JPH08304516A - Voltage measuring device - Google Patents
Voltage measuring deviceInfo
- Publication number
- JPH08304516A JPH08304516A JP7114297A JP11429795A JPH08304516A JP H08304516 A JPH08304516 A JP H08304516A JP 7114297 A JP7114297 A JP 7114297A JP 11429795 A JP11429795 A JP 11429795A JP H08304516 A JPH08304516 A JP H08304516A
- Authority
- JP
- Japan
- Prior art keywords
- probe
- measuring device
- voltage measuring
- integrated circuit
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measurement Of Current Or Voltage (AREA)
- Tests Of Electronic Circuits (AREA)
- Micromachines (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
(57)【要約】
【目的】梁あるいは板ばねの先端に取り付けたＥＯプロ
ーブの傾きから光てこの原理でウエハ表面の位置を正確
・高感度に検知する。
【構成】電気光学効果を有するＥＯプローブを用い、こ
のＥＯプローブでの反射光を受光し偏光面の回転角度を
検出する手段を備え、回転角度から集積回路等の内部波
形を非接触で測定する電圧測定装置において、集積回路
表面にＥＯプローブを位置決めする際に一度ＥＯプロー
ブを集積回路表面に接触させた後指定量だけ上昇させる
場合の接触位置検出用のものであって、ＥＯプローブの
反射面で反射した光のスポットを受けＥＯプローブの反
射面の変位に応じた信号を得ることのできる分割フォト
ダイオードを備え、分割フォトダイオードの出力からＥ
Ｏプローブの集積回路表面への接触を検知できる接触位
置検知手段を備える。
(57) [Abstract] [Purpose] The position of the wafer surface is detected accurately and with high sensitivity based on the principle of optical leverage from the tilt of the EO probe attached to the tip of the beam or leaf spring. [Structure] An EO probe having an electro-optical effect is used, and means for receiving the reflected light from the EO probe and detecting the rotation angle of a polarization plane is provided, and the internal waveform of an integrated circuit or the like is measured from the rotation angle in a non-contact manner. A voltage measuring device for detecting a contact position when the EO probe is brought into contact with the surface of the integrated circuit once and then raised by a designated amount when the EO probe is positioned on the surface of the integrated circuit. Equipped with a split photodiode capable of receiving a spot of light reflected by the EO probe and obtaining a signal according to the displacement of the reflection surface of the EO probe.
A contact position detecting means capable of detecting contact of the O probe with the surface of the integrated circuit is provided.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電気光学効果を有する
電気光学材料を含むＥＯ（Electro-Optic ）プローブを
用いて集積回路などの超高速電子回路の内部波形を非接
触で測定する電圧測定装置に係り、特にウエハ表面とプ
ローブの先端部との接触を検出する接触位置検出方式の
改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage measurement for contactlessly measuring an internal waveform of an ultrahigh-speed electronic circuit such as an integrated circuit using an EO (Electro-Optic) probe containing an electro-optical material having an electro-optical effect. The present invention relates to an apparatus, and more particularly, to an improvement in a contact position detection method for detecting contact between a wafer surface and a tip of a probe.
【０００２】[0002]
【従来の技術】従来より、電気光学結晶を微小プローブ
に加工し、該電子回路内部の配線からの漏れ電界を検出
する測定装置がある。図７はこの種の測定装置の一例を
示す要部構成図である。2. Description of the Related Art Conventionally, there is a measuring device which processes an electro-optic crystal into a minute probe and detects a leakage electric field from a wiring inside the electronic circuit. FIG. 7 is a main part configuration diagram showing an example of this type of measuring apparatus.
【０００３】図において、１はシリンダで、その下端部
にはＥＯプローブ２が取り付けられたプローブホルダ３
が固着されている。４はシリンダ１が内挿される円筒状
のエアガイドで、シリンダ１とエアガイド４の間に空気
を流すことによりシリンダ１を摩擦なく上下に移動させ
ることができるようになっている。５は天秤機構で、秤
の一端がシリンダ１に係合し、ＥＯプローブ２とプロー
ブホルダ３を含むシリンダ１の実効重量を小さく（例え
ば０．１ｇ）している。In the figure, reference numeral 1 is a cylinder, and a probe holder 3 having an EO probe 2 attached to the lower end thereof.
Is stuck. Reference numeral 4 is a cylindrical air guide into which the cylinder 1 is inserted. By flowing air between the cylinder 1 and the air guide 4, the cylinder 1 can be moved up and down without friction. Reference numeral 5 denotes a balance mechanism, one end of which is engaged with the cylinder 1 to reduce the effective weight of the cylinder 1 including the EO probe 2 and the probe holder 3 (for example, 0.1 g).
