JPH0826829A - Silicon nitride sintered body - Google Patents
Silicon nitride sintered bodyInfo
- Publication number
- JPH0826829A JPH0826829A JP6182953A JP18295394A JPH0826829A JP H0826829 A JPH0826829 A JP H0826829A JP 6182953 A JP6182953 A JP 6182953A JP 18295394 A JP18295394 A JP 18295394A JP H0826829 A JPH0826829 A JP H0826829A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- silicon nitride
- strength
- nitride sintered
- phase
- Prior art date
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ガスタービン等の熱機
関に好適な強度及び耐クリープ性に優れた窒化珪素焼結
体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon nitride sintered body suitable for a heat engine such as a gas turbine and having excellent strength and creep resistance.
【0002】[0002]
【従来の技術】窒化珪素焼結体は、機械的特性、耐熱性
及び耐食性等に優れているため、自動車用エンジンやガ
スタービンエンジン等の熱機関で用いられる構造材料へ
の応用が試みられている。2. Description of the Related Art Since a silicon nitride sintered body is excellent in mechanical properties, heat resistance, corrosion resistance, etc., it has been attempted to be applied to structural materials used in heat engines such as automobile engines and gas turbine engines. There is.
【0003】この窒化珪素は、共有結合性が高いため難
焼結性であって、焼結させるためにはAl2O3、MgO
及び希土類元素酸化物等の焼結助剤が必要である。しか
し、こうして得られた焼結体は、高温において強度が低
下するため、焼結助剤の検討や粒界を結晶化する等の試
みがなされてきた。例えば、特開昭64-56368号公報にお
いては粒界をアパタイトあるいはダイシリケートに、特
開昭64-61357号公報においては粒界をウォラストナイト
あるいはカスピデインに、特開昭64-61358号公報におい
ては粒界をメリライトに結晶化して高温高強度を実現し
ている。また、表面状態の劣化による強度の低下を防ぐ
ため焼結体表層部の酸素量を内部より多くする試みが、
特開平4-154667号公報により開示されている。Since this silicon nitride has a high covalent bond, it is difficult to sinter, and Al 2 O 3 and MgO are required for sintering.
And a sintering aid such as a rare earth element oxide is required. However, the strength of the thus-obtained sintered body decreases at high temperatures, and various attempts have been made to study sintering aids and crystallize grain boundaries. For example, in JP-A-64-56368, the grain boundaries are apatite or disilicate, in JP-A-64-61357 the grain boundaries are wollastonite or caspadein, and in JP-A-64-61358. Has crystallized grain boundaries into melilite to achieve high temperature and high strength. In addition, an attempt to increase the amount of oxygen in the surface layer of the sintered body from the inside in order to prevent deterioration of strength due to deterioration of the surface condition,
It is disclosed in Japanese Patent Application Laid-Open No. 4-154667.
【0004】[0004]
【発明が解決しようとする課題】このように従来、窒化
珪素焼結体においては主として組成及び焼結条件等を検
討することにより高強度を達成してきた。しかし、これ
らの焼結体は室温において高強度であっても、依然とし
て高温での強度劣化が大きいあるいは耐クリープ性が悪
いという課題や、高温で強度を維持させるため粒界結晶
化処理を施した結果として室温の強度レベルが低下して
しまうなどの課題があった。As described above, conventionally, in the silicon nitride sintered body, high strength has been achieved mainly by examining the composition and sintering conditions. However, even though these sintered bodies have high strength at room temperature, they are still subject to large strength deterioration at high temperature or poor creep resistance, and are subjected to grain boundary crystallization treatment to maintain strength at high temperature. As a result, there is a problem that the strength level at room temperature is lowered.
【0005】本発明の目的は、最高約1500℃で使用
される構造材料として十分な強度及び耐久性を有し、一
方室温においても比較的高い強度を有する窒化珪素焼結
体を提供することにある。An object of the present invention is to provide a silicon nitride sintered body which has sufficient strength and durability as a structural material used at a maximum temperature of about 1500 ° C. and has a relatively high strength even at room temperature. is there.
