JPH08213328A - Metal-organic vapor phase epitaxy apparatus and metal-organic vapor phase growth method using the same - Google Patents

Abstract

(57) [Summary] [Object] To provide a metal-organic vapor phase epitaxy apparatus having a simple structure and capable of continuously performing epitaxial growth of III-V group compound semiconductors, and a vapor phase epitaxy method using the same. [Structure] This apparatus includes a wafer mounting chamber A, a preheating chamber B ₁ ,
B ₂ , a plurality of vapor phase growth chambers C _{1 to} C ₄ , a cooling chamber D ₁ ,
D ₂ and a wafer desorption chamber E are arranged in series in this order, and the susceptor 2 on which the wafer 5 is mounted is sequentially sent out from the wafer mounting chamber A to form an epitaxial growth layer of a target III-V compound semiconductor on the wafer 5. Is what
The preheating chambers B ₁ and B ₂ , the vapor phase growth chambers C _{1 to} C ₄ and the cooling chambers D ₁ and D ₂ are stretched from the wafer mounting chamber A to the wafer desorption chamber E, and the vertical through holes 3 are formed. 1 common to all rooms
A plate body 1, a susceptor 2 arranged on one surface at the position of the vertical through hole 3 of the plate body 1, and a gas flow channel 8 arranged on the other surface of the vertical through hole 3 of the plate body 1. Consists of.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal-organic vapor phase epitaxy apparatus and a metal-organic vapor phase epitaxy method using the same, and more particularly, to an organic metal vapor phase epitaxy apparatus capable of continuously performing epitaxial growth of a compound semiconductor on a wafer. The present invention relates to a metal vapor phase growth apparatus and a metal organic vapor phase growth method using the same.

[0002]

2. Description of the Related Art When manufacturing high-speed electronic devices such as field effect transistors (FETs) and high electron mobility transistors (HEMTs), III-V such as GaAs and AlGaAs on a semiconductor substrate (wafer). An epitaxial wafer having a structure in which a plurality of semiconductor thin layers formed by epitaxially growing a group compound semiconductor is laminated is used.

In manufacturing the FET, as shown in FIG. 15, on the substrate 14 made of GaAs, for example, an epitaxial growth layer 14a made of undoped GaAs having a thickness of 500 nm and undoped Al having a thickness of 1000 nm are used.
Epitaxial growth layer 14b made of GaAs, thickness 4
An epitaxial wafer having a structure in which an epitaxial growth layer 14c made of 0 nm Si-doped GaAs is stacked in this order is used.

Further, in manufacturing the HEMT, as shown in FIG.
As described above, for example, on the substrate 15 made of GaAs, for example, the epitaxial growth layer 15a made of undoped GaAs having a thickness of 500 nm and the epitaxial growth layer 15 made of undoped AlGaAs having a thickness of 1000 nm are provided.
b, epitaxial growth layer 15c made of undoped GaAs having a thickness of 50 nm, undoped AlG having a thickness of 2 nm
Epitaxial growth layer 15d made of aAs, thickness 16
An epitaxial wafer having a structure in which an epitaxial growth layer 15e made of Si-doped AlGaAs having a thickness of 50 nm and an epitaxial growth layer 15f made of Si-doped GaAs having a thickness of 50 nm are stacked in this order is used.

These epitaxial wafers are usually manufactured by applying a metal organic chemical vapor deposition method (MOVPE method) or a molecular beam epitaxial growth method (MBE method). For example, in the MOVPE method, a predetermined source gas, for example, TMGa ((C
H ₃ ) ₃ Ga) or TMAl ((CH ₃ ) ₃ Al), arsine (AsH ₃ ) as a source gas of a group V element, disilane (Si ₂ H ₆ ) as a doping gas, etc. A predetermined compound semiconductor is epitaxially grown on a substrate set in the apparatus by introducing it together with H ₂ to advance a predetermined gas phase reaction.

However, this vapor phase growth reaction is usually carried out in a batch system. This process is purge →
The process consists of temperature increase → growth → temperature decrease → purge, and there is a considerable proportion of the reaction device in steps other than growth, so it cannot be said that productivity is high. For the purpose of solving such problems and improving the productivity during manufacturing, a method and apparatus for sequentially and continuously forming each epitaxial growth layer have been proposed (Japanese Patent Laid-Open No. 59-17238 and Japanese Laid-Open Patent Publication No. Hei 59 (1999) -238238). 2-1409
18).

In each of the metal-organic vapor phase epitaxy apparatuses disclosed in these publications, a plurality of reaction chambers for performing a gas phase reaction are arranged in the wafer transfer direction, and the wafers are sequentially fed into each reaction chamber. Therefore, a predetermined compound semiconductor is sequentially epitaxially grown. In these devices, the type and amount of the raw material gas supplied to the respective reaction chambers are different in each reaction chamber, so that the raw material gas is not mixed between adjacent reaction chambers. .

