JPH0851137A - Transport equipment in semiconductor manufacturing equipment - Google Patents

Abstract

(57) [Abstract] [Objective] A transfer device in a semiconductor manufacturing device capable of supplying and removing electricity from a voltage supply device to a transfer table holding a semiconductor such as a silicon wafer by electrostatic attraction without using contacts. provide. [Configuration] At each stop position of the carrier 1 of the carrier path 2,
Electric power is supplied from the winding 303 and the core 304 provided in the voltage supply device 3 to the core 203 and the winding 202 provided in the carrier 1 by the action of electromagnetic induction, and the capacitor 201 is supplied with power. Also, from the winding 306 and the core 305 to the core
The pulse signal is supplied to the 211 and the winding 210, and the thyristor 20
9 makes a roll call, and the charge is removed from the capacitor 201.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a carrier device in a semiconductor manufacturing apparatus, which comprises a carrier table provided with an electrostatic chuck for holding a semiconductor such as a conductor or a silicon wafer by electrostatic attraction.

[0002]

2. Description of the Related Art A transfer device for transferring a silicon wafer (hereinafter referred to as a wafer) used for manufacturing a semiconductor device is a transfer table having a transfer path and an electrostatic chuck for fixing and holding the wafer by electrostatic attraction. And a control device that controls the transfer of the transfer table. The electrostatic chuck is composed of an electrode and a dielectric material that are stacked inside the carrier. Then, when a voltage is applied to the electrodes while the wafer is placed on the dielectric, a potential difference is generated between the electrodes and the wafer, and the Coulomb force generated by this potential difference causes the wafer to move above the dielectric. Is adsorbed and held by Therefore, it is necessary to apply a voltage to the electrode of the moving electrostatic chuck in order to attract and hold the wafer while the carrier is being carried.

Therefore, a capacitor is provided inside the carrier so that a voltage is applied from the capacitor to the electrode when the carrier is being carried, and when the carrier is stopped, power is supplied to the capacitor. There is a device. (For example, Japanese Unexamined Patent Publication No. Hei 5-315429 “Semiconductor device transfer device”) In such a transfer device, a voltage supply device for supplying power to a capacitor is provided at each stop position of the transfer table on the transfer path. .

[0004]

By the way, in the above-described conventional carrier device, power is supplied from the voltage supply device provided at each stop position to the capacitors in the carrier table to the carrier table and the voltage supply device, respectively. This is done via the contacts provided. At these contacts, there is a possibility that a part or the like of the contacts will be dispersed as fine particles and float in the air due to an arc discharge generated by mechanical contact between the contacts or chattering between the contacts. Then, in a clean room of a semiconductor manufacturing factory, since fine particles generated by the contact point become one of the pollutants, it is necessary to consider to prevent the generation as much as possible.

The present invention has been made under such a background, and provides a carrier device in a semiconductor manufacturing apparatus capable of supplying power from a voltage supply device to a carrier table without using contacts. The purpose is to

[0006]

According to the first aspect of the present invention,
A carrier table provided with a carrier path, an electrostatic adsorption means moving along the carrier path, and a non-contact power receiving means for receiving power in a non-contact manner, and a non-contact means for supplying power in a non-contact manner to the non-contact power receiving means And a power supply unit provided with a power supply unit.

The invention according to claim 2 is input to control means for controlling the adsorption state of the electrostatic adsorption means provided in the transfer table and the control means provided in the transfer table. A non-contact receiving means for receiving the control signal in a non-contact manner, and a non-contact transmitting means for transmitting the control signal in a non-contact manner to the non-contact receiving means provided outside the carrier. A carrier device in the semiconductor manufacturing apparatus according to claim 2.

Further, the invention according to claim 3 includes a conveying path,
Semiconductor manufacturing comprising: a carrier including an electricity storage unit that moves along the carrier path and an electrostatic chucking unit; and a plurality of power supply units provided at predetermined stop positions of the carrier on the carrier path. In a carrier device of the apparatus, a non-contact power receiving unit provided in the carrier table for receiving electric power in a non-contact manner, and a non-contact power feeding unit for supplying electric power in a non-contact manner to the power receiving unit provided in the power supply unit And a conveying means in a semiconductor manufacturing apparatus.

According to a fourth aspect of the present invention, the changing means for changing the supply state of the electric power from the power storage means provided in the carrier to the electrostatic attraction means, and the changing means are provided in the carrier. A contactless receiving means for contactlessly receiving a control signal for controlling the changing means, and a contactless transmitting means for contactlessly transmitting a control signal to the contactless receiving means provided in the power supply means, The transport apparatus in the semiconductor manufacturing apparatus according to claim 3, further comprising:

The invention according to claim 5 is characterized in that:
A carrier table provided with a power storage unit that moves along the carrier path, an electrostatic adsorption unit, and a non-contact power receiver unit that receives power in a non-contact manner, and a non-contact power receiver unit of the moving carrier unit in a non-contact manner. And a non-contact power supply means capable of supplying electric power, and a carrier device in a semiconductor manufacturing apparatus.

[0011]

According to the above construction, electric power is supplied from the power supply means to the carrier through the contactless power supply means and the contactless power reception means without using any contact. With this electric power, the electrostatic attraction means holds the semiconductor wafer or the like by electrostatic attraction and moves on the transfer path.

Further, since the control means controls the attraction state of the electrostatic attraction means in accordance with the control signal transmitted from the non-contact transmission means to the non-contact reception means, the holding state of the semiconductor wafer or the like does not use the contact. Can be controlled.

Further, when the carrier is provided with the electricity storage means, the electric power supplied through the non-contact power feeding means and the non-contact power receiving means can be stored in the electricity storage means at the stop position of the carrier so that the electricity storage means can be moved. By supplying the electric power from the power storage means to the electrostatic attraction means inside, it is not necessary to continuously supply the electric power to the moving carriage.

Further, the changing means changes the supply state of the electric power from the power storage means to the electrostatic attraction means in response to the control signal transmitted from the non-contact transmission means to the non-contact reception means. The holding state can be controlled without using contacts.

Further, by supplying electric power to the non-contact power receiving means in the moving carriage by the non-contact power feeding means continuously or intermittently, the storage capacity of the power storage means supplied with power from the non-contact power receiving means. Can be made smaller.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view of a carrying device according to an embodiment of the present invention. In this figure, reference numeral 1 is a carrier, which includes an electrostatic chuck 100, a drive circuit 200, and the like inside. In this figure, the carrier 1 is an electrostatic chuck 10.
It is shown with the wafer 4 mounted on top of 0. Further, the carrier 1 includes a secondary circuit of a linear motor (not shown) and the like inside, and moves in the left and right directions toward this figure. Reference numeral 2 denotes a transfer path of the transfer table 1 laid between a plurality of semiconductor manufacturing apparatuses. Each transfer position of the transfer table 1 inside the transfer path 2 is provided with a voltage supply device 3, and the transfer table 1 is provided. A primary circuit (not shown) of a linear motor for carrying the paper is provided over the entire carrying path.

The electrostatic chuck 100 establishes electrical connection between the wafer 4 and the dielectric 101 whose upper surface is the holding surface of the wafer 4, the electrode 102 formed on the surface opposite to the holding surface of the dielectric 101. And a pin 103 provided for that purpose. Then, the electrostatic chuck 100 includes the electrode 102 and the wafer 4.
When a potential difference occurs between and, the wafer 4 is adsorbed and fixed onto the dielectric 101 by the Coulomb force generated by this potential difference.

The drive circuit 200 includes a capacitor 201 whose terminals are connected to the pin 103 and the electrode 102, a core 203 around which a winding 202 is wound, and an AC voltage output from the winding 202 to a terminal 204a and a terminal 204a. Input from terminal 204b and convert to DC voltage,
A rectifier circuit 204 which outputs from the terminal 204c (positive side) and the terminal 204d (negative side) and applies to the capacitor 201, a thyristor 209 which discharges the electric charge stored in the capacitor 201 when ignited through a discharge resistor 208, A core 211 around which a winding 210 is wound, and a diode 212 that rectifies the AC current output from the winding 210 and outputs the rectified AC current to a gate terminal of a thyristor 209 and a resistor 213. In this case, the core 203 and the core 211 are cores made of U-shaped ferrite or the like, and are arranged at the bottom of the carrier 1 in the direction shown in FIG. The rectifier circuit 204 includes a single-phase bridge rectifier circuit 204-1 including four diodes 205, 205, 205, 205 shown in FIG. 5A and one diode 205 shown in FIG. 5B. Half-end rectifier circuit 204-2, a plurality of diodes 205, 205 ... And a plurality of capacitors 20 shown in FIG.
6, 206, ... And Cockcroft-Walton rectifier circuit 204-3.
When a rectifying circuit that uses a voltage doubler rectifying connection such as the Cockcroft-Walton rectifying circuit 204-3 is used as the rectifying circuit 204, the output voltage of the winding 202 is set to another rectifying circuit shown in FIG. It is possible to make it lower than the case of using.

