JPH08362Y2 - Vacuum deposition manipulator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a vacuum deposition manipulator which is attached to a vacuum chamber and causes a deposition source in the vacuum chamber to deposit a film forming material on a substrate.

[Conventional technology]

When manufacturing a SiO rotation weighting oblique vapor deposition film for liquid crystal alignment substrates, first of all, in order to improve the insulating property of the substrate with electrodes, the incident angle to the substrate is set to 0 to 20 ° and the substrate is rotated at a constant speed to make it uniform. Forming a simple SiO vapor deposition film. Next, the column-structured SiO vapor deposition film is formed while setting the incident angle to the substrate at 75 to 85 ° and weighting the substrate rotation speed. (Reference: K. Hiroshima, “Controlled Hi
gh-Tilt-Angle Nematic Alignment Compatible with
Glass Frit Sealing ", Japanese J. Appl. Phys., 21 , L76
1 (1982)) In addition, it is necessary to orient the non-linear optical material when forming a vapor-deposited thin film of the non-linear optical material. In such a case, as a base treatment to promote the orientation of the deposited film,
A method of performing rotation weighted oblique vapor deposition of SiO and then depositing a nonlinear optical material in multiple layers thereon is performed. It is desirable that all of these vapor deposition operations be performed in vacuum to avoid contamination of the substrate in air. Therefore, as the manipulator to be used, a manipulator capable of arbitrarily setting the substrate angle with respect to the vapor deposition source from outside the vacuum chamber and capable of forming a film while continuously rotating the substrate is required. In addition, it is necessary to be able to match the substrate direction with a plurality of vapor deposition sources.

Conventionally, as a manipulator for performing vacuum deposition while rotating a substrate, a chamber-mounted type having a function of moving the substrate up and down, left and right, and a rotational movement in the plane of the substrate is generally used. When trying to change the substrate angle (hereinafter referred to as the vapor deposition angle) with respect to the vapor deposition source with such a manipulator, for example, a mechanism for varying the tilt angle, which is created for structural analysis of the substrate surface by RHEED, is used. Methods such as expansion were taken.

[Problems to be solved by the device]

The conventional vacuum vapor deposition manipulator described above is provided with a mechanism for changing the tilt angle for structural analysis of the substrate surface when the vapor deposition angle is changed. However, a large tilt angle cannot be obtained, and in order to continuously rotate the substrate, it is necessary to introduce a rotational motion into the chamber by an external motor etc. It is difficult to maintain, and a large tilt angle can be obtained when the manipulator is attached from the side of the chamber, but adding a substrate rotation mechanism complicates the structure. Setting the substrate angle for multiple evaporation sources However, there is a drawback in that it is difficult to perform substrate transfer and substrate transfer at the growth level of the film because the moving distance in the vertical direction of the substrate becomes small.

The purpose of the present invention is to change the deposition angle largely, the mechanism is not complicated, it is easy to maintain a high vacuum state, the substrate angles can be easily set for a plurality of deposition sources, and the vertical movement distance is large. It is an object of the present invention to provide a manipulator for vacuum deposition, which makes it easy to deliver and transfer a substrate after growth.

[Means for solving the problem]

The vacuum evaporation manipulator of the present invention comprises a stepping motor for rotating a substrate holder on which a substrate is mounted around a straight line perpendicular to the substrate holder, and a substrate holder attachment point on or near the rotation axis of the stepping motor. And a substrate angle setting mechanism for rotating the rotation axis of the stepping motor in a plane perpendicular to the substrate holder about a point to set the angle of the substrate with respect to the vapor deposition source.

[Action]

The substrate holder on which the substrate is mounted is rotated by a stepping motor, and the rotation axis of the stepping motor is rotated in a plane perpendicular to the substrate holder, so that the vapor deposition angle is largely changed and the mechanism is not complicated. The deposition angle can be set by an operation from the outside, a high vacuum state can be easily maintained, and the vertical movement distance of the substrate can be increased.

