JPH0845819A - Exposure equipment - Google Patents

Abstract

(57) [Summary] [Purpose] A mask pattern is satisfactorily transferred onto a substrate without lowering throughput. An exposure apparatus that performs exposure while moving a mask and a substrate with respect to a projection optical system is different from the first illumination optical system (ILa) that illuminates the mask (M) and the first illumination optical system. A second illumination optical system (ILb) for illuminating the mask on the area;
An upright image of the mask illuminated by the illumination optical system is printed on the substrate (P)
It has a first projection optical system (PLa) formed above and a second projection optical system (PLb) forming an erect image of the mask illuminated by the second illumination optical system on the substrate. Where the first and second
The illumination optical system is provided with illumination area moving means (101a, 102a, 101b, 102b) for moving the illumination area.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning type exposure apparatus for exposing a mask image on a substrate while moving the mask and the substrate.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels have been widely used as display elements used in word processors, personal computers, televisions and the like. In manufacturing such a liquid crystal display panel, a thin film electrode is patterned on a glass substrate into a desired shape by a photolithography technique. As an apparatus of this type, for example, a mirror projection type aligner as shown in FIG. 10 is known.

In FIG. 10, the mask M is illuminated by an arcuate illumination field MI by an illumination optical system (not shown). The light path of the light from the illumination field MI is deflected by about 90 ° at the reflection surface 71a of the trapezoidal mirror 71, and the concave mirror 72 and the convex mirror 73.
It reaches the concave mirror 72 again via. The light reflected by the concave mirror 72 has its optical path deflected by 90 ° at the reflection surface 71b of the trapezoidal mirror 71, and then the image of the illumination field MI is formed on the plate P made of a glass substrate coated with a photosensitive agent (resist). Form PI. Here, the image of the mask M is transferred onto the plate P by scanning the mask M and the plate P in the direction of the arrow in the drawing.

[0004]

In the conventional technique as described above, in order to enlarge the exposure area, it is possible to first divide the exposure area into a plurality of areas and perform the exposure. At this time, exposure is performed while exchanging the plurality of divided masks, so that mask images are sequentially formed on the plate (substrate) in the plurality of divided exposure regions. However, in this exposure method, a mask replacement operation is required in the process of exposing a plurality of exposure regions, which leads to a decrease in throughput and it is necessary to accurately connect patterns between a plurality of exposure regions. Therefore, it is necessary to greatly improve the accuracy of the pattern in each mask.

Next, in order to enlarge the exposure area without exchanging the mask, a mask larger than the field of view of the projection optical system is used to perform exposure while scanning the mask and the plate, and then the mask. There is a method in which the plate and the plate are moved in the scanning orthogonal direction (step operation), and the operation of scanning and exposing the mask and the plate again is performed. Even in such a method, it is necessary to alternately repeat the scanning exposure operation and the step operation, so that there is a problem that the throughput is lowered.

Therefore, an object of the present invention is to provide an exposure apparatus which can satisfactorily transfer a pattern of a mask onto a substrate without causing a decrease in throughput.

[0007]

In order to achieve the above object, for example, as shown in FIG. 1, an exposure apparatus according to the present invention illuminates a mask (M) with an illumination optical system to form an image of the mask on a substrate ( P) An exposure apparatus for performing exposure while moving a mask and a substrate with respect to a projection optical system formed on the illumination optical system, wherein the illumination optical system forms a first illumination area (MIa) on the mask. It has an illumination optical system (ILa) and a second illumination optical system (ILb) that forms a second illumination area (MIb) different from the first illumination area on the mask. Then, the projection optical system forms a first projection optical system (PLa) that forms an erect image of the mask illuminated by the first illumination area on the substrate, and an erect image of the mask illuminated by the second illumination area. A second projection optical system (PLb) formed on the substrate. Here, the first and second illumination optical systems have illumination area moving means (101a, 102a, 101b, 102b) for moving the first and second illumination areas with respect to the mask.

