JPH08699B2 - Synthesis of oxide fine particles by spray drying - Google Patents

Synthesis of oxide fine particles by spray drying

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Publication number
JPH08699B2
JPH08699B2 JP1050622A JP5062289A JPH08699B2 JP H08699 B2 JPH08699 B2 JP H08699B2 JP 1050622 A JP1050622 A JP 1050622A JP 5062289 A JP5062289 A JP 5062289A JP H08699 B2 JPH08699 B2 JP H08699B2
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Japan
Prior art keywords
phase
temperature
bismuth
fine particles
reaction
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JPH02229722A (en
Inventor
正信 淡野
弘義 高木
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工業技術院長
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  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Description

【発明の詳細な説明】 「産業上の利用分野」 本発明は、ビスマス系超電導体の微粒子原料合成法に
関するものである。
TECHNICAL FIELD The present invention relates to a method for synthesizing a fine particle raw material of a bismuth-based superconductor.

「従来技術及びその問題点」 ビスマス系超電導体はイットリウム系などに比べて臨
界温度Tcが約110Kと高く、例えば寒剤に液体窒素を用い
る場合の温度差を大きくとれることや、イットリウム系
が水分を含む雰囲気下では容易に分解してしまうのに対
して化学的安定性が高いなどの利点を有し、実用化研究
が進められている。
"Prior art and its problems" Bismuth-based superconductors have a high critical temperature Tc of about 110 K compared to yttrium-based superconductors, and can take a large temperature difference when liquid nitrogen is used as a cryogen, and yttrium-based liquid It has the advantage that it is easily decomposed in an atmosphere containing it, but it has high chemical stability, and is being researched for practical use.

しかし、ビスマス系の超電導相には現在分かっている
ところで、実用化が期待されるTc=約110Kを示すいわゆ
る高Tc相以外にも低Tc相(同80K)等があり、通常の合
成プロセスでは先ず低Tc相が生成し、これが分解した後
に、高Tc相が生成するとされており、一旦低Tc相の結晶
構造を強固なものにしてしまうと、高Tc相合成までに大
気中で数10〜数100時間を要し、高Tc相生成温度領域が
広がる低酸素分圧下(PO2=1/5〜1/13)でも10数〜数10
時間を要していた。また反応中間過程での液相生成に伴
う分相による組成の不均一化が生じやすく、一方、高Tc
相の生成のためには液相成分の関与した拡散反応が伴っ
ており、結晶粒成長が著しく、粒子径が数10〜数μmの
粗大な結晶粒子しか得られていなかった。このため焼結
体作成時の緻密化が困難で、加圧焼結等の方法により焼
結体密度を上げざるを得なかった。
However, in the currently known bismuth superconducting phase, there is a low Tc phase (80K in the same) other than the so-called high Tc phase showing Tc = about 110K that is expected to be put into practical use, and in the normal synthesis process It is said that a low Tc phase is generated first, and then a high Tc phase is generated after this is decomposed, and once the crystal structure of the low Tc phase is made strong, it will take several tens in the atmosphere until the high Tc phase is synthesized. ~ It takes several hundred hours, and even under low oxygen partial pressure (PO 2 = 1/5 to 1/13), where the high Tc phase generation temperature range spreads, 10 to several 10
It took time. In addition, compositional non-uniformity is likely to occur due to phase separation due to liquid phase formation in the middle of the reaction, while high Tc
The formation of the phase was accompanied by a diffusion reaction involving a liquid phase component, the crystal grain growth was remarkable, and only coarse crystal grains having a particle diameter of several tens to several μm were obtained. For this reason, it is difficult to densify the sintered body at the time of preparation, and it is unavoidable to increase the sintered body density by a method such as pressure sintering.

また固相法や蓚酸塩共沈法などこれまで広く用いられ
ている方法によると、低Tc相生成以前の段階で炭酸塩な
どが生成し、または残存し易く、これが超電導相合成温
度以下で液相を生成し、上述した組成の不均一化による
難分解性化合物の生成や粒成長を引き起こす原因となっ
ていた。
In addition, according to widely used methods such as the solid phase method and the oxalate coprecipitation method, carbonates and the like tend to be generated or remain in the stage before the formation of the low Tc phase. This has been a cause of the formation of a phase and the formation of a hardly decomposable compound and grain growth due to the nonuniform composition described above.

