JPH08298018A - Conductive paste - Google Patents
Conductive pasteInfo
- Publication number
- JPH08298018A JPH08298018A JP10271095A JP10271095A JPH08298018A JP H08298018 A JPH08298018 A JP H08298018A JP 10271095 A JP10271095 A JP 10271095A JP 10271095 A JP10271095 A JP 10271095A JP H08298018 A JPH08298018 A JP H08298018A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- conductive paste
- conductive
- film
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Conductive Materials (AREA)
- Glass Compositions (AREA)
- Ceramic Capacitors (AREA)
Abstract
(57)【要約】
【構成】 70〜98重量%のAg粉末と0〜28重量%のP
d粉末と2〜11重量%のガラスフリットとから成る導電
性ペーストであり、そのガラスフリットの組成成分が15
〜40重量%のPbOと40〜70重量%のBi2 O3 と0〜
15重量%のSiO2 と0〜20重量%のB2 O3 と5〜10
重量%のIn2 O3 とから成る。
【効果】 誘電体磁器等の基体との接着強度が強い導電
膜が得られ、外部からの応力による膜剥がれが発生せ
ず、外観形状が良好で耐メッキ性や耐半田性にも優れた
導電膜が得られる。特に積層磁器コンデンサの端子電極
形成に好適なものとなる。(57) [Summary] [Structure] 70-98% by weight of Ag powder and 0-28% by weight of P
d is a conductive paste composed of 2 to 11% by weight of glass frit, and the composition of the glass frit is 15
-40 wt% PbO and 40-70 wt% Bi 2 O 3 and 0
15 wt% SiO 2 and 0-20 wt% B 2 O 3 and 5-10
It consists of wt% In 2 O 3 . [Effect] A conductive film that has a strong adhesive strength to a substrate such as a dielectric porcelain, does not peel off due to external stress, has a good external appearance, and has excellent plating resistance and solder resistance. A film is obtained. In particular, it is suitable for forming a terminal electrode of a laminated ceramic capacitor.
Description
【0001】[0001]
【産業上の利用分野】本発明は導電性ペーストに関し、
詳しくは積層磁器コンデンサの端子電極材料などに用い
られる、磁器との接着強度を改善した導電性ペーストに
関するものである。The present invention relates to a conductive paste,
More specifically, the present invention relates to a conductive paste that is used as a material for a terminal electrode of a laminated ceramic capacitor and has improved adhesive strength with a ceramic.
【0002】[0002]
【従来の技術】導電性ペーストは、例えば積層磁器(セ
ラミック)コンデンサの内部電極や端子電極、あるいは
ガラスやセラミック等の基板上に形成される導電回路の
導電膜の形成等に広く使用されており、これを所望の箇
所に印刷等の方法により塗布し、乾燥した後に焼成等の
方法により焼き付けることにより、導電膜を形成するも
のである。2. Description of the Related Art Conductive pastes are widely used, for example, for forming internal electrodes and terminal electrodes of laminated porcelain (ceramic) capacitors, or for forming conductive films of conductive circuits formed on substrates such as glass and ceramics. The conductive film is formed by applying it to a desired portion by a method such as printing, drying it, and then baking it by a method such as firing.
【0003】この様な導電性ペーストは、例えば銀(A
g)・金(Au)・白金(Pt)・パラジウム(Pd)
・ニッケル(Ni)・銅(Cu)・亜鉛(Zn)等のい
ずれか、またはこれらを混合あるいは合金化した金属粉
末を、有機バインダ樹脂を有機溶剤に溶解してなる有機
ビヒクルに分散させたものであり、その他必要に応じて
種々の分散剤等の添加剤や各種のガラスフリット等が添
加されている。Such a conductive paste is, for example, silver (A
g) ・ Gold (Au) ・ Platinum (Pt) ・ Palladium (Pd)
-Nickel (Ni) -copper (Cu) -zinc (Zn), etc., or metal powder mixed or alloyed with these, dispersed in an organic vehicle prepared by dissolving an organic binder resin in an organic solvent. In addition, additives such as various dispersants and various glass frits are added as necessary.
【0004】またそのようなガラスフリットには、ケイ
酸鉛系ガラスやホウケイ酸鉛系ガラス・ホウケイ酸ビス
マス系ガラス・ホウケイ酸亜鉛系ガラス・ホウ酸カドミ
ウム径ガラス等が用いられている。As such glass frit, lead silicate glass, lead borosilicate glass, bismuth borosilicate glass, zinc borosilicate glass, cadmium borate glass, etc. are used.
【0005】導電性ペーストを用いて積層磁器コンデン
サの端子電極を形成する場合、その導電性ペーストによ
り形成される導電膜には、その特性として良好な導電性
の他に導電膜の外観形状が良好であること、誘電体磁器
との接着力が強いこと、ならびにその導電膜上に電解メ
ッキを施す際の耐メッキ性が良好であることが要求され
る。また焼成後の電極膜にボイドなどの欠陥が無く、メ
ッキ液に対する封止性が良いことも要求される。When the terminal electrode of the laminated ceramic capacitor is formed by using the conductive paste, the conductive film formed by the conductive paste has a good conductivity as well as a good external appearance of the conductive film. It is required that the adhesive strength with the dielectric ceramic is strong, and that the conductive film has good plating resistance when electrolytically plating. Further, it is also required that the electrode film after firing has no defects such as voids and has a good sealing property with respect to the plating solution.
【0006】従来、積層磁器コンデンサの端子電極形成
用の導電性ペーストには、Agの微粉末と、PbOが50
〜80重量%、B2 O3 が10〜20重量%、SiO2 が5〜
15重量%、ZnOが1〜10重量%の組成から成る低融点
のホウケイ酸鉛系ガラスフリットとを有機ビヒクルに分
散して成る銀ペーストが使用されていた。Conventionally, a conductive paste for forming a terminal electrode of a laminated porcelain capacitor contains Ag fine powder and PbO 50.
80 wt%, B 2 O 3 is 10 to 20 wt%, SiO 2 is 5
A silver paste prepared by dispersing a low melting point lead borosilicate glass frit having a composition of 15% by weight and ZnO of 1 to 10% by weight in an organic vehicle has been used.
【0007】また特開昭58−11565 号公報には、貴金属
粉末と、アルカリ金属およびアルカリ土類金属を含有す
るホウケイ酸亜鉛系ガラスフリット1〜30重量%とを、
不活性有機質ビヒクルに分散させて成る導電性ペースト
が提案されている。そのガラスフリットの組成は、Zn
Oが30〜55重量%、B2 O3 が25〜45重量%、SiO2
が5〜15重量%、Li2 OとNa2 OとK2 Oのうち少
なくとも一種が1〜10重量%、MgOとCaOとBaO
のうち少なくとも一種が2〜20重量%、さらにCdOが
2〜8重量%、SnO2 が2〜10重量%から成るものが
開示されている。それによれば、そのペーストを焼き付
けて形成した導電被膜の表面に電解メッキ法により金属
被膜処理を行なっても劣化せず、接着強度が何等損なわ
れないというものである。Further, JP-A-58-11565 discloses a noble metal powder and 1 to 30% by weight of a zinc borosilicate glass frit containing an alkali metal and an alkaline earth metal.
