JPH0831453B2 - Thin film formation method - Google Patents
Thin film formation methodInfo
- Publication number
- JPH0831453B2 JPH0831453B2 JP61010410A JP1041086A JPH0831453B2 JP H0831453 B2 JPH0831453 B2 JP H0831453B2 JP 61010410 A JP61010410 A JP 61010410A JP 1041086 A JP1041086 A JP 1041086A JP H0831453 B2 JPH0831453 B2 JP H0831453B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- thin film
- film
- susceptor
- ultraviolet light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造に用いられる薄膜の形成
方法に関し、特に溶液塗布熱処理による薄膜の形成方法
に関する。The present invention relates to a method for forming a thin film used for manufacturing a semiconductor device, and more particularly to a method for forming a thin film by solution coating heat treatment.
半導体高集積回路装置に於いては、層間絶縁膜として
平坦化された酸化膜が用いられている。この平坦化酸化
膜の成膜方法の一つとして溶液塗布を用いる方法があ
る。従来の方法は、酸化ケイ素含有溶液を基板上に塗布
し、前熱処理（200℃）した後、酸素雰囲気中で炉周囲
からの加熱、すなわち、塗布膜表面からの加熱による熱
処理（600〜900℃）を行っていた。In a highly integrated semiconductor circuit device, a flattened oxide film is used as an interlayer insulating film. As one of the film forming methods for the flattening oxide film, there is a method using solution coating. The conventional method is to apply a solution containing silicon oxide onto a substrate, perform a preheat treatment (200 ° C), and then heat it from the surroundings of the furnace in an oxygen atmosphere, that is, heat treatment by heating from the coating film surface (600 to 900 ° C) ) Was going on.
上述した従来の方法は、形成されたシリコン酸化膜の
膜中にわずかながら有機物が残ったり、あるいは充分な
酸化が行なわれないという欠点がある。このため、形成
された膜の電気的絶縁性が悪い。The above-mentioned conventional method has a drawback that a small amount of organic matter remains in the formed silicon oxide film or sufficient oxidation is not performed. Therefore, the formed film has poor electrical insulation.
本発明の薄膜形成方法は、酸化ケイ素含有溶液が塗布
された半導体基板をサセプター上に載置して酸素雰囲気
中で熱処理し、前記半導体基板上にシリコン酸化膜を形
成する薄膜の形成方法において、前記熱処理は前記サセ
プターを加熱しながら紫外光を照射することによって行
われることを特徴とする。The thin film forming method of the present invention is a method for forming a thin film in which a silicon oxide-containing solution-coated semiconductor substrate is placed on a susceptor and heat-treated in an oxygen atmosphere to form a silicon oxide film on the semiconductor substrate. The heat treatment is performed by irradiating with ultraviolet light while heating the susceptor.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は、本発明の一実施例に用いた紫外光照射／熱
処理装置の断面図である。FIG. 1 is a sectional view of an ultraviolet light irradiation / heat treatment apparatus used in one embodiment of the present invention.
本装置は、ヒーター１を内蔵したサセプター２と、紫
外光照射のための低圧水銀灯３と、酸素ガスを導入する
酸素ガス導入口４及び、酸素ガスを排気する排気口５と
から構成されている。This device comprises a susceptor 2 having a heater 1 built therein, a low-pressure mercury lamp 3 for irradiating ultraviolet light, an oxygen gas inlet 4 for introducing oxygen gas, and an exhaust port 5 for exhausting oxygen gas. .
前熱処理後の酸化ケイ素含有溶液６をもつ基板７はサ
セプタ２上に設置される。The substrate 7 having the silicon oxide-containing solution 6 after the pre-heat treatment is placed on the susceptor 2.
本装置の特徴は酸化ケイ素含有溶液６が基板７を通し
て加熱され、かつ、酸素雰囲気中で紫外光が照射される
ことにある。The feature of this apparatus is that the silicon oxide-containing solution 6 is heated through the substrate 7 and is irradiated with ultraviolet light in an oxygen atmosphere.
