JPH0827545A - Giant magnetostrictive material and manufacturing method thereof - Google Patents
Giant magnetostrictive material and manufacturing method thereofInfo
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- JPH0827545A JPH0827545A JP6186674A JP18667494A JPH0827545A JP H0827545 A JPH0827545 A JP H0827545A JP 6186674 A JP6186674 A JP 6186674A JP 18667494 A JP18667494 A JP 18667494A JP H0827545 A JPH0827545 A JP H0827545A
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- temperature
- alloy
- magnetostriction
- giant magnetostrictive
- magnetostrictive material
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、巨大磁気ひずみ材料お
よびその製造方法に係り、特に低磁場域における特性の
優れた巨大磁気ひずみ材料およびその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a giant magnetostrictive material and a method for producing the same, and more particularly to a giant magnetostrictive material having excellent characteristics in a low magnetic field region and a method for producing the same.
【0002】[0002]
【従来の技術】従来使用されている磁気ひずみ材料は、
金属ではNi、合金ではFe−Co−V、フエライトで
はNiCu・Coフエライト等があるが、これらの従来
材料の磁気ひずみは10-6〜10-5程度と非常に小さい
ため、応用上大きく制限されていた。しかしながら、近
年、鉄−希土類系金属間化合物であるFe2Tb,Fe2
Sm合金で室温において、従来材料の約20倍の10-3
台の磁気ひずみを生じる化合物が発見された。巨大磁気
ひずみ材料をマイクロデバイスやアクチュエ−タ−等に
応用する上で求められる磁気特性としては、磁気ひずみ
値が大きいことは勿論のこと、磁化され易く、保磁力が
小さいことが挙げられるが、上記合金系については結晶
磁気異方性が大きいため磁化され難く、単結晶や一方向
凝固材として用いる以外、実用には不向きであった。こ
の結晶磁気異方性を小さくする手段として、合金を非晶
質化する方法と、磁気異方性定数の正負の符号の異なる
化合物を組み合わせる方法、例えば、Fe2TbとFe2
Dyを組み合わせる方法等がある。前者の方法において
は、磁気異方性は大きく減少するが、磁気ひずみも同じ
く大きく減少する。(IEEE、Trans、MAG−
10(1974)、807.)。一方、後者の方法によ
れば、低磁場域の磁気ひずみの増加量はFe2Tb合金
と比較して格段に大きくなる。(例えば、A.E.Cl
ark,Ferromagnetic Materia
ls,Ed.by E.P Whohlfarth,V
ol.1,North−Holland,Amster
dam,(1980),P.531)この他に、磁気異
方性を低減する手段として、結晶粒を微細化する方法が
ある。この方法は、軟磁性合金において、磁気ひずみを
小さくする手段として用いられている。最近、磁気異方
性の大きなFe−Tb−M系(M:Si,Al)、Fe
−Tb−B系、Fe−Tb−Dy−B系においても結晶
粒を微細化することにより、磁気異方性を低減する方法
が報告されている(Sci.Rep.RITU A39
(1994)pp.147−153.,日本応用磁気学
会誌17,267−270(1993):日本金属学会
春期大会講演概要(1993).154)。2. Description of the Related Art Conventionally used magnetostrictive materials are
Ni is used as a metal, Fe-Co-V is used as an alloy, and NiCu.Co ferrite is used as a ferrite. However, since the magnetostriction of these conventional materials is very small at about 10 -6 to 10 -5 , it is greatly limited in application. Was there. However, in recent years, Fe 2 Tb and Fe 2 which are iron-rare earth intermetallic compounds have been used.
At room temperature, Sm alloy is about 20 times 10 -3 that of conventional materials.
A compound has been discovered that produces a table magnetostriction. Magnetic properties required for applying a giant magnetostrictive material to a microdevice, an actuator, etc. include, of course, a large magnetostriction value, easy magnetization, and a small coercive force. The above alloys have a large magnetocrystalline anisotropy and thus are hard to be magnetized, and are not suitable for practical use except for being used as a single crystal or a directionally solidified material. As means for reducing the crystal magnetic anisotropy, a method of amorphizing an alloy and a method of combining compounds having different positive and negative signs of magnetic anisotropy constant, for example, Fe 2 Tb and Fe 2
There is a method of combining Dy. In the former method, magnetic anisotropy is greatly reduced, but magnetostriction is also greatly reduced. (IEEE, Trans, MAG-
10 (1974), 807. ). On the other hand, according to the latter method, the amount of increase in magnetostriction in the low magnetic field region is significantly larger than that in the Fe 2 Tb alloy. (For example, AECl
ark, Ferromagnetic Material
ls, Ed. by E. P Whohfarth, V
ol. 1, North-Holland, Amster
dam, (1980), p. 531) In addition to this, as a means for reducing the magnetic anisotropy, there is a method of refining crystal grains. This method is used as a means for reducing magnetostriction in a soft magnetic alloy. Recently, Fe-Tb-M system (M: Si, Al) having a large magnetic anisotropy, Fe
In the -Tb-B system and the Fe-Tb-Dy-B system, a method of reducing the magnetic anisotropy by refining crystal grains has been reported (Sci. Rep. RITU A39.
