JPH0851100A - Fine structure forming method, recording apparatus manufacturing method, and etching mask - Google Patents

Abstract

(57) [Abstract] [Structure] Work piece (eg glass substrate or glass layer)
14 is processed by RIE dry etching to obtain a fine structure
When forming 66, a method in which the etching selection ratio of the etching mask 79 to the workpiece (etching rate ratio of the workpiece 14 to the etching mask 79) is 12 or more. [Effect] The etching rate of the etching mask with respect to the material to be processed is extremely low. Therefore, even if the thickness of the etching mask and the etching conditions are limited, it is possible to always form a fine structure of a desired shape easily and with good controllability. it can.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a method for forming a fine structure,
The present invention relates to a manufacturing method of a recording device and an etching mask.

[0002]

2. Description of the Related Art In recent years, in image recording of video cameras, televisions, computer graphics and the like, there is an increasing need for colorization of hard copy as well as recording of mono color. In response to this, various types of printers have been developed and deployed in various fields.

Among these recording methods, an ink sheet coated with an ink layer in which a high-concentration transfer dye is dispersed in a suitable binder resin, and a dyeing resin that receives the transferred dye are coated. The heat-sensitive recording head located on the ink sheet applies heat according to the image information, and the heat-sensitive recording head located on the ink sheet applies heat according to the image information. There is a method of thermal transfer.

The so-called thermal transfer system, which obtains a full-color image by repeating the above-mentioned operation for each of the image signals decomposed into yellow, magenta, and cyan, which are the three primary colors of subtractive color mixture, is compact and easy to maintain. Therefore, it is attracting attention as an excellent technology that has an immediacy and obtains a high-quality image comparable to a silver salt color photograph.

FIG. 33 is a schematic front view of the main part of such a thermal transfer type printer. According to this printer, a thermal recording head (hereinafter referred to as a thermal head) 1 and a platen roller 3 face each other, and an ink sheet 12 having an ink layer 12a provided on a base film 12b between them,
The recording paper (transferred material) 40 having the dyeing resin layer (dye receiving layer) 40a provided on the paper 40b is sandwiched and pressed against the thermal head 1 by the platen roller 3.

The ink (transfer dye) in the ink layer 12a selectively heated by the thermal head 1 is
The transfer is carried out in a dot shape on the dyeing resin layer 20a of the transfer target 20, and thermal transfer recording is performed. In such thermal transfer recording, generally, a line system in which a longitudinal thermal head is fixedly arranged so as to be orthogonal to the recording paper traveling direction, or a serial head in which the thermal head reciprocates in a direction orthogonal to the recording paper traveling direction is used. The method is adopted.

The Applicant has been able to reduce waste and transfer energy while taking advantage of such a thermal transfer recording system.
In order to reduce the size and weight of the printer, a non-contact type dye vaporization type laser beam printer (LB as shown in FIG. 34 is used.
P) has already been proposed.

According to this recording method, a heat-fusible dye layer
1 μm between a recording head (for example, a serial type printer head) 10 having 22 in the vaporizing section 17 and a recording medium (printing paper) 50 having a receiving layer 50a for receiving a vaporized (or sublimated) dye. A minute void 11 in the range of 1 mm is provided.

Then, by irradiating the laser beam L, the liquefied dye stored in the dye storing portion 37 of the vaporizing portion 17 of the recording head 10.
22 is selectively heated to near its boiling point to be vaporized, the vaporized dye 32 is caused to fly in the gap 11, and transferred from the vaporization hole 23 onto the photographic printing paper 50 which is a recording medium to obtain continuous gradation. Get the image you have. By repeating this operation for each of the image signals decomposed into the three primary colors of the subtractive color mixture, yellow, magenta, and cyan, full color can be achieved.

In this recording method, the photographic printing paper 50 is opposed to the recording head 10 on the upper side, for example, and the laser light emitted from the laser 18 and condensed by the lens 19 is emitted near the upper surface of the vaporizing section 17. It is advisable to irradiate L to cause the vaporized dye 32 to fly or move upward. In this case, in order for the transfer dye to move in the gap 11 by the heating means, in addition to the vaporization phenomenon,
This phenomenon is often seen when irradiated with a high-power laser, and the phenomenon that the bonds of dye molecules are efficiently cut and the energy is used to etch at a very high rate and the energy of gas generated by boiling or explosion is used. Then, the phenomenon of etching at a very large rate can also be used (a transfer mechanism other than such a vaporization mechanism is referred to as ablation: the same applies hereinafter).

Further, a head base having a laser beam transmitting property.
A dye reservoir 15 is provided in 14, and the liquefied dye 22 is accommodated between the dye reservoir 15 and a spacer 28 fixed on the head base 14, and the liquefied dye 22 is supplied from here to a vaporization section 17 through a dye passage 27. In this case, in order to improve the supply efficiency and the vaporization efficiency of the dye to the vaporization unit 17, the dye escape due to the decrease in the surface tension of the dye caused by heat generation is prevented, and the continuous supply and retention of the dye by utilizing the capillary phenomenon. The vaporizing section 17 is provided with an immersion dye layer 21 for performing the above, and a photothermal converter 20 having a sufficient laser beam absorbability.

A protective plate (not shown) is fixed on the spacer 28 in order to hold the gap 11 and guide the printing paper 50 moving in the X direction (direction perpendicular to the paper surface). A heater for holding the liquefied state of the dye may be embedded in the protective plate.
16 is arranged in the dye containing portion (the above-mentioned passage 27).

The solid powder heat-meltable dye 12 in the solid dye storage tank 15 is supplied from a supply port 23 by a check valve 24.
It is heated to the melting point by the heater 16 and melted (liquefied). The liquefied dye 22 is supplied at a constant rate to the upper surface of the immersion dye layer 21 of the vaporizing section 17 at a high speed by the capillary phenomenon of the immersion dye layer 21.

The entire printer including this printer head is provided with, for example, yellow, magenta, and cyan dye reservoirs 15Y, 15M, and 15C on a common base 14 for full-color use, from which dyes 12 to 24 are dyed. Vaporizing parts 17Y, 17M, 17C in rows that form a large number of dots
Supply to.

For each of these vaporizers,
As shown in 34, a large number of condenser lenses are provided for each laser beam emitted from a multi-laser array 30 in which 12 to 24 corresponding lasers (particularly semiconductor laser chips) 18 are arranged in an array.
The light is condensed by the microlens array 31 in which 19 are arranged.