〔Example〕

Next, an embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional front view of an essential part of an embodiment of a vacuum evaporation manipulator according to the present invention, and FIG. 2 is a side view of a part of FIG.
3 is a vertical cross-sectional view of a vacuum apparatus equipped with the vacuum evaporation manipulator of FIG. 1, FIG. 4 (a) is a front view of the substrate holder 2 of FIG. 1, and FIG. Substrate holder 2 of a)
5 is a graph showing the relationship between the rotation angle and the rotation speed of the substrate holder 2.

This vacuum evaporation manipulator comprises a flange 1, a substrate holder 2, bevel gears 4,5,6,7,8,9, gear shafts 10,11,12,13, a stepping motor 14, a tab 15, and a rotation introducing mechanism 16. Metal fittings 17
It is composed of a magnet 18, 19 and a motor mounting plate 20.

A metal fitting 17 is fixed to the rotation introducing mechanism 16 provided through the hole of the flange 1. The rotation introducing mechanism 16 has a gear shaft 10, and the gear shaft 10 is rotated by a magnet 19. The rotation of the gear shaft 10 is applied to the gear shaft 13 by the actions of the gear shafts 11, 12, 13 supported by the metal fittings 17 and the bevel gears 4, 5, ..., 9 attached to the gear shafts 11, 12, 13. Transmitted. A motor mounting plate 20 is fixed to the gear shaft 13, and the stepping motor 14 mounted on the motor mounting plate 20 is rotated about the gear shaft 13 in the arrow direction of FIG. Here, the stepping motor 14 is the Sukegawa Electric VM type or Sanyo Electric ST
EP-SYN type or other ultra-high vacuum type is used. The motor mounting plate 20 is adapted to rotate within a range of 90 ° by the claws 15 as shown in FIG. The substrate holder 2 is attached to the motor shaft of the stepping motor 14,
The film formation substrate 3 is held on the substrate holder 2. Therefore, when the gear shaft 10 rotates, the substrate holder 2 and the substrate 3 also move 90
It rotates about the gear shaft 13 in the range of °. Further, the substrate holder 2 and the substrate 3 rotate about the motor shaft when the stepping motor 14 rotates by an external operation. The portion described above corresponds to the substrate angle setting mechanism of claim 1 including the stepping motor. on the other hand,
The rotation introducing mechanism 16 is rotated by the magnet 18, and the rotation of the rotation introducing mechanism 16 causes the metal fitting 17 to rotate around the axis of the rotation introducing mechanism 16, so that the stepping motor 14 and the substrate holder 2 are rotated.
The movable part including is also rotated.

Although not shown in FIG. 1, this vacuum evaporation manipulator can be relatively easily added with a mechanism for moving the substrate holder 2 up and down.

Next, an operation for depositing a film-forming material on a substrate using this vacuum deposition manipulator will be described.

First, after holding the film formation substrate 3 in the substrate holder,
The rotation of the substrate holder 2 is performed by externally applying a pulse signal to the stepping motor 14. The deposition angle can be set by rotating the magnet 19 to rotate the gear shaft 10
By rotating the bevel gears 5, 6, 7, 8, and 9 in this order to transmit the rotational movement. In this case, since the stepping motor 14 rotates as shown in FIG. 2 as the magnet 19 rotates, the vapor deposition angle can be easily set between 0 and 90 °.

FIG. 3 shows an example in which a vacuum evaporation manipulator is attached to a vacuum apparatus having a plurality of evaporation sources, and k-cell 2
2, 23 are mounted in the vacuum chamber 21. In order to set the orientation of the substrate with respect to each of the k-cells 22 and 23, the magnet 18 of the vacuum deposition manipulator 24 is rotated to rotate the rotation introducing mechanism 16 to move the substrate holder 2 to the K-cell 22 or Turn to direction 23.

