JPH0855932A - TGA type semiconductor device - Google Patents

Abstract

(57) [Abstract] [Object] An object of the present invention is to provide a semiconductor device having a highly reliable connection structure that is easy to mount and handle even when the connection terminals of the semiconductor device are narrowed. Especially. [Structure] Through holes 20 arranged in a lattice are provided in a specific region of a semiconductor device.
It is possible to easily separate the conductive bonding material 25 filling the inside of 0 and the conductive bonding material 25 fluidized by heating on the inner peripheral surface thereof from the inner peripheral surface of the through hole 20. And a different conductor layer 20b.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TGA type semiconductor device, and more particularly, to an inner peripheral surface of a through hole which connects a conductive circuit pattern on the upper surface side and a conductive wiring pattern on the lower surface side of a semiconductor element mounting substrate. The present invention relates to the structure of a through hole provided with a conductor layer.

[0002]

2. Description of the Related Art Conventionally, semiconductor devices such as IC and LSI are
It is connected to a connection terminal of a wiring pattern on a mounting board (printed board) by using solder or the like. These are DIs in which a large number of terminal leads protrude from the peripheral edge of the resin encapsulant.
In addition to P, SOP, QFP, etc., it is referred to as BGA (ball grid array), and solder balls are formed on the lower surface side of the semiconductor element mounting board, and the solder balls are used to mount on the mounting board. , Semiconductor devices for connection have been proposed. This semiconductor device is mounted on a board (printed board)
In order to mount the device, it is necessary to place it on the wiring pattern on the mounting board, position it, and fix it by heating.

As an example of this, for example, US Pat. No. 5
216278. This semiconductor device is provided with a through hole in which a conductor layer made of a copper plating layer is formed on the inner peripheral surface of a through hole, and a semiconductor element mounting board having circuit patterns formed on both sides, and a semiconductor element mounted on the surface thereof. One end of the bonding wire is connected to one of the electrode pads of the semiconductor element, and the other end is connected to one of the terminal leads of the circuit pattern to form an electrical conduction circuit, and the surface side thereof is sealed. A resin-sealed body sealed with a resin,
There is a so-called BGA (ball grid array) in which solder balls (solder balls) are formed on the back surface side of the substrate.

Such a BGA (ball grid
When mounting an array type semiconductor device on a mounting board, cream solder or flux is applied to the connection terminals of the wiring pattern on the mounting board (printed circuit board) and the solder balls (solder balls) are positioned on the connection terminals. Let
After that, it is passed through a reflow device to heat the solder and
The balls (solder balls) are melted and connected to the connection terminals on the mounting board (printed board) to complete the process.

[0005]

However, since a solder ball (solder ball) is provided on the back surface of this type of semiconductor device, the solder ball may fall off or be damaged during handling such as transportation. Occurs, and the surface condition is deteriorated and the bonding characteristics are deteriorated. Therefore, there is a problem that a carrier for protecting this is required and the cost of the semiconductor device is increased.

Further, at the time of mounting, the solder balls (solder balls) melted by the reflow device are crushed by the bonding pressure or the self-weight, the diameter of the solder balls is increased, and the solder balls protrude from the connection terminal area and other connection terminals or There is a risk that a solder bridge will be formed between the terminal lead, etc.,
There is a problem that it cannot be connected to a fine pattern with a narrow pitch.

The present invention has been made in view of the above circumstances, and is a semiconductor having a highly reliable connection structure that is easy to mount and handle even when connecting to a fine pattern with a narrow pitch. The purpose is to provide a device.