The "erect image" in the present invention refers to an image having a positive lateral magnification in the scanning direction and the scanning orthogonal direction.

[0009]

In the exposure apparatus according to the present invention as described above,
Since a plurality of projection optical systems are combined, a large exposure area can be obtained by a single exposure, and the throughput can be increased. Further, according to the present invention, the first and second illumination regions can be moved on the mask by the illumination region moving means. Therefore, for example, even when there is an error in assembling a plurality of illumination optical systems, they are always on the plate. It is possible to make the exposed energy constant.

Further, in the present invention, it is preferable that at least one of the first and second projection optical systems has an optical axis movable with respect to the optical axis of the other projection optical system.
With this configuration, it is possible to always accurately transfer the mask pattern to a predetermined position on the substrate. Here, in the first and second projection optical systems, when the relationship between the optical axis on the mask side and the relationship on the optical axis on the substrate are not equal, the first and second illumination areas are moved by the illumination area moving means. Even if the width of the illumination area in the scanning direction is adjusted to be always constant, an image of the first illumination area (first exposure area) and an image of the second illumination area (second exposure area) formed on the substrate. Exposure area), the width of each exposure area in the scanning direction is not constant because the positional relationship in the mask in-plane direction with respect to the first and second illumination areas is brought about. At this time, the exposure amount on the substrate is not constant and the line width of the pattern transferred on the substrate is partially different, which is not preferable.

Further, in the exposure apparatus according to the present invention,
Since a large exposure area can be realized without increasing the exposure area of each projection optical system, there is an advantage that the projection optical system can be downsized, and the projection optical system itself can be easily made highly accurate. . Further, in the exposure apparatus according to the present invention, since each optical member constituting the projection optical system is small, the amount of absolute aberration is reduced, and scanning exposure can be realized with good optical performance. is there.

[0012]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram schematically showing an embodiment of an exposure apparatus according to the present invention. In FIG. 1, the scanning direction of the mask M and the plate P is the Z direction, the direction orthogonal to the scanning direction in the planes of the mask M and the plate P is the Y direction, and the normal direction of the mask M and the plate P is the X direction. I am trying.

In FIG. 1, five illumination optical systems ILa to
ILe has five illumination regions MIa to MIe on the mask M.
Are formed respectively. These illumination optical systems ILa to IL
Since e has the same configuration, only the configuration of the illumination optical system ILa will be described here. Light source 1a
Is an ultra-high pressure mercury lamp that emits g-line (435.8 nm) or h-line (404.7 nm) exposure light, and the exposure light from the light source 1a is reflected by the elliptical mirror 2a and condensed before input. It becomes a parallel light flux through the lens and enters the optical integrator 3a. The optical integrator 3a is composed of, for example, a fly-eye lens, and forms a plurality of secondary light sources on its emission surface based on the exposure light from the light source 1a. The light from the optical integrator 3a is condensed by the condenser lens 4a having the front focus position on the secondary light source surface formed by the optical integrator 3a, and uniformly illuminates the field stop 5a. The light that has passed through the opening of the field stop 5a is a pair of parallel plane plates 101a and 102a and the relay lens systems 6a and 7a.
To reach on the mask M in order. Here, the field stop 5
a and the surface of the mask M are conjugately arranged by the relay lens systems 6a and 7a including the lens group 6a and the lens group 7a, and the illumination area MIa having a uniform light amount distribution is formed on the mask M. .

Therefore, on the mask M, the field stop 5a.about.
Illumination area MIa defined in a predetermined shape by 5e
MIe is formed, and illumination regions MIa to MI on the mask M are formed.
Only the pattern in e is illuminated. Next, the illumination area MI
The light from the pattern on the mask M illuminated by a to MIe passes through the five projection optical systems PLa to PLe provided in the optical path between the mask M and the plate P, and within the illumination regions MIa to MIe. An erect image of the pattern of the mask M located at is formed on the plate P as exposure regions PIa to PIe. Since these projection optical systems PLa to PLe have similar configurations, only the configuration of the projection optical system PLa will be described here.

