JPH0862402A - Antireflection coating and manufacture thereof - Google Patents
Antireflection coating and manufacture thereofInfo
- Publication number
- JPH0862402A JPH0862402A JP6224179A JP22417994A JPH0862402A JP H0862402 A JPH0862402 A JP H0862402A JP 6224179 A JP6224179 A JP 6224179A JP 22417994 A JP22417994 A JP 22417994A JP H0862402 A JPH0862402 A JP H0862402A
- Authority
- JP
- Japan
- Prior art keywords
- target
- refractive index
- sio
- fluoride
- mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000011248 coating agent Substances 0.000 title abstract 4
- 238000000576 coating method Methods 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000010410 layer Substances 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000002356 single layer Substances 0.000 abstract description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 abstract 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 abstract 1
- 229910001637 strontium fluoride Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000032900 absorption of visible light Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光学部品に用いられる
反射防止膜およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antireflection film used for optical parts and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、基板を加熱することなく優れた膜
の密着性を得られることや、自動化の容易さといった利
点から、スパッタリング法による光学薄膜形成の技術が
注目されている。ところが、真空蒸着法の場合に低屈折
率材料として最も一般的に用いられているＭｇＦ2 は、
スパッタリングを行うことによりフッ素が解離し可視光
の吸収が生じるため、使用することができない。そのた
め、ＳｉＯ2 あるいはＳｉＯ2 と他の物質との混合物を
用いることが検討されている。例えば、特開平２−９６
７０１号公報には、低屈折率材料にＳｉＯ2 、ＳｉＯ2
とアルミナ（Ａｌ2 Ｏ3 ）との混合物、またはＳｉＯ2
を主成分とする物質を用い、高屈折率材料にＴｉＯ2 ，
Ｔａ2 Ｏ5 ，ＺｒＯ2 ，Ｉｎ2 Ｏ3 ，ＳｎＯ2 ，Ｎｂ2
Ｏ5 もしくはＹｂ2 Ｏ3 またはこれらの混合物を用い
て、透明基板上に前記高屈折率材料と前記低屈折率材料
をスパッタリングにより交互に積層することにより反射
防止膜を得ることが開示されている。2. Description of the Related Art In recent years, a technique for forming an optical thin film by a sputtering method has attracted attention because of its advantages such as excellent film adhesion without heating the substrate and easiness of automation. However, in the case of the vacuum deposition method, MgF 2 which is most commonly used as a low refractive index material is
Fluorine is dissociated by the sputtering and absorption of visible light occurs, so that it cannot be used. Therefore, it is considered to use SiO 2 or a mixture of SiO 2 and another substance. For example, JP-A-2-96
No. 701 discloses that low refractive index materials include SiO 2 and SiO 2.
Of alumina and alumina (Al 2 O 3 ) or SiO 2
Is used as a high refractive index material, and TiO 2 ,
Ta 2 O 5 , ZrO 2 , In 2 O 3 , SnO 2 , Nb 2
It is disclosed that an antireflection film is obtained by alternately stacking the high refractive index material and the low refractive index material on a transparent substrate by sputtering using O 5 or Yb 2 O 3 or a mixture thereof. .
【０００３】[0003]
【発明が解決しようとする課題】しかし、ＳｉＯ2 の屈
折率は１．４６程度であり、ＭｇＦ2 （屈折率１．３
８）と比較して高いため、反射防止膜に用いる場合に、
単層のみでは充分な反射防止効果を得られない。そのた
め、２層以上の膜構成としなければ実用的な反射防止効
果を得られず、さらに、得られた反射防止効果も充分と
はいえない。また、偏光ビームスプリッターやエッジフ
ィルター等を構成する場合には、高屈折率と低屈折率と
の屈折率差が大きいほうが望ましいが、低屈折率として
ＳｉＯ2 を使うと充分な特性を得られなかったり、層数
が増えてコストアップにつながる等の問題が生じる。However, the refractive index of SiO 2 is about 1.46, and MgF 2 (refractive index 1.3
Since it is higher than that of 8), when used for an antireflection film,
A single layer alone cannot provide a sufficient antireflection effect. Therefore, a practical antireflection effect cannot be obtained unless the film structure has two or more layers, and the obtained antireflection effect is not sufficient. Further, when constructing a polarization beam splitter, an edge filter, or the like, it is desirable that the difference in refractive index between the high refractive index and the low refractive index is large, but if SiO2 is used as the low refractive index, sufficient characteristics may not be obtained. However, there is a problem that the number of layers increases and the cost increases.
【０００４】本発明は、かかる従来の問題点に鑑みてな
されたもので、請求項１に係る発明は、充分な光学特性
を有する反射防止膜を製造するのに適した製造方法を提
供することを目的とする。請求項２に係る発明は、充分
な光学特性を有する反射防止膜を提供することを目的と
する。The present invention has been made in view of the above conventional problems, and the invention according to claim 1 provides a manufacturing method suitable for manufacturing an antireflection film having sufficient optical characteristics. With the goal. An object of the invention according to claim 2 is to provide an antireflection film having sufficient optical characteristics.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、請求項１に係る発明は、フッ化物とＳｉＯ2 との混
合物でターゲットを構成し、このターゲットをスパッタ
リングすることにより反射防止膜を形成することとし
た。請求項２に係る発明は、上記フッ化物がＣａＦ2 ，
ＬｉＦ，ＳｒＦ2 ，Ｎａ3ＡｌＦ6 またはＮａ5 Ａｌ3
Ｆ14からなり、請求項１記載の製造方法により成膜した
層を少なくとも１層設けた反射防止膜である。In order to solve the above-mentioned problems, the invention according to claim 1 constitutes a target with a mixture of fluoride and SiO 2 and forms an antireflection film by sputtering this target. It was decided to form. In the invention according to claim 2, the fluoride is CaF 2 ,
LiF, SrF 2 , Na 3 AlF 6 or Na 5 Al 3
An antireflection film comprising F 14 and provided with at least one layer formed by the manufacturing method according to claim 1.
【０００６】[0006]
【作用】ＳｉＯ2 より屈折率の低いフッ化物（Ｃａ
Ｆ2 ，ＬｉＦ，ＳｒＦ2 ，Ｎａ3 ＡｌＦ6 ，Ｎａ5 Ａｌ
3 Ｆ14）にＳｉＯ2 を混合したターゲットをスパッタリ
ングすることにより、フッ素の解離が抑制され吸収の極
めて少ない膜を容易に得ることを、鋭意研究の結果、見
い出した。また、ＳｉＯ2 の割合は、１重量％以上あれ
ば著しい効果が認められるが、特に制限するものではな
い。一方、ＳｉＯ2 を加えることにより一般的に屈折率
は上昇してしまうため、必要量以上に混合するのは光学
特性の点からあまり望ましいことではない。なお、ター
ゲット中の混合物は化学的に結合した状態となっていて
も良いし、単なる混合状態でも良い。[Function] Fluoride (Ca, which has a lower refractive index than SiO 2
F 2 , LiF, SrF 2 , Na 3 AlF 6 , Na 5 Al
As a result of earnest research, it has been found that a film in which fluorine dissociation is suppressed and absorption is extremely small can be easily obtained by sputtering a target in which 3 F 14 ) is mixed with SiO 2 . Further, if the proportion of SiO 2 is 1% by weight or more, a remarkable effect is recognized, but it is not particularly limited. On the other hand, since the refractive index is generally increased by adding SiO 2 , it is not desirable from the viewpoint of optical characteristics to mix more than necessary amount. The mixture in the target may be in a chemically bound state or may be a simple mixed state.
【０００７】以上のような方法により形成した膜の屈折
率は、混合物の添加量や成膜条件にもよるが、おおよそ
１．３６から１．４３程度とＳｉＯ2 に比べて低い。し
たがって、単層のみでも充分な反射防止効果を得ること
ができ、また、偏光ビームスプリッターやエッジフィル
ター等を構成する場合にも少ない層数で充分な特性を得
ることができる。The refractive index of the film formed by the above method is about 1.36 to 1.43, which is lower than that of SiO 2 , though it depends on the amount of the mixture added and the film forming conditions. Therefore, a sufficient antireflection effect can be obtained even with only a single layer, and sufficient characteristics can be obtained with a small number of layers even when configuring a polarization beam splitter, an edge filter, or the like.
【０００８】[0008]
［実施例１］屈折率１．７５のガラス基板を真空槽にセ
ットし、２×１０-4Ｐａまで排気した後、分圧が０．３
ＰａのＡｒガスを真空槽に導入した。基板加熱は行わ
ず、ターゲットは、ＬｉＦとＳｉＯ2 を重量比で８：２
に混合したものを使用した。高周波マグネトロンスパッ
タリング法を用い、投入電力１００Ｗとして表１の膜厚
で成膜を行い、反射防止膜を得た。Example 1 A glass substrate having a refractive index of 1.75 was set in a vacuum chamber and evacuated to 2 × 10 −4 Pa, and then a partial pressure was 0.3.
Ar gas of Pa was introduced into the vacuum chamber. The substrate was not heated, and the target was LiF and SiO 2 in a weight ratio of 8: 2.
The mixture was used. The high frequency magnetron sputtering method was used to form films with the film thicknesses shown in Table 1 at an input power of 100 W to obtain antireflection films.
【０００９】[0009]
【表１】 [Table 1]
【００１０】本実施例による反射防止膜の分光特性を図
１に示す。本実施例の反射防止膜は、図１に示すよう
に、波長４００〜７００ｎｍで反射率が２％以下、特に
５２０ｎｍで０．５％以下と充分に低く、単層で充分な
反射防止効果が得られ、また、可視域４００〜７００ｎ
ｍでの吸収もなかった。The spectral characteristics of the antireflection film according to this embodiment are shown in FIG. As shown in FIG. 1, the antireflection film of this example has a sufficiently low reflectance of 2% or less at a wavelength of 400 to 700 nm, particularly 0.5% or less at 520 nm, and has a sufficient antireflection effect in a single layer. Obtained and visible range 400-700n
There was no absorption at m.
【００１１】［実施例２］アクリル樹脂基板（ＰＭＭ
Ａ）を真空槽にセットし、７×１０-3Ｐａまで排気した
後、分圧が１．５ＰａのＡｒガスと、分圧が１ＰａのＯ
2 ガスを真空槽に導入した。基板加熱は行わず、ターゲ
ットは、ＣａＦ2 とＳｉＯ2 とをそれぞれ粉砕した後、
８０：１の重量比で混合し焼結したものを低屈折率材料
として使用し、高屈折率材料としてＷＯ3 を使用した。
それぞれ１００Ｗの高周波マグネトロンスパッタリング
法にて表２の膜厚で成膜を行い、反射防止膜を得た。Example 2 Acrylic resin substrate (PMM
A) was set in a vacuum chamber and evacuated to 7 × 10 −3 Pa, then Ar gas with a partial pressure of 1.5 Pa and O with a partial pressure of 1 Pa.
Two gases were introduced into the vacuum chamber. The substrate was not heated, the target was crushed CaF 2 and SiO 2 respectively,
What was mixed and sintered at a weight ratio of 80: 1 was used as a low refractive index material, and WO 3 was used as a high refractive index material.
Films having the film thicknesses shown in Table 2 were formed by a 100 W high-frequency magnetron sputtering method to obtain antireflection films.
【００１２】[0012]
【表２】 [Table 2]
【００１３】本実施例による反射防止膜の分光特性を図
２に示す。本実施例の反射防止膜は、波長４００〜７０
０ｎｍで反射率０．８％、平均反射率０．３％以下の優
れた反射防止効果が得られた。また、実施例１と同様
に、吸収は全くみられなかった。The spectral characteristics of the antireflection film according to this embodiment are shown in FIG. The antireflection film of this example has a wavelength of 400 to 70.
An excellent antireflection effect with a reflectance of 0% at 0 nm and an average reflectance of 0.3% or less was obtained. Also, as in Example 1, no absorption was observed.
【００１４】本実施例によれば、ターゲットとしてＣａ
Ｆ2 とＳｉＯ2 とを混合したものを用いたため、フッ素
の解離を抑えることができ、吸収のない膜を容易に得る
ことができた。また、膜のテープ剥離試験を行ったが密
着性に関しても何ら問題はなかった。ＳｉＯ2 と混合す
るフッ化物としてＳｒＦ2 を用いても同様の効果が得ら
れた。According to this embodiment, Ca is used as a target.
Since a mixture of F 2 and SiO 2 was used, dissociation of fluorine could be suppressed and a film without absorption could be easily obtained. Further, a tape peeling test of the film was conducted, but there was no problem with the adhesion. The same effect was obtained by using SrF 2 as the fluoride mixed with SiO 2 .
【００１５】［実施例３］ポリカーボネート樹脂基板
（ＰＣ）を真空槽にセットし、５×１０-3Ｔｏｒｒまで
排気した後、分圧が０．２ＰａのＮｅガスを真空槽に導
入した。ターゲットは、Ｎａ3 ＡｌＦ6 とＳｉＯ2 をそ
れぞれ粉砕した後、９：１の重量比で混合し焼結したも
のを低屈折率材料として使用し、高屈折率材料としてＺ
ｒＯ2 を使用した。それぞれ１００Ｗの高周波スパッタ
リング法にて表３の膜厚で成膜を行い、反射防止膜を得
た。Example 3 A polycarbonate resin substrate (PC) was set in a vacuum chamber and evacuated to 5 × 10 −3 Torr, and then Ne gas having a partial pressure of 0.2 Pa was introduced into the vacuum chamber. The target was crushed Na 3 AlF 6 and SiO 2 , respectively, mixed at a weight ratio of 9: 1 and sintered, and used as a low refractive index material, and as a high refractive index material Z.
rO 2 was used. Films having the film thicknesses shown in Table 3 were formed by a high-frequency sputtering method of 100 W to obtain antireflection films.
【００１６】[0016]
【表３】 [Table 3]
【００１７】本実施例の反射防止膜は、図３に示すよう
に、波長４２０〜７００ｎｍで反射率１％以下、平均反
射率０．３％以下の優れた分光特性を有していた。本実
施例によれば、ターゲットとしてＮａ3 ＡｌＦ6 とＳｉ
Ｏ2 とを混合したものを用いたため、実施例２と同様
に、吸収のない膜を容易に得ることができた。また、混
合物の屈折率が実施例２よりも低いため、わずかながら
より低い屈折率を得ることができた。なお、ＳｉＯ2 を
混合するフッ化物としてＮａ5 Ａｌ3Ｆ14を用いても同
様の効果が得られた。As shown in FIG. 3, the antireflection film of this example had excellent spectral characteristics with a reflectance of 1% or less and an average reflectance of 0.3% or less at a wavelength of 420 to 700 nm. According to this embodiment, Na 3 AlF 6 and Si are used as targets.
Since a mixture of O 2 was used, a film without absorption could be easily obtained as in Example 2. Moreover, since the refractive index of the mixture was lower than that of Example 2, a slightly lower refractive index could be obtained. The same effect was obtained even when Na 5 Al 3 F 14 was used as the fluoride mixed with SiO 2 .
【００１８】［比較例１］ポリカーボネート樹脂基板
（ＰＣ）を真空槽にセットし、２×１０-4Ｐａまで排気
した後、分圧が０．３ＰａのＡｒガスを真空槽に導入し
た。基板加熱は行わず、低屈折率材料にはＳｉＯ2 、高
屈折率材料にはＺｒＯ2 のターゲットを用いて、それぞ
れ１００Ｗの高周波マグネトロンスパッタリング法にて
表４の膜厚で成膜を行い、反射防止膜を得た。Comparative Example 1 A polycarbonate resin substrate (PC) was set in a vacuum chamber and evacuated to 2 × 10 -4 Pa, and then Ar gas having a partial pressure of 0.3 Pa was introduced into the vacuum chamber. The substrate was not heated, SiO 2 was used as the low-refractive index material, and ZrO 2 was used as the high-refractive index material. The prevention film was obtained.
【００１９】[0019]
【表４】 [Table 4]
【００２０】本比較例による反射防止膜の分光特性を図
４に示す。本比較例においては、上記実施例と同様に、
可視域の波長４００〜７００ｎｍでの吸収はみられない
ものの、波長４３０〜７００ｎｍで反射率１％以下、平
均反射率０．７％以下と反射率が高めであり、充分な反
射防止効果が得られているとは言い難い。The spectral characteristics of the antireflection film according to this comparative example are shown in FIG. In this comparative example, as in the above example,
Absorption at wavelengths of 400 to 700 nm in the visible region is not observed, but reflectance is high at 1% or less and average reflectance of 0.7% or less at wavelengths of 430 to 700 nm, and sufficient antireflection effect is obtained. It is hard to say that it is being done.
【００２１】[0021]
【発明の効果】以上のように、請求項１に係る発明によ
れば、フッ化物にＳｉＯ2 を混合したターゲットを用い
たので、基板を加熱せずに充分な密着性を確保すること
ができ、自動化が容易であるなどの利点を持つスパッタ
リング法により、可視光の吸収の少ない低反射率の反射
防止膜を容易に得ることができる。請求項２に係る発明
によれば、ＳｉＯ2 より屈折率の低いフッ化物を用いる
ことで、低屈折率材料としてＳｉＯ2 のみを用いた反射
防止膜に比べて光学性能が高くなる。As described above, according to the invention of claim 1, since the target in which the fluoride is mixed with SiO 2 is used, it is possible to secure sufficient adhesion without heating the substrate. By the sputtering method, which has advantages such as easy automation, it is possible to easily obtain an antireflection film having a low reflectance and a low absorption of visible light. According to the second aspect of the present invention, by using the fluoride having a lower refractive index than SiO 2 , the optical performance becomes higher than that of the antireflection film using only SiO 2 as the low refractive index material.
【図１】実施例１の反射防止膜の分光特性を示すグラフ
である。FIG. 1 is a graph showing spectral characteristics of an antireflection film of Example 1.
【図２】実施例２の反射防止膜の分光特性を示すグラフ
である。FIG. 2 is a graph showing the spectral characteristics of the antireflection film of Example 2.
【図３】実施例３の反射防止膜の分光特性を示すグラフ
である。3 is a graph showing the spectral characteristics of the antireflection film of Example 3. FIG.
【図４】比較例１の反射防止膜の分光特性を示すグラフ
である。FIG. 4 is a graph showing the spectral characteristics of the antireflection film of Comparative Example 1.
Claims (2)
ットを構成し、このターゲットをスパッタリングするこ
とにより形成することを特徴とする反射防止膜の製造方
法。1. A method for producing an antireflection film, which comprises forming a target with a mixture of a fluoride and SiO 2, and forming the target by sputtering.
Ｆ2 ，Ｎａ3 ＡｌＦ6 またはＮａ5 Ａｌ3 Ｆ14からな
り、請求項１記載の製造方法により成膜した層を少なく
とも１層設けたことを特徴とする反射防止膜。2. The fluoride is CaF 2 , LiF, Sr.
An antireflection film comprising at least one layer formed of F 2 , Na 3 AlF 6 or Na 5 Al 3 F 14 and formed by the manufacturing method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6224179A JPH0862402A (en) | 1994-08-25 | 1994-08-25 | Antireflection coating and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6224179A JPH0862402A (en) | 1994-08-25 | 1994-08-25 | Antireflection coating and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0862402A true JPH0862402A (en) | 1996-03-08 |
Family
ID=16809769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6224179A Withdrawn JPH0862402A (en) | 1994-08-25 | 1994-08-25 | Antireflection coating and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0862402A (en) |
-
1994
- 1994-08-25 JP JP6224179A patent/JPH0862402A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3808917B2 (en) | Thin film manufacturing method and thin film | |
| JPH05188202A (en) | Multilayer optical thin film | |
| US4846541A (en) | Interference film filter and an optical waveguide and a method for producing the same | |
| JP3905035B2 (en) | Method for forming optical thin film | |
| US7164530B2 (en) | Polarizing filter and optical device using the same | |
| JP4171362B2 (en) | Transparent substrate with antireflection film | |
| JP2003043202A (en) | Antireflection film and optical parts | |
| US5879820A (en) | Multilayer stack of fluoride materials usable in optics and its production process | |
| JPH07209516A (en) | Optical multilayer film filter | |
| JP3560655B2 (en) | Manufacturing method of optical thin film | |
| JPH052101A (en) | Optical component | |
| JP3979814B2 (en) | Optical thin film manufacturing method | |
| JPH0862402A (en) | Antireflection coating and manufacture thereof | |
| JP3710664B2 (en) | Polarizing filter | |
| JPH08211201A (en) | Optical thin film and production therefor | |
| JP2003302521A (en) | Optical multilayer filter | |
| EP3605154B1 (en) | Thin film forming method and porous thin film | |
| CN114114703A (en) | All-dielectric depolarization beamsplitter prism suitable for wide-angle incidence and preparation method thereof | |
| JP3401062B2 (en) | Optical thin film and method for manufacturing the same | |
| JP4455022B2 (en) | Antireflection film and objective lens | |
| JP2003131010A (en) | Optical component, optical unit, and image display device using the same | |
| JPH07151906A (en) | Optical thin film and its production | |
| JP2815949B2 (en) | Anti-reflective coating | |
| JPH09251102A (en) | Production of optical thin film and optical thin film | |
| JPH0792304A (en) | Optical thin film and its production |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20011106 |