A conductive paste has been proposed which is dispersed in an inert organic vehicle. The composition of the glass frit is Zn
O is 30 to 55% by weight, B 2 O 3 is 25 to 45% by weight, SiO 2
5 to 15% by weight, at least one of Li 2 O, Na 2 O and K 2 O is 1 to 10% by weight, MgO, CaO and BaO
It is disclosed that at least one of them is 2 to 20% by weight, CdO is 2 to 8% by weight, and SnO 2 is 2 to 10% by weight. According to this, even if the surface of the conductive coating formed by baking the paste is subjected to a metal coating treatment by an electrolytic plating method, it is not deteriorated and the adhesive strength is not impaired.
【0008】また特開昭62−237605号公報には、パラジ
ウムおよび銀を主成分とし、これにガラス成分と金属酸
化物とを含有する厚膜ペーストが提案されており、その
ガラス成分がPbを含まないZnO−B2 O3 系のもの
であり、パラジウムおよび銀100重量部に対して1〜6
重量部含まれることが開示されている。それによれば、
窒化アルミニウム焼結体基体等の非酸化物系絶縁基体と
の接着強度の信頼性を高めることができ、特に高温中で
接着強度の劣化を抑制することが可能になるというもの
である。Further, Japanese Patent Application Laid-Open No. 62-237605 proposes a thick film paste containing palladium and silver as main components, and a glass component and a metal oxide therein, and the glass component contains Pb. It is a ZnO-B 2 O 3 -based material that does not contain, and is 1 to 6 per 100 parts by weight of palladium and silver.
It is disclosed that parts by weight are included. According to it
The reliability of the adhesive strength with a non-oxide insulating base such as an aluminum nitride sintered base can be enhanced, and deterioration of the adhesive strength can be suppressed especially at high temperatures.
【0009】さらに特公平5−14363 号公報には、銀粉
末を導電性付与成分として有機分散媒中に分散させる銀
系導電ペーストにおいて、この銀系導電ペースト中に、
Bi2 O3 粉末を4重量%以下、CuO粉末を0.05〜0.
6 重量%、MnO2 粉末を0.05〜0.5 重量%、そして、
軟化点が 700℃以下のホウケイ酸鉛系ガラスフリットを
0.1〜1.5 重量%の量で分散含有させてなる導電ペース
ト組成物が提案されている。但しガラスフリットの組成
については開示されていない。この導電ペーストによれ
ば、これを焼成した後の導体表面がフラットな表面とは
ならず、あたかも等高線が走っているような模様が形成
され、そのような場合に半田付き性および半田に対する
耐溶解性が著しく向上し、且つ熱エージング後の接着強
度の低下が少なくなるというものである。Further, Japanese Patent Publication No. 5-14363 discloses a silver-based conductive paste in which silver powder is dispersed in an organic dispersion medium as a conductivity-imparting component.
4% by weight or less of Bi 2 O 3 powder and 0.05 to 0% of CuO powder.
6 wt%, 0.05-0.5 wt% MnO 2 powder, and
Use a lead borosilicate glass frit with a softening point of 700 ° C or less.
A conductive paste composition has been proposed which is dispersed and contained in an amount of 0.1 to 1.5% by weight. However, the composition of the glass frit is not disclosed. With this conductive paste, the conductor surface after firing does not become a flat surface, but a pattern is formed as if contour lines are running.In such a case, solderability and resistance to melting against solder The property is remarkably improved, and the decrease in adhesive strength after heat aging is reduced.
【0010】さらにまた特開平4−334007号公報には、
セラミック素体と、そのセラミック素体の外面に形成さ
れ金属と無機結合材により構成された焼付け電極層を含
む外部電極とを備えたセラミックコンデンサにおいて、
焼付け電極層の表面にPbを主成分としSn,Ag,I
nを少なくとも1種含む合金層とNiメッキ層とSn又
はSn/Pbメッキ層がこの順に形成されたセラミック
コンデンサが提案されている。なお、その合金層は無電
解および電解メッキ法またはディッピング法により形成
され、実用的な合金としてはPb93.5重量%/Sn5重
量%/Ag 1.5重量%およびPb92.5重量%/In5重
量%/Ag 2.5重量%等の組成が開示されている。それ
によれば、合金層が焼付け電極層の金属と比較して柔軟
性があり、室温でも応力を受けると容易に塑性変形し、
半田付け時に溶融しない高い融点を有するので、半田耐
熱性および半田濡れ性を具備しつつ、コンデンサが熱的
衝撃または機械的衝撃を受けても誘電体内にクラックを
生じず、結果として各種特性に優れた信頼性の高いセラ
ミックコンデンサが得られるというものである。Furthermore, Japanese Patent Laid-Open No. 4-334007 discloses that
In a ceramic capacitor provided with a ceramic body and an external electrode including a baked electrode layer formed on the outer surface of the ceramic body and composed of a metal and an inorganic binder,
The surface of the baked electrode layer is mainly composed of Pb, Sn, Ag, I
A ceramic capacitor has been proposed in which an alloy layer containing at least one type of n, a Ni plating layer, and a Sn or Sn / Pb plating layer are formed in this order. The alloy layer is formed by electroless and electrolytic plating methods or dipping methods. As a practical alloy, Pb 93.5 wt% / Sn 5 wt% / Ag 1.5 wt% and Pb 92.5 wt% / In 5 wt% / Compositions such as 2.5 wt% Ag are disclosed. According to it, the alloy layer is more flexible than the metal of the baked electrode layer, and easily plastically deforms when subjected to stress even at room temperature,
As it has a high melting point that does not melt during soldering, it has solder heat resistance and solder wettability, but does not crack in the dielectric body even when the capacitor is subjected to thermal shock or mechanical shock, resulting in excellent various characteristics. That is, a highly reliable ceramic capacitor can be obtained.
【0011】[0011]
【発明が解決しようとする課題】しかしながら、上記従
来の銀ペーストにより形成した端子電極は、ガラスフリ
ット中のPbO含有率が高いため、誘電体磁器との接着
力が不十分となって焼き付け後の電極膜に球状のふくら
みや膜の浮き、剥がれ等の外観不良が発生するという問
題点があった。また電解メッキを施した場合に、メッキ
液が端子電極を経て積層磁器コンデンサの内部電極と誘
電体磁器との間に侵入して導電性イオンを残留させるた
めに、磁器コンデンサのQ値等の特性に悪影響を及ぼす
といった問題点があった。さらにガラスフリットが電極
膜表面に層状に偏析して浮いてくるという現象が見ら
れ、そのために電極膜上に半田処理を行なう場合の半田
濡れ性や耐熱性が悪くなる、あるいはガラスフリットや
貴金属(銀)が半田中に溶け出す半田くわれという現象
が生じるという問題点もあった。However, since the terminal electrode formed of the above-mentioned conventional silver paste has a high PbO content in the glass frit, the adhesive force with the dielectric ceramic becomes insufficient, and the terminal electrode after baking is not formed. There is a problem in that a defective appearance such as a spherical bulge on the electrode film, a film floating or peeling occurs. Further, when electrolytic plating is performed, the plating solution penetrates between the internal electrodes of the laminated ceramic capacitor and the dielectric ceramics via the terminal electrodes to leave conductive ions, so that the characteristics such as the Q value of the ceramic capacitor are There was a problem that it adversely affected. Furthermore, a phenomenon in which glass frit segregates and floats in layers on the surface of the electrode film is observed, which results in poor solder wettability and heat resistance when soldering on the electrode film, or glass frit or noble metal ( There was also a problem in that a phenomenon called "solder cracking" in which silver) melts into the solder occurs.