As described above, according to this dye vaporization type laser beam printer, regarding the dye consumed for recording, only the lost portion is voluntarily or forcibly in the molten state from the dye reservoir to the vaporization section. By pouring, or
It can be continuously applied onto an appropriate substrate, and the substrate can be continuously supplied to the vaporizing unit by moving to the transfer unit. This is possible because the dye contains little binder resin. Therefore, since the vaporizing section involved in recording can be repeatedly used many times, the ink sheet is disposable only once in the above-mentioned thermal transfer method, which is advantageous in terms of resource saving and environmental protection.

Further, since it is a vaporization type or an ablation type, recording can be carried out without contact between the dye layer and the recording medium (printing paper), so that it can be seen by the above-mentioned thermal transfer system at the time of the second and subsequent printing. The reverse transfer of the dyes and the color mixture do not occur, and the heating portion is only the head including the vaporizing portion, and the power consumption is remarkably reduced as compared with the above-mentioned thermal transfer method. At the same time, the printer can be made smaller and lighter because a small volume dye reservoir is used for supplying the dye instead of the above-described ink sheet.

Further, since this recording system utilizes vaporization or sublimation of the dye, it is not necessary to heat the dye receiving layer of the recording medium as in the above-mentioned thermal transfer system, and the ink sheet and the recording medium are not recorded. It is not necessary to press the body against the body with high pressure, and this is also advantageous in reducing the size and weight of the printer. Since the dye layer in the vaporized portion and the recording medium do not come into contact with each other, heat fusion cannot occur between them, and recording is possible even if the compatibility between the dye and the receiving layer resin is small. Therefore, the range of design and selection of the dye and the resin for the receiving layer is remarkably expanded.

Further, the semiconductor laser 18 is basically used as a light source as a heat energy supply source for vaporizing (or sublimating) the dye. However, the semiconductor laser has a high conversion efficiency from electric power to light, and Since the dye has excellent directivity and light collecting property, the heat energy transfer efficiency of the dye is also very high. Therefore, the total energy utilization efficiency is markedly higher than that of the conventional method (thermal transfer by the above-mentioned thermal head or ink jet), which is advantageous in downsizing and power saving.

Further, it is difficult to express gradation with a conventional ink jet color printer, but since the semiconductor laser can easily control output power, pulse width, etc., the above recording method can easily express multi gradation. realizable. That is,
An electric image created by a color video camera or the like can be converted into a dye transfer corresponding to an image signal by a semiconductor laser to form a full-color image having at least 128 gradations per color, which is comparable to silver halide photography. it can.

The head 10 as a transfer body suitable for the dye vaporization type recording method has a property of sufficiently withstanding the amount of heat instantaneously applied at the time of transfer, and spontaneously due to a capillary phenomenon to the vaporization part (transfer part). It is preferable to have a structure (21 in FIG. 34) that has a large surface area for supplying a liquid dye and can firmly hold the dye during transfer.
Further, by providing an appropriate heat retaining device, it becomes possible to use a dye or a dye mixture having a melting point of room temperature or higher.

A transfer dye suitable for this recording method is
It has an appropriate vaporization rate or ablation rate, and shows a fluid state at 200 ° C or lower in a single or mixed state,
Any dye may be used as long as it has necessary and sufficient heat resistance. Specific examples thereof include disperse dyes, oil-soluble dyes, basic dyes and acid dyes. In particular, when the ablation mechanism is superior to the vaporization mechanism, a dye having a large molecular weight and a low vaporization rate, such as a direct dye,
Even carbon black and pigments can be transferred. Even for a dye having a melting point of room temperature or higher, the melting point is lowered by mixing the dyes with each other or by mixing the dye and a volatile low molecular weight substance.

Further, the photographic printing paper suitable for this recording method has a proper compatibility with the transfer dye, easily accepts the transfer dye, promotes the original color development of the dye, and fixes the dye. Any photographic paper can be used. For example, for the disperse dye, a paper having a surface coated with a polyester resin, a polyvinyl chloride resin, an acetate resin, or the like, which has good compatibility with the disperse dye, is preferable. The fixing of the dye transferred onto the printing paper may be performed by heating the transferred image so that the transferred dye on the surface penetrates into the image receiving layer.

The dye transfer type heating means is roughly classified into a method using a thermal head, a laser beam, and a material that absorbs light in a wavelength range including the wavelength range of the laser light and converts light energy into heat energy (photothermal conversion). A body) (20 in FIG. 34) and a laser beam.

When laser light is used, the resolution is remarkably improved, and by increasing the laser light density in the optical system, it becomes possible to perform intensive heating, and the ultimate temperature is increased. As a result, the thermal efficiency is improved. There is a feature called.
Particularly, by using the multi-laser, the time for transferring one screen is significantly shortened.

However, the photothermal converter must have sufficient heat resistance in order to continuously absorb the laser light of light energy. Therefore, as the photothermal converter used in this system, a thin film type light absorber such as a metal thin film that exhibits absorption matching the emission wavelength of a laser, or a two-layer film of a metal thin film and a ceramic thin film having a high dielectric constant is directly transferred. In addition to being provided on the part, heat resistance such as fine particle type light absorbers such as carbon black and metal fine particles, organic dyes such as phthalocyanine dyes, naphthalocyanine dyes, cyanine dyes, anthraquinone dyes or organometallic dyes A dye or pigment having excellent properties may be used by uniformly dispersing it in a transfer dye.

[0027]

In the above, the immersion dye layer 21 is required to have a fine uneven structure because of its function.

As such a structure, as shown in FIG. 35, for example, a structure in which glass beads 60 having a diameter of several μm are deposited on the base 14 (however, the photothermal conversion layer is not shown: the same applies hereinafter), As shown in 36, an air bridge 61 made of metal or the like is provided as a local light absorbing structure near the dye surface, and as shown in FIG. 38, a pillar structure 66 is formed on the base 14 by etching or the like. Etc. are possible.

The air bridge 61 is provided so as to straddle over the dye accommodating concave portion 62 formed in the base 14 (which corresponds to the vaporizing portion 17 described above), and has a narrow width formed on both sides thereof. The dye is held by the discharge ports 63 and 64,
The vaporized dye is discharged from there.

However, as shown in FIG. 35, glass beads
With the method of depositing 60 and the air bridge structure as shown in FIG. 36, it is difficult to control the manufacturing process and structure, and it is difficult to stably obtain the desired photothermal conversion.

That is, when the glass beads 60 are used,
It is not easy to uniformly deposit and hold the beads on the base, including making the beads themselves. Further, in order to manufacture the air bridge structure, as shown in FIG. 37, (a) the concave portion 62 is processed in the base 14, (b) an embedding material 65 such as photoresist or glass is embedded, and after that, ( c) Form the light absorbing air bridge 61 on the upper surface in a predetermined pattern,
Further, the embedding material 65 is removed by wet etching through the discharge ports 63 and 64 to finish the structure as shown in FIG. Therefore, there are many steps in the manufacturing process, and it is difficult to control the process and the structure.