(1994) pp. 147-153. , The Japan Society for Applied Magnetics 17, 267-270 (1993): Spring Meeting of the Japan Institute of Metals (1993). 154).
【0003】[0003]
【発明が解決しようとする課題】上記の報告例による
と、組成式(Fe2Tb0.5Dy0.5)100-XBXの試料に
おいては、添加元素であるBを7原子%以上添加するこ
とにより非晶質(アモルファス)が得られるとしてい
る。しかしながら、Bの添加により磁気ひずみの飽和値
が減少するだけでなく、B元素が非常に高価であるた
め、生産コストの面から考えて実用的とは言えなかっ
た。このFe−Tb−Dy系合金は、Fe−Tb系合金
に比べDyの割合が大きくなるに従い、磁気ひずみの飽
和値が小さくなるという問題点があった。また、室温で
磁気異方性が最小となるFe2Tb0.27Dy0.73組成
(原子比)は、磁化容易軸の異なるFe2Tb([11
1])とFe2Dy([100])の凝2元合金であ
り、温度変化によりスピン再配列を起し易く、磁気ひず
み特性が不安定になる問題点があった。本発明は、大き
な磁気異方性をもつFe−Tb−Dy系において、添加
元素Mとして比較的安価なSi又はAlを選択し、添加
元素M(Si又はAlのうち少くとも1元素以上)の添
加量とDyの割合を少なくして、磁気ひずみの飽和値の
低下を抑制すると同時に、結晶粒径の制御により、印加
磁場が小さくとも大きな磁気ひずみを発現させる材料と
その製造方法とを提供することを目的とする。According to the above reported example, in the sample of the composition formula (Fe 2 Tb 0.5 Dy 0.5 ) 100-X B X , the addition element B is added by 7 atomic% or more. It is said that an amorphous material can be obtained. However, addition of B not only reduces the saturation value of magnetostriction but also B element is very expensive, so that it was not practical from the viewpoint of production cost. This Fe-Tb-Dy alloy has a problem that the saturation value of magnetostriction becomes smaller as the ratio of Dy becomes larger than that of the Fe-Tb alloy. Further, the composition (atomic ratio) of Fe 2 Tb 0.27 Dy 0.73 that has the minimum magnetic anisotropy at room temperature is Fe 2 Tb ([11
1]) and Fe 2 Dy ([100]), which are solid binary alloys, tend to cause spin rearrangement due to temperature changes, and have a problem that the magnetostrictive characteristics become unstable. The present invention selects relatively inexpensive Si or Al as the additional element M in the Fe-Tb-Dy system having a large magnetic anisotropy, and selects the additional element M (at least one element of Si or Al). Provided are a material that suppresses a decrease in a saturation value of magnetostriction by reducing a ratio of an additive amount and Dy, and at the same time, exhibits a large magnetostriction even when an applied magnetic field is small by a control of a crystal grain size, and a manufacturing method thereof. The purpose is to
【0004】[0004]
【課題を解決するための手段】本発明の要旨とするとこ
ろは次の如くである。 (1)組成式(FexTb1-yDyy)100-ZMZを有し、
該組成式において、M:Si、Alのうちから選ばれた
1種以上で、かつ、組成各元素の原子比が次の3式を満
足し、 1.8≦x≦2.2 0<y≦0.7 1≦z≦5 更に20nm径以下の微細な結晶粒から成る組織を有す
ることを特徴とする巨大磁気ひずみ材料。 (2)目標組成式を得るためのFe−Tb−Dy−M
(ただしMはSi、Alのうちから選ばれた1種以上)
系原料金属もしくは合金をアルゴン雰囲気中で溶解しノ
ズルを介して回転するロ−ル面上に射出して急速凝固せ
しめる液体急冷法により製造した非晶質合金もしくは微
細結晶を含む合金を該合金の結晶化温度Tx近傍の温度
で熱処理することを特徴とする巨大磁気ひずみ材料の製
造方法。 (3)前記液体急冷法による急冷速度を射出する回転ロ
−ルの周速度を制御することにより非晶質を経由せず直
接20nm径以下の微細な結晶粒組織を生成させる上記
(2)に記載の巨大磁気ひずみ材料の製造方法。 (4)前記熱処理温度は前記急冷体の昇温温度40℃/
minで測定した結晶化温度Txで行うことを最善と
し、少くともTxを中心として−50℃〜+50℃の範
囲の温度で行う上記(2)もしくは(3)に記載の巨大
磁気ひずみ材料の製造方法。The gist of the present invention is as follows. (1) having a composition formula (Fe x Tb 1-y Dy y ) 100-Z M Z ,
In the composition formula, at least one selected from M: Si and Al, and the atomic ratio of each element in the composition satisfies the following three formulas, and 1.8 ≦ x ≦ 2.20 <y ≤0.7 1 ≤z≤5 Further, a giant magnetostrictive material having a structure composed of fine crystal grains having a diameter of 20 nm or less. (2) Fe-Tb-Dy-M for obtaining the target composition formula
(However, M is one or more selected from Si and Al)