本実施例に於いて、用いられた酸化ケイ素含有溶液
は、10％のケイ素成分、２％のホウ素成分、１％のリン
成分を含むアルコラートを主成分とするものである。こ
の溶液をシリコン基板に毎分3000回転で回転塗布し、窒
素中、200℃の前処理を行なった後、上記の紫外光照射
／熱処理装置で熱処理を行ない、膜形成した。The silicon oxide-containing solution used in this example is mainly composed of alcoholate containing 10% silicon component, 2% boron component, and 1% phosphorus component. This solution was spin-coated at 3000 rpm on a silicon substrate, pretreated in nitrogen at 200 ° C., and then heat-treated by the above-mentioned ultraviolet light irradiation / heat treatment apparatus to form a film.
この熱処理条件として、酸素ガス流量毎分20、低圧
水銀灯から発せられる波長185nm光の強度10〔mw/c
m2〕、サセプタ温度600℃がとられた。As the heat treatment conditions, the flow rate of oxygen gas was 20 per minute, and the intensity of light emitted from a low-pressure mercury lamp at a wavelength of 185 nm was 10 [mw / c
m 2 ], a susceptor temperature of 600 ° C. was taken.
ここで、本発明の方法で形成されたシリコン酸化膜の
特性を評価したところ、従来の方法で形成したシリコン
酸化膜のものに比べ、例えば、もれ電流は、図２に示す
様に一桁以上小さいものである等、格段に優れたもので
あった。Here, when the characteristics of the silicon oxide film formed by the method of the present invention were evaluated, as compared with those of the silicon oxide film formed by the conventional method, for example, the leakage current is one digit as shown in FIG. It was remarkably excellent, such as being smaller than the above.
以上説明したように本発明は、酸化ケイ素含有溶液を
基板に塗布、前熱処理後、酸化雰囲気中かつ紫外光照射
下で基板下からの加熱による熱処理するため、 （１） 酸化ケイ素含有溶液に含まれている有機成分の
分解気化を促進する効果。As described above, according to the present invention, since the silicon oxide-containing solution is applied to the substrate, preheated, and then heat-treated by heating from below the substrate in an oxidizing atmosphere and under irradiation of ultraviolet light, (1) the silicon oxide-containing solution is included. The effect of promoting decomposition and vaporization of existing organic components.
（２） 酸素の紫外光照射で形成される０＊ラディカル
による酸化促進の効果。(2) Oxidation-promoting effect due to 0 * radical formed by irradiation of oxygen with ultraviolet light.
がある。There is.
その結果、電気的絶縁性の優れたシリコン酸化膜を、
溶液塗布法によって形成することが出来る効果がある。As a result, a silicon oxide film with excellent electrical insulation is
There is an effect that it can be formed by a solution coating method.
第１図は、本発明の実施例に用いた紫外光照射／熱処理
装置の断面図、第２図は本発明の一実施例により形成し
た膜のＩ−Ｖ特性を示すグラフである。 １……ヒーター、２……サセプタ、３……低圧水銀灯、
４……酸素ガス導入口、５……排気口、６……酸化ケイ
素含有溶液、７……基板。FIG. 1 is a cross-sectional view of an ultraviolet light irradiation / heat treatment apparatus used in an example of the present invention, and FIG. 2 is a graph showing IV characteristics of a film formed according to an example of the present invention. 1 ... Heater, 2 ... Susceptor, 3 ... Low-pressure mercury lamp,
4 ... Oxygen gas introduction port, 5 ... Exhaust port, 6 ... Silicon oxide containing solution, 7 ... Substrate.
