JPH0851227A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
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- JPH0851227A JPH0851227A JP6184351A JP18435194A JPH0851227A JP H0851227 A JPH0851227 A JP H0851227A JP 6184351 A JP6184351 A JP 6184351A JP 18435194 A JP18435194 A JP 18435194A JP H0851227 A JPH0851227 A JP H0851227A
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- hydrogen
- photovoltaic device
- layer
- power generation
- generation layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光起電力装置に係り、
特に光劣化後における変換効率を高められるようにした
光起電力装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photovoltaic device,
In particular, the present invention relates to a photovoltaic device capable of increasing conversion efficiency after photodegradation.
【０００２】[0002]
【従来の技術】未結合手を水素もしくはハロゲン族元素
により終端した非晶質Ｓｉアロイ（以下、ａ−Ｓｉアロ
イという。）を発電層に用いた光起電力装置は、シリコ
ン（Ｓｉ）原子と炭素（Ｃ）、窒素（Ｎ）、酸素
（Ｏ）、ゲルマニウム（Ｇｅ）、あるいは錫（Ｓｎ）原
子とのアロイ化により光学ギャップを広い範囲で制御で
きることから、太陽光スペクトルの有効利用を目的とし
た積層型光起電力装置として有望視されている。2. Description of the Related Art A photovoltaic device using an amorphous Si alloy (hereinafter referred to as a-Si alloy) in which dangling bonds are terminated by hydrogen or a halogen group element is used as a power generation layer. Since the optical gap can be controlled in a wide range by alloying with carbon (C), nitrogen (N), oxygen (O), germanium (Ge), or tin (Sn) atom, the purpose is to effectively utilize the solar spectrum. It is considered as a promising stacked photovoltaic device.
【０００３】発電層を構成する合金型アモルファス半導
体の製膜方法としてはプラズマ分解法が多用され、装置
的には平行平板電極の容量結合型反応装置が用いられる
ことが多い。膜生成用ガスはＳｉと合金を構成する成分
に対応して選択され、例えば合金型アモルファス半導体
の中で代表的地位を占めるアモルファスシリコン（以
下、ａ−Ｓｉという。）とゲルマニウム（Ｇｅ）とをア
ロイ化したａ−ＳｉＧｅ：Ｈは、モノシラン（Ｓｉ
Ｈ4 ）とゲルマンガス（ＧｅＨ4 ）と水素（Ｈ2 ）とを
膜生成用ガスとして用いている。A plasma decomposition method is often used as a method for forming an alloy type amorphous semiconductor forming a power generation layer, and a capacitively coupled reaction apparatus of parallel plate electrodes is often used in terms of the apparatus. The film-forming gas is selected according to the components that form an alloy with Si, and for example, amorphous silicon (hereinafter referred to as a-Si) and germanium (Ge), which occupy a typical position among alloy-type amorphous semiconductors, are selected. Alloyed a-SiGe: H is monosilane (Si
H 4 ), germane gas (GeH 4 ) and hydrogen (H 2 ) are used as film forming gas.
【０００４】ａ−Ｓｉアロイは非晶質Ｓｉ（以下、ａ−
Ｓｉという。）に比べて電気的特性が劣ることから、発
電層内でＳｉ以外の構成原子組成比を変化させることに
より光学ギャップを変化させた、いわゆる、光学ギャッ
プグレーデッド構造を採用してそのキャリヤ収集特性を
改善し、光起電力装置の初期特性を高めることが試みら
れている。The a-Si alloy is amorphous Si (hereinafter referred to as a-Si alloy).
It is called Si. Since the electrical characteristics are inferior to those of (1), the optical gap is changed by changing the composition ratio of constituent atoms other than Si in the power generation layer. Have been attempted to improve the initial characteristics of photovoltaic devices.
【０００５】グレーディングとしては、膜厚が大きくな
るにしたがって単純にＳｉに対するＧｅの組成比（ＣGe
／ＣSi）が増大するもの、膜厚が大きくなるにしたがっ
て単純にＣGe／ＣSiが減少するもの、及び膜厚の途中ま
で膜厚が大きくなるにしたがってＣGe／ＣSiが増大し、
その後ＣGe／ＣSiが減少するものが知られている（App
l. Phys. Lett. 5 June 1989 p2330-2332参照）。As the grading, the composition ratio of Ge to Si (C Ge
/ C Si ) increases, C Ge / C Si simply decreases as the film thickness increases, and C Ge / C Si increases as the film thickness increases halfway through the film thickness.