On the other hand, in the case of the pillar structure 66 shown in FIG. 38, when the base 14 is, for example, a glass substrate, the diameter of each pillar 67 and the distance w between adjacent pillars are 1 to 2 μm, and the height of the pillar is 66 μm. H
It is desired to form a group of glass columns having a thickness of 5 to 10 μm. Since this structure can be formed by dry etching such as reactive ion etching (RIE), which has excellent vertical etching properties, process control and structure control are facilitated, and stable dye supply, retention, and photothermal conversion are realized. You can

In order to manufacture this columnar structure 66, first, referring to FIG.
As shown in (a), a photoresist 68 is deposited on the glass substrate 14 in a shape corresponding to the planar pattern of the pillar. In this case, the region 68a without the photoresist 68 is a region where the columnar body is to be formed, but if the width of this region 67a, that is, the width (or diameter) w of the columnar body 67 is, for example, 1 μm, it is isotropic by the lithography technique. Since the photoresist 68 is processed by the reactive etching, the thickness d of the photoresist 68 is also about 1 μm.

Next, as shown in FIG. 39 (b), after the etching mask material 69 is vacuum-deposited on the entire surface, the mask material 69 present on the upper surface of the photoresist 68 is removed together with the photoresist 68 by the lift-off method. ) Area 68a as shown in FIG.
The mask material 69 is selectively left (in the planar pattern shape of the column) only on the. In this case, the mask material 69 is removed by the lift-off method.
In order to selectively leave the mask material 82a on the 82a with good controllability, the thickness t of the mask material 69 should be sufficiently smaller than the thickness w of the photoresist 68 (thus, the diameter of the pillars and the distance between the pillars), for example, 0.5 μm.
It must be m or less.

Then, the mask material left in this way
39 by using an etching gas 70 such as CF ₄ or the like.
The glass substrate 14 is subjected to reactive ion etching (RIE) to a depth shown by an imaginary line in (c), and the width (or diameter) is 1 μm.
The plurality of pillars 67 are formed at intervals of 1 μm.

Since such dry etching by RIE is excellent in vertical etching property, the columnar body 67 can be formed in an upright fine structure to form the immersion dye layer 21. However, as described above, the etching mask 69
The thickness t of the column can be formed with good controllability only if it is thinner than the diameter of the columnar body 67 and the interval w thereof from the condition of the lithography technique. Therefore, in order to obtain the elongated columnar body 67 having the height h, the condition that the etching rate (etching rate) of the etching mask 69 itself is sufficiently smaller than that of the glass substrate 14, that is, the condition that the etching selection ratio is large is required.

However, since the mask material considered to be usable up to now has an insufficient etching selectivity, the mask itself is also etched as the dry etching progresses, and as shown in FIG. The mask 69 may disappear before the glass substrate 14 is etched to the depth. This makes it extremely difficult to form the pillar 67 at a set height (for example, 6 μm).

Therefore, in order to increase the etching selection ratio, there is a method of changing the etching conditions, for example, lowering the power of RIE, but there is a limit in itself, and the etching time is too long to produce. Problems such as inferiority cannot be solved.

[0039]

SUMMARY OF THE INVENTION It is an object of the present invention to form a fine structure such as the columnar structure described above into a desired shape easily and with good controllability, even if the thickness of the etching mask and the etching conditions are limited. Method, and an etching mask used in this method.

[0040]

That is, according to the present invention, when a material to be processed (for example, a glass substrate or a glass layer) is processed by dry etching to form a fine structure, etching selection of an etching mask for the material to be processed is performed. The present invention relates to a method for forming a fine structure, in which the ratio (the etching rate ratio of the work material to the etching mask) is 12 or more.

In the method according to the present invention, since the etching selectivity of the etching mask used for dry etching is 12 or more, the etching rate of the etching mask with respect to the work material is extremely low. Even if there is a limitation, it is possible to always form a fine structure having a desired shape.

That is, when the etching mask can be provided only to a thickness equal to or less than the diameter of the pillar of the immersion dye layer or the distance between the adjacent pillars due to the above-mentioned limitation of lithography conditions, As an example, the height of the pillar is 6 μm and the maximum thickness of the etching mask is 0.5 μm.
When m, the etching selection ratio between the glass and the mask is 12 or more, but the etching mask used in the present invention has an etching selection ratio of 12 or more, so the condition is more than satisfied (however, the etching In consideration of variations and rounding of the mask edge due to etching, the etching selection ratio is preferably about 15 to 20 or more).

Therefore, even if the conditions of dry etching are not relaxed, the mask can sufficiently withstand dry etching for a long time, and its entire thickness remains without being etched. It is possible to form a fine structure having a desired shape, including the formation of a tall pillar. Further, by providing such a fine structure in the vaporization section or the ablation section, it becomes possible to manufacture a recording apparatus such as a laser beam printer having a head with high photothermal conversion efficiency.

In the method according to the present invention, at least one selected from the group consisting of silicon oxide, silicon nitride, silicon and aluminum oxide is used as the material to be the dip dye layer described above, and palladium and / or nickel is used. Is preferably used as an etching mask. Palladium and nickel, which are the constituent materials of this etching mask, are very suitable materials because their etching selection ratios are much higher than 12. Palladium and nickel may be used individually as an etching mask, but an alloy containing these may be used, or the etching mask may be formed of a laminated body of palladium and nickel.

Further, in forming the fine structure, reactive ion etching using a gas containing a fluorine compound, particularly a fluorocarbon such as CF ₄ , CHF ₃ , C ₂ F ₆ or a gas containing SF ₆ or the like. It is desirable to perform dry etching by (RIE).

Then, as described above, the method according to the present invention is effective when the thickness of the etching mask is set to be equal to or less than the mask width or the working width of the workpiece during dry etching.

Further, if the type and / or the thickness of the etching mask are made to differ in location, the shape of the fine structure can be changed depending on the location, and a shape suitable for the purpose or a shape advantageous for being provided in the vaporizing section. Can be obtained.

The present invention also relates to recording materials (eg liquefied dyes).
To be recorded by vaporization or ablation (eg photographic paper)
To a recording device (for example, a printer head or a laser beam printer) configured to perform predetermined recording.
The present invention also provides a method of manufacturing a recording apparatus, wherein the above-mentioned fine structure is formed in the recording material housing portion for vaporizing or ablating the recording material in manufacturing the above-mentioned method based on the method of the present invention.

In this manufacturing method, it is desirable to form a columnar structure for supplying and holding the recording material by a capillary phenomenon as a fine structure.