An amorphous alloy or an alloy containing fine crystals produced by a liquid quenching method in which a system raw material metal or alloy is melted in an argon atmosphere and is injected through a nozzle onto a rotating roll surface to rapidly solidify A method of manufacturing a giant magnetostrictive material, characterized by performing a heat treatment at a temperature near a crystallization temperature Tx. (3) In the above (2), a fine crystal grain structure having a diameter of 20 nm or less is directly generated without passing through an amorphous material by controlling the peripheral speed of a rotary roll for injecting a quenching speed by the liquid quenching method. A method for producing the giant magnetostrictive material described. (4) The heat treatment temperature is 40 ° C /
The production of the giant magnetostrictive material according to (2) or (3) above, which is best performed at the crystallization temperature Tx measured in min, and at least at a temperature in the range of -50 ° C to + 50 ° C centered on Tx. Method.
【0005】以下に本発明の詳細を説明する。本発明の
合金組成は、鉄(Fe)を基とし、テリビウム(T
b),ジスプロシウム(Dy)と添加元素Mから構成さ
れるものである。FeとTbおよびDyの比は、Fe2
R(R:TbおよびDy)の化合物が、最大の磁気ひず
みを示すことから、1.8≦Fe/(Tb+Dy)≦
2.2とすることが好ましい。Fe/(Tb+Dy)の
原子比が1.8未満または2.2より大きい場合、磁気
ひずみが小さくなるため、1.8以上、2.2以下の原
子比が好ましい。上記組成式で、Dyの割合が0.7<
yの領域では、温度変化によりスピン再配列を起こし易
く、磁気ひずみ特性が不安定になる。また磁気ひずみも
小さくなる。それ故、Dyの置換量yは、0<y≦0.
7とするのが好ましい。The present invention will be described in detail below. The alloy composition of the present invention is based on iron (Fe) and contains terbium (T).
b), dysprosium (Dy) and additional element M. The ratio of Fe to Tb and Dy is Fe 2
Since the compound of R (R: Tb and Dy) exhibits the maximum magnetostriction, 1.8 ≦ Fe / (Tb + Dy) ≦
It is preferably set to 2.2. When the atomic ratio of Fe / (Tb + Dy) is less than 1.8 or more than 2.2, the magnetostriction becomes small, so the atomic ratio of 1.8 or more and 2.2 or less is preferable. In the above composition formula, the ratio of Dy is 0.7 <
In the y region, spin rearrangement is likely to occur due to temperature change, and the magnetostriction characteristic becomes unstable. Also, the magnetostriction becomes small. Therefore, the substitution amount y of Dy is 0 <y ≦ 0.
7 is preferable.
【0006】添加元素Mは、Si又はAlのうちから選
ばれた少なくとも1種以上の元素であり、非晶質合金を
得るために添加されるものである。また、添加元素M
は、Fe2R(R:TbおよびDy)化合物の結晶粒径
を20nm径以下に制御するためにも必要である。一
方、冷却速度を制御して、アモルファスを得ずに直接結
晶化させる場合も、添加元素Mは、結晶粒を20nm径
以下に制御する働きがある。結晶粒が20nm径を越え
て粗大化すると、磁気異方性となり保磁力が大きくな
り、低磁場域での磁気ひずみの特性が劣化する。そのた
め、実用上、結晶粒径を20nm径以下に制御する必要
がある。なお、磁気ひずみは3端子静電容量法、保磁力
はVSM、結晶粒径は透過型電子顕微鏡によって測定し
た。The additional element M is at least one element selected from Si or Al and is added to obtain an amorphous alloy. In addition, the additional element M
Is also necessary for controlling the crystal grain size of the Fe 2 R (R: Tb and Dy) compound to be 20 nm or less. On the other hand, when the cooling rate is controlled to directly crystallize without obtaining the amorphous substance, the additional element M also has a function of controlling the crystal grains to have a diameter of 20 nm or less. If the crystal grains become coarser than the diameter of 20 nm, they become magnetic anisotropy to increase the coercive force and deteriorate the characteristics of magnetostriction in the low magnetic field region. Therefore, in practice, it is necessary to control the crystal grain size to 20 nm or less. The magnetostriction was measured by a three-terminal capacitance method, the coercive force was measured by VSM, and the crystal grain size was measured by a transmission electron microscope.