It is known that C Ge / C Si decreases thereafter (App
l. Phys. Lett. 5 June 1989 p2330-2332).
【０００６】従来、発電層内でＳｉ以外の構成原子組成
比を変化させるためには、単純に原料ガスの流量比（Ｓ
ｉＨ4 ／ＧｅＨ4 比）を変化させ、その組成比を変化さ
せており、したがって、例えば図７に示すように、ａ−
ＳｉＧｅ：ＨのＳｉに対するＧｅ組成比（ＣGe／ＣSi）
が増大すれば、終端元素である水素のＳｉに対する組成
比（ＣH ／ＣSi）が減少するという関係になっている。Conventionally, in order to change the composition ratio of constituent atoms other than Si in the power generation layer, the flow rate ratio (S) of the source gas is simply changed.
iH 4 / GeH 4 ratio) and the composition ratio thereof is changed. Therefore, for example, as shown in FIG.
Ge composition ratio of SiGe: H to Si (C Ge / C Si ).
Is increased, the composition ratio (C H / C Si ) of hydrogen, which is the terminal element, to Si is decreased.
【０００７】[0007]
【発明が解決しようとする課題】ところで、ａ−Ｓｉで
発電層が構成されている光起電力装置において、ＳｉＨ
2 の高次の結合がある時には膜質が悪化し、変換効率が
低下するため、水素量ＣH を適宜制御することが推奨さ
れている。By the way, in a photovoltaic device having a power generation layer made of a-Si, SiH
When there is a higher-order bond of 2, the film quality deteriorates and the conversion efficiency decreases, so it is recommended to appropriately control the hydrogen content C H.
【０００８】そこで、ａ−Ｓｉアロイで発電層が構成さ
れている光起電力装置、例えば、ａ−ＳｉＧｅ：Ｈで発
電層が構成されている光起電力装置において、水素量Ｃ
H が変換効率に与える影響を求めたところ、ａ−Ｓｉで
発電層が構成されている光起電力装置と同様に水素量Ｃ
H がある量に達するまでは変換効率が水素量ＣH に比例
して増大するが、ある量を越えると急激に変換効率が低
下することを発見したのである。また、ＳｉＨ4 ／Ｇｅ
Ｈ4 比を変化させて発電層の成長に対応してＧｅ量を変
化させるとＣH ／ＣSiも変化するが、発電層の成長速度
（デポレート）と圧力とを制御することによって発電層
の全膜厚にわたって終端元素量、即ち、ＣH ／ＣSiを全
膜厚にわたって均一にすることができ、しかも、ＣGe／
ＣSiを任意に変化させることができることを発見したの
である。Therefore, in a photovoltaic device having a power generation layer made of a-Si alloy, for example, a photovoltaic device having a power generation layer made of a-SiGe: H, the amount of hydrogen C
When the effect of H on the conversion efficiency was determined, the hydrogen content C was the same as in the photovoltaic device in which the power generation layer was composed of a-Si.
It was discovered that the conversion efficiency increases in proportion to the amount C H of hydrogen until the amount of H reaches a certain amount, but the conversion efficiency sharply decreases when the amount of H exceeds a certain amount. In addition, SiH 4 / Ge
When the amount of Ge is changed in response to the growth of the power generation layer by changing the H 4 ratio, C H / C Si also changes, but by controlling the growth rate (deposit rate) and pressure of the power generation layer, The amount of terminating element, that is, C H / C Si can be made uniform over the entire film thickness, and C Ge /
It was discovered that C Si can be changed arbitrarily.
【０００９】本発明は、係る知見に基づいて完成された
ものであり、変換効率を高められるようにした光起電力
装置の提供を目的とするものである。The present invention has been completed based on such findings, and an object of the invention is to provide a photovoltaic device capable of enhancing conversion efficiency.
【００１０】[0010]
【課題を解決するための手段】本発明は、未結合手を水
素もしくはハロゲン族元素により終端したａ−Ｓｉアロ
イを発電層に用いた光起電力装置において、上記の目的
を達成するため、発電層の全膜厚にわたって終端元素の
シリコン元素に対する組成比が均一であり、シリコン以
外のアロイ構成原子の組成比を変化させた発電層を備え
ることを特徴とする。SUMMARY OF THE INVENTION The present invention provides a photovoltaic device using an a-Si alloy in which dangling bonds are terminated by hydrogen or a halogen group element in a power generation layer. The composition is characterized in that the composition ratio of the terminating element to the silicon element is uniform over the entire film thickness of the layer, and the power generation layer is provided in which the composition ratio of alloy constituent atoms other than silicon is changed.
