JPH09251102A - Production of optical thin film and optical thin film - Google Patents
Production of optical thin film and optical thin filmInfo
- Publication number
- JPH09251102A JPH09251102A JP8058706A JP5870696A JPH09251102A JP H09251102 A JPH09251102 A JP H09251102A JP 8058706 A JP8058706 A JP 8058706A JP 5870696 A JP5870696 A JP 5870696A JP H09251102 A JPH09251102 A JP H09251102A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- thin film
- optical thin
- film
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 4
- -1 AlF3 Chemical compound 0.000 claims abstract 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 4
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910004261 CaF 2 Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000010494 dissociation reaction Methods 0.000 abstract description 4
- 230000005593 dissociations Effects 0.000 abstract description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 abstract description 3
- 239000011737 fluorine Substances 0.000 abstract description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 abstract 2
- 229910001632 barium fluoride Inorganic materials 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 abstract 1
- 239000000463 material Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910016036 BaF 2 Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光学部品に用いら
れる反射防止膜やハーフミラー等の光学薄膜を製造する
方法及びその光学薄膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an optical thin film such as an antireflection film or a half mirror used for an optical component, and the optical thin film.
【０００２】[0002]
【従来の技術】基板を加熱することなく優れた膜の密着
性を得られることや、自動化の容易さといった利点か
ら、スパッタリング法による光学薄膜形成の技術が検討
されている。しかし、このスパッタリングにおいて、真
空蒸着法で低屈折率材料として最も一般的に用いられて
いるＭｇＦ2 を使用した場合、スパッタリングによって
フッ素が解離し可視光の吸収が生じる。このためＭｇＦ
2 はスパッタリングに使用することができない問題を有
している。2. Description of the Related Art A technique for forming an optical thin film by a sputtering method has been studied because of its advantages such as excellent film adhesion without heating a substrate and ease of automation. However, in this sputtering, when MgF 2 which is most commonly used as a low refractive index material in the vacuum vapor deposition method is used, fluorine is dissociated by the sputtering and absorption of visible light occurs. Therefore, MgF
2 has a problem that it cannot be used for sputtering.
【０００３】そのため、ＳｉＯ2 あるいはＳｉＯ2 と他
の物質との混合物を使用することが検討されている。例
えば、特開平２−９６７０１号公報では、低屈折率材料
としてＳｉＯ2 、ＳｉＯ2 とアルミナ（Ａｌ2 Ｏ3 ）の
混合物、またはＳｉＯ2 を主成分とする物質を用い、高
屈折率材料としてＴｉＯ2 、Ｔａ2 Ｏ5 、ＺｒＯ2 、Ｉ
ｎ2 Ｏ3 、ＳｎＯ2 、Ｎｂ2 Ｏ5 もしくはＹｂ2 Ｏ3 ま
たはこれらの混合物を用いている。そしてこれらの高屈
折率材料と低屈折率材料を透明基板上にスパッタリング
により交互に積層することにより反射防止膜を得てい
る。Therefore, the use of SiO 2 or a mixture of SiO 2 and another substance has been investigated. For example, Japanese Laid-2-96701 discloses a mixture of SiO 2, SiO 2 and alumina (Al 2 O 3), or a material mainly composed of SiO 2 used as a low refractive index material, TiO as a high refractive index material 2 , Ta 2 O 5 , ZrO 2 , I
n 2 O 3 , SnO 2 , Nb 2 O 5 or Yb 2 O 3 or mixtures thereof are used. Then, the high-refractive index material and the low-refractive index material are alternately laminated on the transparent substrate by sputtering to obtain an antireflection film.
【０００４】[0004]
【発明が解決しようとする課題】しかし、ＳｉＯ2 の屈
折率は１．４６程度であり、ＭｇＦ2 と比較して高いた
め、屈折率１．５程度の基板に対して単層のみの反射防
止膜を形成しても充分な反射防止効果を得られない。そ
のため、これらの基板では２層以上の膜構成としなけれ
ば実用的な反射防止効果を得られないばかりか、得られ
た反射防止膜自体の反射防止効果も充分とはなっていな
い。また、ビームスプリッターやエッジフィルター等を
構成する場合には高屈折率物質と低屈折率物質との屈折
率の差が大きいほうが望ましいが、低屈折率物質として
ＳｉＯ2 を用いた場合、充分な特性を得られなかった
り、層数が増えてコストアップとなる等の問題が生じ
る。However, since the refractive index of SiO 2 is about 1.46, which is higher than that of MgF 2 , reflection prevention of only a single layer on a substrate having a refractive index of about 1.5 is possible. Even if a film is formed, a sufficient antireflection effect cannot be obtained. Therefore, in these substrates, a practical antireflection effect cannot be obtained unless a film structure having two or more layers is formed, and the antireflection effect of the obtained antireflection film itself is not sufficient. Further, when forming a beam splitter, an edge filter or the like, it is desirable that the difference in refractive index between the high refractive index substance and the low refractive index substance is large, but when SiO 2 is used as the low refractive index substance, sufficient characteristics are obtained. Cannot be obtained, or the number of layers increases, resulting in cost increase.
【０００５】本発明は、このような従来の問題点を考慮
してなされたものであり、スパッタリング法により安定
して形成でき、少ない層数で良好な光学特性を有する光
学薄膜を提供することを目的とする。また、本発明はこ
の光学薄膜を形成するのに適した製造方法を提供するこ
とを目的とする。The present invention has been made in consideration of such conventional problems, and it is an object of the present invention to provide an optical thin film which can be stably formed by a sputtering method and has good optical characteristics with a small number of layers. To aim. Another object of the present invention is to provide a manufacturing method suitable for forming this optical thin film.
【０００６】[0006]
【課題を解決するための手段】本発明の光学薄膜の製造
方法は、フッ化マグネシウム（ＭｇＦ2 ）とその他のフ
ッ化物との混合物からなるターゲットをスパッタリング
することにより成膜することを特徴とする。この場合に
おいて、その他のフッ化物は、ＡｌＦ3 、ＢａＦ2 、Ｃ
ａＦ2 、ＬｉＦ、Ｎａ3 ＡｌＦ6 、Ｎａ5 Ａｌ3 Ｆ14の
内の１種又は２種以上を使用することができる。The method for producing an optical thin film of the present invention is characterized by forming a film by sputtering a target made of a mixture of magnesium fluoride (MgF 2 ) and another fluoride. . In this case, the other fluorides are AlF 3 , BaF 2 , C
One or more of aF 2 , LiF, Na 3 AlF 6 , and Na 5 Al 3 F 14 can be used.
【０００７】本発明の光学薄膜は、このようにして成膜
された層を１層以上有することを特徴としている。The optical thin film of the present invention is characterized by having one or more layers thus formed.
【０００８】ＭｇＦ2 と、その他のフッ化物を混合した
ターゲットをスパッタリングすることにより、フッ素の
解離が抑制され、安定して吸収が極めて少ない低屈折率
膜を得ることができることが本発明者の研究の結果、判
明した。こうして得られる屈折率、吸収の面で優れた低
屈折率膜を単層、あるいは高屈折率材料と組み合わせた
複数層とすることにより、従来よりも優れた光学特性を
得ることが可能となる。かかるその他のフッ化物として
は、ＡｌＦ3 、ＢａＦ2 、ＣａＦ2 、ＣｅＦ3、ＧａＦ
2 、ＬａＦ3 、ＬｉＦ、Ｎａ3 ＡｌＦ6 、Ｎａ5 Ａｌ3
Ｆ14、ＮｄＦ3、ＮａＦ、ＩｎＦ3 、ＰｂＦ2 、ＳｒＦ
2 等、特に制限がないが、屈折率の点からはＡｌＦ3 、
ＢａＦ2 、ＣａＦ2 、ＬｉＦ、Ｎａ3 ＡｌＦ6 、Ｎａ5
Ａｌ3 Ｆ 14の内の１出力１種又は２種を使用することが
より好ましい。また、混合物の割合は、１重量％以上あ
れは著しい効果が認められるが、特に制限するものでは
ない。MgFTwoMixed with other fluoride
By sputtering the target,
Low refractive index with stable dissociation and minimal dissociation
As a result of research conducted by the present inventor, it was found that a film can be obtained.
Revealed. The resulting low refractive index and excellent absorption
Combined refractive index film with single layer or high refractive index material
By using multiple layers, superior optical characteristics than before
It becomes possible to obtain. As such other fluorides
Is AlFThree, BaFTwo, CaFTwo, CeFThree, GaF
Two, LaFThree, LiF, NaThreeAlF6, NaFiveAlThree
F14, NdFThree, NaF, InFThree, PbFTwo, SrF
TwoThere is no particular limitation, but from the viewpoint of refractive index, AlFThree,
BaFTwo, CaFTwo, LiF, NaThreeAlF6, NaFive
AlThreeF 14It is possible to use one output of one or two of
More preferred. Further, the proportion of the mixture is 1% by weight or more.
This has a remarkable effect, but is not particularly limited
Absent.
【０００９】[0009]
（実施の形態１）ポリカーボネイト樹脂（ＰＣ）基板を
真空槽にセットし、３×１０-4Ｐａの真空度まで排気し
た後、分圧が１．０ＰａのＡｒガスを真空槽に導入し
た。屈折率１．３８のＭｇＦ2 と屈折率１．４０のＣａ
Ｆ2 をそれぞれ粉砕した後、重量比１：１の割合で混合
し、屈折率１．３９のターゲットとして使用した。高周
波スパッタリング法を用い、投入電力１ｋＷとして表１
の膜厚で成膜を行い、単層の反射防止膜を得た。(Embodiment 1) A polycarbonate resin (PC) substrate was set in a vacuum chamber and evacuated to a vacuum degree of 3 × 10 −4 Pa, and then Ar gas having a partial pressure of 1.0 Pa was introduced into the vacuum chamber. MgF 2 with a refractive index of 1.38 and Ca with a refractive index of 1.40
F 2 was pulverized and then mixed at a weight ratio of 1: 1 and used as a target having a refractive index of 1.39. The high frequency sputtering method is used, and the input power is 1 kW.
A film having a film thickness of 1 was formed to obtain a single-layer antireflection film.
【００１０】この実施の形態の反射防止膜の分光特性を
図１に示す。この反射防止膜は単層であるにも関わら
ず、可視光の領域での反射率が２％以下の反射防止効果
が得られ、可視域（４００〜７００ｎｍ）での吸収は
０．１％以下であった。本実施の形態によれば、ターゲ
ットとしてＭｇＦ2 とＣａＦ2 を混合したものを用いた
ため、フッ素の解離を抑えることができ、吸収のない膜
が得られた。なお、ＣａＦ 2 に代えてＮａ3 ＡｌＦ6 又
はＮａ5 Ａｌ3 Ｆ14としても同様の効果が得られた。The spectral characteristics of the antireflection film of this embodiment are
As shown in FIG. Although this antireflection film is a single layer,
, The anti-reflection effect with a reflectance of 2% or less in the visible light range
Is obtained and the absorption in the visible range (400 to 700 nm) is
It was 0.1% or less. According to this embodiment, the target
MgF as a unitTwoAnd CaFTwoUsed a mixture of
Therefore, the dissociation of fluorine can be suppressed and the film does not absorb.
was gotten. In addition, CaF TwoInstead of NaThreeAlF6or
Is NaFiveAlThreeF14Also, the same effect was obtained.
【００１１】[0011]
【表１】 [Table 1]
【００１２】（実施の形態２）ＬａＫ８を硝種とする光
学ガラス基板を真空槽にセットし、６×１０-3Ｐａの真
空度まで排気した後、分圧が０．３ＰａのＫｒガスを真
空槽に導入した。基板加熱は行わなかった。ＭｇＦ2 と
ＢａＦ2 をそれぞれ粉砕した後、重量比３：１の割合で
混合して屈折率１．３６の材料をつくり、低屈折率材料
のターゲットとして用いた。中間屈折率材料としてＡｌ
2 Ｏ3 を用いた。高屈折率材料としてはＴｉＯ2 を使用
した。それぞれ投入電力１ｋＷの高周波スパッタリング
法により表２の膜厚で成膜を行い、反射防止膜を得た。(Embodiment 2) An optical glass substrate using LaK8 as a glass type is set in a vacuum chamber and evacuated to a vacuum degree of 6 × 10 −3 Pa, and then Kr gas having a partial pressure of 0.3 Pa is vacuum chamber. Introduced. The substrate was not heated. After crushing MgF 2 and BaF 2 respectively, they were mixed at a weight ratio of 3: 1 to prepare a material having a refractive index of 1.36, which was used as a target of a low refractive index material. Al as an intermediate refractive index material
2 O 3 was used. TiO 2 was used as the high refractive index material. Films having the film thicknesses shown in Table 2 were formed by a high frequency sputtering method with an input power of 1 kW to obtain antireflection films.
【００１３】図２はこの実施の形態の分光特性を示す。
図２に示すように４８０ｎｍ〜６００ｎｍの波長領域
で、反射率１％以下である分光特性を有する反射防止膜
を得ることができた。この実施の形態によれば、ターゲ
ットとしてＭｇＦ2 とＢａＦ2とを混合したものを用い
たため、実施の形態１と同様に吸収のない膜とすること
ができた。FIG. 2 shows the spectral characteristics of this embodiment.
As shown in FIG. 2, it was possible to obtain an antireflection film having a spectral characteristic with a reflectance of 1% or less in the wavelength region of 480 nm to 600 nm. According to this embodiment, since a mixture of MgF 2 and BaF 2 is used as the target, a film having no absorption can be obtained as in the first embodiment.
【００１４】[0014]
【表２】 [Table 2]
【００１５】（実施の形態３）アモルファスポリオレフ
ィン基板を真空槽にセットし、７×１０-3Ｐａの真空度
まで排気した後、分圧が０．５ＰａのＨｅガスと、０．
１ＰａのＣＦ4 ガスを真空槽に導入した。屈折率１．３
８のＭｇＦ2 と屈折率１．３６のＡｌＦ3 をそれぞれ粉
砕した後、重量比９：１の割合で混合し、屈折率１．３
８の低屈折率材料としてのターゲットを作製した。高屈
折率材料としてＺｒＯ2 を使用した。それぞれ投入電力
１００Ｗの高周波マグネトロンスパッタリング法によっ
て表３の膜厚で成膜を行い、反射防止膜を得た。(Embodiment 3) An amorphous polyolefin substrate is set in a vacuum chamber and evacuated to a vacuum degree of 7 × 10 -3 Pa, then a He gas having a partial pressure of 0.5 Pa and a pressure of 0.
CF 4 gas of 1 Pa was introduced into the vacuum chamber. Refractive index 1.3
8 MgF 2 and the AlF 3 having a refractive index of 1.36 was pulverized, respectively, the weight ratio 9: 1 ratio, refractive index 1.3
A target as a low refractive index material of No. 8 was produced. ZrO 2 was used as the high refractive index material. Films having the film thicknesses shown in Table 3 were formed by a high frequency magnetron sputtering method with an input power of 100 W to obtain antireflection films.
【００１６】図３はこの実施の形態の分光特性を示す。
図３に示すように４３０ｎｍ〜７００ｎｍでの可視領域
で、反射率１％以下である反射防止効果が得られ、また
吸収もなかった。なお、ＣＦ4 ガスの導入により吸収を
より減少させることかできるが、ＣＦ4 に代えてＣＨＦ
3 、ＳＦ6 、ＮＦ3 等を用いても同様に効果を得ること
ができた。FIG. 3 shows the spectral characteristics of this embodiment.
As shown in FIG. 3, in the visible region of 430 nm to 700 nm, an antireflection effect with a reflectance of 1% or less was obtained, and there was no absorption. The absorption can be further reduced by introducing CF 4 gas, but CHF is used instead of CF 4.
The same effect could be obtained by using 3 , SF 6 , NF 3, etc.
【００１７】[0017]
【表３】 [Table 3]
【００１８】（実施の形態４）ＦＫ０１を硝種とする光
学ガラス製の三角プリズムを真空槽にセットし、４×１
０-3Ｐａの真空度まで排気した後、分圧が１ＰａのＡｒ
ガスと、分圧０．５ＰａのＯ2 ガスを真空槽に導入し
た。基板加熱は行わなかった。屈折率１．３８のＭｇＦ
2 と屈折率１．３６のＬｉＦをそれぞれ粉砕した後、重
量比４：６の割合で混合し、屈折率１．３７の材料を作
製し、低屈折率材料のターゲットとして用いた。高屈折
率材料にはＴｉＯ2 を使用した。それぞれ投入電力５０
０Ｗの高周波スパッタリング法によって表４に示す膜厚
で成膜を行った。これをもう一つのガラスプリズムにＵ
Ｖ硬化型接着剤を用いて接合し、キューブ型のビームス
プリッターを作製した。(Embodiment 4) A triangular prism made of optical glass using FK01 as a glass type is set in a vacuum chamber and 4 × 1.
After evacuating to a vacuum of 0 -3 Pa, Ar with a partial pressure of 1 Pa
Gas and O 2 gas with a partial pressure of 0.5 Pa were introduced into the vacuum chamber. The substrate was not heated. MgF with a refractive index of 1.38
2 and LiF having a refractive index of 1.36 were crushed, respectively, and then mixed at a weight ratio of 4: 6 to prepare a material having a refractive index of 1.37, which was used as a target of a low refractive index material. TiO 2 was used as the high refractive index material. Input power 50
A film having a film thickness shown in Table 4 was formed by a 0 W high frequency sputtering method. Add this to another glass prism
Bonding was performed using a V-curable adhesive to produce a cube-type beam splitter.
【００１９】図４はこの実施の形態における入射角４５
°での分光特性であり、特性曲線ＡはＳ偏光を、特性曲
線ＢはＰ偏光を示す。この実施の形態では、層数が１０
層で偏光比が９：１の偏光ビームスプリッターを作製す
ることができた。FIG. 4 shows an incident angle 45 in this embodiment.
The characteristic curve A shows S-polarized light, and the characteristic curve B shows P-polarized light. In this embodiment, the number of layers is 10.
It was possible to make a polarizing beam splitter with a polarization ratio of 9: 1 in layers.
【００２０】[0020]
【表４】 [Table 4]
【００２１】[0021]
【発明の効果】以上のように本発明によれば、スパッタ
リング法を用い、少ない層数で光吸収のない低屈折率の
光学薄膜を製造することができる。As described above, according to the present invention, it is possible to manufacture an optical thin film having a low refractive index with a small number of layers and no light absorption by using the sputtering method.
【図１】実施の形態１の分光特性図である。FIG. 1 is a spectral characteristic diagram of the first embodiment.
【図２】実施の形態２の分光特性図である。FIG. 2 is a spectral characteristic diagram of the second embodiment.
【図３】実施の形態３の分光特性図である。FIG. 3 is a spectral characteristic diagram of the third embodiment.
【図４】実施の形態４の分光特性図である。FIG. 4 is a spectral characteristic diagram of the fourth embodiment.
フロントページの続き (72)発明者 池田 浩 東京都渋谷区幡ヶ谷２丁目43番２号 オリ ンパス光学工業株式会社内 (72)発明者 豊原 延好 東京都渋谷区幡ヶ谷２丁目43番２号 オリ ンパス光学工業株式会社内 (72)発明者 生水 利明 東京都渋谷区幡ヶ谷２丁目43番２号 オリ ンパス光学工業株式会社内Front page continued (72) Inventor Hiroshi Ikeda 2-43-2 Hatagaya, Shibuya-ku, Tokyo Olympus Optical Co., Ltd. (72) Innovator Nobuyoshi Toyohara 2-43-2 Hatagaya, Shibuya-ku, Tokyo Olympus Inside Optical Industry Co., Ltd. (72) Inventor Toshiaki Namasu 24-2-3 Hatagaya, Shibuya-ku, Tokyo Inside Olympus Optical Industry Co., Ltd.
Claims (3)
との混合物からなるターゲットをスパッタリングするこ
とにより成膜することを特徴とする光学薄膜の製造方
法。1. A method for producing an optical thin film, which comprises forming a film by sputtering a target made of a mixture of magnesium fluoride and other fluorides.
ａＦ2 、ＣａＦ2 、ＬｉＦ、Ｎａ3 ＡｌＦ6 、Ｎａ5 Ａ
ｌ3 Ｆ14の内の１種又は２種以上であることを特徴とす
る請求項１記載の光学薄膜の製造方法。2. The other fluoride is AlF 3 , B
aF 2 , CaF 2 , LiF, Na 3 AlF 6 , Na 5 A
2. The method for producing an optical thin film according to claim 1, wherein one or more of l 3 F 14 is used.
た層を１層以上有することを特徴とする光学薄膜。3. An optical thin film having one or more layers formed by the method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8058706A JPH09251102A (en) | 1996-03-15 | 1996-03-15 | Production of optical thin film and optical thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8058706A JPH09251102A (en) | 1996-03-15 | 1996-03-15 | Production of optical thin film and optical thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09251102A true JPH09251102A (en) | 1997-09-22 |
Family
ID=13091958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8058706A Withdrawn JPH09251102A (en) | 1996-03-15 | 1996-03-15 | Production of optical thin film and optical thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09251102A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005221988A (en) * | 2004-02-09 | 2005-08-18 | Konica Minolta Opto Inc | Optical element and optical pickup device |
| WO2011162399A1 (en) * | 2010-06-24 | 2011-12-29 | Canon Kabushiki Kaisha | Optical film, optical element, manufacturing method thereof, and photographic optical system |
-
1996
- 1996-03-15 JP JP8058706A patent/JPH09251102A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005221988A (en) * | 2004-02-09 | 2005-08-18 | Konica Minolta Opto Inc | Optical element and optical pickup device |
| WO2011162399A1 (en) * | 2010-06-24 | 2011-12-29 | Canon Kabushiki Kaisha | Optical film, optical element, manufacturing method thereof, and photographic optical system |
| CN103097917A (en) * | 2010-06-24 | 2013-05-08 | 佳能株式会社 | Optical film, optical element, manufacturing method thereof, and photographic optical system |
| US9019616B2 (en) | 2010-06-24 | 2015-04-28 | Canon Kabushiki Kaisha | Optical film, optical element, manufacturing method thereof, and photographic optical system |
| CN103097917B (en) * | 2010-06-24 | 2016-03-09 | 佳能株式会社 | Optical film, optical element, manufacturing method thereof, and imaging optical system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
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