The voltage supply device 3 has a frequency of several kHz to several tens of KHz.
AC power source 301 for outputting the AC voltage, switch 302 composed of a relay or semiconductor switch which is ON / OFF controlled by a control circuit (not shown), and output voltage of AC power source 301 is applied when switch 302 is turned on Winding 3
03, and a core 304 around which a winding 303 is wound, and further, a core 305 around which a winding 306 is wound, and a pulse generator 307 including a monostable multivibrator that outputs a pulsed current, and the like. Equipped inside.

In this case, the core 304 is a core having the same shape and material as the core 203, and is arranged so as to face the upper surface of the conveying path 2. Then, as shown in FIG. 1, when the carrier 1 is stopped at a predetermined stop position, the core 203 and the core 304 face each other, thereby forming a magnetic circuit through which the core 203 and the core 304 pass. Further, similarly, when the carrier 1 stops at a predetermined stop position, a magnetic circuit that allows the core 211 and the core 305 to pass therethrough is formed. The magnetic circuits are formed separately from each other at positions where mutual inductance can be almost ignored.

Next, the operations of the carrier 1 and the voltage supply device 3 having the above construction will be described. Now, it is assumed that the carrier table 1 has moved from another stop position of the carrier path 2 (not shown) to a predetermined stop position facing the voltage supply device 3 shown in this figure and stopped. However, in this case, the capacitor 201 is charged with electric charge, the wafer 4 is adsorbed and held on the holding surface of the dielectric 101, and the switch 302 is off.

At this time, a predetermined pulse signal is output from the pulse generator 307 controlled by a control circuit (not shown), and a pulse current flows through the winding 306. Then
Since electromotive force is generated in the winding 210 by electromagnetic induction, the forward pulse current rectified through the diode 212 flows into the gate of the thyristor 209. Therefore, the thyristor 209 is ignited, and the charge stored in the capacitor 201 is discharged through the discharge resistor 208 and the thyristor 209. When the discharge progresses and the potential difference between the wafer 4 and the electrode 102 decreases to a predetermined potential difference or less, the adsorption state of the wafer 4 on the dielectric 101 is released. Then, when the discharge further progresses and the terminal voltage of the capacitor 201 becomes less than the on-voltage of the thyristor 209, the thyristor 209 turns off and the discharge ends.

Here, the wafer 4 is transferred to a predetermined semiconductor manufacturing apparatus by a robot or the like and subjected to a predetermined process. When the processing is completed and the wafer 4 is returned to the holding surface of the dielectric 101 again, the switch 302 is turned on by a control circuit (not shown). Switch 302
When is turned on, the AC voltage output from the AC power supply 301 is applied to the winding 303, and the induced electromotive force generates an AC voltage in the winding 202. Then, the AC voltage output from the winding 202 is converted into a DC voltage by the rectifier circuit 204, applied to the capacitor 201, and charging of the capacitor 201 is started. When the terminal voltage of the capacitor 201 rises and the charging is completed, a potential difference is generated between the wafer 4 and the electrode 102, so that the wafer 4 is again adsorbed and held on the dielectric 101.

Next, when a predetermined time required for charging the capacitor 201 has elapsed, the switch 302 is turned off by a control circuit (not shown). Then, the carrier 1
It moves again along the transport path 2 toward another stop position. Then, when the carrier table 1 stops at the next predetermined stop position, the releasing and returning operation of the suction of the wafer 4 is repeated as described above.

In this embodiment, since electric power is supplied from the voltage supply device 3 to the carrier 1 by electromagnetic induction, it is easy to electrically insulate the voltage supply device 3 and the carrier 1. Further, the potential of the wafer 4 mounted on the electrostatic chuck 100 can be set without being affected by the potential of the AC power supply 301 or the like.

Next, another embodiment of the present invention will be described with reference to FIG. FIG. 2 is an explanatory view of a transporting device similar to FIG. 1, and in this figure, parts corresponding to the respective parts of FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted. In FIG. 2, in addition to FIG. 1, the relay 20 is connected to the drive circuit 200a inside the carrier 1a.
9a and a diode 213a are provided, and an AC power supply 307a-1 and a switch 307a-2 are provided inside the voltage supply device 3a. These relay 209a and diode 213a are composed of the thyristor 209 and the resistor 2 shown in FIG.
It was provided in place of 13 and in this case the relay
209a has a contact 20 when a current flows through the electromagnetic coil 209a-1.
9a-2 is configured to turn on. Also, AC power supply
307a-1 and switch 307a-2 are pulse generators shown in FIG.
It is provided in place of 307, and the AC power source 3 described above is used.
The configuration is the same as 01 and the switch 302.

In the above structure, when the carrier 1a is stopped at the predetermined stop position shown in FIG. 2, the switch 307a-2 is turned on by the control circuit (not shown). Switch 30
When 7a-2 is turned on, the AC voltage output from the AC power supply 307a-1 is applied to the winding 306, and the induced electromotive force causes the winding 210
AC voltage is generated at. Therefore, the DC current half-wave rectified by the diode 212 flows to the electromagnetic coil 209a-1, so that the contact 209a-2 is turned on. When the contact 209a-2 is turned on, discharging of the electric charge of the capacitor 201 is started. On the other hand, the control circuit for controlling the switch 307a-1 described above is configured so that the elapsed time after turning on the switch 307a-2 is
The switch 307a-2 is turned off when the terminal voltage of 201 reaches the discharge time at which it falls below a predetermined voltage for releasing the adsorption of the wafer 4. When the switch 307a-2 is turned off, the contact 209a-2 is turned off and the discharge of the electric charge of the capacitor 201 is stopped. Here, the wafer 4 is transferred from the electrostatic chuck 100 to a predetermined semiconductor manufacturing apparatus by a robot or the like, and a predetermined process is performed. After that, the carrier table 1a and the voltage supply device 3a operate in the same manner as the embodiment shown in FIG.

According to the above-mentioned embodiment, it is not necessary to continue discharging the electric charge of the capacitor 201 until the discharge is completely completed. Therefore, the time required for discharging and charging is shortened as compared with the embodiment shown in FIG. be able to.

The circuit inside the carrier 1a shown in FIG. 2 does not have to be limited to that shown in the drawing.
A contact of a transfer type relay circuit having the electrode 102 as a base point is provided between the capacitor 201 and the electrode 102, and when the adsorption of the electrostatic chuck 100 is released, the contact is the electrode 1.
02 and pin 103 are short-circuited, and electrode 102 and capacitor are
On the other hand, when it is returned to the adsorption state so that it is separated from 201, its contact connects the electrode 102 and the capacitor 201, and each terminal voltage of the capacitor 201 becomes the electrode 102 and the pin 103.
The circuit can also be configured to be applied to and.
In the case of such a circuit configuration, since it is not necessary to discharge the capacitor 201, the relay 209a becomes unnecessary,
Further, since the charging of the capacitor 201 can be started at the time when its contact operates to short-circuit the electrode 102 and the pin 103, the charging time can be further shortened and the charging start time can be shortened as compared with the above-described embodiment. Can be accelerated.

Next, another embodiment of the present invention will be described with reference to FIG. FIG. 3 is an explanatory view of a transporting device similar to FIG. 1, and in this figure, parts corresponding to the respective parts of FIG. In FIG.
At the bottom of the housing of the carrier 1b, the winding 202 and the core 2 shown in FIG.
03, instead of the winding 210 and the core 211, four dielectrics (not shown), and electrodes 202b-1, 202b-2, 210b-1 and electrodes 202b-1, 202b-2, 210b-1 formed on the upper surface of each dielectric. 210b-2 is provided. Further, in the upper housing integrally formed with the transport path 2 of the voltage supply device 3b, four dielectrics (not shown) are used instead of the winding 303 and the core 304, and the winding 306 and the core 305. )
And electrodes 303b-1 formed on the lower surface of each dielectric,
303b-2, 306-1 and 306b-2 are provided.

Each of these electrodes has electrodes 202b-1 and 303b as shown in the figure when the carrier 1b is stopped at a predetermined stop position.
-1 face each other, electrodes 202b-2 and 303b-2 face each other, and electrode 21
The electrodes 0b-1 and 306b-1 face each other, and the electrodes 210b-2 and 306b-2 face each other. Therefore, when the carrier 1b is stopped at a predetermined stop position, four pairs of electrodes facing each other, each dielectric on the bottom of the casing of the carrier 1b, and each dielectric on the upper part of the casing of the voltage supply device 3b, The air gap between each housing forms four independent capacitors.

In the carrier table 1b and the voltage supply device 3b configured as described above, assuming that the carrier table 1b is stopped at the predetermined stop position shown in FIG. 3, pulse generation controlled by a control circuit (not shown) is performed. A predetermined pulse signal is output from the device 307. This pulse signal is applied to electrodes 306b-1 and 210b.
-1, 210b-2 and 306b-2 and the diode 212 are rectified and flow as a forward pulse current to the gate of the thyristor 209, and the thyristor 209 is ignited. After that, the thyristor 209 operates similarly to the embodiment shown in FIG. 1 to discharge the electric charge of the capacitor 201. Then, after the suction of the wafer 4 is released, the wafer 4 is transferred to a predetermined semiconductor manufacturing apparatus.

Next, the wafer 4 is placed on the electrostatic chuck 10 again.
If it is returned to the top of the dielectric 101 of 0, the switch 302 is turned on by a control circuit (not shown), and the alternating current output from the alternating current power supply 301 causes the electrodes 303b-1 and 202
It flows through b-1, 202b-2 and 303b-2 to the rectification circuit 204 and is rectified. Then, the rectified DC current is transferred to the capacitor 20.
The current flows to 1, and the capacitor 201 is charged. After that, when the terminal voltage of the capacitor 201 rises and the charging is completed, a potential difference occurs between the wafer 4 and the electrode 102, so that the wafer 4 is again adsorbed and held on the dielectric 101.
Next, after the switch 302 is turned off, the carrier 1b moves to the next stop position. Then, assuming that the transport base 1b stops at the next stop position, the release of the adsorption of the electrostatic chuck 100 and the adsorption operation are repeatedly performed as described above.

In the embodiment shown in FIG. 3, transmission of power and signals between the carrier 1b and the voltage supply device 3b is performed by the action of electrostatic induction as described above. It is assumed that the outputs of the AC power supply 301 and the pulse power supply 305 described above are appropriately adjusted to values different from those in the embodiment of FIG. 1 according to the circuit constants of FIG.

Next, another embodiment of the present invention will be described with reference to FIGS. 4 (a) and 4 (b).
Will be explained. FIG. 4 (a) is a schematic view of the carrier table 1c and the carrier path 2c according to the embodiment of the present invention as viewed from above,
FIG. 4 (b) is a side view of FIG. 4 (a). In FIG. 4 (a), the carrier 1c moves in the left-right direction on the carrier path 2c toward this figure. The carrier 1c is composed of substantially the same components as the carrier 1 shown in FIG. However,
Unlike the corresponding core 203 shown in, the core 203 shown in this figure
The c is formed on the bottom of the carrier 1c so that its longitudinal direction is perpendicular to the moving direction of the carrier 1c. In this embodiment, the same components corresponding to those in FIG. 1 are not shown.