【0007】添加元素Mの添加量は、1原子%未満であ
るとアモルファス合金又は微細結晶を含む合金を製造す
ることが困難であり、また、5原子%より過剰に添加す
ると磁気ひずみ値の大幅な低下を招くことから、好まし
くは1原子%以上、5原子%以下とすることが良い。従
って1≦z≦5と限定した。熱処理温度は、急冷体の昇
温温度40deg/minで測定した結晶化温度Txに
対し、−50℃〜+50℃の範囲の温度で行うことと
し、特に、結晶化温度Txで熱処理を行うことにより最
も良い特性が得られることが判明した。熱処理温度は1
0分から10時間程度とする。熱処理温度は、低すぎる
と結晶質合金が得られず、また、熱処理温度が高すぎる
と、結晶粒が粗大化して磁気ひずみ特性の低下を招く。
熱処理雰囲気は、真空中、不活性ガス中のどちらでもよ
い。If the addition amount of the additional element M is less than 1 atom%, it is difficult to produce an amorphous alloy or an alloy containing fine crystals, and if it is added in excess of 5 atom%, the magnetostriction value becomes large. Therefore, it is preferable that the content be 1 atomic% or more and 5 atomic% or less. Therefore, it is limited to 1 ≦ z ≦ 5. The heat treatment temperature is -50 ° C. to + 50 ° C. with respect to the crystallization temperature Tx measured at a temperature rise temperature of 40 deg / min of the quenched body, and particularly, the heat treatment is performed at the crystallization temperature Tx. It was found that the best characteristics were obtained. Heat treatment temperature is 1
The time is from 0 minutes to 10 hours. If the heat treatment temperature is too low, a crystalline alloy cannot be obtained, and if the heat treatment temperature is too high, the crystal grains become coarse and the magnetostrictive properties deteriorate.
The heat treatment atmosphere may be either in vacuum or in an inert gas.
【0008】[0008]
【実施例】次の実施例により、本発明を更に詳細に説明
する。The present invention will be described in more detail with reference to the following examples.
【実施例1】アルゴン雰囲気中、単ロ−ル液体急冷法に
より、ロ−ルの周速32m/secの条件で幅1mm、
厚さ20μmの組成式(Fe2Tb0.5Dy0.5)97.5S
i2.5の原子比のアモルファス薄帯を作製した。図1
に、アモルファスの試料、結晶化温度Tx=563℃よ
り70℃低温側の493℃で熱処理した試料、結晶化温
度Tx=563℃で熱処理した試料、そして結晶化温度
より70℃高温側の633℃で熱処理した試料の印加磁
場に対する磁気ひずみの変化を示す。熱処理を行った試
料は、結晶化による磁気ひずみの増加が確認された。特
に、結晶化温度Txで熱処理を行った試料は、低磁場側
の30〜50kA/mで磁気ひずみの急激な増加が見ら
れ、240kA/mの印加磁場においても627× 1
/106の磁気ひずみ値が得られた。透過型電子顕微鏡
による組織観察の結果、10〜20nm径の微細な結晶
粒集合体からなることが分かった。しかしながら、熱処
理温度が結晶化温度より高すぎると結晶粒が粗大化し、
低磁場域の磁気ひずみ特性が劣化する。一方、熱処理温
度が、結晶化温度より低すぎると、結晶化が進行せず、
大きな磁気ひずみを得られない。Example 1 In an argon atmosphere, a single roll liquid quenching method was used to obtain a width of 1 mm at a roll peripheral speed of 32 m / sec.
Composition formula (Fe 2 Tb 0.5 Dy 0.5 ) 97.5 S with a thickness of 20 μm
An amorphous ribbon having an atomic ratio of i 2.5 was prepared. FIG.
In addition, an amorphous sample, a sample heat-treated at 493 ° C., which is 70 ° C. lower than the crystallization temperature Tx = 563 ° C., a sample heat-treated at crystallization temperature Tx = 563 ° C., and 633 ° C. 70 ° C. higher than the crystallization temperature. The change of the magnetostriction with respect to the applied magnetic field of the sample heat-treated at. An increase in magnetostriction due to crystallization was confirmed in the heat-treated sample. In particular, in the sample heat-treated at the crystallization temperature Tx, a rapid increase in magnetostriction was observed at 30 to 50 kA / m on the low magnetic field side, and 627 × 1 even at an applied magnetic field of 240 kA / m.