【００１１】ここで、ａ−Ｓｉアロイとは、Ｓｉ原子と
他の原子、例えばＣ、Ｎ、Ｏ、Ｇｅ、Ｓｎのいずれかの
原子で構成された非晶質半導体材料を意味している。Here, the a-Si alloy means an amorphous semiconductor material composed of Si atoms and other atoms, for example, any of C, N, O, Ge and Sn atoms.
【００１２】[0012]
【作用】本発明によれば、発電層の全膜厚にわたって終
端元素のシリコン元素に対する組成比が均一であるた
め、未結合手やＳｉ−Ｈ2 の高次の結合が最小となる最
適の均一な膜質を形成することができ、光劣化による変
換効率の低下を減少させることができる。According to the present invention, the composition ratio of the terminating element to the silicon element is uniform over the entire thickness of the power generation layer, so that the dangling bonds and the higher order bonds of Si-H 2 are optimally uniform. It is possible to form a different film quality and reduce the decrease in conversion efficiency due to photodegradation.
【００１３】本発明において、終端元素のシリコン元素
に対する組成比をどの程度に設定するかは自由である
が、最高の初期特性が得られる初期の最適値よりも多く
することはＳｉ−Ｈ2 の高次の結合が増大し、初期特性
及び光劣化後の特性を低下させるので好ましくなく、ま
た、光劣化後に最高の特性が得られる光劣化後の最適値
よりも少なくすると未結合手が増大して初期特性及び光
劣化後の特性を低下させるので好ましくない。最も好ま
しいのは初期特性の最適値よりも少ない光劣化後の最適
値にすることである。In the present invention, the composition ratio of the terminating element to the silicon element can be freely set, but it is necessary to increase the composition ratio of Si--H 2 beyond the initial optimum value to obtain the best initial characteristics. It is not preferable because higher order bonding increases and the initial characteristics and the characteristics after photodeterioration are deteriorated. Also, if it is less than the optimum value after photodegradation that gives the best characteristics after photodegradation, dangling bonds increase. It deteriorates the initial characteristics and the characteristics after light deterioration, which is not preferable. Most preferably, the optimum value after the photodegradation is smaller than the optimum value of the initial characteristics.
【００１４】[0014]
【実施例】以下、本発明の実施例を図面に基づいて具体
的に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１５】本発明の一実施例に係る光起電力装置は図
１の断面模式図に示すように、ガラス基板に順次積層さ
れる透明電極１、ｐ型ａ−Ｓｉ層２、膜厚２００Åのａ
−Ｓｉ層３、膜厚１３００Åのａ−ＳｉＧｅ層４、膜厚
２００Åのａ−Ｓｉ層５、ｎ型ａ−Ｓｉ層６及び裏面電
極７を備え、上記ａ−Ｓｉ層３、ａ−ＳｉＧｅ層４、ａ
−Ｓｉ層５によりｉ層（発電層）が構成される。As shown in the schematic sectional view of FIG. 1, a photovoltaic device according to an embodiment of the present invention has a transparent electrode 1, a p-type a-Si layer 2 and a film thickness of 200 Å which are sequentially laminated on a glass substrate. a
-Si layer 3, a-SiGe layer 4 having a film thickness of 1300Å, a-Si layer 5 having a film thickness of 200Å, n-type a-Si layer 6 and back electrode 7, and the a-Si layer 3 and a-SiGe layer described above. 4, a
The i layer (power generation layer) is configured by the -Si layer 5.
【００１６】図２に示すように、このｉ層におけるＧｅ
のグラディエーションプロフィルは、成長量０から２０
０Åのａ−Ｓｉ層３内ではほぼ直線的に増大し、２００
〜１３００Åの間のａ−ＳｉＧｅ層４内ではほぼ一定値
（ここではＣGe／ＣSi＝２９％）とし、１３００〜１７
００Åの間のａ−Ｓｉ層５内ではほぼ直線的に減少する
等脚台形となっている。又、このｉ層における水素組成
比ＣH ／ＣSiは全膜厚にわたって一定値（ここでは０．
０９８％）にしてある。As shown in FIG. 2, Ge in this i-layer is
Gradation profile of 0 to 20
In the 0-Å a-Si layer 3, it increases almost linearly and becomes 200
In the a-SiGe layer 4 between 1300 and 1300Å, a substantially constant value (here, C Ge / C Si = 29%) is set, and 1300 to 17
In the a-Si layer 5 between 00Å, it is an isosceles trapezoid that decreases almost linearly. Further, the hydrogen composition ratio C H / C Si in this i layer is a constant value (0.