[0008]

In order to solve the problems, the present invention is characterized in that a conductive bonding material filled in a through hole formed in a specific region of a semiconductor device is heated to flow. And a conductor layer for dissociating and separating the conductive bonding material from the inner peripheral surface of the through hole is provided. That is, T in claim 1
The GA type semiconductor device has through holes arranged in a grid pattern in a specific region of the semiconductor element mounting substrate, the semiconductor elements are mounted on the upper surface side of the semiconductor element mounting substrate, and the periphery thereof is surrounded. TG formed with an electrical conduction circuit internally connected to the electrode terminals of the semiconductor element
In an A (through hole grid array) type semiconductor device, a conductor layer made of Ni or the like that easily dissociates a conductive bonding material is provided on the inner peripheral surface of the through hole, and the inside of the through hole is provided. The structure is characterized by being filled with a conductive bonding material such as cream solder that easily separates from the conductor layer.

[0009]

According to the TGA type semiconductor device of the first aspect of the present invention, the conductive bonding material filled in the through hole and the conductive bonding material are easily separated from the inner peripheral surface of the through hole. Since it is provided with a conductor layer capable of forming a conductive layer, by heating this, the conductive bonding material in an amount necessary for electrical coupling is transferred from the inner peripheral surface of the through hole to the connection terminal area of the mounting board. After detaching, the TGA type semiconductor device can be easily joined to the connection terminal of the mounting substrate. This makes it possible to cope with extremely high precision and fine pitch of the connection terminals of the mounting board.

Further, since it is not necessary to form a projection of a solder ball on the back surface side of the semiconductor device, and the manufacturing process of the semiconductor device is simplified, its mounting and its mounting are improved as compared with the prior art. It facilitates handling, significantly improves bonding characteristics, and significantly improves productivity.

Furthermore, the quality of the bonding between the semiconductor device and the mounting substrate can be confirmed by a simple visual inspection for confirming whether or not the conductive bonding material is separated from the upper surface side.

[0012]

Next, an embodiment of the present invention will be described with reference to the accompanying drawings.

Here, FIG. 1 shows a TG according to an embodiment of the present invention.
2 is a plan view showing an A-type semiconductor device, FIG. 2 is a cross-sectional view showing an outline of the configuration of a TGA type semiconductor device according to an embodiment of the present invention, and FIG. 3 is a through hole provided in the TGA type semiconductor device according to an embodiment of the present invention. 4 is a partial cross-sectional view showing the outline of the configuration of FIG. 4, and FIG. 4 is a cross-sectional view showing the outline of the mounted state of the semiconductor device according to the embodiment of the present invention.

First, as shown in FIGS. 1 and 2, a TGA type semiconductor device 10 according to an embodiment of the present invention is made of a quadrangular glass cloth epoxy resin, and is formed by a conventional method such as an additive method or a subtractive method. The semiconductor element 13 is mounted on the semiconductor element mounting layer 12 formed on the upper surface side of the semiconductor element mounting substrate 11 formed in step a.

One end of one of the electrode terminals 14 of the semiconductor element 13 and the other end of the terminal lead 16 of the conductor circuit pattern 15 formed on the upper surface of the substrate 11 are connected.
First, the bonding wire 17 is connected to form an electrical conduction circuit.

One ends of the semiconductor element 13, the bonding wire 17 and the conductor circuit pattern 15 are resin-sealed with a sealing resin.

Here, in the semiconductor device 10,
The conductor circuit pattern 15 formed on the upper surface side of the substrate 11 and the external connection pad 19 of the conductor wiring pattern 18 formed on the lower surface side of the board 11 are electrically connected to the inside along the outer edge of the board 11. Through holes 20 for connection are formed.

In addition, the through hole 20 is provided with the conductor layer 20b on the inner peripheral surface thereof, from which the conductive bonding material 25 can be easily separated, and inside thereof,
1 and 2 filled with the conductive bonding material 25.

As an example of implementation, the conductor layer 20b of the through hole 20 has a copper plating layer 21 and a nickel plating layer 22 laminated from the inner layer toward the surface layer. In addition, the conductive bonding material 25 filled in the inside is a cream solder 25 which is an example of the conductive bonding material 25.
a is filled by conventional means. Further, a cover coat 26 is formed on a required portion of the semiconductor element mounting substrate with a solder resist which is an example of an insulator.