【0006】[0006]
【課題を解決するための手段】その目的を達成するため
に、この発明の窒化珪素焼結体は、窒化珪素粒子とR
(Rは希土類元素)、Si、O及びNを含む粒界相とか
らなる焼結体において、その表層部にのみメリライト相
(R2Si3N4O3)が存在することを特徴とする。In order to achieve the object, the silicon nitride sintered body of the present invention comprises silicon nitride particles and R
(R is a rare earth element), a sintered body composed of a grain boundary phase containing Si, O and N is characterized in that a melilite phase (R 2 Si 3 N 4 O 3 ) is present only in the surface layer portion thereof. .
【0007】上記希土類元素は、周期表3A族のSc、
Y及びランタノイド元素のいずれかであるが、就中Y、
Er、Ybが好ましい。ここで、メリライト相とはJC
PDSカードNo.28-1457と同一のX線回折パターン
を有する結晶相である。そして、このメリライト相が存
在する表層部の厚みが10〜500μmである窒化珪素
焼結体が好ましい。The rare earth element is Sc of the 3A group of the periodic table,
Either Y or a lanthanoid element, but especially Y,
Er and Yb are preferred. Here, the melilite phase is JC
PDS card No. It is a crystal phase having the same X-ray diffraction pattern as 28-1457. A silicon nitride sintered body having a surface layer portion having the melilite phase having a thickness of 10 to 500 μm is preferable.
【0008】更に好ましくは、前記窒化珪素焼結体中の
希土類元素をR2O3に換算したモル量と焼結体中の酸素
量からR2O3に含まれる酸素量を差し引いた残りの酸素
量をSiO2に換算したモル量から計算されるSiO2/
(R2O3+SiO2)の値は0.5〜0.8であること
を特徴とする。More preferably, the rare earth element in the silicon nitride sintered body is converted into R 2 O 3 molar amount and the oxygen amount in the sintered body is subtracted from the residual oxygen amount contained in R 2 O 3 . SiO 2 that the amount of oxygen is calculated from the molar amount in terms of SiO 2 /
The value of (R 2 O 3 + SiO 2 ) is 0.5 to 0.8.
【0009】[0009]
【作用】通常、窒化珪素焼結体においては同一の焼結助
剤を用いている場合、粒界相が結晶化していると粒界相
がガラス相の場合より、高温での強度劣化は小さく、室
温強度が低い値となる。本発明によれば、焼結体表層部
の粒界は実質的にメリライト相に結晶化しており、残留
ガラスは非常に少ないため高温強度に優れたもの(15
00℃にて450MPa以上、より好ましくは500M
Pa以上)となる。また、表層部のみメリライトに結晶
化していることにより、表層部粒界と内部粒界とで焼成
後に熱膨張差が生じて室温付近の温度では焼結体に残留
応力が発生しており、室温強度も耐熱性材料としては比
較的高い値(700MPa以上、より好ましくは800
MPa以上)を示す。In general, when the same sintering aid is used in the silicon nitride sintered body, the strength deterioration at high temperature is smaller when the grain boundary phase is crystallized than when the grain boundary phase is the glass phase. The room temperature strength has a low value. According to the present invention, the grain boundary of the surface layer of the sintered body is substantially crystallized in the melilite phase, and the residual glass is very small, so that the high temperature strength is excellent (15
450 MPa or more at 00 ° C, more preferably 500 M
Pa or more). In addition, since only the surface layer portion is crystallized to melilite, a difference in thermal expansion occurs between the surface layer portion grain boundary and the internal grain boundary, and residual stress occurs in the sintered body at a temperature near room temperature. The strength is relatively high as a heat resistant material (700 MPa or more, more preferably 800 MPa).
MPa or higher).