For example, in the case of the device disclosed in Japanese Patent Laid-Open No. 59-17238, a purge gas outlet and a partition wall are arranged at the boundary of each reaction chamber, and the purge gas is blown from the purge gas outlet to supply the raw material gas in each reaction chamber. Suppresses the mixing of. Further, in the case of the device disclosed in Japanese Patent Laid-Open No. 2-140918, a movable shutter is arranged at the boundary of each reaction chamber to suppress the mixing of the raw material gases.

[0009]

In any of the above-mentioned apparatuses, the wafers are sequentially fed into the reaction chamber, and the epitaxial growth layers of the compound semiconductor of the desired type and thickness are sequentially formed therein to continuously produce the epitaxial wafers. To be able to do. However, the above-mentioned device has a very complicated structure. In particular, the means for suppressing the mixing of the source gases in each reaction chamber becomes complicated.
Therefore, the equipment cost when the device is actually installed must be increased.

The present invention solves the above-mentioned problems in an apparatus for continuously manufacturing epitaxial wafers by sequentially stacking epitaxial growth layers by a metal organic chemical vapor deposition method, has a very simple structure, and satisfies the standard. It is an object of the present invention to provide a metal-organic vapor phase epitaxy apparatus capable of continuously producing epitaxial wafers and a metal-organic vapor phase epitaxy method using the same.

[0011]

In order to achieve the above-mentioned object, in the present invention, a wafer mounting chamber, a preheating chamber, a plurality of vapor phase growth chambers, a cooling chamber, and a wafer desorption chamber are arranged in series in this order. Then, the susceptor on which the wafer is mounted is sequentially sent out from the wafer mounting chamber, and the susceptor is moved to the wafer desorption chamber to form an epitaxial growth layer of a target III-V compound semiconductor on the wafer. In the vapor phase growth apparatus, the preheating chamber, the vapor phase growth chamber, and the cooling chamber are one plate body common to the chambers extending from the wafer mounting chamber to the wafer desorption chamber, and one of the plate bodies. On the surface of the susceptor arranged along the longitudinal direction of the plate body, and on the other surface of the plate body and a gas flow path arranged orthogonal to the longitudinal direction of the plate body, the susceptor Is formed with a recess for mounting a wafer on the surface facing the plate, and the plate has a plurality of vertical through holes formed at predetermined intervals in the longitudinal direction thereof.
The upper and lower through holes have a shape larger than the wafer mounted in the recess of the susceptor and smaller than the outer shape of the susceptor, and a gas supply port and a gas discharge port are connected to the gas flow path, and The gas channel has a channel width capable of encompassing the upper and lower through holes when viewed in a plan view, and the susceptors are in close contact with each other on their side surfaces and are in close contact with the plate body on the surface of the plate body. A metal-organic vapor phase epitaxy apparatus is provided which is capable of being sequentially moved in its longitudinal direction. Further, the above-mentioned apparatus is operated to operate a group III-V group wafer on a wafer mounted in a recess of a susceptor. When forming an epitaxial growth layer of a compound semiconductor, by moving the susceptor to the position of the upper and lower through holes of the plate body, the susceptor and the vertical through hole and a gas flow path arranged on the other surface of the plate body. Form a closed space between A gas, a source gas, a doping gas, and a carrier gas are supplied to the space to perform a gas phase reaction, and after completion of the gas phase reaction, while moving the susceptor to the position of the next upper and lower through holes of the plate, A metal-organic vapor phase epitaxy method characterized in that the supply of a group III element source gas and a doping gas to a gas channel is cut off, and only a group V element source gas and a carrier gas are supplied.

[0012]

In the apparatus of the present invention, the size of the upper and lower through holes formed in the plate is smaller than the outer shape of the susceptor arranged so that one surface of the plate can be moved in close contact with the susceptor. It is larger than the wafer mounted in the concave part of the. Further, it is equal to or smaller than the passage width of the gas passage arranged on the other surface of the plate body.

Therefore, when the susceptor is moved to the position of a certain vertical through hole so that the in-plane center of the recess of the susceptor and the in-plane center of the vertical through hole coincide with each other, the recess of the susceptor, the vertical through hole and the gas 7 flow path. Thereby forming one closed space. By sequentially sending the susceptor to the device, the closed space is continuously provided from the upstream side to the downstream side of the device corresponding to all of the vertical through holes formed in the longitudinal direction of the plate body.

Therefore, after mounting the wafer in the recess of the susceptor in the wafer mounting chamber, the susceptor is sequentially sent out to the downstream side to continuously form the closed space, and some of the closed spaces on the upstream side are mounted. The wafer is made to function as a preheating chamber for preheating to a predetermined temperature, and a predetermined source gas, a doping gas, and a carrier gas are supplied from a gas supply port to a closed space continuously provided on the downstream side of these preheating chambers. It can function as a vapor phase growth chamber for performing a vapor phase reaction to epitaxially grow a III-V group compound semiconductor on the wafer surface. Then, the closed space continuously provided on the downstream side of the vapor phase growth chamber can function as a cooling chamber for cooling the wafer sent from the vapor phase growth chamber.

