JPH086230A - Phase shift mask, phase shift mask blank, and manufacturing method thereof - Google Patents

Abstract

(57) [Abstract] [PROBLEMS] To provide a phase shift mask and a phase shift mask blank that can be used for a stepper having a short wavelength light such as a KrF excimer laser as a light source, and a manufacturing method thereof. [Structure] According to the present invention, an etching stopper layer (14) and chromium to which tungsten is added are formed on a transparent substrate (11) (the weight ratio is 90 to 98% for chromium and 2 for tungsten).
-10%) or tantalum-added chromium (polymerization ratio: 90-98% chromium, 2-10% tantalum) for a light-shielding layer (12), a phase shift layer (13) for a silicon oxide. Are provided in order, a phase shift mask formed by patterning the phase shift layer optical layer (13) and the light shielding layer (12), and a method for manufacturing them.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase shift mask and a phase shift mask blank. More specifically, the present invention relates to a phase shift mask which can be used in a stepper using a short wavelength light such as KrF excimer laser (wavelength 248 nm) as a light source. And a phase shift mask blank and a manufacturing method thereof.

[0002]

2. Description of the Related Art In a conventional photomask, there has been a problem that light leaking from a transparent portion of a mask interferes with each other in adjacent patterns, resulting in poor resolution. Therefore, a phase shift mask using a phase shift technique for reversing the phase of projection light transmitted through an adjacent pattern by 180 degrees and improving the resolution of a fine pattern has been developed and attracted attention.
That is, in the phase shift mask, the phase shift portion is provided on one side of the adjacent openings, so that when the transmitted lights interfere with each other, the light intensities at the boundaries are weakened to each other because the phases are inverted. As a result, the transfer pattern is separated and resolved. Since this relationship holds before and after the focus, the resolution is improved and the depth of focus is improved as compared with the conventional method even if the focus is slightly deviated.

As a conventional phase shift mask, it is known that an etching stopper layer, a phase shift layer and a light shielding layer are provided on a transparent glass substrate, and Al ₂ O ₃ and SnO are used as the etching stopper layer. ₂ or the like, SiO _2, SOG or the like in the phase shift layer, the light-shielding layer chromium oxide or chromium, made of a material of chromium based, such as nitrides have been used.

On the other hand, in the manufacture of semiconductor devices such as ICs and LSIs, steppers are used for reducing projection exposure of a pattern of a photomask generally called a reticle onto a silicon wafer. Conventionally, the stepper light source is g Lines (wavelength 436 nm) or i-lines in the ultraviolet range (wavelength 365 nm) were used. However, with the recent remarkable increase in the density of semiconductor elements, further miniaturization of patterns is required, and the light source of the stepper has a shorter wavelength than the conventional one, for example, a KrF excimer laser (wavelength 248 nm). Alternatively, the use of ArF excimer laser (wavelength 193 nm) or the like has been studied.

[0005]

However, the conventional phase shift mask using the above-mentioned material of chromium or an oxide or nitride of chromium as the light-shielding layer causes irradiation damage depending on the energy of KrF excimer laser light. There is a problem that the pattern is generated and deteriorates. This is because the laser light has higher energy than the g-line or i-line.

Therefore, a conventional phase shift mask using the above-mentioned material of chromium or an oxide or nitride of chromium for the light-shielding layer is used as a stepper using an excimer laser as a light source represented by the use of KrF or ArF. There was a problem that could not be used.

Therefore, the present invention has been made in order to improve the above-mentioned conventional problems, and when used in a stepper having a short wavelength light such as a KrF excimer laser as a light source, a phase shift mask having improved irradiation resistance and An object of the present invention is to provide a phase shift mask blank and a manufacturing method thereof.

[0008]

In order to achieve the above-mentioned object, the present invention provides a light-shielding film comprising a transparent substrate (11), an etching stopper layer (14), chromium containing tungsten or chromium containing tantalum. Layer (12),
A phase shift layer (13) made of silicon oxide is sequentially provided, and the phase shift layer (13) and the light shielding layer (12) are provided.
Is a pattern shift mask.

An etching stopper layer (14) is provided on the transparent substrate (11), and a patterned phase shift layer (13) is formed on the etching stopper layer (14).
a), and a patterned light-shielding layer (12a) made of chromium containing tungsten or chromium containing tantalum is provided on the phase shift layer (13a). is there.

