JPH08220041A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH08220041A JPH08220041A JP4655795A JP4655795A JPH08220041A JP H08220041 A JPH08220041 A JP H08220041A JP 4655795 A JP4655795 A JP 4655795A JP 4655795 A JP4655795 A JP 4655795A JP H08220041 A JPH08220041 A JP H08220041A
- Authority
- JP
- Japan
- Prior art keywords
- film
- detection
- detection film
- substrate
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
(57)【要約】
【構成】 絶縁基板4にCO検出膜6とCH4検出膜8
を設け、基板4の裏面でCH4検出膜8の下面にヒータ
膜10を設ける。CO検出膜6側のリード線23,23
の熱伝導度を大きくする。
【効果】 検出のサイクルタイムを短縮し、CO検出膜
6とCH4検出膜8とに充分な温度差を与える。
(57) [Summary] [Structure] CO detection film 6 and CH4 detection film 8 on insulating substrate 4
The heater film 10 is provided on the lower surface of the CH4 detection film 8 on the back surface of the substrate 4. Lead wires 23, 23 on the CO detection film 6 side
Increase the thermal conductivity of. [Effect] The detection cycle time is shortened, and a sufficient temperature difference is provided between the CO detection film 6 and the CH4 detection film 8.
Description
【0001】[0001]
【発明の利用分野】この発明は、COとメタンやLPG
等の可燃性ガスを同時に検出するためのガスセンサに関
する。This invention relates to CO, methane and LPG.
The present invention relates to a gas sensor for simultaneously detecting a flammable gas such as
【0002】[0002]
【従来技術】出願人は、アルミナ等の耐熱絶縁基板の表
面にヒータ膜と1対の金属酸化物半導体膜とを設け、金
属酸化物半導体膜の一方で水蒸気を、他方で可燃性ガス
を検出するようにしたガスセンサを提案した(実開平4
−15057号公報)。この場合、水蒸気検出膜をガラ
ス膜で被覆して可燃性ガス感度を除き、さらにヒータ膜
を水蒸気検出膜側に配置して、可燃性ガス検出膜よりも
水蒸気検出膜を高温に加熱する。The applicant has provided a heater film and a pair of metal oxide semiconductor films on the surface of a heat-resistant insulating substrate such as alumina, and detects water vapor on one side of the metal oxide semiconductor film and flammable gas on the other side. We have proposed a gas sensor designed to
-15057). In this case, the water vapor detection film is covered with a glass film to remove the sensitivity of the combustible gas, and a heater film is disposed on the water vapor detection film side to heat the water vapor detection film to a higher temperature than the combustible gas detection film.
【0003】これとは別に発明者は、1つのガスセンサ
で、COと、CH4やLPG等の可燃性ガスとを同時に
検出することを検討した。この場合、ガスセンサの温度
を周期的に変化させ、例えば可燃性ガス検出膜の最高温
度を450℃程度に、CO検出膜の最高温度を300℃
程度にし、CO検出膜の最低温度を室温〜120℃程度
とする。そして可燃性ガスを可燃性ガス検出膜の最高温
度での出力等から検出し、COをCO検出膜の最低温度
等での出力から検出する。そしてこのようなガスセンサ
の実用化には、CO検出膜の最高温度から最低温度への
冷却を速め、検出のサイクルタイムを短縮することが必
要である。また可燃性ガス検出膜を例えば450℃の最
高温度に加熱した際に、CO検出膜の温度を例えば30
0℃程度にとどめるようにし、両者の間に充分な温度差
を設けることが必要である。そして前記のガスセンサを
そのままこの用途に転用すると、CO検出膜と可燃性ガ
ス検出膜との温度差が小さく、かつCO検出膜の冷却が
遅いため検出のサイクルタイムを短く出来ないことが判
明した。Separately from this, the inventor has studied the simultaneous detection of CO and combustible gases such as CH4 and LPG with one gas sensor. In this case, the temperature of the gas sensor is periodically changed, and the maximum temperature of the combustible gas detection film is set to about 450 ° C. and the maximum temperature of the CO detection film is set to 300 ° C., for example.
