board or a single-sided or double-sided flexible wiring board prepared by the semi-additive method. Example 2 A single-sided flexible wiring board was prepared by the same procedure as in Example 1 except that the hydrophilizing treatment of the insulating film surface after the degreasing treatment was carried out by using a 2 mol / liter potassium hydroxide solution. The obtained wiring board was free from defects in the wiring part due to the presence of pinholes. Example 3 After the degreasing treatment, the surface of the insulator film was made hydrophilic by 2.5.
Example 1 except that a mixed alkaline solution of mol / l hydrazine and 2 mol / l potassium hydroxide was used.
When a single-sided flexible wiring board was prepared by the same procedure as in (1), the obtained wiring board was free from defects in the wiring part due to the presence of pinholes. Comparative Example 1 A polyimide film having a thickness of 50 μm (manufactured by Toray DuPont, “Kapton 200V”) was cut into a size of 12 cm × 12 cm, and nickel was deposited on one side of the film to a thickness of 100 angstrom by a vacuum deposition method. Furthermore, a substrate was formed by depositing copper to a thickness of 0.25 μm thereon by vacuum deposition.
【0026】次に、該基板を弱アルカリ性の脱脂剤に1
分間浸漬して脱脂した後2分間水洗して表面を清浄化し
た。次いで、0.01モル/リットルのヒドラジンと
0.01モル/リットルのエチレンジアミンの混合有機
アルカリ溶液に浸漬して露出している絶縁体フィルム表
面を親水化した。その後基板に無電解銅めっき処理を施
すための工程を経ることなく直ちに実施例1と同様の手
順で電気銅めっき法によって5μmの銅被膜を形成し
た。Next, the substrate is treated with a weakly alkaline degreasing agent.
After soaking for 1 minute to degrease, the surface was cleaned by washing with water for 2 minutes. Then, the exposed surface of the insulating film was made hydrophilic by immersing it in a mixed organic alkaline solution of 0.01 mol / liter hydrazine and 0.01 mol / liter ethylenediamine. Then, a 5 μm copper coating was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without passing through a step for subjecting the substrate to electroless copper plating.
【0027】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmでその数は真空蒸着後のピンホール
数と殆ど変化がなかった。When the presence or absence of pinholes was confirmed by shining light from the copper coating side of the obtained substrate, it was 12 cm × 12 cm.
There was light transmission in the region of, and the size of the pinholes was several μm to hundreds of tens of μm, and the number was almost the same as the number of pinholes after vacuum deposition.
【0028】この基板を用いて配線幅が40μm、配線
ピッチが80μmのフレキシブル配線板を常法によるサ
ブトラクティブ法に基づいて作成したところ、配線部分
にピンホールが原因で生ずる欠陥部分や断線部分などの
欠陥が多数確認され、この基板は狭ピッチの微小配線基
板には適さないことがわかった。 比較例2 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで5モル/リットルのヒドラジンと
3モル/リットルのエチレンジアミンの混合溶液に浸漬
して、露出している絶縁体フィルム表面を親水化した。
その後、基板に無電解めっき処理を施すための工程を経
ることなく直ちに実施例1と同様の手順で電気銅めっき
法によって、5μm銅被膜を形成した。Using this substrate, a flexible wiring board having a wiring width of 40 μm and a wiring pitch of 80 μm was prepared based on the subtractive method according to the usual method. As a result, a defective portion or a disconnection portion caused by a pinhole in the wiring portion was produced. Many defects were confirmed, and it was found that this substrate was not suitable for a fine pitch fine wiring substrate. Comparative Example 2 A substrate prepared in the same manner as in Comparative Example 1 was immersed in a weak alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Next, the exposed surface of the insulating film was made hydrophilic by immersing it in a mixed solution of 5 mol / liter of hydrazine and 3 mol / liter of ethylenediamine.
Thereafter, a 5 μm copper coating was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without passing through the step of subjecting the substrate to electroless plating.
【0029】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmで、加えて筋状の裂け目も存在し
た。ピンホールの数は真空蒸着した後のピンホール数と
比較し増加していた。When the presence or absence of pinholes was confirmed by shining light from the copper coating side of the obtained substrate, it was 12 cm × 12 cm.
There was light transmission in the region (2), the size of the pinhole was from several μm to hundreds of tens of μm, and in addition, streak-like cracks were present. The number of pinholes was larger than that after vacuum evaporation.
【0030】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例3 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで0.1モル/リットルのヒドラジ
ンと0.01モル/リットル水酸化カリウムの混合溶液
に浸漬して、露出している絶縁体フィルム表面を親水化
した。その後、基板に無電解めっき処理を施すための工
程を経ることなく直ちに実施例1と同様の手順で電気銅
めっき法によって、5μm銅被膜を形成した。When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as in Comparative Example 1 were confirmed, and it was found that it was not suitable for a fine pitch fine wiring board. Comparative Example 3 A substrate prepared in the same manner as in Comparative Example 1 was immersed in a weak alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, it was immersed in a mixed solution of 0.1 mol / liter hydrazine and 0.01 mol / liter potassium hydroxide to make the exposed surface of the insulating film hydrophilic. Thereafter, a 5 μm copper coating was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without passing through the step of subjecting the substrate to electroless plating.