Therefore, according to the apparatus of the present invention, after mounting the wafer in the concave portion of the susceptor in the wafer mounting chamber and sequentially sending the susceptor to the downstream side, the susceptor is preheated to the above-mentioned preheating chamber and a plurality of gas phase. The growth chamber and the cooling chamber are sequentially formed while moving from the upstream side to the downstream wafer desorption chamber. At this time, from the upstream side to the downstream side, one vapor phase growth chamber is independently formed corresponding to the vertical through holes formed in the plate body. Can be sequentially laminated on the wafer surface. That is, the epitaxial wafer can be continuously manufactured.

Further, in the method of the present invention, after forming a predetermined epitaxial growth layer in a certain vapor growth chamber, the susceptor is moved to the downstream side to form another vapor growth chamber, and another epitaxial growth layer is formed there. During film formation, while the susceptor is being moved, supply of the group III element source gas and the doping gas to the gas channel is stopped, and only the group V element source gas and the carrier gas are supplied.

Therefore, since the partial pressure of the source gas of the group V element is always applied to the already formed epitaxial growth layer, the problem that the group V element is desorbed from the epitaxial growth layer does not occur and the epitaxial growth is performed. The surface of the layer is not damaged.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The device of the present invention will be described in detail below with reference to the drawings. First, FIG. 1 is a schematic plan view showing the basic configuration of the embodiment apparatus. In FIG. 1, a wafer mounting chamber A, a preheating chamber B, a plurality of (four chambers in the figure) vapor phase growth chambers C,
The cooling chamber D and the wafer desorption chamber E are arranged in series in this order in the X direction to form the device of the present invention.

The preheating chamber B and the vapor phase growth chambers C _{1 to} C ₄
Are independently provided with heating means (not shown), and by operating these heating means, the preheating chamber B and the vapor phase growth chambers C _{1 to} C ₄ are independently temperature-controlled to a predetermined temperature. You can do it. In this apparatus, after the wafer 5 is mounted in the recess 4 of the susceptor 2 in the wafer mounting chamber A, the susceptors 2 are sequentially sent out in the X direction with their side portions 2a in close contact with each other, and the susceptor 2 is preliminarily heated in the preheating chamber B. After being preheated to a temperature, a predetermined epitaxial growth layer is laminated on the wafer surface while sequentially moving in the vapor phase growth chambers C ₁ , C ₂ , C ₃ , and C ₄ , then cooled in a cooling chamber D, and finally in the wafer desorption chamber. At E, the epitaxial wafer is removed from the susceptor.

Here, the preheating chamber B and the vapor phase growth chamber C ₁ ...
Each of C ₄ and the cooling chamber D includes a susceptor 2, upper and lower through holes 3 formed at a predetermined interval in one plate body 1 stretched in the X direction, and a gas flow path extending in the Y direction. It is composed of 8. The state is shown in Fig. 1 for the vapor phase growth chamber.
2 is a sectional view taken along line II-II of FIG. 2 and FIG.
It is shown in FIG. 3, which is a sectional view taken along line III.

2 and 3, the susceptor 2 is moved from _one side (upper surface in the figure) 1a of the plate 1 from the upstream X ₁ side, and the vertical through hole 3 of the plate 1 and the recess of the susceptor 2 are formed. 4 and 4 overlap each other with their in-plane centers aligned with each other. At this time, the side surface 2a of the susceptor 2 in the X direction is in close contact with the side surface of the adjacent susceptor, and the upper surface 1a of the plate 1 and the lower end surface 2c of the susceptor 2 are also in close contact.

A wafer 5 is mounted on the bottom surface 4a of the recess 4 of the susceptor 2 by locking the periphery of the wafer 5 with a stopper 6. In this case, the depth of the recess 4 is set such that the lower end of the stopper 6 does not protrude from the opening 4b of the recess 4, that is, the lower end surface 2c of the susceptor 2 when the wafer 5 is mounted. The other surface (lower surface in the figure) 1b of the plate body 1 is covered with a cover 7 to form a gas flow path 8 extending in the Y direction of FIG. 1. The gas flow path 8 has a gas supply port 8a. And the gas outlet 8b are connected (FIG. 1).

Here, the vertical through hole 3 of the plate body is smaller than the outer shape of the susceptor 2 and larger than the wafer 5 mounted in the recess of the susceptor, and has a rectangular shape as shown in FIG. 1, for example. Preferably there is. Further, the passage width of the gas flow passage 8 is formed so as to include the above-mentioned vertical through hole 3 in a plan view. Therefore, as shown in FIGS. 1 to 3, when the susceptor 2 is aligned with the upper and lower through holes 3 of the plate body, it is composed of the recess 4 of the susceptor, the upper and lower through holes 3, and the gas flow path 8. One closed space independent from the outside world is formed.

When this closed space is used as a vapor phase growth chamber, the temperature of the wafer 5 is controlled by a heating means (not shown), and a predetermined source gas or the like is supplied to the gas passage 8 from the gas supply port 8a. The raw material gas flows in the Y direction of FIGS. 1 and 3, and in the process of passing through the vertical through holes 3, epitaxial growth proceeds on the surface of the wafer 5 mounted in the recess 4 of the susceptor 2.

At this time, as shown in FIGS. 1 to 3, the passage width of the gas passage 8 and the width of the vertical through hole 3 in the X direction are made the same, and the diameter of the recess 4 of the susceptor 2 is set to the upper and lower sides. Through hole 3
To have the same width in the X direction, or by disposing, for example, a current plate in the middle of the gas supply port 8a and the gas flow path 8, the flow of the raw material gas in the vicinity of the upper and lower through holes 3 can be reduced. It can be a laminar flow parallel to the surface.

When this closed space is used as the preheating chamber B, the group V source gas and the carrier gas may be supplied from the gas supply port 8a to preheat the wafer to a predetermined temperature, and it may be used as the cooling chamber D. In this case, the group V source gas and the carrier gas may be supplied from the gas supply port 8a. It should be noted that the preheating chamber B and the cooling chamber D may be provided one by one corresponding to each of the susceptors 2 sequentially moving from the upstream side, but as shown in FIG. 1, two susceptors are simultaneously provided. It may be provided as a common chamber that can be preheated or cooled.

In the method of the present invention, the wafer 5 is mounted on the susceptor 2 in the wafer mounting chamber A, and the susceptor 2 is sequentially sent out onto the plate body 1 to sequentially form the closed space,
Preheating, vapor-phase growth, and cooling are sequentially performed to continuously produce the desired epitaxial wafer. At this time,
In the process of moving from the position of the closed space where the susceptor is located to the position of the next upper and lower through holes to form the next closed space,
As shown in FIG. 4, the recess 4 of the susceptor 2 may always straddle the two vertical through holes 3, 3.

When the closed space at this time is a vapor phase growth chamber, the source gases flowing through the vapor phase growth chambers are of different types. Therefore, in the method of the present invention, in the process of moving the susceptor 2 in the state shown in FIG.
Of the source gas, the doping gas, and the carrier gas supplied to each vapor phase growth chamber, the supply of the group III element source gas and the doping gas is cut off, and only the mixed gas 9 of the group V element source gas and the carrier gas is supplied. To do.

By doing so, the gas phase reaction is stopped, an undesired epitaxial growth layer is prevented from being formed on the already formed epitaxial growth layer, and the group V is removed from the already formed epitaxial growth layer. Prevent the element from desorbing. In the above description, the susceptor 2 is arranged on the upper surface 1a of the plate body 1. However, in the present invention, the gas passage 8 is formed on the upper surface of the plate body 1, and the susceptor 2 is formed on the lower surface of the plate body 1. May be movably arranged. However, in order to favorably promote the epitaxial growth, it is preferable to dispose the susceptor 2 on the upper surface of the plate body 1 as in the embodiment.

Embodiment 2 FIG. 5 and FIG. 6 are both sectional views showing a closed space formed by using another susceptor. FIG. 5 is a view when viewed from the Y direction of FIG. 3 is a cross-sectional view when viewed from the X direction of FIG. As shown in FIGS. 5 and 6, this susceptor is composed of an outer block 10 made of, for example, high-purity graphite, a bearing 11 made of, for example, ceramics, an inner block 12, and a drop block 13.

A through hole 10a penetrating the upper and lower surfaces is formed at the center of the outer block 10 having a rectangular outer shape. The upper portion of the through hole 10a is a straight hole, and the lower portion of the inner wall is provided with a collar portion 10b that projects toward the center of the through hole 10a. This collar part 10
b of the lower end surface 10c, as shown in FIG. 5, as shown in FIG. 6, it is located away upward by a distance x ₁ from the lower end surface 10d of the outer block.

The through hole 10a has a bearing 1 including an outer ring 11a, bearing balls 11b and an inner ring 11c.
1 is fitted, and further, in the through hole 11d of the inner ring 11c,
The inner block 12 having the same outer diameter as the through hole is fitted. A through hole 12a having substantially the same diameter as the wafer 5 is formed in the center of the inner block 12, and the upper portion thereof is a straight hole. A flange 12b is provided around the inner wall of the lower portion so as to project with a predetermined width toward the center of the through hole 12a.

