JPH08213647A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH08213647A JPH08213647A JP7318771A JP31877195A JPH08213647A JP H08213647 A JPH08213647 A JP H08213647A JP 7318771 A JP7318771 A JP 7318771A JP 31877195 A JP31877195 A JP 31877195A JP H08213647 A JPH08213647 A JP H08213647A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- region
- semiconductor device
- surface protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 title claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000009751 slip forming Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 62
- 230000000694 effects Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 241000238558 Eucarida Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光半導体装置に関
するもので、特に光検出波長感度を安定に保ち、高感
度、高信頼性を有する受光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device, and more particularly to a light receiving device which maintains stable photodetection wavelength sensitivity and has high sensitivity and high reliability.
【０００２】[0002]
【従来の技術】従来の受光装置は、図２に示すように、
受光領域２上に反射防止膜１としてのシリコンナイトラ
イド膜が形成され、その上に表面保護膜３としてＣＶＤ
法によるシリコン酸化膜（ＳｉＯ2膜）やシリコンナイ
トライド膜が設けられている。2. Description of the Related Art A conventional light receiving device, as shown in FIG.
A silicon nitride film as an antireflection film 1 is formed on the light receiving region 2, and a CVD film as a surface protection film 3 is formed thereon.
A silicon oxide film (SiO 2 film) or a silicon nitride film is provided by the method.
【０００３】[0003]
【発明が解決しようとする課題】受光領域２上に反射防
止膜１を有する受光装置において、受光領域２上に表面
保護膜３と反射防止膜１とを多重に形成すると、干渉が
生じ光検出波長感度が不安定になる。このため、半導体
レーザ等の単色光に近い光の検出等には、光感度の低下
やばらつきが生じると言う課題があった。In the light receiving device having the antireflection film 1 on the light receiving region 2, when the surface protection film 3 and the antireflection film 1 are formed in multiple layers on the light receiving region 2, interference occurs and light detection is performed. Wavelength sensitivity becomes unstable. Therefore, there has been a problem in that the detection of light close to monochromatic light from a semiconductor laser or the like causes a decrease or variation in photosensitivity.
【０００４】本発明は、受光面での反射防止効果を最適
にした構成で、かつ受光領域周辺の接合表面での表面保
護を得ることを目的としているものである。It is an object of the present invention to have a structure in which the antireflection effect on the light receiving surface is optimized and to obtain surface protection on the bonding surface around the light receiving area.
【０００５】[0005]
【課題を解決するための手段】この課題を解決するため
に本発明の光半導体装置は、一導電型の半導体基板の表
面領域に形成された逆導電型の第１の不純物領域と、前
記半導体基板と前記第１の不純物領域との表面接合部上
に形成された絶縁膜と、前記第１の不純物領域上に形成
された反射防止膜と、前記反射防止膜上の所定部分に開
口部を有する透光性の表面保護膜とを設けたものであ
る。In order to solve this problem, an optical semiconductor device of the present invention comprises a first impurity region of opposite conductivity type formed in the surface region of a semiconductor substrate of one conductivity type, and the semiconductor described above. An insulating film formed on a surface junction between the substrate and the first impurity region, an antireflection film formed on the first impurity region, and an opening at a predetermined portion on the antireflection film. And a light-transmitting surface protective film.
【０００６】これにより、受光領域上に表面保護膜がな
くなり、反射防止膜のみとなるので、反射防止膜と表面
保護膜とによる干渉が低減するとともに、受光領域周辺
のＰＮ接合部の表面保護も得られる。As a result, the surface protective film is removed from the light receiving region and only the antireflection film is formed. Therefore, the interference between the antireflection film and the surface protective film is reduced, and the surface of the PN junction around the light receiving region is also protected. can get.
【０００７】[0007]
【発明の実施の形態】本発明の請求項１に記載の発明
は、一導電型の半導体基板の表面領域に形成された逆導
電型の第１の不純物領域と、前記半導体基板と前記第１
の不純物領域との表面接合部上に形成された絶縁膜と、
前記第１の不純物領域上に形成された反射防止膜と、前
記反射防止膜上の所定部分に開口部を有する透光性の表
面保護膜とを設けたことにより、受光面では反射防止膜
のみになるため、干渉が生じず光検出波長感度が安定す
るとともに、ＰＮ接合からなる光電変換部の周辺部に透
光性の表面保護膜が形成されているのでＰＮ接合部が保
護されるという作用を有する。BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention comprises a first impurity region of opposite conductivity type formed in a surface region of a semiconductor substrate of one conductivity type, the semiconductor substrate and the first impurity region.
An insulating film formed on the surface junction with the impurity region of
Since the antireflection film formed on the first impurity region and the translucent surface protective film having an opening at a predetermined portion on the antireflection film are provided, only the antireflection film is formed on the light receiving surface. Therefore, interference does not occur and the light detection wavelength sensitivity is stable, and the PN junction is protected because the light-transmitting surface protective film is formed in the peripheral portion of the photoelectric conversion section including the PN junction. Have.
【０００８】本発明の請求項２に記載の発明は、請求項
１に記載の表面保護膜としてシリコン窒化膜を用いたも
のであり、シリコン窒化膜は膜が酸化シリコン膜より緻
密であるため酸化シリコン膜よりさらに不純物による表
面汚染を防ぎ、リーク電流の劣化を防止する作用を有す
る。According to a second aspect of the present invention, a silicon nitride film is used as the surface protective film according to the first aspect. Since the silicon nitride film is denser than the silicon oxide film, it is oxidized. It has a function of preventing surface contamination by impurities more than the silicon film and preventing deterioration of leak current.
【０００９】本発明の請求項３に記載の発明は、請求項
１に記載の表面保護膜を少なくとも２層以上とし、下層
にシリコン酸化膜を設けたものであり、２層以上にする
ことにより表面保護膜をより強くするとともに、下層に
シリコン酸化膜を着けた場合上層にシリコン窒化膜を形
成するときシリコン窒化膜をはがれにくくする作用を有
する。According to a third aspect of the present invention, the surface protective film according to the first aspect has at least two layers and a silicon oxide film is provided as a lower layer. It has the effect of making the surface protective film stronger and making it more difficult to peel off the silicon nitride film when the silicon oxide film is formed on the lower layer when the silicon nitride film is formed on the upper layer.
【００１０】本発明の請求項４に記載の発明は、請求項
１に記載の表面保護膜が樹脂であるものであり、これに
より表面保護膜の形成が容易となる。According to a fourth aspect of the present invention, the surface protective film according to the first aspect is a resin, which facilitates the formation of the surface protective film.
【００１１】本発明の請求項５に記載の発明は、請求項
１に記載の反射防止膜が第１の不純物領域から絶縁膜上
に連続して形成されているものであり、これによりＰＮ
接合部上の膜が増加し、さらにＰＮ接合部での表面保護
が増加する作用を有する。According to a fifth aspect of the present invention, the antireflection film according to the first aspect is continuously formed on the insulating film from the first impurity region.
It has the effect of increasing the film on the junction and further increasing the surface protection at the PN junction.
【００１２】図１に本発明の光半導体装置としての実施
例の受光装置の断面図を示し、これを参照して説明す
る。FIG. 1 shows a sectional view of a light receiving device of an embodiment as an optical semiconductor device of the present invention, which will be described with reference to this.
【００１３】Ｎ+型シリコン基板８上に高抵抗なＮ型エ
ピタキシャルによる高抵抗層９が形成され、この中にＰ
+型の不純物領域をもつ受光領域２が形成され、Ｎ+型の
不純物領域７がフォトダイオードの受光領域２の周辺部
に分離されて形成されている。受光領域２の上にはシリ
コンナイトライドによる反射防止膜１が、入射する光の
波長に対し最適な効果を現出させる膜厚で形成されてい
る。また、受光領域２のＰＮ接合部が表面に露出する領
域から高抵抗層９が表面に露出する領域及びＮ +型の不
純物領域７に渡って、絶縁膜である熱酸化膜１０が形成
されている。さらに、受光部のＰＮ接合部が表面に露出
する領域から高抵抗層９が表面に露出する領域及びＮ+
型の不純物領域７に渡って、前記熱酸化膜１０上及びそ
の周囲をカバーするようにＣＶＤ法によるＳｉＯ2膜５
とその上にシリコンナイトライド膜６による表面保護膜
が形成されている。よって、受光領域２の反射防止膜１
上の表面保護膜に所定の開口部を設けた構成となる。N+Type N substrate with high resistance on silicon substrate 8
A high resistance layer 9 is formed by means of the epitaxial layer, in which P
+A light receiving region 2 having an impurity region of+Type of
The impurity region 7 is the peripheral portion of the light receiving region 2 of the photodiode.
Are formed separately. Siri on the light receiving area 2
The anti-reflection film 1 formed by connitride is
Formed with a thickness that produces the optimum effect for the wavelength
It In addition, the area where the PN junction of the light receiving region 2 is exposed on the surface.
Region where the high resistance layer 9 is exposed on the surface and N +Type
A thermal oxide film 10 which is an insulating film is formed over the pure substance region 7.
Has been done. Furthermore, the PN junction of the light receiving part is exposed on the surface.
Area where the high resistance layer 9 is exposed on the surface and N+
Over the impurity region 7 of the mold and on the thermal oxide film 10 and
SiO by CVD method so as to cover the periphery of2Membrane 5
And a surface protection film formed thereon by the silicon nitride film 6
Are formed. Therefore, the antireflection film 1 in the light receiving region 2
A predetermined opening is provided in the upper surface protective film.
【００１４】このように主たる受光領域２の上には表面
保護のための、シリコンナイトライド膜６は形成されて
おらず、反射防止膜１の効果を最大に作用させ、シリコ
ンナイトライド膜６により、受光部の接合部が表面に露
出する領域で不純物による表面汚染を防ぎ、リーク電流
の劣化を防止する作用をあわせもたせたフォトダイオー
ドを得ることができる。特に、熱酸化膜１０が受光領域
の周辺部で段差を有し、その段差部に反射防止膜１が形
成される場合では、反射防止膜の膜厚、内部応力、堆積
時のステップカバレージ等により、段差部で反射防止膜
１の割れや剥離が生じ易いので、さらに本発明の透光性
の表面保護膜を形成することは有効である。As described above, the silicon nitride film 6 for protecting the surface is not formed on the main light-receiving region 2, and the effect of the antireflection film 1 is maximized. Thus, it is possible to obtain a photodiode that also has a function of preventing surface contamination by impurities in the region where the junction of the light receiving portion is exposed on the surface and preventing deterioration of leak current. In particular, when the thermal oxide film 10 has a step in the peripheral portion of the light receiving region and the antireflection film 1 is formed on the step, the film thickness of the antireflection film, internal stress, step coverage during deposition, etc. Since the antireflection film 1 is likely to be cracked or peeled off at the step portion, it is effective to further form the translucent surface protective film of the present invention.
【００１５】なお、上記において説明した表面保護のた
めのシリコンナイトライド膜６は感光性のポリイミド系
の樹脂等に置き換えても同等の効果を得ることはいうま
でもない。Needless to say, the same effect can be obtained even if the silicon nitride film 6 for surface protection described above is replaced with a photosensitive polyimide resin or the like.
【００１６】[0016]
【発明の効果】以上のように本発明は、受光領域の光電
変換部の周辺に透光性の表面保護用の薄膜を形成するこ
とで、半導体基板表面のＰＮ接合表面の保護を行うこと
ができるとともに、受光領域への光学的影響を及ぼすこ
となく、高感度で、高信頼性を有した、光半導体装置を
容易に得ることができる。特に、半導体レーザ等を光源
に用いる場合の光電変換素子として、高信頼性を保った
まま、受光感度にばらつきの非常に少ないものを実現で
きる。As described above, according to the present invention, the PN junction surface of the semiconductor substrate surface can be protected by forming the translucent thin film for surface protection around the photoelectric conversion portion in the light receiving region. In addition, an optical semiconductor device having high sensitivity and high reliability can be easily obtained without optically affecting the light receiving region. In particular, as a photoelectric conversion element when a semiconductor laser or the like is used as a light source, it is possible to realize a photoelectric conversion element having a very small variation in light receiving sensitivity while maintaining high reliability.
【図１】本発明の実施例の光半導体装置の断面構造図FIG. 1 is a sectional structural view of an optical semiconductor device according to an embodiment of the present invention.
【図２】従来例の光半導体装置の断面構造図FIG. 2 is a cross-sectional structure diagram of a conventional optical semiconductor device.
１ 反射防止膜 ２ 受光領域 ３ 表面保護膜 ４ 表面電極 ５ ＳｉＯ2膜 ６ シリコンナイトライド膜 ７ Ｎ+型の不純物領域 ８ Ｎ+型シリコン基板 ９ 高抵抗層 １０ 熱酸化膜1 Antireflection Film 2 Light-Receiving Area 3 Surface Protective Film 4 Surface Electrode 5 SiO 2 Film 6 Silicon Nitride Film 7 N + Type Impurity Region 8 N + Type Silicon Substrate 9 High Resistance Layer 10 Thermal Oxide Film
Claims (5)
された逆導電型の第１の不純物領域と、前記半導体基板
と前記第１の不純物領域との表面接合部上に形成された
絶縁膜と、前記第１の不純物領域上に形成された反射防
止膜と、前記反射防止膜上の所定部分に開口部を有する
透光性の表面保護膜とを設けた光半導体装置。1. A first impurity region of opposite conductivity type formed in a surface region of a semiconductor substrate of one conductivity type, and an insulation formed on a surface junction between the semiconductor substrate and the first impurity region. An optical semiconductor device comprising a film, an antireflection film formed on the first impurity region, and a translucent surface protective film having an opening at a predetermined portion on the antireflection film.
項１記載の光半導体装置。2. The optical semiconductor device according to claim 1, wherein the surface protective film is a silicon nitride film.
層にシリコン酸化膜を設けた請求項１記載の光半導体装
置。3. The optical semiconductor device according to claim 1, wherein the surface protective film is at least two layers, and a silicon oxide film is provided as a lower layer.
光半導体装置。4. The optical semiconductor device according to claim 1, wherein the surface protective film is a resin.
膜上に連続して形成されている請求項１記載の光半導体
装置。5. The optical semiconductor device according to claim 1, wherein the antireflection film is continuously formed on the insulating film from the first impurity region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7318771A JPH08213647A (en) | 1995-12-07 | 1995-12-07 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7318771A JPH08213647A (en) | 1995-12-07 | 1995-12-07 | Optical semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61230402A Division JP2661901B2 (en) | 1986-09-29 | 1986-09-29 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08213647A true JPH08213647A (en) | 1996-08-20 |
Family
ID=18102770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7318771A Pending JPH08213647A (en) | 1995-12-07 | 1995-12-07 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08213647A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004296836A (en) * | 2003-03-27 | 2004-10-21 | Hamamatsu Photonics Kk | Photodiode array, method of manufacturing the same, and radiation detector |
| WO2010087320A1 (en) * | 2009-01-27 | 2010-08-05 | 株式会社 アルバック | Solar cell and method for manufacturing solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154784A (en) * | 1979-05-22 | 1980-12-02 | Nec Corp | Photoreceptor |
| JPS57155785A (en) * | 1981-03-23 | 1982-09-25 | Toshiba Corp | Semiconductor photo-receiving element photodetector |
-
1995
- 1995-12-07 JP JP7318771A patent/JPH08213647A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154784A (en) * | 1979-05-22 | 1980-12-02 | Nec Corp | Photoreceptor |
| JPS57155785A (en) * | 1981-03-23 | 1982-09-25 | Toshiba Corp | Semiconductor photo-receiving element photodetector |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004296836A (en) * | 2003-03-27 | 2004-10-21 | Hamamatsu Photonics Kk | Photodiode array, method of manufacturing the same, and radiation detector |
| US7663169B2 (en) | 2003-03-27 | 2010-02-16 | Hamamatsu Photonics K.K. | Photodiode array and production method thereof, and radiation detector |
| WO2010087320A1 (en) * | 2009-01-27 | 2010-08-05 | 株式会社 アルバック | Solar cell and method for manufacturing solar cell |
| CN102292822A (en) * | 2009-01-27 | 2011-12-21 | 株式会社爱发科 | Solar cell and method for manufacturing solar cell |
| JPWO2010087320A1 (en) * | 2009-01-27 | 2012-08-02 | 株式会社アルバック | Solar cell and method for manufacturing solar cell |
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