JPH08199161A - Organic electroluminescent device - Google Patents
Organic electroluminescent deviceInfo
- Publication number
- JPH08199161A JPH08199161A JP7010885A JP1088595A JPH08199161A JP H08199161 A JPH08199161 A JP H08199161A JP 7010885 A JP7010885 A JP 7010885A JP 1088595 A JP1088595 A JP 1088595A JP H08199161 A JPH08199161 A JP H08199161A
- Authority
- JP
- Japan
- Prior art keywords
- group
- transport layer
- substituent
- organic electroluminescent
- optionally substituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 37
- 230000005525 hole transport Effects 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 25
- 239000007924 injection Substances 0.000 claims abstract description 25
- -1 porphyrin compound Chemical class 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 6
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- 150000003624 transition metals Chemical class 0.000 claims abstract description 6
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 5
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 5
- 125000005843 halogen group Chemical group 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 5
- 125000001424 substituent group Chemical group 0.000 claims description 24
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 125000004104 aryloxy group Chemical group 0.000 claims description 4
- 125000004663 dialkyl amino group Chemical group 0.000 claims description 4
- 125000004986 diarylamino group Chemical group 0.000 claims description 4
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 125000005415 substituted alkoxy group Chemical group 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 150000004706 metal oxides Chemical class 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 17
- 238000007740 vapor deposition Methods 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 14
- 238000005401 electroluminescence Methods 0.000 description 10
- 239000002904 solvent Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 5
- 230000032683 aging Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000004984 aromatic diamines Chemical class 0.000 description 4
- 229960003540 oxyquinoline Drugs 0.000 description 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 3
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007850 fluorescent dye Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 2
- 229960000956 coumarin Drugs 0.000 description 2
- 235000001671 coumarin Nutrition 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 150000003513 tertiary aromatic amines Chemical group 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- CHBDXRNMDNRJJC-UHFFFAOYSA-N 1,2,3-triphenylbenzene Chemical class C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 CHBDXRNMDNRJJC-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- FBTOLQFRGURPJH-UHFFFAOYSA-N 1-phenyl-9h-carbazole Chemical group C1=CC=CC=C1C1=CC=CC2=C1NC1=CC=CC=C12 FBTOLQFRGURPJH-UHFFFAOYSA-N 0.000 description 1
- LHGFMZOQWYPJHE-UHFFFAOYSA-N 1-phenylphenanthridine-2,3-diamine Chemical class NC=1C(N)=CC2=NC=C3C=CC=CC3=C2C=1C1=CC=CC=C1 LHGFMZOQWYPJHE-UHFFFAOYSA-N 0.000 description 1
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical class C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- XQQBUAPQHNYYRS-UHFFFAOYSA-N 2-methylthiophene Chemical compound CC1=CC=CS1 XQQBUAPQHNYYRS-UHFFFAOYSA-N 0.000 description 1
- ITDSAAKACHNVLK-UHFFFAOYSA-N 2-phenoxazin-10-yl-n,n-diphenylaniline Chemical compound C12=CC=CC=C2OC2=CC=CC=C2N1C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ITDSAAKACHNVLK-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QENGPZGAWFQWCZ-UHFFFAOYSA-N Methylthiophene Natural products CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- YSXKPIUOCJLQIE-UHFFFAOYSA-N biperiden Chemical compound C1C(C=C2)CC2C1C(C=1C=CC=CC=1)(O)CCN1CCCCC1 YSXKPIUOCJLQIE-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000004775 coumarins Chemical class 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000990 laser dye Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- VDQLDLGIMZTPQO-UHFFFAOYSA-N n-[4-(2,5-dimethylphenyl)phenyl]-4-methyl-n-(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C(=CC=C(C)C=1)C)C1=CC=C(C)C=C1 VDQLDLGIMZTPQO-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical class C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 150000005054 naphthyridines Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001644 phenoxazinyl group Chemical group C1(=CC=CC=2OC3=CC=CC=C3NC12)* 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000005255 pyrrolopyridines Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- XDDVRYDDMGRFAZ-UHFFFAOYSA-N thiobenzophenone Chemical class C=1C=CC=CC=1C(=S)C1=CC=CC=C1 XDDVRYDDMGRFAZ-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
(57)【要約】
【目的】 長期間安定な発光特性を維持し、駆動電圧の
上昇を抑制できる有機電界発光素子を提供する。
【構成】 陽極と陰極との間に、少なくとも正孔注入
層、正孔輸送層及び電子輸送層を有する有機電界発光素
子であって、正孔注入層が有機溶媒処理された下記一般
式(2)等で表されるポルフィリン化合物から構成さ
れ、かつ正孔輸送層と電子輸送層が乾式方法で成膜され
たものである有機電界発光素子。
【化1】
(式中R3、R4はそれぞれ独立に、水素、ハロゲン原
子、水酸基、飽和若しくは不飽和の脂肪族炭化水素基、
芳香族炭化水素基、などを表すか、あるいは、R3とR4
とは結合して環構造を形成してもよい。Yは、窒素原子
又はCH基を表し、Mは遷移金属、金属酸化物などの中
心イオンを表す。)(57) [Summary] [Object] To provide an organic electroluminescent device capable of maintaining stable light emitting characteristics for a long period of time and suppressing an increase in driving voltage. An organic electroluminescent device having at least a hole injection layer, a hole transport layer and an electron transport layer between an anode and a cathode, wherein the hole injection layer is treated with an organic solvent represented by the following general formula (2) ) Or the like, which is composed of a porphyrin compound and has a hole transport layer and an electron transport layer formed by a dry method. Embedded image (In the formula, R 3 and R 4 are each independently hydrogen, a halogen atom, a hydroxyl group, a saturated or unsaturated aliphatic hydrocarbon group,
Represents an aromatic hydrocarbon group, or R 3 and R 4
And may combine with each other to form a ring structure. Y represents a nitrogen atom or a CH group, and M represents a central ion such as a transition metal or a metal oxide. )
Description
【0001】[0001]
【産業上の利用分野】本発明は有機電界発光素子に関す
るものであり、詳しくは、有機化合物から成る発光層に
電界をかけて光を放出する薄膜型デバイスに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence device, and more particularly, to a thin film type device which emits light by applying an electric field to a light emitting layer made of an organic compound.
【0002】[0002]
【従来の技術】従来、薄膜型の電界発光(EL)素子と
しては、無機材料の〓−〓族化合物半導体であるZn
S、CaS、SrS等に、発光中心であるMnや希土類
元素(Eu、Ce、Tb、Sm等)をドープしたものが
一般的であるが、上記の無機材料から作製したEL素子
は、 1)交流駆動が必要(50〜1000Hz)、 2)駆動電圧が高い(〜200V)、 3)フルカラー化が困難(特に青色が問題)、 4)周辺駆動回路のコストが高い、 という問題点を有している。2. Description of the Related Art Conventionally, as a thin film type electroluminescence (EL) element, Zn which is an inorganic material 〓-〓 group compound semiconductor is used.
It is general that S, CaS, SrS, etc. are doped with Mn or a rare earth element (Eu, Ce, Tb, Sm, etc.), which is the emission center, but the EL element made from the above inorganic material is 1). AC drive is required (50 to 1000 Hz), 2) high drive voltage (up to 200 V), 3) full colorization is difficult (especially blue is a problem), and 4) peripheral drive circuit costs are high. ing.
【0003】しかし、近年、上記問題点の改良のため、
有機薄膜を用いたEL素子の開発が行われるようになっ
た。特に、発光効率を高めるために電極からのキャリア
ー注入の効率向上を目的とした電極種類の最適化を行
い、芳香族ジアミンから成る有機正孔輸送層と8−ヒド
ロキシキノリンのアルミニウム錯体から成る有機発光層
を設けた有機電界発光素子の開発(Appl.Phy
s.Lett.,51巻,913頁,1987年)によ
り、従来のアントラセン等の単結晶を用いたEL素子と
比較して発光効率の大幅な改善がなされ、実用特性に近
づいている。However, in recent years, in order to improve the above problems,
EL devices using organic thin films have been developed. In particular, the electrode type was optimized for the purpose of improving the efficiency of carrier injection from the electrode in order to increase the light emission efficiency, and the organic hole transport layer made of an aromatic diamine and the organic light emission made of an aluminum complex of 8-hydroxyquinoline. Of an organic electroluminescent device having a layer (Appl. Phy
s. Lett. , 51, p. 913, 1987), the luminous efficiency has been greatly improved as compared with the conventional EL device using a single crystal such as anthracene, and is close to practical characteristics.
【0004】しかしこれらの素子に使用される物質は、
分子量が小さい為、成膜後の膜の安定性が悪く、数日か
ら数週間で凝集を起こしたり、ガラス転移温度が低いた
め、熱的な安定性に欠けるという欠点があった。そのた
め陽極と正孔輸送層との間に安定な正孔輸送性のポルフ
ィリン化合物をさらに一層挿入し、素子の安定化を計る
試みもなされている(特開昭63−295695号公
報)。しかし定電流密度で素子を駆動した時の駆動電圧
は、500時間の間に7Vから11Vまで上昇し、駆動
電圧の上昇を抑制するまでには至っていない。However, the materials used in these devices are
Since the molecular weight is small, the stability of the film after film formation is poor, and there are drawbacks such that aggregation occurs in a few days to a few weeks, and the glass transition temperature is low, resulting in lack of thermal stability. Therefore, an attempt has been made to further stabilize the device by further inserting a porphyrin compound having a stable hole-transporting property between the anode and the hole-transporting layer (JP-A-63-295695). However, the drive voltage when the device is driven at a constant current density rises from 7 V to 11 V in 500 hours, and the rise of the drive voltage has not been suppressed yet.
