JPH0831416B2 - Semiconductor manufacturing equipment - Google Patents

Description

The present invention relates to a semiconductor manufacturing apparatus for growing a compound semiconductor layer in a vacuum chamber, particularly in a vacuum chemical epitaxy (VCE) system.

[Conventional technology]

In recent years, compound semiconductors, especially III-V compounds (eg G
The demand for aAs) is increasing as it has superior performance to conventional silicon semiconductors. As a method for producing such a compound semiconductor, atoms necessary for a compound to be epitaxially grown are vaporized from a solid material by a heat gun in an ultrahigh vacuum, and this is made to collide with the substrate in the form of molecular beam, Beam growth ([MBE] Molecular Beam Epitaxy) method to grow the film of H2O or vaporization of methyl or ethyl compound of metal is sent by carrier gas such as H ₂ and introduced into the reaction chamber at atmospheric pressure or depressurization, where After being mixed with a hydrogen compound of, metalorganic CVD ([MOCVD] Metalorganic Che
mical Vapor Deposition) method.

[Problems to be solved by the invention]

However, among the above, the molecular beam epitaxy method has a problem that it is difficult to mass-produce and it is difficult to supply as much as to meet market demand. Further, the organometallic CVD method has a higher production capacity than the above molecular beam epitaxy method, but has a problem that the reaction gas used is expensive and the utilization efficiency of the reaction gas is deteriorated due to its growth mechanism. are doing. Therefore, it is difficult to use it for any purpose other than the special purpose where high price is not a problem. Further, the organometallic CVD method produces a large amount of unreacted gas (toxic gas) due to the poor utilization efficiency of the reaction gas as described above, and also for the purpose of gasifying and transporting a group III compound having a low vapor pressure, Since a large amount of carrier gas such as H ₂ used in addition to the above unreacted gas, a large amount of toxic waste gas is generated, and there is a great problem in discarding this. A conventional apparatus using such a metal organic chemical vapor deposition method is as shown in FIG. That is, the substrate 3 is placed on the heater 2 arranged in the vacuum chamber 1, and a gas for semiconductor growth is supplied from the nozzle 4 arranged on the upper side in the vacuum chamber 1 toward the substrate 3. The compound is discharged as shown by arrow A. In this device, the substrate 3 is placed on the heater 2
Since the substrate is heated from below, heat convection occurs as shown by an arrow B above the substrate 3, and heat dissipated from the substrate 3 heated by the heater 2 is emitted near the upper surface of the substrate 3 by an arrow C.
Occurs as. As a result, the gaseous compound discharged from the nozzle 4 is pushed up by the heat convection indicated by the arrow B and the radiated heat indicated by the arrow C to disturb the flow, and uniform film growth cannot be performed on the upper surface of the substrate 3. . Therefore, the above device has a major drawback that it is difficult to finish the surface of the obtained semiconductor film (semiconductor layer) to be smooth.
This defect is promoted by the fact that Ga / As particle flags generated by contact reaction in the air that cannot reach the surface of the substrate 3 due to the thermal convection of the arrow B float in the air and randomly adhere to the semiconductor film. To be done. Further, the above device is a batch type and the production efficiency is poor, and when changing the kind of gas to be supplied, the valves 5, 6, 7 of a plurality of gas supply pipes connected to the nozzle 4 are switched. Therefore, the compound used immediately before remains in the nozzle 4 and becomes an impurity, which makes it difficult to obtain a good quality semiconductor.

The present invention has been made in view of such circumstances,
An object of the present invention is to provide a semiconductor manufacturing apparatus capable of efficiently producing a high-quality semiconductor having a smooth semiconductor layer surface by combining the advantages of MBE and MOCVD.