On the transparent substrate (11), a patterned light-shielding layer (12a) made of chromium to which tungsten is added or chromium to which tantalum is added is provided, and the transparent substrate (11) between the light-shielding layer patterns is formed. The phase shift mask is characterized in that a transparent substrate pattern (11a) is provided by engraving by etching.

An etching stopper layer (14) is provided on the transparent substrate (11), and a phase shift layer (13) made of silicon oxide is provided on the etching stopper layer (14). On top of the shift layer (13),
A phase shift mask blank comprising a light-shielding layer (12) made of chromium to which tungsten is added or chromium to which tantalum is added.

Further, an etching stopper layer (14) is formed on the transparent substrate (11) by a sputtering method, and on the etching stopper layer (14), chromium containing tungsten or chromium containing tantalum is formed. A light shielding layer (12) is formed, a phase shift layer (13) made of silicon oxide is further formed by a sputtering method, and the phase shift layer (13) and the light shielding layer (12) are patterned by etching. This is a method of manufacturing a phase shift mask.

An etching stopper layer (14) and a phase shift layer (13) made of silicon oxide are sequentially formed on the transparent substrate (11) by a sputtering method, and the phase shift layer (13) is formed on the phase shift layer (13). A light-shielding layer (12) made of chromium to which tungsten is added or chromium to which tantalum is added, and the light-shielding layer (12) and the phase shift layer (13) are patterned by etching. It is a method of manufacturing a shift mask.

Further, an etching stopper layer (14) and a phase shift layer (13) are sequentially provided on a transparent substrate (11) by a sputtering method, and a light-shielding layer (chromium containing tungsten or chromium containing tantalum) ( 12) The phase shift mask blank provided with 12).

The weight ratio of chromium added with tungsten, which is the material of the light shielding layer (12), is 90% of chromium.
˜98%, tungsten is 2˜10%, and the polymerization ratio of tantalum-added chromium is 90˜98.
%, Tantalum is 2 to 10%, which is a phase shift mask.

Further, the method of manufacturing a phase shift mask blank is characterized in that the light shielding layer (12) is formed by a sputtering method.

Further, the method of manufacturing a phase shift mask blank is characterized in that the light shielding layer (12) made of chromium to which tungsten is added is formed by a sputtering method using chromium to which tungsten is added as a target.

Further, the method for producing a phase shift mask blank is characterized in that the light shielding layer (12) made of chromium to which tantalum is added is formed by a sputtering method while targeting chromium to which tantalum is added.

The structure of the present invention will be described in more detail below.

1, 2, and 3 are sectional views showing the structure of the phase shift mask of the present invention. As shown in FIG. 1, on the transparent substrate (11), an etching stopper layer (14),
The light shielding layer pattern (12a) is provided in this order, and the phase shift pattern (13a) is formed thereon.

FIG. 2 is a sectional view showing the structure of a phase shift mask according to another embodiment of the present invention. Transparent substrate (1
1) An etching stopper layer (14), a phase shift pattern (13a), and a light shielding layer pattern (12a) are provided in this order on top of the above.

FIG. 3 is a sectional view showing the structure of a phase shift mask according to another embodiment of the present invention. Transparent substrate (1
1) A light shielding layer pattern (12a) is provided on the transparent substrate pattern (11a), and the transparent substrate (11) between adjacent light shielding layer patterns is engraved to form a transparent substrate pattern (11a).

Here, the transparent substrate (11) can be made of the same material as that of the conventional phase shift mask, and can be used for irradiating short wavelength light such as synthetic quartz, calcium fluoride, magnesium fluoride, etc. It is made of an arbitrary transparent material, and its thickness is not particularly limited, but usually 2.
It is about 3 mm (0.09 inch) to 6.35 mm (0.25 inch).