【0012】また特開昭58−11565 号公報に提案された
組成の導電性ペーストによっても、ガラスフリット中に
含有させたZnO成分が焼き付けによりにじみ出るため
に、その導電性ペーストにより形成した電極膜がメッキ
後に変色するという問題点があった。Further, the conductive paste having the composition proposed in Japanese Patent Laid-Open No. 58-11565 also causes the ZnO component contained in the glass frit to ooze out by baking, so that the electrode film formed by the conductive paste is not formed. There was a problem of discoloration after plating.
【0013】また特開昭62−237605号公報に提案された
厚膜ペーストによっても、組成成分においてガラス成分
比がパラジウムおよび銀 100重量部に対して1〜6重量
部の範囲しかないため、電子部品の電極に採用した場
合、耐半田性および機械的強度(電極膜の固着力)に劣
るという問題点があった。The thick film paste proposed in Japanese Patent Laid-Open No. 62-237605 also has a composition ratio of 1 to 6 parts by weight with respect to 100 parts by weight of palladium and silver. When it is used as an electrode of a component, there is a problem that it is inferior in solder resistance and mechanical strength (fixing force of the electrode film).
【0014】さらに特公平5−14363 号公報に提案され
た導電ペーストによっても、CuOは誘電体磁器中のB
aTiO3 に対して熱化学反応性が強いため、誘電体磁
器にマイクロクラックが無数に発生することがあるとい
う問題点があった。Further, even with the conductive paste proposed in Japanese Examined Patent Publication No. 5-14363, CuO is contained in B in the dielectric porcelain.
There is a problem that a large number of microcracks may occur in the dielectric ceramic because of its strong thermochemical reactivity with aTiO 3 .
【0015】さらにまた特開平4−334007号公報に開示
された合金層は、メッキ法またはディッピング法によっ
て形成するものであり、磁器部にメタライズされる下地
電極(焼き付け電極)部ではないために導電性ペースト
には適用できないという問題点があった。また、メッキ
液の侵入によりコンデンサの特性が劣化するという問題
点もあった。Furthermore, the alloy layer disclosed in Japanese Patent Laid-Open No. 4-334007 is formed by a plating method or a dipping method, and is not a base electrode (baking electrode) portion to be metallized in a porcelain portion, so that it is conductive. There is a problem that it cannot be applied to the sex paste. There is also a problem that the characteristics of the capacitor are deteriorated by the intrusion of the plating solution.
【0016】本発明は、上記事情に鑑みて問題点を解決
すべく完成されたもので、その目的は、特に誘電体磁器
等の基体との接着強度を高め、外力が加わっても基体か
らの剥がれが発生しない導電膜が得られる導電性ペース
トを提供することにある。The present invention has been completed in order to solve the problems in view of the above circumstances, and its object is to enhance the adhesive strength with a base such as a dielectric porcelain or the like, even if an external force is applied. An object of the present invention is to provide a conductive paste capable of obtaining a conductive film that does not peel off.
【0017】また本発明の目的は、外観形状が良好で、
電解メッキに対する耐メッキ性に優れた導電膜が得られ
る導電性ペーストを提供することにある。Another object of the present invention is to provide a good external appearance,
An object of the present invention is to provide a conductive paste that can obtain a conductive film having excellent resistance to electroplating.
【0018】さらに本発明の目的は、積層磁器コンデン
サの端子電極形成に用いた場合に、外観形状が良好で、
誘電体磁器との接着強度および電解メッキに対する耐メ
ッキ性に優れ、かつ半田濡れ性や耐熱性にも優れてお
り、さらに電極膜にボイド等の欠陥発生が無く、メッキ
液に対する封止性が良好な電極膜が得られる、積層磁器
コンデンサの端子電極形成に好適な導電性ペーストを提
供することにある。Further, an object of the present invention is that when used for forming a terminal electrode of a laminated ceramic capacitor, it has a good external appearance,
It has excellent adhesive strength with dielectric porcelain and plating resistance against electrolytic plating, and also has excellent solder wettability and heat resistance. Furthermore, there are no defects such as voids in the electrode film, and good sealing performance against plating liquid. Another object of the present invention is to provide a conductive paste suitable for forming a terminal electrode of a laminated ceramic capacitor, which can obtain a different electrode film.
【0019】[0019]
【課題を解決するための手段】本発明の導電性ペースト
は、70〜98重量%(ただし98重量%を除く)のAg粉末
と0〜28重量%(ただし0重量%を除く)のPd粉末と
2〜11重量%のガラスフリットとから成り、そのガラス
フリットの組成成分が15〜40重量%のPbOと40〜70重
量%のBi2 O3 と0〜15重量%(ただし0重量%を除
く)のSiO2と0〜20重量%(ただし0重量%を除
く)のB2 O3 と5〜10重量%のIn2 O3 とから成る
ことを特徴とするものである。The conductive paste of the present invention comprises 70 to 98% by weight (excluding 98% by weight) of Ag powder and 0 to 28% by weight (excluding 0% by weight) of Pd powder. And 2 to 11% by weight of glass frit, the composition of the glass frit is 15 to 40% by weight of PbO, 40 to 70% by weight of Bi 2 O 3 and 0 to 15% by weight (however, 0% by weight is included). (Excluding) SiO 2 , 0 to 20% by weight (excluding 0% by weight) B 2 O 3 and 5 to 10% by weight In 2 O 3 .
【0020】[0020]
【作用】本発明の導電性ペーストにより得られる導電膜
は、そのガラスフリットの組成成分としてIn2 O
3 (酸化インジウム)を用いてIn(インジウム)を添
加したことにより、Inを含有しないAg−Pd合金に
よる導電膜に比べて機械的柔軟性がある膜となり、応力
を受けると室温においても容易に塑性変形し得る導電膜
となる。またInは導電性ペーストの焼き付け時にPd
と共に誘電体磁器などのセラミック基体に拡散して接着
強度を高める。そのため外力が加わっても基体からの剥
がれが発生しない導電膜が得られる導電性ペーストとな
る。The conductive film obtained by the conductive paste of the present invention has In 2 O as the composition component of the glass frit.
By adding In (indium) using 3 (indium oxide), the film becomes mechanically more flexible than a conductive film made of an Ag-Pd alloy that does not contain In, and easily receives stress even at room temperature. It becomes a conductive film that can be plastically deformed. Further, In is Pd when baking the conductive paste.
At the same time, it diffuses into a ceramic substrate such as a dielectric porcelain to enhance the adhesive strength. Therefore, a conductive paste is obtained in which a conductive film that does not peel off from the substrate even when an external force is applied is obtained.