【０００４】６はシリンダ１を上下微動させるリニアア
クチュエータで、そのシリンダ１の微動変位は光学式ポ
ジションスケール等（図示せず）で読み取るようにして
ある。８は対物レンズで、上方からのレーザ光および照
明光を集束すると共に下方からの反射光を平行光にす
る。Reference numeral 6 is a linear actuator for finely moving the cylinder 1 up and down, and the fine movement displacement of the cylinder 1 is read by an optical position scale or the like (not shown). Reference numeral 8 denotes an objective lens that focuses laser light and illumination light from above and makes reflected light from below parallel.
【０００５】ＥＯプローブ２の先端部分は図８に示すよ
うにＥＯ結晶２１の底端面に誘電体多層膜２２が取り付
けられている。レーザ光はこの誘電体多層膜２２で全反
射し、位置合わせ用の照明光はＥＯ結晶２１と誘電体多
層膜２２を通過してウエハ７の表面で反射する。At the tip of the EO probe 2, as shown in FIG. 8, a dielectric multilayer film 22 is attached to the bottom end face of an EO crystal 21. The laser light is totally reflected by the dielectric multilayer film 22, and the illumination light for alignment passes through the EO crystal 21 and the dielectric multilayer film 22 and is reflected by the surface of the wafer 7.
【０００６】このような構成において電気光学サンプリ
ング測定を行う場合はＥＯプローブ２とウエハ７との接
触点を基準に間隙（ギャップ）を定める。その場合ウエ
ハ側は動かさずＥＯプローブ２をウエハ７の表面に接触
させた後所定のギャップ分（指定量）だけ上方に移動さ
せることにより位置決めを行っている。When performing electro-optical sampling measurement in such a configuration, a gap is defined with reference to the contact point between the EO probe 2 and the wafer 7. In this case, the wafer side is not moved, and the EO probe 2 is brought into contact with the surface of the wafer 7 and then moved upward by a predetermined gap (specified amount) for positioning.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、このよ
うな測定装置では、シリンダの摩擦によるヒステリシス
等を軽減するために空気軸受けと天秤機構を導入してお
り、また変位は光学式ポジションスケール等で読み取る
構造となっており、装置の構成が複雑であるという欠点
がある。また、構造上シリンダ部分の固有振動数は低く
なるため、外部振動の影響を受けないように、カットオ
フ周波数がシリンダ部の固有振動数に比べて十分に低
い、高級な防振台を使用する必要があった。However, in such a measuring device, an air bearing and a balance mechanism are introduced in order to reduce hysteresis due to friction of the cylinder, and the displacement is read by an optical position scale or the like. It has a structure, and has a drawback that the structure of the apparatus is complicated. Also, since the natural frequency of the cylinder is low due to the structure, use a high-grade anti-vibration table whose cut-off frequency is sufficiently lower than the natural frequency of the cylinder so that it will not be affected by external vibration. There was a need.
【０００８】本発明の目的は、このような欠点を解消す
るもので、梁あるいは板ばねの先端に取り付けたＥＯプ
ローブの傾きから光てこの原理でウエハ表面の位置を正
確・高感度に検知することのできる電圧測定装置を提供
することにある。The object of the present invention is to eliminate such a drawback, and to detect the position of the wafer surface accurately and with high sensitivity by the principle of light lever from the inclination of the EO probe attached to the tip of the beam or the leaf spring. An object of the present invention is to provide a voltage measuring device capable of performing the above.
【０００９】[0009]
【課題を解決するための手段】このような目的を達成す
るために本発明では、電気光学効果を有するＥＯプロー
ブを用い、このＥＯプローブでの反射光を受光し偏光面
の回転角度を検出する手段を備え、前記回転角度から集
積回路等の内部波形を非接触で測定する電圧測定装置に
おいて、前記集積回路表面に前記ＥＯプローブを位置決
めする際に一度ＥＯプローブを集積回路表面に接触させ
た後指定量だけ上昇させる場合の接触位置検出用のもの
であって、ＥＯプローブの反射面で反射した光のスポッ
トを受けＥＯプローブの反射面の変位に応じた信号を得
ることのできる分割フォトダイオードを備え、分割フォ
トダイオードの出力からＥＯプローブの集積回路表面へ
の接触を検知できる接触位置検知手段を具備したことを
特徴とする。In order to achieve such an object, the present invention uses an EO probe having an electro-optical effect, receives reflected light from the EO probe, and detects a rotation angle of a polarization plane. In a voltage measuring device comprising means for measuring an internal waveform of an integrated circuit or the like from the rotation angle in a non-contact manner, after positioning the EO probe on the integrated circuit surface, the EO probe is once contacted with the integrated circuit surface. A segmented photodiode for detecting a contact position when it is raised by a designated amount and capable of receiving a spot of light reflected by the reflective surface of the EO probe and obtaining a signal according to the displacement of the reflective surface of the EO probe. It is characterized in that it further comprises a contact position detecting means capable of detecting a contact of the output of the divided photodiode with the surface of the integrated circuit of the EO probe.