A magnetostriction value of / 10 6 was obtained. As a result of observing the structure with a transmission electron microscope, it was found to be composed of fine crystal grain aggregates having a diameter of 10 to 20 nm. However, if the heat treatment temperature is higher than the crystallization temperature, the crystal grains become coarse,
The magnetostriction characteristic in the low magnetic field region deteriorates. On the other hand, if the heat treatment temperature is too lower than the crystallization temperature, crystallization does not proceed,
Cannot get large magnetostriction.
【0009】表1に、熱処理温度の差異による低磁場域
の磁気ひずみ値と保磁力の値を示す。Table 1 shows the values of magnetostriction and coercive force in the low magnetic field region due to the difference in heat treatment temperature.
【表1】 熱処理温度が、513〜613℃の範囲で行った試料に
おいて低磁場域の磁気ひずみ特性の優れた磁気ひずみ材
料が得られた。特に、結晶化温度Tx=563℃で熱処
理を行った試料は最も保磁力が低く、磁気ひずみ特性も
優れていた。またTx=563℃から−70℃の493
℃および+70℃の633℃で熱処理した試料は、それ
ぞれ−50℃の513℃および+50℃の613℃で熱
処理した試料よりも保磁力が著しく高く、磁気ひずみ特
性も劣ることが判明した。従って、結晶化温度Txで熱
処理を行うことを最善とし、少くともTxを中心として
−50℃〜+50℃の範囲の温度で熱処理すべきである
ことが判明した。[Table 1] A magnetostrictive material having excellent magnetostrictive characteristics in a low magnetic field region was obtained in a sample heat-treated at a temperature of 513 to 613 ° C. In particular, the sample heat-treated at the crystallization temperature Tx = 563 ° C. had the lowest coercive force and the excellent magnetostriction characteristic. Also, Tx = 563 ° C. to −70 ° C. 493
It was found that the samples heat-treated at 633 ° C. of + 70 ° C. and + 70 ° C. had significantly higher coercive force and were inferior in magnetostriction characteristics than the samples heat-treated at 513 ° C. of −50 ° C. and 613 ° C. of + 50 ° C., respectively. Therefore, it was found that it is best to perform the heat treatment at the crystallization temperature Tx, and the heat treatment should be performed at a temperature in the range of -50 ° C to + 50 ° C centering on Tx.
【0010】[0010]
【実施例2〜9】アルゴン雰囲気中、単ロ−ル液体急冷
法により、ロ−ルの周速32m/secの条件で幅1m
m、厚さ20μmの組成式(Fe2Tb1-yDyy)100-z
Mzの原子比の非晶質または微細結晶を含む薄帯を作製
した。なお、z=2.5原子%の時、y=0.7の組成
においては、非晶質組織中に僅かであるが微細結晶を含
んでおり、Dyの割合が増加するに従い、非晶質組織が
得られ難くなる。また、Si,Alいずれかの添加元素
の場合についても、アモルファス形成能の大差は見られ
なかった。表2〜表5に、それぞれ印加磁場50,10
0,240(kA/m)における結晶化温度Txで熱処
理した試料の磁気ひずみの値を示す。[Examples 2 to 9] Width of 1 m at a peripheral speed of the roll of 32 m / sec by a single roll liquid quenching method in an argon atmosphere.
m, composition formula (Fe 2 Tb 1-y Dy y ) 100-z with a thickness of 20 μm
A ribbon containing an amorphous or fine crystal having an atomic ratio of M z was prepared. It should be noted that when z = 2.5 atomic%, the composition of y = 0.7 contains a small amount of fine crystals in the amorphous structure, and as the ratio of Dy increases, the amorphous structure becomes amorphous. It becomes difficult to obtain an organization. Also, no significant difference was observed in the amorphous forming ability in the case of using either Si or Al as the additive element. Tables 2 to 5 show the applied magnetic fields 50 and 10 respectively.
The value of magnetostriction of the sample heat-treated at the crystallization temperature Tx at 0,240 (kA / m) is shown.
【0011】[0011]
【表2】 [Table 2]
【0012】[0012]
【表3】 [Table 3]
【0013】[0013]
【表4】 [Table 4]
【0014】[0014]
【表5】 [Table 5]
【0015】なお表2〜表5の実施例の材料およびy=
0の組成のものについては、20nm径以下に結晶粒を
制御されており、参考例の結晶粒が制御されていないF
e2Tbと比較して、〜100kA/mの印加磁場領域
で磁気ひずみの大幅な増加が見られる。実施例2〜9の
結果より、添加元素がSi,Alいずれの場合において
も、Dyの置換量の増加に伴い、240kA/mでの磁
気ひずみは、減少する傾向にある。しかしながら、低磁
場領域の印加磁場においては、参考例のアモルファス材
と比較しても遜色ない優れた磁気ひずみ特性を示してい
る。また、実施例2〜9の試料においても、実施例1と
同様に、熱処理を結晶化温度Txに対し、−50℃〜+
50℃の範囲の温度で行なったが、結晶化温度で熱処理
したものと比較して、僅かに特性は劣るものの、優れた
特性が得られた。The materials of the examples in Tables 2 to 5 and y =
Regarding the composition of 0, the crystal grains are controlled to have a diameter of 20 nm or less, and the crystal grains of the reference example are not controlled F
Compared to e 2 Tb, a significant increase in magnetostriction is observed at an applied magnetic field region of ~100kA / m. From the results of Examples 2 to 9, the magnetostriction at 240 kA / m tends to decrease with an increase in the substitution amount of Dy regardless of whether the additive element is Si or Al. However, in the applied magnetic field in the low magnetic field region, it exhibits excellent magnetostriction characteristics comparable to the amorphous material of the reference example. Moreover, also in the samples of Examples 2 to 9, as in Example 1, the heat treatment was performed at −50 ° C. to + with respect to the crystallization temperature Tx.
It was carried out at a temperature in the range of 50 ° C., but excellent characteristics were obtained although the characteristics were slightly inferior to those obtained by heat treatment at the crystallization temperature.
【0016】添加元素Mの添加量を1原子%未満とした
場合、アモルファス又は微細結晶を含む薄帯を得ること
が困難となり、結晶粒を均一に20nm以下に制御する
ことができなくなる。それ故、低磁場領域の磁気ひずみ
特性が劣化する。しかし、添加元素Mの添加量を1原子
%未満としても、さらに冷却速度を上げることにより、
アモルファス合金又は微細結晶を含む合金を製造するこ
とは可能であると考える。If the addition amount of the additional element M is less than 1 atomic%, it becomes difficult to obtain a ribbon containing amorphous or fine crystals, and it becomes impossible to uniformly control the crystal grains to 20 nm or less. Therefore, the magnetostriction characteristic in the low magnetic field region is deteriorated. However, even if the addition amount of the additional element M is less than 1 atom%, by further increasing the cooling rate,
It is believed possible to produce amorphous alloys or alloys containing fine crystals.
【0017】[0017]
【実施例10】アルゴン雰囲気中、単ロ−ル液体急冷法
により、ロ−ルの周速を10〜21m/secに制御し
た条件で幅1mm、厚さ20μmの組成式(Fe2Tb
0.75Dy0.25)97.5Si2.5の原子比の急冷薄帯を作製
した。ロ−ルの周速21m/secの急冷速度で作製し
た急冷薄帯はアモルファス相の中に10nm以下の微細
な結晶粒組織を含んでいる。一方、16m/secおよ
び21m/secの周速で作製した薄帯は、どちらも結
晶質であり、周速の低下により結晶組織は粗大化する傾
向がある。しかし、周速を10m/sec以上の条件で
行うことにより、20nm径以下の微細結晶が生成する
ことが確認された。表6に、印加磁場の強さがそれぞれ
50,100,240kA/mにおけるロ−ル周速の差
異による磁気ひずみ値の変化の一例を示す。[Embodiment 10] A composition formula (Fe 2 Tb) having a width of 1 mm and a thickness of 20 μm under the condition that the peripheral speed of the roll was controlled to 10 to 21 m / sec by a single roll liquid quenching method in an argon atmosphere.
A quenched ribbon having an atomic ratio of 0.75 Dy 0.25 ) 97.5 Si 2.5 was prepared. The quenched ribbon produced at a quenching speed of 21 m / sec of the peripheral speed of the roll contains a fine grain structure of 10 nm or less in the amorphous phase. On the other hand, the thin ribbons produced at the peripheral speeds of 16 m / sec and 21 m / sec are both crystalline, and the crystal structure tends to become coarse due to the decrease in the peripheral speed. However, it was confirmed that fine crystals having a diameter of 20 nm or less are generated by performing the peripheral speed at 10 m / sec or more. Table 6 shows an example of the change in magnetostriction value due to the difference in roll peripheral speed when the applied magnetic field strength is 50, 100, and 240 kA / m, respectively.