【0021】従って本発明の導電性ペーストを積層磁器
コンデンサの端子電極形成に使用した場合、その電極膜
は誘電体磁器に対する外部からの応力を緩衝する特性を
有し、その結果、誘電体磁器と端子電極との接着強度を
向上させることができ、誘電体磁器からの端子電極の剥
がれ発生を防止することができ、耐メッキ性にも優れた
ものとなる。Therefore, when the conductive paste of the present invention is used for forming a terminal electrode of a laminated ceramic capacitor, the electrode film has a characteristic of buffering the external stress on the dielectric ceramic, and as a result, The adhesive strength with the terminal electrode can be improved, the terminal electrode can be prevented from peeling off from the dielectric ceramic, and the plating resistance can be excellent.
【0022】さらに本発明の導電性ペーストにより得ら
れる導電膜は、Inを含有させることによりInを含有
しない導電膜よりも高い融点を有するようになるので、
半田付けに際しても溶融しない電極膜を得ることがで
き、耐熱性や耐半田性にも優れたものとなる。Further, the conductive film obtained by the conductive paste of the present invention has a higher melting point than the conductive film not containing In because it contains In.
An electrode film that does not melt even when soldering can be obtained, and heat resistance and solder resistance are also excellent.
【0023】上記のようなIn添加効果について本発明
者が詳細に調査・検討した結果によれば、その効果は上
記組成成分に示した範囲においてInの添加量にほぼ比
例し、上記の範囲を超えた場合にはその向上効果が得ら
れないことを知見した。According to the results of detailed investigations and examinations by the present inventor regarding the above-described In addition effect, the effect is almost proportional to the In addition amount in the range shown in the above composition components, It was found that the improvement effect cannot be obtained when the amount exceeds the limit.
【0024】また本発明の導電性ペーストによれば、A
g粉末とPd粉末の組成割合の選択により、外観形状が
良好で、電解メッキに対する耐メッキ性に優れた導電膜
が得られるものとなる。しかもガラスフリットとPd粉
末の組成割合の選択により半田濡れ性にも優れたものと
なり、さらに電極膜にボイド等の欠陥発生が無く、メッ
キ液に対する封止性が良好な電極膜が得られるものとな
る。According to the conductive paste of the present invention, A
By selecting the composition ratio of the g powder and the Pd powder, it is possible to obtain a conductive film having a good external appearance and excellent plating resistance against electrolytic plating. Moreover, by selecting the composition ratio of the glass frit and the Pd powder, the solder wettability becomes excellent, and furthermore, the electrode film is free from defects such as voids and has a good sealing property against the plating solution. Become.
【0025】その結果、本発明の導電性ペーストを積層
磁器コンデンサの端子電極形成に用いた場合、外観形状
が良好で、誘電体磁器との接着強度および電解メッキに
対する耐メッキ性に優れ、かつ半田濡れ性や耐熱性にも
優れており、さらに電極膜にボイド等の欠陥発生が無
く、メッキ液に対する封止性が良好な電極膜が得られる
ので、積層磁器コンデンサの端子電極の接着性や耐熱衝
撃性を顕著に向上させることができる。As a result, when the conductive paste of the present invention is used for forming a terminal electrode of a laminated ceramic capacitor, the external shape is good, the adhesive strength with the dielectric ceramic and the plating resistance to electrolytic plating are excellent, and the solder is used. It has excellent wettability and heat resistance, and furthermore, there are no defects such as voids in the electrode film, and an electrode film with good sealing properties against the plating solution can be obtained. Impact resistance can be significantly improved.
【0026】[0026]
【実施例】以下、本発明の導電性ペーストについて具体
例に基づいて詳述する。EXAMPLES The conductive paste of the present invention will be described in detail below based on specific examples.
【0027】以下の実施例では、導電性ペーストの応用
例として積層磁器コンデンサの端子電極について説明す
るが、本発明の導電性ペーストの用途は必ずしもこれに
限定されるものではなく、ガラスやセラミック等の基板
を用いたプリント配線基板の導電回路、あるいはマイク
ロスイッチ接点部・各種電子部品の電極部など、一般に
導電性ペーストが使用される種々の用途にも適用できる
ものである。In the following examples, the terminal electrode of the laminated ceramic capacitor will be described as an application example of the conductive paste, but the use of the conductive paste of the present invention is not necessarily limited to this, and glass, ceramics, etc. It is also applicable to various applications in which a conductive paste is generally used, such as a conductive circuit of a printed wiring board using the above substrate, a microswitch contact portion, an electrode portion of various electronic parts, and the like.
【0028】本発明の導電性ペーストの金属粉末には、
70〜98重量%(ただし98重量%を除く)のAg(銀)粉
末と0〜28重量%(ただし0重量%を除く)のPd(パ
ラジウム)粉末とを用いる。これら金属粉末の組成割合
は上記範囲に設定することが内部電極との接続性や半田
濡れ性・耐熱性の点で好ましく、Ag粉末が70重量%未
満の場合には、積層磁器コンデンサチップを基板に実装
する際に半田中のSnが端子電極中のPdに拡散して導
電膜の接着強度が劣化する、いわゆる半田くわれが発生
する傾向があり、他方98重量%以上の場合には、必然的
にガラスフリット添加量が減るために接着強度や半田耐
熱性が劣化する傾向がある。The metal powder of the conductive paste of the present invention includes
70 to 98% by weight (excluding 98% by weight) of Ag (silver) powder and 0 to 28% by weight (excluding 0% by weight) of Pd (palladium) powder are used. It is preferable to set the composition ratio of these metal powders in the above range from the viewpoints of connectivity with internal electrodes, solder wettability, and heat resistance. When the Ag powder content is less than 70% by weight, the laminated ceramic capacitor chip is used as a substrate. When soldering, the Sn in the solder diffuses into the Pd in the terminal electrode and the adhesive strength of the conductive film deteriorates, so-called solder nicking tends to occur. Since the amount of glass frit added is reduced, the adhesive strength and solder heat resistance tend to deteriorate.
【0029】またPd粉末が28重量%を超える場合に
は、Ag粉末が70重量%未満の場合と同様に、半田くわ
れが発生する傾向がある。When the Pd powder content exceeds 28% by weight, solder scoring tends to occur as in the case where the Ag powder content is less than 70% by weight.
【0030】これら粉末の形状は、球状またはフレーク
状あるいはパウダー状などが良く、球状であればその比
表面積およびタップ密度がそれぞれ0.05〜10m2 /gお
よび1.0〜5.0 g/cm2 の範囲が、またフレーク状で
あればそれぞれ 0.1〜10.0m2 /gおよび 1.0〜15.0g
/cm2 の範囲が、またパウダー状であればそれぞれ5.
0〜30.0m2 /gおよび 0.1〜10.0g/cm2 の範囲
が、分散性や混合特性が良く、導電性ペーストの塗布膜
の外観形状も良好になり、安定した導電特性が得られや
すいという点で好ましい。The shape of these powders is preferably spherical, flake-shaped, or powder-like, and if spherical, their specific surface areas and tap densities are in the ranges of 0.05 to 10 m 2 / g and 1.0 to 5.0 g / cm 2 , respectively. If it is flake-like, 0.1-10.0 m 2 / g and 1.0-15.0 g, respectively
/ Cm 2 range, if powdery, 5.