【0005】一方、素子構成物質の分子量を増加させて
膜の安定化を計る試みは、例えばスターバースト型の物
質として1,3,5−トリス(4−カルバゾリル)フェ
ニル)ベンゼン(特開平6−312979号公報)、
4,4’,4’’−トリ(N−フェノキサジニル)トリ
フェニルアミン(特開平6−312981号公報)等の
開発が挙げられる。On the other hand, in an attempt to stabilize the film by increasing the molecular weight of the element-constituting substance, for example, 1,3,5-tris (4-carbazolyl) phenyl) benzene as a starburst type substance (see JP-A-6- No. 312979),
Development of 4,4 ′, 4 ″ -tri (N-phenoxazinyl) triphenylamine (JP-A-6-312981) and the like can be mentioned.
【0006】また上記の様な低分子材料の他にも、有機
発光層の材料として、ポリ(p−フェニレンビニレン)
(Nature,347巻,539頁,1990年)、
ポリ[2−メトキシ−5−(2−エチルヘキシルオキ
シ)−1,4−フェニレンビニレン](Appl.Ph
ys.Lett.,58巻,1982頁,1991年)
等の高分子材料の開発や、ポリビニルカルバゾール等の
高分子に低分子の発光材料と電子移動材料を混合した素
子(応用物理,61巻,1044頁,1992年)の開
発も行われている。In addition to the above low molecular weight materials, poly (p-phenylene vinylene) is used as a material for the organic light emitting layer.
(Nature, 347, 539, 1990),
Poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene] (Appl.Ph
ys. Lett. , 58, 1982, 1991)
And the like, and a device in which a low molecular weight light emitting material and an electron transfer material are mixed with a polymer such as polyvinylcarbazole (Applied Physics, Vol. 61, page 1044, 1992) are being developed.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、これま
でに開示されている有機電界発光素子では、素子の寿命
が極めて短く、また、定電流密度で素子の駆動を行った
際に駆動電圧が上昇し、安定な駆動特性が得られないと
いう欠点があった。However, in the organic electroluminescent elements disclosed so far, the life of the element is extremely short, and the driving voltage increases when the element is driven at a constant current density. However, there is a drawback that stable driving characteristics cannot be obtained.
【0008】[0008]
【課題を解決するための手段】本発明者等は上記実情に
鑑み、長期間に亙り安定な発光特性を維持でき、駆動電
圧の上昇を抑制することができる有機電界発光素子を提
供することを目的として鋭意検討を重ねた結果、正孔注
入層として特定のポルフィリン化合物から構成された層
を用い、当該正孔注入層を有機溶媒処理し、かつ正孔輸
送層と電子輸送層とを乾式方法で成膜することにより上
記課題を解決できることを見出し、本発明を完成した。In view of the above situation, the inventors of the present invention provide an organic electroluminescent device capable of maintaining stable light emitting characteristics for a long period of time and suppressing an increase in driving voltage. As a result of repeated intensive studies for the purpose, a layer composed of a specific porphyrin compound was used as the hole injection layer, the hole injection layer was treated with an organic solvent, and the hole transport layer and the electron transport layer were treated by a dry method. The present invention has been completed by finding that the above problems can be solved by forming a film by.
【0009】すなわち、本発明の要旨は、陽極と陰極と
の間に、少なくとも正孔注入層、正孔輸送層及び電子輸
送層を有する有機電界発光素子であって、正孔注入層が
有機溶媒処理された下記一般式(1)又は(2)で表さ
れるポルフィリン化合物から構成され、かつ正孔輸送層
及び電子輸送層が乾式方法で成膜されたものであること
を特徴とする有機電界発光素子、に存する。That is, the gist of the present invention is an organic electroluminescent device having at least a hole injection layer, a hole transport layer and an electron transport layer between an anode and a cathode, wherein the hole injection layer is an organic solvent. An organic electric field comprising a treated porphyrin compound represented by the following general formula (1) or (2), wherein the hole transport layer and the electron transport layer are formed by a dry method. It exists in the light emitting element.
【0010】[0010]
【化3】 Embedded image
【0011】(式中R1、R2はそれぞれ独立に、水素、
ハロゲン原子、水酸基、置換基を有していてもよい飽和
若しくは不飽和の脂肪族炭化水素基、置換基を有してい
てもよい芳香族炭化水素基、置換基を有していてもよい
アルコキシ基、置換基を有していてもよいアリールオキ
シ基、置換基を有していてもよいジアルキルアミノ基、
又は置換基を有していてもよいジアリールアミノ基を表
すか、あるいは、R1とR2は結合して環構造を形成し、
置換基を有していてもよい芳香族炭化水素環、又は、置
換基を有していてもよい複素環を表す。またXは、窒素
原子又はCH基を表す。)(In the formula, R 1 and R 2 are each independently hydrogen,
Halogen atom, hydroxyl group, saturated or unsaturated aliphatic hydrocarbon group which may have a substituent, aromatic hydrocarbon group which may have a substituent, alkoxy which may have a substituent Group, an aryloxy group which may have a substituent, a dialkylamino group which may have a substituent,
Or represents a diarylamino group which may have a substituent, or R 1 and R 2 are bonded to each other to form a ring structure,
It represents an aromatic hydrocarbon ring which may have a substituent or a heterocyclic ring which may have a substituent. X represents a nitrogen atom or a CH group. )
【0012】[0012]
【化4】 [Chemical 4]
【0013】(式中R3、R4はそれぞれ独立に、水素、
ハロゲン原子、水酸基、置換基を有していてもよい飽和
若しくは不飽和の脂肪族炭化水素基、置換基を有してい
てもよい芳香族炭化水素基、置換基を有していてもよい
アルコキシ基、置換基を有していてもよいアリールオキ
シ基、置換基を有していてもよいジアルキルアミノ基、
又は置換基を有していてもよいジアリールアミノ基を表
すか、あるいは、R3とR4は結合して環構造を形成し、
置換基を有していてもよい芳香族炭化水素環、又は、置
換基を有していてもよい複素環を表す。またYは、窒素
原子又はCH基を表し、Mは遷移金属、遷移金属酸化物
又は遷移金属ハロゲン化物のイオンを表す。) 以下、本発明の有機電界発光素子について図面を参照し
ながら説明する。(In the formula, R 3 and R 4 are each independently hydrogen,
Halogen atom, hydroxyl group, saturated or unsaturated aliphatic hydrocarbon group which may have a substituent, aromatic hydrocarbon group which may have a substituent, alkoxy which may have a substituent Group, an aryloxy group which may have a substituent, a dialkylamino group which may have a substituent,
Or represents a diarylamino group which may have a substituent, or R 3 and R 4 are bonded to each other to form a ring structure,
It represents an aromatic hydrocarbon ring which may have a substituent or a heterocyclic ring which may have a substituent. Y represents a nitrogen atom or a CH group, and M represents an ion of a transition metal, a transition metal oxide or a transition metal halide. ) Hereinafter, the organic electroluminescent element of the present invention will be described with reference to the drawings.
【0014】図1は本発明の有機電界発光素子の構成例
を模式的に示す断面図であり、1は基板、2は陽極、3
は正孔注入層、4は正孔輸送層、5は電子輸送層、6は
陰極を各々表わす。基板1は本発明の有機電界発光素子
の支持体として用いられるものであり、石英やガラスの
板、金属板や金属箔、プラスチックフィルムやシートな
どが用いられる。特にガラス板や、ポリエステル、ポリ
メチルメタクリレート、ポリカーボネート、ポリスルホ
ンなどの透明な合成樹脂の板が好ましい。FIG. 1 is a sectional view schematically showing a constitutional example of the organic electroluminescent device of the present invention, in which 1 is a substrate, 2 is an anode, and 3 is.
Is a hole injection layer, 4 is a hole transport layer, 5 is an electron transport layer, and 6 is a cathode. The substrate 1 is used as a support of the organic electroluminescent element of the present invention, and a plate of quartz or glass, a metal plate or metal foil, a plastic film or sheet, etc. is used. A glass plate and a transparent synthetic resin plate such as polyester, polymethylmethacrylate, polycarbonate, and polysulfone are particularly preferable.
【0015】基板1上には陽極2が設けられる。陽極2
は有機発光層への正孔注入の役割を果たすものである。
この陽極2は、通常、アルミニウム、金、銀、ニッケ
ル、パラジウム、又はテルル等の金属、インジウム及び
/又はスズの酸化物等の金属酸化物、ヨウ化銅、カーボ
ンブラック、又は、ポリ(3−メチルチオフェン)、ポ
リアニリン等の導電性高分子などにより構成される。陽
極2の形成は通常、スパッタリング法、真空蒸着法など
により行われることが多いが、銀などの金属の微粒子あ
るいはヨウ化銅、カーボンブラック、導電性の金属酸化
物の微粒子、導電性高分子の微粉末などの場合には、適
当なバインダー樹脂溶液に分散し、基板上に塗布するこ
とにより形成することもできる。さらに、導電性高分子
の場合は電解重合により直接基板上に薄膜を形成した
り、基板上に塗布して形成することもできる(App
l.Phys.Lett.,60巻,2711頁,19
92年)。上記の陽極2は異なる物質の積層体とするこ
とも可能である。陽極2の厚みは、必要とする透明性に
より異なるが、透明性が必要とされる場合は、可視光の
透過率が60%以上、好ましくは80%以上とすること
が望ましく、この場合の厚みは、通常、5〜1000n
m、好ましくは10〜500nm程度である。An anode 2 is provided on the substrate 1. Anode 2
Plays a role of injecting holes into the organic light emitting layer.