Therefore, at the location where the collar portion 12b is located, the diameter of the through hole 12a is smaller than the diameter of the wafer to be processed. The flange 12b has a thickness of x ₂ , and the lower end surface 12c and the lower end surface 12d of the entire inner block 12 are flush with each other. Therefore, the lower end surface 10c of the collar portion 10b of the outer block 10, the entire lower end surface 12d of the inner block 12 and the lower end surface 12c of the collar portion 12b are separated from the entire lower end surface 10d of the outer block 10 by x _1. The same plane is formed at the position.

Further, the inner block 12 is in a state of being capable of surface rotation inside the through hole 10a of the outer block 10 via the bearing 11. When mounting the wafer 5 on the susceptor, in the wafer mounting chamber A, the wafer 5 is first dropped into the through hole 12 a of the inner block 12. The wafer 5 is locked by the collar portion 12b below the through hole. After that, a drop block 13 having the same diameter as the through hole 12a may be fitted from above the wafer 5.

As shown in FIGS. 5 and 6, the wafer 5 is fixed in the inner block 12 with its peripheral edge sandwiched between the collar portion 12b and the drop block 13. At this time, in the lower portion of the susceptor, a recess 4 having a depth from the lower end surface 10d of the outer block 10 to the surface of the wafer 5 of (x ₁ + x ₂ ) is formed. When the susceptor on which the wafer is mounted moves to the vertical through hole 3 of the plate 1 in this way, as shown in FIGS. 5 and 6, the gas flow path 8 and the vertical through hole 3 of the plate 1 are formed. And a recess 4 of the susceptor form a closed space.

When the closed space is used as a vapor phase growth chamber, a rotating device (not shown) mounted on the inner block 12 is driven to move the inner block 12, that is, the wafer 5, into the closed space. Rotate the surface inside. As a result, uniform cutting of the growing thin film can be improved. Example 3 The FET of the structure shown in FIG. 15 is operated by operating the device of the present invention.
An epitaxial wafer was manufactured. This wafer is G
An undoped GaAs epitaxial growth layer 14a having a thickness of 500 nm and a thickness of 1000 n is formed on the aAs wafer 14.
m undoped AlGaAs epitaxial growth layer 14
b, a Si-doped GaAs epitaxial growth layer 14c having a thickness of 40 nm is laminated in this order.
Then, the Si-doped GaAs epitaxial growth layer 14
The designed carrier concentration n in c is n = 1 × 10 ¹⁷
The target is cm ^-3 .

As the susceptor, the outer block 10, the inner block 12, and the depression block 13 are manufactured from high-purity graphite, and the ceramic bearing 11 is prepared. By combining these, the susceptor 2 described in the second embodiment is used. I was there. At this time, the distance between the lower end surface 10c of the collar portion 10b of the outer block 10 and the entire lower end surface 10d: x ₁ is 1.0 mm.
The diameter of the through hole 12a of the inner block 12 is 4 inches (101.6 mm), and the thickness of the flange 12b is x.
₂ was 0.8 mm. Therefore, the depth of the recess 4 in the assembled susceptor is 1.8 mm.

First, in the apparatus shown in FIG.
116 sheets of the above-mentioned susceptor 2 were prepared for A. these
2 for susceptor 2 in order of sending in the X direction₁,
2₂, 2₃…… 2 _i…… 2₁₁₆Was labeled. Well
No, 2₁, 2₂,… 2₈Up to 8 susceptors
It is sent out in the X direction one after another without mounting the c
2 sheets, vapor growth chamber C₁~ C_Four4 sheets, 2 sheets in cooling chamber D
I placed the susceptor.

In this state, the preheating chambers B ₁ and B ₂ and the cooling chamber D
₁ and D ₂ have a flow rate of 20 l / min and vapor phase growth chambers C ₁ and C
While heating H ₂ (carrier gas) at a flow rate of 10 l / min through ₂ , C ₃ and C ₄ , each heating means was driven to start the temperature rise. The temperature distribution between the chambers 20 minutes after the start of heating was measured. FIG. 7 shows the result. Wafer mounting room A
Then, GaAs wafers were mounted on 100 susceptors 2 _{9 to} 2 ₁₀₈ as shown in FIGS. 5 and 6, and 2
₁₀₉ ~ 2 ₁₁₆ eight susceptor is allowed to stand without mounting the GaAs wafer, sequentially feeding in the X direction of these susceptors the wafer mounting chamber A, the preheating chamber B _1, B _2,
The total flow rate of gas in the cooling chambers D ₁ and D ₂ is 20 l / mi
n, the total gas flow rate in the vapor phase growth chambers C _{1 to} C ₄ is 10
100 wafers 2 ₉ to 2 at 1 / min
_An epitaxial growth layer was formed on ₁₀₈ .

At this time, regarding the supply of each source gas and doping gas to each chamber, the mode shown in Table 1 was adopted for each chamber.