In the range of 0 to 30.0 m 2 / g and 0.1 to 10.0 g / cm 2 , the dispersibility and mixing characteristics are good, the appearance shape of the conductive paste coating film is good, and stable conductive characteristics are easily obtained. It is preferable in terms.
【0031】また球状の形状の粉末とフレーク状の形状
の粉末との組合せを重量比で1:1〜1:3の範囲内に
設定し、好適には1:1.5 〜1:2とするのが、導電性
ペーストを塗布して焼き付けた後の電極膜の形状が良好
になるという点で好ましい。上記範囲よりも球状の形状
の粉末が多いと電極膜の形状がタレやすく、他方フレー
ク状の形状の粉末が多いと電極膜の形状がトガリやすい
傾向がある。The combination of the spherical powder and the flake powder is set within a weight ratio of 1: 1 to 1: 3, preferably 1: 1.5 to 1: 2. However, it is preferable in that the shape of the electrode film after applying and baking the conductive paste becomes good. If the amount of spherical powder is larger than the above range, the shape of the electrode film tends to sag, while if the amount of flake-shaped powder is large, the shape of the electrode film tends to be easily scraped.
【0032】ガラスフリットは誘電体磁器などのセラミ
ック基体と端子電極との接着性および電極膜の半田耐熱
性の向上のために用いるものであり、その組成割合は2
〜11重量%の範囲が半田濡れ性や耐熱性などの半田特性
ならびに接着強度の点で好ましい。ガラスフリットが2
重量%未満の場合には接着強度が低下し、耐熱性が劣化
する傾向があり、他方11重量%を超える場合には半田濡
れ性が劣化する傾向がある。The glass frit is used to improve the adhesion between the ceramic substrate such as a dielectric ceramic and the terminal electrode and the solder heat resistance of the electrode film, and its composition ratio is 2
The range of up to 11% by weight is preferable in terms of solder properties such as solder wettability and heat resistance, and adhesive strength. 2 glass frit
If it is less than 11% by weight, the adhesive strength tends to be low and the heat resistance tends to deteriorate, while if it exceeds 11% by weight, the solder wettability tends to deteriorate.
【0033】本発明の導電性ペーストにおいては、この
ガラスフリットの組成成分が20〜40重量%のPbOと40
〜70重量%のBi2 O3 と0〜15重量%(ただし0重量
%を除く)のSiO2 と0〜20重量%(ただし0重量%
を除く)のB2 O3 と5〜10重量%のIn2 O3 とから
成ることを特徴とする。In the conductive paste of the present invention, the composition of the glass frit is 20 to 40% by weight of PbO and 40% by weight.
~ 70 wt% Bi 2 O 3 and 0 to 15 wt% (excluding 0 wt%) SiO 2 and 0 to 20 wt% (excluding 0 wt%)
B 2 O 3 ) and 5 to 10% by weight of In 2 O 3 .
【0034】PbO(酸化鉛)は半田濡れ性および耐熱
性・接着強度の向上のために用いられ、ガラスフリット
におけるその成分比率を15〜40重量%とすることにより
それらの特性が良好となる。このPbOが15重量%未満
の場合はガラス成分が増加し、半田濡れ性が劣化する傾
向があり、他方40重量%を超える場合はガラス成分が減
少し、耐半田性が劣化する傾向がある。PbO (lead oxide) is used for improving solder wettability, heat resistance and adhesive strength, and its properties are improved by setting the component ratio in the glass frit to 15 to 40% by weight. When the PbO content is less than 15% by weight, the glass component tends to increase and the solder wettability tends to deteriorate, while when it exceeds 40% by weight, the glass component tends to decrease and the solder resistance tends to deteriorate.
【0035】Bi2 O3 (酸化ビスマス)も半田濡れ性
および耐熱性・接着強度の向上のために用いられ、ガラ
スフリットにおけるその成分比率を40〜70重量%とする
ことによりそれらの特性が良好となる。このBi2 O3
が40重量%未満の場合は上記の特性を向上させる作用効
果が十分に得られない傾向があり、他方70重量%を超え
る場合は上記の特性をそれ以上向上させる効果は得られ
ない傾向がある。Bi 2 O 3 (bismuth oxide) is also used for improving solder wettability and heat resistance / adhesive strength, and its characteristics are improved by setting the component ratio in the glass frit to 40 to 70% by weight. Becomes This Bi 2 O 3
If less than 40% by weight, the effect of improving the above properties tends to be insufficient, whereas if more than 70% by weight, the effect of further improving the above properties tends not to be obtained. .
【0036】SiO2 (二酸化珪素)は耐熱性の向上の
ために用いられ、ガラスフリットにおけるその成分比率
を0〜15重量%(ただし0重量%を除く)とすることに
より半田濡れ性および耐熱性が良好となる。このSiO
2 が0重量の場合は上記の作用効果が得られず、他方15
重量%を超える場合は焼き付けの際に端子電極の表面に
SiO2 が析出してしまい、半田濡れ性を劣化させてし
まう傾向がある。SiO 2 (silicon dioxide) is used for improving the heat resistance, and by setting the component ratio in the glass frit to 0 to 15% by weight (excluding 0% by weight), the solder wettability and the heat resistance are improved. Will be good. This SiO
When 2 is 0 weight, the above-mentioned effects cannot be obtained, while 15
If it exceeds 5% by weight, SiO 2 may be deposited on the surface of the terminal electrode during baking, which may deteriorate the solder wettability.
【0037】B2 O3 (酸化硼素)は半田耐熱性の向上
のために用いられ、ガラスフリットにおけるその成分比
率を0〜20重量%(ただし0重量%を除く)とすること
により半田耐熱性が良好となる。このB2 O3 が0重量
の場合は上記の作用効果が得られず、他方20重量%を超
える場合はガラスフリット使用温度範囲でのガラス化が
困難となる傾向がある。B 2 O 3 (boron oxide) is used for improving the heat resistance of the solder, and the heat resistance of the solder can be improved by adjusting the component ratio of the glass frit to 0 to 20% by weight (excluding 0% by weight). Will be good. If the B 2 O 3 content is 0 weight, the above-mentioned effects cannot be obtained. On the other hand, if it exceeds 20 weight%, vitrification in the glass frit use temperature range tends to be difficult.
【0038】そしてIn2 O3 (酸化インジウム)は上
述のように端子電極(電極膜)と誘電体磁器などのセラ
ミック基体との接着強度の強化のために用いられ、ガラ
スフリットにおけるその成分比率を5〜10重量%とする
ことにより接着強度が良好となる。このIn2 O3 が5
重量%未満の場合は十分な効果が得られない傾向があ
り、他方10重量%を超える場合はそれ以上の接着強度の
向上効果は望めない傾向がある。In 2 O 3 (indium oxide) is used for strengthening the adhesive strength between the terminal electrode (electrode film) and the ceramic substrate such as a dielectric ceramic as described above, and its component ratio in the glass frit is adjusted. Adhesive strength becomes good by setting it as 5-10 weight%. This In 2 O 3 is 5
If it is less than 10% by weight, no sufficient effect tends to be obtained, while if it exceeds 10% by weight, further improvement in adhesive strength tends not to be expected.