098%).
【００１７】なお、このａ−ＳｉＧｅの基本的な形成条
件は表１に示す通りであり、デポレートを制御する反応
圧力とＲＦパワーとを制御することにより、膜厚全体に
わたって終端元素量、即ち、ＣH ／ＣSiが一定値（０．
０９８％）に固定されるようにしている。The basic conditions for forming this a-SiGe are as shown in Table 1. By controlling the reaction pressure and RF power for controlling the deposition rate, the amount of the terminating element over the entire film thickness, that is, C H / C Si is a constant value (0.
(098%).
【００１８】[0018]
【表１】 [Table 1]
【００１９】この光起電力装置のａ−ＳｉＧｅ層４の
（αｈν）1/3 プロットにより求めたた光学ギャップを
１．３２ｅＶと一定にした場合、図３に示すように、水
素量ＣH と赤色フィルター下の初期の変換効率との関係
は、水素量ＣH が約９ａｔ％以下では水素量ＣH の増大
にほぼ比例して変換効率が増大するが、約９ａｔ％を越
えると変換効率が低下し、ＣH ＝約９ａｔ％で極大値と
なることが分かる。極大値よりも水素量ＣH が少ない領
域での変換効率の低下は、水素もしくはハロゲン族元素
により終端されていない未結合手が存在するためと思わ
れ、極大値よりも水素量ＣH が多い領域の変換効率の低
下は、ＳｉＨ2 の高次の結合が生じて膜質が低下したた
めと思われる。In the case where the optical gap determined by a-SiGe layer 4 (αhν) 1/3 plot of this photovoltaic device constant at 1.32 eV, as shown in FIG. 3, and the hydrogen content C H Regarding the relationship with the initial conversion efficiency under the red filter, when the hydrogen content C H is about 9 at% or less, the conversion efficiency increases almost in proportion to the increase of the hydrogen content C H , but when it exceeds about 9 at%, the conversion efficiency increases. It can be seen that the value decreases and reaches a maximum value at C H = about 9 at%. The decrease in conversion efficiency in the region where the hydrogen content C H is lower than the maximum value is considered to be due to the presence of dangling bonds that are not terminated by hydrogen or a halogen group element, and the hydrogen content C H is higher than the maximum value. The decrease in the conversion efficiency of the region is considered to be due to the high-order bonding of SiH 2 and the deterioration of the film quality.
【００２０】又、表２に示す条件に従ってこの光起電力
装置の光劣化後の水素量ＣH と赤色フィルター下の初期
変換効率との関係を求めたところ、図４に示すように、
上記の初期変換効率に比べれば水素量ＣH が少ない約７
ａｔ％で最高値が得られ、図３及び図４から光劣化前後
では最適の水素量ＣH が異なり、光劣化後の最適値は低
水素側にシフトすることが分かる。Further, the relationship between the amount of hydrogen C H after photodegradation and the initial conversion efficiency under the red filter of this photovoltaic device was determined according to the conditions shown in Table 2, and as shown in FIG.
Compared to the above initial conversion efficiency, the hydrogen content C H is less than about 7
The maximum value is obtained at at%, and it can be seen from FIGS. 3 and 4 that the optimum amount of hydrogen C H differs before and after the photodegradation, and the optimum value after the photodegradation shifts to the low hydrogen side.
【００２１】[0021]
【表２】 [Table 2]
【００２２】次に、この光起電力装置のａ−ＳｉＧｅ層
４の光学ギャップを変化させ、１．５０ｅＶ、１．４３
ｅＶ、１．３６ｅＶ場合に付いても同様の実験を行い、
各光学ギャップにおける劣化後の最適水素量を求めたと
ころ図５に示す結果が得られた。この図５の縦軸は水素
量ＣH を示すが、これを水素組成比ＣH ／ＣSiに置き換
えると図６に示すようになり、ＣH ／ＣSi＝０．０９８
（％）に各光学ギャップの光劣化後の最適組成が存在す
ることが分かる。Next, the optical gap of the a-SiGe layer 4 of this photovoltaic device was changed to 1.50 eV and 1.43.