これらの理由により、高Tc相よりなり、かつ数μm以
下の粒子径を有する微粒子を合成することは不可能であ
った。このため、通常のセラミックス製造過程で必要と
される易焼結性の均質微粒子原料が得られず、常圧焼結
法によるバルクの密度向上並びに均質化が難しく、臨界
電流密度の向上に大きな障害となっていた。
For these reasons, it was impossible to synthesize fine particles having a high Tc phase and having a particle diameter of several μm or less. For this reason, it is not possible to obtain the easily sinterable homogeneous fine particle raw material required in the ordinary ceramics manufacturing process, and it is difficult to improve the bulk density and homogenize by the atmospheric pressure sintering method, which is a major obstacle to the improvement of the critical current density. It was.

「発明の概要」 本発明は、この問題を克服し、ビスマス系の高Tc相にお
いて、易焼結性の均質な微粒子原料を合成することを目
的とする。
[Summary of the Invention] The object of the present invention is to overcome this problem and to synthesize a bismuth-based high Tc phase and a fine particulate raw material that is easily sinterable.

本発明者は、噴霧乾燥法によるビスマス系超電導体の
均質微粒子の合成研究を行う過程で、生成した前駆体粉
末を低温から次第に温度を上げて仮焼していく通常の方
法では、800℃付近で複酸化物や炭酸塩に分相し易く、
これがさらに温度を上げると液相を生成するため、急激
な粒子成長や組成の不均一化を生じ、噴霧乾燥法により
調製した均質微粒子乾燥粉体の特性を損なう点や、800
〜835℃(大気中で)の温度範囲では低Tc相の結晶性が
高くなり、高Tc相が生成しにくくなる点に注目し、これ
らの現象が生じる温度域を極めて短時間に通過し、高Tc
相安定領域で熱分解〜結晶化を行うことにより分相や粒
成長などを生じることなく高Tc相が合成可能であること
を見いだした。また、均質性が高い前駆体から出発する
ことにより、途中過程での固相拡散による熱分解−結晶
化反応が容易に起こることを併せて検討することによ
り、本発明に到達した。
The present inventor, in the process of synthesizing homogeneous fine particles of a bismuth-based superconductor by the spray-drying method, the generated precursor powder is calcined by gradually increasing the temperature from a low temperature to about 800 ° C. It is easy to split into complex oxides and carbonates,
This causes a liquid phase to be generated when the temperature is further raised, which causes rapid particle growth and composition non-uniformity, which impairs the characteristics of the homogeneous fine particle dry powder prepared by the spray drying method.
In the temperature range of ~ 835 ℃ (in the air), the crystallinity of the low Tc phase becomes high, and it is difficult to generate the high Tc phase, and it passes through the temperature range where these phenomena occur in an extremely short time, High Tc
It was found that high Tc phase can be synthesized without causing phase separation or grain growth by conducting thermal decomposition to crystallization in the phase stable region. Further, the present invention has been reached by further studying that starting from a precursor having high homogeneity facilitates thermal decomposition-crystallization reaction due to solid phase diffusion in the course of the process.

すなわち本発明は、硝酸塩溶液の噴霧乾燥法により均
質性の高い前駆体の乾燥微粒子を調製し、これを所定の
温度に保った反応炉中への直接投入等の方法により,数
10秒〜1分程度の間に試料温度を835〜845℃(大気中)
の温度域に設定することにより、高Tc相を速やかに結晶
成長させ,組成の不均一化や粒成長を防いで、ビスマス
系超電導体高Tc相の均質微粒子を生成することを特徴と
する。以下に本発明を詳細に説明する。
That is, the present invention is to prepare precursor fine particles with high homogeneity by a spray drying method of a nitrate solution, and to directly charge the precursor fine particles into a reaction furnace kept at a predetermined temperature.
Sample temperature of 835-845 ℃ (in air) for 10 seconds to 1 minute
By setting the temperature range to, the high Tc phase is promptly crystal-grown to prevent the composition from becoming nonuniform and the grain growth to be generated, and the bismuth-based superconductor high Tc phase homogeneous fine particles are generated. The present invention will be described in detail below.

まず、ビスマス系で高Tc相が単一相として生成する前
述の組成範囲に、ビスマス、鉛、ストロンチウム、カル
シウム、銅各元素の組成比を調整した、硝酸塩溶液を調
製する。
First, a nitrate solution is prepared in which the composition ratio of each element of bismuth, lead, strontium, calcium, and copper is adjusted within the above composition range in which the high Tc phase is formed as a single phase in the bismuth system.

これを2流体ノズルなどを用いて200℃程度の高温空
気中に圧縮空気により噴霧し、瞬時に乾燥させて溶液中
における各成分元素の均質性を保持した、ミクロンオー
ダーの乾燥微粒子を作製する。
This is sprayed by compressed air into high temperature air of about 200 ° C. using a two-fluid nozzle or the like, and is instantaneously dried to prepare micron-order dry fine particles in which the homogeneity of each component element in the solution is maintained.

これを白金ルツボなどの容器に入れ、速やかに835〜8
45℃に設定した反応炉に設置するか、またはイメージ加
熱等の方法を用いて少なくとも約15℃/秒以上の昇温速
度で上記の温度域に設定する。そのまま1〜2時間焼成
することにより、図1に示すように低Tc相や絶縁体相等
のピークが殆どない、高Tc相より構成される粉体が得ら
れる。なお酸素分圧(PO2)が大気中より低い(PO2=1/
5〜1/13)場合、焼成温度は5〜15℃低下し、最適温度
範囲は若干拡大する。溶液濃度が0.01mol/lの時、粒子
は図2に示すように平均粒子径1〜3μm程度であり、
さらに溶液濃度を減少させることにより、1μm以下の
粒子を得ることも可能である。
Place this in a container such as a platinum crucible and immediately
It is installed in a reaction furnace set at 45 ° C, or is set in the above temperature range at a heating rate of at least about 15 ° C / sec or more by using a method such as image heating. By firing as it is for 1 to 2 hours, a powder composed of a high Tc phase having almost no peaks of a low Tc phase or an insulator phase as shown in FIG. 1 can be obtained. The oxygen partial pressure (PO 2 ) is lower than in the atmosphere (PO 2 = 1 /
In the case of 5 to 1/13), the firing temperature is lowered by 5 to 15 ° C and the optimum temperature range is slightly expanded. When the solution concentration is 0.01 mol / l, the particles have an average particle size of about 1 to 3 μm as shown in FIG.
It is also possible to obtain particles of 1 μm or less by further reducing the solution concentration.

以下、各プロセスにおける要点を説明する。 The main points in each process will be described below.

の硝酸塩溶液の組成範囲は、現在のところビスマス
系超電導体高Tc相の単一相を得られるとされる前述の組
成とする。ただし組成条件の変化により、鉛等の揮発成
分の挙動による仕込組成比からの変化など不明確な点も
存在する。試料溶液としては硝酸塩溶液の他にクエン酸
塩等の有機酸塩溶液や蓚酸塩等の共沈澱スラリー溶液等
も考えられるが、噴霧乾燥後の熱分解過程で炭酸塩等の
中間化合物を生成しやすくなるので、ここでは硝酸塩溶
液に限定した。のプロセスでは、硝酸塩の乾燥粒子は
室温では非常に吸湿性に富むことを考慮して、噴霧乾燥
中は捕集チャンバーをヒーターで加熱する必要がある。
得られた乾燥粒子は速やかに次のプロセスで処理するか
または真空デシケータ等で保存する必要がある。で
は、試料をできるだけ急速に835〜845℃(大気中)の温
度域に保つ必要があるので、例えば容量の大きな電気炉
を用い、白金ルツボなど熱伝導性が高く試料との反応性
の小さい容器に粉体のまま設置し、これを上記の温度域
に速やかに設置する。数10秒で所定の温度に達するので
そのまま熱分解−結晶化を行わせる。この系は高Tc相の
結晶化温度と融点が近いので、液相生成による粒成長を
抑制するため温度制御は高精度を要求される。1〜2時
間の保持により図1に示す結晶相の状態となる。冷却過
程は高Tc相の分解を抑制するため、炉中冷却よりも急速
な降温条件で行うことが望ましい。
The composition range of the nitrate solution of is the above-mentioned composition which is said to be capable of obtaining a single phase of bismuth-based superconductor high Tc phase at present. However, due to changes in composition conditions, there are uncertain points such as changes from the feed composition ratio due to the behavior of volatile components such as lead. As the sample solution, in addition to nitrate solutions, organic acid salt solutions such as citrate and co-precipitation slurry solutions such as oxalate may be considered, but intermediate compounds such as carbonates are generated in the thermal decomposition process after spray drying. Since it becomes easier, the nitrate solution is limited here. In this process, it is necessary to heat the collection chamber with a heater during spray drying, considering that the dried particles of nitrate are very hygroscopic at room temperature.
The obtained dry particles need to be immediately processed in the next process or stored in a vacuum desiccator or the like. In this case, since it is necessary to keep the sample in the temperature range of 835 to 845 ° C (in the air) as quickly as possible, use an electric furnace with a large capacity, for example, a platinum crucible and a container with high thermal conductivity and small reactivity with the sample. Place the powder as it is, and quickly place it in the above temperature range. A predetermined temperature is reached in a few tens of seconds, so that pyrolysis-crystallization is performed as it is. Since this system has a melting point close to the crystallization temperature of the high Tc phase, the temperature control is required to be highly accurate in order to suppress grain growth due to liquid phase formation. The crystal phase shown in FIG. 1 is obtained by holding for 1 to 2 hours. Since the cooling process suppresses the decomposition of the high Tc phase, it is desirable that the cooling process be performed under a temperature lowering condition than the in-furnace cooling.

従来の方法では、例えば約200℃/時間の昇温速度の
場合、反応過程は、前駆体→中間相→半導体相→低Tc相
→高Tc相という経路を経るため、分解−合成反応を繰り
返すことにより、かつその過程で組成の不均一化を生じ
ることにより、長時間の反応時間を必要としている。
In the conventional method, for example, when the heating rate is about 200 ° C./hour, the reaction process goes through the route of precursor → intermediate phase → semiconductor phase → low Tc phase → high Tc phase, and therefore the decomposition-synthesis reaction is repeated. Therefore, a long reaction time is required because the composition becomes non-uniform in the process.

本願発明では、昇温速度を高めることにより、高Tc相
生成までの途中過程で生じる反応相が十分に結晶化する
のを妨げることにより、分解反応を容易にするものであ
る。その結果、次段階の反応が容易に生じる。例えば昇
温速度を約1℃/秒程度にした場合は、半導体相までの
中間反応相生成は抑制されるが、低Tc相生成段階で十分
に結晶化が進行してしまうため、低Tc相の分解→高Tc相
の生成が阻害されることになる。
In the present invention, the decomposition reaction is facilitated by increasing the heating rate to prevent sufficient crystallization of the reaction phase generated in the course of forming the high Tc phase. As a result, the next step reaction easily occurs. For example, when the heating rate is set to about 1 ° C./sec, the formation of the intermediate reaction phase up to the semiconductor phase is suppressed, but the crystallization progresses sufficiently at the low Tc phase generation stage, so the low Tc phase -> Decomposition of high Tc phase will be inhibited.

本願発明のように約15℃/秒の昇温速度とした場合
は、低Tc相の生成反応と、(低Tc相の分解反応による)
高Tc相の生成反応が同時平行的に生じる温度条件にある
ため、高Tc相の生成反応が効率的に進行する結果、本願
発明にあるような効果が得られるものである。
When the heating rate of about 15 ° C./second is used as in the present invention, the low Tc phase generation reaction and (due to the decomposition reaction of the low Tc phase)
Since the production reaction of the high Tc phase is under the temperature condition in which the production reactions of the high Tc phase occur simultaneously in parallel, the production reaction of the high Tc phase efficiently progresses, and as a result, the effect as in the present invention is obtained.

但し、このような反応過程を生ぜしめる前提条件とし
て、固相拡散反応の促進のために前駆体物質の高均質性
が必要であり、で用いる原料としては、及びで挙
げたような方法を用いることを必要とする。
However, as a precondition for producing such a reaction process, a high homogeneity of the precursor substance is required to promote the solid phase diffusion reaction, and as the raw material used in, the method described in and is used. Need that.

「実施例」 次に実施例を挙げて本発明を説明する。"Example" Next, an example is given and the present invention is explained.

Bi:Pb:Sr:Ca:Cu=1.84:0.34:1.91:2.03:3.06の組成比
に調製した硝酸塩溶液(溶液濃度:0.01mol/l)を次の条
件で噴霧乾燥した。乾燥チャンバー入口温度195℃、出
口温度90℃、噴霧圧力1.2kgf/cm2、サイクロン吸引量0.
45m3/min、試料供給量10cm3/min。得られた乾燥粉末を
真空中で24時間乾燥した後、白金ルツボに封入し、842
℃の大型管状炉中に設置、平均17℃/秒で昇温し、90分
焼成後炉外へ取り出した。得られた粉体はほぼ高Tc相単
相のX線回折パターンを示し、平均粒子径約1.8μmの
板状粒子となった。この原料微粒子を用いて2t/cm2の圧
力で成形体を作成し、845℃12時間焼結(途中で再度冷
間プレスを行う)させることにより、Tc=105Kの焼結体
が得られた。焼結体の密度は5.95g/cm3で理論密度の90
%以上であった。
A nitrate solution (solution concentration: 0.01 mol / l) prepared in a composition ratio of Bi: Pb: Sr: Ca: Cu = 1.84: 0.34: 1.91: 2.03: 3.06 was spray-dried under the following conditions. Drying chamber inlet temperature 195 ° C, outlet temperature 90 ° C, spraying pressure 1.2 kgf / cm 2 , cyclone suction amount 0.
45m 3 / min, sample supply rate 10cm 3 / min. The dried powder thus obtained was dried in a vacuum for 24 hours and then enclosed in a platinum crucible,
It was installed in a large tubular furnace at ℃, heated at an average of 17 ℃ / sec, baked for 90 minutes and taken out of the furnace. The obtained powder showed an X-ray diffraction pattern of a high Tc phase single phase, and became plate-like particles having an average particle diameter of about 1.8 μm. A compact with a pressure of 2 t / cm 2 was formed using the raw material fine particles, and sintered at 845 ° C. for 12 hours (cold pressing again during the process) to obtain a sintered compact with Tc = 105K. . The density of the sintered body is 5.95 g / cm 3, which is 90 of the theoretical density.
% Or more.

【図面の簡単な説明】[Brief description of drawings]

図1:本発明により得られた、高Tc相を示すビスマス系超
電導体微粒子のX線回折パターン(大気中で842℃90分
焼成。図中の“(0011)”などは高Tc相で指数付けされ
た各ピークの面指数を示す)。 図2:本発明により得られた、ビスマス系超電導体高Tc相
微粒子の、走査電子顕微鏡像による粒子構造の写真(溶
液濃度0.01mol/l、842℃90分焼成)。
Fig. 1: X-ray diffraction pattern of bismuth-based superconductor particles showing a high Tc phase obtained by the present invention (calcined at 842 ° C for 90 minutes in the atmosphere. "(0011)" in the figure is an index for high Tc phase. The surface index of each peak is shown). FIG. 2: Photograph of the particle structure of a bismuth-based superconductor high Tc phase fine particle obtained by the present invention by a scanning electron microscope image (solution concentration 0.01 mol / l, 842 ° C. 90 minutes baking).

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ビスマス、鉛、ストロンチウム、カルシウ
ム、銅よりなるビスマス系超電導体において、(Bi,P
b):Sr:Ca:Cu:=2:2:2:3前後の,臨界温度Tc=約110Kの
結晶相(いわゆる高Tc相)を得られるとされる所定の組
成比、すなわち一般式BiUPbUSrWCaXCuYOZにおいて、 1.4 ≦ u ≦ 1.9 0.1 ≦ v ≦ 0.8 1.8 ≦ w ≦ 2.0 1.95 ≦ x ≦ 2.3 3.0 ≦ y ≦ 3.3 の陽イオン組成比よりなる硝酸塩溶液を噴霧乾燥し、得
られる乾燥粉体を15℃/秒以上の昇温速度で急速に加熱
することにより、大気中で835〜845℃まで試料温度を急
速に上昇させ、さらに同温度での1〜2時間以内の熱処
理によって、ほとんどTc=110K級の超電導体(高Tc相)
の結晶構造よりなり、かつ数μm〜1μm以下の粒子径
を示す粉体を得る、ビスマス系高温超電導セラミックス
微粒子の合成法。
1. A bismuth-based superconductor composed of bismuth, lead, strontium, calcium, and copper, wherein (Bi, P
b): Sr: Ca: Cu: = around 2: 2: 2: 3 with a predetermined composition ratio, that is, a crystalline phase with a critical temperature Tc = about 110 K (so-called high Tc phase), that is, the general formula Bi U Pb U Sr W Ca X Cu Y O Z spray-dried a nitrate solution having a cation composition ratio of 1.4 ≤ u ≤ 1.9 0.1 ≤ v ≤ 0.8 1.8 ≤ w ≤ 2.0 1.95 ≤ x ≤ 2.3 3.0 ≤ y ≤ 3.3 Then, by rapidly heating the obtained dry powder at a temperature rising rate of 15 ° C / sec or more, the sample temperature is rapidly increased to 835 to 845 ° C in the atmosphere, and the temperature is further maintained for 1 to 2 hours. Almost Tc = 110K class superconductor (high Tc phase) by heat treatment within
A method for synthesizing bismuth-based high-temperature superconducting ceramic fine particles, which comprises powder having the crystal structure of 1 and having a particle diameter of several μm to 1 μm or less.
JP1050622A 1989-03-02 1989-03-02 Synthesis of oxide fine particles by spray drying Expired - Lifetime JPH08699B2 (en)

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JP2855869B2 (en) * 1991-03-20 1999-02-10 住友電気工業株式会社 Method for producing bismuth-based oxide superconducting wire
US5395821A (en) * 1992-10-30 1995-03-07 Martin Marietta Energy Systems, Inc. Method of producing Pb-stabilized superconductor precursors and method of producing superconductor articles therefrom
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