[Means for solving problems]

In order to achieve the above object, a semiconductor manufacturing apparatus of the present invention includes a vacuum chamber capable of forming a highly vacuum, a substrate support for supporting a substrate disposed in the vacuum chamber, a reaction gas supply unit, and a substrate. In the semiconductor manufacturing apparatus provided with the heating means of, the vacuum chamber is divided into a plurality of zones, and in the plurality of zones,
A reaction chamber including a bottom face, a peripheral wall standing upright from the outer peripheral edge thereof and having a discharge path, and an upper plate that openably and closably covers the reaction space surrounded by the peripheral wall is provided, and the upper plate of each reaction chamber is provided. In addition, a holding portion for holding the substrate in contact with the reaction space is provided, and a reaction gas supply means for discharging a reaction gas to the substrate held by the holding portion is provided on the bottom surface of a predetermined reaction chamber. A heating means is provided above the upper plate of the reaction chamber, and a moving means for sequentially moving the upper plate to a plurality of reaction chambers is provided.

[Action effect]

That is, in the semiconductor manufacturing apparatus of the present invention, the vacuum chamber is highly evacuated to increase the mean free path of the reaction gas molecules so that the gas molecules efficiently collide with the substrate as molecular beams. Efficiency will be greatly improved. Further, in this apparatus, since the substrate is heated from above and the reaction gas is discharged from below, thermal convection does not occur at the upper side of the substrate and does not occur at the lower side of the substrate. Therefore, the reaction gas discharged from the lower side of the substrate reaches the surface of the substrate without being affected by the thermal convection, and forms a semiconductor layer having extremely smooth surface on the surface of the substrate. . Also, since the vacuum chamber is divided into a plurality of independent zones, and reaction zones are provided in each zone, the substrate is heated and cooled in a prescribed reaction chamber, and the reaction gas is applied to the substrate in the next reaction chamber. Can be ejected, which enables continuous production of semiconductors and can significantly improve production efficiency. Further, since the vacuum chamber is divided into a plurality of independent zones and each zone is provided with a reaction chamber, a different type of reaction gas can be used in each reaction chamber. Therefore, different kinds of reaction gases are not mixed to form impurities, and the quality of the obtained semiconductor is not deteriorated. Moreover, in this apparatus, since the group III compound having a low vacuum is highly vaporized and the group III compound having a low vapor pressure can be directly gasified and used, a carrier gas for gasifying and transporting the group III compound is unnecessary. Therefore, a small amount of gas can be disposed of after use.

Next, the present invention will be described in detail based on examples.