The recording apparatus manufactured by this manufacturing method may be configured as a printer head, or this printer head is incorporated and a recording material accommodating portion is provided.
The recording apparatus may include a recording medium supporting unit that faces the recording medium with respect to the recording medium storage unit, and a heating unit that heats the recording medium and causes the recording medium to fly to the recording medium.

Furthermore, the present invention also provides the above-mentioned etching mask (in particular, an etching selection ratio of 12 or more) used for carrying out the above-mentioned respective methods according to the present invention.

The present invention is suitable for the recording head for the non-contact type dye vaporization printer described above, which is configured to move (especially fly) to the recording medium through the gap. However, it is also applicable to the recording head (thermal head or the like) for the contact type thermal transfer printer described above.

[0053]

The present invention will be described in more detail with reference to the following examples, but it goes without saying that the present invention is not limited to the following examples.

First, the gist of a method for forming a fine structure, for example, a columnar structure 76, according to the present invention will be described with reference to FIGS.

The columnar structure 76 is formed in the vaporizing portion or ablation portion of the printer head of the laser beam printer, and as shown in FIG. 1, it is formed on the upper surface of the substrate 14 having a large thickness T as a head substrate. , An etching mask 79 having a thickness t having an etching selection ratio of 12 or more with respect to this substrate is spaced (or width) in a plane pattern shape of a columnar structure.
It is formed by w.

Then, using the etching mask 79, reactive ion etching or reactive sputter etching (RIE) is performed with the etching gas 70, and the substrate 14 in the region without the mask 79 is vertically moved to a depth h indicated by an imaginary line. Selectively by etching. As a result, as shown in FIG. 2, the upright columns 67 having a height h are formed in the width w at a predetermined interval (which may be equal to the width w) immediately below the mask 79, and a fine column structure is formed. An immersion dye layer 71 made of 66 is produced.

It should be noted that, as described above, the thickness t of the mask 79 is difficult to be larger than the minimum dimension of its width w (that is, t <w, for example, t = 0.5 w). Nevertheless, since the mask 79 is formed of a material having a large etching selection ratio of 12 or more with respect to the substrate 14, the depth of the substrate 14 (that is, the height of the pillar 67) intended for the substrate 14 h
Is to be able to perform etching reliably and with high precision.

For example, when quartz glass is used as the substrate 14, the maximum thickness t of the etching mask 79 is 0.5 μm.
When the mask width w is 1 μm, the height of the pillar 67 (etching depth of the substrate 14) h is 6 μm or more, and the etching selection ratio between the substrate 14 and the mask 79 is 12 μm.
The above is an essential condition. On the other hand, since the etching selection ratio of the etching mask 79 according to the present invention is 12 or more, the substrate 14 is set to a predetermined 6 by the above RIE.
Since the etching can be easily performed to the depth of μm with good controllability, the columnar body 67 having the height h (= 6 μm) can be reliably formed.

For this purpose, it is indispensable to form the etching mask 79 with a material having a sufficiently large etching selection ratio of 12 or more, and it is particularly preferable to form it with palladium or nickel.

On the contrary, in the case of the above-mentioned etching mask 69 (described in FIG. 39), the etching selection ratio is small,
For example, when a resist is used for the etching mask 69, the etching rate is as high as 20 to 30% of the substrate glass 14 and the etching selection ratio is as small as about 4. Therefore, as the etching of the substrate glass 14 progresses, the mask 69 itself is also etched. Therefore, it is extremely difficult to form a columnar body having a target height as shown in FIG. 39 (d).

Moreover, in the method described with reference to FIG. 39, in order to etch to the target height h, a method of lowering the power of RIE, for example, may be considered in order to increase the etching selection ratio, but it is based on the present invention. According to the method, since the etching selection ratio of the etching mask 79 itself is made sufficiently large, there is no need to reduce the power of RIE, so that the desired fine columnar structure 66 can be produced in a short time with good productivity. Can always be formed.

In the above method according to the present invention, the etching mask 79 is preferably made of palladium or nickel, but may be an alloy containing these or a laminated film of these. The substrate 14 may be formed of at least one selected from the group consisting of silicon oxide, silicon nitride, silicon and aluminum oxide.

Further, the thickness t of the etching mask 79 needs to be sufficiently smaller than its width (that is, its maximum thickness should be smaller than the minimum dimension of the pattern). In the method based on (1), a columnar body 67 having a height h of 6 to 10 μm can be formed.

In the case of a normal semiconductor dry etching process, since the etching rate is, for example, 20 nm / min (1.2 μm / hr) when using an Al mask, this condition is kept as it is for the height h = 6 to 10 μm. When applied to the formation of the columnar body 67, it takes about 6 hours or more to complete the etching. Such deep etching is not carried out in a normal semiconductor process, and is a process peculiar to the pillar 67 according to the present invention. Further, if it is necessary to increase the discharge power in order to shorten the etching time, this lowers the etching selection ratio of the mask to the substrate, and the mask is easily etched. On the other hand, according to the present invention, since a mask having a large etching selection ratio is originally used, the degree of damage to the mask is small even if the discharge power is increased,
Deep etching can be performed in a short time.

The etching gas usable for RIE is a gas containing fluorocarbon such as CF ₄ , CHF ₃ and C ₂ F ₆ (which may be composed of fluorocarbon only, but CF ₄ It is desirable that other gas components such as + H ₂ , CF ₄ + O _{2 and} the like are contained from the viewpoint of etching property),
Alternatively, it is a gas containing an SF ₆ type fluorine compound.
The dry etching is not limited to the above RIE,
Plasma etching, ion etching, etc. are also applicable.

Next, the above method according to the present invention will be described with reference to FIGS.
FIG. 10 will be described more specifically. 3 to 9 are schematic cross-sectional views showing an example of a step of forming a fine columnar structure at each stage,
FIG. 10 shows a schematic external shape of the completed fine columnar structure.

First, as shown in FIG. 3, quartz glass having a thickness T is used as the substrate 14. However, the substrate material is not limited to quartz glass, but glass such as lead-containing glass (silicon oxide)
Alternatively, silicon, aluminum oxide, or a substrate on which silicon nitride or a thin film of the above material is formed by CVD (chemical vapor deposition), sputtering, vapor deposition, or the like may be used.

Next, as shown in FIG. 4, the quartz glass substrate 14
A silicon layer 80 is vacuum-deposited thereon to a thickness of 0.1 to 1 μm, for example. Here, the provision of the silicon layer 80 improves (1) the adhesion between the substrate 14 and the photoresist described later,
(2) This is because diffused reflection in the substrate 14 is reduced at the time of exposure of the photoresist described later during photolithography, and patterning property is improved.

