JPH0837253A - Semiconductor device, manufacturing method thereof, and mounting method - Google Patents

Abstract

(57) [Abstract] [Purpose] To obtain a highly versatile semiconductor device having high reliability such as moisture resistance and capable of high-density mounting, a manufacturing method thereof, and a mounting method. [Structure] A tape 9 provided on a semiconductor chip 2 and having a conductor layer 10, a thin metal wire 11 for electrically connecting a bonding pad 3 which is an electrode provided on the semiconductor chip 2 and the conductor layer 10. Semiconductor chip 2, conductor layer 1
0, the tape 9 and the sealing resin 6 for sealing the metal thin wires 11 with a resin, and the solder bumps 5 which are external electrodes connected to the conductor layer 10 through the openings 12 provided in the sealing resin 6. It consists of.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a method of manufacturing the same, and a method of mounting the same, and more particularly, to a surface mount type package of a semiconductor device capable of high density mounting.

[0002]

2. Description of the Related Art In recent years, high-density mounting and surface mounting of semiconductor devices have been advanced, and many technologies related thereto have been proposed. For example, in surface mounting, instead of mounting using leads up to now, there is a metal protruding electrode called a bump used when mounting a semiconductor chip directly on a substrate, and this is remelted (reflowed). The mounting method is applied to a resin-sealed semiconductor device.

As an example of such surface mounting, FIG.
29 is an external view showing a partial cross section of a conventional semiconductor device disclosed in, for example, Japanese Patent Laid-Open No. 1-179334.
FIG. 29 is a cross-sectional view showing FIG. 28 taken along the line gg ′. In the figure, 1 is a semiconductor device, 2 is a semiconductor chip,
3 is a bonding pad as an electrode provided on the semiconductor chip, 4 is a connecting conductor attached to the semiconductor chip 2, 5 is a solder chip provided on the conductor 4, and 6 is the semiconductor chip 2 protected from the ambient environment. This is a sealing resin for sealing.

In this semiconductor device 1, the periphery of the semiconductor chip 2 is sealed with a sealing resin 6 to protect the semiconductor chip 2 from the external environment, and at the same time, the thickness of the sealing resin 6 is made as thin as possible. The volume is reduced to achieve high-density mounting. In addition, there is a package called BGA (Bump / Grid / Array) as a package for mounting a semiconductor device using bumps, which is currently the Japan Electronic Machinery Manufacturers Association (EIAJ).
Standardization is in progress. An example of this BGA package is that of Tessera, Inc. of the United States, which is a package in which a circuit film having bumps arranged in a grid pattern on a semiconductor chip is adhered and electrically connected (Tessera's).
See Compliant Chip TM Technology).

Further, as a method for high-density mounting in a semiconductor device, particularly a memory IC, there is a package called ZIP (Zigzag In-like Package) as shown in FIGS. 30 and 31, and mounting per mounting area is performed. It was used as a method of increasing the density. FIG. 30 is an external view of the ZIP, and FIG. 31 is a side view thereof. In the figure, 7 is an external lead outside the sealing resin 6 among the leads electrically connected to the bonding pad 3. .

However, since the ZIP is a through-hole mounting type (a type in which a hole is formed in a board and external leads of a semiconductor device are inserted and mounted), it cannot be mounted on both sides of the board, and the recent surface It is no longer used due to the flow of implementation. Then, a new proposal in place of this ZIP is SVP (Saface Ver.) As shown in FIGS.
It is a semiconductor device having an upright surface mount type package called tical package. Figure 32 is an outline drawing of the SVP,
33 is a side view seen from the direction h in FIG. 32, and FIG.
32 is a cross-sectional view taken along the line j-j ′ in FIG. 32, in which 8 is longer than a normal external lead 7 for standing SVP, and is in the same direction as the external lead 7 and in the opposite direction. It is a bent stand lead.

Further, as a conventional method for increasing the density of a semiconductor device, there is a semiconductor device as shown in FIG. 35, for example, disclosed in Japanese Patent Laid-Open No. 5-309983. Since this semiconductor device is a semiconductor device for a memory card and uses the wire bonding method, in the case of the resin-sealed semiconductor device 46 with the upward lead shown in FIG. 35B, the upward lead 47 and the resin-sealed portion 43. The height difference of the wire 42 on the semiconductor chip 40 from the resin sealing surface of the semiconductor chip 40 is about 2
00 μm, the minimum resin thickness of the resin sealing portion 43 on the wire 42 is 50 μm, and the margin due to warpage of the package is about 5
Even if it is estimated to be 0 μm, the minimum is 300 μm.

Further, in the case of the resin-sealed semiconductor device 44 with the downward lead shown in FIG. 35A, the wire 42 and the semiconductor chip 4 are used.
In order to prevent a short circuit at the end of 0, the downward lead 45 needs to be shifted from the die pad 41 to the active surface (upper surface) of the semiconductor chip 40 by about 200 μm. Furthermore, die pad 4
Since the resin thickness of the resin sealing portion 43 below 1 is 200 μm, the step difference between the downward lead 45 and the resin sealing surface of the semiconductor chip 40 by the resin sealing portion 43 is about 400.
μm, which is larger than that of the upward lead 47 in FIG. 35B.

[0009]

Since the conventional semiconductor device is constructed as described above, it has the following problems. That is, first, in the case of the semiconductor device disclosed in Japanese Patent Application Laid-Open No. 1-17933 (FIGS. 28 and 29), the distance between the solder bump 5 and the bonding pad 3 which is an electrode on the semiconductor chip 2 is short, and Since the adhesion between the sealing resin 6 and the metal such as the solder bumps 5 and the connecting conductors 4 is poor, water penetrates through the interface between the sealing resin 6 and the solder bumps 5 and the connecting conductors 4, and the bonding pad 3 is removed. There is a problem that the semiconductor device 1 is corroded and becomes defective.

Further, since the solder bumps 5 and the bonding pads 3 correspond to each other on a one-to-one basis, the number of solder balls (not shown) for forming the solder bumps 5 must be the same as the number of the bonding pads 3. There is a problem in that it is impossible to share the power supply electrode or the ground electrode and to form a circuit in the semiconductor device 1. Further, when the electrodes on the semiconductor element are bonded to the external connection lead pattern on the substrate, it is difficult to align the lead pattern sandwiched between the semiconductor element and the base substrate with the electrodes on the semiconductor element. was there.

Further, a circuit film having bumps arranged in a grid pattern on a semiconductor chip is adhered and electrically connected to a BG.
In the case of the package A, since the semiconductor chip is in contact with the external environment through the circuit filter and is not coated with the sealing resin, the material of the circuit filter, especially the elastomer (elastic body) and the circuit (not shown) are Increase the purity of the adhesive that bonds the constituent metal conductors and PI (polyimide) film,
It is necessary to eliminate impurities (chlorine ions, etc.) that corrode the bonding pad. Also, the elastomer,
Since the PI film easily absorbs moisture, if the water absorption rate of these materials is not reduced as much as possible, when the solder bumps are reflowed during the mounting of the semiconductor device, the elastomer and the moisture in the PI film are explosively vaporized, and the elastomer layer and PI film There have been problems that the film may be cracked, or the conductor may be broken in some cases.

Further, in the case of a semiconductor device having an SVP (FIGS. 32 to 34), it is connected to a substrate (not shown) by the external lead 7, but since the strength of the external lead 7 is required, the lead is required. Thickness is 0.125mm, lead width is 0.2
5mm required, resulting in a lead pitch of 0.5mm
The above is required, and particularly in the case of a multi-pin package (multi-lead package), the length of the side where the external lead 7 of the semiconductor device is exposed to the outside is limited by the length of the lead. There was a problem that the size became large. The external lead 7 of the SVP is L on the bottom surface of the package.
It is bent in a letter shape, and the bent part (part k in FIG. 34)
Has a length of 0.65 to 1.20 mm. Therefore, since the length of the external leads 7 is considerably long, when the semiconductor device 1 is warped due to the eccentricity of its vertical structure, the lead width is apparently increased, and it is difficult to widen the lead pitch of the external leads 7. There was a problem such as becoming.

Further, when mounting the surface-mounting type semiconductor device on a substrate, solder paste is usually printed by a screen printing method, and after the soldering paste is adhered to the leads of the surface-mounting type semiconductor device to be mounted. The solder in the solder paste is melted and connected by reflow. In this case, the maximum thickness of the solder paste is almost equal to the thickness of the screen mask, and the currently used screen mask has a thickness of 200 μm. is there. Therefore, in the case of the semiconductor device disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 5-309983 (FIG. 35), a step (minimum 3) between the substrate and the lead during mounting.
Since the thickness (00 μm) is larger than the thickness (200 μm) of the solder paste, there is a problem in that the leads cannot be joined to the solder, that is, surface mounting alone is impossible.

As a countermeasure against this, it is conceivable to make the thickness of the screen mask 300 μm or more. In this case, however, the thickness of the solder becomes thicker and the solder printing width becomes wider, that is, the opening of the screen mask. Since the width of the screen mask is required even if the width is the minimum, it is used in packages such as multi-pin QFP (Quad / Flat / Package), which has a small lead pitch and has leads extending from the four sides of the case. mm lead pitch semiconductor device and narrow pitch TSOP (Thin / Small / Outline / Packa)
ge), which has leads extending from the two sides of the case and a semiconductor device with a 0.65 mm lead pitch such as QFP, has too much solder and leads to a solder bridge between leads, resulting in a short circuit failure. Therefore, there is a problem that versatility is lost.

The present invention has been made to solve the above problems, and has a versatile semiconductor device having high reliability such as moisture resistance and capable of high-density mounting, and a manufacturing method and mounting method thereof. Aim to get.

[0016]

According to another aspect of the present invention, there is provided a semiconductor device in which an adhesive member provided on a semiconductor chip and having a conductor layer, an electrode provided on the semiconductor chip, and a conductor layer are electrically connected. To the semiconductor chip, the conductor layer, the adhesive member and the connecting member with a sealing member, and an external electrode connected to the conductor layer through an opening provided in the sealing member. It is equipped with.

According to a second aspect of the present invention, there is provided a semiconductor device comprising: an adhesive member provided on a semiconductor chip and having a conductor layer; and a connecting member electrically connecting the electrode provided on the semiconductor chip and the conductor layer. A metal protrusion provided on the conductor layer,
A semiconductor chip, a conductor layer, an adhesive member, a connecting member, and a sealing member that seals the metal protrusion with resin and exposes the metal protrusion to the outside, and an external electrode connected to the metal protrusion exposed to the outside. It is a thing.