Subsequently, in mounting the TGA type semiconductor device 10 according to one embodiment of the present invention, as shown in FIG.
By moving a transfer head (not shown) that holds the TGA type semiconductor device onto the bonding position of the bonding terminal 24 of the mounting board (PWB) 23, the TGA type semiconductor device corresponding to each of the bonding terminals is passed through. The hole 20 is positioned, and the transfer head is lowered to mount the TGA type semiconductor device 10 on the mounting substrate.

Next, when the mounting board 23 is carried into a reflow device (not shown) and heated, the cream solder 25 filling the inside of the through hole is melted and the fluidity is improved, and the cream solder 25 is melted. From the conductor layer 20b on the inner peripheral surface of the through hole by its own weight,
The mold semiconductor device 10 and the mounting board 23 are joined to complete the mounting.

Here, the bonding terminal 24 of the mounting substrate
If the mounting substrate on which the cream solder is thinly applied by the screen printing method is used, the bondability can be further improved. Further, in this configuration, since the amount of cream solder necessary for connection is released, the bonding solder is kept within the range of the bonding terminal 24 area and melted at the time of reflow, which occurred when mounting the BGA type semiconductor device of the related art. There is no possibility that the solder balls thus formed are crushed by the weight of the BGA type semiconductor device or the bonding pressure of the BGA type semiconductor device, and are squeezed out of the bonding terminal 24 area to form a solder bridge between the adjacent other bonding terminal 24 areas. This makes it possible to meet the demand for a narrower pitch between the terminal leads of the semiconductor device.

Although the present invention has been described above based on the embodiments, the present invention is not limited to these embodiments, and changes in design and the like without departing from the scope of the invention are included in the present application.

[0024]

As described above, the TG of the present invention
According to the A-type semiconductor device, the inner peripheral surface is provided with the conductor layer capable of easily releasing the conductive bonding material, and the through hole filled with the conductive bonding material is provided therein. As compared with the BGA type semiconductor device of the prior art, the formation of solder balls is unnecessary. As a result, the handling becomes easy, the production efficiency is remarkably improved, and the manufacturing cost can be reduced. Furthermore, it is possible to meet the demand for a narrower pitch of the terminal leads of the semiconductor device. Moreover, the connection state can be inspected by a simple device such as a camera without using a conventional expensive X-ray inspection device.

[Brief description of drawings]

FIG. 1 is a plan view showing a TGA type semiconductor device according to an embodiment of the invention.

FIG. 2 is a cross-sectional view showing the outline of the configuration of a TGA type semiconductor device according to an embodiment of the invention.

FIG. 3 is a partial cross-sectional view showing the outline of the configuration of through holes provided in the TGA type semiconductor device according to the embodiment of the invention.

FIG. 4 is a cross-sectional view showing an outline of a mounted state of a semiconductor device according to an example of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 TGA type semiconductor device 11 Semiconductor element substrate 12 Semiconductor element mounting layer 13 Semiconductor element 14 Electrode terminal of semiconductor element 15 Conductor circuit pattern 16 Terminal lead 17 Bonding wire 18 Conductor wiring pattern 19 External connection pad 20 Through hole 20a Through hole 20b Conductor layer 21 Copper Plating Layer 22 Nickel Plating Layer 23 Mounting Board (PWB) 24 Bonding Terminal 25 Conductive Bonding Material 25a Cream Solder 26 Cover Coat

Claims (1)

[Claims] 1. A through hole arranged in a grid pattern is arranged in a specific region of a semiconductor element mounting substrate, the semiconductor element is mounted on the upper surface side of the semiconductor element mounting substrate, and the periphery thereof is surrounded. A TGA (through hole grid array) type semiconductor device in which an electrical conduction circuit internally connected to an electrode terminal of the semiconductor element is formed,
A conductive layer made of Ni or the like that easily dissociates the conductive bonding material is provided on the inner peripheral surface of the through hole, and a conductive bonding material such as cream solder that easily separates from the conductive layer inside the through hole. And a TGA type semiconductor device manufacturing method.