The minimum temperature of the CO detection film is about room temperature to about 120 ° C. Then, the combustible gas is detected from the output of the combustible gas detection film at the maximum temperature and the like, and the CO is detected from the output of the CO detection film at the minimum temperature and the like. In order to put such a gas sensor into practical use, it is necessary to speed up the cooling of the CO detection film from the maximum temperature to the minimum temperature to shorten the detection cycle time. Further, when the combustible gas detection film is heated to a maximum temperature of 450 ° C., the temperature of the CO detection film is set to, for example, 30
It is necessary to keep the temperature at about 0 ° C. and to provide a sufficient temperature difference between them. It was found that if the above gas sensor is used for this purpose as it is, the detection cycle time cannot be shortened because the temperature difference between the CO detection film and the combustible gas detection film is small and the cooling of the CO detection film is slow.
【0004】[0004]
【発明の課題】請求項1の発明の課題は、CO検出膜の
冷却を速め検出のサイクルタイムを短縮すると共に、可
燃性ガス検出膜とCO検出膜とに充分な温度差を設ける
ことにある。請求項2の発明での課題は、前記の温度差
をより大きくし、また検出のサイクルタイムをより短く
することにある。請求項3での課題は、ヒータ膜を基板
の裏面に、可燃性ガス検出膜やCO検出膜を基板の表面
に配置して、基板面積を小さくし、かつヒータ電極や共
通電極を基板の表裏両面に接続できるようにすることに
ある。請求項4での課題は、4つの電極とリード線との
接続を強化することにある。SUMMARY OF THE INVENTION An object of the present invention is to accelerate the cooling of the CO detection film to shorten the detection cycle time and to provide a sufficient temperature difference between the combustible gas detection film and the CO detection film. . An object of the present invention is to increase the temperature difference and shorten the detection cycle time. The object of claim 3 is to arrange the heater film on the back surface of the substrate and the combustible gas detection film or the CO detection film on the front surface of the substrate to reduce the substrate area, and to arrange the heater electrode and the common electrode on the front and back surfaces of the substrate. It is to be able to connect to both sides. The object of claim 4 is to strengthen the connection between the four electrodes and the lead wire.
【0005】[0005]
【発明の構成】請求項1のガスセンサでは、ほぼ長方形
状の耐熱絶縁基板の、第1半部にCO検出膜を、第2半
部に可燃性ガス検出膜とヒータ膜とを設け、各膜に接続
した共通電極と、CO検出膜に接続したCO検出電極
と、可燃性ガス検出膜に接続した可燃性ガス検出電極
と、ヒータ膜に接続したヒータ電極との4つの電極を設
け、前記第1半部で前記4つの電極中の2つの電極に高
熱伝導リード線を接続し、前記第2半部で他の2つの電
極に低熱伝導リード線を接続する。高熱伝導リード線に
は例えばPt等の熱伝導率の高い線材を用い、低熱伝導
リード線にはPt−W等の熱伝導率の低い線材や、Pt
を用いる場合でも高熱伝導リード線よりも線径が細い線
材を用いる。第1半部や第2半部との概念は、基板の長
手方向を左右にとった場合、例えば右側にCO検出膜
を、左側に可燃性ガス検出膜とヒータ膜とを設けるとの
意味で、可燃性ガス検出膜やヒータ膜が基板の中心線よ
りも右側に部分的にはみ出すことを除外する意味ではな
い。According to a first aspect of the present invention, in a gas sensor having a substantially rectangular heat-resistant insulating substrate, a CO detection film is provided in a first half portion, and a flammable gas detection film and a heater film are provided in a second half portion. And a common electrode connected to the CO detection film, a CO detection electrode connected to the CO detection film, a combustible gas detection electrode connected to the combustible gas detection film, and a heater electrode connected to the heater film. The first half connects the high thermal conductivity leads to two of the four electrodes and the second half connects the low thermal conductivity leads to the other two electrodes. A wire having high thermal conductivity such as Pt is used for the high thermal conductive lead wire, and a wire having low thermal conductivity such as Pt-W or Pt is used for the low thermal conductive lead wire.
Even when using, a wire having a wire diameter smaller than that of the high thermal conductive lead wire is used. The concept of the first half and the second half means that when the longitudinal direction of the substrate is taken to the left and right, for example, a CO detection film is provided on the right side and a flammable gas detection film and a heater film are provided on the left side. It does not mean that the flammable gas detection film or the heater film partially protrudes to the right of the center line of the substrate.