【0031】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例4 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで6モル/リットルのヒドラジンと
5モル/リットル水酸化カリウムの混合溶液に浸漬し
て、露出している絶縁体フィルム表面を親水化した。そ
の後、基板に無電解めっき処理を施すための工程を経る
ことなく直ちに実施例1と同様の手順で電気銅めっき法
によって、5μm銅被膜を形成した。When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as in Comparative Example 1 were confirmed, and it was found that it was not suitable for a fine pitch fine wiring board. Comparative Example 4 A substrate prepared in the same manner as in Comparative Example 1 was immersed in a weak alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, the surface of the exposed insulating film was hydrophilized by immersing it in a mixed solution of 6 mol / liter hydrazine and 5 mol / liter potassium hydroxide. Thereafter, a 5 μm copper coating was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without passing through the step of subjecting the substrate to electroless plating.
【0032】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmで加えて筋状の裂け目も存在した。
ピンホールの数は真空蒸着した後のピンホール数と比較
して増加していた。When the presence or absence of pinholes was confirmed by shining light from the copper coating side of the obtained substrate, it was 12 cm × 12 cm.
There was light transmission in the region of, and the size of the pinhole was several μm to several hundred and several tens μm, and in addition, there were streak-like cracks.
The number of pinholes was increased compared to the number of pinholes after vacuum evaporation.
【0033】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例5 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで0.01モル/リットルの水酸化
カリウム溶液に浸漬して、露出している絶縁体フィルム
表面を親水化した。その後、基板に無電解めっき処理を
施すための工程を経ることなく直ちに実施例1と同様の
手順で電気銅めっき法によって、5μm銅被膜を形成し
た。When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as in Comparative Example 1 were confirmed, and it was found that it was not suitable for a fine pitch fine wiring board. Comparative Example 5 A substrate prepared in the same manner as in Comparative Example 1 was immersed in a weak alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, it was immersed in a 0.01 mol / liter potassium hydroxide solution to make the exposed surface of the insulating film hydrophilic. Thereafter, a 5 μm copper coating was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without passing through the step of subjecting the substrate to electroless plating.
【0034】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmでその数は真空蒸着した後のピンホ
ール数とほぼ変化がなかった。When the presence or absence of pinholes was confirmed by shining light from the copper coating side of the obtained substrate, it was 12 cm × 12 cm.
There was light transmission in the region of, and the size of the pinholes was from several μm to hundreds of tens of μm, and the number was almost the same as the number of pinholes after vacuum deposition.
【0035】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。 比較例6 比較例1と同様にして作成した基板を弱アルカリ性の脱
脂剤に1分間浸漬して脱脂した後、2分間水洗して表面
を清浄化した。次いで5モル/リットルの水酸化カリウ
ム溶液に浸漬して、露出している絶縁体フィルム表面を
親水化した。When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as in Comparative Example 1 were confirmed, and it was found that it was not suitable for a fine pitch fine wiring board. Comparative Example 6 A substrate prepared in the same manner as in Comparative Example 1 was immersed in a weak alkaline degreasing agent for 1 minute to degrease it, and then washed with water for 2 minutes to clean the surface. Then, it was immersed in a 5 mol / liter potassium hydroxide solution to make the exposed surface of the insulating film hydrophilic.
【0036】その後、基板に無電解めっき処理を施すた
めの工程を経ることなく直ちに実施例1と同様の手順で
電気銅めっき法によって、5μm銅被膜を形成した。Then, a 5 μm copper coating was immediately formed by the electrolytic copper plating method in the same procedure as in Example 1 without passing through the step of subjecting the substrate to electroless plating.
【0037】得られた基板の銅被膜側から光をあててピ
ンホールの有無を確認したところ、12cm×12cm
の領域内では光の透過があり、ピンホールの大きさは数
μmから百数十μmで加えて筋状の裂け目も存在した。
ピンホール数は真空蒸着した後のピンホール数と比較し
て増加していた。When the presence or absence of pinholes was confirmed by shining light from the copper coating side of the obtained substrate, it was 12 cm × 12 cm.
There was light transmission in the region of, and the size of the pinhole was several μm to several hundred and several tens μm, and in addition, there were streak-like cracks.
The number of pinholes was increased compared to the number of pinholes after vacuum deposition.
【0038】この基板を用いて比較例1と同様にフレキ
シブル配線板を作成したところ、比較例1と同様の欠陥
が確認され、狭ピッチの微小配線基板には適さないこと
がわかった。When a flexible wiring board was prepared using this substrate in the same manner as in Comparative Example 1, the same defects as in Comparative Example 1 were confirmed, and it was found that it was not suitable for a fine pitch fine wiring board.