〔Example〕

1 and 2 show a semiconductor manufacturing apparatus used in an embodiment of the present invention. In these figures, 200 is a circular vacuum chamber in a vacuum chemical epitaxy system, the inside of which is divided into three independent zones 100a, 100b, 100c, and reaction zones 100a, 100b, 100c, respectively. Room 10 is provided. The action of each reaction chamber 10 is that the reaction chamber 10 in the zone 100a close to the substrate attachment / detachment chamber 50 is a substrate.
The chamber 100 is for preheating and cooling, the reaction chamber 10 in the zone 100b is for growing an undoped layer, and the reaction chamber 10 in the zone 100c is for growing an n-type active layer. As shown in FIGS. 3 and 4, each of the reaction chambers 10 has a square plate-like floor plate 12 and a peripheral wall 16 extending upward from the four peripheral edges of the square plate-like floor plate 12.
And the upper plate 18 attached to the cutout portion of the rotary disc 61. The rotating disc 61 is set to have a slightly smaller size than the vacuum chamber 200, and the vacuum chamber 200 is set at the end of each work.
The rotary shaft 400 provided at the center of 200 is rotated about its axis to move the upper plate 18 of each reaction chamber 10 to the next reaction chamber 10 located on the rotation direction side. As shown in FIG. 5, an arch-shaped notch 60 is formed in a portion of the rotary disc 61 corresponding to each reaction chamber 10, and the upper plate 18 is formed therein.
Is detachably attached. Numerals 18a are hooks provided at four corners of the upper surface of the upper plate 18, and are used for mounting the upper plate 18 to the arch-shaped notch 60. Reference numeral 300 denotes a substrate which is detachably attached to the hole formed in the upper plate 18 with its surface facing down, and is supported by a step provided on the periphery of the hole. More specifically, the upper plate 18 has substantially the same shape as the arched notch 60, and the arched notch 60
A step portion formed on the inner peripheral edge of 60 is detachably supported and mounted. As shown in FIG. 6, the mounting of the upper plate 18 to the arch-shaped notch 60 is performed by the hook of the upper plate 18 on which the substrate 300 is mounted in the substrate attaching / detaching chamber 50 which is continuously provided on the outer peripheral portion of the vacuum chamber 200. 18a is engaged with the bar-shaped arm of the magic hand 51 to lift the upper plate 18, and in that state, the magic hand 51 is extended into the vacuum chamber 200 and the upper plate 18 is placed on the stepped portion of the arched notch 60 of the rotary disc 61. It is done by placing. After the upper plate 18 is placed, the rod-shaped arm of the magic hand 51 is slightly lowered to release the engagement with the hook 18a of the upper plate 18. And
In this state, the magic hand 51 retracts to the substrate mounting / demounting chamber 50. The upper plate 18 is attached and detached in the reverse order of the above. In FIG. 6, reference numeral 52 is a valve that separates the substrate loading / unloading chamber 50 from the vacuum chamber 200, and 53 is a vacuum pump that brings the substrate loading / unloading chamber 50 into a vacuum state similar to that of the vacuum chamber 200 before opening the valve 52. Each reaction chamber above
An exhaust port 20 is provided along the outer periphery of the peripheral wall of the chamber 10 with a predetermined gap so that unreacted gas or excess reaction gas in the reaction chamber 10 is discharged to the vacuum chamber 10. The total area of these exhaust ports 20 is set to approximately 4% of the area of the upper plate 18 of the reaction chamber 10. 14 is a position directly below the substrate 300 on the floor plate 12 at a constant interval (25.4 mm), and the substrate 300 is
It is a nozzle hole with a diameter of 3.2 mm that is drilled so as to be perpendicular to (reverse conical shape from the lower side to the upper side, so that the reaction gas can be uniformly discharged), and the reaction chamber
It communicates with a hole 26 or 34 formed in the ceiling portion of the first mixing chamber 24 arranged on the lower side of 10. This hole 26 and
As shown in FIG. 7, the same number of 34 are arranged alternately, the holes 26 communicate with the inside of the first mixing chamber 24, and the holes 34 penetrate through the inside of the first mixing chamber 24. The duct 32 communicates with a second mixing chamber 30 provided below the mixing chamber 24. As shown in FIG. 2, a raw material injection pipe 22 communicates with the inside of the first mixing chamber 24 through the side wall. From the raw material injection pipe 22, trimethylgallium (TMGa) or triethylgallium (TEGa).
Group III compound (reaction gas) such as H.sub.2, etc. is sent to the first mixing chamber 24, and n-type and p-type dopants are sent alone or together with the group III compound to the first mixing chamber 24. . The compound or the like is uniformly mixed in the first mixing chamber 24, then passes through the holes 26 and the nozzle holes 14, and is discharged toward the substrate 300 arranged above in a uniform distribution state. A raw material injection pipe 28 is connected to the side wall of the second mixing chamber 30. This raw material injection pipe
From 28, n-type and p-type dopants or group III compounds such as triethylaluminum (TEAl) are fed into the second mixing chamber 30. The group III compound is the second
After being uniformly mixed in the mixing chamber 30 and the duct 32, the particles are discharged from the nozzle holes 14 toward the substrate 300 through the holes 34 in a uniform distribution state. The duct 32 is the first
In the mixing chamber 24, it becomes a flow resistance of the reaction gas and has a stirring action, which contributes to the improvement of the mixing property of the reaction gas in the first mixing chamber 24. Further, the entire vacuum chamber 200, the rotary disc 61, the upper plate 18, the reaction chamber 10 and the first and second mixing chambers 24, 30 are made of stainless steel, and a stainless steel support (not shown) is used. Supported). Reference numeral 42 is a supply pipe for supplying a group V compound such as AsH ₃ into the reaction chamber 10. The supply pipe 42 is arranged at a position on the floor plate 12 where the holes 26 and 34 are divided into two equal parts on the left and right sides. Has been done. And this supply pipe
A plurality of holes 42a and a plurality of holes 42b are formed in 42 in the left and right rows while maintaining a constant interval. This allows
The group V compound is supplied into the reaction chamber 10 (see FIG. 2) in a uniform distribution state. In FIG. 2, 44 is a heater disposed above the upper plate 18 of the reaction chamber 10, and 44c is a soaking plate,
By heating the substrate 300 mainly from above with axial heat, the substrate 300 is heated to a temperature at which a semiconductor compound can grow on its surface, and at the same time, the heating causes the semiconductor layer to be a substrate without being affected by thermal convection or the like. The surface of 300 can be grown uniformly. As shown in FIG. 8, the heater 44 has a linear cut in the plate-like carbon graphite.
44a are alternately provided, and electrodes 44b are attached to both ends. Although this heater 44 can uniformly heat the surface,
The soaking plate 44c provided below the heater 44 allows the planar heating to be further uniformized.