【００１０】[0010]
【作用】ＥＯプローブからの反射光スポットを分割フォ
トダイオードで受ける。ＥＯプローブがウエハ面に接触
しない状態では光スポットが分割フォトダイオードの各
フォトダイオードに均等に当たるようにしておくと、Ｅ
Ｏプローブがウエハ表面に接触してＥＯプローブが傾い
た場合反射光スポットが移動し分割フォトダイオードの
出力にアンバランスが生じる。このアンバランスを検出
してＥＯプローブがウエハ表面に接触したことを確認す
る。Function The reflected light spot from the EO probe is received by the split photodiode. When the EO probe does not come into contact with the wafer surface, the light spot is made to strike the photodiodes of the divided photodiodes evenly.
When the O probe comes into contact with the wafer surface and the EO probe is tilted, the reflected light spot moves and an imbalance occurs in the outputs of the split photodiodes. This imbalance is detected to confirm that the EO probe has contacted the wafer surface.
【００１１】[0011]
【実施例】以下図面を用いて本発明を詳しく説明する。
図１は本発明に係る電圧測定装置の一実施例を示す構成
図である。図において、１０は円筒、１１はその内部に
取り付けられた体物レンズ、２０は円筒１０の下端に取
り付けられたＥＯプローブである。３０はウエハ、４１
は入射光と反射光の角度を分けるためのウェッジ板、４
２はプリズム、４３はビームスプリッタ、４４は偏光ビ
ームスプリッタ、５０は４分割フォトダイオード、６
１，６２はフォトダイオードである。The present invention will be described in detail below with reference to the drawings.
FIG. 1 is a block diagram showing an embodiment of a voltage measuring device according to the present invention. In the figure, 10 is a cylinder, 11 is an object lens attached inside thereof, and 20 is an EO probe attached to the lower end of the cylinder 10. 30 is a wafer, 41
Is a wedge plate for separating the angles of incident light and reflected light, 4
2 is a prism, 43 is a beam splitter, 44 is a polarization beam splitter, 50 is a quadrant photodiode, 6
Reference numerals 1 and 62 are photodiodes.
【００１２】ウエハ３０はＸ，Ｙ，Ｚ軸方向に移動可能
なステージ（図示省略）に連結し、手動または自動で移
動できるようになっている。プリズム４２は対物レンズ
１１およびウェッジ板４１を通過したレーザ光の向きを
変えるためのものである。ビームスプリッタ４３はプリ
ズム４２から入射される光を分岐させるもので、分岐し
た光は４分割フォトダイオード５０に入る。４分割フォ
トダイオード５０はＥＯプローブ２０のウエハ３０への
接触を検出するための検出素子であり、例えば図２に示
すような回路により接触を検出することができるように
なっている。The wafer 30 is connected to a stage (not shown) movable in the X, Y, and Z axis directions and can be moved manually or automatically. The prism 42 is for changing the direction of the laser light that has passed through the objective lens 11 and the wedge plate 41. The beam splitter 43 splits the light incident from the prism 42, and the split light enters the four-division photodiode 50. The four-division photodiode 50 is a detection element for detecting the contact of the EO probe 20 with the wafer 30, and the contact can be detected by a circuit as shown in FIG. 2, for example.
【００１３】図２において、４分割のフォトダイオード
５０の各フォトダイオードＰＤ１〜ＰＤ４の各電流出力
は電流・電圧変換器５１ａ〜５１ｄにより電圧に変換さ
れ、各電圧は加算器５２ａ〜５２ｄでそれぞれ加算さ
れ、その加算出力は減算器５３ａ〜５３ｂに加えられ
る。減算器５３ａでは、ＰＤ１とＰＤ２の出力の加算値
とＰＤ３とＰＤ４の出力の加算値との差、減算器５３ｂ
では、ＰＤ１とＰＤ３の加算値とＰＤ２とＰＤ４の加算
値との差が得られる。ＥＯプローブがウエハに接触する
と、４つのフォトダイオードの中央に当たっていた光の
スポットが移動し、減算器５３ａ〜５３ｂに出力が生じ
る。スポットが左右方向に移動すると減算器５３ｂに出
力が生じ、スポットが上下方向に移動すると減算器５３
ａに出力が生じる。In FIG. 2, the current outputs of the photodiodes PD1 to PD4 of the four-divided photodiode 50 are converted into voltages by the current / voltage converters 51a to 51d, and the respective voltages are added by the adders 52a to 52d, respectively. The added output is added to the subtractors 53a and 53b. In the subtractor 53a, the difference between the added value of the outputs of PD1 and PD2 and the added value of the outputs of PD3 and PD4, the subtractor 53b
Then, the difference between the added value of PD1 and PD3 and the added value of PD2 and PD4 is obtained. When the EO probe contacts the wafer, the spots of light hitting the centers of the four photodiodes move, and outputs are generated at the subtracters 53a and 53b. When the spot moves in the horizontal direction, an output is generated in the subtractor 53b, and when the spot moves in the vertical direction, the subtractor 53b outputs.
