JPH0855929A - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPH0855929A JPH0855929A JP6190205A JP19020594A JPH0855929A JP H0855929 A JPH0855929 A JP H0855929A JP 6190205 A JP6190205 A JP 6190205A JP 19020594 A JP19020594 A JP 19020594A JP H0855929 A JPH0855929 A JP H0855929A
- Authority
- JP
- Japan
- Prior art keywords
- conductive foil
- resin wiring
- metal substrate
- integrated circuit
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
- H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】
【目的】 ワイヤーの本数を削減でき、生産性を向上で
きる混成集積回路装置を提供する。
【構成】 入出力用リード端子１６を金属基板１の導電
箔４と樹脂配線基板５の導電箔８に半田１８により固着
する。これにより金属基板１の導電箔４と樹脂配線基板
５の導電箔８を入出力用リード端子１６を介して導通を
とることができ、従来のように金属基板１の導電箔４と
樹脂配線基板５の導電箔８をワイヤーによって接続する
必要はなくなる。
(57) [Abstract] [Purpose] To provide a hybrid integrated circuit device capable of reducing the number of wires and improving productivity. [Structure] Input / output lead terminals 16 are fixed to conductive foil 4 of metal substrate 1 and conductive foil 8 of resin wiring substrate 5 with solder 18. As a result, the conductive foil 4 of the metal substrate 1 and the conductive foil 8 of the resin wiring substrate 5 can be electrically connected via the input / output lead terminals 16, and the conductive foil 4 of the metal substrate 1 and the resin wiring substrate can be formed as in the conventional case. It is not necessary to connect the conductive foil 8 of No. 5 with a wire.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、貼り合わせ基板を使用
した混成集積回路装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device using a bonded substrate.
【０００２】[0002]
【従来の技術】近年、混成集積回路装置は、高密度実装
のために基板が２種類以上の基板の貼り合わせで構成さ
れている。2. Description of the Related Art In recent years, hybrid integrated circuit devices have been constructed by laminating two or more types of substrates for high-density mounting.
【０００３】以下図面を参照しながら、上述した従来の
混成集積回路装置の一例について説明する。図３および
図４は従来の混成集積回路装置の斜視図およびＢ−Ｂ断
面図を示す。図３、図４において、１は金属基板、２は
金属基板１のベースの金属板、３は金属板２の上に形成
された絶縁層、４は金属基板１の導電箔、５は金属基板
１の上に貼り合わせた樹脂配線基板、６は樹脂配線基板
５のベース材、７は樹脂配線基板５と金属基板１を貼り
合わせる接着または絶縁層、８は樹脂配線基板５の導電
箔、９はベース材６と導電箔８を接着する接着層、１０
は半導体、１１は半導体１０が搭載される放熱用ヒート
シンク、１２は放熱用ヒートシンク１１と金属基板１の
導電箔４を接続する半田、１３は半導体１０と樹脂配線
基板５の導電箔８を接続するワイヤー、１４は樹脂配線
基板５の導電箔８と金属基板１の導電箔４を接続するワ
イヤー、１５は入出力用リード端子、１７は入出力用リ
ード端子１５と金属基板１の導電箔４と接続する半田、
１９は放熱用ヒートシンク１１と半導体１０を固着する
高融点半田、２０は放熱用ヒートシンク１１が貫通する
ように樹脂配線基板５に設けた孔である。An example of the conventional hybrid integrated circuit device described above will be described below with reference to the drawings. 3 and 4 are a perspective view and a BB sectional view of a conventional hybrid integrated circuit device. In FIGS. 3 and 4, 1 is a metal substrate, 2 is a base metal plate of the metal substrate 1, 3 is an insulating layer formed on the metal plate 2, 4 is a conductive foil of the metal substrate 1, and 5 is a metal substrate. 1 is a resin wiring substrate bonded onto 1; 6 is a base material of the resin wiring substrate 5; 7 is an adhesive or insulating layer for bonding the resin wiring substrate 5 and the metal substrate 1; 8 is a conductive foil of the resin wiring substrate 5; Is an adhesive layer for adhering the base material 6 and the conductive foil 8 to each other.
Is a semiconductor, 11 is a heat sink for heat dissipation on which the semiconductor 10 is mounted, 12 is solder for connecting the heat sink 11 for heat dissipation and the conductive foil 4 of the metal substrate 1, and 13 is for connecting the semiconductor 10 and the conductive foil 8 of the resin wiring substrate 5. Wires, 14 are wires connecting the conductive foil 8 of the resin wiring substrate 5 and the conductive foil 4 of the metal substrate 1, 15 is an input / output lead terminal, 17 is an input / output lead terminal 15 and the conductive foil 4 of the metal substrate 1. Solder to connect,
Reference numeral 19 is a high melting point solder for fixing the heat sink 11 for heat radiation and the semiconductor 10, and 20 is a hole provided in the resin wiring substrate 5 so that the heat sink 11 for heat radiation penetrates.
【０００４】以上のように構成された混成集積回路装置
について、以下その動作について説明する。ヒートシン
ク１１に高融点半田１９で半導体１０を固着する。次
に、金属基板１に接着剤７を介してこの樹脂配線基板５
を貼り合わせ、この樹脂配線基板５に設けた孔２０を通
して金属基板１上に半田１２により放熱用ヒートシンク
１１を固着する。そして、ワイヤー１３で半導体１０と
樹脂配線基板５の導電箔８を接続して導通をとる。また
ワイヤー１４で金属基板１の導電箔４と樹脂配線基板５
の導電箔８を接続して導通をとる。次に、入出力用リー
ド端子１５を金属基板１の導電箔４に半田１７により固
着して混成集積回路装置を生産する。The operation of the hybrid integrated circuit device configured as described above will be described below. The semiconductor 10 is fixed to the heat sink 11 with the high melting point solder 19. Next, the resin wiring substrate 5 is attached to the metal substrate 1 via the adhesive 7.
And the heat sink 11 for heat radiation is fixed to the metal substrate 1 with the solder 12 through the holes 20 provided in the resin wiring substrate 5. Then, the semiconductor 10 and the conductive foil 8 of the resin wiring board 5 are connected by the wire 13 to establish conduction. In addition, the wire 14 is used for the conductive foil 4 of the metal substrate 1 and the resin wiring substrate 5.
The conductive foil 8 is connected to establish continuity. Next, the input / output lead terminals 15 are fixed to the conductive foil 4 of the metal substrate 1 with solder 17 to produce a hybrid integrated circuit device.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記のよ
うな従来の混成集積回路装置は、ワイヤーの本数が多
く、生産性が悪いという問題点を有していた。However, the conventional hybrid integrated circuit device as described above has a problem in that the number of wires is large and the productivity is poor.
【０００６】本発明は、上記従来の問題点に鑑み、ワイ
ヤーの本数を削減でき、生産性を向上できる混成集積回
路装置を提供することを目的とするものである。In view of the above-mentioned conventional problems, it is an object of the present invention to provide a hybrid integrated circuit device capable of reducing the number of wires and improving productivity.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に本発明の混成集積回路装置は、入出力用リード端子を
介して貼り合わせ基板の異層間の導電箔の導通をとるよ
うに構成したものである。In order to solve the above-mentioned problems, the hybrid integrated circuit device of the present invention is configured so that the conductive foils between different layers of the bonded substrate are electrically connected via the input / output lead terminals. It is a thing.
【０００８】[0008]
【作用】本発明は上記した構成によって、ワイヤーの本
数は削減され、生産性は大幅に向上する。According to the present invention, the number of wires is reduced and the productivity is greatly improved by the above configuration.
【０００９】[0009]
【実施例】以下本発明の一実施例について、図面を参照
しながら詳細に説明する。図１および図２は本発明の一
実施例における混成集積回路装置の斜視図およびＡ−Ａ
断面図を示す。図１、図２において、１は金属基板、２
は金属基板１のベースの金属板、３は金属板２の上に形
成された絶縁層、４は金属基板１の導電箔、５は金属基
板１の上に貼り合わせた樹脂配線基板、６は樹脂配線基
板５のベース材、７は樹脂配線基板５と金属基板１を貼
り合わせる接着または絶縁層、８は樹脂配線基板５の導
電箔、９はベース材６と導電箔８を接着する接着層、１
０は半導体、１１は半導体１０が搭載される放熱用ヒー
トシンク、１２は放熱用ヒートシンク１１と金属基板１
の導電箔４を接続する半田、１３は半導体１０と樹脂配
線基板５の導電箔８を接続するワイヤー、１６は入出力
用リード端子、１８は入出力用リード端子１６を介して
金属基板１の導電箔４と樹脂配線基板５の導電箔８を接
続する半田、１９は放熱用ヒートシンク１１と半導体１
０を固着する高融点半田、２０は放電用ヒートシンク１
１が貫通するように樹脂配線基板に設けた孔である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. 1 and 2 are perspective views and AA of a hybrid integrated circuit device according to an embodiment of the present invention.
A sectional view is shown. 1 and 2, 1 is a metal substrate, 2
Is a base metal plate of the metal substrate 1, 3 is an insulating layer formed on the metal plate 2, 4 is a conductive foil of the metal substrate 1, 5 is a resin wiring substrate bonded on the metal substrate 1, and 6 is Base material of resin wiring board 5, 7 is an adhesive or insulating layer for bonding resin wiring board 5 and metal substrate 1, 8 is a conductive foil of resin wiring board 5, and 9 is an adhesive layer for bonding base material 6 and conductive foil 8. 1
Reference numeral 0 is a semiconductor, 11 is a heat sink for heat dissipation on which the semiconductor 10 is mounted, 12 is a heat sink 11 for heat dissipation and the metal substrate 1.
For connecting the conductive foil 4 of the above, 13 for a wire for connecting the semiconductor 10 and the conductive foil 8 of the resin wiring substrate 5, 16 for input / output lead terminals, and 18 for the metal substrate 1 via the input / output lead terminals 16. Solder for connecting the conductive foil 4 and the conductive foil 8 of the resin wiring board 5, and 19 for the heat sink 11 for heat dissipation and the semiconductor 1
High melting point solder for fixing 0, 20 for heat sink for discharge 1
1 is a hole provided in the resin wiring board so as to penetrate therethrough.
【００１０】以上のように構成された混成集積回路装置
について、以下その動作について説明する。まずヒート
シンク１１に高融点半田１９で半導体１０を固着する。
次に、金属基板１に接着剤７を介して樹脂配線基板５を
貼り合わせ、この樹脂配線板５に設けた孔２０を通して
金属基板１上に半田１２により放熱用ヒートシンク１１
を固着する。そして、ワイヤー１３で半導体１０と樹脂
配線基板５の導電箔８を接続して導通をとる。次に、入
出力用リード端子１６を金属基板１の導電箔４と樹脂配
線基板５の導電箔８に半田１８により固着して混成集積
回路装置を生産する。このとき、金属基板１の導電箔４
と樹脂配線基板５の導電箔８は入出力用リード端子１６
を介して導通がとられることになる。The operation of the hybrid integrated circuit device configured as described above will be described below. First, the semiconductor 10 is fixed to the heat sink 11 with the high melting point solder 19.
Next, the resin wiring board 5 is attached to the metal substrate 1 via the adhesive agent 7, and the heat sink 11 for heat radiation by soldering 12 onto the metal substrate 1 through the holes 20 provided in the resin wiring board 5.
To fix. Then, the semiconductor 10 and the conductive foil 8 of the resin wiring board 5 are connected by the wire 13 to establish conduction. Next, the input / output lead terminals 16 are fixed to the conductive foil 4 of the metal substrate 1 and the conductive foil 8 of the resin wiring substrate 5 with solder 18 to produce a hybrid integrated circuit device. At this time, the conductive foil 4 of the metal substrate 1
And the conductive foil 8 of the resin wiring board 5 are the input / output lead terminals 16
Conduction will be established through.
【００１１】以上のように本実施例によれば、従来のよ
うにワイヤー１４で金属基板１の導電箔４と樹脂配線基
板５の導電箔８を接続して導通をとる必要がなく、ワイ
ヤーの本数を削減できる。As described above, according to the present embodiment, it is not necessary to connect the conductive foil 4 of the metal substrate 1 and the conductive foil 8 of the resin wiring substrate 5 with the wire 14 to establish conduction as in the conventional case. The number can be reduced.
【００１２】[0012]
【発明の効果】以上のように本発明によれば、樹脂配線
基板と金属基板の異層間の導電箔の電気的導通をワイヤ
ーを介さず接続することができ、生産性を大幅に向上す
ることができる。As described above, according to the present invention, the electrical continuity of the conductive foil between different layers of the resin wiring substrate and the metal substrate can be connected without using a wire, and the productivity is greatly improved. You can
【図１】本発明の一実施例における混成集積回路装置の
斜視図である。FIG. 1 is a perspective view of a hybrid integrated circuit device according to an embodiment of the present invention.
【図２】本発明の一実施例における混成集積回路装置の
Ａ−Ａ断面図である。FIG. 2 is a sectional view taken along line AA of the hybrid integrated circuit device according to the embodiment of the present invention.
【図３】従来の混成集積回路装置の斜視図である。FIG. 3 is a perspective view of a conventional hybrid integrated circuit device.
【図４】従来の混成集積回路装置のＢ−Ｂ断面図であ
る。FIG. 4 is a BB cross-sectional view of a conventional hybrid integrated circuit device.
１ 金属基板 ２ 金属基板１のベースの金属板 ３ 金属板２の上に形成された絶縁層 ４ 金属基板１の導電箔 ５ 樹脂配線基板 ６ 樹脂配線基板５のベース材 ７ 樹脂配線基板５と金属基板１を貼り合わせる接着
または絶縁層 ８ 樹脂配線基板５の導電箔 ９ ベース材６と導電箔７を接着する接着層 １０ 半導体 １１ 放熱用ヒートシンク １２ 放熱用ヒートシンク１１と導電箔４を接続する半
田 １３ 半導体１０と導電箔８を接続するワイヤー １６ 入出力用リード端子 １８ 入出力用リード端子１６を介して導電箔４と導電
箔８と接続する半田 １９ 放熱用ヒートシンク１１と半導体１０を固着する
高融点半田 ２０ 樹脂配線基板５に設けた孔1 Metal Substrate 2 Base Metal Plate of Metal Substrate 1 Insulation Layer Formed on Metal Plate 2 Conductive Foil of Metal Substrate 5 Resin Wiring Substrate 6 Base Material of Resin Wiring Substrate 7 Resin Wiring Substrate 5 and Metal Adhesive or insulating layer for bonding the substrate 1 8 Conductive foil of the resin wiring substrate 5 Adhesive layer for adhering the base material 6 and the conductive foil 7 Semiconductor 11 Heat sink for heat dissipation 12 Solder for connecting heat sink 11 for heat dissipation and the conductive foil 4 13 Wire 16 for connecting semiconductor 10 and conductive foil 8 Input / output lead terminal 18 Solder for connecting conductive foil 4 and conductive foil 8 via input / output lead terminal 16 High melting point for fixing heat sink 11 for heat dissipation and semiconductor 10 Solder 20 Hole provided in resin wiring board 5
Claims (1)
基板の異層間の導電箔の導通をとるように構成したこと
を特徴とする混成集積回路装置。1. A hybrid integrated circuit device characterized in that a conductive foil between different layers of a bonded substrate is electrically connected via an input / output lead terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6190205A JPH0855929A (en) | 1994-08-12 | 1994-08-12 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6190205A JPH0855929A (en) | 1994-08-12 | 1994-08-12 | Hybrid integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0855929A true JPH0855929A (en) | 1996-02-27 |
Family
ID=16254217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6190205A Pending JPH0855929A (en) | 1994-08-12 | 1994-08-12 | Hybrid integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0855929A (en) |
-
1994
- 1994-08-12 JP JP6190205A patent/JPH0855929A/en active Pending
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