【0010】メリライト相が存在する表層部の厚みを1
0〜500μmとしたのは、この範囲より薄いとメリラ
イト相において問題となる1000℃付近での酸化でメリラ
イト相が全てSiO2とR2Si2O7に変化してしまい、
高温での高強度化が達成されないからである。一方、上
記残留応力は、内部と表層部との界面近傍で最大とな
り、そこから離れるに従って小さくなるので、その範囲
より厚くなると表層部の残留応力が低下し室温強度が低
下してしまうからである。上記厚みのうち、特に好まし
い範囲は50〜300μmである。The thickness of the surface layer portion where the melilite phase is present is 1
When the thickness is less than this range, the melilite phase is changed to SiO 2 and R 2 Si 2 O 7 due to oxidation at around 1000 ° C.
This is because high strength at high temperature cannot be achieved. On the other hand, the above-mentioned residual stress becomes maximum near the interface between the inside and the surface layer portion and becomes smaller as the distance from the interface increases, so that if the thickness exceeds this range, the residual stress in the surface layer portion will decrease and the room temperature strength will decrease. . A particularly preferable range of the thickness is 50 to 300 μm.
【0011】焼結体組織に関しては、微細な等軸状の窒
化珪素粒子の均一な組織である場合、室温では高強度を
示すものの高温での劣化が大きく、また耐クリープ性も
低い。高温での強度及び耐久性を維持するためには、等
軸状の微細粒子と柱状の粗大粒子の複合組織である方が
有利である。Regarding the sintered body structure, in the case of a uniform structure of fine equiaxed silicon nitride particles, it exhibits high strength at room temperature, but is greatly deteriorated at high temperature, and its creep resistance is also low. In order to maintain strength and durability at high temperatures, it is advantageous to have a composite structure of equiaxed fine particles and columnar coarse particles.
【0012】焼結体中のSiO2/(R2O3+SiO2)
の値を0.5〜0.8としているのは、この範囲内(特
に好ましくは0.55〜0.75)であれば焼結体組織
が微細粒子と粗大粒子の複合組織となるが、この値が
0.5より小さいと焼結体組織が全体的に粗くなって室
温強度を低下させること、0.8より大きいと緻密化が
困難であり高強度の焼結体を得難いという問題がある。SiO 2 / (R 2 O 3 + SiO 2 ) in the sintered body
The value of 0.5 to 0.8 is within this range (particularly preferably 0.55 to 0.75), but the sintered body structure is a composite structure of fine particles and coarse particles, If this value is smaller than 0.5, the structure of the sintered body becomes coarse as a whole to lower the room temperature strength. If it is larger than 0.8, it is difficult to densify and it is difficult to obtain a high-strength sintered body. is there.
【0013】尚、内部の粒界相の状態は、焼結助剤の組
成、焼結条件及び焼結後の熱処理条件により異なるが焼
結体中のSiO2/(R2O3+SiO2)の値が上記範囲
内にある場合はガラス相もしくはR4Si2N2O7あるい
はR2Si2O7の結晶相となる。The state of the internal grain boundary phase differs depending on the composition of the sintering aid, the sintering conditions and the heat treatment conditions after sintering, but SiO 2 / (R 2 O 3 + SiO 2 ) in the sintered body. When the value of) is within the above range, the glass phase or the crystal phase of R 4 Si 2 N 2 O 7 or R 2 Si 2 O 7 is obtained.
【0014】[0014]
【実施例】平均粒径0.6μm、α率97%のSi3N4粉末
に、平均粒径1〜3μmの希土類酸化物及び平均粒径約1
μmのSiO2、V2O5、MoO3及びWO3の各粉末を
表1に示した組成で配合し、窒化珪素製ボールミル中で
湿式混合粉砕した後、乾燥して得られた粉末を55x55x25
mmに4ton/cm2の圧力で静水圧プレス成形し、常圧焼結、
ガス圧焼結及び熱間静水圧加圧あるいはこれらを組み合
わせた焼結法により焼結体を得る。尚、本発明の焼結体
は再加熱処理によっても得ることが可能であるが、この
際の温度は1600〜1800℃の比較的高温であっ
て、更にCOを微量に含む窒素雰囲気中であることが望
ましい。[Examples] Si 3 N 4 powder having an average particle size of 0.6 μm and an α ratio of 97%, a rare earth oxide having an average particle size of 1 to 3 μm and an average particle size of about 1
Each powder SiO 2, V 2 O 5, MoO 3 and WO 3 in μm were blended in the composition shown in Table 1, was wet-mixed by a silicon nitride-made ball mill, the powder obtained by drying 55x55x25
mm at a pressure of 4 ton / cm 2 for isostatic pressing, normal pressure sintering,
A sintered body is obtained by gas pressure sintering and hot isostatic pressing or a sintering method combining these. The sintered body of the present invention can be obtained by a reheating treatment, but the temperature at this time is a relatively high temperature of 1600 to 1800 ° C., and it is in a nitrogen atmosphere containing a slight amount of CO. Is desirable.
【0015】[0015]
【表1】 得られた焼結体の諸特性を表2に示す。表2の特性のう
ち焼結体密度は、アルキメデス法により測定し混合則で
計算した理論密度に対する比で表した。焼結体が含有す
る酸素量は酸素量分析装置により測定し、希土類元素量
はICP発光分析により定量した。粒界相の同定はX線回
折装置を用いて行い、強度はJIS R 1601及びR 1604に従
う四点曲げ試験により測定した。尚、メリライト相の存
在する表層部の厚みは焼結体断面を鏡面研磨した後に電
子顕微鏡観察により決定した。また、粒界相には、焼結
助剤として添加したV、W、Mo等の珪化物(VS
i2、V5Si3、MoSi2、WSi2、W5Si3)や、
これらの固溶体の存在が認められる場合があったが、焼
結体全体に均一であり、省略した。[Table 1] Table 2 shows various characteristics of the obtained sintered body. Among the characteristics shown in Table 2, the density of the sintered body was expressed as a ratio to the theoretical density measured by the Archimedes method and calculated by the mixing rule. The amount of oxygen contained in the sintered body was measured by an oxygen amount analyzer, and the amount of rare earth element was quantified by ICP emission spectrometry. The grain boundary phase was identified using an X-ray diffractometer, and the strength was measured by a four-point bending test according to JIS R 1601 and R 1604. The thickness of the surface layer portion in which the melilite phase was present was determined by electron microscope observation after mirror-polishing the cross section of the sintered body. Further, in the grain boundary phase, a silicide (VS, such as V, W, Mo) added as a sintering aid (VS
i 2 , V 5 Si 3 , MoSi 2 , WSi 2 , W 5 Si 3 ),
The presence of these solid solutions was observed in some cases, but they were omitted because they were uniform throughout the sintered body.
【0016】[0016]
【表2】 表2から明らかなように本発明範囲に属する焼結体によ
れば室温強度(700MPa以上)を損なうことなく且
つ1500℃という高温でも高強度(450MPa以上)を
得ることができる。ただし、No.6は、SiO2/
(R2O3+SiO2)の値が若干過小のため、No.1
〜5に比べて室温強度がやや低くなったと考えられる。
また、No.7は、その値が若干過大のため、密度が低
く高温強度もやや低くなったと考えられる。[Table 2] As is clear from Table 2, according to the sintered body belonging to the scope of the present invention, high strength (450 MPa or more) can be obtained without impairing room temperature strength (700 MPa or more) and at a high temperature of 1500 ° C. However, No. 6 is SiO 2 /
Since the value of (R 2 O 3 + SiO 2 ) is a little too small, No. 1
It is considered that the room temperature strength was slightly lower than that of -5.
In addition, No. It is considered that since the value of No. 7 was slightly excessive, the density was low and the high temperature strength was also slightly low.
【0017】これに対し、No.8〜10の焼結体は表
層部にメリライト相が存在しないため1500℃での強度が
低いものとなっている。すなわち、No.8と10の焼
結体は全体的に単一の結晶相を生じているので室温強度
も低くなっており、NO.9の焼結体は粒界相がガラス
相であるので室温強度は比較的高いものの1500℃強度が
著しく低くなってしまった。No.11は、表層部にメ
リライト相が存在するが、その厚みが10μm未満であ
るので、1500℃での強度が低くなった。逆にNo.