An output occurs at a.
【００１４】ビームスプリッタ４３を透過した光（信号
光）は偏光ビームスプリッタ４４で分岐され、偏向面の
回転計測に利用される。偏光ビームスプリッタ４４で分
岐された光はそれぞれフォトダイオード６１および６２
に入射し、各フォトダイオード６１，６２の出力電流は
積分器６３，６４で積分される。減算器６５は２つの積
分器の出力（電圧）の差を求める。減算器６５の出力は
反射レーザ光の偏向面の回転角度、換言すればＥＯプロ
ーブ先端にあるＥＯ素子部における電界強度に対応す
る。The light (signal light) that has passed through the beam splitter 43 is split by the polarization beam splitter 44 and used for rotation measurement of the deflecting surface. The light beams split by the polarization beam splitter 44 are fed to photodiodes 61 and 62, respectively.
And the output currents of the photodiodes 61 and 62 are integrated by integrators 63 and 64. The subtractor 65 calculates the difference between the outputs (voltages) of the two integrators. The output of the subtractor 65 corresponds to the rotation angle of the deflecting surface of the reflected laser light, in other words, the electric field intensity at the EO element portion at the tip of the EO probe.
【００１５】このような構成における動作を次に説明す
る。ウェッジ板４１を通して入射されるパルスレーザ光
は対物レンズ１１によりＥＯプローブ２０の下面に集光
する。ＥＯプローブ下面で反射した光は対物レンズ１１
およびウェッジ板４１を通ってプリズム４２で反射しビ
ームスプリッタ４３および偏光ビームスプリッタ４４に
入る。The operation of such a configuration will be described below. The pulsed laser light incident through the wedge plate 41 is focused on the lower surface of the EO probe 20 by the objective lens 11. The light reflected by the bottom surface of the EO probe is the objective lens 11
Then, the light passes through the wedge plate 41, is reflected by the prism 42, and enters the beam splitter 43 and the polarization beam splitter 44.
【００１６】電圧測定に先立ち前準備としてＥＯプロー
ブの位置決め、すなわちＥＯプローブ２０の下面をウエ
ハ３０の表面から所定のギャップだけ離した状態にして
おく必要がある。図示しないステージを駆動してまずＥ
Ｏプローブ先端とウエハ３０の表面を接触させ、その後
この位置を基準として所定の距離だけ離れるように指定
量上方向に移動させる。このような操作により所定のギ
ャップが確保される。Prior to voltage measurement, it is necessary to position the EO probe, that is, the lower surface of the EO probe 20 is separated from the surface of the wafer 30 by a predetermined gap as a preparation. Drive a stage (not shown) to start E
The tip of the O probe and the surface of the wafer 30 are brought into contact with each other, and thereafter, a predetermined amount is moved upward with respect to this position so as to be separated by a predetermined distance. A predetermined gap is secured by such an operation.
【００１７】ＥＯプローブ先端がウエハ３０の表面に接
触したかどうかは反射光を受ける４分割フォトダイオー
ド５０により検出する。図３は接触位置検出に係る部分
の簡略図である。ウエハ３０の表面がＥＯプローブ２０
の下面２１に接触し、ＥＯプローブを支持している梁２
２がΔθ傾くと、フォトダイオード５０上での光ビーム
の変位Δｘは、 Δｘ＝２ＬΔθ ただし、ＥＯプローブ２０の下端の反射面からフォトダ
イオード５０までの光学長となり、フォトダイオードの
受光光強度の差からΔθが検出され、接触したことを知
ることができる。Whether or not the tip of the EO probe contacts the surface of the wafer 30 is detected by the four-division photodiode 50 which receives the reflected light. FIG. 3 is a simplified diagram of a portion related to contact position detection. The surface of the wafer 30 is the EO probe 20.
2 which is in contact with the lower surface 21 of the and supports the EO probe
When 2 is inclined by Δθ, the displacement Δx of the light beam on the photodiode 50 is Δx = 2LΔθ However, the optical length from the reflecting surface at the lower end of the EO probe 20 to the photodiode 50 becomes the difference in the received light intensity of the photodiode. From this, Δθ is detected, and it is possible to know that the contact has been made.
【００１８】例えば、フォトダイオード５０上での位置
検出感度を１０μｍ以上とし、光学長（光てこの長さ）
Ｌを３００ｍｍ、梁の長さを１ｍｍとすると、ＥＯプロ
ーブ２０の先端部の変位検出感度は０．０１７μｍとな
り、接触したことを高感度に検出することができる。For example, the position detection sensitivity on the photodiode 50 is set to 10 μm or more, and the optical length (optical lever length) is set.
When L is 300 mm and the length of the beam is 1 mm, the displacement detection sensitivity of the tip portion of the EO probe 20 is 0.017 μm, and the contact can be detected with high sensitivity.
【００１９】なお、電界強度の測定は上記位置決め後に
行う。偏光ビームスプリッタ４４で２分されたレーザ光
をフォトダイオード６１，６２で検出し、その検出電流
を積分器６３，６４で積分して電圧に変換し、その差を
減算器６５で求める。この減算器６５の出力は、電界強
度、換言すればＥＯプローブ近傍に位置するウエハ３０
の電圧に対応している。The electric field strength is measured after the above positioning. The laser light split into two by the polarization beam splitter 44 is detected by the photodiodes 61 and 62, the detected current is integrated by the integrators 63 and 64 to be converted into a voltage, and the difference is obtained by the subtracter 65. The output of the subtractor 65 is the electric field strength, in other words, the wafer 30 located near the EO probe.
It corresponds to the voltage of.
【００２０】なお、減算器６５で得られる信号は、フォ
トダイオード６２の出力電流（ＰＩ2 とする）とフォト
ダイオード６１の出力電流（ＰＩ1 とする）の差（ＰＩ
2 −ＰＩ1 ）であるが、光強度変化の影響を除くため
に、（ＰＩ2 −ＰＩ1）／（ＰＩ2 ＋ＰＩ1 ）を求める
ようにしてもよい。接触位置検出についても同様に、減
算器のところでは上記の関係式にならった演算を行うよ
うにしてもよい。The signal obtained by the subtractor 65 is the difference (PI) between the output current of the photodiode 62 (PI 2 ) and the output current of the photodiode 61 (PI 1 ).
2− PI 1 ), but (PI 2 −PI 1 ) / (PI 2 + PI 1 ) may be calculated in order to eliminate the influence of the change in light intensity. Similarly, for the contact position detection, the subtractor may perform an operation according to the above relational expression.
【００２１】以上のように、ウエハ表面の位置を梁の先
端に取り付けたＥＯプローブの傾きから光てこ方式で正
確かつ高感度に検知できる。またそれによって容易にＥ
Ｏプローブとウエハ表面間の距離を所定のギャップだけ
正確に離すことができる。As described above, the position of the wafer surface can be detected accurately and highly sensitively by the optical lever method from the tilt of the EO probe attached to the tip of the beam. It also makes it easier to E
The distance between the O probe and the wafer surface can be accurately separated by a predetermined gap.
【００２２】本発明では、ＥＯプローブ２０の部分を小
型化し、その固有振動数を１０〜１００Ｈｚ以上に設計
すると同時に、ウエハ表面にＥＯプローブの先端部が接
触したときの接触力を数ｇ以下にすることができ、摩擦
部のない高感度ウエハ表面検知機能を容易に実現するこ
とができる。In the present invention, the portion of the EO probe 20 is downsized and its natural frequency is designed to be 10 to 100 Hz or higher, and at the same time, the contact force when the tip of the EO probe contacts the wafer surface is set to several g or less. Therefore, it is possible to easily realize a high-sensitivity wafer surface detection function without a friction portion.
【００２３】なお、本発明は実施例に限定されるもので
はない。例えば、フォトダイオード５０は４分割ではな
く２分割フォトダイオードとしてもよい。また位置決め
の際の移動は、ウエハまたはＥＯプローブ部のいずれか
一方、あるいは両方を適宜移動するようにしてよい。The present invention is not limited to the embodiments. For example, the photodiode 50 may be a two-divided photodiode instead of the four-divided photodiode. Further, the positioning may be performed by moving either one or both of the wafer and the EO probe portion as appropriate.
【００２４】図４はＥＯプローブ部の他の実施例図で、
同図(a) に示すように水晶基板２０１に切り込み部（２
０２，２０３）を形成し、天秤構造の板ばねを形成した
ものである。板ばねは小判形の梁２０４と回転中心部の
支持部２０５ａ，２０５ｂから成り、同図(b) に示すよ
うに梁２０４の一端には三角錐状のＥＯプローブ２０が
取り付けられ、反対面の他端にはカウンタウエイトとし
てのバランサ２０６が取り付けられている。ウエハと接
触したときは同図(c) のように天秤が傾く。なお、図５
に示すようにＥＯプローブの底面に蓋状のプロテクター
２０７を取り付け、天秤の過大な傾きを防止するように
してもよい。FIG. 4 shows another embodiment of the EO probe section.
As shown in FIG. 3A, the notch (2
02, 203) to form a leaf spring having a balance structure. The leaf spring is composed of an oval beam 204 and supporting portions 205a and 205b at the center of rotation. As shown in FIG. 2B, a triangular pyramidal EO probe 20 is attached to one end of the beam 204, and the opposite surface A balancer 206 as a counterweight is attached to the other end. When in contact with the wafer, the balance tilts as shown in Figure (c). Note that FIG.
As shown in FIG. 5, a lid-shaped protector 207 may be attached to the bottom surface of the EO probe to prevent the balance from excessively tilting.
【００２５】このような天秤機構は、図６に示すように
梁部２０４の支持部からＥＯプローブのＥＯ結晶までの
長さをＬ1 （＝１．２５ｍｍ）、幅をＢ1 （＝１．００
ｍｍ）、支持部２０５ａ，２０５ｂの長さをＬ2 、幅を
Ｂ2 、天秤の微小変位をδとすると、第１表に示すよう
な特性となる。 ただし、δ＝０．０５μｍは、本発明の接触検知における分解能In such a balance mechanism, as shown in FIG. 6, the length from the supporting portion of the beam portion 204 to the EO crystal of the EO probe is L 1 (= 1.25 mm) and the width is B 1 (= 1. 00
mm), the lengths of the supporting portions 205a and 205b are L 2 , the width is B 2 , and the minute displacement of the balance is δ, the characteristics are as shown in Table 1. However, δ = 0.05 μm is the resolution in the contact detection of the present invention.
【００２６】第１表に示すような寸法の天秤にすれば、
固有振動数が高く（すなわち外部振動の影響を受けにく
い）、低接触圧の接触検知センサを作製することができ
る。なお、このＥＯプローブは水晶基板を用いているた
め、レーザ光の入力光に対して反射光の旋光性の影響を
除去できる。If a balance having the dimensions shown in Table 1 is used,
A contact detection sensor having a high natural frequency (that is, less susceptible to external vibration) and a low contact pressure can be manufactured. Since this EO probe uses a quartz substrate, it is possible to remove the influence of the optical rotatory power of the reflected light on the input light of the laser light.
【００２７】また天秤構造の部分はマイクロマシン技術
を用いて作製するのが望ましい。基板２０１の材料は水
晶の他、シリコンでもよい。水晶を使用する場合、ｚ方
向にＺ軸、ｙ方向にＸ軸、ｘ方向にＹ軸を選択するよう
にすれば精密な加工ができる。シリコンを使用する場合
は、ｚ方向に＜100＞ 軸、ｙ方向に＜110＞ 軸を選択す
ることで水晶同様精密な加工が可能である。マイクロマ
シニング技術を用いれば、形状の制約を受けず、希望す
る寸法の形状を容易に製作することができ、また結晶方
向を上記のように選択することにより寸法精度が高く、
加工性の良い天秤構造部分を作製することができる。Further, it is desirable that the portion of the balance structure is manufactured by using a micromachine technique. The material of the substrate 201 may be silicon as well as quartz. When quartz is used, precise processing can be performed by selecting the Z axis in the z direction, the X axis in the y direction, and the Y axis in the x direction. When silicon is used, by selecting the <100> axis in the z direction and the <110> axis in the y direction, it is possible to perform precise processing like quartz. By using the micromachining technology, it is possible to easily manufacture a shape having a desired size without being restricted by the shape, and by selecting the crystal direction as described above, the dimensional accuracy is high,
It is possible to produce a balance structure part having good workability.
【００２８】また、基板２０１全体を電気光学効果のあ
るGaAs，LiNb2O3，LiTa2O3などの単結晶とし、天秤構造
部分を製作してもよい。この場合にはＥＯ素子を天秤構
造部分に貼りつけたりする手間が省け、感度の高いセン
サを製作することができる。Alternatively, the whole substrate 201 may be made of a single crystal such as GaAs, LiNb 2 O 3 , LiTa 2 O 3 having an electro-optical effect, and the balance structure portion may be manufactured. In this case, the labor for attaching the EO element to the balance structure portion can be saved, and a sensor with high sensitivity can be manufactured.
【発明の効果】以上説明したように本発明によれば、ウ
エハとＥＯプローブ先端部の間隔を高精度に保つため
に、ウエハ表面にＥＯプローブを接触させるが、その際
ウエハに大きな力を加えることなく接触を高感度に検知
することができる。またＥＯプローブ部がかりに外部振
動によりウエハ面に接触したとしても、その固有振動数
が高く、慣性が小さく設計できることから、ウエハとＥ
Ｏプローブ間に加わる力は梁部や回転梁部のねじり剛性
のみであり、小さな接触圧となる。そのため、ＥＯプロ
ーブ部の接触による摩耗などによる損傷は小さく、信頼
性の高い電圧測定装置を実現することができる。As described above, according to the present invention, in order to maintain the distance between the wafer and the tip of the EO probe with high accuracy, the EO probe is brought into contact with the surface of the wafer. At that time, a large force is applied to the wafer. The contact can be detected with high sensitivity. Even if the EO probe portion comes into contact with the wafer surface due to external vibration, its natural frequency is high and the inertia can be designed to be small.
The force applied between the O-probes is only the torsional rigidity of the beam portion and the rotating beam portion, which results in a small contact pressure. Therefore, the damage due to abrasion due to the contact of the EO probe portion is small, and a highly reliable voltage measuring device can be realized.
【図１】本発明に係る電圧測定装置の一実施例を示す構
成図FIG. 1 is a configuration diagram showing an embodiment of a voltage measuring device according to the present invention.
【図２】接触を検出する回路の一例を示す構成図FIG. 2 is a configuration diagram showing an example of a circuit for detecting contact.
【図３】接触位置検出に係る部分の簡略図FIG. 3 is a simplified diagram of a portion related to contact position detection.
【図４】ＥＯプローブ部の他の実施例図FIG. 4 is a diagram of another embodiment of the EO probe unit.
【図５】ＥＯプローブ部の更に他の実施例図FIG. 5 is a diagram of yet another embodiment of the EO probe unit.
【図６】天秤機構の寸法図FIG. 6 Dimensional drawing of the balance mechanism
【図７】従来の電圧測定装置の一例を示す構成図FIG. 7 is a configuration diagram showing an example of a conventional voltage measuring device.
【図８】ＥＯプローブ部の構成図である。FIG. 8 is a configuration diagram of an EO probe unit.
１０ 筒 １１ 対物レンズ ２０ ＥＯプローブ ２１ 下面 ２２ 梁 ３０ ウエハ ４１ ウェッジ板 ４２ プリズム ４３ ビームスプリッタ ４４ 偏光ビームスプリッタ ５０ ４分割フォトダイオード ５１ａ〜５１ｄ 電流・電圧変換器 ５２ａ〜５２ｄ 加算器 ５３ａ〜５３ｂ 減算器 ６１，６２ フォトダイオード ６３，６４ 積分器 ６５ 減算器 ２０１ 水晶基板 ２０２，２０３ 切り込み部 ２０５ａ，２０５ｂ 支持部 ２０６ バランサ ２０７ プロテクター 10 Tube 11 Objective Lens 20 EO Probe 21 Lower Surface 22 Beam 30 Wafer 41 Wedge Plate 42 Prism 43 Beam Splitter 44 Polarization Beam Splitter 50 4-Division Photodiode 51a-51d Current / Voltage Converter 52a-52d Adder 53a-53b Subtractor 61 , 62 Photodiodes 63, 64 Integrators 65 Subtractors 201 Crystal substrates 202, 203 Notches 205a, 205b Supports 206 Balancers 207 Protectors
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山崎 勉 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 小山 清明 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 鈴木 満弘 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 (72)発明者 林 尚典 東京都武蔵野市中町２丁目９番32号 横河 電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tsutomu Yamazaki 2-39 Nakamachi, Musashino City, Tokyo Yokogawa Electric Co., Ltd. (72) Inventor Kiyoaki Koyama 2-39 Nakamachi, Musashino City, Tokyo Yoko Kawa Electric Co., Ltd. (72) Inventor Mitsuhiro Suzuki 2-932 Nakamachi, Musashino-shi, Tokyo Yokogawa Electric Co., Ltd. (72) Naori Hayashi 2-932 Nakamachi, Musashino-shi, Tokyo Yokogawa Electric Within the corporation
Claims (8)
い、このＥＯプローブでの反射光を受光し偏光面の回転
角度を検出する手段を備え、前記回転角度から集積回路
等の内部波形を非接触で測定する電圧測定装置におい
て、 前記集積回路表面に前記ＥＯプローブを位置決めする際
に一度ＥＯプローブを集積回路表面に接触させた後指定
量だけ上昇させる場合の接触位置検出用のものであっ
て、ＥＯプローブの反射面で反射した光のスポットを受
けＥＯプローブの反射面の変位に応じた信号を得ること
のできる分割フォトダイオードを備え、分割フォトダイ
オードの出力からＥＯプローブの集積回路表面への接触
を検知できる接触位置検知手段を具備したことを特徴と
する電圧測定装置。1. An EO probe having an electro-optical effect is used, which is provided with a means for receiving a reflected light from the EO probe and detecting a rotation angle of a polarization plane, and the internal waveform of an integrated circuit or the like is not contacted from the rotation angle. In the voltage measuring device for measuring the contact position when the EO probe is brought into contact with the surface of the integrated circuit once when the EO probe is positioned on the surface of the integrated circuit, and is then raised by a designated amount, The EO probe is provided with a split photodiode capable of receiving a spot of light reflected by the reflective surface of the EO probe and obtaining a signal according to the displacement of the reflective surface of the EO probe, and the output of the split photodiode contacts the surface of the integrated circuit of the EO probe. A voltage measuring device comprising a contact position detecting means capable of detecting a voltage.