Next, a specific example of the effect of the vacuum evaporation manipulator of the present embodiment will be described.

Specific Example 1 The following vapor deposition operation was performed in the vacuum apparatus of FIG.

Vapor deposition operation 1: A glass substrate with an ITO electrode was fixed on the substrate holder 2, and the magnet 19 was rotated to set the angle so that the incident angle of the film forming substrate with respect to the k-cell 22 was 0 °. The pulse applied to the stepping motor 14 was adjusted so that the substrate could rotate at a constant speed of 20 rpm. While maintaining the degree of vacuum in the vacuum chamber 21 at 10 ⁻⁶ torr or less, the granular SiO previously loaded in the k-cell 22 was heated to sublimate and vapor-deposited on the substrate. When the film thickness reached 500Å, evaporation was stopped once.

Vapor deposition operation 2: Following the vapor deposition operation 1, the magnet 19 was rotated to set the incident angle to 80 °. Further, by adjusting the pulse applied to the stepping motor 14, the substrate is rotated at 20 rpm, and the point X of the substrate holder 2 shown in FIG.
When the k-cell direction was set to 0 °, the method of applying the pulse was set so as to make the rotational movement as shown in FIG. Vacuum chamber
While keeping the degree of vacuum inside 21 at 10 ^-6 torr or less, SiO was heated to sublimate, and 500 Å of spin-weighted oblique evaporation film having a column structure was deposited on the substrate.

The two glass substrates with ITO electrodes that had been subjected to the above operations were laminated to form a liquid crystal cell with the same vapor deposition direction and a gap of 2 μm, and the ferroelectric liquid crystal composition ZLI manufactured by Merck was used.
After injecting −4000, the resistance value between the two electrodes, the presence or absence of the memory property, and the contrast (ratio of light transmittance in the bright state and the dark state) were measured. The results are shown in Table 1 together with the sample without the vapor deposition operation 1 (Comparative Example 1) and the sample with the vapor deposition angle between the vapor deposition operation 1 and the vapor deposition operation 2 being changed in the atmosphere (Comparative Example 2).

In Table 1, the concrete example shows that the resistance value between two electrodes is "1 MΩ.
Or more ”, the presence / absence of the memory property is“ present ”and the contrast is“ 50 ”, which indicate that the results are good.

The low resistance value of the liquid crystal cell of Comparative Example 1 in Table 1 is because the vapor deposition film of the vapor deposition operation 2 has a column structure and thus the liquid crystal composition is in direct contact with the ITO electrode. Therefore, it is understood that it is necessary to perform the vapor deposition operation 1 before the vapor deposition operation 2. However, when the vapor deposition angle is set in the atmosphere as in Comparative Example 2, the liquid crystal cell of the liquid crystal cell is adhered due to the attached conductive dust. It is considered that the resistance value becomes smaller. When the manipulator of this embodiment is used, the vapor deposition operations 1 and 2 can be continuously performed in a high vacuum, so that the substrate is not contaminated by the atmosphere and good results can be obtained.

Specific Example 2 The following vapor deposition operation was performed in the same vacuum apparatus as in Specific Example 1.

Vapor deposition operation 1: A quartz glass substrate was fixed on the substrate holder 2, and the magnet 19 was rotated so that the angle of the vapor deposition substrate with respect to the k-cell 22 was 80 °, and the angle was set. Also,
When the pulse applied to the stepping motor 14 is adjusted, the substrate is rotated at 20 rpm, and the point X of the substrate holder 2 shown in FIG. 4 (a) is set to 0 ° in the k-cell direction. The method of applying the pulse was set so as to make the rotational movement as shown in FIG. Keep the degree of vacuum in the vacuum vessel 21 below 10 ^-6 torr,
The SiO was heated to sublimate it, and a 500 Å rotation-weighted oblique evaporation film having a column structure was deposited on the substrate, and the evaporation was once stopped.

Vapor deposition operation 2: Subsequent to vapor deposition operation 1, the magnets 18, 19 are arranged so that the angle of the vapor deposition substrate with respect to the k-cell 23 is 20 °.
Was rotated to set the angle. Further, the pulse applied to the stepping motor 14 was adjusted, and the method of applying the pulse was set so that the substrate rotated at 20 revolutions per minute. Vacuum chamber
Keep the degree of vacuum in 21 at 10 ^-6 torr or less, and k-
NKV-202 (manufactured by Kanto Chemical Co., Inc.) loaded in cell 23
00Å Accumulated.

The second-order nonlinear optical constant and the degree of polarization of the vapor-deposited film subjected to the above operations were measured. The results are shown in Table 2 together with the sample without the vapor deposition operation 1 (Comparative Example 3) and the sample with the vapor deposition angle between the vapor deposition operation 1 and the vapor deposition operation 2 being changed in the atmosphere (Comparative Example 4).

In Table 2, in Concrete Example 2, the second-order nonlinear optical constant (SHG) is “2 × 10 ⁻⁹ esu” and the polarization degree is “0.85”, and both show good results. The poor result in Comparative Example 3 indicates the necessity of the substrate undertreatment of the nonlinear optical material by the vapor deposition operation 1, but even when the vapor deposition operation 1 and the vapor deposition operation 2 of the nonlinear optical material are performed, the results are When the setting of the vapor deposition angle is changed in the atmosphere, sufficient results cannot be obtained for both the second-order nonlinear optical constant and the degree of polarization as shown in Comparative Example 4.
According to the manipulator of this embodiment, the vapor deposition operations 1 and 2 can be continuously performed in a high vacuum, so that the characteristics can be improved as shown in Table 2.

[Effect of device]

As described above, according to the present invention, the substrate holder is rotated by the stepping motor, and the rotation axis of the stepping motor is rotated in the plane perpendicular to the substrate holder. In addition, the deposition angle can be set and changed while maintaining a high vacuum state, so that a film-forming substrate with excellent characteristics can be obtained.Furthermore, it is easy to set the substrate angle for multiple evaporation sources and to deliver and transfer the substrate after film formation. There is an effect that can be implemented in.

[Brief description of drawings]

1 is a sectional front view of an essential part of an embodiment of a vacuum evaporation manipulator of the present invention, FIG. 2 is a side view of a portion of FIG. 1, and FIG. 3 is a vacuum evaporation manipulator of FIG. FIG. 4 (a) is a vertical cross-sectional view of the vacuum device shown in FIG.
FIG. 5B is a side view of the substrate holder 2 in FIG. 5A, and FIG. 5 is a graph showing the relationship between the rotation angle and the rotation speed of the substrate holder 2. 1 ... Flange, 2 ... Board holder, 3 ... Board, 4,5,
6,7,8,9 …… Bevel gear, 10,11,12,13 …… Gear shaft, 14 …… Stepping motor, 15 …… Claw, 16 …… Rotation introduction mechanism,
17 ... Metal fittings, 18, 19 ... Magnet, 20 ... Motor mounting plate, 21 ... Vacuum tank, 22, 23 ... K-cell, 24 ... Manipulator for vacuum deposition.

Claims (2)

[Scope of utility model registration request] 1. A vacuum deposition manipulator attached to a vacuum chamber for causing a substrate to deposit a film forming material by a vapor deposition source in the vacuum chamber, comprising: a substrate holder on which the substrate is mounted; A stepping motor that rotates about a straight line perpendicular to the center of the stepping motor rotation axis of the substrate holder attachment point or a point in the vicinity thereof in a plane perpendicular to the substrate holder. A manipulator for vacuum vapor deposition, comprising: a substrate angle setting mechanism that rotates and sets an angle of the substrate with respect to the vapor deposition source. 2. The manipulator for vacuum deposition according to claim 1, further comprising a mechanism for changing a plane on which a rotation shaft of the stepping motor is rotated.