The weight ratio of chromium added with tungsten, which is the material of the light shielding layer (12), is 90 to 90% for chromium.
98%, 2 to 10% tungsten, and the weight ratio of chromium with tantalum added is 90 to 98% chromium.
%, Tantalum is 2 to 10%. The weight ratios of chromium and tungsten and chromium and tantalum can be appropriately combined within the above numerical range. The thickness of the light shielding layer (12) is 50 nm or more,
It is preferably about 80 to 150 nm. The thickness is not necessarily limited to this range, but it is not usually used for the following reason. That is, if the thickness is less than 50 nm, defects such as uneven thickness and pinholes are likely to occur during film formation.
In addition, sufficient light blocking effect cannot be obtained. However, if the above defects can be overcome by improving the film forming technique, etc., the light shielding layer (1
There is no problem even if the thickness of 2) is less than 50 nm. on the other hand,
When the thickness is thicker than 150 nm, the film formation time and the etching time become long, and further, it becomes difficult to perform patterning at the time of etching. However, if the above defects can be overcome by improving the film formation technology and the etching technology, even if the thickness is larger than 150 nm. There is no hindrance.

To form the light shielding layer (12), a sputtering method can be adopted. Specifically, using a chromium target to which tungsten is added, sputtering is performed mainly in an argon gas atmosphere under predetermined condition settings.

Further, as in the above case, sputtering is performed mainly in an argon gas atmosphere by setting a predetermined condition using a chromium target to which tantalum is added.

The range of the weight ratio of the additive tungsten or tantalum is preferably 2 to 10%. Two
If it is less than%, the resistance to short wavelength light is not improved, and irradiation damage occurs and the pattern deteriorates. 10% again
If it exceeds the range, the etching rate decreases and it becomes difficult to form a pattern.

Next, the phase shift layer (13) is usually S
iO ₂ or the like is used. The phase shift layer (13) is for reversing the phase of the transmitted light by 180 degrees. For that purpose, the thin film of the phase shift layer (13) has a transmitted light of 180 degrees with respect to the transparent substrate (11). It must be set to have a phase. The condition at this time is represented by d = λ / {2 (n-1)}, where n is the refractive index of the phase shift layer, λ is the exposure light source wavelength, and d is the film thickness of the phase shift layer. Specifically, n is 1.5 (SiO ₂ ) and λ is 248n.
When m, the thickness of the phase shift layer is about 250 nm.

Next, the etching stopper layer (14)
Is for literally preventing the underlying transparent substrate (11) from being etched when the phase shift layer (13) is etched, and silicon nitride or carbide is used. In particular, since silicon carbide has conductivity, it is possible to prevent a charge-up phenomenon at the time of electron beam writing at the time of manufacturing a phase shift mask. The thickness of the etching stopper layer (14) is not particularly limited, but if it is too thin, it is difficult to prevent the progress of etching, while if it is as thin as possible, the film formation time is short and the transparency is high. Therefore, a thickness of about 5 to 20 nm is desirable.

As a method for forming the thin films of the phase shift layer (13) and the etching stopper layer (14) on the transparent substrate (11), a sputtering method, an ion plating method, a vacuum deposition method, a CVD method. Although a conventionally known method such as the above can be arbitrarily adopted, the sputtering method is particularly desirable from the viewpoint of ease of use.

Next, an example of a method of manufacturing a phase shift mask using the phase shift mask blank having the structure shown in FIG. 4 will be described with reference to FIGS.

After cleaning the surface of the phase shift mask blank as necessary, a photosensitive resin is applied by using a spinner or the like to form an electron beam positive resist layer (15), and after baking, a predetermined pattern is formed. Exposure (17) (FIG. 6)
(See (a)).

After the exposure, a predetermined developing process is performed to remove the resist layer in the exposed portion to form a resist pattern (15a) (see FIG. 6 (b)).

Next, after the baking treatment, the light shielding layer (12) is partially removed by etching using the resist pattern (15a) as a mask to partially remove the light shielding layer pattern (12a).
Are formed (see FIG. 6C). The etching method may be either a wet etching method or a dry etching method, but dry etching is preferable in terms of high accuracy.

After that, the remaining resist pattern (15a) is removed (see FIG. 6D).

Next, the phase shift layer (13) is formed by sputtering. Further, the electron beam negative resist (16) is applied again, and a predetermined pattern exposure (17) is performed (see FIG. 6E). Here, the electron beam negative type resist is used for convenience, but an electron beam positive type resist may be used unless the portion to be drawn is inverted.

After the exposure, a predetermined developing process is performed to remove the resist layer in the unexposed portion, and the resist pattern (16a) is formed.
Are formed (see FIG. 6F).

Next, after the baking treatment, the phase shift layer (13) is partially removed by etching using the resist pattern (16a) as a mask to form a phase shift pattern (13a) (FIG. 6 (g)). reference). Since the etching stopper layer (14) is below the phase shift layer (13), the etching end point of the phase shift layer (13) can be detected. As the etching method, a dry etching method is used.

Thereafter, the remaining resist pattern (16a) is removed (see FIG. 6H), and the phase shift mask shown in FIG. 1 is obtained.

Next, a method of manufacturing the phase shift mask having the structure shown in FIG. 2 will be described with reference to FIGS.

First, an etching stopper layer (14), a phase shift layer (13) and a light-shielding layer (12) are sequentially formed on a transparent substrate (11), and patterning is performed by the lithography method as in the above. A light shielding pattern (12a) is formed by partially removing the light shielding layer (12) (see FIGS. 7A to 7C).

Then, the remaining resist pattern (15a) is removed (see FIG. 7D).

Then, the electron beam negative resist (1
6) is applied and baked, and then a predetermined pattern exposure is performed, and a predetermined development process is performed to form a resist pattern (16
a) is formed (see FIGS. 7E and 7F).

After the baking treatment, the resist pattern (16
Etching is performed using a) as a mask to partially remove the phase shift layer (13) to remove the phase shift pattern (13).
a) is formed (see FIG. 7G), and finally the resist pattern (16a) is removed (see FIG. 7H) to obtain the phase shift mask shown in FIG.

Next, a method of manufacturing the phase shift mask having the structure shown in FIG. 3 will be described with reference to FIGS.

First, a light-shielding layer (1
2) is deposited, and patterning is performed by the lithographic method in the same manner as above to form a light shielding layer pattern (12a) in which the light shielding layer (12) is partially removed (FIG. 8A).
(See (c)). Then, the remaining resist pattern (15a) is removed (see FIG. 8D).

Then, the electron beam negative resist (1
6) is applied, and after baking, a predetermined pattern exposure (17)
(See FIG. 8 (e)), a predetermined developing process is performed,
A resist pattern (16a) is formed (see FIG. 8F).

After the baking treatment, the resist pattern (16
Etching is performed using a) as a mask, and the transparent substrate (1
1) Engrave the transparent substrate pattern (1
1a) is formed (see FIG. 8 (g)).

Finally, the resist pattern (16a) is removed to complete the phase shift mask shown in FIG. 3 (FIG. 8).
(See (h)).

[0050]

In the phase shift mask of the present invention, since the light shielding layer (12) made of chromium to which tungsten or tantalum is added is used, it is thermally stable. Of the excimer laser beam can be improved and the irradiation resistance to the excimer laser light can be improved.

[0051]

EXAMPLES The present invention will be described in more detail below with reference to examples.

<Example 1> First, on a cleaned quartz substrate for a photomask, CH ₄ gas was added at 20 SC in a RF magnetron sputtering apparatus using a silicon target.
A CM flow was performed and sputtering was performed with a power of 100 W to form a silicon carbide film of about 10 nm thick as an etching stopper layer. The back pressure at this time is 2.0 × 10 -4 P
The sputtering pressure was 2.0 × 10 -1 Pa. Subsequently, the shutter was closed, argon gas was flowed at 20 SCCM, and pre-sputtering was sufficiently performed at a power of 100 W, then argon gas was stopped, the shutter was opened, oxygen gas was flowed at 20 SCCM, and sputtering was performed at a power of 1 Kw to form a phase shift layer. A SiO ₂ film having a thickness of about 250 nm was formed on the etching stopper layer. The sputtering pressure at this time was 2.0 × 10 -1 Pa.

Next, the shutter was closed, argon gas was flowed at 20 SCCM, pre-sputtering was sufficiently performed with a power of 100 w, the shutter was opened, and chromium was added to the target (chromium was 95%).
%, Tungsten 5%), and argon gas flow rate 1
0SCCM, power 800w, sputtering pressure 6.0 × 10
A light-shielding layer was formed to a thickness of about 100 nm under the condition of -1 Pa.

<Evaluation> As shown in FIG. 9, a KrF excimer laser beam (19) was applied to the phase shift mask blank (2).
1) was irradiated and the irradiation resistance of the light shielding layer was evaluated. The laser light was applied for 100 pulses.

Further, by using the evaluation method of FIG. 9, the phase shift mask blank of the present invention was changed in color by the method and the conventional phase shift mask blank was changed in color by the laser light intensity of KrF.
No color change was observed when irradiated with excimer laser light.

Further, the intensity of the laser beam was increased and the phase shift mask blank of the present invention was irradiated with the excimer laser beam.
The color changed with a laser light intensity of 5 times.

Next, the pulse number of the laser light was increased, and the conventional phase shift mask blank was irradiated with 10,000 pulses of KrF excimer laser light, and the intensity of the laser light that changed color was examined.

When the phase shift mask blank of the present invention was irradiated with KrF excimer laser light with the same laser light intensity, no discoloration was observed.

Further, when the intensity of the laser beam was increased and the excimer laser beam was applied to the phase shift mask blank of the present invention, 1.
The color changed with a laser light intensity of 6 times.

<Embodiment 2> First, on a cleaned quartz substrate for a photomask, CH ₄ gas of 20 SC was used with a silicon target in an RF magnetron sputtering device.
A CM flow was performed and sputtering was performed with a power of 100 w to form a silicon carbide film of about 10 nm thick as an etching stopper layer. The back pressure at this time is 2.0 × 10 -4 P
The sputtering pressure was 2.0 × 10 -1 Pa. Subsequently, the shutter was closed, argon gas was flowed at 20 SCCM, pre-sputtering was sufficiently performed with a power of 100 w, the argon gas was stopped, the shutter was opened, and chromium was added to the target (compounding ratio: 95% chromium, tungsten Of 5%), a light-shielding layer having a thickness of about 100 nm was formed under the conditions of an argon gas flow rate of 10 SCCM, a DC power of about 800 w, and a pressure during sputtering discharge of about 6 × 10 -1 Pa.

Subsequently, an electron beam positive type resist (electron beam resist AZ-5206 manufactured by Hoechst Japan Co., Ltd.) was spinner coated to a thickness of about 500 nm on the surface of the mask blank, and a hot plate set at 90 ° C. was used for coating. Prebaking was performed for 30 minutes.

Next, an electron beam drawing apparatus (HL700S
Using Hitachi, Ltd., acceleration voltage of 20KV,
At a dose of about 4 × 10-5C / cm ² was given pattern drawing.

After drawing, a predetermined developing process is performed to remove the resist layer in the exposed portion to obtain a resist pattern, and then 9
Post baking was performed for about 30 minutes on a hot plate set at 0 ° C.

Next, the mask blank on which this resist pattern is formed is set in a parallel plate type plasma etching apparatus (hereinafter abbreviated as RIE), and a pressure of about 2 Pa and 30 is applied.
The light-shielding layer was dry-etched using high-frequency power of 0w.

After completion of the etching, the resist layer that remained was immersed in methyl ethyl ketone and stirred to remove the remaining resist layer.
After cleaning and drying, the RF magnetron sputtering device was used to remove oxygen gas by using a silicon target.
Flowing at 0 SCCM and performing sputtering with a power of 1 Kw, a SiO ₂ film having a thickness of about 250 nm was formed as a phase shift layer on the mask blank. In addition, electron beam negative resist (electron beam resist CMS manufactured by Tosoh Corporation)
-EX) was applied to about 500 nm and baked.
Then, a predetermined pattern was drawn by the electron beam drawing apparatus, and development and post-baking were performed to obtain a resist pattern.

Next, by using RIE, CF ₄ gas is added to 50
The SCCM and H ₂ gas were caused to flow at 5 SCCM, and the phase shift layer was etched at a gas pressure of about 4 Pa and a power of 300 w for several minutes. At this time, a carbon peak began to appear on the RIE monitor when the etching of the phase shift layer was completed, so RIE was stopped and the substrate was taken out from the chamber.

After the etching was completed, the remaining resist layer was removed with a solvent, washed and dried to obtain a phase shift mask having the structure shown in FIG.

Using the obtained phase shift mask,
When reduction projection exposure was performed on a silicon wafer with a stepper using a KrF excimer laser as a light source, a highly accurate fine pattern could be formed on the silicon wafer.

<Evaluation> Furthermore, this phase shift mask is
When the same excimer laser irradiation resistance evaluation as in Example 1 was performed, the same resistance as in Example 1 could be obtained.

Example 3 An electron beam positive resist was applied to the surface of the phase shift mask blank obtained in Example 1 and baked. Then, a predetermined pattern was drawn using the electron beam drawing apparatus. After drawing, a predetermined developing process was performed, the resist layer in the exposed portion was removed to obtain a resist pattern, and a baking process was performed.

Further, the light shielding layer was etched by RIE in the same manner as in Example 2, and the remaining resist layer was removed with a solvent. After washing and drying, an electron beam positive resist was applied again and a baking treatment was performed. Then, a predetermined overlay pattern was drawn by the electron beam drawing apparatus, and after development and post-baking, the phase shift layer was etched in the same manner as described above.

After the etching was completed, the remaining resist layer was removed with a solvent, washed and dried to obtain a phase shift mask having a structure as shown in FIG.

Using the obtained phase shift mask,
When reduction projection exposure was performed on a silicon wafer with a stepper using a KrF excimer laser as a light source, a highly accurate fine pattern could be formed on the silicon wafer.

<Evaluation> Furthermore, this phase shift mask is
When the same excimer laser irradiation resistance evaluation as in Example 1 was performed, the same resistance as in Example 1 could be obtained.

Example 4 First, on a cleaned quartz substrate for a photomask, chromium was added to the target by using an RF magnetron sputtering apparatus (chromium was 95% by weight, and tungsten was 5% by weight). ), Argon gas flow rate 10 SCCM, DC power about 8
A light-shielding layer having a thickness of about 100 nm was formed under the conditions of 00w and the pressure during sputtering discharge of about 6 × 10 −1 Pa. As a result, a phase shift mask blank as shown in FIG. 5 is obtained.

On the surface of the obtained photomask blank,
An electron beam positive resist was applied, baking, pattern drawing, development and post baking were performed, and the light shielding layer was etched.

After the etching is completed, the remaining resist layer is removed with a solvent, washed and dried, and then, again.
An electron beam negative resist was applied and baked.
Next, a predetermined pattern was drawn, and after development and post-baking treatment, the quartz substrate was etched by RIE to a depth of about 250 nm. After that, the remaining resist layer was removed with a solvent, washed and dried to obtain a phase shift mask having a structure as shown in FIG.

Using the obtained phase shift mask,
When reduction projection exposure was performed on a silicon wafer with a stepper using a KrF excimer laser as a light source, a highly accurate fine pattern could be formed on the silicon wafer.

<Evaluation> Furthermore, this phase shift mask is
When the same excimer laser irradiation resistance evaluation as in Example 1 was performed, the same resistance as in Example 1 could be obtained.

[0080]

According to the present invention, the resistance to excimer laser light is remarkably improved by using the phase shift mask blank including the light shielding layer in which tungsten or tantalum is added to chromium. Further, by using a phase shift mask composed of a light-shielding layer in which tungsten or tantalum is added to chromium, the resistance to excimer laser light is improved, so that it can be used as a phase shift mask compatible with an exposure apparatus using an excimer laser as a light source. Became possible. As a result, it becomes possible to form an even higher precision fine pattern.

[0081]

[Brief description of drawings]

FIG. 1 is a sectional view of a phase shift mask according to an embodiment of the present invention.

FIG. 2 is a sectional view of a phase shift mask according to another embodiment of the present invention.

FIG. 3 is a sectional view of a phase shift mask according to another embodiment of the present invention.

FIG. 4 is a sectional view showing a structure of a phase shift mask blank according to an embodiment of the present invention.

FIG. 5 is a sectional view showing the structure of a phase shift mask blank according to another embodiment of the present invention.

6A to 6H are explanatory views showing a method for manufacturing a phase shift mask of the present invention.

7 (a) to 7 (h) are explanatory views showing a method for manufacturing the phase shift mask of the present invention.

8A to 8H are explanatory views showing a method for manufacturing a phase shift mask of the present invention.

FIG. 9 is an explanatory diagram showing an irradiation resistance evaluation method of a phase shift mask blank.

FIG. 10 is a sectional view showing an example of a conventional phase shift mask.

[Explanation of symbols]

11 ... Transparent substrate 11a ... Transparent substrate pattern 12 ... Light shielding layer 12a ... Light shielding layer pattern 13 ... Phase shift layer 13a ... Phase shift pattern 14 ... Etching stopper layer 15 ... Electron beam positive resist 15a ... Resist pattern 16 ... Electron beam negative type Resist 16a ... Resist pattern 17 ... Electron beam exposure 18 ... Excimer laser 19 ... Excimer laser light 20 ... Condensing lens 21 ... Phase shift mask blank or phase shift mask 22 ... Conventional light-shielding layer

Claims (17)

[Claims] 1. An etching stopper layer on a transparent substrate,
A phase shift mask comprising a light-shielding layer made of chromium added with tungsten or chromium added with tantalum, a phase shift layer made of silicon oxide, which are sequentially provided, and the phase shift layer and the light-shielding layer are patterned respectively. . 2. An etching stopper layer on a transparent substrate,
A phase shift mask comprising a phase shift layer made of silicon oxide, a light shielding layer made of chromium containing tungsten or chromium containing tantalum, which are sequentially provided, and the light shielding layer and the phase shift layer are patterned respectively. . 3. A phase shift mask characterized in that a patterned light-shielding layer made of chromium to which tungsten is added or chromium to which tantalum is added is provided on a transparent substrate, and the transparent substrate between the light-shielding layer patterns is engraved. . 4. The weight ratio of chromium added with tungsten, which is a material of the light shielding layer, is such that chromium is 90 to 98% and tungsten is 2 to 10%. The described phase shift mask. 5. The weight ratio of chromium to which tantalum, which is a material of the light shielding layer, is added is such that chromium is 90 to 98% and tantalum is 2 to 10%. The described phase shift mask. 6. An etching stopper layer is provided on a transparent substrate, a phase shift layer made of silicon oxide is provided on the etching stopper layer, and chromium or tantalum to which tungsten is added is provided on the phase shift layer. A phase shift mask blank comprising a light-shielding layer made of chrome added with chromium. 7. The phase shift according to claim 6, wherein the weight ratio of chromium added with tungsten, which is a material of the light shielding layer, is 90 to 98% for chromium and 2 to 10% for tungsten. Mask blank. 8. The phase shift according to claim 6, wherein the weight ratio of chromium added with tantalum, which is a material of the light shielding layer, is 90 to 98% for chromium and 2 to 10% for tantalum. Mask blank. 9. An etching stopper layer is formed on a transparent substrate by a sputtering method, a light-shielding layer made of chromium containing tungsten or chromium containing tantalum is formed on the etching stopper layer, and further oxidation of silicon is performed. A method of manufacturing a phase shift mask, comprising forming a phase shift layer made of a material by a sputtering method, and patterning the phase shift layer and the light shielding layer by etching. 10. An etching stopper layer and a phase shift layer made of silicon oxide are sequentially formed on a transparent substrate by a sputtering method, and on the phase shift layer,
A method for manufacturing a phase shift mask, comprising forming a light shielding layer made of chromium to which tungsten is added or chromium to which tantalum is added, and patterning the light shielding layer and the phase shift layer by etching. 11. The weight ratio of chromium added with tungsten, which is a material of the light shielding layer, is 90 to 98% of chromium,
The method for manufacturing a phase shift mask according to claim 9 or 10, wherein the content of tungsten is 2 to 10%. 12. The weight ratio of chromium to which tantalum, which is a material of the light-shielding layer, is added is 90 to 98% for chromium and 2 to 10% for tantalum. A method for manufacturing the described phase shift mask. 13. The manufacturing of a phase shift mask according to claim 9, wherein the light shielding layer is formed by a sputtering method, using the tungsten added chromium or the tantalum added chromium as a target. Method. 14. A phase characterized in that an etching stopper layer and a phase shift layer are sequentially formed on a transparent substrate by a sputtering method, and a light shielding layer made of chromium to which tungsten is added or chromium to which tantalum is added is formed. Manufacturing method of shift mask blank. 15. The weight ratio of chromium added with tungsten, which is a material of the light shielding layer, is 90 to 98% of chromium,
The method for manufacturing a phase shift mask blank according to claim 14, wherein the content of tungsten is 2 to 10%. 16. The phase shift according to claim 14, wherein the weight ratio of chromium added with tantalum, which is a material of the light shielding layer, is 90 to 98% for chromium and 2 to 10% for tantalum. Mask blank manufacturing method. 17. The phase shift mask blank according to claim 14, wherein the light-shielding layer is formed by a sputtering method using chromium containing tungsten or chromium containing tantalum as a target. Production method.