The projection optical system PLa includes a reflecting surface 9a that is inclined at 45 ° with respect to the mask M surface (YZ plane) and a reflecting surface 1 that is inclined at 45 ° with respect to the plate P surface (YZ plane).
2a, a triangular mirror member 8a, a lens system 10a having an optical axis parallel to the mask M surface and the plate P surface, and a roof type reflecting member 11a having two reflecting surfaces orthogonal to each other.
Have and. Here, the ridge lines of the two reflecting surfaces of the roof-type reflecting member 11a are provided so as to be at the front focus position of the lens system 10a. Such a projection optical system is disclosed in, for example, Japanese Patent Publication No. Sho 49-35453.

The light from the pattern on the mask M illuminated by the illumination area MIa has its optical path deflected by 90 ° by the reflecting surface 9a of the triangular mirror member 8a, and the lens system 10 is moved.
After passing through a, it is reflected by the roof type reflection member 11a and again enters the lens system 10a. Light from the roof type reflection member 11a via the lens system 10a is deflected by 90 ° by the reflection surface 12a of the triangular reflection member 8a, and then the plate P is sequentially passed through the pair of parallel plane plates 103a and 104a. Reach the top Here, in the projection optical system PLa, since the image-forming relationship in the Y direction is reversed by the roof-type reflecting member 11a, an erect image of the same size as the mask M is formed on the plate P even in the one-time image-forming system. To be done.

Although not shown in FIG. 1, in the exposure apparatus according to this embodiment, the mask M and the plate P are placed on a stage movable along the Z direction in the drawing. Then, the mask M is formed by the illumination optical systems ILa to ILe.
By moving the mask M and the plate P integrally while illuminating
Erect images of the same size as the mask M illuminated by Ie are sequentially formed. As a result, the pattern of the mask M is transferred onto the plate P.

In this embodiment, five sets of the illumination optical system and the projection optical system are provided, but the illumination optical system and the projection optical system are not limited to only five sets. Further, in this embodiment, the illumination optical systems ILa to ILe have straight optical axes, but a mirror for deflecting the optical path may be provided in the optical path of the illumination optical systems ILa to ILe. Since the present embodiment has a plurality of sets of illumination optical systems, the images of the field stops 5a to 5e on the mask M deviate from the predetermined positions when there is a mechanical assembling error. There is a possibility that the problem of forming an image, that is, the illumination regions MIa to MIe deviating from a predetermined position may occur. Therefore, in this embodiment,
Parallel plane plates 101a, 102a to 101e, 1 as illumination area moving means in the optical paths of the illumination optical systems ILa to ILe.
02e is provided. Hereinafter, description will be given with reference to FIGS. 2 and 3.

FIG. 2 is an XZ sectional view of the illumination optical system ILa, and FIG. 2 shows only the optical path from the condenser lens 4a to the mask M. FIG. 3 is a YZ plan view showing an illumination area which is an image of the field stops 5a to 5e on the mask M. In FIG. 2, the plane-parallel plate 101a is rotatably provided about the Z direction in the figure, and
02a is provided rotatably around the Y direction (the direction perpendicular to the paper surface) in the figure. Further, since the rear focus position of the lens group 6a and the front focus position of the lens group 7a are configured to coincide with each other, the relay lens groups 6a and 7a are a double-sided telecentric optical system.

