JPH0855722A - Corrosion resistant high saturation magnetic flux density magnetic film and magnetic head using the same - Google Patents
Corrosion resistant high saturation magnetic flux density magnetic film and magnetic head using the sameInfo
- Publication number
- JPH0855722A JPH0855722A JP6190694A JP19069494A JPH0855722A JP H0855722 A JPH0855722 A JP H0855722A JP 6190694 A JP6190694 A JP 6190694A JP 19069494 A JP19069494 A JP 19069494A JP H0855722 A JPH0855722 A JP H0855722A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- group
- magnetic film
- element selected
- flux density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/131—Amorphous metallic alloys, e.g. glassy metals containing iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、高飽和磁束密度、高透
磁率、低磁歪定数を有し、しかも耐食性、耐摩耗性に優
れた磁性膜に関し、特に磁気ディスク装置やVTR用の
ヘッドコア材料に好適な磁性膜に関する。さらに、この
磁性膜を使用した信頼性の高い磁気ヘッドならびに磁気
記録装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic film having a high saturation magnetic flux density, a high magnetic permeability, a low magnetostriction constant, and excellent corrosion resistance and wear resistance, and particularly to a head core material for a magnetic disk device or a VTR. And a magnetic film suitable for. Further, the present invention relates to a highly reliable magnetic head and magnetic recording device using this magnetic film.
【0002】[0002]
【従来の技術】近年、高密度磁気記録の進歩は著しく、
記録密度の増加により装置の小型化、高性能化が進んで
いる。さらに記録の高密度化を進めるためには高保磁力
の媒体を用い、これに充分記録可能な磁界を発生させる
ために磁気ヘッドのコア材料に高い飽和磁束密度を有す
る磁性材料を使用する必要がある。このような磁性材料
として、Co系非晶質合金、FeAlSi系(センダス
ト)合金等が用いられてきた。さらには、特開平3−2
0444号公報に記載された、Fe(Ti,Zr,H
f,Nb,Ta,Mo,W)Cの組成式で示されるよう
な炭素を比較的大量に含む磁性合金、あるいは特開平3
−275605号公報に記載された、Fe(Zr,H
f,Ti,Nb,Ta,V,Mo,W)Nの組成式で示
されるような窒素を比較的多量に含む磁性合金が提案さ
れている。2. Description of the Related Art In recent years, the progress of high-density magnetic recording is remarkable,
Due to the increase in recording density, devices are becoming smaller and higher in performance. In order to further increase the recording density, it is necessary to use a medium having a high coercive force, and to generate a sufficiently recordable magnetic field, use a magnetic material having a high saturation magnetic flux density as the core material of the magnetic head. . As such magnetic materials, Co-based amorphous alloys, FeAlSi-based (sendust) alloys, etc. have been used. Furthermore, JP-A-3-2
Fe (Ti, Zr, H
f, Nb, Ta, Mo, W) C, a magnetic alloy containing a relatively large amount of carbon as represented by the composition formula of
No. 275605, Fe (Zr, H
f, Ti, Nb, Ta, V, Mo, W) N magnetic alloys containing a relatively large amount of nitrogen as represented by the composition formula have been proposed.
【0003】[0003]
【発明が解決しようとする課題】Co系非晶質合金及び
FeAlSi系合金磁性膜は飽和磁束密度が1.1〜
1.3Tであるのに対して、上記炭素系あるいは窒素系
合金磁性膜は1.5〜1.6Tと高い飽和磁束密度を有
する。しかし、耐食性を評価した結果、上記炭素系及び
窒素系合金磁性膜は耐食性に問題があり、磁気ヘッド作
製プロセス中に腐食を生じたり、磁気ヘッド表面に結露
を生じた場合あるいは塩素イオンが存在する環境下にお
いて腐食を生じやすい場合があることが明らかになっ
た。Co-based amorphous alloys and FeAlSi-based alloy magnetic films have saturation magnetic flux densities of 1.1-
In contrast to 1.3T, the carbon-based or nitrogen-based alloy magnetic film has a high saturation magnetic flux density of 1.5 to 1.6T. However, as a result of evaluating the corrosion resistance, the above-mentioned carbon-based and nitrogen-based alloy magnetic films have a problem with the corrosion resistance, and corrosion occurs during the magnetic head manufacturing process, or dew condensation occurs on the magnetic head surface, or chlorine ions are present. It became clear that corrosion may occur easily in the environment.
【0004】これらの磁性膜をVTRヘッドに適用する
場合、記録特性を向上するための高飽和磁束密度のほか
に、優れた再生特性を実現するために、高透磁率、低保
磁力、軟磁気特性が要求される。さらに、ヘッド基板上
にスパッタリング法などの薄膜作製法により形成した場
合の内部応力や、磁気ヘッド加工中に受ける加工応力、
熱応力によって磁気特性が劣化しないように、磁歪定数
の絶対値が小さいことが必要である。さらに磁気ヘッド
は磁気テープで摺動するために耐摩耗性も必要である。When these magnetic films are applied to a VTR head, in addition to a high saturation magnetic flux density for improving recording characteristics, a high magnetic permeability, a low coercive force, and a soft magnetic field are realized in order to realize excellent reproducing characteristics. Characteristics are required. Furthermore, internal stress when formed by a thin film manufacturing method such as a sputtering method on the head substrate, processing stress received during processing of the magnetic head,
It is necessary that the absolute value of the magnetostriction constant is small so that the magnetic characteristics do not deteriorate due to thermal stress. Further, since the magnetic head slides on the magnetic tape, wear resistance is also required.
【0005】本発明の目的は、上記のように高飽和磁束
密度、高透磁率、低保磁力、低磁歪定数で耐食性、耐摩
耗性に優れた磁性膜及びこれを用いた磁気ヘッドを提供
することにある。An object of the present invention is to provide a magnetic film having high saturation magnetic flux density, high magnetic permeability, low coercive force, low magnetostriction constant and excellent corrosion resistance and wear resistance as described above, and a magnetic head using the same. Especially.