This anode 2 is usually a metal such as aluminum, gold, silver, nickel, palladium, or tellurium, a metal oxide such as an oxide of indium and / or tin, copper iodide, carbon black, or poly (3-). (Methylthiophene), a conductive polymer such as polyaniline. The anode 2 is usually formed by a sputtering method, a vacuum vapor deposition method or the like, but fine particles of a metal such as silver or copper iodide, carbon black, fine particles of a conductive metal oxide, or a conductive polymer. In the case of fine powder or the like, it can also be formed by dispersing it in an appropriate binder resin solution and applying it on a substrate. Further, in the case of a conductive polymer, a thin film can be directly formed on the substrate by electrolytic polymerization, or can be formed by coating on the substrate (App.
l. Phys. Lett. , 60, 2711, 19
1992). The anode 2 may be a laminate of different materials. The thickness of the anode 2 varies depending on the required transparency, but when the transparency is required, it is desirable that the visible light transmittance is 60% or more, preferably 80% or more. Is usually 5 to 1000 n
m, preferably about 10 to 500 nm.
【0016】不透明でよい場合は陽極2は基板1と同一
素材でもよく、基板1が陽極2を兼ねることもできる。
また、上記の陽極の上に異なる導電材料を積層すること
も可能である。陽極2の上には正孔注入層3が設けられ
る。正孔注入層3の材料には陽極からの正孔の注入が行
われ易く、界面でトラップを作りにくく、膜が安定であ
ることが要求される。本発明では正孔注入層3として前
記一般式(1)又は(2)で表されるポルフィリン化合
物を用いる。好ましいポルフィリン化合物の例を表−
1、表−2に示すが、これらに限定されるものではな
い。When it is opaque, the anode 2 may be made of the same material as the substrate 1, and the substrate 1 can also serve as the anode 2.
It is also possible to stack different conductive materials on the above-mentioned anode. A hole injection layer 3 is provided on the anode 2. It is required for the material of the hole injection layer 3 that holes are easily injected from the anode, it is difficult to form a trap at the interface, and the film is stable. In the present invention, the porphyrin compound represented by the general formula (1) or (2) is used as the hole injection layer 3. Examples of preferred porphyrin compounds
1, shown in Table-2, but not limited thereto.
【0017】[0017]
【表1】 [Table 1]
【0018】[0018]
【表2】 [Table 2]
【0019】正孔注入層3の膜厚は、上限は光の透過
率、下限は陽極の被覆率で決定される。膜厚の下限は、
陽極2の表面の中心線平均粗さ(Ra)以上、好ましく
は中心線平均粗さの2倍以上である。例えば、陽極とし
て好適に用いられるインジウム・錫酸化物(以下、「I
TO」と称する)では、通常、触針式の表面粗さ検査器
機(Taylor Hobson社製 TALY ST
EP)で測定を行うと、JIS B0601の表面粗さ
の中の中心線平均粗さ(Ra)は0.7nmから1.5
nm程度の値を持つ。従って、陽極2としてITOを用
いた場合には、正孔注入層の膜厚は1.5nm以上、好
ましくは3nm以上、特に好ましくは5nm以上であ
る。膜厚の上限は、通常300nm以下であり、好まし
くは200nm以下である。The upper limit of the thickness of the hole injection layer 3 is determined by the light transmittance, and the lower limit is determined by the anode coverage. The lower limit of film thickness is
It is not less than the center line average roughness (Ra) of the surface of the anode 2, preferably not less than twice the center line average roughness. For example, indium tin oxide (hereinafter referred to as “I
"TO") is generally a stylus type surface roughness tester (Taylor ST manufactured by Taylor Hobson).
When measured by EP), the center line average roughness (Ra) in the surface roughness of JIS B0601 is 0.7 nm to 1.5.
It has a value of about nm. Therefore, when ITO is used as the anode 2, the thickness of the hole injection layer is 1.5 nm or more, preferably 3 nm or more, and particularly preferably 5 nm or more. The upper limit of the film thickness is usually 300 nm or less, preferably 200 nm or less.
【0020】本発明では、これらの正孔注入層を有機溶
媒で処理をすることが必要である。処理に用いる溶媒は
一般には、トルエン、キシレン、ベンゼン等の芳香族炭
化水素、メタノール、エタノール、イソプロピルアルコ
ール等のアルコール類、アセトン、メチルエチルケトン
等のケトン類、酢酸エチル等のエステル類、エチルエー
テル、1,4−ジオキサン、テトラヒドロフラン(TH
F)等のエーテル類、四塩化炭素、クロロホルム等のハ
ロゲン化炭化水素、ニトロベンゼン、ニトロメタン等の
ニトロ化合物、メチルアニリン、ジメチルアニリン、ピ
リジン、ピコリン、ピラジン、ビペリジン、、メチルア
ミン、ジメチルアミン、トリメチルアミン、ジエチルア
ミン、n−ヘキシルアミン等のアミン類、その他ジメチ
ルスルホオキシド(DMSO)、N,N−ジメチルホル
ムアミド(DMF)N−メチルピロリドン等の非プロト
ン性極性溶媒等の溶媒を挙げることができる。In the present invention, it is necessary to treat these hole injection layers with an organic solvent. Solvents used for the treatment are generally aromatic hydrocarbons such as toluene, xylene and benzene, alcohols such as methanol, ethanol and isopropyl alcohol, ketones such as acetone and methyl ethyl ketone, esters such as ethyl acetate, ethyl ether, 1 , 4-dioxane, tetrahydrofuran (TH
F) and the like ethers, carbon tetrachloride, halogenated hydrocarbons such as chloroform, nitro compounds such as nitrobenzene and nitromethane, methylaniline, dimethylaniline, pyridine, picoline, pyrazine, biperidine, methylamine, dimethylamine, trimethylamine, Examples include amines such as diethylamine and n-hexylamine, and other solvents such as aprotic polar solvents such as dimethyl sulfoxide (DMSO) and N, N-dimethylformamide (DMF) N-methylpyrrolidone.
【0021】処理の方法としては、溶媒蒸気に暴露する
方法、直接溶媒に浸漬する方法等がある。処理時間とし
ては、一般には1秒以上10時間以下であり、好ましく
は、溶媒蒸気に暴露する方法では30分以上10時間以
下、直接溶媒に浸漬する方法では10秒以上30分以下
である。処理後は溶媒の除去をすばやく行うのが好まし
い。溶媒処理を行うことにより、膜は結晶化を起こす
が、この結晶はきわめて安定であり、安定化した正孔注
入層を形成することができる。As the method of treatment, there are a method of exposing to a solvent vapor, a method of directly immersing in a solvent, and the like. The treatment time is generally 1 second or more and 10 hours or less, preferably 30 minutes or more and 10 hours or less in the method of exposing to solvent vapor, and 10 seconds or more and 30 minutes or less in the method of directly dipping in the solvent. It is preferable to remove the solvent quickly after the treatment. Although the film is crystallized by the solvent treatment, the crystal is extremely stable, and a stabilized hole injection layer can be formed.
【0022】正孔注入層3の上には、正孔輸送層4が形
成される。正孔輸送層の材料としては、正孔の移動度が
大きく、さらに安定性に優れ、トラップとなる不純物が
製造時や使用時発生しにくいことが要求される。このよ
うな正孔輸送材料としては、例えば、1,1−ビス(4
−ジ−p−トリルアミノフェニル)シクロヘキサン等の
3級芳香族アミンユニットを連結した芳香族ジアミン化
合物(特開昭59−194393号公報)、4,4’−
ビス[N−(1−ナフチル)−N−フェニルアミノ]ビ
フェニルで代表される2個以上の3級アミンを含み2個
以上の縮合芳香族環が窒素原子に置換した芳香族アミン
(特開平5−234681号公報)、トリフェニルベン
ゼンの誘導体でスターバースト構造を有する芳香族トリ
アミン(米国特許第4,923,774号)、N,N’
−ジフェニル−N,N’−ビス(3−メチルフェニル)
−ビフェニル−4,4’−ジアミン等の芳香族ジアミン
(米国特許第4,764,625号)、α,α,α’,
α’−テトラメチル−α,α’−ビス(4−ジ−p−ト
リルアミノフェニル)−p−キシレン(特開平3−26
9084号公報)、分子全体として立体的に非対称なト
リフェニルアミン誘導体(特開平4−129271号公
報)、ピレニル基に芳香族ジアミノ基が複数個置換した
化合物(特開平4−175395号公報)、エチレン基
で3級芳香族アミンユニットを連結した芳香族ジアミン
(特開平4−264189号公報)、スチリル構造を有
する芳香族ジアミン(特開平4−290851号公
報)、チオフェン基で芳香族3級アミンユニットを連結
したもの(特開平4−304466号公報)、スターバ
ースト型芳香族トリアミン(特開平4−308688号
公報)、ベンジルフェニル化合物(特開平4−3641
53号公報)、フルオレン基で3級アミンを連結したも
の(特開平5−25473号公報)、トリアミン化合物
(特開平5−239455号公報)、ビスジピリジルア
ミノビフェニル(特開平5−320634号公報)、
N,N,N−トリフェニルアミン誘導体(特開平6−1
972号公報)、フェノキサジン構造を有する芳香族ジ
アミン(特願平5−290728号)、ジアミノフェニ
ルフェナントリジン誘導体(特願平6−45669号)
に示される芳香族アミン系化合物、ヒドラゾン化合物
(特開平2−311591号公報)、シラザン化合物
(米国特許第4,950,950号公報)、シラナミン
誘導体(特開平6−49079号公報)、ホスファミン
誘導体(特開平6−25659号公報)、キナクリドン
化合物等が挙げられる。これらの化合物は、単独で用い
てもよいし、混合して用いてもよい。The hole transport layer 4 is formed on the hole injection layer 3. The material for the hole-transporting layer is required to have high hole mobility, excellent stability, and resistance to generation of impurities serving as traps during production or use. As such a hole transport material, for example, 1,1-bis (4
-Di-p-tolylaminophenyl) cyclohexane and other aromatic diamine compounds linked to a tertiary aromatic amine unit (JP-A-59-194393), 4,4'-
Aromatic amines containing two or more tertiary amines represented by bis [N- (1-naphthyl) -N-phenylamino] biphenyl and having two or more fused aromatic rings substituted with nitrogen atoms (Japanese Patent Laid-Open No. 5-312058). -234681), an aromatic triamine having a starburst structure with a derivative of triphenylbenzene (US Pat. No. 4,923,774), N, N '.