Now, referring to FIG. 2, the plane parallel plate 102a is formed.
Is at the reference position shown by the broken line in the figure, that is, when the normal line of the plane-parallel plate coincides with the optical axis of the illumination optical system ILa, the images of the field stop 5a and the field stop 5a with respect to the optical axis of the illumination optical system. The relationship with does not change. Next, as indicated by the solid line in the figure, when the plane parallel plate 102a is rotated about the Y direction from the reference position indicated by the dashed line in the figure, the field stop 5
The light flux from a is parallel plane plate 10 as shown by the solid line in the figure.
After being laterally displaced in the Z direction by 2a, it is incident on the relay lens systems 6a and 7a. And the relay lens system 6
The light flux from the plane-parallel plate 102a via a and 7a reaches the mask M in a state of being laterally offset with respect to the optical axis of the illumination optical system ILa (optical axis of the relay lens systems 6a and 7a). At this time, the image of the field stop 5a (illumination area MIa) formed on the mask M moves in the Z direction in the figure. When the plane-parallel plate 101a is rotated about the Z direction in the figure, the image of the field stop 5a (illumination area MIa) formed on the mask M moves in the Y direction in the figure.

As described above, in this embodiment, the illumination area MIa on the mask M can be moved in the YZ plane by the rotation operation of the pair of parallel plane plates 101a and 102a. Since the illumination optical systems ILb to ILe have the same configuration as the illumination optical system ILa, only the configuration of one set of the illumination optical system ILa has been described. Next, referring to FIG. 3, a plurality of sets of illumination optical systems ILa to IL.
In step e, an adjustment method will be described in a case where the illumination regions MIa to MIe by the illumination optical systems ILa to ILe deviate from the predetermined relationship due to an error in assembling. In FIG. 3, a plurality of sets of illumination optical systems ILa to IL
If there is a mounting error in e, the field diaphragms 5a to 5e
Are illumination areas MIa _{1 to} MIe _{2 as} indicated by broken lines in the figure.
To form an image on the surface of the mask M. At this time, when scanning exposure is performed by moving the mask M and the plate P along the Z direction in the drawing, the illuminance distribution on the mask M surface is not uniform in the Y direction (scanning orthogonal direction), and thus on the plate P. In this case, there is a problem that the exposure amount becomes uneven, and as a result, the line width of the pattern transferred onto the plate P is partially different.

Therefore, in this embodiment, the illumination optical system ILa is used.
-Parallel plane plates 101a, 102a to 101 in ILe
e, by rotating the axis Y direction or Z direction 101e, field stop an image of 5a~5e from illumination area MIa ₁ ~MIe ₂ before adjustment to the illumination area MIa ₂ ~MIe ₂ indicated by the solid line in FIG. 3 To move. At this time, in the adjusted illumination areas MIa _{2 to} MIe ₂ , the Z direction (scanning direction)
The sum of the lengths of the illumination areas is always constant at any position in the Y direction. As a result, a uniform illuminance distribution in the Y direction can be realized on the mask M, and the exposure amount on the plate P can be made uniform.

In the present embodiment, the illumination area on the mask M can be moved in two directions within the YZ plane. However, in order to obtain a uniform illuminance distribution on the mask M, the illumination area at least in the Y direction. It may be any structure that can move. That is, in each of the illumination optical systems ILa to ILe, the plane parallel plates 101a to 101a to be rotatable about the Z direction are used.
If 101e is provided, a uniform illuminance distribution on the mask M can be achieved.

In addition, since the present embodiment has a plurality of sets of projection optical systems PLa to PLe, when there is a mechanical assembly error between the projection optical systems, the illumination area MI is present.
There arises a problem that a to MIe deviate from a predetermined position on the plate P and form an image. At this time, the illumination optical system I
Illumination area M by the illumination area moving means in La to ILe
Even if Ia to MIe are set to the predetermined positions, the problem occurs that the exposure areas PIa to PIe are displaced from the predetermined positions.

Therefore, in this embodiment, as the exposure area moving means, a pair of parallel plane plates 103a, 104a to 103e, 10 are provided in the optical paths of the projection optical systems PLa to PLe.
4e are provided respectively. Hereinafter, description will be made with reference to FIGS. 4 and 5. 4 is an XZ sectional view of the projection optical system PLa, and FIG. 5 is an illumination area MIa to M on the plate P.
FIG. 3 is a YZ plan view showing an exposure area which is an image of Ie.