A semiconductor is manufactured using the above apparatus as follows. That is, the upper plate 18 of each band 100a, 100b, 100c
Each of the four substrates 300 is placed with the front side facing down, and two replacements are performed per day
52 semiconductors can be manufactured. This is shown in FIG.
The process of growing the MESFET epitaxy layer will be described in more detail with reference to FIGS. 1 and 2. First, the inside of the vacuum chamber 200 is set to a vacuum state with a degree of vacuum of 10 ⁻⁷ torr, and an electric charge is applied to the heater 44 to heat the heater 44 to heat the ambient temperature to 650 ° C. In that state, the upper plate 18 to which the substrate 300 is attached is extended from the substrate attachment / detachment chamber 50 by attaching the magic hand 51 to the arcuate cutout portion 60 of the rotary disc 61 corresponding to the first zone 100a, and there, for about 15 minutes. To heat.
Then, the substrate 300 is rotated together with the upper plate 18 so that the second zone 100b
To the reaction chamber 10 of. By this rotation, the first band
100a has a top plate 1 having a substrate 300 that has been subjected to all treatments.
8 comes from the third band 100c. Therefore, after using the magic hand 51 and removing it from the rotary disc 61, the upper plate 18 having an unprocessed substrate is mounted in the empty space by using the magic hand 51.
On the other hand, the substrate 300 of the upper plate 18 that has moved to the second zone 100b is treated with the reaction gas as follows. That is, trimethylgallium (TMG) is introduced into the first mixing chamber 24 which is paired with the reaction chamber 10 in the second zone 100b.
Group III compound such as a) or triethylgallium (TEGa) is fed into the mixing chamber 24 and mixed uniformly, and then the nozzle hole
From 14 to the substrate 300 located in the reaction chamber 10 of the second zone 100b
It is discharged in a uniform distribution state toward. At the same time,
A group V compound such as AsH ₃ or alkylarsine, for example, triethylarsine (TEAs) is fed into the supply pipe 42, and is excessively discharged into the reaction chamber 10 through the holes 42a and 42b. As a result, the Group V compound supplied into the reaction chamber 10 flows across the surface of the substrate 300 along with the Group III compound and the like toward the exhaust port 20 while diffusing. In the meantime, AsH ₃ and TEAs are thermally decomposed to As ₂ and come into contact with the surface of the substrate 300 together with gallium of the above gallium compound,
It grows as an undoped gallium arsenide (GaAs) layer.
The unreacted compound that does not come into contact with the substrate 300 is discharged to the outside from the exhaust port 20 of the reaction chamber 10 and is sucked to the side of the vacuum chamber 200 by the exhaust means. The GaAs layer is
It is preferable to grow at a growth rate of about 2 μm per hour,
It is preferable to form the thickness to approximately 10 ⁴ Å. In this case, it is preferable to set the concentration of impurities in the undoped GaAs layer to 1 × 10 ¹⁵ atoms / cm ³ or less. Next, the substrate 300 that has undergone the above-mentioned processing is moved from the second zone 100b together with the upper plate 18 to the reaction chamber 10 in the third zone 100c by the rotation of the rotary disc 61. By this rotation, the first band 10
The substrate 300 heat-treated at 0a reaches the second zone 100b. On the other hand, the doping process is performed on the substrate 300 that has moved to the third zone 100c. That is, the n-type dopant is discharged together with the group III compound from the first mixing chamber 24 into the reaction chamber 10 of the third zone 100c, or is discharged alone from the second mixing chamber 30 into the reaction chamber 10. As a result, an n-type active layer is grown and formed on the surface of the undoped GaAs layer of the substrate 300. This n-type active layer is preferably grown at a growth rate of about 2 μm per hour and has a thickness of 2 ×.
10 ³ Å, and the concentration of n-type dopant in it is approximately 2 × 10 ¹⁷
It is preferable to set it to be atoms / cm ³ . After that, the gas supply such as the group III compound is stopped for about 15 minutes. Then, the rotating disc 61 is further rotated so that the substrate 300 that has undergone the above-described processing is placed in the first zone 100.
It is returned to the reaction chamber 10 of a and cooled there. This rotating disc 61
The rotation of the substrate causes the substrate 300 having the undoped GaAs layer formed in the second zone 100b to reach the third zone 100c and undergoes the doping process. On the other hand, the substrate 300 cooled in the first zone 100a is taken out to the substrate attaching / detaching chamber 50 together with the upper plate 18 by the magic hand 51. In this apparatus, semiconductors can be continuously manufactured by repeating the above operation. In this case, in each reaction chamber 10 of the above apparatus, the processing imposed on each reaction chamber is performed at the same time. The time required for such a series of processing is the heating in the first zone 100a,
Approximately 15 minutes each for cooling, approximately 30 minutes for undoped layer growth in the second zone 100b, and approximately 15 minutes for n-type active layer growth in the third zone 100c.
In addition, it takes about 15 minutes for the non-growth period (without supply of gaseous compounds etc.), which is about 1.5 hours in total. Therefore, it takes 1.5 hours to manufacture twelve substrates 300, and if this is continuously operated with two shifts per day, 1152 semiconductors can be manufactured in one week.