-Diphenyl-N, N'-bis (3-methylphenyl)
-Aromatic diamines such as biphenyl-4,4'-diamine (US Pat. No. 4,764,625), α, α, α ′,
α'-Tetramethyl-α, α'-bis (4-di-p-tolylaminophenyl) -p-xylene (JP-A-3-26)
9084), a triphenylamine derivative which is sterically asymmetric as a whole molecule (JP-A-4-12927), a compound in which a plurality of aromatic diamino groups are substituted on a pyrenyl group (JP-A-4-175395), Aromatic diamines in which tertiary aromatic amine units are linked by ethylene groups (JP-A-4-264189), aromatic diamines having a styryl structure (JP-A-4-290851), and aromatic tertiary amines with thiophene groups. One in which units are linked (JP-A-4-304466), a starburst type aromatic triamine (JP-A-4-308688), and a benzylphenyl compound (JP-A-4-3641).
53), those in which a tertiary amine is linked by a fluorene group (JP-A-5-25473), triamine compounds (JP-A-5-239455), bisdipyridylaminobiphenyl (JP-A-5-320634). ,
N, N, N-triphenylamine derivative (Japanese Patent Laid-Open No. 6-1
972), an aromatic diamine having a phenoxazine structure (Japanese Patent Application No. 5-290728), and a diaminophenylphenanthridine derivative (Japanese Patent Application No. 6-45669).
Aromatic amine compound, hydrazone compound (JP-A-2-311591), silazane compound (US Pat. No. 4,950,950), silanamin derivative (JP-A-6-49079), phosphamine derivative (JP-A-6-25659), quinacridone compounds and the like. These compounds may be used alone or in combination.
【0023】上記の有機正孔輸送材料の成膜方法として
は大別して湿式成膜法、乾式成膜法の2種類の成膜法が
知られているが、スピンコート法やディップ法等の湿式
成膜法で積層膜を作製した場合、正孔注入層と正孔輸送
層の界面が混じり合い、明確な層構造を形成できないた
め、界面の状態を制御しにくく、再現性良く素子を作製
するのが困難である。そこで、本発明においては乾式成
膜法で正孔輸送層4を成膜する。上記の有機正孔輸送材
料の乾式成膜方法としては真空蒸着法、イオン化蒸着法
等が挙げられるが、通常は、真空蒸着法が用いられる。As the film forming method of the above organic hole transporting material, there are roughly classified two kinds of film forming methods such as a wet film forming method and a dry film forming method, but a wet method such as a spin coat method or a dip method is known. When a laminated film is formed by the film formation method, the interfaces of the hole injection layer and the hole transport layer are mixed with each other, and a clear layer structure cannot be formed. Therefore, it is difficult to control the state of the interface and the device is manufactured with good reproducibility. Is difficult. Therefore, in the present invention, the hole transport layer 4 is formed by a dry film forming method. Examples of the dry film forming method of the organic hole transporting material include a vacuum vapor deposition method and an ionization vapor deposition method, and the vacuum vapor deposition method is usually used.
【0024】上記正孔輸送層4を形成する場合、さら
に、アクセプタとして、芳香族カルボン酸の金属錯体及
び/または金属塩(特開平4−320484号公報)、
ベンゾフェノン誘導体およびチオベンゾフェノン誘導体
(特開平5−295361号公報)、フラーレン類(特
開平5−331458号公報)を10-3〜10重量%の
濃度でドープして、フリーキャリアとしての正孔を生成
させ、低電圧駆動とすることが可能である。When the hole transport layer 4 is formed, a metal complex and / or a metal salt of an aromatic carboxylic acid is further used as an acceptor (JP-A-4-320484),
A benzophenone derivative and a thiobenzophenone derivative (JP-A-5-295361) and fullerenes (JP-A-5-331458) are doped at a concentration of 10 −3 to 10% by weight to generate holes as free carriers. Therefore, it is possible to drive at a low voltage.
【0025】正孔輸送層4の膜厚は、通常、10〜30
0nm、好ましくは30〜100nmである。正孔輸送
層4の材料としては有機化合物の代わりに無機材料を使
用することも可能である。無機材料に要求される条件
は、有機正孔輸送材料と同じである。正孔輸送層4に用
いられる無機材料としては、p型水素化非晶質シリコ
ン、p型水素化非晶質炭化シリコン、p型水素化微結晶
性炭化シリコン、あるいは、p型硫化亜鉛、p型セレン
化亜鉛等が挙げられる。これらの無機正孔輸送層はCV
D法、プラズマCVD法、真空蒸着法、スパッタ法等に
より形成される。The thickness of the hole transport layer 4 is usually 10 to 30.
It is 0 nm, preferably 30 to 100 nm. As the material of the hole transport layer 4, it is possible to use an inorganic material instead of an organic compound. The conditions required for the inorganic material are the same as those for the organic hole transport material. Examples of the inorganic material used for the hole transport layer 4 include p-type hydrogenated amorphous silicon, p-type hydrogenated amorphous silicon carbide, p-type hydrogenated microcrystalline silicon carbide, p-type zinc sulfide, and p-type zinc sulfide. Examples include type zinc selenide. These inorganic hole transport layers are CV
It is formed by the D method, plasma CVD method, vacuum deposition method, sputtering method, or the like.
【0026】無機正孔輸送層の膜厚も有機正孔輸送層と
同様に、通常、10〜300nm、好ましくは30〜1
00nmである。正孔輸送層4の上には電子輸送層5が
設けられる。電子輸送層5は、電界を与えられた電極間
において陰極からの電子を効率よく正孔輸送層4の方向
に輸送することができる化合物より形成される。The thickness of the inorganic hole transporting layer is usually 10 to 300 nm, preferably 30 to 1 like the organic hole transporting layer.
00 nm. An electron transport layer 5 is provided on the hole transport layer 4. The electron transport layer 5 is formed of a compound capable of efficiently transporting electrons from the cathode toward the hole transport layer 4 between the electrodes to which an electric field is applied.
【0027】電子輸送材料としては、陰極6からの電子
注入効率が高く、かつ、注入された電子を効率よく輸送
することができる化合物であることが必要である。その
ためには、電子親和力が大きく、しかも電子移動度が大
きく、さらに安定性にすぐれ、トラップとなる不純物が
製造時や使用時に発生しにくい化合物であることが要求
される。The electron transport material must be a compound that has a high electron injection efficiency from the cathode 6 and can efficiently transport the injected electrons. For this purpose, it is required that the compound has a high electron affinity, a high electron mobility, excellent stability, and is unlikely to generate impurities serving as traps during production or use.
【0028】このような条件を満たす材料としては、テ
トラフェニルブタジエンなどの芳香族化合物(特開昭5
7−51781号公報)、8−ヒドロキシキノリンのア
ルミニウム錯体などの金属錯体(特開昭59−1943
93号公報)、シクロペンタジエン誘導体(特開平2−
289675号公報)、ペリノン誘導体(特開平2−2
89676号公報)、オキサジアゾール誘導体(特開平
2−216791号公報)、ビススチリルベンゼン誘導
体(特開平1−245087号公報、同2−22248
4号公報)、ペリレン誘導体(特開平2−189890
号公報、同3−791号公報)、クマリン化合物(特開
平2−191694号公報、同3−792号公報)、希
土類錯体(特開平1−256584号公報)、ジスチリ
ルピラジン誘導体(特開平2−252793号公報)、
p−フェニレン化合物(特開平3−33183号公
報)、チアジアゾロピリジン誘導体(特開平3−372
92号公報)、ピロロピリジン誘導体(特開平3−37
293号公報)、ナフチリジン誘導体(特開平3−20
3982号公報)などが挙げられる。As materials satisfying such conditions, aromatic compounds such as tetraphenyl butadiene (Japanese Patent Laid-Open No. Sho 5)
7-51781), a metal complex such as an aluminum complex of 8-hydroxyquinoline (JP-A-59-1943).