In FIG. 4, in the optical path between the triangular mirror member 8a of the projection optical system PLa and the plate P, a plane parallel plate 10 rotatably provided about the Z direction in the figure.
3a and a plane parallel plate 104a that is rotatably provided about the Y direction in the drawing (the direction perpendicular to the paper surface) as an axis. Now, in FIG. 4, when the plane-parallel plate 104a is at the reference position shown by the broken line in the figure, that is, when the normal line of the plane-parallel plate a is parallel to the optical axis of the projection optical system PLa, the projection optics is projected. Illumination region MIa with respect to the optical axis of system PLa
The relationship between (not shown) and the exposure area PIa (not shown) does not change.

Next, as shown by the solid line in the figure, when the plane parallel plate 104a is rotated about the Y direction from the reference position shown by the broken line in the figure, the light flux from the illumination area MIa becomes
As shown by the solid line in the drawing, the plane parallel plate 104a causes lateral displacement in the Z direction and then reaches the plate P.
As a result, the exposure area PIa formed on the plate P is formed.
(Image of illumination area MIa) moves in the Z direction in the figure. When the plane-parallel plate 103a is rotated about the Z direction in the figure, the exposure area formed on the plate P is
It moves in the Y direction in the figure.

As described above, in this embodiment, the exposure area PIa on the plate P can be moved in the YZ plane by the operation of rotating the pair of parallel plane plates 103a and 104a. Note that other projection optical systems PLb to PL
Since e has the same configuration as the projection optical system PLa described above, only the configuration of one set of projection optical system PLa will be described here.

Next, in FIG. 5, when there is an error in assembling a plurality of sets of projection optical systems PLa to PLe, the illumination areas MIa to MIe on the mask M are exposed as indicated by broken lines in the figure. Images are formed on the plate P as regions PIa _{1 to} PIe ₁ . Here, when scanning exposure is performed by moving the mask M and the plate P along the Z direction in the drawing, the illuminance distribution on the plate P is not uniform in the Y direction (scanning orthogonal direction). The unevenness of the exposure amount occurs on the plate P. This causes a problem that the line width of the pattern of the mask M transferred onto the plate P is partially different.

Therefore, in this embodiment, as described above, the plane-parallel plates 103a and 104 in the projection optical systems PLa to PLe are used.
By rotating a to 103e, 104e about the Y direction or the Z direction as an axis, the images of the illumination regions MIa to MIe are adjusted from the exposure regions PIa _{1 to} PIe ₁ before adjustment to the exposure regions PIa ₂ to Move to PIe ₂ . At this time, in the adjusted exposure regions PIa _{2 to} PIe ₂ , the sum of the lengths of the illumination regions in the Z direction (scanning direction) is always constant at any position in the Y direction. As a result, a uniform illuminance distribution can be achieved on the plate P in the Y direction, which in turn makes it possible to make the exposure amount on the plate P uniform.

In this embodiment, the exposure area on the plate P can be moved in two directions in the YZ plane, but in order to obtain a uniform exposure amount distribution on the plate P, at least in the Y direction. It is only necessary that the exposure area can be moved. That is, if each of the projection optical systems PLa to PLe is provided with only parallel plane plates 103a to 103e rotatable about the Z direction as an axis, a uniform exposure amount distribution on the plate P can be achieved.

In this embodiment as described above, a pair of parallel plane plates are provided as the illumination area moving means and the exposure area moving means, but instead, for example, as shown in FIG. 6 (a),
A pair of declination prisms 105 and 106 rotatable about the optical axis of the illumination optical system or the projection optical system may be provided.
Further, for example, as shown in FIG. 6 (b), a pair of deflection prisms 107 and 108 that are movable in the direction along the optical axis of the illumination optical system or the projection optical system may be provided instead of the pair of parallel plane plates. good.