【0039】本発明の導電性ペーストは、上記のような
組成割合の金属粉末とガラスフリットとを、有機溶剤に
有機バインダ樹脂を溶解させた有機ビヒクル中に分散さ
せて用いられる。この有機ビヒクルの特性としては、こ
れを使用して得られる導電性ペーストの粘度および粘度
適性がコントロールでき、良好な塗布形状が得られるこ
と、ならびに適当な乾燥膜強度が得られることが要求さ
れる。The conductive paste of the present invention is used by dispersing the metal powder and the glass frit having the above composition ratios in an organic vehicle in which an organic binder resin is dissolved in an organic solvent. As characteristics of this organic vehicle, it is required that the viscosity and viscosity suitability of the conductive paste obtained by using the organic vehicle can be controlled, that a good coating shape be obtained, and that an appropriate dry film strength be obtained. .
【0040】本発明の導電性ペーストに用い得る有機ビ
ヒクルとしては、アクリル樹脂やフェノール樹脂・アル
キッド樹脂・ロジンエステル・エチルセルロース・メチ
ルセルロース・エチルハイドロセルロース・PVA(ポ
リビニルアルコール)・ポリビニルブチラート等の有機
バインダ樹脂を、α−テルピネオールやBCA(ブチル
カルビトールアセテート)・ベンジルアルコール等の有
機溶剤に分散させたもの等がある。Organic vehicles that can be used in the conductive paste of the present invention include organic binders such as acrylic resins, phenol resins, alkyd resins, rosin esters, ethyl cellulose, methyl cellulose, ethyl hydrocellulose, PVA (polyvinyl alcohol), polyvinyl butyrate, etc. For example, the resin may be dispersed in an organic solvent such as α-terpineol, BCA (butyl carbitol acetate) or benzyl alcohol.
【0041】中でも有機バインダ樹脂としてエチルセル
ロースを用いると、通常はセラミックグリーンシートの
結合樹脂がアクリル系であるので、この樹脂と溶解しな
い石油エーテル系の溶剤に完全に溶解する、という点で
好ましい。まか有機溶剤として石油エーテル系溶剤を用
いると、鎖状分子で結合能力の高いエチルセルロースを
十分溶解するという点で好ましい。Above all, it is preferable to use ethyl cellulose as the organic binder resin, since the binder resin of the ceramic green sheet is usually acrylic resin, so that it is completely dissolved in a petroleum ether solvent which is insoluble in this resin. Moreover, it is preferable to use a petroleum ether-based solvent as the organic solvent, because it sufficiently dissolves ethyl cellulose, which is a chain molecule and has a high binding ability.
【0042】有機ビヒクルに金属粉末やガラスフリット
を分散させるには、ロールミルやプラネタリミキサー等
を用いると良く、特にロールミルによれば一様な分散が
短時間に効率良く行なえるので好ましい。In order to disperse the metal powder and the glass frit in the organic vehicle, it is preferable to use a roll mill, a planetary mixer or the like, and a roll mill is particularly preferable because uniform dispersion can be carried out efficiently in a short time.
【0043】また、有機ビヒクルに分散させる金属粉末
とガラスフリットとの混合物の割合は、導電性ペースト
中で混合物が70〜85重量%、有機ビヒクルが15〜30重量
%の範囲で、合計して 100重量%となるように調製する
ことが、導電性ペーストのレオロジーや導電膜の外観形
状が良好になるという点で好ましい。The ratio of the mixture of the metal powder and the glass frit dispersed in the organic vehicle is in the range of 70 to 85% by weight of the conductive paste and 15 to 30% by weight of the organic vehicle in total. It is preferable to adjust the amount to be 100% by weight from the viewpoint of improving the rheology of the conductive paste and the outer shape of the conductive film.
【0044】本発明の導電性ペーストにより導電膜を形
成するには、基体となる誘電体磁器やガラス・セラミッ
ク等の表面に、ディッピング(浸漬)や印刷等の方法に
よって導電性ペーストを所望の形状および厚みに塗布し
てペースト被膜を形成し、これを乾燥した後、焼成等の
方法によって焼き付けて導電膜を形成する。In order to form a conductive film with the conductive paste of the present invention, the conductive paste is formed into a desired shape on the surface of a dielectric ceramic, glass, ceramic or the like, which is a substrate, by a method such as dipping (immersion) or printing. And a thickness to form a paste film, which is dried and then baked by a method such as baking to form a conductive film.
【0045】上記のようにして導電膜を形成するに当た
っては、ペースト被膜の厚みは30〜150 μmの範囲に設
定することが好ましく、それにより外観形状が良好で均
一な特性の導電膜を得やすくなる。また乾燥は乾燥炉を
用いて 130〜180 ℃の温度で5〜15分程度の時間行なう
ことが好ましく、それによりペースト被膜の形状のコン
トロールができることから、外観形状が良好で基体との
接着力が強く、組織が密な導電膜を得やすくなる。この
乾燥は、酸素(O2 )雰囲気下で行なうと乾燥後のペー
スト被膜の強度が向上してより好適となる。さらに焼き
付けは、焼成であれば焼成炉(トンネル炉)を用いて 6
00〜900 ℃の温度で30〜60分程度の時間行なうことが好
ましく、それにより導電膜中のAgを焼結させることが
できるので、外観形状が良好で基体との接着力が高く、
組織が密で耐メッキ性や耐半田性に優れた導電膜を得や
すくなる。この焼成も、O2 の雰囲気下で行なうとペー
スト被膜中の脱バインダが進み、良好な導電膜を得られ
るようになってより好適となる。In forming the conductive film as described above, the thickness of the paste film is preferably set in the range of 30 to 150 μm, whereby a conductive film having a good appearance and uniform characteristics can be easily obtained. Become. Drying is preferably carried out in a drying oven at a temperature of 130 to 180 ° C. for a time of about 5 to 15 minutes, which allows the shape of the paste film to be controlled, resulting in a good appearance and good adhesion to the substrate. It is easy to obtain a conductive film that is strong and has a dense structure. If this drying is performed in an oxygen (O 2 ) atmosphere, the strength of the paste coating after drying is improved, which is more suitable. For baking, use a firing furnace (tunnel furnace) if firing.
It is preferable to carry out at a temperature of 00 to 900 ° C. for about 30 to 60 minutes, whereby Ag in the conductive film can be sintered, so that the appearance shape is good and the adhesive strength to the substrate is high.
It becomes easy to obtain a conductive film having a dense structure and excellent plating resistance and solder resistance. If this firing is also performed in an atmosphere of O 2, the binder removal in the paste coating proceeds, and a good conductive film can be obtained, which is more preferable.