Next, FIG. 10 shows a chart of the growth process of the HEMT epitaxy layer. That is, in the same manner as in the above direction, in the second and third zones 100b, 100c, from the second mixing chamber 30 (FIG. 2), triethylaluminum (TEA
l) etc. by supplying a group III compound containing Al
A HEMT epitaxy layer can be grown. In this case, first, the substrate 300 is placed in the first zone 1 as in the above method.
After heating at 00a, in the second zone 100b, a gaseous Group III and Group V compound was used and the dopant concentration was 1 × 10 ¹⁵
Grow a GaAs layer with a thickness of approximately 10 ⁴ Å at atoms / cm ³ or less,
In addition to the above gas, an Al-containing compound is added to the second mixing chamber.
Discharge from 30 and the thickness of 30-100
Å grow undoped Al _z Ga _1-z As layer. further,
In the third zone 100c, an n-type dopant is discharged in addition to the above-mentioned gas and the like, and a thickness of 500 Å is applied to the surface of the Al _z Ga _1-z As layer.
⁺ Growing Al _z Ga _1-z As layer. In this case, the above number Z is
It is 0.1 to 0.9, preferably 0.2 to 0.3. After that, the second
By closing an exhaust valve (not shown) provided in the raw material supply pipe 28 of the mixing chamber 30, the supply of the Al-containing compound in the above-mentioned gas or the like is stopped, and the thickness containing the n-type dopant is substantially reduced. Grow 10 ³ Å n-type GaAs layer. Then, similarly to the above, the substrate 300 having the semiconductor layer formed on the surface thereof is formed into the first band 1
After cooling with 00a, a signal source electrode and the like are taken out of the semiconductor manufacturing equipment. In this way, a HEMT semiconductor can be obtained. The time required in this case is the same as in the case of the above method.

In the above-mentioned device, the substrate 300 from the nozzle hole 14
Is shorter than the mean free path of the gas molecules of the group III compound in the vacuum state (the distance traveled until the gas molecules collide with other molecules and react), and the compound to the surface of the substrate 300 Set so that the dispersed state of is uniform. To explain this in more detail, the substrate 300 is arranged at a position where the respective circles formed at the tips of the group III compound or the like that diffuse upward in a conical shape from the respective nozzle holes 14 cross each other, The distribution state of the gas molecules reaching the substrate 300 and the collision speed thereof are set so that the gas molecules grow on the surface of the substrate 300 at an appropriate speed. Alternatively, the substrate 30 from the preset nozzle hole 14
The degree of vacuum in the vacuum chamber 200, the discharge rate of the gaseous compound, and the numbers and diameters of the holes 26 and 34 and the nozzle holes 14 are adjusted according to the distance up to 0. Thereby, the thickness within the specified thickness ± 5%, more preferably the specified thickness ± 1
A semiconductor layer having a thickness in the range of% is obtained. In addition, the reaction rate when GaAs is obtained from TEGa and AsH ₃ etc. generally progresses faster as the temperature of the substrate 300 increases, but when the temperature of the substrate 300 is too high, a layered structure is formed. The substance re-evaporates and reduces the layer growth rate. Therefore, the temperature of the substrate 300 is preferably 500 to 700 ° C,
Particularly preferred is 600 to 650 ° C. Further, the vacuum state in the reaction chamber 10 is preferably 10 ⁻⁶ Torr or less. Besides, relations of various conditions such as the speed of TEGa and AsH ₃ and the temperature of the substrate 300 can be expressed by the following equations (1), (2) and (3).

In this formula (1), f is the beam flux of the compound shown below, F is its flow rate, A is the growth area, and a is the exhaust port 20.
Area. The area a of this exhaust port 20 is the growth area area A
Is preferably about 4%, and if it exceeds 4%, the group V compound is excessively discharged to the outside, and the distribution state in the reaction chamber 10 is not uniform. Therefore, the uniformity of the obtained semiconductor layer deteriorates. On the other hand, when the content is 4% or less, the flow of the group V compound from the inside to the outside of the reaction chamber 10 is deteriorated, the utilization efficiency of the group III compound is reduced, and effective growth of the semiconductor layer cannot be obtained. This equation (1) shows that the density ratio of As ₂ and Ga is proportional to the product of the ratio of the growth area A to the area a of the exhaust port 20 and the flow rate ratio of AsH ₃ and TEGa.

λ = KTV _b / πd _a ² V _h P. In ... (2) This equation (2), the mean free path of λ Group III compounds, d _a is the average diameter of the molecules colliding with the substrate 300, T is the temperature, the V _b is discharged from the nozzle hole 14 III The velocity of the linear molecule of the group compound, V _h , represents the velocity of the molecule of the group V compound heated near the substrate 300. According to this equation (2), the reaction chamber
The shape of 10 can be set appropriately, the distance between the nozzle hole 14 and the substrate 300 is smaller than the mean free path λ of the group III compound, and the group V compound is uniformly distributed on the surface of the substrate 300. It is important to keep such distance.

Next, the pressure drop between the central portion of the reaction chamber 10 and the exhaust port 20 should be smaller than the pressure difference between the inside and outside of the reaction chamber 10 with the exhaust port 20 sandwiched therebetween.
For example, if the reaction chamber 10 has the same length and width,
The ratio of the conductance Ca from the central portion to the side wall of the inside of 10 and the conductance Co outside the reaction chamber 10 is expressed by the following equation (3).

C _a / C _o = 4h ² / a (3) In this formula, h represents the distance from the nozzle hole 14 to the substrate 300, and a represents the area of the exhaust port 20. In this relationship, Ca / Co is preferably 4. That is, the pressure fluctuation in the reaction chamber 10 is preferably about 25% or less. Further, the group V compound discharged into the reaction chamber 10 is preferably supplied in excess so as not to be affected by the pressure fluctuation in the reaction chamber 10. Even in that case, the usage amount is about 1/20 as compared with the conventional metalorganic CVD method.

As described above, the continuous manufacturing apparatus for this semiconductor is equipped with the vacuum chamber 20.
0 is divided into three bands 100a, 100b, 100c, and each band 1
The substrate 300 is sequentially moved to the reaction chambers 10 arranged in 00a, 100b, 100c so that different treatments can be continuously performed. Therefore, efficient production can be performed. Further, the reaction chamber 10 is provided in each of the zones 100a, 100b, 100c, and since the substrate 300 is processed in the reaction chamber 10, the reaction gas can be effectively used, and the zones 100a, 100b, 100c Reaction chamber
It is possible to use 10 different compounds. Therefore, it is possible to improve the utilization efficiency of the reaction gas, and it is possible to prevent the occurrence of a situation in which the quality of the semiconductor layer is deteriorated due to the inclusion of a different compound as an impurity in another compound. Moreover, in the above apparatus, by discharging the unreacted gaseous compound from the discharge port 20 to the outside of the reaction chamber 10, a flow of the compound at a constant flow rate is generated in the reaction chamber 10, and Mixing chamber 24,30
Since the supply pipe 42 is disposed at a position that divides the plurality of nozzle holes 14 communicating with each other into two, the group V compound or the like can be sent to the surface of the substrate 300 in a uniform state and is made of a group III-V compound. The semiconductor layer can be grown in a uniform state. Furthermore, since no carrier gas is used, the amount of gas used is small, and disposal such as disposal becomes easy.

In the above-mentioned embodiment, the reaction chamber 10 is formed into a cylindrical shape, and each upper plate 18 is also circular correspondingly so that each upper plate 18 can be independently moved to each reaction chamber 10, and each upper plate 18 is moved into the reaction chamber 10. You may make it rotate slowly about the center of. This makes it easier to form the semiconductor layer in a more uniform state. Further, in the above-mentioned embodiment, three same-shaped devices are used as the reaction chamber 10. However, the present invention is not limited to this, and more reaction chambers may be added to increase the number of processing steps to form a multi-layered structure. Semiconductors may be manufactured, and heating and cooling may be performed by separate devices. Also the substrate
The movement of 300 to each reaction chamber 10 is not limited to the rotation of the upper plate 18 by the rotation of the rotating disc 61 as in the above embodiment, and the upper plate 18 and the mixing chamber are fixed. Alternatively, the bottom plate 12 together with the peripheral wall 16 may be moved to the next reaction chamber. Further, the reaction chamber 10 used in the first zone 100a may be configured as a chamber that can be simply heated and cooled without providing a nozzle or the like, or the other zones 100b, 100c.
The reaction chamber 10 of 1 also has a mixing chamber corresponding to the processing performed therein.
It may be deformed into individual pieces, or by adding three pieces further downward. Further, in the above embodiment, the peripheral wall of the reaction chamber 10
Although the exhaust port 20 is provided in 16, the exhaust port 20 may not be provided in the peripheral wall 16 and the gap between the peripheral wall 16 and the upper plate 18 may be used as the exhaust passage. In the above embodiment, the mixing chambers 24 and 30 are separated from each other, and different raw material gases are sent to the reaction chamber 10 from the nozzle holes 14 communicating with the respective mixing chambers.
The mixing chambers 24 and 30 may be communicated with each other through holes or the like, and the raw material gases sent from the respective raw material injection pipes 22 and 28 may be mixed in the mixing chamber 24 and then sent to the reaction chamber 10. Further, a cooling jacket or the like may be provided in the mixing chamber and cooling water or the like may be sent to the mixing chamber to cool the gaseous compound to an appropriate temperature. This makes it possible to prevent the temperature of the gaseous compound from becoming excessively high and prevent the early reaction of the gaseous compound.