In the present embodiment, the field diaphragms 5a to 5e in each illumination optical system may be provided so that their positions can be adjusted. At this time, for example, by providing the field stops 5a to 5e so as to be movable in the Y direction and the Z direction, it is possible to move the illumination regions MIa to MIe formed on the mask along two directions in the YZ plane. Become. Further, for example, the field diaphragms 5a to 5e are connected to the illumination optical systems ILa to I.
If it is rotatably provided about the optical axis of Le, the illumination regions MIa to MIe formed on the mask can be rotated in the YZ plane.

Further, in the embodiment shown in FIG. 1, the field stop 5a-5e is provided for each of the illumination optical systems ILa-ILe. For example, as shown in FIG.
The configuration may be such that one field stop 50 having openings 50a to 50e corresponding to the numbers a to ILe is provided. In the above-described embodiments, it is assumed that the illumination unevenness caused by the illumination optical system and the exposure amount unevenness caused by the projection optical system are completely corrected. However, if there is a manufacturing error or the like in the illumination optical system, uneven illumination may occur on the mask M, and eventually uneven exposure amount may occur on the plate P. Also, the mask M
Even in the case where the illuminance distribution is completely uniform above, if the projection optical system has a manufacturing error or the like, for example, the exposure amount unevenness on the plate P may occur.

Next, a method for correcting illumination unevenness and exposure amount unevenness will be described with reference to FIGS. 8 (a) and 8 (b). FIG. 8 (a) is a plan view showing the field stop in the illumination optical system, and FIG.
8 is an enlarged view of a main part of FIG. 8 (a). In FIG. 8 (a), the field stop has rectangular openings 51a to 51e whose longitudinal direction is in the scanning orthogonal direction (Y direction).
In a region where 51e overlap each other in the Y direction (overlap region), a checkered pattern is provided as shown in FIG. 8 (b). Here, the field stop has a structure in which, for example, a chrome pattern is vapor-deposited on a plane-parallel plate, and the checkerboard pattern is also formed by vapor-depositing a chrome pattern. The openings 51a to 51e are transmissive portions.

For example, when there is a difference in the illuminance on the mask M between the illumination optical system ILa having the field stop aperture 51a and the illumination optical system ILb having the field stop aperture 51b, the mask The pitch of the checkerboard pattern in the overlapping area of the opening 51a and the pitch of the checkerboard pattern in the overlapping area of the opening 51b may be changed so that the illuminance distribution is continuous on M. Thereby, the exposure amount distribution on the plate P can be made continuous.

Further, the projection optical system PLa and the projection optical system PL
If there is a difference in the amount of transmitted light between the openings 51b and b, the pitch of the checkered pattern and the openings 51b in the overlapping area of the openings 51a are set so that the exposure distribution is continuous on the plate P. It suffices to change the pitch of the checkerboard checkered pattern in the overlapping area of.
The checkered pattern is not limited to the pattern provided only in the overlapping area, and the overlapping area may be formed such that the illuminance distribution on the mask M or the exposure amount distribution on the plate P is continuously uniform. It may be provided outside.

Instead of the checkered pattern shown in FIGS. 8 (a) and 8 (b), a dot pattern shown in FIGS. 9 (a) and 9 (b) may be provided. Figure 9 (a)
Shows a field stop having trapezoidal openings 52a to 52e, and FIG. 9B is an enlarged view of the main parts of the openings. As shown in FIG. 9B, a dot pattern made of a chrome pattern is provided in the overlap region of the trapezoidal openings 52a to 52e. Here, the pitch, size, and arrangement of each dot pattern are determined so that the illuminance distribution on the mask M or the exposure amount distribution on the plate P is uniform and continuous.