【0006】[0006]
【課題を解決するための手段】本発明者等は、上記炭素
系及び窒素系合金磁性膜の耐食性を向上するために鋭意
検討した結果、Crを添加することによりこれらの合金
の耐食性を向上させ得ることを見出した。しかし、Cr
を多量に添加した場合には、飽和磁束密度が低下してし
まうという問題が生じた。この問題を解決するために、
さらに耐食性を向上する添加元素について検討した結
果、Ru,Rhなどの白金族元素の添加が、耐食性向上
に大きい効果があることを見出した。このように、R
u,Rh等の白金属元素の添加は、上記の炭素系及び窒
素系合金の耐食性を大きく向上させる。しかし、これら
の白金族元素を添加した場合、またCrを添加した場合
にも、磁歪定数が著しく増加するという問題を生じた。
この問題を解決するために、本発明者等は、磁歪定数を
低減できる元素について鋭意検討した結果、Feを主成
分とし、Ti,Zr,Hf,Ta,Nb等の遷移金属元
素と炭素、窒素及び白金族元素を含む合金膜にSiを添
加することにより、磁歪定数の低減が図れることを見出
した。Means for Solving the Problems As a result of intensive investigations by the present inventors for improving the corrosion resistance of the above-mentioned carbon-based and nitrogen-based alloy magnetic films, the addition of Cr improves the corrosion resistance of these alloys. Found to get. However, Cr
When a large amount of is added, there arises a problem that the saturation magnetic flux density is reduced. to solve this problem,
Further, as a result of studying additional elements that improve the corrosion resistance, it was found that the addition of platinum group elements such as Ru and Rh has a great effect on the improvement of the corrosion resistance. Thus, R
Addition of white metal elements such as u and Rh greatly improves the corrosion resistance of the above carbon-based and nitrogen-based alloys. However, when these platinum group elements are added or when Cr is added, the problem that the magnetostriction constant increases remarkably occurs.
In order to solve this problem, the inventors of the present invention have conducted extensive studies on an element capable of reducing the magnetostriction constant, and as a result, have Fe as a main component and transition metal elements such as Ti, Zr, Hf, Ta, and Nb, and carbon and nitrogen. It was found that the magnetostriction constant can be reduced by adding Si to the alloy film containing the platinum group element.
【0007】本発明では、上記のように飽和磁束密度が
高く、高透磁率、低保磁力の特性を有し、耐食性、耐摩
耗性に優れた磁性膜及びこれを用いた磁気ヘッドを得る
ために、以下の(1)〜(4)に示す組成の磁性膜を使
用する。According to the present invention, as described above, a magnetic film having a high saturation magnetic flux density, high magnetic permeability and low coercive force, excellent corrosion resistance and wear resistance, and a magnetic head using the same are provided. In addition, a magnetic film having the composition shown in the following (1) to (4) is used.
【0008】(1)組成式:FeaSicTdXeZg で表
される組成を有する磁性膜。但し、TはTi,Zr,H
f,Nb,Ta,Mo,Wの群から選ばれる元素の少な
くとも一種、XはRu,Rh,Os,Ir,Pd,Pt
の群から選ばれる元素の少なくとも一種、ZはC,Nの
群から選ばれる元素の少なくとも一種であって、a,
c,d,e,gは原子%を表し、5≦c≦20,2≦d
≦20,0.5≦e≦15,1≦g≦20、かつ、a+
c+d+e+g=100、である。[0008] (1) the composition formula: Fe a Si c T d X e Z g magnetic film having a composition represented by. However, T is Ti, Zr, H
At least one element selected from the group consisting of f, Nb, Ta, Mo and W, and X is Ru, Rh, Os, Ir, Pd, Pt.
At least one element selected from the group C, N is at least one element selected from the group C and N,
c, d, e and g represent atomic% and 5 ≦ c ≦ 20 and 2 ≦ d
≦ 20, 0.5 ≦ e ≦ 15, 1 ≦ g ≦ 20, and a +
c + d + e + g = 100.
【0009】(2)組成式:FeaSicTdXeYfZg
で表される組成を有する磁性膜。但し、TはTi,Z
r,Hf,Nb,Ta,Mo,Wの群から選ばれる元素
の少なくとも一種、XはRu,Rh,Os,Ir,P
d,Ptの群から選ばれる元素の少なくとも一種、Yは
Cr,Alから選ばれる元素の少なくとも一種、Zは
C,Nの群から選ばれる元素の少なくとも一種であっ
て、a,c,d,e,f,gは原子%を表し、5≦c≦
20,2≦d≦20,0.5≦e≦15,f≦15,1
≦g≦20、かつ、a+c+d+e+f+g=100、
である。[0009] (2) the composition formula: Fe a Si c T d X e Y f Z g
A magnetic film having a composition represented by: However, T is Ti, Z
At least one element selected from the group consisting of r, Hf, Nb, Ta, Mo and W, X is Ru, Rh, Os, Ir, P
at least one element selected from the group of d and Pt, Y at least one element selected from Cr and Al, and Z at least one element selected from the group C and N, wherein a, c, d, e, f and g represent atomic% and 5 ≦ c ≦
20, 2 ≤ d ≤ 20, 0.5 ≤ e ≤ 15, f ≤ 15, 1
≦ g ≦ 20, and a + c + d + e + f + g = 100,
Is.
【0010】(3)組成式:FeaMbSicTdXeZg
で表される組成を有する磁性膜。但し、MはCo,Ni
の群から選ばれる元素の少なくとも一種、TはTi,Z
r,Hf,Nb,Ta,Mo,Wの群から選ばれる元素
の少なくとも一種、XはRu,Rh,Os,Ir,P
d,Ptの群から選ばれる元素の少なくとも一種、Zは
C,Nの群から選ばれる元素の少なくとも一種であっ
て、a,b,c,d,e,gは原子%を表し、b≦1
5,5≦c≦20,2≦d≦20,0.5≦e≦15,
1≦g≦20、かつ、a+b+c+d+e+g=10
0、である。[0010] (3) the composition formula: Fe a M b Si c T d X e Z g
A magnetic film having a composition represented by: However, M is Co, Ni
At least one of the elements selected from the group, T is Ti, Z
At least one element selected from the group consisting of r, Hf, Nb, Ta, Mo and W, X is Ru, Rh, Os, Ir, P
At least one element selected from the group of d and Pt, Z is at least one element selected from the group of C and N, and a, b, c, d, e and g represent atomic%, and b ≦ 1
5, 5 ≤ c ≤ 20, 2 ≤ d ≤ 20, 0.5 ≤ e ≤ 15,
1 ≦ g ≦ 20 and a + b + c + d + e + g = 10
0.
【0011】(4)組成式:FeaMbSicTdXeYfZ
g で表される組成を有する磁性膜。但し、MはCo,N
iの群から選ばれる元素の少なくとも一種、TはTi,
Zr,Hf,Nb,Ta,Mo,Wの群から選ばれる元
素の少なくとも一種、XはRu,Rh,Os,Ir,P
d,Ptの群から選ばれる元素の少なくとも一種、Yは
Cr,Alの群から選ばれる元素の少なくとも一種、Z
はC,Nの群から選ばれる元素の少なくとも一種であっ
て、a,b,c,d,e,gは原子%を表し、b≦1
5,5≦c≦20,2≦d≦20,0.5≦e≦15,
f≦15,1≦g≦20、かつ、a+b+c+d+e+
f+g=100、である。[0011] (4) the composition formula: Fe a M b Si c T d X e Y f Z
A magnetic film having a composition represented by g . However, M is Co, N
At least one element selected from the group of i, T is Ti,
At least one element selected from the group of Zr, Hf, Nb, Ta, Mo and W, X is Ru, Rh, Os, Ir and P
d, at least one element selected from the group of Pt, Y is at least one element selected from the group of Cr and Al, Z
Is at least one element selected from the group of C and N, a, b, c, d, e and g represent atomic%, and b ≦ 1
5, 5 ≤ c ≤ 20, 2 ≤ d ≤ 20, 0.5 ≤ e ≤ 15,
f ≦ 15, 1 ≦ g ≦ 20, and a + b + c + d + e +
f + g = 100.
【0012】上記(1)〜(4)の磁性膜において、X
はRu,Rh,Ir,Osの群から選ばれる元素の少な
くとも一種とするのが好ましい。また、上記いずれの磁
性膜においても、元素Xの濃度は、3≦e≦15の範囲
がより好ましく、3≦e≦10の範囲がさらに好まし
い。Siの濃度は、10≦c≦15の範囲がより好まし
い。元素Tの濃度は、2≦d≦10の範囲がより好まし
い。元素Zの濃度は、3≦g≦10の範囲がより好まし
い。元素Yの濃度は、f≦10とするのがより好まし
い。元素Mの濃度は、b≦10とするのがより好まし
い。元素Xに加えて元素Yを添加する場合には、その濃
度の和を15%以下とするのが好ましい。元素Xに加え
て元素Mを添加する場合には、その濃度の和を15%以
下とするのが好ましい。元素Xに加えて元素Y及び元素
Mを添加する場合には、その濃度の和を15%以下とす
るのが好ましい。In the above magnetic films (1) to (4), X
Is preferably at least one element selected from the group consisting of Ru, Rh, Ir and Os. Further, in any of the above magnetic films, the concentration of the element X is more preferably in the range of 3 ≦ e ≦ 15, further preferably in the range of 3 ≦ e ≦ 10. The Si concentration is more preferably in the range of 10 ≦ c ≦ 15. The concentration of the element T is more preferably in the range of 2 ≦ d ≦ 10. The concentration of the element Z is more preferably in the range of 3 ≦ g ≦ 10. The concentration of the element Y is more preferably f ≦ 10. The concentration of the element M is more preferably b ≦ 10. When the element Y is added in addition to the element X, the sum of the concentrations is preferably 15% or less. When the element M is added in addition to the element X, the sum of the concentrations is preferably 15% or less. When the element Y and the element M are added in addition to the element X, the sum of the concentrations thereof is preferably 15% or less.
【0013】本発明の合金磁性膜は、スパッタリング
法、真空蒸着法等の薄膜形成技術により作製される。特
に、2極スパッタリング法、マグネトロンスパッタリン
グ法、イオンビームスパッタリング法等のスパッタリン
グ法により作製することが好ましい。磁性膜の成膜後、
400℃以上の温度で熱処理を行う。磁性膜中の平均結
晶粒径は50nm以下、より好ましくは20nm以下で
ある。The alloy magnetic film of the present invention is produced by a thin film forming technique such as a sputtering method or a vacuum evaporation method. In particular, it is preferably manufactured by a sputtering method such as a bipolar sputtering method, a magnetron sputtering method or an ion beam sputtering method. After forming the magnetic film,
Heat treatment is performed at a temperature of 400 ° C. or higher. The average crystal grain size in the magnetic film is 50 nm or less, more preferably 20 nm or less.
【0014】磁気ヘッドは、上記磁性膜を磁気コアのキ
ャップ近傍の少なくとも一部に用いて形成される。この
磁気ヘッドは、磁気ディスク用の薄膜磁気ヘッドとして
用いることができる。また、磁気ディスク用、VTR用
に用いられる、フェライトヘッドのギャップ面に高飽和
磁束密度磁性膜を形成したMIGヘッドに用いることが
できる。また、フェライトヘッドのギャップ近傍に高飽
和磁束密度磁性膜を形成し、フェライトと磁性膜の界面
がギャップ面と非平行になるように構成したVTR用複
合ヘッド用として用いることができる。また、VTR用
に非磁性基板上に磁性膜を積層形成して磁路とした磁気
ヘッドとして用いることができる。上記磁性膜は1μm
以上の厚膜で好ましい磁気特性を示すので、厚い磁性膜
が必要なVTRヘッド用として好適である。The magnetic head is formed by using the above-mentioned magnetic film in at least a part of the magnetic core near the cap. This magnetic head can be used as a thin film magnetic head for a magnetic disk. Further, it can be used for a MIG head used for a magnetic disk and a VTR, in which a high saturation magnetic flux density magnetic film is formed on a gap surface of a ferrite head. Further, it can be used for a VTR composite head in which a high saturation magnetic flux density magnetic film is formed near the gap of the ferrite head so that the interface between the ferrite and the magnetic film is not parallel to the gap surface. Further, it can be used as a magnetic head for a VTR by forming a magnetic film on a non-magnetic substrate to form a magnetic path. The magnetic film is 1 μm
Since the above thick film exhibits preferable magnetic characteristics, it is suitable for a VTR head that requires a thick magnetic film.
【0015】磁気記録装置では、上記磁気ヘッドを少な
くとも1個以上使用することにより、特に腐食が問題と
なる環境、例えば高湿度を経験する環境や、塩素イオン
等の腐食性物質が存在する環境において、装置動作の信
頼性を大幅に高めることができる。In the magnetic recording apparatus, by using at least one of the above magnetic heads, in an environment where corrosion is particularly problematic, for example, an environment where high humidity is experienced or an environment where corrosive substances such as chlorine ions are present. Therefore, the reliability of the device operation can be significantly increased.
【0016】[0016]
【作用】Ti,Zr,Hf,Nb,Ta,Mo,Wから
なる遷移金属Tは磁性膜形成後の熱処理によりC又はN
と結合し、おもにFeの結晶粒界に析出して結晶成長を
抑える。この結果、磁性膜は少なくとも50nm以下、
通常は約20nm以下の微細な結晶粒から構成される構
造となり、高透磁率、低保磁力の軟磁気特性の優れた磁
性膜となり、また高い耐熱性を示すようになる。この効
果を得るために遷移金属Tの総濃度は2%(原子%、以
下同じ)以上とする必要がある。一方、Tの総濃度を高
くした場合には、飽和磁束密度が減少する。また、Tの
総濃度が高く、C又はNと結合しないT成分が増加した
場合には、軟磁気特性の劣化及び耐食性の劣化が見られ
る。従って、Tの総濃度を20%以下、より好ましくは
10%以下とする必要がある。The transition metal T composed of Ti, Zr, Hf, Nb, Ta, Mo and W is C or N by heat treatment after forming the magnetic film.
Binds with and mainly precipitates at Fe crystal grain boundaries to suppress crystal growth. As a result, the magnetic film is at least 50 nm or less,
Usually, it has a structure composed of fine crystal grains of about 20 nm or less, and it becomes a magnetic film having a high magnetic permeability, a low coercive force, and an excellent soft magnetic property, and exhibits high heat resistance. In order to obtain this effect, the total concentration of the transition metal T needs to be 2% (atomic%, the same applies hereinafter) or more. On the other hand, when the total concentration of T is increased, the saturation magnetic flux density decreases. Further, when the total concentration of T is high and the amount of T component that does not bind to C or N is increased, deterioration of soft magnetic characteristics and deterioration of corrosion resistance are observed. Therefore, the total concentration of T needs to be 20% or less, and more preferably 10% or less.
【0017】C又はNからなる元素群Zは、上記のよう
に遷移金属Tと結合して、結晶粒の微細化に寄与する。
この効果を得るためには、合わせて1%以上、好ましく
は3%以上の濃度が必要である。また濃度を高くしすぎ
た場合には、飽和磁束密度が減少する他、膜形成時の内
部応力が大きくなり磁性膜の剥離、基板クラックの発生
等が生ずるため、濃度を20%以下、より好ましくは1
0%以下にする必要がある。The element group Z composed of C or N is combined with the transition metal T as described above and contributes to the refinement of crystal grains.
To obtain this effect, a total concentration of 1% or more, preferably 3% or more is required. If the concentration is made too high, the saturation magnetic flux density will decrease, and the internal stress at the time of film formation will increase, causing peeling of the magnetic film, substrate cracking, etc., so the concentration is preferably 20% or less, more preferably Is 1
It should be 0% or less.
【0018】Ru,Rh,Os,Ir,Pt,Pdから
なる元素群Xは、Feを主成分とする結晶粒の耐食性を
増加させる。しかも、添加により飽和磁束密度をあまり
低下させず、かえって飽和磁束密度を向上させる場合も
ある。耐食性向上の効果を得るために、Xの濃度は0.
5%以上にする必要があり、耐食性向上効果を大きくす
るためには3%以上とすることが好ましい。ただし、X
元素群を多くした場合には磁歪定数の増加が著しいた
め、添加量は15%以下、より好ましくは10%以下と
する必要がある。これらの元素の中で、Ru,Rh,I
r又はOsが耐食性向上に特に効果が著しい。The element group X consisting of Ru, Rh, Os, Ir, Pt and Pd increases the corrosion resistance of the crystal grains containing Fe as a main component. Moreover, the addition may not cause the saturation magnetic flux density to be lowered so much, and may rather increase the saturation magnetic flux density. In order to obtain the effect of improving the corrosion resistance, the concentration of X is 0.
It should be 5% or more, and preferably 3% or more in order to enhance the effect of improving the corrosion resistance. However, X
Since the magnetostriction constant increases remarkably when the number of elements is increased, the addition amount must be 15% or less, more preferably 10% or less. Among these elements, Ru, Rh, I
r or Os is particularly effective in improving the corrosion resistance.
【0019】X元素群に加えて、Y元素群としてAlあ
るいはCrをさらに添加することは、耐食性向上のため
に効果がある。しかしこれらの元素の添加は飽和磁束密
度を低下させ、また磁歪定数を増加させるため、添加量
を15%以下、好ましくは10%以下とする必要があ
る。また、X元素群に加えて、Y元素群を添加する場
合、これらの濃度の和が大きい場合には磁歪定数が増加
するため、X元素群とY元素群の和を15%以下とする
ことが好ましい。The addition of Al or Cr as the Y element group in addition to the X element group is effective for improving the corrosion resistance. However, addition of these elements lowers the saturation magnetic flux density and increases the magnetostriction constant, so the addition amount must be 15% or less, preferably 10% or less. Further, when the Y element group is added in addition to the X element group, the magnetostriction constant increases when the sum of these concentrations is large. Therefore, the sum of the X element group and the Y element group should be 15% or less. Is preferred.
【0020】Co,Niからなる元素群Mは飽和磁束密
度を増加させ、また耐食性も向上させる効果がある。し
かし、これらの元素も添加とともに磁歪定数を増加させ
るため、添加量を15%以下、好ましくは10%以下に
する必要がある。また、元素群Xに加えて元素群Mを添
加する場合、これらの濃度の和が大きい場合には磁歪定
数が増加するため、X元素群とM元素群の和を15%以
下とすることが好ましい。さらに、元素群Xに加えて元
素群Y及びMを添加する場合にも、これらの濃度の和が
大きい場合には磁歪定数が増加するため、X元素群、Y
元素群及びM元素群の総和を15%以下とすることが好
ましい。The element group M composed of Co and Ni has the effects of increasing the saturation magnetic flux density and also improving the corrosion resistance. However, since these elements also increase the magnetostriction constant as they are added, the addition amount must be 15% or less, preferably 10% or less. In addition, when the element group M is added in addition to the element group X, the magnetostriction constant increases when the sum of these concentrations is large. Therefore, the sum of the X element group and the M element group may be set to 15% or less. preferable. Further, when the element groups Y and M are added in addition to the element group X, the magnetostriction constant increases when the sum of these concentrations is large, so that the X element group, Y
The total sum of the element group and the M element group is preferably 15% or less.
【0021】Siは磁歪定数を低減する効果を有する
が、この効果は比較的多量の添加量からその効果を生ず
るため、少なくとも5%以上の添加量が必要であり、1
0%以上とすることが好ましい。ただし、添加量を多く
しすぎると、飽和磁束密度の低下が大きいため、添加量
は20%以下とする必要があり、15%以下とすること
がより好ましい。Si has the effect of reducing the magnetostriction constant, but since this effect is produced from a relatively large amount of addition, it is necessary to add at least 5% or more.
It is preferably 0% or more. However, if the addition amount is too large, the saturation magnetic flux density is largely reduced. Therefore, the addition amount needs to be 20% or less, and more preferably 15% or less.
【0022】磁性膜の作製後、400℃以上の温度で熱
処理を行うと、それぞれの元素がほぼ均一に分散された
膜構造から、Feを主成分とする少なくとも約50nm
以下、通常は約20nm以下の微細な結晶粒と、その周
囲に元素群TとNあるいは/及びCとの微細な化合物が
存在する構造に変化し、高透磁率、低保磁力の軟磁気特
性と低磁歪定数、高飽和磁束密度、高耐熱性の性質が発
現する。After the magnetic film is formed, a heat treatment is carried out at a temperature of 400 ° C. or higher, and at least about 50 nm containing Fe as a main component is formed due to the film structure in which the respective elements are dispersed almost uniformly.
After that, the structure usually changes to a structure in which a fine crystal grain of about 20 nm or less and a fine compound of the element group T and N or / and C exist around the crystal grain, and the soft magnetic property of high magnetic permeability and low coercive force. And the properties of low magnetostriction constant, high saturation magnetic flux density and high heat resistance are developed.
【0023】[0023]
【実施例】以下、実施例により本発明を詳細に説明す
る。 〔実施例1〕高周波2極スパッタ装置を用いて磁性膜を
作製した。スパッタリング条件は以下の通りである。 スパッタガス ArあるいはAr+N2 スパッタ時のガス圧 0.66Pa 高周波電力 400W ターゲット基板間距離 50mm 基板温度 50〜100℃(水冷)The present invention will be described in detail below with reference to examples. Example 1 A magnetic film was produced using a high frequency bipolar sputtering device. The sputtering conditions are as follows. Sputtering gas Ar or Ar + N 2 Gas pressure during sputtering 0.66 Pa High frequency power 400 W Target substrate distance 50 mm Substrate temperature 50 to 100 ° C. (water cooling)
【0024】本実施例では、Feターゲットに添加元素
のチップを貼付た複合ターゲットを用いて種々の組成の
膜を作製した。Nを添加する場合は、Nの濃度はスパッ
タガス中のN2 の比率を制御することにより変化させ
た。基板には直径10mmの結晶化ガラスを用い、磁性
膜の膜厚は約2μmとした。膜作製後、Arガス雰囲気
中で575℃、1時間の熱処理をおこない、磁気特性の
測定と耐食性試験を行った。磁性膜の組成はEPMA
法、飽和磁束密度は試料振動型磁束計(VSM)、保磁
力はB−Hカーブトレサー及びVSM、磁歪定数は光テ
コ法、透磁率は8の字コイル法を用いて測定した。また
耐食性の評価は、1/2規定のNaCl水溶液中に試料
を浸漬し、浸漬してから腐食の発生が開始するまでの時
間を耐食時間として計測することにより行った。なお、
腐食の発生開始は、光学顕微鏡観察により、試料表面積
に対する腐食部分の面積の比率が0.1%を越える時点
で判定した。結果を表1に示す。In the present example, films of various compositions were prepared using a composite target in which chips of the additional element were attached to the Fe target. When N was added, the N concentration was changed by controlling the ratio of N 2 in the sputtering gas. Crystallized glass with a diameter of 10 mm was used for the substrate, and the film thickness of the magnetic film was about 2 μm. After the film was formed, heat treatment was performed in an Ar gas atmosphere at 575 ° C. for 1 hour to measure magnetic properties and perform a corrosion resistance test. The composition of the magnetic film is EPMA
Method, the saturation magnetic flux density was measured using a sample vibrating magnetometer (VSM), the coercive force was measured using a BH curve tracer and VSM, the magnetostriction constant was measured using an optical lever method, and the magnetic permeability was measured using a figure-8 coil method. The corrosion resistance was evaluated by immersing the sample in a 1/2 normal NaCl aqueous solution and measuring the time from the immersion until the start of corrosion as the corrosion resistance time. In addition,
The initiation of corrosion was judged by observation with an optical microscope when the ratio of the area of the corroded portion to the surface area of the sample exceeded 0.1%. The results are shown in Table 1.
【0025】[0025]
【表1】 [Table 1]
【0026】表1のように、比較例1〜3のFeTa
C,FeZrN,FeHfC磁性膜は飽和磁束密度が
1.5〜1.6Tと大きく、保磁力、磁歪定数が小さ
く、優れた磁気特性を示す。しかし、1/2規定のNa
Cl溶液に浸漬したときの腐食発生時間がいずれも0.
1hと腐食が発生しやすく、耐食性に問題があった。ま
た、これらの磁性膜の耐食性を向上するために、Crを
添加した比較例4の試料では耐食性向上に効果があるが
十分ではなく、Cr又はAlを多量に添加した比較例5
及び6の試料は、耐食性が大幅に向上し、100時間の
浸漬でも腐食の発生はなかったが、飽和磁束密度が1.
3T未満に大きく低下し、磁歪定数も5〜8×10-6と
大幅に増加した。As shown in Table 1, FeTa of Comparative Examples 1 to 3
The C, FeZrN, FeHfC magnetic film has a large saturation magnetic flux density of 1.5 to 1.6 T, a small coercive force and a magnetostriction constant, and exhibits excellent magnetic characteristics. However, 1/2 normal Na
Corrosion occurrence time when immersed in Cl solution is 0.
Corrosion easily occurred for 1 hour, and there was a problem in corrosion resistance. Further, the sample of Comparative Example 4 in which Cr is added to improve the corrosion resistance of these magnetic films has an effect of improving the corrosion resistance but is not sufficient, and Comparative Example 5 in which Cr or Al is added in a large amount.
The samples of Nos. 6 and 6 had significantly improved corrosion resistance, and no corrosion occurred even after 100 hours of immersion, but the saturation magnetic flux density was 1.
It was significantly reduced to less than 3T, and the magnetostriction constant was significantly increased to 5 to 8 × 10 -6 .
【0027】本実施例の磁性膜では、試料番号1〜12
のようにRu,Rh,Ir,Os,Pd,Ptを添加す
ることにより、耐食時間が10時間以上と耐食性を大幅
に向上し、さらにSiを添加することにより、磁歪定数
の絶対値が4×10-6以下で、ほとんどの場合に2×1
0-6以下の小さい値を有し、さらに1.3T以上飽和磁
束密度を有する磁性膜を得ることができた。In the magnetic film of this example, sample numbers 1 to 12 were used.
As described above, by adding Ru, Rh, Ir, Os, Pd, and Pt, the corrosion resistance time was significantly improved to 10 hours or more, and by adding Si, the absolute value of the magnetostriction constant was 4 ×. 10 -6 or less, 2 × 1 in most cases
0 -6 have the following small value, it was possible to obtain a magnetic film further has a saturation magnetic flux density than 1.3 T.
【0028】また、表1に示すように、Ru,Rh,I
r,Os,Pd,Ptの群の中では、Pd,Ptよりも
Ru,Rh,Ir,Osが耐食性向上の効果がより大き
いことが判った。一方、試料番号13〜15のようにS
i濃度が5%未満の場合は磁歪定数の低減効果が小さ
く、Si濃度が20%を越える場合は飽和磁束密度が
1.3T未満に小さくなり、Ruを15%を越えて添加
した場合には磁歪定数が4×10-6を越えて大きく、ま
た飽和磁束密度が1.3T未満に低下した。Further, as shown in Table 1, Ru, Rh, I
In the group of r, Os, Pd, and Pt, it was found that Ru, Rh, Ir, and Os had a greater effect of improving corrosion resistance than Pd and Pt. On the other hand, as in sample numbers 13 to 15, S
When the i concentration is less than 5%, the effect of reducing the magnetostriction constant is small, when the Si concentration exceeds 20%, the saturation magnetic flux density becomes less than 1.3 T, and when Ru is added in excess of 15%. The magnetostriction constant exceeded 4 × 10 −6 and was large, and the saturation magnetic flux density decreased to less than 1.3T.
【0029】〔実施例2〕実施例1と同様の方法によ
り、Ru,Rh,Ir,Os,Pd,Ptの群から選ば
れる元素の一種以上、及びCr,Alの一種以上及びS
iを同時に添加した試料を作製し、磁気特性及び耐食性
を調べた。結果を表2に示す。Example 2 By the same method as in Example 1, one or more elements selected from the group of Ru, Rh, Ir, Os, Pd and Pt, one or more elements of Cr and Al and S.
A sample to which i was added at the same time was prepared, and its magnetic properties and corrosion resistance were investigated. Table 2 shows the results.
【0030】[0030]
【表2】 [Table 2]
【0031】表2のように、試料番号16〜20の試料
において、Ru,Rh,Ir,Os,Pd,Ptの群か
ら選ばれる元素の一種以上、Cr,Alの一種以上、及
びSiを同時に添加することにより、耐食時間が10時
間以上と耐食性を大幅に向上し、磁歪定数の絶対値が4
×10-6以下で、ほとんどの場合に2×10-6以下の小
さい値を有し、さらに1.3T以上飽和磁束密度を有す
る磁性膜を得ることができた。一方、Cr又はAlが1
5%を越える試料番号21及び22の試料では、飽和磁
束密度が1.3T未満となり、さらに磁歪定数も4×1
0-6を越えて大きくなった。As shown in Table 2, in the samples Nos. 16 to 20, at least one element selected from the group consisting of Ru, Rh, Ir, Os, Pd and Pt, at least one element selected from Cr and Al, and Si at the same time. By adding it, the corrosion resistance is significantly improved to 10 hours or more, and the absolute value of the magnetostriction constant is 4
× 10 -6 or less, having a most small value of 2 × 10 -6 or less in the case, it was possible to obtain a magnetic film further has a saturation magnetic flux density than 1.3 T. On the other hand, Cr or Al is 1
In the samples Nos. 21 and 22 exceeding 5%, the saturation magnetic flux density was less than 1.3 T, and the magnetostriction constant was 4 × 1.
It increased beyond 0 -6.
【0032】〔実施例3〕実施例1と同様の方法によ
り、Ru,Rh,Ir,Os,Pd,Ptの群から選ば
れる元素の一種以上、Ni,Coの一種以上、及びSi
を同時に添加した試料を作製し、磁気特性及び耐食性を
調べた。結果を表3に示す。Example 3 By the same method as in Example 1, one or more elements selected from the group of Ru, Rh, Ir, Os, Pd and Pt, one or more elements of Ni and Co, and Si
A sample to which was added at the same time was prepared, and its magnetic characteristics and corrosion resistance were investigated. The results are shown in Table 3.
【0033】[0033]
【表3】 [Table 3]
【0034】表3のように、試料番号23〜27の試料
において、Ru,Rh,Ir,Os,Pd,Ptの群か
ら選ばれる元素の一種以上、Ni,Coの一種以上、及
びSiを同時に添加することにより、耐食時間が10時
間以上と耐食性を大幅に向上し、磁歪定数の絶対値が4
×10-6以下で、ほとんどの場合に2×10-6以下の小
さい値を有し、さらに1.3T以上飽和磁束密度を有す
る磁性膜を得ることができた。一方、Co又はNiが1
5%を越える試料番号28及び29の試料では、磁歪定
数が4×10-6を越えて極めて大きくなった。As shown in Table 3, in the samples Nos. 23 to 27, at least one element selected from the group of Ru, Rh, Ir, Os, Pd and Pt, at least one element selected from Ni and Co, and Si at the same time. By adding it, the corrosion resistance is significantly improved to 10 hours or more, and the absolute value of the magnetostriction constant is 4
× 10 -6 or less, having a most small value of 2 × 10 -6 or less in the case, it was possible to obtain a magnetic film further has a saturation magnetic flux density than 1.3 T. On the other hand, Co or Ni is 1
In the samples of sample numbers 28 and 29 exceeding 5%, the magnetostriction constant exceeded 4 × 10 −6 and became extremely large.
【0035】〔実施例4〕実施例1と同様の方法によ
り、Ru,Rh,Ir,Os,Pd,Ptの群から選ば
れる元素の一種以上、Ni,Coの一種以上、Cr,A
lの一種以上、及びSiを同時に添加した試料を作製
し、磁気特性及び耐食性を調べた。結果を表4に示す。Example 4 By the same method as in Example 1, one or more elements selected from the group of Ru, Rh, Ir, Os, Pd and Pt, one or more elements of Ni and Co, Cr and A
A sample was prepared by simultaneously adding one or more of 1 and Si, and the magnetic properties and corrosion resistance were investigated. The results are shown in Table 4.
【0036】[0036]
【表4】 [Table 4]
【0037】表4のように、試料番号30〜34の試料
において、Ru,Rh,Ir,Os,Pd,Ptの群か
ら選ばれる元素の一種以上、Ni,Coの一種以上、A
l,Crの一種以上、及びSiを同時に添加することに
より、耐食時間が10時間以上と耐食性を大幅に向上
し、磁歪定数の絶対値が4×10-6以下で、ほとんどの
場合に2×10-6以下の小さい値を有し、さらに1.3
T以上飽和磁束密度を有する磁性膜を得ることができ
た。As shown in Table 4, in samples Nos. 30 to 34, one or more elements selected from the group of Ru, Rh, Ir, Os, Pd and Pt, one or more elements of Ni and Co, A
By simultaneously adding 1 or more of Cr and 1 and Si, the corrosion resistance is significantly improved to 10 hours or more, and the absolute value of the magnetostriction constant is 4 × 10 −6 or less, which is 2 × in most cases. Has a small value of 10 -6 or less, and further 1.3
A magnetic film having a saturation magnetic flux density of T or more could be obtained.
【0038】一方、元素群XのPd、元素群YのAl、
及び元素群MのNiの濃度の和が15%を越える試料番
号35の試料では、磁歪定数が4×10-6を越えて極め
て大きくなった。前記試料番号1〜12,16〜20,
23〜27,30〜34の試料をX線回折及び透過電子
顕微鏡により観察した結果、各磁性膜はいずれもFeを
主成分とする微細な結晶粒と、その結晶粒の周囲に存在
するZr,Hf,Ta,Nb等の元素群Tと、C,Nの
元素群Zの化合物で構成されており、Feを主成分とす
る結晶粒の平均粒径はいずれも10〜20nm、窒化
物、炭化物の結晶粒径は3〜8nmであった。On the other hand, Pd of the element group X, Al of the element group Y,
Also, in the sample of Sample No. 35 in which the sum of the Ni concentrations of the element group M exceeded 15%, the magnetostriction constant exceeded 4 × 10 −6 and became extremely large. The sample numbers 1 to 12, 16 to 20,
As a result of observing the samples 23 to 27 and 30 to 34 by X-ray diffraction and a transmission electron microscope, each magnetic film has fine crystal grains containing Fe as a main component and Zr, which exists around the crystal grains, It is composed of a compound of an element group T such as Hf, Ta, Nb and the like, and a compound of an element group Z of C, N, and the average grain size of crystal grains containing Fe as a main component is 10 to 20 nm, nitride and carbide. Had a crystal grain size of 3 to 8 nm.
【0039】以上の各実施例に示されるように、本発明
による磁性膜は飽和磁束密度、保磁力等の磁気特性及び
耐食性に優れており、VTR用及び磁気ディスク用磁気
ヘッドのコア材料として好適である。As shown in each of the above embodiments, the magnetic film according to the present invention is excellent in magnetic characteristics such as saturation magnetic flux density and coercive force and corrosion resistance, and is suitable as a core material for magnetic heads for VTRs and magnetic disks. Is.
【0040】〔実施例5〕本発明の磁性膜を用いて、図
1に示すように、フェライト基板1を用いるフェライト
ヘッドのギャップ2の近傍に磁性膜3を形成した、いわ
ゆるMIGヘッドを作製した。磁性膜3の膜厚は5μm
とした。4,5は、低融点のボンディングガラスであ
る。磁気ヘッドの使用時に磁気テープでヘッドを摺動す
ると、図2に示すように、材料による摩耗速度の差によ
りフェライト1と磁性膜3との間に段差dを生ずる。こ
の結果、スペーシング損失を生じて高周波領域で出力の
低下を生ずる。これらのヘッドを、保磁力1500Oe
のメタルテープを用い、相対速度3.75m/sで1時
間走行した後のフェライト基板1と磁性膜3の段差d、
及び7MHzにおける記録再生出力を測定した。結果を
表5に示した。Example 5 Using the magnetic film of the present invention, as shown in FIG. 1, a so-called MIG head was produced in which the magnetic film 3 was formed in the vicinity of the gap 2 of the ferrite head using the ferrite substrate 1. . The thickness of the magnetic film 3 is 5 μm
And Reference numerals 4 and 5 are low melting point bonding glasses. When the magnetic tape is slid on the magnetic tape when the magnetic head is used, a step d is formed between the ferrite 1 and the magnetic film 3 due to the difference in the abrasion speed due to the material, as shown in FIG. As a result, spacing loss occurs and the output decreases in the high frequency region. These heads have coercive force of 1500 Oe
Using the metal tape of, the step d between the ferrite substrate 1 and the magnetic film 3 after traveling for 1 hour at a relative speed of 3.75 m / s,
And the recording / reproducing output at 7 MHz was measured. The results are shown in Table 5.
【0041】[0041]
【表5】 [Table 5]
【0042】表5から分かるように、本発明の磁性膜を
使用した磁気ヘッドは従来例と比較してフェライト1と
磁性膜3の段差dが小さく、この結果、記録再生出力が
大きく向上している。これは、本発明の磁性膜が耐食性
に優れるため、耐摩耗性が大幅に向上したためと考えら
れる。上記のように耐食性、耐摩耗性に優れ、使用中の
記録再生出力の劣化が小さい磁気ヘッドを磁気記録装置
に使用すると、信頼性の高い装置を実現することができ
る。また、特に腐食が問題となる環境、例えば高湿度を
経験する環境や、塩素などの腐食性物質が存在する環境
で使用する場合に、信頼性を向上した装置として優れて
いる。As can be seen from Table 5, the magnetic head using the magnetic film of the present invention has a smaller step d between the ferrite 1 and the magnetic film 3 as compared with the conventional example, and as a result, the recording / reproducing output is greatly improved. There is. It is considered that this is because the magnetic film of the present invention has excellent corrosion resistance, and thus has significantly improved wear resistance. As described above, when a magnetic head having excellent corrosion resistance and abrasion resistance and little deterioration in recording / reproducing output during use is used in a magnetic recording apparatus, a highly reliable apparatus can be realized. Further, it is excellent as a device having improved reliability especially when used in an environment where corrosion is a problem, for example, an environment where high humidity is experienced or an environment where corrosive substances such as chlorine are present.
【0043】[0043]
【発明の効果】以上詳述したように、本発明による磁性
膜は高い飽和磁束密度と低保磁力及び低磁歪定数の優れ
た軟磁気特性を有しており、さらに高耐食性、耐摩耗性
を有している。これを磁気ヘッドコアに用いることによ
り、優れた記録再生特性、信頼性を有する磁気ヘッド及
び磁気記録装置を実現することができる。As described in detail above, the magnetic film according to the present invention has excellent saturation magnetic flux density, low coercive force and low magnetostriction constant and excellent soft magnetic properties, and further has high corrosion resistance and wear resistance. Have By using this in a magnetic head core, it is possible to realize a magnetic head and a magnetic recording device having excellent recording / reproducing characteristics and reliability.
【図面の簡単な説明】[Brief description of drawings]
【図1】磁気ヘッドの構造を示す図。FIG. 1 is a diagram showing a structure of a magnetic head.
【図2】テープ摺動面でのフェライト基板と磁性膜の段
差を示す図。FIG. 2 is a diagram showing a step between a ferrite substrate and a magnetic film on a tape sliding surface.
1…フェライト基板、2…ギャップ、3…磁性膜、4,
5…低融点ガラス1 ... Ferrite substrate, 2 ... Gap, 3 ... Magnetic film, 4,
5 ... Low melting glass
Claims (17)
TはTi,Zr,Hf,Nb,Ta,Mo,Wの群から
選ばれる元素の少なくとも一種、XはRu,Rh,O
s,Ir,Pd,Ptの群から選ばれる元素の少なくと
も一種、ZはC,Nの群から選ばれる元素の少なくとも
一種であって、a,c,d,e,gは原子%を表し、5
≦c≦20,2≦d≦20,0.5≦e≦15,1≦g
≦20、かつ、a+c+d+e+g=100、で表され
る組成を有することを特徴とする磁性膜。1. A composition formula: Fe a Si c T d X e Z g, where
T is at least one element selected from the group consisting of Ti, Zr, Hf, Nb, Ta, Mo and W, and X is Ru, Rh, O.
at least one element selected from the group consisting of s, Ir, Pd, and Pt, Z is at least one element selected from the group consisting of C and N, and a, c, d, e, and g represent atomic%, 5
≤c≤20, 2≤d≤20, 0.5≤e≤15, 1≤g
A magnetic film having a composition represented by ≦ 20 and a + c + d + e + g = 100.
し、TはTi,Zr,Hf,Nb,Ta,Mo,Wの群
から選ばれる元素の少なくとも一種、XはRu,Rh,
Os,Ir,Pd,Ptの群から選ばれる元素の少なく
とも一種、YはCr,Alの群から選ばれる元素の少な
くとも一種、ZはC,Nの群から選ばれる元素の少なく
とも一種であって、a,c,d,e,f,gは原子%を
表し、5≦c≦20,2≦d≦20,0.5≦e≦1
5,f≦15,1≦g≦20、かつ、a+c+d+e+
f+g=100、で表される組成を有することを特徴と
する磁性膜。2. A composition formula: Fe a Si c T d X e Y f Z g, where, T is Ti, Zr, Hf, Nb, Ta, Mo, at least one element selected from the group of W, X is Ru, Rh,
At least one element selected from the group of Os, Ir, Pd, and Pt, Y at least one element selected from the group of Cr and Al, and Z at least one element selected from the group of C and N, a, c, d, e, f, g represent atomic%, 5 ≦ c ≦ 20, 2 ≦ d ≦ 20, 0.5 ≦ e ≦ 1
5, f ≦ 15, 1 ≦ g ≦ 20, and a + c + d + e +
A magnetic film having a composition represented by f + g = 100.
し、MはCo,Niの群から選ばれる元素の少なくとも
一種、TはTi,Zr,Hf,Nb,Ta,Mo,Wの
群から選ばれる元素の少なくとも一種、XはRu,R
h,Os,Ir,Pd,Ptの群から選ばれる元素の少
なくとも一種、ZはC,Nの群から選ばれる元素の少な
くとも一種であって、a,b,c,d,e,gは原子%
を表し、b≦15,5≦c≦20,2≦d≦20,0.
5≦e≦15,1≦g≦20、かつ、a+b+c+d+
e+g=100、で表される組成を有することを特徴と
する磁性膜。3. A composition formula: Fe a M b Si c T d X e Z g, provided that at least one element M selected Co, from the group of Ni, T is Ti, Zr, Hf, Nb, Ta, At least one element selected from the group consisting of Mo and W, X is Ru and R
at least one element selected from the group of h, Os, Ir, Pd, and Pt, Z is at least one element selected from the group of C and N, and a, b, c, d, e, and g are atoms. %
, B ≦ 15,5 ≦ c ≦ 20, 2 ≦ d ≦ 20,0.
5 ≦ e ≦ 15, 1 ≦ g ≦ 20, and a + b + c + d +
A magnetic film having a composition represented by e + g = 100.
但し、MはCo,Niの群から選ばれる元素の少なくと
も一種、TはTi,Zr,Hf,Nb,Ta,Mo,W
の群から選ばれる元素の少なくとも一種、XはRu,R
h,Os,Ir,Pd,Ptの群から選ばれる元素の少
なくとも一種、YはCr,Alの群から選ばれる元素の
少なくとも一種、ZはC,Nの群から選ばれる元素の少
なくとも一種であって、a,b,c,d,e,gは原子
%を表し、b≦15,5≦c≦20,2≦d≦20,
0.5≦e≦15,f≦15,1≦g≦20、かつ、a
+b+c+d+e+f+g=100、で表される組成を
有することを特徴とする磁性膜。4. A composition formula: Fe a M b Si c T d X e Y f Z g ,
However, M is at least one element selected from the group of Co and Ni, and T is Ti, Zr, Hf, Nb, Ta, Mo and W.
At least one element selected from the group of X, Ru is R, R
h, Os, Ir, Pd, at least one element selected from the group of Pt, Y is at least one element selected from the group of Cr and Al, Z is at least one element selected from the group of C and N And a, b, c, d, e, g represent atomic%, b ≦ 15, 5 ≦ c ≦ 20, 2 ≦ d ≦ 20,
0.5 ≦ e ≦ 15, f ≦ 15, 1 ≦ g ≦ 20, and a
A magnetic film having a composition represented by + b + c + d + e + f + g = 100.
ばれる元素の少なくとも一種からなることを特徴とする
請求項1〜4のいずれか1項記載の磁性膜。5. The magnetic film according to claim 1, wherein X comprises at least one element selected from the group consisting of Ru, Rh, Ir and Os.
あることを特徴とする請求項1〜5のいずれか1項記載
の磁性膜。6. The magnetic film according to claim 1, wherein the concentration of the element X is in the range of 3 ≦ e ≦ 15.
あることを特徴とする請求項1〜6のいずれか1項記載
の磁性膜。7. The magnetic film according to claim 1, wherein the Si concentration is in the range of 10 ≦ c ≦ 15.
0,3≦e≦10,3≦g≦10であることを特徴とす
る請求項1〜4のいずれか1項記載の磁性膜。8. The concentration of the elements T, X and Z is 2 ≦ d ≦ 1.
The magnetic film according to claim 1, wherein 0,3 ≦ e ≦ 10 and 3 ≦ g ≦ 10.
特徴とする請求項2又は4記載の磁性膜。9. The magnetic film according to claim 2, wherein the concentration of the element Y is f ≦ 10.
を特徴とする請求項3又は4記載の磁性膜。10. The magnetic film according to claim 3, wherein the concentration of the element M is b ≦ 10.
≦15であることを特徴とする請求項請求項2、4又は
9記載の磁性膜。11. The sum of the concentrations of element X and element Y is e + f
The magnetic film according to claim 2, 4 or 9, wherein ≦ 15.
≦15であることを特徴とする請求項3、4又は10記
載の磁性膜。12. The sum of the concentrations of the element M and the element X is b + e.
The magnetic film according to claim 3, 4 or 10, wherein ≦ 15.
が、b+e+f≦15であることを特徴とする請求項4
記載の磁性膜。13. The sum of the concentrations of the element M, the element X and the element Y is b + e + f ≦ 15.
The magnetic film described.
とを特徴とする請求項1〜13のいずれか1項記載の磁
性膜。14. The magnetic film according to claim 1, which has an average crystal grain size of 50 nm or less.
とを特徴とする請求項1〜13のいずれか1項記載の磁
性膜。15. The magnetic film according to claim 1, which has an average crystal grain size of 20 nm or less.
磁性膜を磁気コアの少なくとも一部に用いたことを特徴
とする磁気ヘッド。16. A magnetic head, wherein the magnetic film according to claim 1 is used for at least a part of a magnetic core.
くとも1個備えることを特徴とする磁気記録装置。17. A magnetic recording apparatus comprising at least one magnetic head according to claim 16.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6190694A JPH0855722A (en) | 1994-08-12 | 1994-08-12 | Corrosion resistant high saturation magnetic flux density magnetic film and magnetic head using the same |
| US08/509,584 US5858548A (en) | 1994-08-12 | 1995-07-31 | Soft magnetic thin film, and magnetic head and magnetic recording device using the same |
| DE19529167A DE19529167A1 (en) | 1994-08-12 | 1995-08-08 | Soft magnetic thin film and magnetic head and magnetic recording apparatus using the same |
| KR1019950024497A KR0178080B1 (en) | 1994-08-12 | 1995-08-09 | Soft magnetic film, magnetic head and magnetic recording device using the same |
| US08/595,080 US5873955A (en) | 1994-08-12 | 1996-02-01 | Soft magnetic thin film, and magnetic head and magnetic recording device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6190694A JPH0855722A (en) | 1994-08-12 | 1994-08-12 | Corrosion resistant high saturation magnetic flux density magnetic film and magnetic head using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0855722A true JPH0855722A (en) | 1996-02-27 |
Family
ID=16262310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6190694A Pending JPH0855722A (en) | 1994-08-12 | 1994-08-12 | Corrosion resistant high saturation magnetic flux density magnetic film and magnetic head using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0855722A (en) |
-
1994
- 1994-08-12 JP JP6190694A patent/JPH0855722A/en active Pending
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