【0006】請求項2の発明は、前記基板をガラス,石
英,ジルコニア,チタニア,ステアタイト,フォルステ
ライトからなる群の少なくとも一員の物質で構成したこ
とを特徴とする。これらの材料は、ガスセンサの基板に
通常に用いられるアルミナに比べて熱伝導率が数分の1
以下の材料である。請求項3の発明は、ヒータ膜を基板
の裏面に、可燃性ガス検出膜とをCO検出膜を基板の表
面に設け、さらに基板の端面に設けた端面接続部を介し
てヒータ電極と共通電極とを基板の表裏両面に接続した
ことを特徴とする。請求項4の発明は、各電極のリード
線への接続部を導電性ペーストで被覆したことを特徴と
する。The invention of claim 2 is characterized in that the substrate is made of at least one member of the group consisting of glass, quartz, zirconia, titania, steatite, and forsterite. These materials have a fraction of the thermal conductivity of alumina, which is commonly used for gas sensor substrates.
The following materials. According to a third aspect of the present invention, the heater film is provided on the back surface of the substrate, the combustible gas detection film is provided on the front surface of the substrate, and the heater electrode and the common electrode are provided via the end face connecting portion provided on the end face of the substrate. And are connected to both front and back surfaces of the substrate. The invention of claim 4 is characterized in that the connecting portion of each electrode to the lead wire is covered with a conductive paste.
【0007】[0007]
【発明の作用】請求項1の発明では、ヒータ膜を可燃性
ガス検出膜側に配置したので、CO検出膜との間に温度
差が発生する。この温度差はCO検出膜側の高熱伝導リ
ード線での放熱で助長され、かつCO検出膜側の冷却速
度が増加する。これらのため、可燃性ガス検出膜とCO
検出膜との間に大きな温度差を発生させることが出来
る。次に冷却時には、CO検出膜側の高熱伝導リード線
からの放熱でCO検出膜を速やかに冷却し、しかも可燃
性ガス検出膜の最低温度を高くできる。これらのため、
検出のサイクルタイムが短縮する。In the invention of claim 1, since the heater film is arranged on the flammable gas detection film side, a temperature difference occurs between the heater film and the CO detection film. This temperature difference is promoted by heat dissipation from the high thermal conductive lead wire on the CO detection film side, and the cooling rate on the CO detection film side increases. For these reasons, flammable gas detection film and CO
It is possible to generate a large temperature difference with the detection film. Next, at the time of cooling, the CO detection film can be quickly cooled by the heat radiation from the high thermal conductive lead wire on the CO detection film side, and the minimum temperature of the combustible gas detection film can be increased. Because of these
Detection cycle time is shortened.
【0008】請求項2の発明では、基板の熱伝導率を小
さくし、ヒータ膜からCO検出膜への熱伝導を小さく
し、前記の温度差を大きくすると共に、CO検出膜をヒ
ータ膜側からの熱伝導を抑えながら冷却し、サイクルタ
イムをさらに短くする。請求項3の発明では、ヒータ膜
を可燃性ガス検出膜の裏面に配置して基板面積を小さく
し、また端面接続部で基板の表裏の両面配線を行う。請
求項4の発明では、リード線への電極の接続部を導電性
ペーストで被覆し、接続部を補強する。According to the second aspect of the present invention, the thermal conductivity of the substrate is reduced, the heat conduction from the heater film to the CO detection film is reduced, the temperature difference is increased, and the CO detection film is moved from the heater film side. Cools while suppressing the heat conduction of, and further shortens the cycle time. In the invention of claim 3, the heater film is arranged on the back surface of the combustible gas detection film to reduce the area of the substrate, and the front and back surfaces of the substrate are wired at the end face connection portion. In the invention of claim 4, the connecting portion of the electrode to the lead wire is covered with a conductive paste to reinforce the connecting portion.