源と前記集積回路表面への接触を検知するための光源を
同一光源としたことを特徴とする請求項１記載の電圧測
定装置。2. The voltage measuring device according to claim 1, wherein the light source for detecting the rotation angle of the polarization plane and the light source for detecting contact with the surface of the integrated circuit are the same light source.
入射光の一部を前記接触位置検知手段へ入射するように
したことを特徴とする請求項１記載の電圧測定装置。3. The voltage measuring device according to claim 1, wherein a part of the light incident on the means for detecting the rotation angle of the polarization plane is incident on the contact position detecting means.
分割フォトダイオードあるいは４分割フォトダイオード
から成ることを特徴とする請求項１記載の電圧測定装
置。4. The split photodiode has a light-receiving surface of 2
The voltage measuring device according to claim 1, wherein the voltage measuring device comprises a divided photodiode or a four-divided photodiode.
端に電気光学効果を有する材料を取り付けた構造とした
ことを特徴とする請求項１記載の電圧測定装置。5. The voltage measuring device according to claim 1, wherein the probe has a structure in which a material having an electro-optical effect is attached to one end of a beam whose other end is fixed.
にマイクロマシン技術を用いて天秤構造の板ばね部を形
成し、この板ばねの一端に電気光学効果を有する材料を
取り付け、板ばねの他端にはバランサを取り付けた構造
としたことを特徴とする請求項１記載の電圧測定装置。6. The probe has a leaf spring portion having a balance structure formed on a crystal or silicon substrate by using a micromachine technique, a material having an electro-optical effect is attached to one end of the leaf spring, and the other end of the leaf spring is attached. 2. The voltage measuring device according to claim 1, wherein the structure has a balancer attached.
物レンズで集光したときＥＯプローブ下面近傍に集光さ
れるように構成したことを特徴とする請求項１記載の電
圧測定装置。7. The voltage measuring device according to claim 1, wherein when the laser light incident on the EO probe is condensed by an objective lens, it is condensed near the lower surface of the EO probe.
物レンズで集光したときＥＯプローブ下面近傍に集光さ
れると共に、ＥＯプローブから反射した反射光も前記対
物レンズを通るように構成したことを特徴とする請求項
１記載の電圧測定装置。8. The laser light incident on the EO probe is condensed near the lower surface of the EO probe when condensed by the objective lens, and the reflected light reflected from the EO probe also passes through the objective lens. The voltage measuring device according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07114297A JP3125844B2 (en) | 1995-05-12 | 1995-05-12 | Voltage measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07114297A JP3125844B2 (en) | 1995-05-12 | 1995-05-12 | Voltage measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08304516A true JPH08304516A (en) | 1996-11-22 |
| JP3125844B2 JP3125844B2 (en) | 2001-01-22 |
Family
ID=14634348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07114297A Expired - Fee Related JP3125844B2 (en) | 1995-05-12 | 1995-05-12 | Voltage measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3125844B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624644B2 (en) | 2000-07-05 | 2003-09-23 | Ando Electric Co., Ltd. | Electro-optic probe and magneto-optic probe |
-
1995
- 1995-05-12 JP JP07114297A patent/JP3125844B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624644B2 (en) | 2000-07-05 | 2003-09-23 | Ando Electric Co., Ltd. | Electro-optic probe and magneto-optic probe |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3125844B2 (en) | 2001-01-22 |
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