12は、焼結体全体にメリライト相が存在するので(厚
みが500μm以上に相当する)、室温強度が低くなっ
た。On the other hand, No. The sintered bodies of Nos. 8 to 10 have low strength at 1500 ° C because no melilite phase is present in the surface layer. That is, No. Since the sintered bodies of Nos. 8 and 10 produced a single crystal phase as a whole, the room temperature strength was also low, and NO. Since the grain boundary phase of the sintered body of 9 was a glass phase, the room temperature strength was relatively high, but the 1500 ° C. strength was remarkably low. No. In No. 11, the melilite phase was present in the surface layer, but the thickness was less than 10 μm, so the strength at 1500 ° C. was low. Conversely, No.
In No. 12, the room temperature strength was low because the melilite phase was present in the entire sintered body (corresponding to a thickness of 500 μm or more).
【0018】[0018]
【発明の効果】以上の説明から明らかなように、本発明
の結晶構造によれば、室温強度が高く、しかも高温にお
いて強度劣化の少ない、高温構造部材として適した窒化
珪素焼結体を得ることができる。As is clear from the above description, according to the crystal structure of the present invention, it is possible to obtain a silicon nitride sintered body having a high room temperature strength and little strength deterioration at high temperatures, which is suitable as a high temperature structural member. You can
Claims (3)
Si、O及びNを含む粒界相とからなる焼結体におい
て、その表層部にのみメリライト相(R2Si3N4O3)
が存在することを特徴とする窒化珪素焼結体。1. Silicon nitride particles and R (R is a rare earth element),
In a sintered body composed of a grain boundary phase containing Si, O and N, a melilite phase (R 2 Si 3 N 4 O 3 ) is present only in the surface layer portion.
A silicon nitride sintered body characterized by being present.
みが10〜500μmである請求項1に記載の窒化珪素
焼結体。2. The silicon nitride sintered body according to claim 1, wherein the surface layer portion in which the melilite phase is present has a thickness of 10 to 500 μm.
算したモル量と焼結体中の酸素量からR2O3に含まれる
酸素量を差し引いた残りの酸素量をSiO2に換算した
モル量から計算されるSiO2/(R2O3+SiO2)の
値が0.5〜0.8である請求項1又は2に記載の窒化
珪素焼結体。3. The residual oxygen amount obtained by subtracting the oxygen amount contained in R 2 O 3 from the molar amount of the rare earth element in the sintered body converted to R 2 O 3 and the oxygen amount in the sintered body is SiO 2. SiO 2 / (R 2 O 3 + SiO 2) silicon nitride sintered body according to claim 1 or 2 value is 0.5 to 0.8 of which is calculated from the molar amount in terms of 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18295394A JP3212450B2 (en) | 1994-07-11 | 1994-07-11 | Silicon nitride sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18295394A JP3212450B2 (en) | 1994-07-11 | 1994-07-11 | Silicon nitride sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0826829A true JPH0826829A (en) | 1996-01-30 |
| JP3212450B2 JP3212450B2 (en) | 2001-09-25 |
Family
ID=16127241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18295394A Expired - Fee Related JP3212450B2 (en) | 1994-07-11 | 1994-07-11 | Silicon nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3212450B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002526374A (en) * | 1998-10-02 | 2002-08-20 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Manufacturing method of composite material and representative material of this composite material |
| JP2002356376A (en) * | 2001-05-31 | 2002-12-13 | Kyocera Corp | Wiring board and method of manufacturing the same |
-
1994
- 1994-07-11 JP JP18295394A patent/JP3212450B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002526374A (en) * | 1998-10-02 | 2002-08-20 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Manufacturing method of composite material and representative material of this composite material |
| JP4755342B2 (en) * | 1998-10-02 | 2011-08-24 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Manufacturing method of composite material and representative material of this composite material |
| JP2002356376A (en) * | 2001-05-31 | 2002-12-13 | Kyocera Corp | Wiring board and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3212450B2 (en) | 2001-09-25 |
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