【0046】以下、具体例を示す。導電性ペーストの金
属粉末として80重量%のAg粉末と18重量%のPd粉末
を用意し、また2重量%のガラスフリットとして表1に
示す組成成分のものを用意した。Specific examples will be shown below. 80 wt% Ag powder and 18 wt% Pd powder were prepared as the metal powder of the conductive paste, and 2 wt% glass frit having the composition components shown in Table 1 was prepared.
【0047】[0047]
【表1】 [Table 1]
【0048】また、有機溶剤である石油エーテル系溶剤
(リプロイン)にエチルセルロースを有機バインダ樹脂
として25重量%溶解した溶液を、有機ビヒクルとして用
意した。A solution in which 25% by weight of ethyl cellulose as an organic binder resin was dissolved in a petroleum ether solvent (liproin) which is an organic solvent was prepared as an organic vehicle.
【0049】そして、上記のAg粉末とPd粉末とガラ
スフリットとをそれぞれ調合し、その固形成分78重量%
と上記の有機ビヒクル22重量%とを混合し、各々をプラ
ネタリミキサーにて90分混練した後3本ロールミルで45
分間分散させ、さらに上記の有機溶剤で粘度の調整を行
なって、表1に示す組成成分のガラスフリットを用いた
導電性ペーストA〜Gを作製した。なお、導電性ペース
トAおよびB・F・Gは比較例である。Then, the above-mentioned Ag powder, Pd powder and glass frit were mixed, respectively, and the solid content thereof was 78% by weight.
And 22% by weight of the above organic vehicle are mixed, and each is kneaded in a planetary mixer for 90 minutes and then 45 in a three-roll mill.
After being dispersed for a minute, the viscosity was adjusted with the above organic solvent to prepare conductive pastes A to G using glass frits having the composition components shown in Table 1. The conductive pastes A, B, F, and G are comparative examples.
【0050】これらの導電性ペーストをBaTiO3 系
の誘電体から成る積層磁器コンデンサチップにディッピ
ング法により塗布し、150 ℃で乾燥させ、800 ℃の焼成
温度で40分間焼成して焼結させ、それぞれ導電性ペース
トA〜Gによる積層磁器コンデンサの端子電極を形成し
て、コンデンサ試料A〜Gを作製した。These conductive pastes were applied to a laminated ceramic capacitor chip made of a BaTiO 3 -based dielectric by a dipping method, dried at 150 ° C., baked at a baking temperature of 800 ° C. for 40 minutes and sintered, respectively. Capacitor samples A to G were prepared by forming terminal electrodes of the laminated ceramic capacitor with the conductive pastes A to G.
【0051】これらのコンデンサ試料について、今田製
作所(株)製の引張圧縮試験機SV51−E−50MVを使
用して、引張圧縮速度 0.5mm/秒の条件により端子電
極の固着力強度および引張強度を測定した。これらの評
価基準としては、固着力強度が 2.0kgf以上、引張強
度が 2.0kgf以上であれば良好とした。Using the tensile compression tester SV51-E-50MV manufactured by Imada Seisakusho Co., Ltd., these capacitor samples were tested for adhesion strength and tensile strength of the terminal electrode under the conditions of a tensile compression speed of 0.5 mm / sec. It was measured. As the evaluation criteria for these, the adhesive strength of 2.0 kgf or more and the tensile strength of 2.0 kgf or more were considered good.
【0052】また外部からの応力による電極膜剥がれの
発生については、同じく今田製作所(株)製の引張圧縮
試験機SV51−E−50MVを使用して、引張圧縮速度
0.5mm/秒の条件により、各20個ずつの試料について
剥がれの発生個数を調べて評価した。Regarding the occurrence of electrode film peeling due to external stress, a tensile compression tester SV51-E-50MV, also manufactured by Imada Seisakusho Co., Ltd., was used.
Under the condition of 0.5 mm / sec, the number of occurrence of peeling was examined and evaluated for each of 20 samples.
【0053】また電極膜の耐メッキ性については、各コ
ンデンサ試料の端子電極に対してNiメッキの上にSn
メッキを各々電解メッキにより施し、その前後でのコン
デンサのQ値を測定してその変化を求めて評価した。そ
してメッキ後のQ値が 1,000以上でかつメッキ前後のQ
値の変化が 2,000以内のものを良好とした。With respect to the plating resistance of the electrode film, the terminal electrode of each capacitor sample was Sn plated on the Ni plating.
The plating was performed by electrolytic plating, and the Q value of the capacitor before and after the plating was measured, and the change was obtained and evaluated. And the Q value after plating is 1,000 or more and the Q value before and after plating
A value change within 2,000 was considered good.
【0054】さらに電極膜の半田濡れ性および耐半田性
については、Ag3%含有のPd/Ag共晶半田を用い
て浸漬法により評価した。半田濡れ性の評価条件は温度
を 230±5℃、時間を4±1秒とし、端子電極部が半田
で90%以上カバーされていれば良好(OK)とし、それ
未満のものは不良(NG)とした。また耐半田性の評価
条件は温度を 270±5℃、時間を10±5秒とし、端子電
極部の半田くわれが25%未満であれば良好(OK)と
し、それ以上のものは不良(NG)とした。Further, the solder wettability and solder resistance of the electrode film were evaluated by a dipping method using Pd / Ag eutectic solder containing 3% of Ag. The solder wettability evaluation conditions are a temperature of 230 ± 5 ° C., a time of 4 ± 1 seconds, good (OK) if the terminal electrode part is covered by 90% or more of the solder, and poor (NG) if it is less than that. ). The soldering resistance evaluation conditions were a temperature of 270 ± 5 ° C., a time of 10 ± 5 seconds, and good (OK) if the solder nick of the terminal electrode portion was less than 25%, and bad (>). NG).
【0055】これらの結果を表2にまとめた。なお試料
欄に*を記したものは、本発明の範囲外のものであるこ
とを示す。The results are summarized in Table 2. Those marked with * in the sample column indicate that the sample is outside the scope of the present invention.
【0056】[0056]
【表2】 [Table 2]
【0057】表2の結果より、本発明の導電性ペースト
であるC〜Eを用いた試料では、端子電極の固着力強度
および引張強度が大きく、応力に対する膜剥がれの発生
もなく、さらに耐メッキ性、半田濡れ性および耐半田性
の全てが良好であり、積層磁器コンデンサの端子電極と
して極めて優れた電極膜が得られることが分かる。From the results shown in Table 2, in the samples using the conductive pastes C to E of the present invention, the fixing strength and the tensile strength of the terminal electrode are large, no film peeling due to stress occurs, and the plating resistance is high. It is understood that all of the properties, solder wettability, and solder resistance are good, and an extremely excellent electrode film can be obtained as a terminal electrode of a laminated ceramic capacitor.
【0058】これに対して導電性ペーストA・Bを用い
た試料A・Bでは、In2 O3 の添加量が本発明の範囲
を超えて多いため、本発明の範囲内のものと比べて接着
強度の向上効果は特に見られず、その反面、半田濡れ性
に劣ることが分かった。On the other hand, in the samples A and B using the conductive pastes A and B, the amount of In 2 O 3 added was larger than the range of the present invention, and therefore, compared with those in the range of the present invention. The effect of improving the adhesive strength was not particularly observed, but on the other hand, it was found that the solder wettability was poor.