A semiconductor device according to a third aspect of the present invention is the semiconductor device according to the first or second aspect, wherein the adhesive member has a comb-shaped conductor layer connected to an electrode provided on the semiconductor chip.

A semiconductor device according to a fourth aspect of the present invention is the semiconductor device according to the second aspect, wherein a recess is provided around a portion of the sealing member where the metal protrusion is exposed, and the recess has a portion of the external electrode. It is a bite.

A semiconductor device according to a fifth aspect of the present invention is the semiconductor device according to the third aspect, wherein the comb-shaped conductor layer is used as a power supply or ground potential wiring.

A semiconductor device according to a sixth aspect of the present invention electrically connects an adhesive member provided on one side of a semiconductor chip and having a conductor layer to an electrode and a conductor layer provided on the other side of the semiconductor chip. Connecting member, semiconductor chip, conductor layer,
And a sealing member that seals the adhesive member and the connecting member with resin and exposes one side of the conductor layer to the outside.

A semiconductor device according to a seventh aspect of the present invention is the semiconductor device according to the sixth aspect, further comprising a supporting member provided on the sealing member so as to project in a direction perpendicular to the active surface of the semiconductor chip.

According to another aspect of the present invention, there is provided a semiconductor device, wherein a conductive basic member is provided separately from the semiconductor chip, and an adhesive member is provided on the basic member and has a conductor layer.
The semiconductor chip, the basic member, the conductor layer, the adhesive member and the connecting member are resin-sealed with the connecting member electrically connecting the first and second electrodes provided on the semiconductor chip to the conductor layer and the basic member, respectively. In addition, at least the basic member and the sealing member that exposes one side of the conductor layer to the outside are provided.

According to a ninth aspect of the present invention, there is provided a semiconductor device, wherein a conductive basic member is provided separately from the semiconductor chip, and a conductive annular member is provided apart from the semiconductor chip and provided around the basic member. , An adhesive member provided on the basic member and having a conductor layer, and first and second adhesive members provided on the semiconductor chip.
And a connection member for electrically connecting the third electrode to the conductor layer, the basic member and the annular member, respectively, and a semiconductor chip, the basic member, the annular member, the conductor layer, the adhesive member and the connection member are resin-sealed and at least And a sealing member that exposes one side of the conductor layer to the outside.

According to a tenth aspect of the invention, in the semiconductor device according to the eighth or ninth aspect, the basic member exposed from the sealing member is used for supporting.

A semiconductor device according to an eleventh aspect of the present invention is the semiconductor device according to the eighth aspect, wherein the conductor layer is exposed by about 0.2 to 1.0 mm from the sealing member.

A semiconductor device according to a twelfth aspect of the present invention is the semiconductor device according to the eighth aspect, wherein the conductor layer exposed from the sealing member is used as a hinge when connecting to the wiring on the board during mounting. is there.

A semiconductor device according to a thirteenth aspect of the present invention is the semiconductor device according to the eighth aspect, wherein the basic member is used for ground potential.

A semiconductor device according to a fourteenth aspect of the present invention is the semiconductor device according to the eighth aspect, wherein the surface of the basic member on the electrode side is exposed and the exposed portion is wire-bondable.

A semiconductor device according to a fifteenth aspect of the present invention is the semiconductor device according to the eighth aspect, wherein a groove is provided in a portion of the sealing member where the basic member is exposed.

A semiconductor device according to a sixteenth aspect of the present invention is the semiconductor device according to any of the eighth to fifteenth aspects, wherein the basic member and the annular member are arranged at positions facing each other with the electrode interposed therebetween.

A semiconductor device according to a seventeenth aspect of the present invention is the semiconductor device according to the eighth aspect, wherein the basic member and the annular member are
It is used as a wiring for power supply or ground potential.

A semiconductor device according to an eighteenth aspect of the present invention is the semiconductor device according to the eighteenth to seventeenth aspects, wherein one side of the basic member has a comb shape in which portions other than the portions facing the adhesive member and the conductor layer are removed. .

According to a nineteenth aspect of the present invention, in a semiconductor device, an adhesive member provided on a semiconductor chip and a wiring member extending from the adhesive member and electrically connected to an electrode provided on the semiconductor chip. And a sealing member for sealing the semiconductor chip, the adhesive member and the wiring member with a resin, and an external electrode connected to the wiring member through an opening provided in the sealing member.

A semiconductor device according to a twentieth aspect of the present invention is an adhesive member provided on a semiconductor chip, and a wiring member extending from the adhesive member and electrically connected to an electrode provided on the semiconductor chip. And a sealing member that seals the semiconductor chip, the adhesive member, and the wiring member with resin and exposes one side of the wiring member to the outside with a predetermined step.

The semiconductor device according to the invention of claim 21 is the semiconductor device according to claim 19 or 20, wherein the adhesive member is TAB.
It is a tape.

A semiconductor device according to a twenty-second aspect of the present invention is the semiconductor device according to the nineteenth or twentieth aspect, wherein the adhesive member is TAB.
This is a tape, and the wiring member on the TAB tape is used as an external electrode.

A semiconductor device according to a twenty-third aspect of the present invention is the semiconductor device according to the twenty-third aspect of the present invention, wherein the sealing member has a positioning recess for fitting with the wiring of the substrate at a portion which is in contact with the substrate during mounting. .

A semiconductor device according to a twenty-fourth aspect of the present invention is the semiconductor device according to the twenty-third aspect of the present invention, wherein the sealing member is a relief recess for preventing interference with a through hole or the like on the substrate at a portion facing the substrate during mounting. Is to have.

According to a twenty-fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including a step of adhering an adhesive member having a conductor layer on a semiconductor chip, a step of forming electrodes on the semiconductor chip.
A step of electrically connecting the electrode and the conductor layer, a step of resin-sealing the semiconductor chip, the conductor layer, and an adhesive member, a step of forming an opening reaching the conductor layer in the sealing resin, and an opening And filling the portion with solder to form an external electrode.

According to a twenty-sixth aspect of the present invention, in the semiconductor device manufacturing method according to the twenty-fifth aspect of the present invention, the openings are formed by projections provided on a mold for resin sealing.

According to a twenty-seventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the twenty-fifth aspect or the twenty-sixth aspect of the present invention, the protrusion provided on the mold for resin-sealing the opening has a predetermined depth in the conductor layer. The semiconductor chip and the adhesive member are placed in a mold so that they are only pushed in, and are resin-sealed.

According to a twenty-eighth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the twenty-fifth to twenty-seventh aspects of the present invention, in which the semiconductor chip and the adhesive member are held in positions to be set in a mold.
The cross-linking portion of the adhesive member is sandwiched between molds.

According to a twenty-ninth aspect of the present invention, in the method of manufacturing a semiconductor device according to the twenty-fifth to twenty-eighth aspects, solder balls are placed in the openings and the external electrodes are formed by reflow.

According to a thirtieth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, which comprises a step of attaching an adhesive member having a conductor layer on a semiconductor chip, a step of forming an electrode on the semiconductor chip, an electrode and a conductor layer. Electrically connecting the semiconductor chip, the step of forming metal projections on the conductor layer by a wire bonding method, the semiconductor chip, the conductor layer, the adhesive member and the metal projections are resin-sealed and the metal projections are partially exposed to the outside. And a step of forming an external electrode connected to the metal protrusion exposed to the outside.

According to a thirty-first aspect of the present invention, in the method of manufacturing a semiconductor device according to the thirtieth aspect, in the step of exposing a part of the metal projection to the outside, the height of the metal projection is determined by the uncut amount of the metal projection. Is adjusted, and the adjusted metal protrusion is resin-sealed so as to be pressed against a resin-sealing mold at the time of resin-sealing to expose a part of the metal protrusion.

According to a thirty-second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including a step of attaching an adhesive member having a conductor layer on one side of a semiconductor chip, a step of forming an electrode on the other side of the semiconductor chip, and an electrode. And a step of electrically connecting the conductor layer,
And the step of sealing the semiconductor chip, the conductor layer and the adhesive member with resin and exposing one side of the conductor layer to the outside.

According to a thirty-third aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including a step of disposing a conductive basic member apart from a semiconductor chip, and a step of adhering an adhesive member having a conductor layer on the basic member. A step of forming first and second electrodes on a semiconductor chip, a step of electrically connecting the first and second electrodes to a conductor layer and a basic member, respectively, a semiconductor chip, a basic member, and a conductor layer And a step of sealing the adhesive member with resin and exposing at least the basic member and one side of the conductor layer to the outside.

According to a thirty-fourth aspect of the present invention, in a method of manufacturing a semiconductor device, a step of disposing a conductive basic member apart from a semiconductor chip, and a conductive annular member spaced from the semiconductor chip and surrounding the basic member. Arranging, a step of adhering an adhesive member having a conductor layer on the basic member, a step of forming first, second and third electrodes on the semiconductor chip, and first, second and third Electrically connecting the electrode and the conductor layer, the basic member and the annular member, respectively, and sealing the semiconductor chip, the basic member, the annular member, the conductor layer and the adhesive member with a resin, and at least the basic member, the annular member and And a step of exposing one side of the conductor layer to the outside.

A method of manufacturing a semiconductor device according to a thirty-fifth aspect of the present invention comprises a step of attaching an adhesive member on a semiconductor chip,
A step of forming an electrode on the semiconductor chip, a step of electrically connecting the electrode and a wiring member extending from the adhesive member, a step of resin-sealing the semiconductor chip, the adhesive member and the wiring member, and a sealing resin And a step of forming an external electrode by filling the opening with solder and forming an external electrode.

According to a thirty-sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising a step of attaching an adhesive member on a semiconductor chip,
A step of forming an electrode on the semiconductor chip, a step of electrically connecting the electrode and a wiring member extending from the adhesive member, and an electrode electrically extending from the adhesive member and provided on the semiconductor chip. The method includes a wiring member to be connected, a step of resin-sealing the semiconductor chip, the adhesive member and the wiring member and exposing one side of the wiring member to the outside with a predetermined step.

According to a thirty-seventh aspect of the present invention, in a method for mounting a semiconductor device, the semiconductor device is arranged perpendicular to a substrate, and a conductor layer on an adhesive member attached to one side of a semiconductor chip in the semiconductor device is provided. It is designed to be electrically connected to the wiring of the substrate.

In the semiconductor device mounting method according to a thirty-eighth aspect of the present invention, another semiconductor device adjacent to a groove portion which is not used for bending the basic member among the groove portions provided in the resin-sealed portion of the semiconductor device is provided. The support member of (1) is embedded in the mounting member.

According to a 39th aspect of the present invention, in a method for mounting a semiconductor device, resin is sealed so that an adhesive member to which a wiring member is attached is exposed on a resin surface on a semiconductor chip surface side of the semiconductor device. The wiring member on the adhesive member is mounted so as to face the substrate, and the wiring member on the adhesive member is electrically connected to the wiring on the substrate. It was done like this.

[0055]

According to the first aspect of the present invention, the periphery of the semiconductor chip and the adhesive member on the semiconductor chip is sealed to improve moisture resistance, and the external electrodes and the electrodes on the semiconductor chip are lengthened to form a sealing resin. The progress of moisture that penetrates through the interface with the built-in adhesive member, the conductor layer thereon, the connecting member, etc. is suppressed, and the moisture resistance is further improved. Further, the packaging density can be improved and the size can be reduced.

According to the second aspect of the present invention, the periphery of the semiconductor chip and the adhesive member on the semiconductor chip is sealed to improve the moisture resistance, and the external electrodes and the electrodes on the semiconductor chip are lengthened to form a sealing resin. Adhesive member built in, conductor layer on it,
The progress of moisture that has entered the interface with the connecting member and the like is suppressed, and the moisture resistance is further improved. Further, the packaging density can be improved and the size can be reduced.

In the third aspect of the invention, since the adhesive member has the comb-shaped conductor layer, it is possible to transmit the signal from the external electrode to various electrodes on the semiconductor chip.

In the invention of claim 4, since the recess is provided in the portion of the sealing member where the metal projection is exposed, the solder flows into the recess when the external electrode is formed, and the sealing resin and the solder mechanically mesh with each other. The connection between the solder, the sealing resin, and the external electrode and the metal protrusion can be strengthened.

In the invention of claim 5, since the comb-shaped conductor layer can be used for supplying power and for grounding, it is not necessary to lay out the wiring in the semiconductor chip, and the wiring suppresses an increase in inductance and the semiconductor device. It is possible to speed up the operation of.

According to the sixth aspect of the invention, the mounting density can be improved by vertical mounting.

According to the seventh aspect of the invention, since the semiconductor device can be erected vertically with respect to the substrate by the supporting member, the mounting becomes easy, and the mountability and the self-supporting property can be improved.

In the eighth aspect of the invention, since the periphery of the semiconductor chip is covered with the sealing resin having a relatively strong adhesive force and a low water absorption rate, the water absorbed by the heat during mounting explodes. The interface peeling and the resulting breakage of the connecting member are less likely to occur, and the reliability of the product is improved.

According to the invention of claim 9, it is not necessary to lay out the wiring in the semiconductor chip, the wiring suppresses the increase of the inductance, and the operation speed of the semiconductor device can be increased, thereby improving the electric characteristics.

In the tenth aspect of the invention, since the basic member is used for supporting, the self-supporting property of the semiconductor device can be improved.

In the eleventh aspect of the invention, since the conductor layer is exposed from the sealing member, the conductor layer and the wiring of the substrate can be easily connected, and the open defect due to soldering can be prevented.

According to the twelfth aspect of the invention, since the conductor layer can be used as a hinge, the mountability and reliability can be improved.

According to the thirteenth aspect of the present invention, since the basic member can be used for ground potential, it is not necessary to route the wiring within the semiconductor chip, and the wiring suppresses an increase in the inductance, and the semiconductor device operates at high speed. Can be realized.

According to the fourteenth aspect of the present invention, since the exposed portion of the basic member can be wire-bonded, it is not necessary to route the wiring within the semiconductor chip, and the wiring suppresses an increase in inductance, and the semiconductor device operates at high speed. It is also possible to improve the electrical characteristics and simplify the manufacturing method.

According to the fifteenth aspect of the present invention, since the groove portion is provided in the exposed portion of the basic member of the sealing member, the mounting pitch of the semiconductor device can be reduced, high density mounting can be performed, and the mountability can be improved. Can be improved.

According to the sixteenth aspect of the present invention, since the basic member and the annular member are arranged with the electrodes sandwiched therebetween, the wiring within the semiconductor chip is shortened and the signal delay within the semiconductor chip is reduced. The wiring reduces the amount of inductance, speeding up the operation of the semiconductor device, and improving electrical characteristics.

In the seventeenth aspect of the invention, since the basic member and the annular member can be used for power supply and grounding, the wiring within the semiconductor chip is shortened and the signal delay within the semiconductor chip is reduced. In addition, the wiring reduces the amount of inductance, enabling faster operation of the semiconductor device.
The electrical characteristics can be improved.

According to the eighteenth aspect of the present invention, since one side of the basic member is formed in a comb shape, the adhesion between the sealing resin and the basic member is improved, the ingress of water is suppressed, and the deterioration of moisture resistance is prevented. it can.

According to the nineteenth aspect of the invention, it is possible to reduce the size of the semiconductor device, improve the packaging density, and improve the reliability.

According to the twentieth aspect of the invention, the semiconductor device can be downsized, the packaging density can be improved, and the reliability can be improved.

According to the twenty-first aspect of the invention, since the TAB tape is used as the adhesive member, it is possible to contribute to miniaturization of the semiconductor device.

According to the twenty-second aspect of the present invention, since the TAB tape is used as the adhesive member and the wiring member on the TAB tape can be used as the external electrode, the thickness of the sealing resin can be reduced.

In the twenty-third aspect of the invention, since the positioning recess is provided in the sealing member, the wiring process is facilitated and the mountability is improved.

According to the twenty-fourth aspect of the invention, since the escape recess is provided in the sealing member, it is possible to perform self-alignment in which the sealing member moves from a position roughly aligned with the positioning recess to an appropriate mounting position.

In the twenty-fifth aspect of the invention, the manufacturing process can be simplified.

In the twenty-sixth aspect of the invention, the opening is formed by utilizing the protrusion of the resin-sealing die, so that the manufacturing becomes easy.

According to the twenty-seventh aspect of the present invention, it is possible to prevent the occurrence of the sealing resin burr on the conductor layer and impair the conductivity between the conductor layer and the external electrode.

According to the twenty-eighth aspect of the present invention, since the bridge portion of the adhesive member is sandwiched between the molds when the semiconductor chip and the adhesive member are positioned, manufacturing is facilitated.

According to the twenty-ninth aspect of the invention, since the external electrodes are formed by placing the solder balls in the openings, the manufacturing process can be simplified.

According to the thirtieth aspect of the invention, the size of the semiconductor device can be reduced by a simple manufacturing process.

In the thirty-first aspect of the invention, since the height of the metal protrusion can be adjusted and a part thereof can be exposed, the manufacturing process is simplified.

According to the thirty-second aspect of the invention, the size of the semiconductor device can be reduced and the packaging density can be improved by a simple manufacturing process.

According to the invention of claim 33, a highly reliable semiconductor device can be obtained by a simple manufacturing process.

According to the thirty-fourth aspect of the present invention, a semiconductor device having excellent electric characteristics can be obtained by a simple manufacturing process.

According to the thirty-fifth aspect of the invention, the size of the semiconductor device can be reduced and the packaging density can be improved by a simple manufacturing process.

According to the thirty-sixth aspect of the invention, the semiconductor device can be downsized and the packaging density can be improved by a simple manufacturing process.

In the thirty-seventh aspect of the invention, the packaging density can be improved.

According to the thirty-eighth aspect of the present invention, high-density mounting is possible.

According to the thirty-ninth aspect of the present invention, high-density mounting is possible.

[0094]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. Example 1. 1 to 4 show a first embodiment of the present invention, FIG. 1 is an external view showing a partial cross section of a semiconductor device according to the present invention, and FIG. 2 is a portion taken along line aa 'in FIG. FIG. 3 is a cross-sectional view taken by cutting, FIG. 3 is a cross-sectional view before forming solder bumps in a manufacturing step of a semiconductor device according to the present invention, and FIG. It is an external view, and in each drawing, portions corresponding to those in FIGS. 28 to 29 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the figure, 1A is a semiconductor device according to the present embodiment, and 9
Is a tape as an adhesive member adhered to the semiconductor chip 2, 10 is a conductor layer formed on the tape 9, 11 is a fine metal wire as a connecting member for wire bonding, and 12 is a resin sealing at the time of resin sealing. An opening portion of the sealing resin 6 as a sealing member, which reaches the conductor layer 10 on the tape 9 formed by a mold (not shown), and 13 is a bridging portion forming a part of the tape 9.

As shown in FIGS. 1 and 2, the semiconductor device 1A has a tape 9 adhered to the semiconductor chip 2, and the conductor layer 10 formed on the tape 9 and the semiconductor chip 2 are provided.
The bonding pad 3 serving as an upper electrode is provided with a thin metal wire 11.
Wire bonding to expose a part of one surface of the conductor layer 10 in the sealing resin 6 as shown in FIG.
2 is provided. The opening 12 pushes the protrusion provided on the corresponding portion of the resin-sealed portion of the resin-sealed mold used in the resin-sealed step, which is a step in the manufacturing process of the semiconductor device 1A, onto the conductor layer 10 on the tape 9. Form by applying. Then, the solder bumps 5 as external electrodes are formed in the openings 12.

The protrusions of the resin-sealing die are designed so that the conductor layer 10 on the tape 9 is pushed into the resin-sealing die by, for example, about 5 to 100 μm, preferably several tens of μm. It is devised so that burrs of the sealing resin 6 do not occur and the conductivity between the conductive layer 10 and the solder bumps 5 is not impaired. Therefore, the stress due to the protrusion of the resin-sealing mold pushing the conductive layer 10 is absorbed by the elasticity of the tape 9, and the semiconductor chip 2 is not damaged.

Further, when the solder bumps 5 are formed on substantially the intermediate product of the semiconductor device 1A of FIG. 3, solder balls (not shown) are arranged in the openings 12 and reflowed, so that the same resin sealing is performed. The solder bump 5 can be accurately formed with a positional accuracy of several μm with respect to the outer shape formed by the mold.
Further, as shown in FIG. 4, a part of the tape 9 is made to protrude from the planned outer shape portion of the semiconductor device 1A to provide a bridge portion 13,
When the semiconductor device 1A is resin-sealed, it is sandwiched between resin-sealing dies to fix the positions of the semiconductor chip 2 and the tape 9 in the resin-sealing die, and the tape 9 provided on the resin-sealing die. The opening 1 of the resin encapsulation portion 6 provided in order to make contact with the upper conductor layer 10 and obtain contact with the solder bumps 5.
Form 2 This ensures contact between the protrusions provided on the resin-sealing die and the conductor layer 10 on the tape 9, so that the conductor layer 10 on the tape 9 and the protrusions provided on the resin-sealing die are secured. Occurrence of sealing resin flash due to resin bleeding is suppressed.

Example 2. 5 to 8 show a second embodiment of the present invention. FIG. 5 is an external view showing a partial cross section of a semiconductor device according to the present invention, and FIG. 6 is a portion taken along line kk 'in FIG. FIG. 7 is a cross-sectional view taken by cutting, FIG. 7 is a cross-sectional view showing a state before resin sealing in a manufacturing stage of a semiconductor device according to the present invention,
FIG. 8 is a partial cross-sectional view for explaining the method of manufacturing a semiconductor device according to the present invention. In each of the drawings, parts corresponding to those in FIGS. To do. In the figure, 1B is a semiconductor device according to the present embodiment,
14 is a semiconductor chip 1 using wire bonding technology
0 is a metal protrusion, and 15 is a comb-shaped conductor layer formed on the tape 9. The comb-shaped conductor layer 15 is a part of the conductor layer on the tape 9 and has a comb shape. Cage,
Wire bonding is performed from a plurality of conductor layer portions on the tape 9. 16 is a solder bump 5 and a metal protrusion 1
4 is a convex portion of the solder bump 5 that fits into a concave portion provided in the sealing resin portion 6 in order to improve the bondability with the solder bump 4.

Conventionally, the formation of the metal protrusions by the wire bonding technique involves forming bumps on the bonding pads 3 on the semiconductor chip 2 and forming TAB (Tape / Automated / Bondi).
In this embodiment, the metal protrusion 14 is formed on the conductor layer 10 on the tape 9 by the wire bonding technique described above. As a result, it is not necessary to use the method of complicated steps as disclosed in the above-mentioned Japanese Patent Laid-Open No. 1-179334, and the semiconductor element is placed on the base substrate such as the substrate 18 (FIG. 11) described later. There is no difficulty in positioning when down-bonding (a method of performing semiconductor bonding such as an active element downward as shown in FIG. 27 described later).

If a solder wire is used as a material for forming the metal protrusion using the above-mentioned wire bonding technique, it is fused with the solder bump 5 at the time of reflow, and high strength can be obtained. Further, since the comb-shaped conductive layer 15 is provided on the tape 9 having the conductive layer 10, the semiconductor chip 2 can be connected from a plurality of parts on the tape 9. This allows
For example, a signal from one solder bump 5 of the semiconductor device 1B can be transmitted to various bonding pads 3 in the semiconductor chip 2. Further, the comb-shaped conductive layer 15 may be used as a power supply wiring or a ground wiring to supply power and ground to a plurality of positions in the semiconductor chip 2. This eliminates the need for aluminum wiring within the semiconductor chip 2, suppresses an increase in inductance due to the wiring, and speeds up the semiconductor device.

In FIG. 7, the dotted line portion is an expected line of the portion sealed with resin. As shown in FIG. 7, the metal protrusion 14 formed by the wire bonding technique is projected from the expected line to be resin-sealed, and the metal protrusion 14 is pressed into the mold in the resin-sealed mold, After the resin sealing, the metal protrusion 14 is exposed from the sealing resin surface. That is, the height of the metal protrusion 14 formed by the wire bonding technique is adjusted by controlling the uncut amount of the metal protrusion 14 itself, and the metal protrusion 14 is formed into a resin-sealing mold in the resin sealing step. The resin is sealed so as to be pressed, and a part of the metal protrusion 14 is exposed. This facilitates manufacturing.

In FIG. 8, a recess is provided in the sealing resin 6 so as to fit in the portion where the solder bump 5 is formed. Then, when the solder bumps 5 are formed, the solder flows into the recesses, the sealing resin 6 and the solder mechanically mesh with each other, and the solder bumps 5 and the sealing resin 6, as well as the solder bumps 5 and the metal protrusions 1
The connection with 4 becomes strong. The comb-shaped conductor layer 15 may be applied to the semiconductor device of the first embodiment.

Example 3. 9 to 12 show a third embodiment of the present invention.
9 shows an embodiment, FIG. 9 is an external view showing a part of a semiconductor device according to the present invention, FIG. 10 is an external view showing a partial cross section of a semiconductor device according to the present invention, and FIG. 11 is a semiconductor according to the present invention. FIG. 12 is an external view showing a part of the apparatus when mounted.
5 is a cross-sectional view taken along the line bb 'in FIG. 4A. In each drawing, the portions corresponding to those in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. In the figure, 1C is a semiconductor device according to this embodiment, 17 is a stand lock for standing the semiconductor device 1C on a substrate described later, 18 is a substrate for mounting the semiconductor device 1C, and 19 is provided on the substrate 18. The wiring 20 is a solder for connecting the wiring 19 and the conductive layer 10.

In FIG. 9, the semiconductor device 1C has a conductive layer 1
A tape 9 having 0 is attached to one side of the semiconductor chip 2, and a part of a plane including the tape 9 and the conductive layer 10 on the tape 9 is exposed in a strip shape from the sealing resin 6. Then, as shown in FIG. 10, the conductor layer 10 formed on the tape 9 is formed.
Then, the bonding pad 3 on the semiconductor chip 2 is wire-bonded with the fine metal wire 11. Further, in FIG. 11, the semiconductor device 1C is mounted on the substrate 18 so that the semiconductor chip 2 therein is perpendicular to the substrate 18, and the wiring 19 and the exposed tape of the semiconductor device 1C are provided on the substrate 18. 9 is mounted by soldering so as to vertically intersect the conductor layer 10 on the substrate 9.

Further, in the semiconductor device 1C, the stand block 1 extending in the direction perpendicular to the element surface of the semiconductor chip 2 is provided.
7 is formed in a resin encapsulation process, and one side surface of the semiconductor device 1C and one surface of the stand block 17 are flush with the one side surface. As a result, the semiconductor device 1C can be mounted vertically on the substrate 18 as shown in FIGS. Here, the semiconductor chip 2 is resin-sealed while being held by the tape 9, but like the conventional semiconductor device, the semiconductor chip 2 is sealed.
May be adhered to a part of a lead frame called a die pad and held.

Example 4. 13 to 19 show a fourth embodiment of the present invention, FIG. 13 is an external view showing a part of a semiconductor device according to the present invention, and FIG. 14 is a partial sectional view of the semiconductor device according to the present invention. 15 is an external view showing a part of the semiconductor device according to the present invention when mounted, FIG. 16 is a cross-sectional view taken along the line cc 'in FIG.
Is a plan view showing a mounted state of the semiconductor device according to the present invention, FIG. 18 is a plan view showing a mounted state of a plurality of semiconductor devices according to the present invention, and FIG. 19 is a plan view showing a plurality of semiconductor devices according to the present invention. It is a top view which shows the state at the time of individual mounting. In each figure, the same code | symbol is attached | subjected to FIG. 1-FIG.4 and FIG.11, FIG.12, and the detailed description is abbreviate | omitted.
In the figure, 1D is a semiconductor device according to the present embodiment, 21 is a die pad which is a part of a lead frame for adhering and holding the semiconductor chip 2, and 22 is a tape 9 having a conductor layer 10 for adhering and holding, The base lead 22 is a base lead that is a part of a lead frame that can be floated above the semiconductor chip 2. The base lead 22 forms the stand lead 8. Reference numeral 23 is a groove portion of the sealing resin 6 that accommodates the bent portion of the stand lead 8.

In this embodiment, the tape 9 having the conductor layer 10 is adhered onto the base lead 22 which is arranged on one side of the semiconductor chip 2 and is separated therefrom. Note that, in FIG. 14, the base lead 22 is shown in a state before being cut and bent from a lead frame frame (not shown). On the other hand, the semiconductor chip 2 is adhered and fixed on the die pad 21 which is a part of the lead frame. Thus, unlike the case of the semiconductor device 1A of the above-described first embodiment in which the tape 9 is directly attached to the semiconductor chip 2, the periphery of the semiconductor chip 2 has a relatively strong adhesive force and the sealing resin 6 having a low water absorption rate. Since it is covered with, the interface peeling due to the explosion of water absorbed by the heat during mounting due to the heat at the time of mounting and the accompanying breakage of the metal fine wire 11 are less likely to occur than the adhesive layer at the interface between the semiconductor chip 2 and the tape 9. Product reliability is improved.

Further, in this embodiment, as can be seen from FIG. 13, the conductor layer 10 on the tape 9 is projected from the portion of the sealing resin 6 by a predetermined length, for example, 0.2 to 1 mm, and the conductor layer 10 is formed. As shown in FIG. 16, the substrate 1 is formed like a hinge (the portion in which the conductor layer 10 is bent in an L shape in the figure).
The soldering is performed by aligning with the wiring 19 on the wiring 8. As a result, the semiconductor device 1 of the above-described third embodiment
Compared to the case of C, connection failure (open failure) due to soldering of the conductor layer 10 on the tape 9 and the wiring 19 on the substrate 18 is reduced.

Further, in this embodiment, the base lead 22 is set to the ground potential, and the base lead 22 is designed to have a lower impedance than the conductor layer 10 on the tape 9.
This enables high-speed operation of the semiconductor device 1D.
Further, as shown in FIG. 14, the tape 9 is adhered to a part of the base lead 22 and the inside of the semiconductor chip 2 of the base lead 22 (where the bonding pad 3 is arranged).
The part near to is exposed in a strip. As a result, it is possible to connect any portion of the base lead 22 at ground potential to the bonding pad 3 on the semiconductor chip 2 that requires any ground potential, and the routing of aluminum wiring in the semiconductor chip 2 is short. As a result, the amount of signal delay is reduced and the semiconductor device 1D can operate at high speed. By the way, in FIG. 14, among the eight thin metal wires 11,
The first, fifth and seventh thin metal wires 11 from the left in the drawing are respectively connected to the bonding pads 3 on the semiconductor chip 2 for ground potential.

FIG. 17 shows the base lead 2 of the semiconductor device 1D.
The bending direction of the stand lead 8 as an external lead connected to 2 is shown. By bending the two external leads in different directions as shown in FIG. 17, the four leads as in the SVP shown in FIG. Similar independence can be obtained without the use of external leads. As a result, in the case of packages having the same outer shape, the conductor layer 10 on the tape 9 can be provided with two extra external leads as compared with the SVP.

FIG. 18 shows a case where the semiconductor devices 1D are mounted in parallel. Among the mounting methods expected when the semiconductor device 1D is a memory IC, the sealing resin 6 for accommodating the bent portion of the stand lead 8 is used. This is a case where the adjacent semiconductor device 1D is mounted without inserting the stand lead 8 in the groove 23. Further, FIG. 19 shows a case where the semiconductor devices 1D are mounted in parallel as in FIG. 18, but in FIG. 19, the semiconductor device 1D adjacent to the groove 23 of the sealing resin 6 that accommodates the bent portion of the stand lead 8 is shown. This is a case where the stand lead 8 is mounted by being embedded. In this way, by making the stand lead 8 of the semiconductor device 1D adjacent to the groove 23 of the sealing resin 6 that accommodates the bent portion of the stand lead 8 submerged, the mounting pitch of the semiconductor device 1D is reduced, and high density mounting is performed. Is possible. In addition, the conductor layer 10 on the tape 9 is projected from the sealing resin 6 portion by a predetermined length, for example, about 0.2 to 1 mm, and the conductor layer 10 is formed into a substrate 18 like a hinge.
Aligning with the upper wiring 19 and soldering with the solder 20 may be applied to other SVP semiconductor devices.

Example 5. 20 to 23 show a fifth embodiment of the present invention. FIG. 20 is an external view showing a partial cross section before a lead processing step in a semiconductor device manufacturing stage according to the present invention, and FIG. 22 is an external view showing a part of the semiconductor device at the time of mounting, FIG. 22 is a side view seen from the direction of arrow d in FIG. 21, and FIG. 23 is a configuration of a base lead, tape, ring lead, etc. of the semiconductor device according to the present invention. It is an external view which shows a part of element, In each figure, the same code | symbol is attached | subjected to FIGS. 1-4 and FIG. 11, FIG. 12, FIG. 15, and the detailed description is abbreviate | omitted. In the figure, 1E is a semiconductor device according to the present embodiment, 24 is a ring lead as an annular member arranged outside the base lead 22 so as to surround the base lead 22, 25 is a part of the base lead 22, and the base lead is shown. 22 is a comb tooth portion of the base lead provided to improve the adhesiveness of the tape 22, the tape 9 and the sealing resin 6.

In FIG. 20, the base leads 2 are sandwiched by the bonding pads 3 arranged in a line on the semiconductor chip 2.
A ring lead 23 is provided around the base lead 22 so as to pass through the side opposite to 2, and the base lead 22 and the ring lead 23 are set to a power supply potential or a ground potential, respectively. As a result, power can be supplied to or grounded to any bonding pad 3 in the semiconductor chip 2, aluminum wiring in the semiconductor chip 2 can be shortened, and signal delay in the semiconductor chip 2 can be reduced. At the same time, since the amount of inductance of the leads involved in power supply and grounding is reduced, the operation speed can be further increased as compared with the case of the semiconductor device 1D of the fourth embodiment described above.

In FIG. 21, portions of the base lead 22 and the ring lead 24 which are partially exposed from the sealing resin 6 are used as the stand leads 8. Here, the total of four stand leads 8 each having two ends are bent in two different directions at each end, as in the SVP described above. In FIG. 22, a part of the stand lead 8 and the groove portion 23 of the sealing resin 6 that accommodates the bent portion of the stand lead 8 are shown by a dotted line. In FIG. 23, a part of the base lead 22, the lower part of the tape 9, and the part other than the lower part of the conductor layer 10 on the tape 9 are removed to form a comb-shaped tape 9 having the base lead 22 and the conductor layer 10. , And the ring lead 23 are shown, with the tape 9 separated from the base lead 22.

As shown in FIG. 23, by removing a part of the base lead 22 and a portion other than the lower part of the conductor layer 10 on the tape 9, the bonding pad on the semiconductor chip 2 is manufactured in the manufacturing process of the semiconductor device 1E. When 3 and the conductor layer 10 on the tape 9 are joined by the metal fine wire 11, the wire bonding property of the metal fine wire 11 to the conductor layer 10 on the tape 9 is not impaired. This is because the base lead 22 is present below the conductor layer 10 on the tape 9 for wire bonding, so that the load at the time of wire bonding can be effectively used. Peeling occurs. Further, in order to improve the adhesion between the sealing resin 6 and the base lead 22 after sealing,
Water can be prevented from entering through the interface between the sealing resin 6 and the base lead 22, and the deterioration of moisture resistance can be suppressed. Base lead 2
The comb-teeth portion 25 of the base lead provided to improve the adhesiveness between the tape 2, the tape 9 and the sealing resin 6 may be similarly applied to the base lead 22 in other embodiments.

Example 6. 24 and 25 show a sixth embodiment of the present invention, FIG. 24 is an external view showing a partial cross section of a semiconductor device according to the present invention, and FIG. 25 is a portion taken along the line ee 'in FIG. It is sectional drawing cut and shown, In each figure, the same code | symbol is attached | subjected to the part corresponding to FIGS.
Detailed description thereof will be omitted. In the figure, 1F is a semiconductor device according to the present embodiment, 26 is a TAB tape as an adhesive member provided on the semiconductor chip 2, 27 is a wiring as an external electrode on the TAB tape 26, and 28 is a TAB tape 2.
Reference numeral 6 is an internal lead, 29 is a comb-shaped wiring on the TAB tape 26, 30 is a bridge portion of the TAB tape 26, and 31 is a bump provided on the bonding pad 3.

In FIG. 24, TA is used and TA
The tip end of the internal lead 28 of the B tape 26 and the bonding pad 3 of the semiconductor chip 2 are connected via a metal projection electrode called a bump 31. The bridge portion 3 of the TAB tape indicated by a broken line outside the resin-sealed portion of the TAB tape 26
Similarly to the bridging portion 13 (FIG. 4) in Example 1, 0 forms a concave portion provided in the sealing resin 6 for fixing the position of the semiconductor chip 2 in the sealing mold and forming the solder bump 5. It is possible to press the protrusion of the sealing die on the TAB tape 26. After that, the bridge part 3 of this TAB tape
0 is cut off when its role ends.

When the TAB technique is used, unlike the case of the semiconductor device 1A of the first embodiment, the TAB tape 26 is used.
It is possible to connect to the semiconductor chip 2 even if the internal lead 28 is not above the position of the TAB tape 26. That is, the thickness of the sealing resin 6 on the TAB tape 26 can be suppressed, and the semiconductor device 1F can be downsized. The bumps 31 may be provided on the bonding pads 3 or may be provided on the inner lead 28 side of the TAB tape 26. Further, in the present embodiment, the TAB tape 26 and the semiconductor chip 2 are shown in a state of being bonded, but the semiconductor chip 2 has the internal lead 28 protruding from the TAB tape 9.
It is also possible to hang it with, and it is not always necessary to bond it.

Example 7. 26 and 27 show a seventh embodiment of the present invention. FIG. 26 is an external view showing a partial cross section of a semiconductor device according to the present invention, and FIG. 27 is a portion taken along line f-f 'in FIG. It is sectional drawing cut and shown, and in each figure, FIGS. 1-4, FIG. 11, FIG. 12, FIG. 15, FIG.
Portions corresponding to 4 are assigned the same reference numerals and detailed description thereof will be omitted. In the figure, 1G is a semiconductor device according to the present embodiment, 32 is a positioning recess formed on the surface of the semiconductor device 1G by using a mold and fitted with the wiring 27 of the substrate 18, 33
Is a through hole formed in the substrate 18, 34 is the substrate 18
This is a relief recess formed by using a mold on the surface of the semiconductor device 1G in order to prevent interference with the through holes 33 and the like.

In this embodiment, the wiring 2 is formed on the semiconductor chip 2.
7 is provided, the wiring 27 and the semiconductor chip 2 are electrically connected, and the TAB tape 2 is provided.
The wiring 27 on 6 is resin-sealed so as to be exposed in a strip shape, and the step between the resin sealing surface and the wiring 27 on the TAB tape 26 is set to 20.
The TAB tape 26 of the semiconductor device 1G is suppressed to 0 μm or less.
The upper wiring 27 is set downward, and the wiring 27 and the wiring 19 on the substrate 18 are positioned and then soldered. In this way, since the step between the sealing resin surface and the wiring 27 is suppressed to 200 μm or less, the solder and the wiring 2 on the TAB tape 26 at the time of applying solder by screen printing, for example.
It is possible to prevent the contact of 7 and the occurrence of an open defect after reflow. Further, since the semiconductor device 1G does not have a lead frame protruding to the side surface from the encapsulating resin, the area required for mounting is small, and high-density mounting is possible.

Further, in this embodiment, the wiring 1 on the substrate 18
The positioning recess 32 that fits with the wiring 9 is roughly positioned between the semiconductor device 1G and the wiring 19 on the substrate 18. This facilitates mounting and improves mountability. Further, in this embodiment, the escape recess 34 is formed on the surface of the semiconductor device 1G using a mold. As a result, the substrate 1
8, the interference between the semiconductor device 1G and a portion other than the wiring 19 such as the through hole 33 is prevented, the effect of the positioning recess 32 is made sufficient, and the contact area between the semiconductor device 1G and the substrate 18 is reduced. As a result, so-called self-alignment is possible in which the semiconductor device 1G moves slightly during solder reflow and moves from a position roughly aligned by the positioning recess 32 to an appropriate mounting position.

Further, as shown in FIG. 26, the semiconductor device 1
The surface of G and the surface of the semiconductor chip 2 are bonded to the wiring surface 19 on the substrate 18 and the electrode surface, which is recessed by a maximum of 200 μm from the surface of the semiconductor device 1G, through solder paste and then reflowed. In the figure, the symbol m indicates the semiconductor device 1G.
Represents a step between the surface of the electrode and the electrode surface, that is, the wiring 27, and has a maximum of 200 μm, and the symbol n is the thickness of the solder paste, which is usually a maximum of 200 μm. Here, since the TAB method is used for electrical connection between the wiring 27 on the TAB tape 26 and the semiconductor chip 2, the resin thickness m in the figure indicates that the inner lead 28 is through the sealing resin 6. It is possible to reduce the thickness to about 50 .mu.m, which is the limit at which it looks and becomes defective.

[0123]

As described above, according to the invention of claim 1,
An adhesive member provided on the semiconductor chip and having a conductor layer, a connecting member for electrically connecting the electrode and the conductor layer provided on the semiconductor chip, a semiconductor chip, a conductor layer, an adhesive member, and a resin connecting member. Since the sealing member for sealing and the external electrode connected to the conductor layer through the opening provided in the sealing member are provided, moisture resistance is improved and reliability can be improved. The characteristics, the mounting density, and the versatility can be improved, and the size can be reduced.

According to the invention of claim 2, an adhesive member provided on the semiconductor chip and having a conductor layer, a connecting member for electrically connecting the electrode and the conductor layer provided on the semiconductor chip, and a conductor. A metal protrusion provided on the layer, a semiconductor chip, a conductor layer, an adhesive member, a connecting member, and a sealing member that seals the metal protrusion with resin and exposes the metal protrusion to the outside, and a metal protrusion exposed to the outside. Since it has an external electrode connected with, the moisture resistance is improved and the reliability can be improved. In addition, the electrical characteristics, the mounting density and the versatility can be improved, and the size can be reduced. There is an effect.

According to the invention of claim 3, in the invention of claim 1 or 2, the adhesive member has a comb-shaped conductor layer connected to the electrode provided on the semiconductor chip. In addition to the effect of the invention, there is an effect that a signal from an external electrode can be transmitted to various electrodes on a semiconductor chip.

According to the invention of claim 4, in the invention of claim 2, a recess is provided around the portion of the sealing member where the metal projection is exposed, and a part of the external electrode is made to bite into the recess. Therefore, in addition to the effect of the invention of claim 2, when the external electrode is formed, the solder flows into the concave portion, the sealing resin and the solder are mechanically meshed, and the solder and the sealing resin, and further the external electrode and the metal protrusion are coupled to each other. There is an effect that can be solid.

According to the invention of claim 5, in the invention of claim 3, the comb-shaped conductor layer is used as a wiring for power supply or a ground potential. Therefore, in addition to the effect of the invention of claim 3, a semiconductor chip is provided. There is no need for wiring inside,
The wiring has an effect that an increase in inductance is suppressed and the operation speed of the semiconductor device can be increased.

According to the invention of claim 6, an adhesive member provided on one side of the semiconductor chip and having a conductor layer is electrically connected to an electrode provided on the other side of the semiconductor chip and the conductor layer. Since the semiconductor device includes the member and the sealing member that seals the semiconductor chip, the conductor layer, the adhesive member, and the connecting member with resin and exposes one side of the conductor layer to the outside, improvement in mounting density and reliability due to vertical mounting and There is an effect that versatility can be improved.

According to the invention of claim 7, in the invention of claim 6, the supporting member is provided on the sealing member so as to project in a direction perpendicular to the active surface of the semiconductor chip. In addition to the effects of the invention, there is an effect that mounting is facilitated, and mountability and independence can be improved.

According to the eighth aspect of the present invention, a conductive basic member provided separately from the semiconductor chip, an adhesive member provided on the basic member and having a conductor layer, and the semiconductor chip are provided. A connecting member electrically connecting the first and second electrodes to the conductor layer and the basic member, respectively, and a semiconductor chip, the basic member, the conductor layer, the adhesive member and the connecting member are resin-sealed, and at least the basic member and the conductor. Since a sealing member that exposes one side of the layer to the outside is provided, interface peeling due to the explosion of water that has absorbed moisture by the heat of mounting and the accompanying breakage of the connecting member are less likely to occur, and product reliability is improved. There is an effect that it is possible to improve the mounting density, electrical characteristics and versatility.

According to the ninth aspect of the present invention, there is provided a conductive basic member which is provided separately from the semiconductor chip, and a conductive annular member which is provided apart from the semiconductor chip and provided around the basic member. An adhesive member provided on the member and having a conductor layer, and first, second and third adhesive members provided on the semiconductor chip.
A connecting member for electrically connecting the electrode and the conductor layer, the basic member and the annular member, respectively, and a semiconductor chip, a basic member, an annular member, a conductor layer, an adhesive member and at least the basic member resin-sealed, Since the annular member and the sealing member that exposes one side of the conductor layer to the outside are provided, it is not necessary to route the wiring within the semiconductor chip, and the wiring suppresses an increase in the inductance, thereby increasing the operation speed of the semiconductor device. Can be made possible, electrical characteristics can be improved, and
There is an effect that the packaging density, reliability and versatility can be improved.

According to the invention of claim 10, in the invention of claim 8 or 9, since the basic member exposed from the sealing member is used for supporting, in addition to the effect of the invention of claim 8 or 9, The advantage is that the independence of the semiconductor device can be improved.

According to the invention of claim 11, claims 8 to 1
In the invention of No. 0, the conductor layer is 0.2 to 1.0 from the sealing member.
Since it is exposed by about mm, in addition to the effects of the inventions of claims 8 to 10, there is an effect that the conductor layer and the wiring of the substrate can be easily connected and an open defect due to soldering is prevented.

According to the invention of claim 12, claims 8 to 1
In the invention of claim 1, since the conductor layer exposed from the sealing member is used as a hinge when connecting to the wiring on the board during mounting, the conductor layer can be used as a hinge.
In addition to the effects of the inventions of 11 to 11, there is an effect that mountability and reliability can be improved.

According to the invention of claim 13, claims 8 to 1
In the second aspect of the invention, since the basic member is used for ground potential, in addition to the effects of the invention of the eighth to the twelfth aspect, it is not necessary to route the wiring within the semiconductor chip, and the wiring suppresses an increase in inductance. Therefore, there is an effect that the operation speed of the semiconductor device can be increased.

According to the invention of claim 14, claims 8 to 1
In the invention of claim 3, since the surface of the basic member on the electrode side is exposed and the exposed portion can be wire-bonded, in addition to the effects of the invention of claims 8 to 13, There is an effect that routing is unnecessary, an increase in inductance is suppressed by the wiring, the operation speed of the semiconductor device can be increased, and the electrical characteristics can be improved and the manufacturing method can be simplified.

According to the invention of claim 15, claims 8 to 1
In the invention of claim 4, since the groove is provided in the portion of the sealing member where the basic member is exposed, in addition to the effects of the invention of claims 8 to 14, the mounting pitch of the semiconductor device is reduced,
This has the effect of enabling high-density mounting and improving mountability.

According to the invention of claim 16, claims 8 to 1
In the invention of claim 5, the basic member and the annular member are arranged at positions facing each other with the electrode interposed therebetween.
In addition to the effects of the invention described above, the wiring within the semiconductor chip is shortened, the signal delay within the semiconductor chip is reduced, and the inductance amount is reduced by the wiring, which enables faster operation of the semiconductor device. Therefore, there is an effect that the electrical characteristics can be improved.

According to the invention of claim 17, claims 8 to 1
In the invention of claim 6, the basic member and the annular member are used as a power supply or a ground potential wiring.
In addition to the effects of the sixteenth invention, the wiring within the semiconductor chip is shortened, and the signal delay within the semiconductor chip is reduced.
Further, there is an effect that the amount of inductance is reduced by the wiring, the operation speed of the semiconductor device can be increased, and the electrical characteristics can be improved.

According to the invention of claim 18, claims 8 to 1
In the invention of claim 7, one side of the basic member is deleted except for a portion facing the adhesive member and the conductor layer to form a comb shape. Therefore, in addition to the effects of the invention of claims 8 to 17, the sealing resin and the basic member are provided. The adhesiveness is improved, the invasion of moisture can be suppressed, and the deterioration of moisture resistance can be prevented.

According to the nineteenth aspect of the invention, an adhesive member provided on the semiconductor chip, and a wiring member extending from the adhesive member and electrically connected to an electrode provided on the semiconductor chip, Since the semiconductor chip, the adhesive member, and the sealing member that seals the wiring member with the resin are provided, and the external electrodes connected to the wiring member through the openings provided in the sealing member are provided, the semiconductor device can be downsized. Further, there is an effect that the mounting density, versatility, reliability and electric characteristics can be improved.

According to the twentieth aspect of the present invention, an adhesive member provided on the semiconductor chip, and a wiring member extending from the adhesive member and electrically connected to an electrode provided on the semiconductor chip, Since the semiconductor chip, the adhesive member, and the sealing member that seals the wiring member with the resin and exposes one side of the wiring member to the outside with a predetermined step, downsizing of the semiconductor device, mounting density, versatility In addition, there is an effect that reliability and electrical characteristics can be improved.

According to the invention of claim 21, in the invention of claim 19 or 20, since the adhesive member is a TAB tape, in addition to the effect of the invention of claim 19 or 20,
There is an effect that it can contribute to miniaturization of a semiconductor device.

According to the invention of claim 22, in the invention of claim 19 or 20, the adhesive member is a TAB tape, and the wiring member on the TAB tape is used as an external electrode. Therefore, the invention of claim 19 or 20 In addition to the effect of
There is an effect that the thickness of the sealing resin can be reduced.

According to the invention of Claim 23, Claims 20 to
In the invention of claim 22, since the sealing member has a positioning recess for fitting with the wiring of the board at a portion facing the board at the time of mounting, in addition to the effects of the invention of claims 20 to 22, wiring processing is facilitated and mounting is performed. There is an effect that the property is improved.

A semiconductor device according to a twenty-fourth aspect of the present invention is the semiconductor device according to any one of the twenty-third to twenty-third aspects, wherein the sealing member is a relief recess for preventing interference with a through hole or the like on the substrate at a portion facing the substrate during mounting. Therefore, in addition to the effects of the inventions of claims 20 to 23, there is an effect that self-alignment that moves from a position roughly aligned by the positioning recess to an appropriate mounting position becomes possible.

According to the twenty-fifth aspect of the invention, the step of attaching the adhesive member having the conductor layer on the semiconductor chip, the step of forming the electrode on the semiconductor chip, and the step of electrically connecting the electrode and the conductor layer to each other are performed. The step of connecting, the step of resin-sealing the semiconductor chip, the conductor layer, and the adhesive member, the step of forming an opening reaching the conductor layer in this sealing resin, and the opening is filled with solder to form an external electrode. Since the step of forming is included, there is an effect that the semiconductor device can be downsized and the packaging density can be improved by a simple manufacturing process.

According to the invention of claim 26, in addition to the effect of the invention of claim 24, in the invention of claim 25, since the opening is formed by the protrusion provided on the mold at the time of resin sealing. Therefore, there is an effect that the manufacturing becomes easy and the production efficiency can be improved.

According to the twenty-seventh aspect of the invention, in the twenty-fifth or twenty-sixth aspect of the invention, the semiconductor provided so that the protrusion provided on the mold for resin-sealing the opening is pushed into the conductor layer by a predetermined depth. Since the chip and the adhesive member are placed in a mold and resin-sealed, in addition to the effect of the invention of claim 25 or 26, a sealing resin burr on the conductor layer is generated and the conductor layer and the external electrode are There is an effect that loss of conductivity is prevented.

According to the invention of Claim 28, Claims 25 to
In the invention of No. 27, since the bridge portion of the adhesive member is sandwiched between the molds in order to hold the position where the semiconductor chip and the adhesive member are installed in the mold, the manufacturing is facilitated and the production efficiency can be improved. effective.

According to the invention of claim 29, claims 25
In the twenty-eighth aspect of the invention, the solder balls are placed in the openings, and the external electrodes are formed by reflowing.
In addition to the effect of the invention described above, there is an effect that the manufacturing process can be simplified.

According to the thirtieth aspect of the present invention, the step of attaching an adhesive member having a conductor layer on the semiconductor chip, the step of forming an electrode on the semiconductor chip, and the electrode and the conductor layer are electrically connected. A step of forming a metal protrusion on the conductor layer by a wire bonding method, a step of resin-sealing the semiconductor chip, the conductor layer, the adhesive member and the metal protrusion and exposing a part of the metal protrusion to the outside, Since the method further includes the step of forming the external electrode connected to the metal protrusion exposed to the outside, there is an effect that the semiconductor device can be downsized by a simple manufacturing process.

According to the invention of claim 31, in the invention of claim 30, in the step of exposing a part of the metal projection to the outside, the height of the metal projection is adjusted, and the uncut amount of the metal projection is adjusted. In addition to the effect of the invention of claim 30, in addition to the effect of the invention of claim 30, since the adjusted metal protrusion is resin-sealed so as to be exposed to the resin-sealing die during resin sealing to expose a part of the metal protrusion.
Further, there is an effect that the manufacturing process is simplified.

According to the thirty-second aspect of the invention, the step of attaching the adhesive member having the conductor layer on one side of the semiconductor chip, the step of forming the electrode on the other side of the semiconductor chip, and the electrode and the conductor layer are performed. Since it includes a step of electrically connecting and a step of resin-sealing the semiconductor chip, the conductor layer and the adhesive member and exposing one side of the conductor layer to the outside, miniaturization and mounting of the semiconductor device by a simple manufacturing process. There is an effect that the density can be improved.

According to the thirty-third aspect of the invention, the step of disposing the conductive basic member at a distance from the semiconductor chip, the step of adhering an adhesive member having a conductor layer on the basic member, A step of forming the first and second electrodes, a step of electrically connecting the first and second electrodes to the conductor layer and the basic member, respectively, and a step of resin-forming the semiconductor chip, the basic member, the conductor layer and the adhesive member. Since it includes the step of sealing and exposing at least the basic member and one side of the conductor layer to the outside, there is an effect that a highly reliable semiconductor device can be obtained by a simple manufacturing process.

According to the thirty-fourth aspect of the present invention, the step of disposing the conductive basic member at a distance from the semiconductor chip, and the step of disposing the conductive annular member at a distance from the semiconductor chip and around the basic member. A step of adhering an adhesive member having a conductor layer on the basic member, a step of forming first, second and third electrodes on a semiconductor chip, a first, second and third electrode and a conductor layer A step of electrically connecting the basic member and the annular member to each other, and at least one of the basic member, the annular member and the conductive layer, which is obtained by resin-sealing the semiconductor chip, the basic member, the annular member, the conductor layer and the adhesive member. Since the step of exposing the side to the outside is included, there is an effect that a semiconductor device having excellent electric characteristics can be obtained by a simple manufacturing process.

According to the thirty-fifth aspect of the present invention, the step of attaching the adhesive member to the semiconductor chip, the step of forming the electrode on the semiconductor chip, and the wiring member extending from the electrode and the adhesive member are electrically connected. Step of connecting, step of resin-sealing semiconductor chip, adhesive member and wiring member, step of forming an opening reaching the conductor layer in this sealing resin, and filling the opening with solder to form an external electrode Since it includes the step of forming the semiconductor device, the semiconductor device can be downsized and the packaging density can be improved by a simple manufacturing process.

According to the thirty-sixth aspect of the present invention, the step of attaching the adhesive member on the semiconductor chip, the step of forming the electrode on the semiconductor chip, and the wiring member extending from the electrode and the adhesive member are electrically connected. The step of connecting, the wiring member extending from the adhesive member and electrically connected to the electrode provided on the semiconductor chip, the semiconductor chip, the adhesive member and the wiring member are resin-sealed and one of the wiring members is formed. Since the step of exposing the side to the outside with a predetermined step is included, there is an effect that the semiconductor device can be downsized and the packaging density can be improved by a simple manufacturing process.

According to the thirty-seventh aspect of the present invention, the semiconductor device is arranged vertically to the substrate, and the conductor layer on the adhesive member attached to one side of the semiconductor chip in the semiconductor device is electrically connected to the wiring of the substrate. Since they are electrically connected, there is an effect that the packaging density can be improved.

According to the thirty-eighth aspect of the present invention, among the groove portions provided in the resin-sealed portion of the semiconductor device, the supporting member of another semiconductor device adjacent to the groove portion not used for bending the basic member is embedded. Since it is mounted in such a manner, there is an effect that high-density mounting becomes possible.

According to the thirty-ninth aspect of the present invention, resin sealing is performed so as to expose the adhesive member to which the wiring member is adhered on the resin surface on the semiconductor chip surface side of the semiconductor device, and the wiring member and the semiconductor on the adhesive member. Since the step difference with the resin surface of the device is suppressed to a predetermined value, the wiring member on the adhesive member is mounted so as to face the substrate, and the wiring member on the adhesive member is electrically connected to the wiring of the substrate. This has the effect of enabling high-density mounting.

[Brief description of drawings]

FIG. 1 is an external view showing a partial cross section of a first embodiment of a semiconductor device according to the present invention.

2 is a cross-sectional view taken along the line aa 'in FIG.

FIG. 3 is a sectional view of a semiconductor device according to a first embodiment of the present invention before a solder bump is formed in a manufacturing stage.

FIG. 4 is an external view showing a partial cross section for explaining a manufacturing process of the first embodiment of the semiconductor device according to the present invention.

FIG. 5 is an external view showing a partial cross section of a second embodiment of the semiconductor device according to the present invention.

6 is a cross-sectional view taken along the line kk 'in FIG.

FIG. 7 is a cross-sectional view showing a state before resin sealing in a manufacturing stage of a second embodiment of a semiconductor device according to the present invention.

FIG. 8 is a partial cross-sectional view for explaining the manufacturing process for the second embodiment of the semiconductor device according to the present invention.

FIG. 9 is an external view showing a part of a third embodiment of the semiconductor device according to the present invention.

FIG. 10 is an external view showing a partial cross section of a third embodiment of the semiconductor device according to the present invention.

FIG. 11 is an external view showing a part of a semiconductor device according to a third embodiment of the present invention when it is mounted.

12 is a cross-sectional view taken along the line bb 'in FIG.

FIG. 13 is an external view showing a part of a fourth embodiment of the semiconductor device according to the present invention.

FIG. 14 is an external view showing a partial cross section of a fourth embodiment of the semiconductor device according to the present invention.

FIG. 15 is an external view showing a part of a semiconductor device according to a fourth embodiment of the present invention at the time of mounting.

16 is a cross-sectional view taken along the line cc 'of FIG.

FIG. 17 is a plan view showing a mounted state of the semiconductor device according to the fourth embodiment of the invention.

FIG. 18 is a plan view showing a state in which a plurality of semiconductor devices according to the fourth embodiment of the present invention are mounted.

FIG. 19 is a plan view showing a state in which a plurality of semiconductor devices according to the fourth embodiment of the present invention are mounted.

FIG. 20 is an external view showing a partial cross section of the semiconductor device according to the fifth embodiment of the present invention before the lead processing step in the manufacturing stage.

FIG. 21 is an external view showing a part of the semiconductor device according to the fifth embodiment of the present invention during mounting.

22 is a side view seen from the direction of arrow d in FIG.

FIG. 23 is an external view showing a part of components such as a base lead, a tape and a ring lead of a fifth embodiment of the semiconductor device according to the present invention.

FIG. 24 is an external view showing a partial cross section of a sixth embodiment of the semiconductor device according to the present invention.

FIG. 25 is a cross-sectional view taken along the line ee ′ of FIG. 24.

FIG. 26 is an external view showing a partial cross section of a seventh embodiment of the semiconductor device according to the present invention.

27 is a cross-sectional view taken along the line ff ′ of FIG. 26.

FIG. 28 is an external view showing a partial cross section of a conventional semiconductor device.

FIG. 29 is a cross-sectional view taken along the line gg ′ of FIG. 28.

FIG. 30 is an external view showing a ZIP of a conventional semiconductor device.

FIG. 31 is a side view showing a ZIP of a conventional semiconductor device.

FIG. 32 is an external view showing an SVP of a conventional semiconductor device.

FIG. 33 is a side view of the SVP of the conventional semiconductor device as seen from the h direction.

FIG. 34 is a cross-sectional view taken along the line j-j ′ in FIG. 32.

FIG. 35 is a cross-sectional view showing a conventional semiconductor device.

[Explanation of symbols]

1A to 1G Semiconductor device, 2 Semiconductor chip, 3 Bonding pad, 5 Solder bump, 6 Sealing resin, 9 Tape, 10 Conductor layer, 11 Metal fine wire, 12 Opening part, 1
3,30 bridge part, 14 metal projection, 15 comb-shaped conductor layer, 16 convex part, 17 stand lock, 18 substrate,
19,27 wiring, 20 solder, 22 base lead, 2
3 groove part, 24 ring lead, 25 comb part, 26
TAB tape, 28 internal leads, 29 comb-shaped wiring, 3
2 positioning recess, 33 through hole, 34 escape recess.

Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI Technical display location H01L 21/321 23/02 B 23/28 Z 6921-4E 23/50 RY

Claims (39)

[Claims] 1. An adhesive member provided on a semiconductor chip and having a conductor layer, a connecting member for electrically connecting an electrode provided on the semiconductor chip and the conductor layer, the semiconductor chip, and the conductor. A sealing member that seals the layer, the adhesive member, and the connecting member with resin, and an external electrode connected to the conductor layer through an opening provided in the sealing member. Semiconductor device. 2. An adhesive member provided on a semiconductor chip and having a conductor layer, a connecting member for electrically connecting an electrode provided on the semiconductor chip and the conductor layer, and provided on the conductor layer. And a sealing member that seals the semiconductor chip, the conductor layer, the adhesive member, the connecting member, and the metal protrusion with a resin and partially exposes the metal protrusion to the outside, and the exposed metal protrusion. A semiconductor device comprising: the metal protrusion and an external electrode connected to the metal protrusion. 3. The semiconductor device according to claim 1, wherein the adhesive member has a comb-shaped conductor layer connected to an electrode provided on the semiconductor chip. 4. The semiconductor device according to claim 2, wherein a recess is provided around the portion of the sealing member where the metal protrusion is exposed, and a part of the external electrode is bitten into the recess. 5. The semiconductor device according to claim 3, wherein the comb-shaped conductor layer is used as a wiring for power supply or ground potential. 6. An adhesive member provided on one side of a semiconductor chip and having a conductor layer, a connection member electrically connecting an electrode provided on the other side of the semiconductor chip to the conductor layer, and the semiconductor described above. A semiconductor device comprising: a chip, the conductor layer, the adhesive member, and a sealing member that seals the connecting member with a resin and exposes one side of the conductor layer to the outside. 7. The semiconductor device according to claim 6, further comprising a support member provided on the sealing member so as to project in a direction perpendicular to the active surface of the semiconductor chip. 8. A conductive basic member provided separately from the semiconductor chip, an adhesive member provided on the basic member and having a conductor layer, and first and second conductive members provided on the semiconductor chip. A connecting member electrically connecting the electrode to the conductor layer and the basic member, respectively, and the semiconductor chip, the basic member, the conductor layer, the adhesive member and the connecting member are resin-sealed and at least the basic member. A semiconductor device comprising: a sealing member that exposes one side of the conductor layer to the outside. 9. A conductive basic member provided separately from a semiconductor chip, a conductive annular member provided apart from the semiconductor chip and around the basic member, and provided on the basic member. And an adhesive member having a conductor layer, and a connecting member electrically connecting the first, second and third electrodes provided on the semiconductor chip to the conductor layer, the basic member and the annular member, respectively. , The semiconductor chip, the basic member, the annular member, the conductor layer, the adhesive member and the connection member are resin-sealed and at least one side of the basic member, the annular member and the conductor layer is exposed to the outside. A semiconductor device comprising a sealing member. 10. The semiconductor device according to claim 8, wherein the basic member exposed from the sealing member is used for supporting. 11. The conductor layer is 0.2 to 0.2 mm thicker than the sealing member.
The semiconductor device according to claim 8, which is exposed by about 1.0 mm. 12. The semiconductor device according to claim 8, wherein the conductor layer exposed from the sealing member is used as a hinge when connecting to a wiring on a board during mounting. 13. The semiconductor device according to claim 8, wherein the basic member is used for ground potential. 14. The semiconductor device according to claim 8, wherein the surface of the basic member on the electrode side is exposed, and the exposed portion is wire-bondable. 15. The semiconductor device according to claim 8, wherein a groove is provided in a portion of the sealing member where the basic member is exposed. 16. The basic member and the annular member are arranged at positions facing each other with the electrode interposed therebetween.
16. The semiconductor device according to any one of 15. 17. The basic member and the annular member are used for power supply or ground potential wiring.
16. The semiconductor device according to any one of 16. 18. The semiconductor device according to claim 8, wherein one side of the basic member has a comb shape except for a portion facing the adhesive member and the conductor layer. 19. An adhesive member provided on a semiconductor chip, a wiring member extending from the adhesive member and electrically connected to an electrode provided on the semiconductor chip, the semiconductor chip, and the adhesive. A semiconductor device comprising: a member and a sealing member for sealing the wiring member with a resin; and an external electrode connected to the wiring member through an opening provided in the sealing member. 20. An adhesive member provided on a semiconductor chip, a wiring member extending from the adhesive member and electrically connected to an electrode provided on the semiconductor chip, the semiconductor chip, the adhesive A semiconductor device, comprising: a member and a wiring member that seals the wiring member with a resin; and a sealing member that exposes one side of the wiring member to the outside with a predetermined step. 21. The semiconductor device according to claim 19, wherein the adhesive member is a TAB tape. 22. The adhesive member is a TAB tape,
21. The semiconductor device according to claim 19, wherein the wiring member on the TAB tape is used as an external electrode. 23. The semiconductor device according to claim 20, wherein the sealing member has a positioning recess that is fitted to the wiring of the board at a portion facing the board when mounted. 24. The semiconductor device according to claim 20, wherein the sealing member has an escape recess for preventing interference with a through hole or the like on the substrate at a portion facing the substrate during mounting. 25. A step of attaching an adhesive member having a conductor layer on a semiconductor chip, a step of forming an electrode on the semiconductor chip, and a step of electrically connecting the electrode and the conductor layer. A step of resin-sealing the semiconductor chip, the conductor layer, and the adhesive member, a step of forming an opening reaching the conductor layer in the sealing resin, and a solder is filled in the opening to form an external electrode. A method of manufacturing a semiconductor device, comprising: 26. The method of manufacturing a semiconductor device according to claim 25, wherein the opening is formed by a protrusion provided on a mold for resin sealing. 27. The semiconductor chip and the adhesive member are set in the mold so that a protrusion provided on the mold when resin-sealing the opening is pressed into the conductor layer by a predetermined depth. 27. The method of manufacturing a semiconductor device according to claim 25, wherein the method is resin-sealing. 28. In order to hold a position where the semiconductor chip and the adhesive member are installed in the mold, a bridge portion of the adhesive member is sandwiched between the molds.
A method for manufacturing a semiconductor device according to any one of 1. 29. The method of manufacturing a semiconductor device according to claim 25, wherein a solder ball is placed on the opening, and the external electrode is formed by reflow. 30. A step of attaching an adhesive member having a conductor layer on a semiconductor chip, a step of forming an electrode on the semiconductor chip, and a step of electrically connecting the electrode and the conductor layer. A step of forming a metal protrusion on the conductor layer by a wire bonding method; a step of resin-sealing the semiconductor chip, the conductor layer, the adhesive member, and the metal protrusion and exposing the metal protrusion to a part of the outside. And a step of forming an external electrode connected to the metal protrusion exposed to the outside, the method of manufacturing a semiconductor device. 31. In the step of partially exposing the metal protrusion to the outside, the height of the metal protrusion is adjusted by adjusting the uncut amount of the metal protrusion, and the adjusted metal protrusion is sealed with a resin. 31. The method of manufacturing a semiconductor device according to claim 30, wherein a part of the metal protrusion is exposed by resin-sealing so as to press the resin-molding die. 32. A step of adhering an adhesive member having a conductor layer on one side of the semiconductor chip, a step of forming an electrode on the other side of the semiconductor chip, and an electrical connection between the electrode and the conductor layer. And a step of sealing the semiconductor chip, the conductor layer and the adhesive member with a resin and exposing one side of the conductor layer to the outside. 33. A step of disposing a conductive basic member at a distance from a semiconductor chip, a step of adhering an adhesive member having a conductor layer on the basic member, and a first and second step on the semiconductor chip. A step of forming electrodes, a step of electrically connecting the first and second electrodes to the conductor layer and the basic member, respectively, the semiconductor chip, the basic member, the conductor layer and the adhesive member And a step of exposing at least one side of the conductor layer to the outside, and a method of manufacturing a semiconductor device. 34. A step of disposing a conductive basic member at a distance from a semiconductor chip; a step of disposing a conductive annular member at a distance from the semiconductor chip and around the basic member; A step of attaching an adhesive member having a conductor layer to the semiconductor chip, a step of forming first, second and third electrodes on the semiconductor chip, the first, second and third electrodes and the conductor layer, Electrically connecting the basic member and the annular member, respectively, and sealing the semiconductor chip, the basic member, the annular member, the conductor layer and the adhesive member with resin and at least the basic member, the annular A step of exposing a member and one side of the conductor layer to the outside, and a method of manufacturing a semiconductor device. 35. A step of adhering an adhesive member on a semiconductor chip, a step of forming an electrode on the semiconductor chip, and a step of electrically connecting the electrode and a wiring member extending from the adhesive member. A step of resin-sealing the semiconductor chip, the adhesive member, and the wiring member; a step of forming an opening reaching the conductor layer in the sealing resin; and filling the opening with solder to form an external electrode. And a step of forming the semiconductor device. 36. A step of adhering an adhesive member on a semiconductor chip, a step of forming an electrode on the semiconductor chip, and a step of electrically connecting the electrode and a wiring member extending from the adhesive member. A wiring member which extends from the adhesive member and is electrically connected to an electrode provided on the semiconductor chip, and the semiconductor chip, the adhesive member and the wiring member are resin-sealed and And a step of exposing one side to the outside with a predetermined step, the method for manufacturing a semiconductor device. 37. A semiconductor device is arranged vertically to a substrate, and a conductor layer on an adhesive member attached to one side of a semiconductor chip in the semiconductor device is electrically connected to wiring of the substrate. A method for mounting a semiconductor device, comprising: 38. A supporting member for another semiconductor device, which is adjacent to a groove not used for bending a basic member among the grooves provided in the resin-sealed portion of the semiconductor device, is mounted by being embedded therein. A method for mounting a semiconductor device, comprising: 39. A resin is sealed so as to expose an adhesive member to which a wiring member is adhered, on a resin surface on the semiconductor chip surface side of the semiconductor device, and the wiring member on the adhesive member and the resin surface of the semiconductor device are separated from each other. The step is suppressed to a predetermined value, the wiring member on the adhesive member is mounted so as to face the substrate, and the wiring member on the adhesive member is electrically connected to the wiring of the substrate. Semiconductor device mounting method.