【0009】[0009]
【実施例】図1〜図3に、実施例を示す。図において、
2はガスセンサ、4は耐熱絶縁基板で、結晶化ガラス
や,石英,ジルコニア,チタニア,ステアタイト(Mg
O・SiO2),フォルステライト(2MgO・SiO
2)が好ましく、これらは熱伝導率がアルミナに比べて
数分の1〜1/20程度である。基板4の熱伝導率を表
1に示す。基板サイズは例えば1.5×2.5mmで厚さ
が0.3mm程度とし、6はCO検出膜、8はCH4検出
膜でLPGの検出用の膜としても良く、10はRuO2
等のヒータ膜である。ここではヒータ膜10を基板4の
図での裏面左半部に配置し、CO検出膜6を右半部に、
CH4検出膜8とヒータ膜10を左半部に配置する。C
O検出膜6やCH4検出膜8にはいずれもSnO2系の金
属酸化物半導体膜を用いたが、それらは材質が異なり、
例えばCO検出膜6はPd等の触媒含量が少なく、CH
4検出膜8は触媒含量が多い。検出膜6,8には、Sn
O2以外の金属酸化物半導体を用いても良い。12は共
通電極、14はCO検出電極、16はCH4検出電極、
18はヒータ電極で、いずれも金や白金等の膜状電極で
ある。共通電極12とヒータ電極18は端面接続部20
を介して基板4の表裏に配線し、共通電極12はCO検
出膜6とCH4検出膜8とヒータ膜10の各々に接続す
る。端面接続部20は、金等の導電性ペーストを基板4
の角部を切り落とした部分に塗布し、焼成して構成す
る。EXAMPLES Examples are shown in FIGS. In the figure,
2 is a gas sensor, 4 is a heat-resistant insulating substrate, such as crystallized glass, quartz, zirconia, titania, steatite (Mg
O.SiO2), forsterite (2MgO.SiO)
2) is preferable, and these have a thermal conductivity of about a fraction of 1 to 1/20 of that of alumina. Table 1 shows the thermal conductivity of the substrate 4. The substrate size is, for example, 1.5 × 2.5 mm and the thickness is about 0.3 mm, 6 is a CO detection film, 8 is a CH4 detection film and may be a film for LPG detection, and 10 is RuO2.
Etc. is a heater film. Here, the heater film 10 is arranged on the left half of the back surface of the substrate 4 in the figure, and the CO detection film 6 is arranged on the right half.
The CH4 detection film 8 and the heater film 10 are arranged in the left half part. C
The O detection film 6 and the CH4 detection film 8 are both made of SnO2 based metal oxide semiconductor films, but they are made of different materials.
For example, the CO detection film 6 has a small amount of catalyst such as Pd, and
4 The detection membrane 8 has a high catalyst content. Sn is used for the detection films 6 and 8.
A metal oxide semiconductor other than O2 may be used. 12 is a common electrode, 14 is a CO detection electrode, 16 is a CH4 detection electrode,
A heater electrode 18 is a film electrode made of gold, platinum, or the like. The common electrode 12 and the heater electrode 18 are connected to the end face connection portion 20.
The common electrode 12 is connected to each of the CO detection film 6, the CH4 detection film 8 and the heater film 10 through the wiring. The end face connecting portion 20 is made of a conductive paste such as gold on the substrate 4.
It is applied by coating on the cut-off corners and baked.
【0010】[0010]
【表1】基板材料の熱伝導率(J/sec・cm・deg)材質 熱伝導率(25℃) 石英 0.017 SiO2ガラス 0.012 ZrO2 0.05 チタニア 0.07 ステアタイト 0.025 フォルステライト 0.03 アルミナ 0.3[Table 1] Thermal conductivity of substrate material (J / sec · cm · deg) Material Thermal conductivity (25 ° C) Quartz 0.017 SiO2 glass 0.012 ZrO2 0.05 Titania 0.07 Steatite 0.025 Form Stellite 0.03 Alumina 0.3
【0011】電極12,14,16,18は、基板4の
4隅のパッドでリード線22,22,23,23に、パ
ラレルギャップ溶接等で接続する。これらのリード線の
内、22,22は低熱伝導リード線で、可燃性ガス検出
膜8やヒータ膜10を設けた基板4の左半部に設け、2
3,23は高熱伝導リード線で、CO検出膜6を設けた
基板4の右半部に設ける。高熱伝導リード線23,23
には、例えば線径70μmのPt線やAu線等の、太く
熱伝導率が高い材料を用いる。低熱伝導リード線22,
22は、例えば線径50〜60μmの細いPt線を用い
線径の差を利用して熱伝導率を減少させ、あるいは線径
50〜70μmのPt−W線,Pt−ZrO2線,AP
M線(Au−Pd−Mo合金線)等の熱伝導率が低い材
料を用いる。低熱伝導リード線22と高熱伝導リード線
23との熱伝導率の差は、同じ線材を用いた場合には線
径の差で、熱伝導率が異なる材料を用いた場合には熱伝
導率の差で発生させる。24は外部ピンで、図示しない
ハウジングに固定してあり、26はリード線22,23
の電極12,14,16,18への接続部を補強するた
めの導電性ペーストで、例えば金ペーストや白金ペース
ト、Niペースト等を用いる。図1に示したように、リ
ード線22,23との接続部は基板4の1面(ここでは
CO検出膜6とCH4検出膜8を設けた面)に集約し、
両面配線のため端面接続部20を用いる。The electrodes 12, 14, 16 and 18 are connected to the lead wires 22, 22, 23 and 23 by pads at the four corners of the substrate 4 by parallel gap welding or the like. Among these lead wires, 22 and 22 are low heat conductive lead wires, which are provided in the left half portion of the substrate 4 on which the combustible gas detection film 8 and the heater film 10 are provided.
Reference numerals 3 and 23 are high thermal conductive lead wires, which are provided in the right half portion of the substrate 4 provided with the CO detection film 6. High thermal conductive lead wires 23, 23
As the material, a thick material having a high thermal conductivity such as a Pt wire or an Au wire having a wire diameter of 70 μm is used. Low heat conduction lead wire 22,
22 is, for example, a thin Pt wire having a wire diameter of 50 to 60 μm and is used to reduce the thermal conductivity by utilizing the difference in wire diameter, or a Pt—W wire, a Pt—ZrO 2 wire, AP having a wire diameter of 50 to 70 μm.
A material having a low thermal conductivity such as an M wire (Au-Pd-Mo alloy wire) is used. The difference in the thermal conductivity between the low thermal conductivity lead wire 22 and the high thermal conductivity lead wire 23 is the difference in the wire diameter when the same wire is used, and the difference in the thermal conductivity when the materials having different heat conductivity are used. Cause by the difference. Reference numeral 24 is an external pin, which is fixed to a housing (not shown), and 26 is lead wires 22 and 23.
A conductive paste for reinforcing the connection to the electrodes 12, 14, 16, 18 of, for example, gold paste, platinum paste, Ni paste or the like is used. As shown in FIG. 1, the connection portions with the lead wires 22 and 23 are collected on one surface of the substrate 4 (here, the surface on which the CO detection film 6 and the CH4 detection film 8 are provided),
The end face connection portion 20 is used for double-sided wiring.
【0012】実施例のガスセンサ2は、例えば図4のガ
スセンサ40のように変形しても良く、42は共通電
極、44はCO検出電極、46はCH4検出電極、48
はヒータ電極で、いずれも金や白金等の膜状電極であ
る。図4の変形例は、特に指摘した点以外は図1〜図3
のガスセンサと同様である。図1,図4に示したよう
に、パッドとCO検出膜6とのクリアランスは、ヒータ
膜10やCH4検出膜8とのクリアランスよりも小さく
し、CO検出膜6からの放熱を大きくする。The gas sensor 2 of the embodiment may be modified, for example, like the gas sensor 40 of FIG. 4, in which 42 is a common electrode, 44 is a CO detection electrode, 46 is a CH4 detection electrode, and 48.
Is a heater electrode, both of which are film electrodes made of gold or platinum. The modification of FIG. 4 is similar to that of FIGS.
It is similar to the gas sensor of. As shown in FIGS. 1 and 4, the clearance between the pad and the CO detection film 6 is made smaller than the clearance between the heater film 10 and the CH4 detection film 8, and the heat radiation from the CO detection film 6 is increased.
【0013】実施例のガスセンサ2,40の動作を示
す。センサ2,40の動作周期は例えば15秒〜30秒
で、この内5〜10秒を高温側に、10〜20秒を低温
側に割り当て、高温側でヒータ膜10をオンし、低温側
でヒータ膜10をオフもしくは消費電力を減少させる。
CH4やLPGは高温側の終了直前のCH4検出膜8の抵
抗値から検出し、COは低温側の終了直前のCO検出膜
6の抵抗値から検出する。The operation of the gas sensors 2 and 40 of the embodiment will be described. The operation cycle of the sensors 2 and 40 is, for example, 15 seconds to 30 seconds, of which 5 to 10 seconds are assigned to the high temperature side and 10 to 20 seconds are assigned to the low temperature side, and the heater film 10 is turned on at the high temperature side and at the low temperature side. The heater film 10 is turned off or the power consumption is reduced.
CH4 and LPG are detected from the resistance value of the CH4 detection film 8 immediately before the end on the high temperature side, and CO is detected from the resistance value of the CO detection film 6 immediately before the end on the low temperature side.
【0014】低温側でヒータ膜10をオフするものとし
て説明すると、ヒータ膜10とCH4検出膜8を基板4
の左半部に集約したため、ヒータ膜10からCH4検出
膜8への熱伝導は速く、高温側ではCH4検出膜の抵抗
値は5〜10秒程度で安定し、最高温度は例えば450
℃となる。この時、リード線23,23の熱伝導率がリ
ード線22,22の熱伝導率より高く、基板4の材質を
ガラスやジルコニア等で熱伝導率が低いため、CO検出
膜6の最高温度は300℃程度となる。リード線23,
23を線径70μmのPt線とし、リード線22,22
を線径60μmのPt線とすると、熱伝導度は10:7
程度となる。またリード線23,23を線径70μmの
Pt線とし、リード線22,22を線径60μmのPt
ーW線とすると、熱伝導度は4:1程度となる。また基
板4の熱伝導率は、表1に示したように、アルミナの数
分の1〜1/20程度である。これ以外にCO検出膜6
側でパッドとCO検出膜6とのクリアランスを小さくし
たことも、温度分布の発生に寄与する。これらのため、
CO検出膜6を適正な最高温度300℃程度に加熱で
き、CH4検出膜8をCH4検出に適した450℃程度に
加熱できる。Explaining that the heater film 10 is turned off at the low temperature side, the heater film 10 and the CH4 detection film 8 are formed on the substrate 4.
Since the heat conduction from the heater film 10 to the CH4 detection film 8 is fast, the resistance value of the CH4 detection film is stable in about 5 to 10 seconds on the high temperature side, and the maximum temperature is, for example, 450.
℃. At this time, since the thermal conductivity of the lead wires 23, 23 is higher than that of the lead wires 22, 22, and the thermal conductivity of the substrate 4 is glass, zirconia, or the like, and the thermal conductivity is low, the maximum temperature of the CO detection film 6 is It will be about 300 ° C. Lead wire 23,
23 is a Pt wire having a wire diameter of 70 μm, and the lead wires 22 and 22 are
Is a Pt wire with a wire diameter of 60 μm, the thermal conductivity is 10: 7.
About. The lead wires 23, 23 are Pt wires having a wire diameter of 70 μm, and the lead wires 22, 22 are Pt wires having a wire diameter of 60 μm.
With the -W line, the thermal conductivity is about 4: 1. Further, the thermal conductivity of the substrate 4 is, as shown in Table 1, about a fraction of 1 to 1/20 of that of alumina. In addition to this, the CO detection film 6
The smaller clearance between the pad and the CO detection film 6 on the side also contributes to the generation of the temperature distribution. Because of these
The CO detection film 6 can be heated to an appropriate maximum temperature of about 300 ° C., and the CH4 detection film 8 can be heated to about 450 ° C. suitable for CH4 detection.
【0015】ヒータ膜10をオフし、CO検出膜6とC
H4検出膜8を冷却すると、リード線23,23からの
放熱が大きく、しかも基板4の熱伝導度が小さく、CH
4検出膜8やヒータ膜10からの伝熱が少ないため、C
O検出膜6の温度は急激に低下し、例えば10〜20秒
程度で80℃程度に低下し、この温度でのCO検出膜6
の抵抗値からCOを検出する。この間リード線22,2
2の放熱が小さく、基板4の熱伝導度が小さいため、C
H4検出膜8は余り冷却されず、最低温度は例えば20
0℃程度となる。これらのため、15〜30秒程度の周
期でガスセンサ2,40を駆動でき、検出のサイクルタ
イムを短くし、しかもCO検出膜6とCH4検出膜8に
大きな温度差を与えることができる。The heater film 10 is turned off, and the CO detection film 6 and C
When the H4 detection film 8 is cooled, the heat radiation from the lead wires 23, 23 is large, and the thermal conductivity of the substrate 4 is small.
4 Since there is little heat transfer from the detection film 8 and the heater film 10, C
The temperature of the O detection film 6 drops sharply, for example, to about 80 ° C. in about 10 to 20 seconds, and the CO detection film 6 at this temperature.
CO is detected from the resistance value of. During this time, the lead wires 22, 2
2 has a small heat dissipation and the substrate 4 has a low thermal conductivity, so that C
The H4 detection film 8 is not cooled so much and the minimum temperature is, for example, 20.
It will be about 0 ° C. Therefore, the gas sensors 2 and 40 can be driven at a cycle of about 15 to 30 seconds, the detection cycle time can be shortened, and a large temperature difference can be given to the CO detection film 6 and the CH4 detection film 8.
【0016】リード線22,23は全て基板4の同じ面
でボンディングしたので、ボンディングが容易で、しか
も耐振性が高い。例えばリード線22,23を2本ずつ
基板4の表裏に配置すると、落下試験での損傷が2倍以
上に増加する。次にボンディング部は導電性ペースト2
6で補強してあるので、耐振性はさらに向上する。Since the lead wires 22 and 23 are all bonded on the same surface of the substrate 4, the bonding is easy and the vibration resistance is high. For example, if two lead wires 22 and 23 are arranged on the front and back of the substrate 4, damage in the drop test will be more than doubled. Next, the bonding portion is a conductive paste 2
Since it is reinforced with 6, vibration resistance is further improved.
【0017】[0017]
【発明の効果】請求項1の発明では、高熱伝導リード線
からの放熱を利用し、CO検出膜の冷却を速めて検出の
サイクルタイムを短縮し、かつ可燃性ガス検出膜とCO
検出膜とに充分な温度差を設ける。請求項2の発明で
は、基板の熱伝導を小さくして、前記の温度差をより大
きくし、検出のサイクルタイムをより短くする。請求項
3の発明では、端面接続部を介してヒータ電極や共通電
極を基板の表裏両面に配線し、基板面積を小さくする。
請求項4の発明では、導電性ペーストで電極とリード線
との接続を補強し、ガスセンサの落下や振動等への耐久
性を改善する。According to the first aspect of the present invention, the heat radiation from the high thermal conductive lead wire is used to accelerate the cooling of the CO detection film to shorten the cycle time of detection, and the combustible gas detection film and the CO
Provide a sufficient temperature difference with the detection film. According to the second aspect of the present invention, the heat conduction of the substrate is reduced, the temperature difference is increased, and the detection cycle time is reduced. According to the third aspect of the present invention, the heater electrode and the common electrode are wired on both the front and back surfaces of the substrate via the end face connecting portion to reduce the substrate area.
According to the invention of claim 4, the connection between the electrode and the lead wire is reinforced by the conductive paste, and the durability of the gas sensor against drop, vibration and the like is improved.
【図1】 実施例のガスセンサの平面図FIG. 1 is a plan view of a gas sensor according to an embodiment.
【図2】 実施例のガスセンサの要部側面図FIG. 2 is a side view of a main part of the gas sensor according to the embodiment.
【図3】 実施例のガスセンサの要部背面図FIG. 3 is a rear view of the main part of the gas sensor according to the embodiment.
【図4】 変形例のガスセンサの要部平面図FIG. 4 is a plan view of a main part of a gas sensor according to a modified example.
2,40 ガスセンサ 4 基板 6 CO検出膜 8 CH4検出膜 10 ヒータ膜 12,42 共通電極 14,44 CO検出電極 16,46 CH4検出電極 18 ヒータ電極 20 端面接続部 22 低熱伝導リード線 23 高熱伝導リード線 24 ピン 26 導電性ペースト 2,40 Gas sensor 4 Substrate 6 CO detection film 8 CH4 detection film 10 Heater film 12,42 Common electrode 14,44 CO detection electrode 16,46 CH4 detection electrode 18 Heater electrode 20 End face connection part 22 Low thermal conductive lead wire 23 High thermal conductive lead Wire 24 pin 26 Conductive paste
Claims (4)
部にCO検出膜を、第2半部に可燃性ガス検出膜とヒー
タ膜とを設け、 各膜に接続した共通電極と、CO検出膜に接続したCO
検出電極と、可燃性ガス検出膜に接続した可燃性ガス検
出電極と、ヒータ膜に接続したヒータ電極との4つの電
極を設け、 前記第1半部で前記4つの電極中の2つの電極に高熱伝
導リード線を接続し、前記第2半部で他の2つの電極に
低熱伝導リード線を接続したガスセンサ。1. A substantially rectangular heat-resistant insulating substrate is provided with a CO detection film in the first half and a flammable gas detection film and a heater film in the second half, and a common electrode connected to each film, CO connected to the CO detection membrane
Four electrodes, a detection electrode, a combustible gas detection electrode connected to the combustible gas detection film, and a heater electrode connected to the heater film, are provided, and two electrodes among the four electrodes are provided in the first half part. A gas sensor in which a high thermal conductivity lead wire is connected and a low thermal conductivity lead wire is connected to the other two electrodes in the second half portion.
チタニア,ステアタイト,フォルステライトからなる群
の少なくとも一員の物質で構成したことを特徴とする、
請求項1のガスセンサ。2. The substrate is glass, quartz, zirconia,
Characterized by comprising at least one member of the group consisting of titania, steatite, forsterite,
The gas sensor according to claim 1.
出膜とをCO検出膜を基板の表面に設け、さらに基板の
端面に設けた端面接続部を介してヒータ電極と共通電極
とを基板の表裏両面に接続したことを特徴とする、請求
項1のガスセンサ。3. A heater film is provided on the back surface of the substrate, a flammable gas detection film and a CO detection film are provided on the front surface of the substrate, and a heater electrode and a common electrode are connected via an end face connecting portion provided on the end face of the substrate. The gas sensor according to claim 1, wherein the gas sensor is connected to both front and back surfaces of the substrate.
ーストで被覆したことを特徴とする、請求項1のガスセ
ンサ。4. The gas sensor according to claim 1, wherein the connecting portion of each electrode to the lead wire is covered with a conductive paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4655795A JPH08220041A (en) | 1995-02-09 | 1995-02-09 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4655795A JPH08220041A (en) | 1995-02-09 | 1995-02-09 | Gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08220041A true JPH08220041A (en) | 1996-08-30 |
Family
ID=12750635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4655795A Pending JPH08220041A (en) | 1995-02-09 | 1995-02-09 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08220041A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007017217A (en) * | 2005-07-06 | 2007-01-25 | Fuji Electric Fa Components & Systems Co Ltd | Thin film gas sensor |
| JP2015093254A (en) * | 2013-11-13 | 2015-05-18 | 大阪瓦斯株式会社 | Adsorbent resin material, siloxane remover, filter using the same, gas sensor and gas detector provided with the filter |
| WO2015173974A1 (en) * | 2014-05-16 | 2015-11-19 | 株式会社立山科学デバイステクノロジー | Gas sensor |
-
1995
- 1995-02-09 JP JP4655795A patent/JPH08220041A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007017217A (en) * | 2005-07-06 | 2007-01-25 | Fuji Electric Fa Components & Systems Co Ltd | Thin film gas sensor |
| JP2015093254A (en) * | 2013-11-13 | 2015-05-18 | 大阪瓦斯株式会社 | Adsorbent resin material, siloxane remover, filter using the same, gas sensor and gas detector provided with the filter |
| WO2015173974A1 (en) * | 2014-05-16 | 2015-11-19 | 株式会社立山科学デバイステクノロジー | Gas sensor |
| JP2015219093A (en) * | 2014-05-16 | 2015-12-07 | 株式会社立山科学デバイステクノロジー | Gas sensor |
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