【0059】また導電性ペーストF・Gを用いた試料F
・Gでは、固着力および引張強度が不十分であり、電極
膜剥がれの発生も認められ、In2 O3 の添加量が本発
明の範囲より少ないために接着強度に劣ることが分か
る。さらに耐半田性にも劣っていた。Sample F using conductive pastes F and G
In the case of G, the adhesive strength and the tensile strength were insufficient, the occurrence of electrode film peeling was observed, and it was found that the adhesive strength was inferior because the amount of In 2 O 3 added was less than the range of the present invention. Furthermore, it was also inferior in solder resistance.
【0060】なお本発明の導電性ペーストによる試料C
〜Eの電極膜は、いずれも電極膜にボイド等の欠陥発生
が無く外観形状が良好であり、コンデンサの電気特性も
良好でかつ安定していることも確かめられた。Sample C using the conductive paste of the present invention
It was also confirmed that each of the electrode films of to E had good appearance and no defects such as voids in the electrode film, and the electric characteristics of the capacitor were good and stable.
【0061】[0061]
【発明の効果】以上詳述したように本発明によれば、A
g−Pd導電性ペーストにガラスフリットとしてIn2
O3 を添加してInを含有させたことにより、誘電体磁
器等の基体との接着強度を高め、外力が加わっても基体
からの剥がれが発生しない導電膜が得られる導電性ペー
ストを提供することができた。As described above in detail, according to the present invention, A
In 2 as a glass frit in g-Pd conductive paste
By adding O 3 and containing In, the adhesive strength with a base such as a dielectric porcelain is increased, and a conductive paste is obtained that can be obtained as a conductive film that does not peel off from the base even when an external force is applied. I was able to.
【0062】また本発明によれば、外観形状が良好で、
電解メッキに対する耐メッキ性に優れた導電膜が得られ
る導電性ペーストを提供することができた。Further, according to the present invention, the appearance shape is good,
It was possible to provide a conductive paste that can obtain a conductive film having excellent resistance to electroplating.
【0063】さらに本発明の導電性ペーストを例えば積
層磁器コンデンサの端子電極形成に用いた場合には、外
観形状が良好で、誘電体磁器との接着強度および電解メ
ッキに対する耐メッキ性に優れ、かつ半田濡れ性や耐熱
性にも優れており、さらに電極膜にボイド等の欠陥発生
が無く、メッキ液に対する封止性が良好な電極膜が得ら
れ、それにより外部からの応力による剥がれが発生せ
ず、電解メッキあるいは半田処理に対しても特性の安定
な積層磁器コンデンサを得ることができた。Further, when the conductive paste of the present invention is used for forming a terminal electrode of a laminated ceramic capacitor, for example, the external shape is good, the adhesive strength with the dielectric ceramic and the resistance to electrolytic plating are excellent, and It also has excellent solder wettability and heat resistance, and it has no defects such as voids in the electrode film, and has good sealing properties against the plating solution.This prevents peeling due to external stress. As a result, it was possible to obtain a laminated porcelain capacitor with stable characteristics against electrolytic plating or soldering.
Claims (1)
除く)のAg粉末と0〜28重量%(ただし0重量%を
除く)のPd粉末と2〜11重量%のガラスフリットと
から成り、該ガラスフリットの組成成分が15〜40重
量%のPbOと40〜70重量%のBi2 O3 と0〜1
5重量%(ただし0重量%を除く)のSiO2 と0〜2
0重量%(ただし0重量%を除く)のB2 O3 と5〜1
0重量%のIn2 O3 とから成ることを特徴とする導電
性ペースト。1. 70 to 98% by weight (excluding 98% by weight) of Ag powder, 0 to 28% by weight (excluding 0% by weight) of Pd powder, and 2 to 11% by weight of glass frit. The composition of the glass frit is 15 to 40% by weight of PbO, 40 to 70% by weight of Bi 2 O 3 and 0 to 1
5% by weight (except 0% by weight) of SiO 2 and 0-2
0% by weight (excluding 0% by weight) B 2 O 3 and 5-1
An electrically conductive paste comprising 0% by weight of In 2 O 3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10271095A JPH08298018A (en) | 1995-04-26 | 1995-04-26 | Conductive paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10271095A JPH08298018A (en) | 1995-04-26 | 1995-04-26 | Conductive paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08298018A true JPH08298018A (en) | 1996-11-12 |
Family
ID=14334834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10271095A Pending JPH08298018A (en) | 1995-04-26 | 1995-04-26 | Conductive paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08298018A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004172383A (en) * | 2002-11-20 | 2004-06-17 | Murata Mfg Co Ltd | Conductive paste and method for manufacturing ceramic electronic parts |
| WO2010002206A3 (en) * | 2008-07-04 | 2010-04-22 | (주) 아모엘이디 | Electrode material for aln substrate, method of forming electrode on aln substrate, and aln substrate |
| JP2011071365A (en) * | 2009-09-28 | 2011-04-07 | Taiheiyo Cement Corp | Method of manufacturing internal electrode of electronic component, and electronic component |
| JP2011129335A (en) * | 2009-12-17 | 2011-06-30 | Sumitomo Metal Mining Co Ltd | Heating curing type silver paste and conductive film formed using the same |
| DE102010049573A1 (en) * | 2010-10-26 | 2012-04-26 | Epcos Ag | Method for manufacturing multilayer component of monolithic layer-built capacitor, involves sintering layer stack containing ceramic layers arranged between internal electrodes, and doping ceramic mass during sintering by dopant |
| CN103177792A (en) * | 2011-12-23 | 2013-06-26 | 浙江昱辉阳光能源有限公司 | Lead-free aluminum paste for solar cell and preparation method thereof |
-
1995
- 1995-04-26 JP JP10271095A patent/JPH08298018A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004172383A (en) * | 2002-11-20 | 2004-06-17 | Murata Mfg Co Ltd | Conductive paste and method for manufacturing ceramic electronic parts |
| WO2010002206A3 (en) * | 2008-07-04 | 2010-04-22 | (주) 아모엘이디 | Electrode material for aln substrate, method of forming electrode on aln substrate, and aln substrate |
| JP2011071365A (en) * | 2009-09-28 | 2011-04-07 | Taiheiyo Cement Corp | Method of manufacturing internal electrode of electronic component, and electronic component |
| JP2011129335A (en) * | 2009-12-17 | 2011-06-30 | Sumitomo Metal Mining Co Ltd | Heating curing type silver paste and conductive film formed using the same |
| DE102010049573A1 (en) * | 2010-10-26 | 2012-04-26 | Epcos Ag | Method for manufacturing multilayer component of monolithic layer-built capacitor, involves sintering layer stack containing ceramic layers arranged between internal electrodes, and doping ceramic mass during sintering by dopant |
| DE102010049573B4 (en) * | 2010-10-26 | 2014-09-04 | Epcos Ag | Method for producing a multilayer component and multilayer component |
| CN103177792A (en) * | 2011-12-23 | 2013-06-26 | 浙江昱辉阳光能源有限公司 | Lead-free aluminum paste for solar cell and preparation method thereof |
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