JPH08228019A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH08228019A JPH08228019A JP7318772A JP31877295A JPH08228019A JP H08228019 A JPH08228019 A JP H08228019A JP 7318772 A JP7318772 A JP 7318772A JP 31877295 A JP31877295 A JP 31877295A JP H08228019 A JPH08228019 A JP H08228019A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- impurity region
- semiconductor device
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 230000003287 optical effect Effects 0.000 title claims description 11
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 55
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000238558 Eucarida Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光半導体装置に関
するもので、特に光検出波長感度を安定に保ち、高感
度、高信頼性を有する受光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device, and more particularly to a light receiving device which maintains stable photodetection wavelength sensitivity and has high sensitivity and high reliability.
【０００２】[0002]
【従来の技術】従来の受光装置は、図２に示すように、
受光領域２上に反射防止膜１としてのシリコンナイトラ
イド膜が形成され、その上に表面保護膜３としてＣＶＤ
法によるシリコン酸化膜（ＳｉＯ2膜）やシリコンナイ
トライド膜が設けられている。2. Description of the Related Art A conventional light receiving device, as shown in FIG.
A silicon nitride film as an antireflection film 1 is formed on the light receiving region 2, and a CVD film as a surface protection film 3 is formed thereon.
A silicon oxide film (SiO 2 film) or a silicon nitride film is provided by the method.
【０００３】[0003]
【発明が解決しようとする課題】受光領域２上に反射防
止膜１を有する受光装置において、受光領域２上に表面
保護膜３と反射防止膜１とを多重に形成すると、干渉が
生じ光検出波長感度が不安定になる。このため、半導体
レーザ等の単色光に近い光の検出等には、光感度の低下
やばらつきが生じると言う課題があった。In the light receiving device having the antireflection film 1 on the light receiving region 2, when the surface protection film 3 and the antireflection film 1 are formed in multiple layers on the light receiving region 2, interference occurs and light detection is performed. Wavelength sensitivity becomes unstable. Therefore, there has been a problem in that the detection of light close to monochromatic light from a semiconductor laser or the like causes a decrease or variation in photosensitivity.
【０００４】[0004]
【課題を解決するための手段】この課題を解決するため
に本発明の光半導体装置は、一導電型の半導体基板の表
面領域に形成された逆導電型の第１の不純物領域と、前
記半導体基板と前記第１の不純物領域との表面接合部上
に形成された絶縁膜と、前記第１の不純物領域上及び前
記絶縁膜上とに連続して設けられた反射防止膜と、前記
反射防止膜上に形成され、前記第１の不純物領域上に空
き領域を有する透光性の表面保護膜とが設けられた構成
を有している。In order to solve this problem, an optical semiconductor device of the present invention comprises a first impurity region of opposite conductivity type formed in the surface region of a semiconductor substrate of one conductivity type, and the semiconductor described above. An insulating film formed on a surface junction between a substrate and the first impurity region, an antireflection film continuously provided on the first impurity region and the insulating film, and the antireflection film A transparent surface protective film formed on the film and having a vacant region is provided on the first impurity region.
【０００５】これにより、受光領域上に表面保護膜が無
くなり、反射防止膜のみとなるので反射防止膜と表面保
護膜とによる干渉が低減するとともに、受光領域周辺の
ＰＮ接合部の表面保護も得られる。特に反射防止膜が絶
縁膜上にまで連続した構成であるので、絶縁膜に段差が
ある場合に有効である。As a result, the surface protective film is removed from the light receiving region and only the antireflection film is formed, so that the interference between the antireflection film and the surface protective film is reduced and the surface of the PN junction portion around the light receiving region is also protected. To be In particular, since the antireflection film is continuous to the insulating film, it is effective when the insulating film has a step.
【０００６】[0006]
【発明の実施の形態】本発明の請求項１に記載の発明
は、一導電型の半導体基板の表面領域に形成された逆導
電型の第１の不純物領域と、前記半導体基板と前記第１
の不純物領域との表面接合部上に形成された絶縁膜と、
前記第１の不純物領域上及び前記絶縁膜上とに連続して
設けられた反射防止膜と、前記反射防止膜上に形成さ
れ、前記第１の不純物領域上に空き領域を有する透光性
の表面保護膜とが設けられたことにより、受光面では反
射防止膜のみになるため、干渉が生じず光検出波長が安
定するとともに、ＰＮ接合からなる光電変換部の周辺部
に透光性の表面保護膜が形成されているので、ＰＮ接合
部の表面が保護されるという作用を有する。BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention comprises a first impurity region of opposite conductivity type formed in a surface region of a semiconductor substrate of one conductivity type, the semiconductor substrate and the first impurity region.
An insulating film formed on the surface junction with the impurity region of
An antireflection film that is continuously provided on the first impurity region and the insulating film, and a light-transmitting film that is formed on the antireflection film and has a vacant region on the first impurity region. Since the surface protective film is provided, only the antireflection film is formed on the light-receiving surface, so that interference does not occur and the light detection wavelength is stable, and a light-transmitting surface is provided around the photoelectric conversion unit including the PN junction. Since the protective film is formed, it has the function of protecting the surface of the PN junction.
【０００７】本発明の請求項２に記載の発明は、請求項
１の構成に加えて半導体基板と同一導電型の第２の不純
物領域が第１の不純物領域の周辺に前記半導体基板の表
面領域を挟んで設けられ、絶縁膜が前記第１の不純物領
域の端部と前記第２の不純物領域の端部に渡って設けら
れたものであり、第２の不純物領域を形成することによ
って受光装置の耐圧を高める作用を有する。According to a second aspect of the present invention, in addition to the structure of the first aspect, a second impurity region of the same conductivity type as that of the semiconductor substrate is provided in the surface region of the semiconductor substrate around the first impurity region. And an insulating film is provided so as to extend over the end of the first impurity region and the end of the second impurity region. The light receiving device is formed by forming the second impurity region. Has the effect of increasing the withstand voltage of.
【０００８】本発明の請求項３に記載の発明は、請求項
１または２の構成の反射防止膜が絶縁膜上で終端してい
るものであり、これにより反射防止膜を有効に用いてい
る。According to a third aspect of the present invention, the antireflection film having the structure of the first or second aspect is terminated on the insulating film, whereby the antireflection film is effectively used. .
【０００９】図１に本発明の光半導体装置としての実施
例の受光装置の断面図を示し、これを参照して説明す
る。FIG. 1 shows a sectional view of a light receiving device of an embodiment as an optical semiconductor device of the present invention, and description will be given with reference to this.
【００１０】Ｎ+型シリコン基板８上に高抵抗なＮ型エ
ピタキシャルによる高抵抗層９が形成され、この中にＰ
+型の不純物領域をもつ受光領域２が形成され、Ｎ+型の
不純物領域７がフォトダイオードの受光領域２の周辺部
に分離されて形成されている。受光領域２の上にはシリ
コンナイトライドによる反射防止膜１が、入射する光の
波長に対し最適な効果を現出させる膜厚で形成されてい
る。また、受光領域２のＰＮ接合部が表面に露出する領
域から高抵抗層９が表面に露出する領域及びＮ +型の不
純物領域７に渡って、絶縁膜として熱酸化膜１０が形成
されている。さらに、受光部のＰＮ接合部が表面に露出
する領域から高抵抗層９が表面に露出する領域及びＮ+
型の不純物領域７に渡って、前記熱酸化膜１０上及びそ
の周囲をカバーするようにＣＶＤ法によるＳｉＯ2膜と
その上にシリコンナイトライド膜６による表面保護膜が
形成されている。N+Type N substrate with high resistance on silicon substrate 8
A high resistance layer 9 is formed by means of the epitaxial layer, in which P
+A light receiving region 2 having an impurity region of+Type of
The impurity region 7 is the peripheral portion of the light receiving region 2 of the photodiode.
Are formed separately. Siri on the light receiving area 2
The anti-reflection film 1 formed by connitride is
Formed with a thickness that produces the optimum effect for the wavelength
It In addition, the area where the PN junction of the light receiving region 2 is exposed on the surface.
Region where the high resistance layer 9 is exposed on the surface and N +Type
A thermal oxide film 10 is formed as an insulating film over the pure substance region 7.
Has been done. Furthermore, the PN junction of the light receiving part is exposed on the surface.
Area where the high resistance layer 9 is exposed on the surface and N+
Over the impurity region 7 of the mold and on the thermal oxide film 10 and
SiO by CVD method so as to cover the periphery of2With a membrane
On top of that, a surface protection film made of silicon nitride film 6 is formed.
Has been formed.
【００１１】このように主たる受光領域２の上には表面
保護のための、シリコンナイトライド膜６は形成されて
おらず、反射防止膜１の効果を最大に作用させ、シリコ
ンナイトライド膜６により、受光部の接合部が表面に露
出する領域で不純物による表面汚染を防ぎ、リーク電流
の劣化を防止する作用をあわせもたせたフォトダイオー
ドを得ることができる。特に、熱酸化膜１０が受光領域
の周辺部で段差を有し、その段差部に反射防止膜１が形
成される場合では、反射防止膜の膜厚、内部応力、堆積
時のステップカバレージ等により、段差部で反射防止膜
１の割れや剥離が生じ易いので、さらに本発明の透光性
の表面保護膜を形成することは有効である。As described above, the silicon nitride film 6 for protecting the surface is not formed on the main light receiving region 2, and the effect of the antireflection film 1 is maximized. Thus, it is possible to obtain a photodiode that also has a function of preventing surface contamination by impurities in the region where the junction of the light receiving portion is exposed on the surface and preventing deterioration of leak current. In particular, when the thermal oxide film 10 has a step in the peripheral portion of the light receiving region and the antireflection film 1 is formed on the step, the film thickness of the antireflection film, internal stress, step coverage during deposition, etc. Since the antireflection film 1 is likely to be cracked or peeled off at the step portion, it is effective to further form the translucent surface protective film of the present invention.
【００１２】なお、上記において説明した表面保護のた
めのシリコンナイトライド膜６は感光性のポリイミド系
の樹脂等に置き換えても同等の効果を得ることはいうま
でもない。Needless to say, the same effect can be obtained even if the silicon nitride film 6 for surface protection described above is replaced with a photosensitive polyimide resin or the like.
【００１３】[0013]
【発明の効果】以上のように本発明は、受光領域の光電
変換部の周辺に透光性の表面保護用の薄膜を形成するこ
とで、半導体基板表面のＰＮ接合表面の保護を行うこと
ができるとともに、受光領域への光学的影響を及ぼすこ
となく、高感度で、高信頼性を有した、光半導体装置を
容易に得ることができる。特に、半導体レーザ等を光源
に用いる場合の光電変換素子として、高信頼性を保った
まま、受光感度にばらつきの非常に少ないものを実現で
きる。As described above, according to the present invention, the PN junction surface of the semiconductor substrate surface can be protected by forming the translucent thin film for surface protection around the photoelectric conversion portion in the light receiving region. In addition, an optical semiconductor device having high sensitivity and high reliability can be easily obtained without optically affecting the light receiving region. In particular, as a photoelectric conversion element when a semiconductor laser or the like is used as a light source, it is possible to realize a photoelectric conversion element having a very small variation in light receiving sensitivity while maintaining high reliability.
【図１】本発明の実施例の光半導体装置の断面構造図FIG. 1 is a sectional structural view of an optical semiconductor device according to an embodiment of the present invention.
【図２】従来例の光半導体装置の断面構造図FIG. 2 is a cross-sectional structure diagram of a conventional optical semiconductor device.
１ 反射防止膜 ２ 受光領域 ３ 表面保護膜 ４ 表面電極 ５ ＳｉＯ2膜 ６ シリコンナイトライド膜 ７ Ｎ+型の不純物領域 ８ Ｎ+型シリコン基板 ９ 高抵抗層 １０ 熱酸化膜1 Antireflection Film 2 Light-Receiving Area 3 Surface Protective Film 4 Surface Electrode 5 SiO 2 Film 6 Silicon Nitride Film 7 N + Type Impurity Region 8 N + Type Silicon Substrate 9 High Resistance Layer 10 Thermal Oxide Film
Claims (3)
された逆導電型の第１の不純物領域と、前記半導体基板
と前記第１の不純物領域との表面接合部上に形成された
絶縁膜と、前記第１の不純物領域上及び前記絶縁膜上と
に連続して設けられた反射防止膜と、前記反射防止膜に
形成され、前記第１の不純物領域上に空き領域を有する
透光性の表面保護膜とが設けられた光半導体装置。1. A first impurity region of opposite conductivity type formed in a surface region of a semiconductor substrate of one conductivity type, and an insulation formed on a surface junction between the semiconductor substrate and the first impurity region. A film, an antireflection film continuously provided on the first impurity region and the insulating film, and a translucent film formed on the antireflection film and having an empty region on the first impurity region. An optical semiconductor device provided with a transparent surface protective film.
領域が前記第１の不純物領域の周辺に前記半導体基板の
表面領域を挟んで設けられ、絶縁膜が前記第１の不純物
領域の端部から前記第２の不純物領域の端部に渡って設
けられている請求項１記載の光半導体装置。2. A second impurity region having the same conductivity type as that of the semiconductor substrate is provided around the first impurity region with a surface region of the semiconductor substrate interposed therebetween, and an insulating film is provided at an end of the first impurity region. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is provided so as to extend from a portion to an end portion of the second impurity region.
して設けられている前記反射防止膜が前記絶縁膜上で終
端している請求項２または３記載の光半導体装置。3. The optical semiconductor device according to claim 2, wherein the antireflection film, which is continuously provided on the insulating film from the first impurity region, terminates on the insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7318772A JPH08228019A (en) | 1995-12-07 | 1995-12-07 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7318772A JPH08228019A (en) | 1995-12-07 | 1995-12-07 | Optical semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61230402A Division JP2661901B2 (en) | 1986-09-29 | 1986-09-29 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08228019A true JPH08228019A (en) | 1996-09-03 |
Family
ID=18102781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7318772A Pending JPH08228019A (en) | 1995-12-07 | 1995-12-07 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08228019A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791153B2 (en) | 2002-03-08 | 2004-09-14 | Kabushiki Kaisha Toshiba | Photo detector with passivation layer and antireflection layer made of the same material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154784A (en) * | 1979-05-22 | 1980-12-02 | Nec Corp | Photoreceptor |
| JPS57155785A (en) * | 1981-03-23 | 1982-09-25 | Toshiba Corp | Semiconductor photo-receiving element photodetector |
-
1995
- 1995-12-07 JP JP7318772A patent/JPH08228019A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154784A (en) * | 1979-05-22 | 1980-12-02 | Nec Corp | Photoreceptor |
| JPS57155785A (en) * | 1981-03-23 | 1982-09-25 | Toshiba Corp | Semiconductor photo-receiving element photodetector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791153B2 (en) | 2002-03-08 | 2004-09-14 | Kabushiki Kaisha Toshiba | Photo detector with passivation layer and antireflection layer made of the same material |
| US7042059B2 (en) | 2002-03-08 | 2006-05-09 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method for manufacturing optical semiconductor device |
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