【0018】[0018]
【表6】 [Table 6]
【0019】実施例2の同一組成と比較して、印加磁場
50kA/mにおける磁気ひずみは、10〜15m/s
ecの周速条件において、僅かに劣るものの、100,
240kA/mの印加磁場に至っては、ほぼ同等の磁気
ひずみ値を示した。また、ロ−ルの周速を21m/se
cとした場合、50kA/mの印加磁場での磁気ひずみ
は、著しく優れていた。さらにロ−ルの周速を32m/
secとすると、アモルファスとなるため、磁気ひずみ
は減少する。この結果より、急冷条件を制御すること
で、任意の磁気ひずみ特性を得ることができ、実施例1
〜9と同様に磁気ひずみ特性の優れた材料が得られる。
実施例1〜9と同様に、添加元素Mの添加量を1原子%
未満とした場合、結晶粒を20nm径以下に制御できな
くなり、低磁場域の磁気ひずみ特性の低下を招く。しか
し、添加元素Mの添加量を1原子%未満としても、さら
に冷却速度を上げることにより、結晶粒を20nm径以
下に制御できれば、さらに磁気ひずみ値の大きな材料が
得られるであろう。なお、上記実施例の急冷方法は、単
ロ−ル法とは限らない。Compared with the same composition as in Example 2, the magnetostriction at an applied magnetic field of 50 kA / m is 10 to 15 m / s.
In the peripheral speed condition of ec, although slightly inferior, 100,
At an applied magnetic field of 240 kA / m, the magnetostriction value was almost the same. In addition, the peripheral speed of the roll is 21 m / se
In the case of c, the magnetostriction under an applied magnetic field of 50 kA / m was remarkably excellent. Furthermore, the peripheral speed of the roll is 32 m /
When it is set to sec, it becomes amorphous and the magnetostriction is reduced. From this result, it is possible to obtain an arbitrary magnetostriction characteristic by controlling the quenching condition.
A material having excellent magnetostrictive properties can be obtained as in the case of
In the same manner as in Examples 1 to 9, the addition amount of the additional element M is 1 atomic%.
If it is less than the range, the crystal grains cannot be controlled to have a diameter of 20 nm or less, and the magnetostriction characteristic in the low magnetic field region is deteriorated. However, even if the addition amount of the additional element M is less than 1 atomic%, if the crystal grain can be controlled to have a diameter of 20 nm or less by further increasing the cooling rate, a material having a larger magnetostriction value will be obtained. The quenching method of the above embodiment is not limited to the single roll method.
【0020】[0020]
【発明の効果】本発明による巨大磁気ひずみ材料は、F
e−Tb−Dy−M(ただしMはSi−Alのうちから
選ばれた一種以上の元素)系合金であって、組成式(F
exTb1-yDyy)100-zMzを有し、かつ組成各元素の
原子比が次の3式を満足し、 1.8≦x≦2.2 0<y≦0.7 1≦z≦5 更に20nm径以下の微細な結晶粒から成る組成を有す
る合金である。しかして、その製造方法は原料金属もし
くは合金をアルゴン雰囲気中で溶解しノズルを介して回
転するロ−ル面上に射出して急速冷却せしめる、いわゆ
る液体急冷法によって非晶質合金もしくは微細結晶を含
む合金を製造し、該合金の結晶化温度Txもしくはその
近傍の−50℃≦Tx≦+50℃の温度範囲で熱処理を
行うことによって製造されるが、本発明の材料は、従来
材料の約20倍の10-3台の磁気ひずみ材料であって、
磁気異方性が小さく磁化され易く、かつ保磁力が小さ
く、印加磁場が小さくとも巨大な磁気ひずみ量が得られ
るので、マイクロデバイスやアクチエ−タ−等に適応で
きる優れた磁気特性を有する。The giant magnetostrictive material according to the present invention is F
An e-Tb-Dy-M (where M is one or more elements selected from Si-Al) alloy, and has a composition formula (F
e x Tb 1-y Dy y ) 100-z M z , and the atomic ratio of each element of the composition satisfies the following three formulas: 1.8 ≦ x ≦ 2.2 0 <y ≦ 0.7 1 ≦ z ≦ 5 Further, it is an alloy having a composition composed of fine crystal grains having a diameter of 20 nm or less. Therefore, the manufacturing method is to melt the raw material metal or alloy in an argon atmosphere and inject it onto a rotating roll surface through a nozzle to rapidly cool it. It is produced by producing an alloy containing the alloy and subjecting it to a heat treatment at a crystallization temperature Tx of the alloy or in the vicinity thereof at a temperature range of −50 ° C. ≦ Tx ≦ + 50 ° C. 10 -3 times as many magnetostrictive materials,
Since it has a small magnetic anisotropy, is easily magnetized, has a small coercive force, and has a large amount of magnetostriction even when the applied magnetic field is small, it has excellent magnetic characteristics applicable to microdevices, actuators and the like.
【図1】 本発明による実施例のアモルファス合金にお
ける、該アモルファス合金を結晶化温度を中心とする様
々な温度で熱処理した時の異なる印加磁場に対する磁気
ひずみの変化を示した線図である。FIG. 1 is a diagram showing a change in magnetostriction with respect to different applied magnetic fields when an amorphous alloy of an example according to the present invention is heat-treated at various temperatures around a crystallization temperature.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 井上 明久 宮城県仙台市青葉区川内無番地川内住宅11 −806 (72)発明者 増本 健 宮城県仙台市青葉区上杉3丁目8番22号 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Akihisa Inoue Kawauchi Muzen, Aoba-ku, Sendai-shi, Miyagi 11-806 (72) Inventor Ken Masumoto 3-8-22, Uesugi, Aoba-ku, Sendai-shi, Miyagi
Claims (4)
を有し、該組成式において、 M:Si、Alのうちから選ばれた1種以上で、かつ、
組成各元素の原子比が次の3式を満足し、 1.8≦x≦2.2 0<y≦0.7 1≦z≦5 更に20nm径以下の微細な結晶粒から成る組織を有す
ることを特徴とする巨大磁気ひずみ材料。1. A composition formula (Fe x Tb 1-y Dy y ) 100-Z M Z
And in the composition formula, M: one or more selected from Si and Al, and
The atomic ratio of each element of the composition satisfies the following three formulas, and 1.8 ≤ x ≤ 2.2 0 <y ≤ 0.7 1 ≤ z ≤ 5 Further, it has a structure composed of fine crystal grains with a diameter of 20 nm or less. A giant magnetostrictive material characterized in that
y−M(ただしMはSi、Alのうちから選ばれた1種
以上)系原料金属もしくは合金をアルゴン雰囲気中で溶
解しノズルを介して回転するロ−ル面上に射出して急速
凝固せしめる液体急冷法により製造した非晶質合金もし
くは微細結晶を含む合金を該合金の結晶化温度Tx近傍
の温度で熱処理することを特徴とする巨大磁気ひずみ材
料の製造方法。2. Fe-Tb-D for obtaining a target composition formula
y-M (where M is at least one selected from Si and Al) -based raw material metal or alloy is melted in an argon atmosphere and injected through a nozzle onto a rotating roll surface for rapid solidification. A method for producing a giant magnetostrictive material, characterized in that an amorphous alloy or an alloy containing fine crystals produced by a liquid quenching method is heat-treated at a temperature near the crystallization temperature Tx of the alloy.
る回転ロ−ルの周速度を制御することにより非晶質を経
由せず直接20nm径以下の微細な結晶粒組織を生成さ
せる請求項2に記載の巨大磁気ひずみ材料の製造方法。3. A fine crystal grain structure having a diameter of 20 nm or less is directly generated without passing through an amorphous material by controlling the peripheral speed of a rotary roll for injecting a quenching speed by the liquid quenching method. A method for manufacturing a giant magnetostrictive material according to.
40℃/minで測定した結晶化温度Txで行うことを
最善とし、少くともTxを中心として−50℃〜+50
℃の範囲の温度で行う請求項2もしくは請求項3に記載
の巨大磁気ひずみ材料の製造方法。4. The heat treatment temperature is best performed at a crystallization temperature Tx measured at a temperature rise temperature of the quenching body of 40 ° C./min, and at least -50 ° C. to +50 centering on Tx.
The method for producing a giant magnetostrictive material according to claim 2 or 3, which is performed at a temperature in the range of ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6186674A JPH0827545A (en) | 1994-07-15 | 1994-07-15 | Giant magnetostrictive material and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6186674A JPH0827545A (en) | 1994-07-15 | 1994-07-15 | Giant magnetostrictive material and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0827545A true JPH0827545A (en) | 1996-01-30 |
Family
ID=16192674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6186674A Pending JPH0827545A (en) | 1994-07-15 | 1994-07-15 | Giant magnetostrictive material and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0827545A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6312530B1 (en) | 1997-10-23 | 2001-11-06 | Alps Electric Co., Ltd. | Magnetostrictive material |
| CN1296505C (en) * | 2003-09-30 | 2007-01-24 | 包头稀土研究院 | Method for preparing rare-earth magnetostriction material from rare-earth intermediate alloy |
-
1994
- 1994-07-15 JP JP6186674A patent/JPH0827545A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6312530B1 (en) | 1997-10-23 | 2001-11-06 | Alps Electric Co., Ltd. | Magnetostrictive material |
| CN1296505C (en) * | 2003-09-30 | 2007-01-24 | 包头稀土研究院 | Method for preparing rare-earth magnetostriction material from rare-earth intermediate alloy |
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