93), a cyclopentadiene derivative (JP-A-2-
289675), perinone derivatives (JP-A-2-2)
No. 89676), an oxadiazole derivative (JP-A-2-216791), and a bisstyrylbenzene derivative (JP-A 1-245087, 2-222248).
4), perylene derivative (JP-A-2-189890).
JP-A No. 3-791, JP), coumarin compound (JP-A-2-191694-, JP-A-3-792), rare earth complex (JP-A-1-256584), distyrylpyrazine derivative (JP-A-2). -252793),
p-phenylene compound (JP-A-3-33183), thiadiazolopyridine derivative (JP-A-3-372)
92), a pyrrolopyridine derivative (JP-A-3-37).
293), naphthyridine derivatives (JP-A-3-20).
3982).
【0029】これらの化合物を用いた電子輸送層5は、
電子を輸送する役割と、正孔と電子の再結合の際に発光
をもたらす役割とを同時に果している。正孔輸送層4が
発光機能を有する場合は、電子輸送層5は電子を輸送す
る役割だけを果たす。電子輸送層の乾式成膜方法として
は真空蒸着法、イオン化蒸着法等が挙げられる。The electron transport layer 5 using these compounds is
It simultaneously plays a role of transporting electrons and a role of causing light emission upon recombination of holes and electrons. When the hole transport layer 4 has a light emitting function, the electron transport layer 5 serves only to transport electrons. Examples of the dry film forming method of the electron transport layer include a vacuum evaporation method and an ionization evaporation method.
【0030】素子の発光効率を向上させるとともに発光
色を変える目的で、例えば、8−ヒドロキシキノリンの
アルミニウム錯体をホスト材料として、クマリン等のレ
ーザ用蛍光色素をドープすること(J.Appl.Ph
ys.,65巻,3610頁,1989年)も行われて
いる。本発明においても上記の電子輸送材料をホスト材
料として各種の蛍光色素を10-3〜10モル%ドープす
ることにより、素子の発光特性をさらに向上させること
ができる。電子輸送層5の膜厚は、通常、10〜200
nm、好ましくは30〜100nmである。For the purpose of improving the luminous efficiency of the device and changing the luminescent color, for example, a fluorescent dye for laser such as coumarin is doped with an aluminum complex of 8-hydroxyquinoline as a host material (J. Appl. Ph.
ys. , 65, 3610, 1989). Also in the present invention, the emission characteristics of the device can be further improved by doping the above-mentioned electron transport material as a host material with various fluorescent dyes at 10 −3 to 10 mol%. The thickness of the electron transport layer 5 is usually 10 to 200.
nm, preferably 30-100 nm.
【0031】有機電界発光素子の発光効率をさらに向上
させる方法として、図2に示すように電子輸送層5の上
にさらに他の電子輸送層5bを積層することもできる。
この電子輸送層5bに用いられる化合物には、陰極から
の電子注入が容易で、電子の輸送能力がさらに大きいこ
とが要求される。この様な電子輸送材料としては、例え
ば、As a method for further improving the luminous efficiency of the organic electroluminescence device, another electron transport layer 5b may be laminated on the electron transport layer 5 as shown in FIG.
The compound used for the electron transport layer 5b is required to be capable of easily injecting electrons from the cathode and having a further high electron transporting ability. As such an electron transport material, for example,
【0032】[0032]
【化5】 Embedded image
【0033】[0033]
【化6】 [Chemical 6]
【0034】などのオキサジアゾール誘導体(App
l.Phys.Lett.,55巻,1489頁,19
89年;Jpn.J.Appl.Phys.,31巻,
1812頁,1992年)やそれらをポリメチルメタク
リレート等の樹脂に分散した系(Appl.Phys.
Lett.,61巻,2793頁,1992年)、また
は、n型水素化非晶質炭化シリコン、n型硫化亜鉛、n
型セレン化亜鉛等が挙げられる。電子輸送層5bの膜厚
は、通常、5〜200nm、好ましくは10〜100n
mである。Oxadiazole derivatives such as (App
l. Phys. Lett. , 55, 1489, 19
1989; Jpn. J. Appl. Phys. , 31 volumes,
1812, 1992) or a system in which they are dispersed in a resin such as polymethylmethacrylate (Appl. Phys.
Lett. , 61, 2793, 1992), or n-type hydrogenated amorphous silicon carbide, n-type zinc sulfide, n
Examples include type zinc selenide. The thickness of the electron transport layer 5b is usually 5 to 200 nm, preferably 10 to 100 n.
m.
【0035】また電子輸送層と陰極6との間に界面層5
cを設けることも可能である(図2〜3参照)。界面層
の役割としては、電子輸送層との親和性があると同時に
陰極との密着性がよく、かつ、化学的に安定で陰極形成
時及び/または形成後の電子輸送層と陰極の反応を抑制
する効果を有することが挙げられる。また、均一な薄膜
形状を与えることも陰極との密着性の点で重要である。
このような役割を果たす材料として、芳香族アミン化合
物(特願平5−290728号公報)、フェニルカルバ
ゾール骨格を有する化合物(特願平6−199562号
公報)、ポリ−ビニルカルバゾール誘導体(特願平6−
200942)等が挙げられる。An interface layer 5 is provided between the electron transport layer and the cathode 6.
It is also possible to provide c (see FIGS. 2-3). The role of the interface layer is that it has an affinity with the electron transport layer and at the same time has good adhesiveness with the cathode, and is chemically stable, so that the reaction between the electron transport layer and the cathode during and / or after the formation of the cathode can be performed. It has a suppressing effect. It is also important to provide a uniform thin film shape from the viewpoint of adhesion with the cathode.
As a material that plays such a role, an aromatic amine compound (Japanese Patent Application No. 5-290728), a compound having a phenylcarbazole skeleton (Japanese Patent Application No. 6-199562), and a poly-vinylcarbazole derivative (Japanese Patent Application No. 6-
20092) and the like.
【0036】上記に示した界面層を形成する場合、これ
らの化合物を混合して用いてもよい。また界面層の膜の
安定性を向上させる目的で他の蛍光色素、発光材料等を
混合することもできる。これらの混合する材料として
は、例えば、芳香族アミンからなる化合物、クマリン誘
導体等のレーザー用色素、ペリレン、ルブレン等の多環
芳香族色素、キナクリドン等の有機顔料、8−ヒドロキ
シキノリン金属錯体等が挙げられる。When forming the above-mentioned interface layer, these compounds may be mixed and used. Further, for the purpose of improving the stability of the film of the interface layer, other fluorescent dyes, light emitting materials and the like can be mixed. Examples of the materials to be mixed include compounds consisting of aromatic amines, laser dyes such as coumarin derivatives, polycyclic aromatic dyes such as perylene and rubrene, organic pigments such as quinacridone, and 8-hydroxyquinoline metal complexes. Can be mentioned.
【0037】電子輸送層又は界面層の上には、陰極6が
設けられる。陰極6の膜厚は通常、陽極2と同様であ
る。また、図1には示していないが、陰極6の上にさら
に基板1と同様の基板を設けることもできる。但し、陽
極2と陰極6の少なくとも一方は透明性の良いことがE
L素子としては必要である。このことから、陽極2と陰
極6の一方は、10〜500nmの膜厚であることが好
ましく、透明性の良いことが望まれる。A cathode 6 is provided on the electron transport layer or the interface layer. The film thickness of the cathode 6 is usually the same as that of the anode 2. Although not shown in FIG. 1, a substrate similar to the substrate 1 may be further provided on the cathode 6. However, it is required that at least one of the anode 2 and the cathode 6 has good transparency.
It is necessary as an L element. From this, one of the anode 2 and the cathode 6 preferably has a film thickness of 10 to 500 nm and is desired to have good transparency.
【0038】本発明の有機電界発光素子は、必要に応じ
て、保護膜を形成し、さらに素子全体を封止することが
できる。保護膜の材料としてはAl、Ni、Au、Ag
等の金属(特開平3−141588号公報、特開平4−
6795号公報、特開平4−19993号公報、米国特
許第5,059,862号、特開平4−363896号
公報、特開平5−315078号公報)、金属の酸化物
(特開平4−212284号公報、特開平4−7388
6号公報、特開平5−335080号公報)、金属のフ
ッ化物(特開平4−212284号公報)、金属の硫化
物(特開平4−212284号公報)、金属の窒化物
(特開平4−73886号公報)、高分子(特開平4−
137483号公報、特開平4−206386号公報、
特開平4−233192号公報、特開平4−26709
7号公報、特開平4−355096号公報)、プラズマ
重合膜(特開平5−101886号公報)等が挙げられ
る。封止方法としては、素子を気密ケースに入れて内部
に酸素吸着剤や水分吸着剤を入れる方法(特開平3−3
7991号公報、特開平3−261091号公報)、素
子を不活性液体やオイル中に入れる方法(特開平4−3
63890号公報、特開平5−36475号公報、特開
平5−41281号公報、特開平5−114486号公
報、特開平5−129080号公報)、光硬化樹脂を使
用する方法(特開平4−267097号公報、特開平5
−182759号公報、特開平5−290976号公
報)等が挙げられる。In the organic electroluminescent device of the present invention, a protective film may be formed, if necessary, and the entire device may be sealed. The material of the protective film is Al, Ni, Au, Ag
And other metals (JP-A-3-141588, JP-A-4-141588)
6795, JP 4-19993, US Pat. No. 5,059,862, JP 4-363896, JP 5-315078), and metal oxides (JP 4-212284). Japanese Patent Laid-Open No. 4-7388
6, JP-A-5-335080), metal fluoride (JP-A-4-212284), metal sulfide (JP-A-4-212284), metal nitride (JP-A-4-212284). No. 73886), polymer (JP-A-4-
Japanese Patent No. 137483, Japanese Patent Laid-Open No. 4-206386,
JP-A-4-233192, JP-A-4-26709
No. 7, JP-A-4-355096), plasma polymerized film (JP-A-5-101886) and the like. As a sealing method, the element is placed in an airtight case and an oxygen adsorbent or a water adsorbent is placed inside (Japanese Patent Laid-Open No. 3-3).
7991, JP-A-3-261091), a method of putting an element in an inert liquid or oil (JP-A-4-3).
No. 63890, No. 5-36475, No. 5-41281, No. 5-114486, No. 5-129080, and a method using a photocurable resin (No. 4-267097). Japanese Patent Laid-Open Publication No. Hei 5
No. 182759, JP-A No. 5-290976) and the like.
【0039】さらに、本発明の有機電界発光素子は、初
期の発光特性を早期に安定化させるためにエージングを
行なうこともできる。エージングの方法は特に限定され
ず、例えば、実際に素子を駆動させるときの電流密度の
1〜1000倍の電流密度で予め駆動することにより行
なうことができる。Further, the organic electroluminescent device of the present invention can be subjected to aging in order to stabilize the initial light emitting characteristics at an early stage. The aging method is not particularly limited, and it can be performed, for example, by previously driving with a current density of 1 to 1000 times the current density when actually driving the element.
【0040】一般に、表示素子や光源として実用上要求
される発光輝度は、50〜100cd/m2 である。こ
の輝度を達成するために、本発明の有機電界発光素子
は、通常、0.1〜100mA/cm2 の範囲の電流密
度で駆動される。ここで電流密度は、パネルの場合は各
画素に流れる電流を画素の面積で割った値であり、光源
の場合は全電流を発光部の面積で割った値である。In general, the emission luminance required practically as a display device or a light source is 50 to 100 cd / m 2 . In order to achieve this brightness, the organic electroluminescent device of the present invention is usually driven at a current density in the range of 0.1 to 100 mA / cm 2 . Here, the current density is a value obtained by dividing the current flowing in each pixel by the area of the pixel in the case of a panel, and is a value obtained by dividing the total current by the area of the light emitting portion in the case of a light source.
【0041】また、有機電界発光素子をディスプレイパ
ネルとして用いるためには、一般にマトリクスアドレス
方式(特開平2−66873号公報;電気通信学会技術
研究報告,OME89−46,37,1989年)が採
用される。この単純マトリクスパネルにおいては前記陽
極及び陰極がXYマトリクスを形成し、それらはX個の
データラインとY本のスキャンラインに対応する。この
様な単純マトリクスパネルのエージングにおいてはX個
のデータをすべてONにした状態でスキャンラインを順
次ONにしていく方法がとられる。このエージング方法
においては各スキャンラインはYの数に応じたデューテ
ィでパルス的に駆動されることになる。エージングをさ
らに高速で行うためには、スキャンラインを外部ですべ
て短絡させて行う方式でもよい。In order to use the organic electroluminescent device as a display panel, a matrix address method (Japanese Patent Laid-Open No. 2-66873; IEICE Technical Report, OME 89-46, 37, 1989) is generally adopted. It In this simple matrix panel, the anode and the cathode form an XY matrix, which corresponds to X data lines and Y scan lines. In the aging of such a simple matrix panel, a method of sequentially turning on the scan lines while all X data are turned on is adopted. In this aging method, each scan line is pulse-driven with a duty corresponding to the number of Y's. In order to perform the aging at a higher speed, a method in which all scan lines are short-circuited externally may be used.
【0042】上記の単純マトリクス型のパネルではクロ
ストークの問題や画素数が増えたときのデューティが非
常に小さくなるために発光輝度が低下する問題がある
が、これらの問題を解決するためにアクティブ・マトリ
クス回路で駆動することが考えられる(特開平2−14
8687号公報等)。上記のアクティブ・マトリクス型
パネルの場合は、各画素に対応するデータをすべてON
にしてエージングすればよい。The above-mentioned simple matrix type panel has a problem of crosstalk and a problem that the light emission luminance is lowered because the duty becomes very small when the number of pixels is increased. However, in order to solve these problems, the active matrix is active. Driving with a matrix circuit is conceivable (Japanese Patent Laid-Open No. 2-14
8687, etc.). In the case of the above active matrix type panel, all the data corresponding to each pixel is turned on.
Then just age it.
【0043】[0043]
【実施例】次に、本発明の具体的態様を実施例によって
更に説明するが、本発明はその要旨を越えない限り、以
下の実施例の記載によって限定されるものではない。 実施例1 図1に示す構造を有する有機電界発光素子を以下の方法
で作製した。ガラス基板上にITO透明導電膜を120
nm堆積したものを、アセトンで超音波洗浄、純水で水
洗、イソプロピルアルコールで超音波洗浄、乾燥窒素で
乾燥、UV/オゾン洗浄を行った後、真空蒸着装置内に
設置して、装置内の真空度が2×10-6Torr以下になる
まで油拡散ポンプを用いて排気した。EXAMPLES Next, specific embodiments of the present invention will be further described by way of examples, but the present invention is not limited by the following description of the examples as long as the gist thereof is not exceeded. Example 1 An organic electroluminescent device having the structure shown in FIG. 1 was produced by the following method. 120 transparent ITO conductive film on the glass substrate
After performing ultrasonic cleaning with acetone, water cleaning with pure water, ultrasonic cleaning with isopropyl alcohol, drying with dry nitrogen, and UV / ozone cleaning, the product deposited in a vacuum vapor deposition apparatus is installed in the apparatus. It was evacuated using an oil diffusion pump until the degree of vacuum became 2 × 10 −6 Torr or less.
【0044】有機正孔注入層材料として、前記表−2の
P−2−1の構造式で示される銅フタロシアニン(Cu
Pc)をモリブデン製のボートに入れ、加熱蒸着を行っ
た。この時の真空度は5×10-5Torrで、蒸着時間1分
で膜厚20nmの有機正孔注入層3を得た。この基板を
大気中に取り出し、トルエン溶媒中に浸漬し、30秒間
溶媒処理を行った。この基板を再び真空蒸着装置内に設
置して、装置内の真空度が2×10-6Torr以下になるま
で油拡散ポンプを用いて排気した。この基板に有機正孔
輸送層材料として芳香族アミン化合物(H−1)As a material for the organic hole injection layer, copper phthalocyanine (Cu) represented by the structural formula of P-2-1 in Table 2 above is used.
Pc) was put in a molybdenum boat and heat vapor deposition was performed. At this time, the degree of vacuum was 5 × 10 −5 Torr, and an organic hole injecting layer 3 having a film thickness of 20 nm was obtained in a vapor deposition time of 1 minute. This substrate was taken out into the atmosphere, immersed in a toluene solvent, and subjected to a solvent treatment for 30 seconds. This substrate was set in the vacuum vapor deposition apparatus again, and exhausted using an oil diffusion pump until the degree of vacuum in the apparatus became 2 × 10 −6 Torr or less. On this substrate, an aromatic amine compound (H-1) as an organic hole transport layer material
【0045】[0045]
【化7】 [Chemical 7]
【0046】をセラミックるつぼに入れ、るつぼの周囲
のタンタル線ヒーターで加熱して蒸着を行った。この時
のるつぼの温度は、190〜210℃の範囲で制御し
た。蒸着時の真空度は4.0×10-6Torrで、蒸着時間
1分30秒で膜厚60nmの有機正孔輸送層4を得た。
次に、有機電子輸送材料として、以下の構造式に示すア
ルミニウムの8−ヒドロキシキノリン錯体、Al(C9H6
NO)3(E−1)[0046] The sample was placed in a ceramic crucible and heated by a tantalum wire heater around the crucible for vapor deposition. The temperature of the crucible at this time was controlled in the range of 190 to 210 ° C. The degree of vacuum during vapor deposition was 4.0 × 10 −6 Torr, and an organic hole transport layer 4 having a film thickness of 60 nm was obtained with a vapor deposition time of 1 minute and 30 seconds.
Next, as an organic electron transporting material, an aluminum 8-hydroxyquinoline complex represented by the following structural formula, Al (C 9 H 6
NO) 3 (E-1)
【0047】[0047]
【化8】 Embedded image
【0048】を上記有機正孔輸送層4の上に同様にして
蒸着を行なった。この時のるつぼの温度は450〜46
0℃の範囲で制御した。蒸着時の真空度は2.5×10
-6Torrで、蒸着時間1分30秒で、膜厚75nmの電子
輸送層5を得た。この層は発光層としての役割をも果た
す。The above was vapor-deposited on the organic hole transport layer 4 in the same manner. The temperature of the crucible at this time is 450-46
Control was performed in the range of 0 ° C. The degree of vacuum during vapor deposition is 2.5 x 10
An electron transport layer 5 having a film thickness of 75 nm was obtained with a deposition time of 1 minute and 30 seconds at -6 Torr. This layer also serves as a light emitting layer.
【0049】最後に陰極6として、マグネシウムと銀の
合金を2元同時蒸着法によって膜厚150nmで蒸着し
て形成した。蒸着はモリブデンボートを用いて、真空度
は、1×10-5Torr、蒸着時間は2分30秒で光沢のあ
る膜が得られた。マグネシウムと銀の原子比は10:1
であった。Finally, a cathode 6 was formed by depositing an alloy of magnesium and silver with a film thickness of 150 nm by the binary simultaneous vapor deposition method. A molybdenum boat was used for vapor deposition, the degree of vacuum was 1 × 10 −5 Torr, and the vapor deposition time was 2 minutes and 30 seconds to obtain a glossy film. The atomic ratio of magnesium to silver is 10: 1.
Met.
【0050】この様にして作製した有機電界発光素子の
ITO電極(陽極)にプラス、マグネシウム・銀合金電
極(陰極)にマイナスの直流電圧を印加して発光を測定
した。この素子は、5V印加時に6.1mA/cm2 の
電流密度が得られ、その時の輝度は130cd/m2 で
あった。また10V印加時に253mA/cm2 の電流
密度が得られ、その時の輝度は、5412cd/m2 で
あった。Light emission was measured by applying a positive DC voltage to the ITO electrode (anode) and a negative DC voltage to the magnesium-silver alloy electrode (cathode) of the organic electroluminescence device thus produced. With this device, a current density of 6.1 mA / cm 2 was obtained when 5 V was applied, and the brightness at that time was 130 cd / m 2 . A current density of 253 mA / cm 2 was obtained when 10 V was applied, and the luminance at that time was 5412 cd / m 2 .
【0051】CuPc膜の表面形状をトルエン溶媒処理
の前後にSEMで観察したところ、処理前の表面形状は
基板の粒界の影響を受けた粒状の形状であり、処理後の
それは棒状の形状であった。また、それぞれの膜の粗度
はRaで、処理前で0.9nm、処理後で1.2nmで
あった。When the surface shape of the CuPc film was observed by SEM before and after the toluene solvent treatment, the surface shape before the treatment was a granular shape affected by the grain boundaries of the substrate, and after the treatment, it was a rod shape. there were. The roughness of each film was Ra, which was 0.9 nm before the treatment and 1.2 nm after the treatment.
【0052】比較例1 正孔注入層を有せず、正孔輸送層が60nmの膜厚であ
る以外は実施例1と同様に素子を作製した。この素子
は、14V印加時に4.6mA/cm2 の電流密度が得
られ、その時の輝度は156cd/m2 であった。実施
例1と比較例1の素子を電流密度15mA/cm2の定
電流密度で駆動した時の電圧の変化の様子を図4に示
す。有機溶媒処理をしたCuPc層を有する素子は、9
00時間駆動後も安定であり、初期より1V程度の電圧
上昇があるだけであった。Comparative Example 1 A device was prepared in the same manner as in Example 1 except that the hole injection layer was not provided and the hole transport layer had a thickness of 60 nm. This device obtained a current density of 4.6 mA / cm 2 when a voltage of 14 V was applied, and the luminance at that time was 156 cd / m 2 . FIG. 4 shows how the voltage changes when the devices of Example 1 and Comparative Example 1 are driven at a constant current density of 15 mA / cm 2 . The device having the CuPc layer subjected to the organic solvent treatment is 9
It was stable even after being driven for 00 hours, and had a voltage increase of about 1 V from the initial stage.
【0053】比較例2 有機溶媒で処理をしなかった他は、実施例1と同様にし
て素子を作製した。実施例1とこの素子とを15mA/
cm2の定電流密度で駆動した時の電圧の変化の様子を
図5に示す。この素子は、350時間の駆動で駆動電圧
が6.5V上昇した。Comparative Example 2 A device was prepared in the same manner as in Example 1 except that the treatment with the organic solvent was omitted. Example 1 and this element are 15 mA /
FIG. 5 shows how the voltage changes when driven at a constant current density of cm 2 . The driving voltage of this device increased by 6.5 V after driving for 350 hours.
【0054】[0054]
【発明の効果】本発明の有機電界発光素子によれば、陽
極、正孔注入層、正孔輸送層、電子輸送層及び陰極が基
板上に順次設けられ、正孔注入層にポルフィリン化合物
を使用し、かつ有機溶媒で処理することにより膜がより
安定化され、長期に亙り、均一な発光面を得ることがで
き、安定した発光特性を得ることができる。従って、本
発明のEL素子はフラットパネル・ディスプレイ(例え
ばOAコンピュータ用や壁掛けテレビ)の分野や面発光
体としての特徴を生かした光源(例えば、複写機の光
源、液晶ディスプレイや計器類のバックライト光源)、
表示板、標識灯への応用が考えられ、その技術的価値は
大きいものである。According to the organic electroluminescence device of the present invention, an anode, a hole injection layer, a hole transport layer, an electron transport layer and a cathode are sequentially provided on a substrate, and a porphyrin compound is used for the hole injection layer. In addition, by treating with an organic solvent, the film is more stabilized, a uniform light emitting surface can be obtained over a long period of time, and stable light emitting characteristics can be obtained. Therefore, the EL element of the present invention is a light source (for example, a light source of a copying machine, a liquid crystal display or a backlight of an instrument) that makes use of the characteristics of a flat panel display (for example, for an OA computer or a wall-mounted television) or a surface light emitter. light source),
It can be applied to display boards and marker lights, and its technical value is great.
【図1】本発明の有機電界発光素子の層構成の一例を示
した模式的断面図。FIG. 1 is a schematic cross-sectional view showing an example of a layer structure of an organic electroluminescent element of the present invention.
【図2】本発明の有機電界発光素子の層構成の別の例を
示した模式的断面図。FIG. 2 is a schematic cross-sectional view showing another example of the layer structure of the organic electroluminescent element of the present invention.
【図3】本発明の有機電界発光素子の層構成のさらに別
の例を示した模式的断面図。FIG. 3 is a schematic cross-sectional view showing still another example of the layer structure of the organic electroluminescent element of the present invention.
【図4】実施例1と比較例1の素子を15mA/cm2
の定電流密度で駆動した時の駆動電圧特性。FIG. 4 shows the devices of Example 1 and Comparative Example 1 at 15 mA / cm 2.
Driving voltage characteristics when driven with a constant current density of.
【図5】実施例1と比較例2の素子を15mA/cm2
の定電流密度で駆動した時の駆動電圧特性。FIG. 5 shows the devices of Example 1 and Comparative Example 2 at 15 mA / cm 2.
Driving voltage characteristics when driven with a constant current density of.
1 基板 2 陽極 3 正孔注入層 4 正孔輸送層 5 電子輸送層 5b 5とは異なる化合物で構成される電子輸送層 5c 界面層 6 陰極 1 substrate 2 anode 3 hole injection layer 4 hole transport layer 5 electron transport layer 5b electron transport layer 5c composed of a compound different from 5 interface layer 6 cathode
Claims (3)
入層、正孔輸送層及び電子輸送層を有する有機電界発光
素子であって、正孔注入層が有機溶媒処理された下記一
般式(1)又は(2)で表されるポルフィリン化合物か
ら構成され、かつ正孔輸送層及び電子輸送層が乾式方法
で成膜されたものであることを特徴とする有機電界発光
素子。 【化1】 (式中R1、R2はそれぞれ独立に、水素、ハロゲン原
子、水酸基、置換基を有していてもよい飽和若しくは不
飽和の脂肪族炭化水素基、置換基を有していてもよい芳
香族炭化水素基、置換基を有していてもよいアルコキシ
基、置換基を有していてもよいアリールオキシ基、置換
基を有していてもよいジアルキルアミノ基、又は置換基
を有していてもよいジアリールアミノ基を表すか、ある
いは、R1とR2は結合して環構造を形成し、置換基を有
していてもよい芳香族炭化水素環、又は、置換基を有し
ていてもよい複素環を表す。またXは、窒素原子又はC
H基を表す。) 【化2】 (式中R3、R4はそれぞれ独立に、水素、ハロゲン原
子、水酸基、置換基を有していてもよい飽和若しくは不
飽和の脂肪族炭化水素基、置換基を有していてもよい芳
香族炭化水素基、置換基を有していてもよいアルコキシ
基、置換基を有していてもよいアリールオキシ基、置換
基を有していてもよいジアルキルアミノ基、又は置換基
を有していてもよいジアリールアミノ基を表すか、ある
いは、R3とR4は結合して環構造を形成し、置換基を有
していてもよい芳香族炭化水素環、又は、置換基を有し
ていてもよい複素環を表す。またYは、窒素原子又はC
H基を表し、Mは遷移金属、遷移金属酸化物又は遷移金
属ハロゲン化物のイオンを表す。)1. An organic electroluminescent device having at least a hole injection layer, a hole transport layer and an electron transport layer between an anode and a cathode, wherein the hole injection layer is treated with an organic solvent. An organic electroluminescent device comprising a porphyrin compound represented by (1) or (2), wherein the hole transport layer and the electron transport layer are formed by a dry method. Embedded image (In the formula, R 1 and R 2 are each independently hydrogen, a halogen atom, a hydroxyl group, a saturated or unsaturated aliphatic hydrocarbon group which may have a substituent, and an aromatic which may have a substituent. Group hydrocarbon group, optionally substituted alkoxy group, optionally substituted aryloxy group, optionally substituted dialkylamino group, or optionally substituted Optionally represents a diarylamino group, or R 1 and R 2 are bonded to each other to form a ring structure, which may have an aromatic hydrocarbon ring which may have a substituent or which has a substituent. And X represents a nitrogen atom or C
Represents an H group. ) (In the formula, R 3 and R 4 are each independently hydrogen, a halogen atom, a hydroxyl group, a saturated or unsaturated aliphatic hydrocarbon group which may have a substituent, and an aromatic which may have a substituent. Group hydrocarbon group, optionally substituted alkoxy group, optionally substituted aryloxy group, optionally substituted dialkylamino group, or optionally substituted Optionally represents a diarylamino group, or R 3 and R 4 are bonded to each other to form a ring structure, which may have a substituent, an aromatic hydrocarbon ring, or a substituent. And Y represents a nitrogen atom or C
Represents a H group, and M represents an ion of a transition metal, a transition metal oxide or a transition metal halide. )
が遷移金属である請求項1に記載の有機電界発光素子。2. The central ion M in the above general formula (2).
The organic electroluminescent device according to claim 1, wherein is a transition metal.
がTiOまたはVOである請求項1に記載の有機電界発
光素子。3. The central ion M in the above general formula (2).
The organic electroluminescent device according to claim 1, wherein is TiO or VO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7010885A JPH08199161A (en) | 1995-01-26 | 1995-01-26 | Organic electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7010885A JPH08199161A (en) | 1995-01-26 | 1995-01-26 | Organic electroluminescent device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08199161A true JPH08199161A (en) | 1996-08-06 |
Family
ID=11762780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7010885A Pending JPH08199161A (en) | 1995-01-26 | 1995-01-26 | Organic electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08199161A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998000474A1 (en) * | 1996-06-28 | 1998-01-08 | Chisso Corporation | Red-emitting material and organic electroluminescent device made by using the same |
| JPH10144469A (en) * | 1996-09-12 | 1998-05-29 | Mitsubishi Chem Corp | Organic electroluminescent device and method of manufacturing the same |
| JPH11233263A (en) * | 1997-11-17 | 1999-08-27 | Lg Electronics Inc | Organic EL device |
| EP0921579A3 (en) * | 1997-11-24 | 1999-12-15 | Lucent Technologies Inc. | Thin film transistor based on substituted phthalocyanines |
| KR20010061874A (en) * | 1999-12-29 | 2001-07-07 | 김덕중 | Porphine derivative-lithium complex and organic electroluminescent device using same |
| KR100322741B1 (en) * | 1998-02-12 | 2002-02-07 | 김순택 | Precursor composition for metal oxide and preparing method thereof |
| JP2003058096A (en) * | 2001-08-20 | 2003-02-28 | Toyota Motor Corp | Organic EL display device |
| JP2005268449A (en) * | 2004-03-17 | 2005-09-29 | Asahi Kasei Corp | Method for modifying condensed polycyclic aromatic compound thin film, condensed polycyclic aromatic compound thin film, and organic semiconductor device |
| US7285339B2 (en) | 1997-11-17 | 2007-10-23 | Lg Electronics Inc. | Organic electroluminescent device with improved long-term stability |
| JP2008218421A (en) * | 1996-09-12 | 2008-09-18 | Mitsubishi Chemicals Corp | Organic electroluminescent device and manufacturing method thereof |
| WO2009056626A1 (en) * | 2007-10-31 | 2009-05-07 | Basf Se | Use of halogenated phthalocyanines |
| JP2009111400A (en) * | 1996-08-12 | 2009-05-21 | Trustees Of Princeton Univ | Non-polymeric flexible organic light-emitting device |
| WO2010109937A1 (en) * | 2009-03-26 | 2010-09-30 | コニカミノルタホールディングス株式会社 | Method for forming thin film, method for forming multilayer thin film having the thin film therein, electronic device, and organic electroluminescence element |
| US8093806B2 (en) * | 2007-06-20 | 2012-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and electronic apparatus |
| US8450925B2 (en) | 2002-01-25 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing thereof |
-
1995
- 1995-01-26 JP JP7010885A patent/JPH08199161A/en active Pending
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333122B1 (en) | 1996-06-28 | 2001-12-25 | Chisso Corporation | Red-emitting material and organic electroluminescent device made by using the same |
| WO1998000474A1 (en) * | 1996-06-28 | 1998-01-08 | Chisso Corporation | Red-emitting material and organic electroluminescent device made by using the same |
| JP2009111400A (en) * | 1996-08-12 | 2009-05-21 | Trustees Of Princeton Univ | Non-polymeric flexible organic light-emitting device |
| JP2012104492A (en) * | 1996-08-12 | 2012-05-31 | Trustees Of Princeton Univ | Non-polymeric flexible organic light emitting device |
| JP2008218421A (en) * | 1996-09-12 | 2008-09-18 | Mitsubishi Chemicals Corp | Organic electroluminescent device and manufacturing method thereof |
| JPH10144469A (en) * | 1996-09-12 | 1998-05-29 | Mitsubishi Chem Corp | Organic electroluminescent device and method of manufacturing the same |
| JPH11233263A (en) * | 1997-11-17 | 1999-08-27 | Lg Electronics Inc | Organic EL device |
| US7847286B2 (en) | 1997-11-17 | 2010-12-07 | Lg Electronics Inc. | Semiconductor device |
| US7638794B2 (en) | 1997-11-17 | 2009-12-29 | Lg Electronics Inc. | Organoelectroluminescent device having a substrate, a negative electrode, an organic electroluminescent layer, a buffer layer containing an adhesion-increasing porphyrinic compound and a cathode electrode |
| US7285339B2 (en) | 1997-11-17 | 2007-10-23 | Lg Electronics Inc. | Organic electroluminescent device with improved long-term stability |
| EP0921579A3 (en) * | 1997-11-24 | 1999-12-15 | Lucent Technologies Inc. | Thin film transistor based on substituted phthalocyanines |
| KR100322741B1 (en) * | 1998-02-12 | 2002-02-07 | 김순택 | Precursor composition for metal oxide and preparing method thereof |
| KR20010061874A (en) * | 1999-12-29 | 2001-07-07 | 김덕중 | Porphine derivative-lithium complex and organic electroluminescent device using same |
| JP2003058096A (en) * | 2001-08-20 | 2003-02-28 | Toyota Motor Corp | Organic EL display device |
| US8450925B2 (en) | 2002-01-25 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing thereof |
| US8747178B2 (en) | 2002-01-25 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light emitting device |
| US8937429B2 (en) | 2002-01-25 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing thereof |
| JP2005268449A (en) * | 2004-03-17 | 2005-09-29 | Asahi Kasei Corp | Method for modifying condensed polycyclic aromatic compound thin film, condensed polycyclic aromatic compound thin film, and organic semiconductor device |
| US8368301B2 (en) | 2007-06-20 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and electronic apparatus |
| US8531104B2 (en) | 2007-06-20 | 2013-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and electronic apparatus |
| US8093806B2 (en) * | 2007-06-20 | 2012-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and electronic apparatus |
| WO2009056626A1 (en) * | 2007-10-31 | 2009-05-07 | Basf Se | Use of halogenated phthalocyanines |
| CN101842917B (en) | 2007-10-31 | 2012-10-03 | 巴斯夫欧洲公司 | Use of halogenated phthalocyanines |
| US8658290B2 (en) | 2007-10-31 | 2014-02-25 | Basf Se | Use of halogenated phthalocyanines |
| AU2008320815B2 (en) * | 2007-10-31 | 2014-07-03 | Basf Se | Use of halogenated phthalocyanines |
| JP2011504292A (en) * | 2007-10-31 | 2011-02-03 | ビーエーエスエフ ソシエタス・ヨーロピア | Use of halogenated phthalocyanines |
| WO2010109937A1 (en) * | 2009-03-26 | 2010-09-30 | コニカミノルタホールディングス株式会社 | Method for forming thin film, method for forming multilayer thin film having the thin film therein, electronic device, and organic electroluminescence element |
| JP5594286B2 (en) * | 2009-03-26 | 2014-09-24 | コニカミノルタ株式会社 | Method for manufacturing organic electroluminescent element, and organic electroluminescent element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4058842B2 (en) | Organic electroluminescence device | |
| JP4144192B2 (en) | Method for manufacturing organic electroluminescent device | |
| JP3412076B2 (en) | Organic EL device | |
| JPH06325871A (en) | Organic electroluminescent element | |
| JPH0753953A (en) | Organic electroluminescent device | |
| JPH06267658A (en) | Organic el element | |
| JPH08199161A (en) | Organic electroluminescent device | |
| JP2001223084A (en) | Organic electroluminescent device | |
| JPH08325564A (en) | Organic thin film EL device | |
| JPH09289081A (en) | Organic electroluminescent device | |
| JP3552317B2 (en) | Manufacturing method of organic electroluminescent device | |
| JP2000150169A (en) | Organic electroluminescent device | |
| JP3463364B2 (en) | Organic electroluminescent device | |
| JP4030608B2 (en) | Organic electroluminescent device and manufacturing method thereof | |
| JPH0888083A (en) | Organic electroluminescent device | |
| JP3284766B2 (en) | Organic electroluminescent device | |
| JP3482729B2 (en) | Organic electroluminescent device | |
| JPH08288064A (en) | Method for manufacturing organic electroluminescent device | |
| JPH06330032A (en) | Organic electroluminescent device | |
| JP3284737B2 (en) | Organic electroluminescent device | |
| JPH1012381A (en) | Organic electroluminescent device | |
| JPH0762526A (en) | Method for manufacturing organic electroluminescent device | |
| JP2002025780A (en) | Organic electroluminescent element | |
| JP3925116B2 (en) | Organic electroluminescence device | |
| JPH0860145A (en) | Organic electroluminescent device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |