JPH08236557A - Semiconductor integrated circuit device and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] [Object] To provide a resin-encapsulated semiconductor integrated circuit device for improving heat dissipation and a method for manufacturing the same. [Structure] The semiconductor element 1 is directly mounted and the semiconductor element 1
Heat diffusion member 2 that radiates the heat generated by the outside, a lead frame 3 that extends to the outside of the heat diffusion member 2 and is electrically connected to the electrode 1a of the semiconductor element 1, the heat diffusion member 2, and the lead frame. An insulating member 4 which insulates the insulating member 3 from the mold 3 and contacts a mold for resin molding when the resin is sealed, and the insulating member 4 is a dam bar formed of an adhesive tape having adhesiveness and narrow width, The inner lead portion 3a of the lead frame 3 is attached to the heat diffusion member 2 via the insulating member 4, and only the semiconductor element mounting surface 2a of the heat diffusion member 2 is made of the resin 8
Is sealed by.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device and a manufacturing technique thereof, and more particularly to a semiconductor integrated circuit device sealed with resin and a manufacturing method thereof.

[0002]

2. Description of the Related Art The techniques described below are for studying the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

Along with the miniaturization, weight reduction, high performance, and cost reduction of electronic devices and computers, the speed and the degree of integration of semiconductor integrated circuit devices to be mounted have been increased.

As a result, the lead frame in the semiconductor integrated circuit device has been made finer in pitch, has more pins, and has a wider outer shape, and the size per function has been significantly reduced.

Therefore, as an example of a semiconductor integrated circuit device that meets the above requirements, a resin-sealed semiconductor integrated circuit device called QFP (Quad Flat Package) is known. The lead frame used in this QFP is composed of a tab for mounting a semiconductor element, an inner lead for electrically connecting with an electrode of the semiconductor element, and an outer lead for electrically connecting with a printed board on which a semiconductor integrated circuit device is mounted. It is configured.

Further, the outer leads are connected to the inner leads on a frame of an outer frame.

Further, the resin sealing is performed in order to protect the semiconductor element and the wire portion after mounting the semiconductor element on the tab and connecting the electrode of the semiconductor element and the inner lead by wire bonding.

Regarding QFP, for example, Nikkei B
"Practice Course VLSI Packaging Technology (above)" issued by Company P, May 31, 1993, Susumu Kayama, Kunihiko Naruse (Director), page 85.

[0009]

However, in the above-mentioned technique, the resin used in the resin-encapsulated semiconductor integrated circuit device such as QFP often has a low thermal conductivity.

As a result, when the speed of signals and the degree of integration of wirings increase, heat dissipation becomes a problem when the power consumption of semiconductor elements increases.

Therefore, an object of the present invention is to provide a resin-encapsulated semiconductor integrated circuit device for improving heat dissipation and a method for manufacturing the same.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0013]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

That is, in the semiconductor integrated circuit device according to the present invention, the semiconductor element is directly mounted, and the heat diffusion member that radiates the heat generated by the semiconductor element to the outside, and the semiconductor element that extends to the outside of the heat diffusion member. A lead frame electrically connected to the electrodes of the element; and an insulating member that insulates the heat diffusion member and the lead frame from each other and contacts a mold for resin molding at the time of resin sealing. The inner lead portion is attached to the heat diffusion member via the insulating member.

The insulating member in the semiconductor integrated circuit device of the present invention is a dam bar formed of an insulating tape having a narrow width and having an adhesive property.

Further, in the semiconductor integrated circuit device according to the present invention, only the semiconductor element mounting surface of the heat diffusion member is sealed with resin.

Further, in the semiconductor integrated circuit device according to the present invention, the heat diffusion member has a radiation fin.

In the method for manufacturing a semiconductor integrated circuit device according to the present invention, the resin is sealed in a sealed area formed by the heat diffusion member, the mold, the lead frame, and the insulating member when the resin is sealed. Is poured and cured to seal the semiconductor element and its peripheral portion.

[0019]

According to the above-mentioned means, the semiconductor element is directly mounted, and the heat diffusion member that radiates the heat generated by the semiconductor element to the outside, and the electrode that extends to the outside of the thermal diffusion member and is electrically connected to the electrode of the semiconductor element. Since the semiconductor element directly contacts the heat diffusion member by having the connected lead frame and the insulating member that insulates the heat diffusion member and the lead frame from each other and contacts the mold for resin molding at the time of resin sealing Therefore, the heat dissipation of the semiconductor element can be improved.

Further, since the insulating member is a dam bar formed of a narrow insulating tape having adhesiveness, the insulating member can prevent the resin from leaking during resin sealing.

Further, since the semiconductor element is directly mounted on the heat diffusion member and the inner lead portion of the lead frame is fixed to the heat diffusion member via the insulating member, the semiconductor element and the inner lead portion are displaced. Can be reduced, and the positional relationship between the two can always be kept stable.

Since only the semiconductor element mounting surface of the heat diffusion member is sealed with resin, the size of the semiconductor integrated circuit device can be reduced.

Further, since the heat diffusion member has the heat radiation fins, the heat radiation property of the semiconductor element can be further improved.

[0024]

Embodiments of the present invention will now be described in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view showing an embodiment of the structure of a semiconductor integrated circuit device of the present invention, and FIG. 2 is a view showing an embodiment of a method of manufacturing a semiconductor integrated circuit device of the present invention. Yes, (a) is a partial cross-sectional view, (b) is a partial plan view, (c)
FIG.

First, the structure of the semiconductor integrated circuit device according to the first embodiment will be described. The heat diffusion member 2 for directly mounting the semiconductor element 1 and for radiating the heat generated by the semiconductor element 1 to the outside.
A lead frame 3 extending to the outside of the heat diffusion member 2 and electrically connected to the electrode 1a of the semiconductor element 1, and a resin molding for insulating the heat diffusion member 2 from the lead frame 3 and for resin sealing. The inner lead portion 3 a of the lead frame 3 is attached to the heat diffusion member 2 via the insulating member 4.

The semiconductor element 1 is directly fixed near the center of the heat diffusion member 2 with a paste 6 or the like, and the electrode 1a of the semiconductor element 1 is bonded to the bonding wire 7.
Is connected to the inner lead portion 3a of the lead frame 3.

Here, the heat diffusion member 2 is formed of, for example, a metal such as aluminum having excellent heat dissipation and workability, and the shape of the heat diffusion member 2 of the first embodiment is predetermined. It is a plate having a thickness.

The insulating member 4 is, for example, in the form of a frame made of a polyimide insulating material,
Further, it is a dam bar formed of a narrow insulating tape having adhesiveness.

Therefore, the insulating member 4, which is a frame-shaped insulating tape, is placed on the heat diffusion member 2 at a position where it contacts the mold 5 at the time of resin molding, that is, at a position where the mold 5 on the heat diffusion member 2 is joined. It is stuck.

In the semiconductor integrated circuit device according to the first embodiment, only the semiconductor element mounting surface 2a of the heat diffusion member 2 is sealed with the resin 8 such as epoxy resin.
The surface of the heat diffusion member 2 other than the semiconductor element mounting surface 2a is exposed.

Next, a method of manufacturing the semiconductor integrated circuit device according to the first embodiment will be described.

First, the insulating member 4, which is an insulating tape, is attached to the heat diffusion member 2 at a position where it is fitted with the mold 5.

Further, the inner lead portion 3a of the lead frame 3 is attached to the insulating member 4, and the lead frame 3 is attached to the heat diffusion member 2.

After that, the semiconductor element 1 is fixed to the vicinity of the center of the semiconductor element mounting surface 2a of the heat diffusion member 2 by using the paste agent 6. That is, the semiconductor element 1 is directly mounted on the heat diffusion member 2 via the paste agent 6.

Subsequently, the electrode 1a of the semiconductor element 1 and the inner lead portion 3a of the lead frame 3 are bonded by a bonding wire 7 such as a gold wire.

After that, only the semiconductor element mounting surface 2a of the heat diffusion member 2 is sealed with the resin 8. At this time,
As shown in (c), the hermetically sealed area 1 formed by the heat diffusion member 2, the mold 5, the lead frame 3, and the insulating member 4.
A resin 8 (see FIG. 1) is poured into 1 and cured to seal the semiconductor element 1 and its peripheral portion.

That is, the die 5 is brought into contact with the inner lead portion 3a of the lead frame 3, and a predetermined load is applied between the die 5 and the heat diffusion member 2 supported by the support member 10. Therefore, the resin 8 is poured into the closed region 11 and cured.

As a result, the resin sealing is completed, and then the outer lead portion 3b of the lead frame 3 is cut and bent.

Next, the effect obtained by the semiconductor integrated circuit device of the first embodiment will be described.

First, the thermal diffusion member 2 for directly mounting the semiconductor element 1 and radiating the heat generated by the semiconductor element 1 to the outside, and the electrode 1a of the semiconductor element 1 extending to the outside of the thermal diffusion member 2.
The semiconductor element is provided with the lead frame 3 electrically connected to the heat diffusion member 2 and the insulating member 4 which insulates the heat diffusion member 2 and the lead frame 3 from each other and is in contact with the mold 5 for resin molding at the time of resin sealing. Since 1 directly contacts the heat diffusion member 2, the heat dissipation of the semiconductor element 1 can be improved.

Further, since the heat dissipation can be improved, the semiconductor element 1 which consumes a large amount of power can be mounted.

The size and shape of the heat diffusion member 2 can be easily changed according to the power consumption of the semiconductor element 1.

Since the insulating member 4 is a dam bar having adhesiveness and formed of a narrow insulating tape, the insulating member 4 prevents leakage of the resin 8 during resin sealing. You can

The semiconductor element 1 is directly mounted on the heat diffusion member 2, and the inner lead portion 3 of the lead frame 3 is further mounted.
Since a is fixed to the heat diffusion member 2 via the insulating member 4, the displacement between the semiconductor element 1 and the inner lead portion 3a can be reduced, and the positional relationship between the two can be always kept stable. .

As a result, connection failure due to deformation of the bonding wire can be reduced.

Further, since only the semiconductor element mounting surface 2a of the heat diffusion member 2 is sealed with the resin 8, the size of the semiconductor integrated circuit device can be reduced.

As a result, the heat diffusion member 2 can be made large and the heat dissipation can be improved. As a result, it becomes possible to mount the semiconductor element 1 which consumes a large amount of power similarly to the above.

Further, when the resin sealing is performed, the heat diffusion member 2
The resin 8 is poured into the sealed region 11 formed by the mold 5, the lead frame 3 and the insulating member 4 to seal the semiconductor element 1 and its peripheral portion, thereby simplifying the shape of the mold 5. The size of the mold 5 can be reduced. As a result, the manufacturing cost of the semiconductor integrated circuit device can be reduced.

(Embodiment 2) FIG. 3 is a sectional view showing an example of the structure of a semiconductor integrated circuit device which is another embodiment of the present invention, and FIG. 4 is a semiconductor integrated circuit device which is another embodiment of the present invention. It is a figure showing an example of a manufacturing method, (a) is a partial sectional view,
(B) is a partial plan view and (c) is a partial sectional view.

The structure of the semiconductor integrated circuit device according to the second embodiment will be described. To the outside of the heat diffusion member 2 and the heat diffusion member 2 which directly mounts the semiconductor element 1 and radiates the heat generated by the semiconductor element 1 to the outside. The electrode 1a of the semiconductor element 1 which extends
A lead frame 3 electrically connected to the lead frame 3; and an insulating member 4 that insulates the heat diffusion member 2 and the lead frame 3 from each other and is in contact with a mold 5 for resin molding at the time of resin sealing. The inner lead portion 3 a of the above is attached to the heat diffusion member 2 via the insulating member 4.

Here, the heat diffusion member 2 of the semiconductor integrated circuit device according to the second embodiment has a radiation fin 9 having a comb-shaped cross section. Further, the heat diffusion member 2 is formed of a metal such as aluminum having excellent heat dissipation and workability, as in the case described in the first embodiment.

The other structure of the semiconductor integrated circuit device of the second embodiment and the manufacturing method thereof are the same as those of the first embodiment.
Since it is the same as the one described above, the duplicated description will be omitted.

The effect obtained from the semiconductor integrated circuit device of the second embodiment is that the heat dissipating member 2 has the heat dissipating fins 9, so that the heat dissipating property of the semiconductor element 1 can be further improved.

Since the other effects obtained from the semiconductor integrated circuit device of the second embodiment are the same as those described in the first embodiment, the duplicated description will be omitted.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, in the semiconductor integrated circuit device described in the above embodiment, only the semiconductor element mounting surface of the heat diffusion member is resin-sealed, but the semiconductor of the other embodiment of the present invention shown in FIG. As shown in the cross-sectional view of the integrated circuit device, the semiconductor element mounting surface 2a of the heat diffusion member 2 and the side surface 2 continuing from the semiconductor element mounting surface 2a.
b may be sealed with the resin 8.

The insulating member described in the above embodiment is
Although the insulating tape has adhesiveness, the insulating tape having no adhesiveness may be coated with a high heat resistant adhesive or the like.

Further, an epoxy resin or the like may be used instead of the insulating member. That is, even if the epoxy resin is applied to the heat diffusion member and the inner lead portion of the lead frame is attached thereto, a semiconductor integrated circuit device similar to the above embodiment can be manufactured.

Although the heat diffusion member described in the above embodiment is made of aluminum, it may be made of other metal such as copper.

In the semiconductor integrated circuit device described in the above embodiment, the electrode of the semiconductor element and the inner lead portion of the lead frame are connected by a bonding wire, but they are connected by ball bonding using bumps. It may be one that is done.

Further, although the heat dissipating fins of the heat diffusion member described in the second embodiment have a comb-shaped cross section, the shape of the heat dissipating fins corresponds to the heat dissipating area of the heat dissipating member. Other shapes may be used as long as they can be enlarged.

[0063]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). A heat diffusion member that directly mounts the semiconductor element and radiates heat generated by the semiconductor element to the outside, a lead frame that extends to the outside of the heat diffusion member and is electrically connected to an electrode of the semiconductor element, and a heat diffusion member Since the semiconductor element is in direct contact with the heat diffusion member by having an insulating member that insulates the lead frame and the lead frame and is in contact with the mold for resin molding at the time of resin sealing, the heat dissipation of the semiconductor element is improved. be able to.

(2). According to the above (1), the heat dissipation of the semiconductor element can be improved, so that a semiconductor element consuming large power can be mounted.

(3). The size and shape of the heat diffusion member can be easily changed according to the power consumption of the semiconductor element.

(4). Since the insulating member is a dam bar formed of a narrow insulating tape having adhesiveness, the insulating member can prevent the resin from leaking during resin sealing.

(5). By mounting the semiconductor element directly on the heat diffusion member, and further, by fixing the inner lead portion of the lead frame to the heat diffusion member via the insulating member,
The displacement between the semiconductor element and the inner lead portion can be reduced, and the positional relationship between the two can be always kept stable.
As a result, connection failure due to deformation of the bonding wire can be reduced.

(6). Since only the semiconductor element mounting surface of the heat diffusion member is sealed with the resin, the size of the semiconductor integrated circuit device can be reduced.

This makes it possible to increase the size of the heat diffusion member and improve heat dissipation. As a result, it becomes possible to mount a semiconductor element with high power consumption.

(7). Since the heat diffusion member has the heat dissipation fins, the heat dissipation of the semiconductor element can be further improved.

(8). When performing resin sealing, the resin is poured into a sealed region formed by the heat diffusion member, the mold, the lead frame, and the insulating member, and the semiconductor element and its peripheral portion are sealed so that the shape of the mold is changed. Simplify,
Further, the size of the mold can be reduced. As a result, the manufacturing cost of the semiconductor integrated circuit device can be reduced.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the structure of a semiconductor integrated circuit device of the present invention.

2A and 2B are views showing an embodiment of a method for manufacturing a semiconductor integrated circuit device according to the present invention, in which FIG. 2A is a partial sectional view, FIG. 2B is a partial plan view, and FIG.

FIG. 3 is a sectional view showing an example of the structure of a semiconductor integrated circuit device which is another embodiment of the present invention.

FIG. 4 is a diagram showing an example of a method of manufacturing a semiconductor integrated circuit device according to another embodiment of the present invention, in which (a) is a partial cross-sectional view, (b) is a partial plan view, and (c) is a partial cross-sectional view. It is a figure.

FIG. 5 is a sectional view showing an example of the structure of a semiconductor integrated circuit device which is another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 1a Electrode 2 Thermal diffusion member 2a Semiconductor element mounting surface 2b Side surface 3 Lead frame 3a Inner lead part 3b Outer lead part 4 Insulating member 5 Mold 6 Paste agent 7 Bonding wire 8 Resin 9 Radiating fin 10 Supporting member 11 Sealing area

Claims (5)

[Claims] 1. A resin-encapsulated semiconductor integrated circuit device, comprising: a semiconductor element directly mounted on the semiconductor element; and a heat diffusion member that radiates heat generated by the semiconductor element to the outside, and a heat diffusion member that extends to the outside of the heat diffusion member. A lead frame that is present and electrically connected to the electrodes of the semiconductor element; and an insulating member that insulates the heat diffusion member and the lead frame from each other and that contacts a mold for resin molding during resin sealing. An inner lead portion of the lead frame is attached to the heat diffusion member via the insulating member. 2. The semiconductor integrated circuit device according to claim 1, wherein the insulating member is a dambar formed of a narrow insulating tape having adhesiveness. apparatus. 3. The semiconductor integrated circuit device according to claim 1 or 2, wherein only the semiconductor element mounting surface of the heat diffusion member is sealed with resin. 4. The semiconductor integrated circuit device according to claim 1, wherein the heat diffusion member has a radiation fin. 5. The method for manufacturing a semiconductor integrated circuit device according to claim 1, 2, 3, or 4, wherein the heat diffusion member, the mold, the lead frame, and the insulation are formed when resin sealing is performed. A method for manufacturing a semiconductor integrated circuit device, comprising: pouring a resin into a sealed region formed by a member and curing the resin to seal the semiconductor element and its peripheral portion.