The same experiment was performed for eV and 1.36 eV.
When the optimum amount of hydrogen after deterioration in each optical gap was determined, the results shown in FIG. 5 were obtained. The vertical axis of this FIG. 5 shows the amount of hydrogen C H , but when this is replaced with the hydrogen composition ratio C H / C Si , it becomes as shown in FIG. 6, and C H / C Si = 0.098
It can be seen that (%) has the optimum composition after the optical deterioration of each optical gap.
【００２３】以上の結果を踏まえて、Ｇｅ組成比を図１
に示すように変化させ、水素組成比ＣH ／ＣSiを一定値
（０．０９８％）にしてキャリヤの輸送特性も同時に向
上させた場合の光劣化前後の赤色フィルター下の上記一
実施例の太陽電池特性を調べたところ、表３に示す結果
が得られた。また、比較のために、図７に示す従来の光
学ギャップグレーデッド構造の光起電力装置の太陽電池
特性を調べたところ、表４に示す結果が得られた。Based on the above results, the Ge composition ratio is shown in FIG.
Of the above-mentioned embodiment under the red filter before and after photo-deterioration in the case where the hydrogen composition ratio C H / C Si is set to a constant value (0.098%) and the carrier transport characteristics are also improved at the same time. When the characteristics of the solar cell were examined, the results shown in Table 3 were obtained. For comparison, when the photovoltaic device characteristics of the conventional photovoltaic device having the optical gap graded structure shown in FIG. 7 were examined, the results shown in Table 4 were obtained.
【００２４】[0024]
【表３】 [Table 3]
【００２５】[0025]
【表４】 [Table 4]
【００２６】これら表３と表４から明らかなように、上
記一実施例によれば劣化率が４％と大きく改善されるの
に加え、劣化後の赤色フィルター下での変換効率（Ｅf
f）も３．４５％と非常に高い太陽電池特性を得ること
ができた。As can be seen from Tables 3 and 4, the deterioration rate is greatly improved to 4% according to the above-mentioned embodiment, and the conversion efficiency (Ef) under the red filter after deterioration is improved.
f) was also able to obtain a very high solar cell characteristic of 3.45%.
【００２７】なお、この実施例によれば、水素量ＣH を
光劣化後の最適値に設定しているので、おそらく、ｉ層
に注入されたキャリアが素早く電極に収集され再結合す
る確率が低くなり、ｉ層に注入されたキャリヤが再結合
する際に欠陥を誘起してｉ層の膜質を低下させることが
少なくなっているために光劣化が小さくなったものと思
われる。According to this embodiment, since the amount of hydrogen C H is set to the optimum value after photodegradation, the probability that the carriers injected into the i layer are quickly collected in the electrode and recombined is likely. It is considered that the photo-deterioration is reduced because it is less likely that the carriers injected into the i-layer recombine to induce defects and deteriorate the film quality of the i-layer.
【００２８】上記の一実施例では、Ｇｅのグラディエー
ションプロフィルを等脚台形にしているが、このプロフ
ィルを不等脚台形にしたり、山形にしたりすることは自
由である。In the above-described embodiment, the Ge gradation profile has an isosceles trapezoidal shape, but this profile can be freely formed into an isosceles trapezoidal shape or a chevron shape.
【００２９】また、上記実施例の説明ではａ−ＳｉＧ
ｅ：Ｈに関してのみ述べたが、Ｓｉ原子とＣ原子とのア
ロイ、Ｓｉ原子とＮ原子とのアロイ、Ｓｉ原子とＯ原子
とのアロイ、Ｓｉ原子とＳｎ原子とのアロイについても
同様の結果が得られている。In the description of the above embodiment, a-SiG is used.
Although only e: H is described, similar results are obtained for alloys of Si atoms and C atoms, alloys of Si atoms and N atoms, alloys of Si atoms and O atoms, and alloys of Si atoms and Sn atoms. Has been obtained.