In FIGS. 4A and 4B, the voltage supply device 3c is
Although it has substantially the same components as the voltage supply device 3 shown in FIG. 1, the arrangement of the core 304c is different from that of the corresponding core 304 shown in FIG. 1 as shown in FIG. 4 (a). . That is, the core 304c is not provided at each stop position of the carrier 1c, but only one core 304c is provided over the entire carrier path 2c.
It is provided as shown in (a). Therefore, core 304
Since c and the core 202c are opposed to each other in the entire movement range of the carrier 1c as shown in FIG. 4 (b), the magnetic circuit passing through the cores 304c and 203c does not move or stop the carrier 1c. It is always formed regardless of the state. In this embodiment, a pair of AC power supply 301c, switch 302c and winding 303c are provided as shown in FIG. 4 (a), like the core 304c. However, the pulse power supply 307, the winding wire 306, and the core 305 shown in FIG. 1 are also provided in the respective stop positions of the carrier 1c in the present embodiment as well as in FIG. 1 (not shown).

In the above structure, if the carrier 1c moves while holding the wafer 4 (see FIG. 1) by suction and stops at a predetermined stop position, it is controlled by a control circuit (not shown). The switch 302c that has been continuously turned on is turned off. After that, the pulse generation circuit 307 and the thyristor 2 are processed in the same manner as the embodiment of FIG.
09 and the like (see FIG. 1) operate to release the suction fixing of the wafer 4. Here, it is assumed that the wafer 4 is transferred from the carrier 1c to a predetermined semiconductor manufacturing apparatus by a robot or the like, subjected to predetermined processing, and then returned to the carrier 1c again.

At this time, the switch 302c is turned on, the AC voltage output from the AC power source 301c is applied to the winding 303c, and an AC voltage is generated in the winding 202c by the induced electromotive force. The AC voltage generated in this winding 202c is the rectifier circuit 204
Is converted into a DC voltage and applied to each terminal of the capacitor 201 (see FIG. 1) to charge the capacitor 201. Then, when the terminal voltage of the capacitor 201 rises, a potential difference is generated between the wafer 4 and the electrode 102 (see FIG. 1), so that the wafer 4 is again adsorbed and held on the dielectric 101 (see FIG. 1).

Next, with the switch 302c still turned on, the carrier table 1c moves from the current stop position to the next stop position along the carrier path 2c. Therefore, until the carriage 1c stops at the next stop position, the voltage supply device 3c
From the above, electric power is continuously supplied to the capacitor 201, the electrode 102 and the wafer 4. Then, when the carrier 1c stops at the next stop position, the suction release and the suction operation of the electrostatic chuck 100 (see FIG. 1) are repeated as described above.

According to this embodiment, since electric power is continuously supplied from the voltage supply device 3c to the capacitor 201 during the movement of the carrier 1c, the electrostatic attraction force is reduced due to the spontaneous discharge of the moving capacitor 201. Can be prevented, and the capacity of the capacitor 201 can be reduced as compared with the embodiment shown in FIGS. In the embodiment shown in FIG. 4, the core 304c is laid over the entire conveying path 2c, but for example, a plurality of cores 304c, 304c, ... And windings 303c, 303c ,.
It is also possible to separately provide the transport path 2c at a required position.
In this case, it is necessary to provide a plurality of cores 304c, windings 303c, etc., but even when the conveyance path 2c has a meandering shape or over a long distance, as in the embodiment shown in FIG.
It is possible to prevent the electrostatic attraction force from decreasing due to the natural discharge of.

It is necessary to supply electric power from the power supply device to the carrier table by using passive elements such as windings, that is, inductance elements and electrodes, that is, capacitance elements, as in the above-mentioned embodiment. As a signal for controlling the discharge of 201, for example, an optical circuit, a radio signal, an ultrasonic signal, or the like can be used by providing another active circuit that uses the power received by those passive elements. Is.

[0042]

As described above, according to the first aspect of the invention, electric power is supplied from the power supply means to the carrier through the contactless power supply means and the contactless power reception means without using any contact. To be done. Then, this electric power causes the electrostatic adsorption means to
A semiconductor wafer or the like is held by electrostatic attraction and moved on the transfer path. Therefore, it is possible to eliminate the contacts that generate fine particles and the like from the carrier and the power supply means, and it is possible to provide a carrier device suitable for use in a clean room or the like in a semiconductor device manufacturing factory.

According to the second aspect of the invention, the control means controls the attraction state of the electrostatic attraction means in accordance with the control signal transmitted from the non-contact transmission means to the non-contact reception means. It is possible to obtain the effect that the holding state of a wafer or the like can be controlled without using contacts.

Further, according to the third aspect of the present invention, it is possible to supply electric power to the storage means through the non-contact power feeding means and the non-contact power receiving means without using a contact at the stop position of the carrier. Further, it is possible to obtain the effect that it is not necessary to continuously supply electric power to the moving carriage.

According to the invention of claim 4, the changing means supplies the electric power from the power storage means to the electrostatic attraction means in response to the control signal transmitted from the non-contact transmission means to the non-contact reception means. Since the state is changed, it is possible to obtain the effect that the holding state of the semiconductor wafer or the like can be controlled without using a contact.

According to the fifth aspect of the present invention, electric power is continuously or intermittently supplied to the power storage means of the moving carrier via the non-contact power feeding means and the non-contact power receiving means. As a result, it is possible to prevent the electrostatic attraction force from decreasing due to the natural discharge of the power storage unit, and it is possible to obtain the effect that the capacity of the power storage unit can be reduced.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a carrier table for carrying a wafer and a carrier path having a voltage supply device at a stop position thereof according to an embodiment of the present invention.

FIG. 2 is a schematic view similar to FIG. 1 according to another embodiment of the present invention.

FIG. 3 is a schematic view similar to FIG. 1 according to another embodiment of the present invention.

FIG. 4A is a schematic view of a carrier and a carrier path according to another embodiment of the present invention as seen from above, and FIG.
[Fig. 3] is a schematic view showing a side surface.

5 is a circuit diagram showing an internal circuit of the rectifier circuit 204 shown in FIGS. 1 to 4. FIG.

[Explanation of symbols]

1, 1a, 1b, 1c ... Carriers 2, 2a, 2b, 2c ... Carrier paths 3, 3a, 3b, 3c ... Voltage supply device 100 ... Electrostatic chuck 101 ... Dielectric 102 ... Electrode 103 ... Pin 201 ... Capacitor 200 ... Drive circuits 202b-1, 202b-2, 210b-1, 210b-2, 303b-1, 303b-2, 30
6b-1, 306b-2 ... Electrodes 202, 202c, 210, 303, 306 ... Windings 203, 203c, 211, 304, 304c, 305 ... Core 204 ... Rectifier circuit 205 ... Diode 206 ... Capacitor 209 ... Thyristor 209a ... Relay , 301, 307a-1 ... AC power supply 307 ... Pulse generator

Claims (5)

[Claims] 1. A carrier table provided with a carrier path, an electrostatic adsorption means moving along the carrier path, and a non-contact power receiving means for receiving electric power in a non-contact manner, and a non-contact electric power source in the non-contact power receiving means. And a power supply unit having a non-contact power supply unit for supplying the power supply unit. 2. A control unit for controlling an adsorption state of the electrostatic adsorption unit provided in the carrier, and a control signal input to the controller provided in the carrier without contact. 3. The semiconductor manufacturing apparatus according to claim 2, further comprising: non-contact receiving means for performing non-contact transmission, and non-contact transmitting means for non-contact transmitting a control signal to the non-contact receiving means provided outside the carrier. Device in. 3. A transportation path, a transportation platform provided with an electricity storage means and an electrostatic adsorption means that moves along the transportation channel, and a plurality of electric powers provided at predetermined stop positions of the transportation platform on the transportation path. A transfer device in a semiconductor manufacturing apparatus comprising: a supply means; a contactless power receiving means provided in the transfer table for receiving electric power in a non-contact manner; and a power receiving means provided in the power supply means. A non-contact power feeding means for supplying electric power by contact, and a carrier device in a semiconductor manufacturing apparatus, comprising: 4. A changing means for changing a supply state of electric power from the power storage means provided in the carrier to the electrostatic attraction means, and a control for controlling the changing means provided in the carrier. A contactless receiving means for receiving a signal in a contactless manner; and a contactless transmitting means for transmitting a control signal in a contactless manner to the contactless receiving means provided in the power supply means. A carrier device in the semiconductor manufacturing apparatus according to claim 3. 5. A transfer path, a transfer table provided with a power storage means that moves along the transfer path, an electrostatic adsorption means, and a non-contact power receiving means that receives electric power in a non-contact manner, and a transfer table of the moving transfer table. And a non-contact power supply means capable of supplying electric power to the non-contact power receiving means in a non-contact manner.