Instead of the silicon layer 80, a metal thin film or the like having the same function as the above (1) and (2) may be used. However, in the case of silicon or silicon nitride, the substrate 14 and the substrate 14 can be formed simultaneously with the RIE process described later. Since it is etched, the process is simplified. Note that the silicon layer 80 may not be provided if there is no problem in patterning the photoresist or if the adhesion can be improved by surface treatment before photolithography.

Then, as shown in FIG. 5, a photoresist 88 is formed.
After being deposited to a thickness d, the photoresist 88 is processed into a pattern corresponding to the planar pattern of the columnar structure by photolithography. That is, the photoresist 88 is removed by etching only the region 88a having the width w corresponding to the width of the pillar. In this case, the width of the resist left between the removed regions 88a-88a may be w.

Then, as shown in FIG. 6, a palladium (Pd) layer 79 is vacuum-deposited on the entire surface as an etching mask material to a thickness t = 0.3 μm. The palladium layer 79 is formed to be thinner than the photoresist 88, and the photoresist 88 is formed.
And the silicon layer 80 in the region 88a are separated and deposited. Mask material 79 is palladium (Pd)
However, it may be nickel (Ni),
It may be an alloy containing palladium and / or nickel.

Then, the photoresist 88 and the mask material 79 on the upper surface thereof are removed by a lift-off method to form an etching mask pattern 79 of RIE with a width w as shown in FIG. However, instead of this lift-off method, the method shown in FIG. 6 in which the mask material is vapor-deposited over the entire surface and the mask material is left only in the region 88a by etching back may be adopted.

What should be noted in the steps shown in FIGS. 5 to 7 is that the thickness t of the mask metal 79 is difficult to be thicker than the minimum dimension of the pattern. Minimum line width (li
ne & space) w is, for example, 1 μm, the thickness of the resist 88 etched by lithography in FIG. 5 is also about 1 μm.
Therefore, in order to form a pattern by the lift-off method described above, the thickness t of the mask metal 89 that can be formed with good control
Is, for example, 0.5 μm or less (for example, 0.3 μm). However, if a sidewall method using a multi-layer resist or etch back is used, this is not the limitation, but the process becomes complicated and further process control becomes necessary.

Even if there is such a limitation on the mask thickness, the mask metal (etching mask) 79 according to the present invention has a large etching selection ratio of 12 or more. Can be formed into That is, as shown in FIG. 8, a mask 79 is used to perform vertical etching of the base by reactive ion etching (RIE) using a hydrogen fluoride-containing gas 70 such as CF ₄ , and for example, width w = 1 to 2 μm and height h. A columnar structure 66 composed of a columnar group 67 of 6 to 10 μm is produced. The etching gas for RIE is a system containing fluorocarbons (CF ₄ , CHF ₃ , C ₂ F _6, etc.) such as CF ₄ + H ₂ , CF ₄ + O _2, etc.

At the time of this RIE, the etching selectivity of the mask 79 to the glass substrate 14 is sufficiently large as 12 or more. Therefore, for the reason described above, a large number of elongated pillars 67 having a height h are formed in the width w (the interval is also w). It can be formed with high precision.

In the final step of FIG. 9, the Pd film (mask) 79 is removed with aqua regia (hydrochloric acid + nitric acid), and the Si layer 80 is removed with hydrofluoric acid or KOH (or NaOH).
The substrate 14 is not etched with aqua regia. In addition, the Si layer 80
Although the substrate 14 may also be etched during the etching, the SiO ₂ layer 80 is sufficiently thinner than the substrate 14 and does not affect the shape of the columnar structure. If Pd film removal is not needed, the process ends at the stage of FIG. In this case, the Pd film becomes a photothermal conversion layer. FIG. 10 shows a pillar structure 66.
The appearance of the immersion dye layer 71 made of is shown after completion.

Next, in the above-described method, particularly in the RIE process of FIG. 8, when CF ₄ + H ₂ system excellent in vertical etching property is used as the etching gas 70 (CF ₄ = 12 sc
cm, H ₂ = 3 sccm, vacuum degree 2.5 Pa, discharge power 500 W,
The etching rate and etching selectivity (vs. SiO ₂ ) of various materials that can be used as the material of the self-bias 630 V), the substrate 14 or the mask 79 are shown in Table 1 below.

[0078]

The larger the etching selection ratio between the substrate material and the etching mask metal, the more room there is in designing a structure such as the columnar structure 66 described above, and the design determines the necessary conditions. For example, when etching quartz (SiO ₂ ) to 6 μm and the mask thickness is 0.5 μm at maximum, the selection ratio is
12 (substantially about 15 to 20 or more when considering variations and rounding of the mask edge due to etching) or larger is a necessary condition.

Etching selectivity ratio 12 that satisfies these conditions
The above mask material is Pd when the substrate material is SiO _2.
And Ni, and Pd and Ni are also suitable when the substrate material is SiN _x or Si, but Al is used when SiN _x.
And Pt can also be used. When Al is used as the mask material, although the etching selectivity ratio to SiO ₂ is slightly smaller than 12, the desired columnar structure is still difficult to form, and Al grains are easily peeled off to cause surface roughening. Performance easily deteriorates.

Further, as the etching gas 70, CF ₄ + O is used.
_{When 2} is used (CF ₄ = 18sccm, O ₂ = 2sccm, vacuum degree 3.5Pa, discharge power 200W, self-bias 400V)
In the same manner as above, the etching rate and the SiO ₂ etching selection ratio for various materials were as shown in Table 2 below.

[0082]

From Table 2, the mask materials having an etching selection ratio of 12 or more are Pd and Ni when the substrate material is SiO ₂ (by the CVD method), and SiO ₂ (quartz plate).
Or Si is Ni, and the substrate material is SiN _x
In this case, Pd and Ni are preferable, but Al ₂ O ₃ may be used. In this system, the mask material is preferably Ni rather than Pd.

As the etching gas, the above-mentioned fluorocarbon is usually used for SiO ₂ and SiN _x , but not limited to this, SF ₆ system can also be used for Si.

FIG. 11 illustrates the vaporization portion (or ablation portion) 17 having the fine columnar structure 66 formed by the above-mentioned method and the mechanism of the vaporization of the dye therein.

That is, while the liquefied dye 22 is supplied upward by the capillarity phenomenon through the gaps (continuous pores) 39 between the substantially vertical columns 67 integrally formed from the bottom surface of the glass substrate 14, the laser light is emitted. It is vaporized by the irradiation of L, and the vaporized dye 32 flies and adheres to a recording medium such as photographic paper, and recording of a predetermined pattern is performed. It is preferable that the diameter w of each pillar 67 is about 1 to 2 μm, the height h is 6 to 10 μm, and the interval is about 1 to 2 μm. The columnar body 67 may have a prismatic shape instead of the cylindrical shape.

In order to prevent the heat dissipation of the dye and to efficiently heat the dye by the heater 16 and the laser light L, it is preferable to provide the heat insulating material layer 89 on the bottom surface of the substrate 14 as shown by the phantom line. desirable. A polyimide resin is suitable as a material of the heat insulating material layer 89.

The vaporization of the liquefied dye 22 may be performed only by irradiating the laser light L, but the vaporization efficiency can be improved by using a substance that absorbs the laser light L in addition to the laser light irradiation. The laser light absorbing (photothermal conversion) substance is required to have sufficient heat resistance to continuously absorb the laser light L, and has a metal thin film having an absorbing ability in a wavelength region matching the wavelength of the laser light L. A laminate of a metal thin film and a ceramic thin film having a high dielectric constant can be preferably used.

Such a laser light absorbing substance can also be used by adding it to a dye. For example, it was confirmed that the light-heat conversion efficiency was improved by adding about 2 parts by weight of the cyanine-based light absorbing material to 100 parts by weight of the dye. As the light absorber, in addition to the cyanine-based, carbon black, fine particle-based light absorbers such as metal fine particles and phthalocyanine-based dyes, naphthalocyanine-based dyes, organic dyes such as anthraquinone-based dyes, or organometallic dyes, etc. A dye or pigment having excellent heat resistance can be uniformly dispersed in the dye before use.

Further, in order to efficiently vaporize the liquefied dye 22 by the laser light L, a photothermal conversion layer 90, for example, a cobalt-nickel alloy layer may be deposited on the substrate 14 as shown in FIG. . By this vapor deposition, including on each pillar 67,
A metal vapor deposition layer 90 is also formed under the gap 39 between the pillars 67.

FIG. 13 shows a head 100 of a dye vaporization type laser beam printer in which the immersion dye layer 71 having the columnar structure 66 is provided in the vaporization section 17. The head 100 is basically the same as that shown in FIG. 34 except for the vaporizing section 17. In this printer head, as described above, the columnar structure 66 that is sufficiently higher in diameter than the vaporization portion can be produced, so that the dye can be sufficiently held and supplied, and highly efficient and high-speed printing can be performed. be able to.

14 to 18 show a method of forming various columnar structures having a shape different from that of the columnar structure 66 and the columnar structures.

In these structures, the mask metal according to the present invention is used at least in part as a pattern of the RIE mask for forming the columnar structure 66 of the dye vaporization portion, and (a). The type of mask metal differs depending on the location (Fig. 14), (b). The thickness of the mask metal varies depending on the location (FIGS. 15 and 16), (c). (A) and (b) are used in combination.

In the mask of FIG. 14, if the etching rate of the mask 79a (having an etching selection ratio of 12 or more according to the present invention) is lower than that of the mask 79b (this may be a normal material), RIE is performed. Since the mask 79b is sometimes removed first, a pillar structure 66 having a pillar height distribution as shown by 67a and 67b in FIG. 17 (one having a height of 10 μm and the other having a height of 5 μm) is formed in self-alignment. . When the etching rates are 79a and 79b, which are opposite to the above, a shape as shown in FIG. 18 is obtained.

As shown in FIGS. 15 and 16, even in the mask according to the present invention, when the mask thickness has a distribution depending on the location (for example, one has a thickness of 0.8 μm and the other has a thickness of 0.4 μm).
Also in m), a columnar structure 66 having the shape shown in FIGS. 17 and 18 is obtained in the same manner as above.

As described above, when the mask metal according to the present invention is used in part or in whole, the mask has different structures (that is, different materials and thicknesses) depending on places, so that the degree of freedom in designing the columnar structure is increased. And the optimization of the dye vaporization part structure can be performed. Comparing the structures of FIGS. 17 and 18, as shown in FIG. 17, the pillars 67b are formed in the inner region of the pillar structure 66.
When the height of the liquefied dye 22 is low, the liquefied dye 22 shown by the phantom line is surrounded by the high pillar 67a around it,
Since it is easily held, the dye holding amount is increased and the vaporization efficiency can be expected to be improved.

Next, referring to FIGS. 19 to 24, a schematic of a non-contact type dye vaporization type laser beam printer (for example, a video printer having a serial type head) using the head 100 having the columnar structure in the vaporization section is described. The physical structure will be described.

In this dye vaporization type laser beam printer (similarly to the above-mentioned thermal transfer type printer), for example, three sets of printer heads (four sets when a black one is prepared separately) are used for multicolor printing. ) Prepared and miniaturized each head part and made them close to each other to form a head part for multicolor printing.

That is, as shown in FIG. 20, three one-dimensional laser arrays 30 for each color are arranged in parallel in the head scanning direction Y. Specifically, as clearly shown in FIG. 19, for example, for full color, cyan, magenta, and yellow dye reservoirs 15C, 15M, and 15Y are provided on the respective bases 14, and each dye storage portion or dye supply head portion 37C, 37M and 37Y are formed, and the dyes of the respective colors are supplied to the vaporizing sections 17C, 17M and 17Y in rows which form a large number of 12 to 24 dots.

For each vaporizing part, each laser beam emitted from a multi-laser array 30 in which 12 to 24 corresponding lasers (particularly semiconductor laser chips) 18 are arranged in an array is provided with a large number of condenser lenses 19. The light is condensed by the microlens array 31 in which is arranged (36 is a mirror for guiding the laser light L in the perpendicular direction).

As the condenser lens, the illustrated lens system may be used, but a single large-diameter condenser lens 38 indicated by a virtual line may be used. The lens 38 is formed so that the refraction path changes so that the light emission position corresponds to the vaporization parts 17C, 17M, and 17Y described above according to the light incident position.
The multi-laser array 30 is driven and controlled by the control IC 34 provided on the substrate 33, and the heat sink 35 is also provided.
Is designed to allow sufficient heat dissipation.

In the case of mono-color printing, FIG. 22 and FIG.
As shown in 23, by producing a one-dimensional laser array 30 and making each laser element operate independently and in parallel, it is possible to easily obtain a printing speed that is more than one time the number of beams (for example, 24 beams). With the laser array
24 times faster).

Each of the printer heads 100 described above accommodates as many liquefied dyes 22 as the number of recording dots in the dye accommodating portion 37, and the laser 18 also emits each light emitting point 18a corresponding to the number of recording dots. They are arranged in an array. Even in the above-mentioned thermal transfer type printer which does not depend on the laser 18, the heating portion of the thermal head 1 is similarly arranged in a dot shape.

Further, each of the printers described above has a vertical direction (X
(Direction) paper feed and horizontal (Y direction) scan of the head in the direction orthogonal to the X direction, and printing is performed. These vertical paper feed and horizontal head scan are performed alternately. Is configured.

In the printer 81 of this embodiment, the printer head 100 is orthogonal to the paper feed direction X of the photographic printing paper 50 by the head feed shaft 42 and the head support shaft 43 which are feed screw mechanisms, as shown in FIGS. The head is reciprocally movable in the head feeding direction Y.

On the upper side of the head 100, there is rotatably provided a head receiving roller 44 for supporting the printing paper 50 so as to sandwich it. The printing paper 50 is a paper feed drive roller.
It is sandwiched between the 45 and the driven roller 46 and moved in the paper feeding direction X.

The head 100 is connected to a head drive circuit board (not shown) and the like via a flexible harness 87.

FIG. 25 shows a laser vaporization type color video printer (laser vaporization type printer) 10 having a line type head.
0 is shown, and a cassette 3 for receiving the recording paper 50 and a flat base 4 for recording are provided on the frame chassis 2 covered with the housing 2a.

On the recording paper discharge port 2b side in the housing 2a,
A paper feed drive roller 6a that is driven by the motor 5 and the like is provided, and a pressure contact driven roller 6b that holds the recording paper 50 with the paper feed drive roller 6a with a light pressure is provided. A head drive circuit board 7 on which a drive IC 80 is mounted and a DC power source 8 are provided above the cassette 3 in the housing 2a. The head drive circuit board 7 and the head portion (recording portion) 10 arranged on the plane base 4 are connected via a flexible harness 7a.

The head portion 100 is, for example, yellow 8
(Y), magenta (M), and cyan (C) solid powder containing vaporizable dyes, each solid dye storage tank (collectively denoted by reference numeral 110) is provided, and the same as described above. The liquefied dye can be selectively laser-heated and transferred onto the recording paper 50.

The printer head 100 of this embodiment, the laser beam printer 81 using this printer head, and the recording method using them are as follows. The dye 22 is heated and vaporized by the laser light L from the laser 18 Let it fly to 50,
Since the transfer is performed, the same effect as that described for the non-contact type dye vaporization type laser beam printer can be obtained.

26 to 32 show another embodiment in which the present invention is applied to a semiconductor integrated circuit (IC). That is, the above-described embodiment relates to a laser beam printer, but here, an example in which the fine structure according to the present invention is incorporated in a semiconductor IC will be shown.

First, as shown in FIG. 26, an RIE mask 79 made of nickel or palladium having an etching selection ratio to Si of 12 or more according to the present invention is formed on one main surface of a P-type silicon substrate 124, for example, as shown in FIGS. A predetermined pattern is formed in the same manner as described in 7.

Then, as shown in FIG. 27, the silicon substrate 124 is selectively etched by RIE to an intended depth h ′ by an etching gas 70 containing a fluorine compound such as CF ₄ + H ₂ for isolation. Form the groove 120. In this case, since the mask 79 has a large etching selection ratio, the groove 120 having a depth h ′ of several μm or more can be formed easily and with good controllability.

Next, as shown in FIG. 28, after the mask 79 is removed by etching with aqua regia (HCl + HNO ₃ ), the groove 12 is removed.
SiO _{2 on the} entire surface including 0 by CVD (Chemical Vapor Deposition)
Deposit layer 121.

Then, as shown in FIG. 29, the SiO ₂ layer 12 is formed by etching back so that the surface of the substrate 124 becomes flat.
Etch 1 and leave only in groove 120. Si in the groove 120
The O ₂ layer 121 performs insulation separation between the element regions.

[0117] Then, as shown in FIG. 30, after forming a SiO ₂ layer 122 by a CVD or thermal oxidation, as shown in FIG. 31, windows are opened the SiO ₂ layer 122 in a predetermined pattern, N-type impurity (For example, phosphorus) is thermally diffused to form N-type diffusion regions 123 and 12
Form 4 respectively.

Next, as shown in FIG. 32, a P-type impurity (for example, boron) is thermally diffused in the diffusion region 123 to form a P-type diffusion region 125. Then, electrodes of an emitter E, a base B, and a collector C (not shown) are deposited to form a PNP type bipolar transistor Tr, and a diffusion region 124 is also provided.
Form electrode elements T ₁ and T ₂ as resistance elements. In addition, thermal diffusion or the like can be applied to a region adjacent to each of these elements or a region (not shown) to incorporate a desired element.

As described above, in order to form the isolation region 121 of the semiconductor IC, the RIE mask and etching according to the present invention can be applied. However, due to the etching selection ratio, even a fine pattern can be formed quickly and accurately. What can be done is advantageous for high integration and mass productivity of the device.

Although the embodiments of the present invention have been described above, the above embodiments can be further modified based on the technical idea of the present invention.

For example, a dry etching method other than the above-mentioned RIE may be adopted, and the etching mask can be variously selected according to the workpiece. This also applies to the etching gas.

Further, the fine structure to be formed is not limited to the one described above. For example, in the case of a columnar body, its height, plane or cross-sectional shape, density, etc. may be changed, and its formation location is also minute. It can be applied wherever patterning or porosity or expansion of surface area is required.

Further, not only the dye vaporization type transfer system but also the transfer system by the ablation described above is possible, and in any case, the dye or the recording material flies and is transferred.

As the energy for vaporizing, sublimating or ablating a recording material such as a dye, a heating beam other than laser light may be used, or another heating method such as resistance heating may be used. For this purpose, a conductive substance can be added to the recording material, and a resistance film for resistance heating can be provided on the above-mentioned small columnar body having a capillary action.
An appropriate heating method can be adopted to obtain density gradation.

Further, the number of recording material containing portions and the number of dots for containing the recording material (dye), and the number of beams (the number of light emitting points) of the laser array corresponding thereto may be variously changed, and the arrangement shape thereof may be changed. The size and the like are not limited to those described above.

The structure and shape of the head and printer are
It may have an appropriate structure and shape other than those described above, and other appropriate materials may be used for the material of each part constituting the head. With respect to the recording dyes, full-color recording can be performed with three colors of magenta, yellow, and cyan (further, black is added), and two-color printing, one-color monocolor, or monochrome recording can be performed.

The printer is not limited to the non-contact type printer described above, but the present invention can be applied to the above-mentioned thermal transfer type printer as long as it is a type (serial type) that scans line by line. However, in this case, a signal for selecting each color is supplied to the thermal head.

Further, as in the above-mentioned example, the solid dye is once made into a liquid and vaporized to perform recording, or the solid dye is heated by laser light to be directly vaporized (that is, sublimated) to perform recording. It is also possible to store a liquefied dye (liquid at room temperature) in the dye reservoir. Furthermore, the recording material can be transferred to the photographic paper by a phenomenon other than the above-mentioned flight (for example, vaporization), and in this sense, the non-contact method is not required. Further, unlike the above-described printer, laser light may be emitted from above the head to perform recording on a recording paper located below the laser light.

[0129]

As described above, according to the present invention, when a material to be processed (for example, a glass substrate or a glass layer) is processed by dry etching to form a fine structure, the etching selectivity ratio of the etching mask to the material to be processed ( Etching rate ratio of work material to etching mask)
Since the etching rate is 12 or more, the etching rate of the etching mask with respect to the work material is extremely low.Therefore, even if the thickness of the etching mask or the etching conditions are limited, a fine structure of a desired shape can be easily and easily controlled. Can be formed.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing the characteristics of a fine structure (columnar structure) forming process according to the present invention at one main stage.

FIG. 2 is a cross-sectional view showing the characteristics of the forming process for other main steps.

FIG. 3 is a cross-sectional view showing a step in the process of forming a columnar structure provided in the vaporizing portion of the printer head according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view showing another stage of the forming process.

FIG. 5 is a cross-sectional view showing another stage of the forming process.

FIG. 6 is a cross-sectional view showing another stage of the forming process.

FIG. 7 is a cross-sectional view showing another stage of the forming process.

FIG. 8 is a cross-sectional view showing another stage of the forming process.

FIG. 9 is a cross-sectional view showing still another stage of the forming process.

FIG. 10 is a perspective view of FIG. 9.

FIG. 11 is a cross-sectional view of a vaporization unit provided with the columnar structure.

FIG. 12 is a cross-sectional view of the vaporization section provided with a light absorbing substance.

FIG. 13 is a schematic cross-sectional view of a printer head having the vaporization unit.

FIG. 14 is a cross-sectional view showing a step in the process of forming a columnar structure according to another embodiment of the present invention.

FIG. 15 is a cross-sectional view showing a similar step according to another embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a similar step according to another embodiment of the present invention.

FIG. 17 is a cross-sectional view showing a pillar structure according to another embodiment.

FIG. 18 is a cross-sectional view showing a pillar structure according to another embodiment.

FIG. 19 is an exploded perspective view of a printer head according to another embodiment of the present invention.

FIG. 20 is a schematic rear view showing the printer head and its scanning state according to the embodiment.

FIG. 21 is a schematic perspective view of the printer seen from below.

FIG. 22 is an exploded perspective view of a printer head according to another embodiment of the present invention.

FIG. 23 is a schematic rear view showing the printer head and a scan state thereof.

FIG. 24 is a schematic perspective view of the printer seen from below.

FIG. 25 is an exploded perspective view of a printer according to another embodiment of the present invention.

FIG. 26 is a cross-sectional view showing a step in the process of forming a fine isolation structure according to still another embodiment of the present invention.

FIG. 27 is a cross-sectional view showing another stage of the forming process.

FIG. 28 is a cross-sectional view showing another stage of the forming process.

FIG. 29 is a cross-sectional view showing another stage of the forming process.

FIG. 30 is a cross-sectional view showing another stage of the forming process.

FIG. 31 is a cross-sectional view showing another stage of the forming process.

FIG. 32 is a cross-sectional view showing still another stage of the forming process.

FIG. 33 is a front view of the main parts of a printer using a conventional thermal recording head.

FIG. 34 is a schematic cross-sectional view of a printer devised before the completion of the present invention.

FIG. 35 is a cross-sectional view showing an immersion dye layer (glass beads) provided in a vaporizing portion of a head of the printer.

FIG. 36 is a cross-sectional view and a plan view showing a light-absorbing air bridge provided in the vaporization section.

FIG. 37 is a cross-sectional view showing the method of forming the air bridge in the order of steps.

FIG. 38 is a cross-sectional view showing an immersion dye layer (columnar structure) provided in the vaporization section.

FIG. 39 is a cross-sectional view showing the method of forming the columnar structure in the order of steps.

[Explanation of symbols]

 10, 100 ・ ・ ・ Printer head 11 ・ ・ ・ Air gap 14 ・ ・ ・ Base 15 ・ ・ ・ Dye reservoir 16 ・ ・ ・ Heater 17, 17C, 17M, 17Y ・ ・ ・ Vaporizer 18 ・ ・ ・ Semiconductor laser 18a ...・ Emitting point 19 ・ ・ ・ Condensing lens 20, 90 ・ ・ ・ Photothermal conversion layer 21, 71 ・ ・ ・ Dip dye layer 22 ・ ・ ・ Liquefied dye 30 ・ ・ ・ Multilaser array 31 ・ ・ ・ Macro lens array 32 ・..Vapor dye 37 ... Dye accommodating section 50 ... Printing paper 66 ... Pillar structure 67 ... Pillars 68, 88 ... Photoresist 68a, 88a ... Area without resist 69, 79 ... Etching mask 70 ... Etching gas 80 ... Silicon layer 89 ... Insulating material layer L ... Laser light w ... Mask width t ... Mask thickness d ... Resist thickness h・ ・ ・ Column height T ・ ・ ・ Board thickness

Claims (10)

[Claims] 1. When a work material is processed by dry etching to form a fine structure, the etching selectivity ratio of the etching mask to the work material (etching rate ratio of the work material to the etching mask) is set to 12 or more. , Method for forming fine structure. 2. The formation according to claim 1, wherein at least one selected from the group consisting of silicon oxide, silicon nitride, silicon and aluminum oxide is used as a work material, and palladium and / or nickel is used as an etching mask. Method. 3. The forming method according to claim 1, wherein dry etching is performed by reactive ion etching using a gas containing a fluorine compound. 4. The forming method according to claim 1, wherein the thickness of the etching mask is equal to or less than the mask width or the processing width of the workpiece. 5. The formation method according to claim 1, wherein the type and / or the thickness of the etching mask are made different locally. 6. A columnar structure is formed as a fine structure,
The forming method according to claim 1. 7. A recording material accommodating portion that vaporizes or ablates a recording material when the recording material is made to fly to a recording medium by vaporization or ablation to perform predetermined recording. Forming a microstructure by the method according to any one of claims 1 to 6,
Recording device manufacturing method. 8. A columnar structure for supplying and holding a recording material by capillarity is formed as a fine structure,
The manufacturing method according to claim 7. 9. A recording material accommodating portion, a recording material supporting means for facing a recording material to the recording material accommodating portion, and a heating means for heating the recording material to fly to the recording material. The manufacturing method according to claim 7 or 8, wherein a recording device having: 10. The etching mask according to claim 1, which is used for carrying out the method according to any one of claims 1 to 9.