【００３０】[0030]
【発明の効果】以上に説明したように、本発明によれ
ば、終端元素量が全膜厚にわたって一定値に固定されて
いるので、水素もしくはハロゲン族元素により終端され
ていない未結合手やＳｉ−Ｈ2 の高次の結合が最小にな
る最適の均一な膜質を形成することができ、光劣化によ
る変換効率の低下を減少させることができるのである。As described above, according to the present invention, the amount of the terminating element is fixed to a constant value over the entire film thickness, so that dangling bonds or Si not terminated by hydrogen or a halogen group element or Si. It is possible to form an optimum uniform film quality in which the higher-order coupling of -H 2 is minimized and reduce the decrease in conversion efficiency due to photodegradation.
【００３１】本発明において、特に水素量ＣH を初期の
最適値よりも小さく光劣化後の最適値以上に設定する場
合には一層光劣化後の変換効率を高めることができ、実
用上一層好ましい設計ができるのである。In the present invention, in particular, when the hydrogen content C H is set to be smaller than the initial optimum value and equal to or higher than the optimum value after photodegradation, the conversion efficiency after photodegradation can be further enhanced, and it is more practically preferable. You can design.
【図１】本発明の実施例の断面模式図である。FIG. 1 is a schematic sectional view of an example of the present invention.
【図２】本発明の実施例の発電層の組成分布図である。FIG. 2 is a composition distribution diagram of a power generation layer according to an example of the present invention.
【図３】本発明の実施例の初期の水素量と変換効率との
関係を示す特性図である。FIG. 3 is a characteristic diagram showing a relationship between an initial amount of hydrogen and conversion efficiency in an example of the present invention.
【図４】本発明の実施例の光劣化後の水素量と変換効率
との関係を示す特性図である。FIG. 4 is a characteristic diagram showing the relationship between the amount of hydrogen after photodegradation and the conversion efficiency in the example of the present invention.
【図５】本発明の実施例の光学ギャップと劣化後最適水
素量との関係を示す特性図である。FIG. 5 is a characteristic diagram showing the relationship between the optical gap and the optimum hydrogen amount after deterioration in the example of the present invention.
【図６】本発明の実施例の光学ギャップと劣化後最適組
成比との関係を示す特性図である。FIG. 6 is a characteristic diagram showing the relationship between the optical gap and the optimum composition ratio after deterioration in the example of the present invention.
【図７】従来例の発電層の組成分布図である。FIG. 7 is a composition distribution diagram of a conventional power generation layer.
３ ａ−Ｓｉ層 ４ ａ−ＳｉＧｅ層 ５ ａ−Ｓｉ層 ＣH ／ＣSi 水素組成比 ＣGe／ＣSi Ｇｅの組成比3 a-Si layer 4 a-SiGe layer 5 a-Si layer C H / C Si hydrogen composition ratio C Ge / C Si Ge composition ratio
Claims (1)
により終端した非晶質シリコンアロイを発電層に用いた
光起電力装置において、 発電層の全膜厚にわたって終端元素のシリコン元素に対
する組成比が均一であり、シリコン以外のアロイ構成原
子の組成比を変化させた発電層を備えることを特徴とす
る光起電力装置。1. A photovoltaic device using an amorphous silicon alloy in which dangling bonds are terminated by hydrogen or a halogen group element in a power generation layer, wherein the composition ratio of the termination element to the silicon element is over the entire thickness of the power generation layer. A photovoltaic device comprising a power generation layer which is uniform and has a different composition ratio of alloy constituent atoms other than silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18435194A JP3229753B2 (en) | 1994-08-05 | 1994-08-05 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18435194A JP3229753B2 (en) | 1994-08-05 | 1994-08-05 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0851227A true JPH0851227A (en) | 1996-02-20 |
| JP3229753B2 JP3229753B2 (en) | 2001-11-19 |
Family
ID=16151743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18435194A Expired - Fee Related JP3229753B2 (en) | 1994-08-05 | 1994-08-05 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3229753B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7667133B2 (en) | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
| US7750234B2 (en) | 2002-11-27 | 2010-07-06 | The University Of Toledo | Integrated photoelectrochemical cell and system having a liquid electrolyte |
-
1994
- 1994-08-05 JP JP18435194A patent/JP3229753B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7750234B2 (en) | 2002-11-27 | 2010-07-06 | The University Of Toledo | Integrated photoelectrochemical cell and system having a liquid electrolyte |
| US7667133B2 (en) | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
| US7879644B2 (en) | 2003-10-29 | 2011-02-01 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
| US8030120B2 (en) | 2003-10-29 | 2011-10-04 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3229753B2 (en) | 2001-11-19 |
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