【0039】[0039]
【発明の効果】以上述べたように本発明によるときは、
多数のピンホールを生じやすい乾式めっき被膜を有する
基板上に無電解めっき被膜を形成させることにより、ピ
ンホール部に露出している下地金属層の電気めっき時に
おける溶解を防止し、5μm程度の薄い電気めっき被膜
を形成した場合にもピンホール欠陥のない基板を得るこ
とができ、したがってサブトラクティブ法などによる極
めて狭小なピッチを有する配線板を作成する場合におい
ても、配線部の欠陥のない信頼性の優れたフレキシブル
配線板を得ることができるので工業上優れた発明である
ということができる。As described above, according to the present invention,
By forming an electroless plating film on a substrate having a dry plating film that easily causes many pinholes, the underlying metal layer exposed in the pinholes is prevented from being dissolved during electroplating, and the thickness is about 5 μm. A substrate without pinhole defects can be obtained even when an electroplating film is formed. Therefore, even when a wiring board having an extremely narrow pitch is formed by a subtractive method, etc., reliability without a defect in the wiring portion. It can be said that the invention is an industrially excellent invention because it is possible to obtain an excellent flexible wiring board.
Claims (3)
着剤を介さずに、直接ニッケル層を下地金属層として形
成し、さらに該下地金属層上に薄膜の銅層を形成した基
板における該ニッケル層または銅層上にさらに銅の導体
層を形成した後、サブトラクティブ法またはセミアディ
ティブ法によって配線部を形成することによりフレキシ
ブル配線板を製造する方法において、該金属下地層およ
び薄膜の銅層を形成した後の基板を、無機アルカリ溶液
または有機アルカリ溶液のうち少なくとも一方の溶液で
処理した後、該基板表面に無電解めっき銅被膜を0.0
1μm以上の厚さで形成し、さらに該無電解銅めっき被
膜上に銅の導体層を形成することを特徴とする2層フレ
キシブル基板の製造方法。1. A nickel layer in a substrate in which a nickel layer is directly formed as a base metal layer on at least one surface of an insulating film without an adhesive, and a thin copper layer is further formed on the base metal layer. Alternatively, in the method for producing a flexible wiring board by further forming a copper conductor layer on the copper layer and then forming a wiring portion by the subtractive method or the semi-additive method, the metal underlayer and the thin copper layer are formed. The treated substrate is treated with at least one of an inorganic alkaline solution and an organic alkaline solution, and then an electroless plated copper film is formed on the surface of the substrate by 0.0
A method for producing a two-layer flexible substrate, which is characterized in that it is formed to a thickness of 1 μm or more, and a conductor layer of copper is further formed on the electroless copper plating film.
導体層の厚さは5μm〜10μmであることを特徴とす
る請求項1記載の2層フレキシブル基板の製造方法。2. The method for producing a two-layer flexible substrate according to claim 1, wherein the thickness of the copper conductor layer formed on the electroless copper plating film is 5 μm to 10 μm.
接形成する下地金属層のニッケルと該下地金属層上に形
成する薄膜の銅層は、乾式めっき法によって形成される
ことを特徴とする2層フレキシブル基板の製造方法。3. The nickel of the underlying metal layer formed directly on one side or both sides of the insulating film and the thin copper layer formed on the underlying metal layer are formed by dry plating. -Layer flexible substrate manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06336511A JP3125838B2 (en) | 1994-12-22 | 1994-12-22 | Method for manufacturing two-layer flexible substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06336511A JP3125838B2 (en) | 1994-12-22 | 1994-12-22 | Method for manufacturing two-layer flexible substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08181402A true JPH08181402A (en) | 1996-07-12 |
| JP3125838B2 JP3125838B2 (en) | 2001-01-22 |
Family
ID=18299891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06336511A Expired - Lifetime JP3125838B2 (en) | 1994-12-22 | 1994-12-22 | Method for manufacturing two-layer flexible substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3125838B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003004262A1 (en) * | 2001-07-06 | 2003-01-16 | Kaneka Corporation | Laminate and its producing method |
| JP2006316327A (en) * | 2005-05-16 | 2006-11-24 | Daiso Co Ltd | Method for producing flexible copper-clad laminate |
| CN1297398C (en) * | 2001-07-06 | 2007-01-31 | 钟渊化学工业株式会社 | Laminated body and its manufacturing method |
| JP2007023344A (en) * | 2005-07-19 | 2007-02-01 | Sumitomo Metal Mining Co Ltd | Two-layer plated substrate and manufacturing method thereof |
-
1994
- 1994-12-22 JP JP06336511A patent/JP3125838B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003004262A1 (en) * | 2001-07-06 | 2003-01-16 | Kaneka Corporation | Laminate and its producing method |
| CN1297398C (en) * | 2001-07-06 | 2007-01-31 | 钟渊化学工业株式会社 | Laminated body and its manufacturing method |
| JP2006316327A (en) * | 2005-05-16 | 2006-11-24 | Daiso Co Ltd | Method for producing flexible copper-clad laminate |
| JP2007023344A (en) * | 2005-07-19 | 2007-02-01 | Sumitomo Metal Mining Co Ltd | Two-layer plated substrate and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3125838B2 (en) | 2001-01-22 |
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