Claims (1)
板をサセプタ上に載置して酸素雰囲気中で熱処理し、前
記半導体基板上にシリコン酸化膜を形成する薄膜の形成
方法において、前記熱処理は前記サセプタを加熱しなが
ら紫外光を照射することによって行われることを特徴と
する薄膜の形成方法。1. A method for forming a thin film in which a semiconductor substrate coated with a silicon oxide-containing solution is placed on a susceptor and heat-treated in an oxygen atmosphere to form a silicon oxide film on the semiconductor substrate. A method for forming a thin film, which is performed by irradiating ultraviolet light while heating the susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61010410A JPH0831453B2 (en) | 1986-01-20 | 1986-01-20 | Thin film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61010410A JPH0831453B2 (en) | 1986-01-20 | 1986-01-20 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62166529A JPS62166529A (en) | 1987-07-23 |
| JPH0831453B2 true JPH0831453B2 (en) | 1996-03-27 |
Family
ID=11749373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61010410A Expired - Fee Related JPH0831453B2 (en) | 1986-01-20 | 1986-01-20 | Thin film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831453B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2770856B2 (en) * | 1987-08-20 | 1998-07-02 | 東京農工大学長 | Method of forming high dielectric constant oxide thin film |
| JPS6457626A (en) * | 1987-08-28 | 1989-03-03 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01216544A (en) * | 1988-02-24 | 1989-08-30 | Sharp Corp | Forming method for passivation film of semiconductor element |
| JP2759655B2 (en) * | 1988-05-17 | 1998-05-28 | 株式会社高純度化学研究所 | Silicon oxide film modification method |
| JP2519586B2 (en) * | 1990-07-12 | 1996-07-31 | 三菱電機株式会社 | Semiconductor device manufacturing method and manufacturing apparatus thereof |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317389B2 (en) * | 1973-01-16 | 1978-06-08 | ||
| JPS49107176A (en) * | 1973-02-13 | 1974-10-11 |
-
1986
- 1986-01-20 JP JP61010410A patent/JPH0831453B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62166529A (en) | 1987-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3262334B2 (en) | Method for processing semiconductor wafers | |
| JPS6142145A (en) | Method of treating wafer | |
| JPH088255B2 (en) | Semiconductor substrate surface treatment method and semiconductor substrate surface treatment apparatus | |
| JPH0831453B2 (en) | Thin film formation method | |
| JP2001023916A (en) | Method and apparatus for treating matter by electromagnetic waves | |
| JPH0329297B2 (en) | ||
| JP3149739B2 (en) | Multilayer wiring formation method | |
| JP2001110802A (en) | Method of forming insulating film | |
| JPS5874051A (en) | Method of forming integrated circuit | |
| JP3271407B2 (en) | Heat treatment method and heat treatment apparatus | |
| JPS62136827A (en) | Manufacture of semiconductor device | |
| JPS6476737A (en) | Manufacture of semiconductor integrated circuit device | |
| JP3225331B2 (en) | Method of forming SOG film and ozone treatment apparatus | |
| JP3796796B2 (en) | Method and apparatus for forming chemically amplified resist pattern | |
| WO2019049735A1 (en) | Method for forming insulating film, apparatus for processing substrate, and system for processing substrate | |
| KR900004441B1 (en) | Manufacturing Method of Semiconductor Device | |
| JPS6260226A (en) | High speed optical oxidation and nitrification device | |
| JPH02237030A (en) | Manufacture of semiconductor integrated circuit | |
| JPH0831813A (en) | Oxide film forming method and semiconductor manufacturing method using the same | |
| JP3439580B2 (en) | Method and apparatus for forming silicon oxide film | |
| JPS5933255B2 (en) | Manufacturing method of semiconductor device | |
| RU2183365C1 (en) | Method for boron diffusion in silicon plate | |
| JPH0729839A (en) | Heat treatment apparatus and heat treatment method using the same | |
| JP2585439B2 (en) | Method for manufacturing semiconductor device | |
| JPH1064909A (en) | Method for manufacturing antireflective film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |