JPH0845028A - Production of magneto-resistive head - Google Patents
Production of magneto-resistive headInfo
- Publication number
- JPH0845028A JPH0845028A JP19496994A JP19496994A JPH0845028A JP H0845028 A JPH0845028 A JP H0845028A JP 19496994 A JP19496994 A JP 19496994A JP 19496994 A JP19496994 A JP 19496994A JP H0845028 A JPH0845028 A JP H0845028A
- Authority
- JP
- Japan
- Prior art keywords
- antiferromagnetic material
- material layer
- magnetoresistive
- magneto
- effect element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002885 antiferromagnetic material Substances 0.000 claims abstract description 37
- 230000005291 magnetic effect Effects 0.000 claims abstract description 19
- 230000000694 effects Effects 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 23
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 13
- 230000005415 magnetization Effects 0.000 claims description 2
- 230000005294 ferromagnetic effect Effects 0.000 claims 1
- 230000005330 Barkhausen effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000000696 magnetic material Substances 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 6
- 230000005381 magnetic domain Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910015136 FeMn Inorganic materials 0.000 description 2
- NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気ディスク装置、或
いはＶＴＲ等の磁気テープ装置用の再生専用ヘッドとし
て用いられる磁気抵抗効果型ヘッド（Ｍａｇｎｅｔｏ-
ｒｅｓｉｓｔｉｖｅ Ｈｅａｄ）の製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head (Magneto-type head) used as a read-only head for a magnetic disk device or a magnetic tape device such as a VTR.
The present invention relates to a method for manufacturing a resistive head.
【０００２】[0002]
【従来の技術】従来の磁気抵抗効果型ヘッドの製造方法
について以下に、図面と共に、順次説明する。図３は、
従来の磁気抵抗効果型ヘッドを媒体摺動面から見た断面
構造である。2. Description of the Related Art A conventional method of manufacturing a magnetoresistive head will be described below with reference to the drawings. FIG.
2 is a cross-sectional structure of a conventional magnetoresistive head when viewed from the medium sliding surface.
【０００３】１４はＮｉＦｅ等の磁気抵抗効果を有する
膜から成る磁気抵抗効果素子であり、１６はこの磁気抵
抗効果素子１４に一定のセンス電流を流すための、引き
出し導体層である。しかし、このような構造の従来の磁
気抵抗効果型ヘッドでは、バルクハウゼンノイズが発生
するという問題があった。Reference numeral 14 is a magnetoresistive effect element made of a film having a magnetoresistive effect such as NiFe, and 16 is a lead conductor layer for flowing a constant sense current through the magnetoresistive effect element 14. However, the conventional magnetoresistive head having such a structure has a problem that Barkhausen noise is generated.
【０００４】そこで、このバルクハウゼンノイズの発生
を防止するために、図４の磁気抵抗効果型ヘッドを媒体
摺動面から見た断面構造に示すように、磁気抵抗効果素
子１４の上に、例えば、ＦｅＭｎ等の反強磁性体層１５
を積層することにより、磁気交換結合作用を及ぼして、
この磁気抵抗効果素子１４を単磁区化することが提案さ
れている。Therefore, in order to prevent the Barkhausen noise from occurring, as shown in the sectional structure of the magnetoresistive head of FIG. , FeMn, etc. antiferromagnetic layer 15
By stacking, the magnetic exchange coupling effect is exerted,
It has been proposed to make the magnetoresistive effect element 14 into a single magnetic domain.
【０００５】１６はこの磁気抵抗効果素子１４に一定の
センス電流を流すための、引き出し導体層である。しか
し、反強磁性体層１５を磁気抵抗効果素子１４の上に全
面形成した構造は、再生出力の低下、及び波形半値幅の
増大（即ち、周波数特性の劣化）を来たすことが分って
いる。Reference numeral 16 is a lead conductor layer for flowing a constant sense current through the magnetoresistive effect element 14. However, it has been found that the structure in which the antiferromagnetic material layer 15 is entirely formed on the magnetoresistive effect element 14 causes a reduction in reproduction output and an increase in the waveform half-width (that is, deterioration in frequency characteristics). .
【０００６】この反強磁性体層１５は、磁気抵抗効果素
子１４上全面に形成するよりも、図５の両端部のみに反
強磁性体層を設けた従来の磁気抵抗効果型ヘッドの構造
断面図に示されるように、磁気抵抗効果素子１４の両端
部にのみ形成する方が、良好な再生特性が得られる。The antiferromagnetic material layer 15 is formed on the entire surface of the magnetoresistive effect element 14, rather than being formed on the entire surface of the magnetoresistive effect element 14. As shown in the drawing, better reproduction characteristics can be obtained by forming the magnetoresistive effect element 14 only at both ends thereof.
【０００７】このような磁気抵抗効果素子１４の両端部
に反強磁性体層１５を設けた構造を得るためには、図６
（ａ）に示すように、磁気抵抗効果素子１４の両端部を
除く全面をフォトレジスト２０等のマスクで覆った後
に、反強磁性体層１５を形成する。In order to obtain a structure in which the antiferromagnetic material layer 15 is provided at both ends of the magnetoresistive effect element 14 as shown in FIG.
As shown in (a), the antiferromagnetic material layer 15 is formed after the entire surface of the magnetoresistive effect element 14 excluding both ends is covered with a mask such as a photoresist 20.
【０００８】その後、そのフォトレジスト２０を除去す
ることにより、図６（ｂ）に示すように、磁気抵抗効果
素子１４の両端部にのみ反強磁性体層１５を残すことが
出来る。以上の方法は、一般にリフトオフ法と呼ばれて
いる。After that, by removing the photoresist 20, the antiferromagnetic material layer 15 can be left only at both ends of the magnetoresistive effect element 14, as shown in FIG. 6B. The above method is generally called a lift-off method.
【０００９】[0009]
【発明が解決しようとする課題】前記のリフトオフ法で
は、磁気抵抗効果素子１４の両端部に反強磁性体層１５
を設けた場合には、フォトレジスト等の塗布工程を必
ず、経なければ成らず、磁気抵抗効果素子１４は、大気
に晒されてしまうことになる。In the lift-off method described above, the antiferromagnetic material layer 15 is formed at both ends of the magnetoresistive effect element 14.
In the case of providing, the magnetoresistive effect element 14 is exposed to the air because the coating step of photoresist or the like must be performed.
【００１０】よって、磁気抵抗効果素子１４の表面に、
酸化層が必ず形成されてしまい、磁気抵抗効果素子１４
の両端部の上に反強磁性体層１５を積層しても、形成さ
れる酸化層のために磁気交換結合が得られず、その結
果、磁気抵抗効果素子１４の単磁区化が行われないの
で、バルクハウゼンノイズが低減されないという問題が
あった。Therefore, on the surface of the magnetoresistive effect element 14,
Since the oxide layer is always formed, the magnetoresistive effect element 14
Even if the antiferromagnetic material layer 15 is laminated on both ends of the magnetic field, magnetic exchange coupling cannot be obtained due to the oxide layer formed, and as a result, the magnetoresistive element 14 is not made into a single magnetic domain. Therefore, there is a problem that Barkhausen noise is not reduced.
【００１１】そこで従来、反強磁性体層を成膜する前に
酸化層を除去するためにスパッタエッチング等の方法が
採用されているが、磁気抵抗効果素子と反強磁性体層と
の磁気交換結合は、下地となる磁気抵抗効果素子の結晶
性に非常に敏感であるため、スパッタエッチングにより
磁気抵抗効果素子の結晶性に乱れが生じると、交換結合
磁界が減少したり、再現性が得られなくなったりする等
の問題が発生することがあった。Therefore, conventionally, a method such as sputter etching has been adopted to remove the oxide layer before forming the antiferromagnetic material layer. However, magnetic exchange between the magnetoresistive effect element and the antiferromagnetic material layer is performed. Since the coupling is very sensitive to the crystallinity of the underlying magnetoresistive effect element, if the crystallinity of the magnetoresistive effect element is disturbed by sputter etching, the exchange coupling magnetic field will decrease and reproducibility will be obtained. Problems such as disappearing sometimes occurred.
【００１２】本発明は、かかる問題点を考慮して、磁気
抵抗効果素子を両反強磁性体層で挟み込んだ構造とする
ことにより、十分で安定した磁気交換結合が得られ、従
って、バルクハウゼンノイズが低減されるような磁気抵
抗効果型ヘッドの製造方法を提供することを目的とす
る。In consideration of the above problems, the present invention has a structure in which the magnetoresistive effect element is sandwiched by both antiferromagnetic material layers, whereby sufficient and stable magnetic exchange coupling can be obtained, and therefore Barkhausen is obtained. It is an object of the present invention to provide a method of manufacturing a magnetoresistive head that reduces noise.
【００１３】[0013]
【課題を解決するための手段】本発明の磁気抵抗効果型
ヘッドの製造方法は、上記目的を達成するために、磁気
記録媒体上の磁化情報を磁気抵抗効果を有する磁気抵抗
効果素子によってその抵抗変化として読み取る磁気抵抗
効果型ヘッドの製造方法であって、基板上に所定形状の
第１の反強磁性体層、磁気抵抗効果素子、第２の反強磁
性体層を、この順序で連続して形成し、前記磁気抵抗効
果素子を前記両反強磁性体層で挟み込むようにし、前記
第２の反強磁性体層が磁気抵抗効果素子の再生トラック
となるべき部分を除いた両端部にのみ設けられるように
形成した。In order to achieve the above object, a method of manufacturing a magnetoresistive head according to the present invention uses a magnetoresistive effect element having a magnetoresistive effect to control the magnetization information on a magnetic recording medium. A method of manufacturing a magnetoresistive head, which is read as a change, wherein a first antiferromagnetic layer, a magnetoresistive element, and a second antiferromagnetic layer having a predetermined shape are successively formed on a substrate in this order. Formed so as to sandwich the magnetoresistive effect element between the two antiferromagnetic material layers, and the second antiferromagnetic material layer is provided only at both end portions of the magnetoresistive effect element excluding a portion to be a reproduction track. Formed so as to be provided.
【００１４】[0014]
【作用】本発明の磁気抵抗効果型ヘッドの製造方法は、
基板上に所定形状の第１の反強磁性体層、磁気抵抗効果
素子、第２の反強磁性体層をこの順序で連続して形成
（成膜）すると、磁気抵抗効果素子は第１の反強磁性体
層にエピタキシャルに成長することによって良好な面心
立方構造に、第２の反強磁性体層は磁気抵抗効果素子に
エピタキシャルに成長することによって、やはり良好な
面心立方構造になり、結果として、磁気抵抗効果素子と
第２の磁気抵抗効果素子との間で交換結合が得られる。The method of manufacturing the magnetoresistive head according to the present invention comprises:
When the first antiferromagnetic material layer, the magnetoresistive effect element, and the second antiferromagnetic material layer having a predetermined shape are successively formed (deposited) in this order on the substrate, the magnetoresistive effect element becomes the first antiferromagnetic material layer. By growing epitaxially on the antiferromagnetic layer, a good face-centered cubic structure is obtained, and by growing the second antiferromagnetic layer epitaxially on the magnetoresistive element, a good face-centered cubic structure is also obtained. As a result, exchange coupling is obtained between the magnetoresistive effect element and the second magnetoresistive effect element.
【００１５】なお、第１の反強磁性体層と磁気抵抗効果
素子との間には、交換結合は生じないので、第１の反強
磁性体層は磁気抵抗効果素子の結晶構造を整えるための
下地としてのみ機能する。Since exchange coupling does not occur between the first antiferromagnetic material layer and the magnetoresistive effect element, the first antiferromagnetic material layer adjusts the crystal structure of the magnetoresistive effect element. Function only as a base of
【００１６】本発明においては、以上に述べたように、
良好な結晶配向性が得られるため、大気中に晒したり、
スパッタエッチング等の物理的ダメージを与えるプロセ
スを経ても十分な磁気交換結合を設けた構造において
も、磁気抵抗効果素子を単磁区化出来るため、バルクハ
ウゼンノイズの低減を図ることが出来る。In the present invention, as described above,
Since good crystal orientation can be obtained, it can be exposed to the atmosphere,
Since the magnetoresistive effect element can be formed into a single magnetic domain even in a structure in which sufficient magnetic exchange coupling is provided even after a process of giving physical damage such as sputter etching, it is possible to reduce Barkhausen noise.
【００１７】[0017]
【実施例】本発明の磁気抵抗効果型ヘッド（Ｍａｇｎｅ
ｔｏ- ｒｅｓｉｓｔｉｖｅ Ｈｅａｄ）の製造方法の一
実施例について以下に、図面と共に、順次説明する。ま
ず、本発明の磁気抵抗効果型ヘッドの製造方法の一実施
例について、図１及び図２の工程図と共に説明する。EXAMPLE A magnetoresistive head of the present invention (Magne)
An embodiment of a method for manufacturing a to-resistive head will be described below with reference to the drawings. First, an embodiment of a method of manufacturing a magnetoresistive head of the present invention will be described with reference to the process diagrams of FIGS.
【００１８】本実施例の製造方法では、シールドタイプ
のシャントバイアスヘッドの場合について説明する。基
板としては、図示はしていないが、Ａｌ2 Ｏ3 −ＴｉＣ
を用いる。図１（ａ）の工程図に示される１は下シール
ドであり、厚さ略１μｍのＣｏ系非晶質合金膜を使用す
る。In the manufacturing method of this embodiment, a shield type shunt bias head will be described. As a substrate, although not shown, Al 2 O 3 —TiC
To use. Reference numeral 1 shown in the process diagram of FIG. 1A is a lower shield, and a Co-based amorphous alloy film having a thickness of about 1 μm is used.
【００１９】次に、下シールド１の上全面に、ギャップ
に相当する第１の絶縁膜であるＳｉＮ膜、或いはＳｉＯ
Ｎ膜２を、プラズマＣＶＤで略２０００オングストロー
ム成膜する。Next, on the entire upper surface of the lower shield 1, a SiN film or SiO that is a first insulating film corresponding to the gap is formed.
The N film 2 is formed by plasma CVD to approximately 2000 angstroms.
【００２０】この第１の絶縁膜２の上に、シャントバイ
アス膜３として、略２００〜５００オングストローム程
度のニオビウム（Ｎｂ），タンタル（Ｔａ），タングス
テン（Ｗ）等を成膜する。As the shunt bias film 3, niobium (Nb), tantalum (Ta), tungsten (W) or the like having a thickness of about 200 to 500 angstrom is formed on the first insulating film 2.
【００２１】更に、このシャントバイアス膜３の上に、
所定形状の第１の反強磁性体層４、磁気抵抗効果素子５
の順序で真空中で連続して形成（成膜）し、大気中に取
り出し、レジストを塗布パターニング後、イオンミリン
グで、図１（ａ）の工程図に示されるように形成する。Further, on the shunt bias film 3,
First antiferromagnetic layer 4 having a predetermined shape, magnetoresistive effect element 5
In this order, the layers are successively formed (film formation) in a vacuum, taken out into the air, coated with a resist, and patterned by ion milling as shown in the process diagram of FIG.
【００２２】ここでは、第１の反強磁性体層４として略
２００オングストロームのＦｅＭｎ膜を、磁気抵抗効果
素子５として厚さ略２００オングストロームのパーマロ
イ膜を、夫々使用したが、必ずしも、これらの材料に限
定されるものではない。Here, a FeMn film having a thickness of about 200 Å is used as the first antiferromagnetic layer 4, and a permalloy film having a thickness of about 200 Å is used as the magnetoresistive effect element 5, but these materials are not necessarily used. It is not limited to.
【００２３】次にフォトレジスト１１を、図１（ｂ）の
工程図に示すように塗布した後、再び真空中で、軟磁性
体層６、第２の反強磁性体層７を連続して成膜し、図１
（ｃ）の工程図に示す状態にする。Next, a photoresist 11 is applied as shown in the process diagram of FIG. 1B, and then the soft magnetic layer 6 and the second antiferromagnetic layer 7 are continuously formed in vacuum again. Deposition, Figure 1
The state shown in the process diagram of FIG.
【００２４】尚、軟磁性体層６、第２の反強磁性体層７
は、夫々磁気抵抗効果素子５、第１の反強磁性体層４と
同様の材料、略同一の厚さで形成したが、これらに限定
されるものではない。The soft magnetic layer 6 and the second antiferromagnetic layer 7
Are formed of the same material as the magnetoresistive effect element 5 and the first antiferromagnetic layer 4 and have substantially the same thickness, respectively, but are not limited to these.
【００２５】また、図１（ｃ）の工程図に示される軟磁
性体層６を成膜する前に、５０オングストローム程度の
スパッタエッチングを行ない、磁気抵抗効果素子５の表
面を清浄化しておく方が望ましい。Before the soft magnetic layer 6 shown in the process diagram of FIG. 1C is formed, sputter etching of about 50 angstrom is performed to clean the surface of the magnetoresistive effect element 5. Is desirable.
【００２６】その後，図２（ｄ）の工程図に示されるよ
うに、フォトレジスト１１を除去することにより、磁気
抵抗効果素子５の両端部にのみ、軟磁性体層６を介して
第２の反強磁性体層７を存在させるようにすることが出
来る。After that, as shown in the process diagram of FIG. 2D, the photoresist 11 is removed, so that only the both ends of the magnetoresistive effect element 5 are exposed to the second layer through the soft magnetic layer 6. The antiferromagnetic material layer 7 can be made to exist.
【００２７】これによって、軟磁性体層６と第２の反強
磁性体層７との間で交換結合し、更に、軟磁性体層６と
磁気抵抗効果素子５は静磁気的に結合する。よって、結
果として、軟磁性体層６を通じて磁気抵抗効果素子５が
単磁区化される。As a result, the soft magnetic layer 6 and the second antiferromagnetic layer 7 are exchange-coupled with each other, and the soft magnetic layer 6 and the magnetoresistive effect element 5 are magnetostatically coupled with each other. Therefore, as a result, the magnetoresistive effect element 5 is made into a single magnetic domain through the soft magnetic layer 6.
【００２８】この後、引き出し電極８、第２の絶縁膜
９、上シールド１０の順序で形成し、図２（ｅ）の工程
図に示される本発明による磁気抵抗効果型ヘッドの構造
を得ることが出来る。After that, the extraction electrode 8, the second insulating film 9 and the upper shield 10 are formed in this order to obtain the structure of the magnetoresistive head according to the present invention shown in the process diagram of FIG. Can be done.
【００２９】ここで、引き出し電極８として１０００オ
ングストローム程度のＣｕ膜を用い、第２の絶縁膜９及
び上シールド１０は夫々第１の絶縁膜２及び下シールド
１と同様のものを使用している。Here, a Cu film of about 1000 Å is used as the extraction electrode 8, and the second insulating film 9 and the upper shield 10 are the same as those of the first insulating film 2 and the lower shield 1, respectively. .
【００３０】以上の説明は、シールドタイプのシャント
バイアスヘッドの実施例について示したが、本発明はこ
れに限定されるものではなく、例えば、ソフトフィルム
バイアス型であってもよい。Although the above description shows the embodiment of the shield type shunt bias head, the present invention is not limited to this, and may be, for example, a soft film bias type.
【００３１】[0031]
【発明の効果】本発明の磁気抵抗効果型ヘッドの製造方
法は、所定形状の第１の反強磁性体層、磁気抵抗効果素
子、第２の反強磁性体層をこの順序で連続して形成し、
磁気抵抗効果素子を前記両反強磁性体層で挟み込むよう
にしたので、下地としての第１の反強磁性体層を設ける
ことによって、その後に成膜する磁気抵抗効果素子がエ
ピタキシャルに成長することから、磁気抵抗効果素子の
配向性が改善され、その結晶構造が良好な面心立方（ｆ
ｃｃ）構造となるため、第２の反強磁性体層と交換結合
する上で非常に望ましい状態を実現出来る。その結果、
磁気抵抗効果素子の両端部にのみ反強磁性体層を設けた
構造を得るために、レジスト塗布や、パターニングとい
った大気中でのプロセスを経て、更にスパッタエッチン
グ等の物理的ダメージを与えるプロセスを経ても、何等
支障なく交換結合バイアスを得ることができ、よって、
磁気抵抗効果素子のバルクハウゼンノイズを抑制するこ
とが出来る。第２の反強磁性体層が磁気抵抗効果素子の
再生トラックとなるべき部分を除いた両端部にのみ設け
られるように形成したので、再生出力の低下及び半値幅
の増大（即ち、周波数特性の劣化）を来すことはない。According to the method of manufacturing a magnetoresistive head of the present invention, the first antiferromagnetic material layer, the magnetoresistive effect element, and the second antiferromagnetic material layer having a predetermined shape are continuously formed in this order. Formed,
Since the magnetoresistive effect element is sandwiched between the two antiferromagnetic material layers, by providing the first antiferromagnetic material layer as a base, the magnetoresistive effect element to be subsequently formed can grow epitaxially. Therefore, the orientation of the magnetoresistive effect element is improved, and its crystal structure has a good face-centered cubic (f
Since it has the cc) structure, a very desirable state can be realized in exchange coupling with the second antiferromagnetic material layer. as a result,
In order to obtain a structure in which an antiferromagnetic material layer is provided only on both ends of the magnetoresistive effect element, a resist coating process, a patterning process in the atmosphere, and a physical damage process such as sputter etching are performed. Also, the exchange coupling bias can be obtained without any trouble, and
Barkhausen noise of the magnetoresistive effect element can be suppressed. Since the second antiferromagnetic material layer is formed so as to be provided only at both ends of the magnetoresistive effect element excluding the portion to be the reproduction track, the reproduction output is decreased and the half-value width is increased (that is, the frequency characteristic is increased). Deterioration) does not occur.
【図１】本発明の磁気抵抗効果型ヘッドの製造方法の一
実施例の各工程を示す工程図である。FIG. 1 is a process drawing showing each process of an embodiment of a method of manufacturing a magnetoresistive head of the present invention.
【図２】本発明の磁気抵抗効果型ヘッドの製造方法の一
実施例の各工程を示す工程図である。FIG. 2 is a process drawing showing each process of one embodiment of the method of manufacturing the magnetoresistive head of the present invention.
【図３】従来の磁気抵抗効果型ヘッドの概略を示す構造
断面図である。FIG. 3 is a structural cross-sectional view schematically showing a conventional magnetoresistive head.
【図４】従来の磁気抵抗効果型ヘッドの概略を示す構造
断面図である。FIG. 4 is a structural cross-sectional view schematically showing a conventional magnetoresistive head.
【図５】両端部のみに反強磁性体層を設けた従来の磁気
抵抗効果型ヘッドの構造断面図である。FIG. 5 is a structural cross-sectional view of a conventional magnetoresistive head in which antiferromagnetic material layers are provided only on both ends.
【図６】図５の磁気抵抗効果型ヘッドの構造を得るため
のリフトオフ法による従来法の断面図である。6 is a cross-sectional view of a conventional method by a lift-off method for obtaining the structure of the magnetoresistive head of FIG.
１ 下シールド ２ 第１の絶縁膜 ３ シャントバイアス膜 ４ 第１の反強磁性体層 ５，１４ 磁気抵抗効果素子 ６ 軟磁性体層 ７ 第２の反強磁性体層 ８ 引き出し電極 ９ 第２の絶縁膜 １０ 上シールド １１，２０ フォトレジスト １５ 反強磁性体層 １６ 引き出し導体層 1 Lower Shield 2 First Insulating Film 3 Shunt Bias Film 4 First Antiferromagnetic Material Layer 5, 14 Magnetoresistive Element 6 Soft Magnetic Material Layer 7 Second Antiferromagnetic Material Layer 8 Extraction Electrode 9 Second Insulating film 10 Top shield 11,20 Photoresist 15 Antiferromagnetic material layer 16 Lead conductor layer
Claims (2)
を有する磁気抵抗効果素子によってその抵抗変化として
読み取る磁気抵抗効果型ヘッドの製造方法であって、基
板上に所定形状の第１の反強磁性体層、磁気抵抗効果素
子、第２の反強磁性体層をこの順序で連続して形成し、
前記磁気抵抗効果素子を前記両反強磁性体層で挟み込む
ようにしたことを特徴とする磁気抵抗効果型ヘッドの製
造方法。1. A method of manufacturing a magnetoresistive head in which magnetization information on a magnetic recording medium is read as a change in resistance by a magnetoresistive element having a magnetoresistive effect, the method comprising: A ferromagnetic layer, a magnetoresistive effect element, and a second antiferromagnetic layer are successively formed in this order,
A method of manufacturing a magnetoresistive head, wherein the magnetoresistive element is sandwiched between the antiferromagnetic layers.
子の再生トラックとなるべき部分を除いた両端部にのみ
設けられるように形成した特許請求の範囲第１項記載の
磁気抵抗効果型ヘッドの製造方法。2. The magnetoresistive device according to claim 1, wherein the second antiferromagnetic material layer is formed only on both ends of the magnetoresistive element except for a portion to be a reproducing track. Method of manufacturing effective head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19496994A JPH0845028A (en) | 1994-07-27 | 1994-07-27 | Production of magneto-resistive head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19496994A JPH0845028A (en) | 1994-07-27 | 1994-07-27 | Production of magneto-resistive head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0845028A true JPH0845028A (en) | 1996-02-16 |
Family
ID=16333360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19496994A Pending JPH0845028A (en) | 1994-07-27 | 1994-07-27 | Production of magneto-resistive head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0845028A (en) |
-
1994
- 1994-07-27 JP JP19496994A patent/JPH0845028A/en active Pending
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