[0041]

[Table 1]

When this mode is adopted, the vapor phase growth chamber C ₁
Then undoped GaAs with a growth rate of 0.1 μm / min
An epitaxial growth layer is formed in the vapor phase growth chamber C ₂ ,
For C ₃ , undoped Al at a growth rate of 0.1 μm / min
An GaAs epitaxial growth layer is formed, and in the vapor phase growth chamber C ₄ , an Si-doped GaAs epitaxial growth layer is formed at a growth rate of 0.08 μm / min.

[0043] applying the mode shown in Table 1, the epitaxial wafer for FET while moving the susceptor 2 ₁ to 2 ₁₁₆ based on the sequence shown in Tables 2 to 5 100
Were manufactured. In the table, a susceptor number with a (*) mark attached to its shoulder indicates a susceptor without a wafer mounted, and a (→) mark in the table indicates that the susceptor moves in the X direction in each chamber. Further, the symbol M ₀ represents a gas supply mode in which only the carrier gas (H ₂ ) is supplied without supplying the source gas and the doping gas. In addition, the step No. in the table. The heating was stopped at 214.

[0044]

[Table 2]

[0045]

[Table 3]

[0046]

[Table 4]

[0047]

[Table 5]

Based on the sequence shown in the table, in the apparatus shown in FIG. 1, the time required to manufacture 100 epitaxial wafers after the susceptor 2 is sequentially sent out from the wafer apparatus chamber A in the X direction is T ( min) is T = (5 + 1) × {100+ (8-1)} + 8 × 5 + 1
= 683. That is, 11 hours and 23 minutes.

This required time is three times or less the time required to manufacture an epitaxial wafer having the same structure in the conventional batch type barrel type reactor, which shows the high production capacity of the device of the present invention. Per 20 sheets of the resulting wafer, of leak current I _L of the undoped AlGaAs epitaxial layer, the ratio of standard value I _O (I _L /
I _O ) was determined.

The uppermost layer of Si-doped GaAs epitaxy
The carrier concentration n and the thickness t of the axial growth layer were measured, and
Each standard value n₀(1 x 10¹⁷cm^-3) And t₀(40n
ratio to m), n / n₀(%), T / t₀(%)
I have The obtained results are used as a reference for the measurement wafer
I, in contrast with the number of _L/ I_OFigure for values
8, n / n₀For the values, see Figure 9, t / t₀For the value
Each is shown in FIG.

As is apparent from FIG. 8, the leak current I _L of the obtained wafer is within the standard value I _O , and the carrier concentration n and the thickness t are 1 × 10 ¹⁷ cm ⁻³ ± 7, respectively.
%, 40 nm ± 7%. Example 4 An HEMT epitaxial wafer having the structure shown in FIG. 16 was manufactured using the susceptor of Example 2. The epitaxial wafer to be manufactured is an undoped GaAs epitaxial growth layer 15a with a thickness of 500 mm and an undoped AlGa with a thickness of 1000 nm on a wafer 15 made of GaAs.
As epitaxial growth layer 15b, undoped GaAs epitaxial growth layer 15c with a thickness of 50 nm, thickness 2n
m undoped GaAs epitaxial growth layer 15d,
The Si-doped AlGaAs epitaxial growth layer 15e, which has a thickness of 16 nm and a carrier concentration n of 2 × 10 ¹⁸ cm ^−3, has a thickness of 50 nm and a carrier concentration n of 3 × 10 ¹⁸
The Si-doped GaAs epitaxial growth layer 15f aiming at cm ^-3 is laminated in this order.

The total amount of gas supplied to the preheating chambers B ₁ and B ₂ is ₂₀ l / min, and the total amount of gas supply to the vapor phase growth chambers C ₁ , C ₂ and C ₃ is 10 l / min. The total amount of gas supplied to C ₄ was 20 l / min. The reaction time for advancing the vapor phase growth reaction and the moving time of the susceptor are both set to be the same as those in the second embodiment, and the gas supply modes are also the preheating chambers B ₁ and B ₂ and the vapor phase growth chambers C ₁ to C. _{3. For} the cooling chambers D ₁ and D ₂ , the same modes as in the case of Example 2 were applied and the sequences shown in Tables 2 to 5 were adopted.

In this embodiment, the vapor phase growth chamber C ₄
The sequence shown in FIGS. 11 to 14 was adopted by changing only the feeding mode to the sequence of the second embodiment. That is, AsH ₃ is continuously supplied to the vapor phase growth chamber C ₄ as the source gas of the group V element as shown in FIG. 11 during the reaction time of 5 minutes, and TMGa is supplied in the supply mode as shown in FIG.
l in the supply mode as shown in FIG. 13, and Si ₂ H ₆ as shown in FIG.
It was supplied in a supply mode such as.

By this sequence, the vapor phase growth chamber C ₁ ,
The undoped GaAs epitaxial growth layer 15a and the undoped AlGaAs epitaxial growth layer 15b are formed up to C ₂ and C ₃ , and the undoped GaAs epitaxial growth layer 15c and the undoped Al are grown in the vapor phase growth chamber C _4.
GaAs epitaxial growth layer 15d, Si-doped Al
GaAs epitaxial growth layer e, Si-doped GaAs
The epitaxial growth layer 15f is sequentially formed within 5 minutes.

In this embodiment, since the supply / cutoff operations of various source gases and the doping gas to the vapor phase growth chamber C ₄ are performed many times, the carrier gas is also supplied to smoothly perform the supply / cutoff operation. The total amount of the supplied gas including the gas is increased to 20 l / min as described above. Example 5 Next, in the FET epitaxial wafer having the layer structure shown in FIG. 15, the layer structure is different as follows, that is, Group I: undoped GaAs epitaxial growth layer 14a.
Thickness of 500 nm, undoped AlGaAs epitaxial growth layer 14b thickness of 100 nm, Si-doped GaA
s epitaxial growth layer 14c has a thickness of 400 nm and carrier concentration n is 1 × 10 ¹⁷ cm ⁻³ ; Group II: undoped GaAs epitaxial growth layer 14a
Thickness of 200 nm, undoped AlGaAs epitaxial growth layer 14b thickness of 1500 nm, Si-doped Ga
With a thickness of the As epitaxial growth layer 14c of 300 nm,
The carrier concentration n is 2 × 10 ¹⁷ cm ⁻³ ; a case will be described in which 50 pieces each, 100 pieces in total, are continuously manufactured by the apparatus shown in FIG.

The susceptor is the same as in the case of the second embodiment.
16 pieces are prepared. First, up to step 104, 44 group I epitaxial wafers are continuously manufactured based on the sequence shown in Table 2 to Table 5 of the second embodiment. Then, a conversion operation from group I to group II production is started. In that case, the mode of gas supply to each chamber is changed as shown in Table 6 with the total amount of gas supply to each chamber being the same as in the second embodiment.

[0057]

[Table 6]

The supply modes shown in Table 6 and the supply modes shown in Table 1 are combined, and thereafter, the operations from step 105 onward are performed in the sequences shown in Tables 7 to 10.

[0059]

[Table 7]

[0060]

[Table 8]

[0061]

[Table 9]

[0062]

[Table 10]

As a result, in the process up to step 114, I
Fifty epitaxial wafers of the group II are manufactured, and 50 epitaxial wafers of the group II are manufactured in the process of the subsequent steps.

[0064]

As is apparent from the above description, claim 1
In the above apparatus, a plurality of vertical through holes are formed in one plate extending from the wafer mounting chamber to the wafer desorption chamber, and between the vertical through holes and the recesses of the susceptor and the gas flow path. Since the closed space is formed by, the closed space is sequentially formed in the longitudinal direction of the plate body by sequentially moving the susceptor. Therefore, these closed spaces are sequentially heated from the upstream side to the preheating chamber,
By functioning as a vapor phase growth chamber and a cooling chamber, the III-V compound semiconductor can be epitaxially grown by sequentially feeding the susceptor to the downstream side. It can be manufactured with high efficiency.

Even when the susceptor straddles two upper and lower through holes in the process of moving from the position of the upper and lower through holes to the next upper and lower through holes, the gas flow path has a V Supplying only the source gas and carrier gas of the group element V
Since the partial pressure of the group element is applied, the group V element is not desorbed from the already-formed epitaxial growth layer.

In the apparatus of claim 2, since the gas flow is formed in parallel with the wafer surface by disposing the straightening plate, no turbulence is generated in the gas flow and the interface sharpness is excellent. It becomes possible to manufacture an epitaxial wafer. In the apparatus according to the third aspect, since the inner block on which the wafer is mounted can rotate in plane, the uniformity of the growth layer becomes high.

Further, in the apparatus of claim 4, since the susceptor is arranged on the upper surface of the plate body, it is easy to dispose the susceptor on the plate body, and the workability at the time of operating the apparatus is good.

[Brief description of drawings]

FIG. 1 is a plan view showing a basic configuration of a device of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is a sectional view taken along line III-III in FIG.

FIG. 4 is a cross-sectional view showing a state where the susceptor is moving.

5 is a cross-sectional view of a susceptor having another structure as seen from the Y direction in FIG.

6 is a cross-sectional view of the susceptor shown in FIG. 5 when viewed from the X direction in FIG.

FIG. 7 is a graph showing the temperature distribution of each chamber during operation of the device of the present invention.

FIG. 8: I _L / of a wafer manufactured by operating the apparatus of the present invention
It is a graph which shows _IO value.

FIG. 9: n / n of a wafer manufactured by operating the device of the present invention
It is a graph which shows a ₀ (%) value.

