JPH0862442A - Method for manufacturing glass waveguide - Google Patents

Method for manufacturing glass waveguide

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Publication number
JPH0862442A
JPH0862442A JP19977394A JP19977394A JPH0862442A JP H0862442 A JPH0862442 A JP H0862442A JP 19977394 A JP19977394 A JP 19977394A JP 19977394 A JP19977394 A JP 19977394A JP H0862442 A JPH0862442 A JP H0862442A
Authority
JP
Japan
Prior art keywords
glass
core
film
waveguide
glass film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19977394A
Other languages
Japanese (ja)
Inventor
Toshihide Tokunaga
利秀 徳永
Fujio Kikuchi
不二男 菊地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP19977394A priority Critical patent/JPH0862442A/en
Publication of JPH0862442A publication Critical patent/JPH0862442A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】コアガラス膜の表面に欠陥があっても、これを
薄膜の石英ガラス膜で均一化を図ることにより、低損失
なガラス導波路を得る。 【構成】石英ガラス基板1に電子ビーム蒸発法でコアガ
ラス膜2を形成し、コアガラス膜2上にその表面の均一
化のためのに、プラズマCVD法等で石英ガラス膜(石
英系ガラス膜)6を形成する。このため、ホトリソグラ
フィ工程におけるレジスト膜の塗布は均一となり、ホト
リソグラフィ及び反応性イオンエッチングによって石英
ガラス膜6及びコアガラス膜2から不要な部分を除去す
ることにより、欠け等のない均一なコア導波路3を形成
できる。次いで、基板1上に多孔質ガラスを堆積し、こ
の多孔質ガラス層を透明ガラス化してクラッド層4を形
成し、低損失なガラス導波路を作製する。
(57) [Abstract] [Objective] Even if there is a defect on the surface of the core glass film, a low loss glass waveguide is obtained by making it uniform by a thin quartz glass film. [Structure] A core glass film 2 is formed on a quartz glass substrate 1 by an electron beam evaporation method, and in order to make the surface of the core glass film 2 uniform, a quartz glass film (a quartz glass film) is formed by a plasma CVD method or the like. ) 6 is formed. Therefore, the application of the resist film in the photolithography process becomes uniform, and unnecessary portions are removed from the quartz glass film 6 and the core glass film 2 by photolithography and reactive ion etching, so that a uniform core conductor without chipping or the like is formed. The waveguide 3 can be formed. Next, porous glass is deposited on the substrate 1, and this porous glass layer is made into a transparent glass to form a clad layer 4, thereby producing a low-loss glass waveguide.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ガラス導波路の製造方
法に係り、特にコアガラス膜の表面の不均一を改善して
ガラス導波路の低損失化を図ったガラス導波路の製造方
法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a glass waveguide, and more particularly to a method for manufacturing a glass waveguide in which unevenness of the surface of a core glass film is improved to reduce the loss of the glass waveguide. It is a thing.

【0002】[0002]

【従来の技術】従来のガラス導波路の製造方法を図3に
より説明する。まず、導波路を形成する石英ガラス基板
1に対して電子ビーム蒸発法によりコアガラス膜2を厚
膜形成する(図3(a) )。次に、コアガラス膜2の不要
な部分をホトリソグラフィ及びドライエッチングにより
除去してコア導波路3を形成する(図3(b) )。さら
に、火炎堆積法により、多孔質ガラス層を基板1のコア
導波路3上に堆積形成させた後、電気炉内で多孔質ガラ
ス層を透明ガラス化してクラッド層4を形成し、ガラス
導波路を得る(図3(c) )。その後、この導波路が形成
された石英ガラス基板1を所定の寸法にダイシング装置
で切り出し、ガラス導波路素子を作成する。
2. Description of the Related Art A conventional method for manufacturing a glass waveguide will be described with reference to FIG. First, a thick core glass film 2 is formed on a quartz glass substrate 1 forming a waveguide by an electron beam evaporation method (FIG. 3 (a)). Next, unnecessary portions of the core glass film 2 are removed by photolithography and dry etching to form the core waveguide 3 (FIG. 3 (b)). Further, a porous glass layer is deposited and formed on the core waveguide 3 of the substrate 1 by a flame deposition method, and then the porous glass layer is transparentized in an electric furnace to form a clad layer 4, and the glass waveguide is formed. (Fig. 3 (c)). After that, the quartz glass substrate 1 on which the waveguide is formed is cut into a predetermined size by a dicing device to prepare a glass waveguide element.

【0003】[0003]

【発明が解決しようとする課題】ところが、上述した製
造工程で得られたガラス導波路素子には、図4に示すよ
うに、石英ガラス基板1上のコア導波路3の一部に欠け
5が生じやすかった。
However, in the glass waveguide element obtained by the above-described manufacturing process, as shown in FIG. 4, a part of the core waveguide 3 on the quartz glass substrate 1 has a chip 5. It was easy to occur.

【0004】これは、電子ビーム蒸発法によりコアガラ
ス膜2を厚膜形成する場合において、また、火炎堆積法
を用いてコアガラス膜を形成する場合においても、装置
のチャンバー内に付着していた余剰なガラスまたは多孔
質ガラスが剥離してコアガラス膜上に付着することが考
えられる。この付着物のために、コアガラス膜2の表面
は不均一となり、ホトリソグラフィ工程におけるレジス
トが付着物部のまわりには塗布されない。このため、コ
アガラス膜2をドライエッチングする際に、コア導波路
3の一部に欠け5が生じてしまうこととなり、コア導波
路の損失が増加してしまうという問題があった。
This is because when the core glass film 2 is formed thick by the electron beam evaporation method, and also when the core glass film is formed by the flame deposition method, it adheres to the chamber of the apparatus. It is considered that excess glass or porous glass peels off and adheres to the core glass film. Due to this deposit, the surface of the core glass film 2 becomes non-uniform, and the resist in the photolithography process is not applied around the deposit. Therefore, when the core glass film 2 is dry-etched, the chip 5 is partially formed in the core waveguide 3, which causes a problem that the loss of the core waveguide increases.

【0005】本発明の目的は、前記した従来技術の欠点
を解消し、コアガラス膜の表面に欠陥があっても、低損
失なガラス導波路を製造することができるガラス導波路
の製造方法を提供することにある。
An object of the present invention is to solve the above-mentioned drawbacks of the prior art, and to provide a glass waveguide manufacturing method capable of manufacturing a low-loss glass waveguide even if the surface of the core glass film has a defect. To provide.

【0006】[0006]

【課題を解決するための手段】本発明のガラス導波路の
製造方法は、石英ガラス基板上にコアガラス膜を形成
し、このコアガラス膜の表面を均一にするために、コア
ガラス膜上に薄膜の石英系ガラス膜を形成し、この石英
系ガラス膜及びコアガラス膜から不要な部分を除去して
コア導波路を形成し、このコア導波路が形成された石英
ガラス基板上にクラッド層を形成するようにしたもので
ある。
The method of manufacturing a glass waveguide according to the present invention comprises forming a core glass film on a quartz glass substrate and forming a core glass film on the core glass film in order to make the surface of the core glass film uniform. A thin silica glass film is formed, unnecessary portions are removed from the silica glass film and the core glass film to form a core waveguide, and a clad layer is formed on the silica glass substrate on which the core waveguide is formed. It is designed to be formed.

【0007】本発明において、上記石英系ガラス膜は、
石英ガラスまたは石英ガラスと同等な屈折率の石英系ガ
ラスからなり、且つその膜厚を3μm以下とするのがよ
い。
In the present invention, the quartz glass film is
It is preferable that it is made of quartz glass or quartz glass having a refractive index equivalent to that of quartz glass, and the thickness thereof is 3 μm or less.

【0008】[0008]

【作用】コアガラス膜の上に薄膜の石英系ガラス膜を形
成しているので、コアガラス膜表面の平滑化・均一化が
図れ、コアガラス膜加工工程においてレジスト膜が均一
に塗布されることとなり、欠け等の欠陥のないコア導波
路を形成することができる。
[Function] Since the thin quartz glass film is formed on the core glass film, the surface of the core glass film can be smoothed and made uniform, and the resist film can be applied uniformly in the core glass film processing step. Therefore, it is possible to form a core waveguide having no defects such as chips.

【0009】石英系ガラス膜を、膜厚が3μm以下で石
英ガラスまたはこれと同等な屈折率の石英系ガラスにす
ると、膜表面にガラス状の異物が生じることがなく、コ
アガラス膜表面を均一にできると共に、コアガラス膜加
工工程のエッチングも短時間でよく、異方性エッチング
となる。
When the silica glass film is made of silica glass having a film thickness of 3 μm or less or a silica glass having a refractive index equivalent to that of the silica glass film, no glass-like foreign matter is generated on the film surface and the surface of the core glass film is made uniform. In addition, the etching in the core glass film processing step can be performed in a short time, and anisotropic etching can be performed.

【0010】[0010]

【実施例】以下に、本発明の実施例を図面を用いて説明
する。図1は本発明の一実施例に係るガラス導波路の製
造工程を示す断面図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a manufacturing process of a glass waveguide according to an embodiment of the present invention.

【0011】まず、1mm厚、3インチ径の石英ガラス基
板1上に厚さ8μmの石英系のコアガラス膜2を電子ビ
ーム蒸発法で形成した(図1(a) )。得られた基板1上
のコアガラス膜2の表面には約2μmのガラス状の異物
が認められた。
First, a quartz core glass film 2 having a thickness of 8 μm was formed on a quartz glass substrate 1 having a thickness of 1 mm and a diameter of 3 inches by an electron beam evaporation method (FIG. 1 (a)). On the surface of the obtained core glass film 2 on the substrate 1, glass-like foreign matters of about 2 μm were observed.

【0012】これは、蒸発時に、電子ビーム蒸発装置の
チャンバー内に付着した余剰なガラスの微粒子がコアガ
ラス膜2に堆積したためと考えられる。そこで、コアガ
ラス膜2の表面を均一にするために、プラズマCVD法
により、コアガラス膜2上に2.5μm厚で石英ガラス
の石英ガラス膜6を形成した(図1(b) )。
It is considered that this is because the excessive glass fine particles adhering to the inside of the chamber of the electron beam evaporator were deposited on the core glass film 2 during evaporation. Therefore, in order to make the surface of the core glass film 2 uniform, a quartz glass film 6 of quartz glass having a thickness of 2.5 μm was formed on the core glass film 2 by the plasma CVD method (FIG. 1 (b)).

【0013】次いで、石英ガラス膜6上に、1μm厚の
WSi膜をスパッタリング法で形成し、さらに、1μm
のレジスト膜を塗布した後、ホトリソグラフィ及び反応
性イオンエッチングで、石英ガラス膜6及びコアガラス
膜2から不要な部分を除去してコア導波路3を形成した
(図1(c) )。
Then, a WSi film having a thickness of 1 μm is formed on the quartz glass film 6 by a sputtering method, and further, 1 μm.
After applying the resist film of No. 3, unnecessary portions were removed from the quartz glass film 6 and the core glass film 2 by photolithography and reactive ion etching to form a core waveguide 3 (FIG. 1 (c)).

【0014】その後、石英ガラス基板1上に多孔質ガラ
スを360μm堆積し、これを電気炉内で透明ガラス化
することによりクラッド層4を形成して、ガラス導波路
を製作した(図1(d) )。さらに、この導波路が形成さ
れた石英ガラス基板1をダイシング装置で切り出して、
ガラス導波路素子を作製した。得られたガラス導波路素
子のコア導波路3には、欠け等の欠陥は認められなかっ
た。
After that, 360 μm of porous glass was deposited on the quartz glass substrate 1, and this was made into a transparent glass in an electric furnace to form a clad layer 4 to manufacture a glass waveguide (FIG. 1 (d). )). Further, the quartz glass substrate 1 on which this waveguide is formed is cut out by a dicing device,
A glass waveguide device was produced. No defects such as chipping were found in the core waveguide 3 of the obtained glass waveguide device.

【0015】なお、上記実施例では、石英ガラス膜(石
英系ガラス膜)6をプラズマCVD法で形成したが、電
子ビーム蒸発法を用いるようにしてもよい。電子ビーム
蒸発法でも、3μm以下の薄膜では膜表面にはガラス状
の異物は認められず、均一化が図れる。同様に、石英系
ガラス膜の形成を火炎堆積法で行ってもよい。火炎堆積
法で、石英ガラス基板1と同等な屈折率となるように、
燐と硼素を含む多孔質ガラス層を形成してこれを透明ガ
ラス化したが、この石英系ガラス膜の膜厚が3μ以下の
段階では、余剰の多孔質ガラスが少なく、ガラス状の異
物は認められず、均一な膜表面であった。
Although the quartz glass film (quartz glass film) 6 is formed by the plasma CVD method in the above embodiment, the electron beam evaporation method may be used. Even with the electron beam evaporation method, in a thin film of 3 μm or less, no glassy foreign matter is recognized on the surface of the film, and uniformization can be achieved. Similarly, the silica-based glass film may be formed by the flame deposition method. In order to obtain the same refractive index as the quartz glass substrate 1 by the flame deposition method,
A porous glass layer containing phosphorus and boron was formed and made into a transparent glass, but when the thickness of this quartz glass film was 3 μm or less, excess porous glass was small and glassy foreign matter was recognized. However, the film surface was uniform.

【0016】一方、石英ガラス膜6の膜厚を3μm以上
に形成すると、反応性イオンエッチングでコア導波路3
を形成する際に、長時間を要し、等方性エッチングが進
み、図2の形状のコア導波路3となってしまった。この
ため、ガラス導波路素子としてマッハチェンダ型光回路
を形成したが、所期の目的の合分波特性が得られなかっ
た。
On the other hand, when the quartz glass film 6 is formed to a thickness of 3 μm or more, the core waveguide 3 is formed by reactive ion etching.
It took a long time to form the film, and the isotropic etching progressed, resulting in the core waveguide 3 having the shape shown in FIG. For this reason, a Mach-Cendar type optical circuit was formed as a glass waveguide element, but the intended multiplexing / demultiplexing characteristics could not be obtained.

【0017】[0017]

【発明の効果】コアガラス膜の上に薄膜の石英系ガラス
膜を形成しているので、コアガラス膜表面の平滑化・均
一化が図れ、コアガラス膜加工工程においてレジスト膜
が均一に塗布されることとなり、欠け等の欠陥のない所
定の形状・寸法のコア導波路を形成することができ、低
損失なガラス導波路を製造することができる。
Since a thin quartz glass film is formed on the core glass film, the surface of the core glass film can be smoothed and made uniform, and the resist film is evenly applied in the core glass film processing step. As a result, it is possible to form a core waveguide having a predetermined shape and size without defects such as chipping, and it is possible to manufacture a low-loss glass waveguide.

【0018】また、石英系ガラス膜の膜厚を3μm以下
とすれば、短時間で異方性エッチングができる。さら
に、石英ガラス基板と同じ石英ガラスまたは同等な屈折
率の石英系ガラスで石英系ガラス膜を形成すると、伝送
損失などコア導波路に悪影響を与えることもなく、膜の
除去も必要ない。
When the thickness of the quartz glass film is 3 μm or less, anisotropic etching can be performed in a short time. Further, when the silica glass film is formed of the same silica glass as the silica glass substrate or silica glass having the same refractive index, the core waveguide is not adversely affected by transmission loss and the film need not be removed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の製造工程を示す断面図であ
る。
FIG. 1 is a cross-sectional view showing a manufacturing process of an embodiment of the present invention.

【図2】石英ガラス膜を3μm以上に厚く形成したとき
のエッチング後のコア導波路の状態を示す断面図であ
る。
FIG. 2 is a cross-sectional view showing a state of a core waveguide after etching when a quartz glass film having a thickness of 3 μm or more is formed.

【図3】従来のガラス導波路の製造工程を示す断面図で
ある。
FIG. 3 is a cross-sectional view showing a manufacturing process of a conventional glass waveguide.

【図4】従来のガラス導波路の製造方法により得られた
ガラス導波路素子の平面図である。
FIG. 4 is a plan view of a glass waveguide device obtained by a conventional method for manufacturing a glass waveguide.

【符号の説明】[Explanation of symbols]

1 石英ガラス基板 2 コアガラス膜 3 コア導波路 4 クラッド層 5 欠け 6 石英ガラス膜(石英系ガラス膜) 1 quartz glass substrate 2 core glass film 3 core waveguide 4 clad layer 5 lack 6 quartz glass film (quartz glass film)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】石英ガラス基板上にコアガラス膜を形成
し、このコアガラス膜の表面を均一にするために、コア
ガラス膜上に薄膜の石英系ガラス膜を形成し、この石英
系ガラス膜及びコアガラス膜から不要な部分を除去して
コア導波路を形成し、このコア導波路が形成された石英
ガラス基板上にクラッド層を形成するようにしたことを
特徴とするガラス導波路の製造方法。
1. A core glass film is formed on a quartz glass substrate, and a thin silica glass film is formed on the core glass film in order to make the surface of the core glass film uniform. And a glass waveguide, characterized in that an unnecessary portion is removed from the core glass film to form a core waveguide, and a clad layer is formed on a quartz glass substrate on which the core waveguide is formed. Method.
【請求項2】上記石英系ガラス膜が、石英ガラスまたは
石英ガラスと同等な屈折率の石英系ガラスからなり、且
つその膜厚が3μm以下であることを特徴とする請求項
1記載のガラス導波路の製造方法。
2. The glass conductor according to claim 1, wherein the silica glass film is made of silica glass or silica glass having a refractive index equivalent to that of silica glass, and the film thickness is 3 μm or less. Waveguide manufacturing method.
JP19977394A 1994-08-24 1994-08-24 Method for manufacturing glass waveguide Pending JPH0862442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19977394A JPH0862442A (en) 1994-08-24 1994-08-24 Method for manufacturing glass waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19977394A JPH0862442A (en) 1994-08-24 1994-08-24 Method for manufacturing glass waveguide

Publications (1)

Publication Number Publication Date
JPH0862442A true JPH0862442A (en) 1996-03-08

Family

ID=16413380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19977394A Pending JPH0862442A (en) 1994-08-24 1994-08-24 Method for manufacturing glass waveguide

Country Status (1)

Country Link
JP (1) JPH0862442A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439749B1 (en) * 2002-07-29 2004-07-12 우리로광통신주식회사 Method for fabricating optical waveguide on fused silica substrates using inductively coupled plasma etcher

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439749B1 (en) * 2002-07-29 2004-07-12 우리로광통신주식회사 Method for fabricating optical waveguide on fused silica substrates using inductively coupled plasma etcher

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