As a result, the plate P can always have a constant exposure amount during scanning exposure. Instead of moving each illumination area by the illumination area moving means, it is also possible to adopt a configuration in which the amount of transmitted light is attenuated in the portion of the field stop corresponding to the overlap area. For example,
The field stop may be formed by vapor-depositing a chrome pattern on a plane parallel plate, and the dot-shaped chrome pattern may be provided in a corresponding area of the overlap area.

In the above-described embodiments, the projection optical system is the lens system having the front focal position on the ridge of the roof type reflecting member, but if the optical system is capable of obtaining an erect image, for example, 2 A set of Offner type optical system, two sets of Dyson type optical system, and two sets of refractive lens system may be provided in series. Also, as the relay lens system in the illumination optical system, an optical system combining a lens system having a plane mirror at the front focal position and a triangular mirror member, or an Offner type or Dyson type optical system and a trapezoidal mirror member or a right-angle prism is combined. An optical system may be used.

Further, in this embodiment, the individual illumination areas M
Although a plurality of illumination optical systems corresponding to Ia to MIe are provided, instead of this, for example, an optical fiber or a half mirror may be used to guide light from one or a plurality of light sources to a plurality of illumination regions. good.

[0042]

As described above, according to the present invention, it is possible to provide an exposure apparatus which can satisfactorily transfer a mask pattern onto a substrate without lowering throughput and without causing uneven exposure.

[Brief description of drawings]

FIG. 1 is a schematic view schematically showing an embodiment according to the present invention.

FIG. 2 is a cross-sectional view showing a main part of an illumination optical system in an example.

FIG. 3 is a plan view showing an arrangement of illumination areas on a mask.

FIG. 4 is a sectional view of a projection optical system in an example.

FIG. 5 is a plan view showing the arrangement of exposure areas on a plate.

FIG. 6 is a diagram showing a modification of the illumination area moving means or the exposure area moving means.

FIG. 7 is a diagram showing a modification of the field stop.

FIG. 8 is a diagram showing a modification of the field stop.

FIG. 9 is a diagram showing a modification of the field stop.

FIG. 10 is a diagram showing a conventional exposure apparatus.

[Explanation of symbols]

M ... Mask, P ... Plate, ILa-ILe ... Illumination optical system, MIa-MIe ... Illumination area, PLa-PLe ... Projection optical system, PIa-PIe ... Exposure area, 101a, 102a-101e, 102e ... Illumination area moving means , 103a, 103a to 104e, 104e ... Exposure area moving means,

Claims (4)

[Claims] 1. An exposure apparatus for illuminating a mask by an illumination optical system and performing exposure while moving the mask and the substrate with respect to a projection optical system for forming an image of the mask on a substrate, the illumination optical system comprising: The system includes a first illumination optical system that forms a first illumination area on the mask, and a second illumination optical system that forms a second illumination area on the mask that is different from the first illumination area. The projection optical system includes: a first projection optical system that forms an erect image of the mask illuminated by the first illumination area on the substrate; and the mask illuminated by the second illumination area. A second projection optical system for forming an upright image of the image on the substrate, wherein the first and second illumination optical systems move the first and second illumination areas with respect to the mask. Exposure apparatus having moving means 2. The first and second illumination optical systems each have a field stop provided at a position conjugate with the mask, and the illumination area moving means includes the first and second illumination optical systems. 7. An optical member which is arranged in an optical path between the field stop and the mask and which moves an image of the field stop formed on the mask in an in-plane direction of the mask. 1. The exposure apparatus according to 1. 3. The illumination area moving means is provided at a position conjugate with the mask in an optical path of the first and second illumination optical systems, and with respect to an optical axis of the first and second illumination optical systems. 2. An exposure apparatus according to claim 1, further comprising a field diaphragm movably provided. 4. The first and second projection optical systems have exposure area moving means for changing the positional relationship between the optical axis on the mask side and the optical axis on the substrate side. The exposure apparatus according to any one of 1 to 3.