FIG. 10: t / of a wafer manufactured by operating the device of the present invention
t is a graph showing the ₀ (%) value.

FIG. 11 is a graph showing a supply mode of AsH ₃ to the vapor phase growth chamber C ₄ during the operation of the apparatus of Example 5.

FIG. 12 is a graph showing a supply mode of TMGa to the vapor phase growth chamber C ₄ during the operation of the apparatus of Example 5.

FIG. 13 is a graph showing a supply mode of TMAl to the vapor phase growth chamber C ₄ during the operation of the apparatus of Example 5.

FIG. 14 is a graph showing a supply mode of Si ₂ H ₆ to the vapor phase growth chamber C ₄ during the operation of the apparatus of Example 5.

FIG. 15 is a cross-sectional view showing a layer structure of an FET epitaxial wafer.

FIG. 16 is a cross-sectional view showing a layer structure of an HEMT epitaxial wafer.

[Explanation of symbols]

A Wafer mounting chamber B, B ₁ , B ₂ Preheating chamber C, C ₁ , C ₂ , C ₃ , C ₄ Vapor growth chamber D, D ₁ , D ₂ Cooling chamber E Wafer desorption chamber 1 Plate 1 a Plate 1 1b Lower surface of plate 1 2 Susceptor 2a Side surface of susceptor 3 Vertical through hole of plate 1 4 Recess 4a of susceptor 2 4a Bottom of recess 4b Opening of recess 4 5 Wafer 6 Stopper 7 Cover 8 Gas channel 8a Gas Supply port 8b Gas discharge port 9 Source gas of Group V element and carrier gas 10 Outer block 10a Outer hole of outer block 10 10b Collar portion 10c of outer block 10 Lower end surface of collar portion 10b 10d Lower end surface of outer block 10 11 Bearing 11a Outer ring of bearing 11 11b Bearing ball 11c Inner ring of bearing 11d Through hole 12 Inner block 12a Through hole of inner block 12 12b Inner block 12 collar 12c Lower end surface of collar 12b 13 Drop block 14 GaAs wafer 14a Undoped GaAs epitaxial growth layer

Claims (5)

[Claims] 1. A wafer mounting chamber, a preheating chamber, a plurality of vapor phase growth chambers, a cooling chamber, and a wafer desorption chamber are arranged in series in this order, and the susceptor on which the wafer is mounted is sequentially sent out from the wafer mounting chamber. By moving the susceptor to the wafer loading / unloading chamber, the target III
In a metal-organic vapor phase epitaxy apparatus for forming an epitaxial growth layer of a group V compound semiconductor, the preheating chamber, the vapor phase growth chamber and the cooling chamber are common to the chambers extending from the wafer mounting chamber to the wafer desorption chamber. A single plate body, a susceptor arranged on one surface of the plate body along the longitudinal direction of the plate body, and arranged on the other surface of the plate body at right angles to the longitudinal direction of the plate body. A recess for mounting a wafer is formed on the surface of the susceptor facing the plate, and the plate has a plurality of recesses at predetermined intervals in the longitudinal direction. A vertical through hole is formed, and the vertical through hole has a shape larger than the wafer mounted in the recess of the susceptor and smaller than the outer shape of the susceptor, and the gas passage has a gas supply port and a gas exhaust port. The outlet is connected and the gas The flow channel has a channel width that can include the upper and lower through holes when viewed in a plan view, and the susceptor has the side surface of the plate body in close contact with each other and in close contact with the plate body. An organometallic vapor phase epitaxy apparatus which is capable of sequentially moving in the longitudinal direction. 2. The metal-organic vapor phase epitaxy apparatus according to claim 1, wherein a rectifying plate is provided in the gas flow passage, and the gas flow in the gas flow passage is substantially parallel to the surface of the wafer. 3. The susceptor comprises an outer block and an inner block rotatably fitted to the outer block, a wafer is mounted on the inner block, and the surface of the wafer is higher than the surface of the outer block. The metal-organic vapor phase epitaxy apparatus according to claim 1, wherein the apparatus is also depressed. 4. The susceptor is arranged on the upper surface of the plate body with its concave portion facing down.
Metal-organic vapor phase epitaxy system. 5. When the apparatus of claim 1 is operated to form an epitaxial growth layer of a III-V group compound semiconductor on a wafer mounted in the recess of the susceptor, the susceptor is positioned at the positions of the vertical through holes of the plate body. To form a closed space between the susceptor, the upper and lower through holes, and the gas flow path arranged on the other surface of the plate, and supply the source gas, the doping gas, and the carrier gas to the space. After the completion of the gas phase reaction, the source gas of the Group III element and the doping gas are supplied to the gas passage while the susceptor is moved to the position of the next upper and lower through holes of the plate after the completion of the gas phase reaction. And a metal-organic vapor phase epitaxy method characterized in that only the source gas of the group V element and the carrier gas are supplied.