[Brief description of drawings]

FIG. 1 is a plan view of an embodiment of the present invention, and FIG.
-A 'is a longitudinal sectional view, Fig. 3 is a sectional view of the reaction chamber block, Fig. 4 is a perspective view of the reaction chamber without the upper plate, and Fig. 5 is a plan view of the rotating disk block. FIG. 6 is a plan sectional view including the substrate supply device, FIG. 7 is a plan view showing the distribution of nozzle holes and supply pipes in the reaction chamber, FIG. 8 is a plan view of the heater, and FIG. 9 is a MESFET epitaxy layer. Fig. 10 is a chart of the growth process of Fig. 10, Fig. 10 is a chart of the growth process of the HEMT epitaxy layer, and Fig. 11 is a sectional view of a conventional example. 10 ... Reaction chamber, 12 ... Floor plate, 14 ... Nozzle hole, 16 ... Peripheral wall, 18 ... Upper plate, 20 ... Exhaust port, 22,28 ... Raw material injection pipe, 24, 30 ... Mixing chamber , 32 …… duct, 42 …… supply pipe, 4
4 …… Heater, 44c …… Soaking plate, 61 …… Rotating disk, 100a, 1
00b, 100c …… Band, 200 …… Vacuum chamber, 300 …… Substrate, 400
……Axis of rotation

Claims (3)

[Claims] 1. A semiconductor manufacturing apparatus provided with a vacuum chamber capable of forming a highly vacuum, a substrate supporting member for supporting a substrate arranged in the vacuum chamber, a reaction gas supply unit, and a substrate heating unit. , The vacuum chamber is divided into a plurality of zones, and the plurality of zones cover the bottom surface, the peripheral wall with a discharge path rising from the outer peripheral edge thereof, and the reaction space surrounded by the peripheral wall so as to be openable and closable. A reaction chamber consisting of a plate is provided, and the upper plate of each reaction chamber is provided with a holding unit for holding the substrate in contact with the reaction space, and at the bottom of the predetermined reaction chamber,
A reaction gas supply unit for discharging a reaction gas to the substrate held by the holding unit is provided, a heating unit is provided above the upper plate of the reaction chamber, and the upper plate is sequentially moved to a plurality of reaction chambers. A semiconductor manufacturing apparatus comprising a moving means. 2. A plurality of nozzle holes for discharging a reaction gas are provided on the bottom surface of the reaction chamber, and first and second mixing chambers are provided in a multi-stage below the reaction chamber. Injecting means for injecting different reaction gases into the two mixing chambers is provided, and an outlet for introducing the reaction gas in the mixing chamber to a predetermined nozzle hole in the bottom portion of the reaction chamber is provided in the ceiling of the first mixing chamber. An outlet is provided in the ceiling of the second mixing chamber for taking out the reaction gas in the second mixing chamber, and a predetermined nozzle hole at the bottom of the reaction chamber passes through the first mixing chamber from the outlet. The semiconductor manufacturing apparatus according to claim 1, further comprising an extending reaction gas passage. 3. The reaction chamber is provided on the bottom surface of the reaction chamber so as to divide the plurality of nozzle holes for discharging the reaction gas provided on the bottom surface of the reaction chamber into groups of substantially the same number on the left and right. The semiconductor manufacturing apparatus according to claim 1, further comprising a discharge source for discharging the reaction gas.