JPH08712B2 - Optical glass - Google Patents
Optical glassInfo
- Publication number
- JPH08712B2 JPH08712B2 JP2413885A JP41388590A JPH08712B2 JP H08712 B2 JPH08712 B2 JP H08712B2 JP 2413885 A JP2413885 A JP 2413885A JP 41388590 A JP41388590 A JP 41388590A JP H08712 B2 JPH08712 B2 JP H08712B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- scattering peak
- peak intensity
- laser
- synthetic silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Lasers (AREA)
- Glass Compositions (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、主として高出力光に使
用される光学ガラスに係り、特にYAG(1064n
m),Arレーザ(350〜515nm),KrF(248n
m)若しくはArF(193nm)エキシマレーザ光その他の
高出力レーザに使用される光学ガラスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical glass mainly used for high power light, and particularly to YAG (1064n).
m), Ar laser (350 to 515 nm), KrF (248n
m) or ArF (193 nm) excimer laser light and other optical glass used for high-power lasers.
【0002】[0002]
【従来の技術】近年、エキシマレーザその他の高出力レ
ーザは、LSI製造のためのリソグラフィー技術、光化
学反応を利用する技術、切断研削の為の加工技術、レー
ザ核融合技術に利用されるものとして注目を集めてい
る。そしてこの種の高出力レーザを透過、伝送、屈折、
反射、吸収、干渉させる為のレンズ、プリズム、フィル
ター等としてシリカガラス光学体の適用が試みられてい
る。 しかしながら、前記各種オプテイクスを構成する
シリカガラスに、略700〜600nmの可視波長域の光
が作用した場合、又略360nmから略160nmの紫外波
長域の光が作用した場合は、特にガラスの構造上ダメー
ジを受けやすい。2. Description of the Related Art In recent years, excimer lasers and other high-power lasers have been attracting attention as being used in lithography technology for manufacturing LSI, technology utilizing photochemical reaction, processing technology for cutting and grinding, and laser nuclear fusion technology. Are gathering. And this kind of high power laser is transmitted, transmitted, refracted,
Attempts have been made to apply silica glass optical bodies as lenses, prisms, filters, etc. for reflection, absorption, and interference. However, when the light in the visible wavelength range of about 700 to 600 nm acts on the silica glass constituting the various optics, or when the light in the ultraviolet wavelength range of about 360 nm to about 160 nm acts, the structure of the glass is particularly important. It is easily damaged.
【0003】なぜならば高出力レーザが長時間照射され
るといわゆるNBOHC(ノンブリッジ、オキシジェ
ン、ホール、センター)と呼ばれる略630nmの吸収バ
ンド、及びE’センターと呼ばれる略215nmの吸収バ
ンドと、別の略260nm吸収バンドが生成し、この結果
略750〜500nm及び略360nmから略160nmの紫
外線の透過率を低下させ、光学特性を劣化させてしま
う。従って、シリカガラスを前記波長域における高出力
レーザに対して耐久性を向上させることは構造上極めて
困難である。This is because when a high-power laser is irradiated for a long time, an absorption band of about 630 nm called so-called NBOHC (non-bridge, oxygen, hole, center) and an absorption band of about 215 nm called E'center are different from each other. An absorption band of about 260 nm is generated, and as a result, the transmittance of ultraviolet rays of about 750 to 500 nm and about 360 nm to about 160 nm is lowered, and the optical characteristics are deteriorated. Therefore, it is structurally extremely difficult to improve the durability of silica glass against a high-power laser in the above wavelength range.
【0004】更に、特に略250nm以下の短紫外域にお
けるKrF若しくはArFエキシマレーザは、他の紫外
光に比較して最も強いエネルギーを持っており、該エキ
シマレーザの照射により前記シリカガラスは一層強い光
学的ダメージを受けやすいことが確認されている。Furthermore, the KrF or ArF excimer laser in the short ultraviolet region of about 250 nm or less has the strongest energy as compared with other ultraviolet light, and the silica glass is irradiated with the stronger optical energy by the irradiation of the excimer laser. It has been confirmed that it is easily damaged.
【0005】そこで本発明者等は、シリカガラスに対す
る高出力レーザ照射による光学特性劣化、特に透過率低
下を抑制する為に全方向脈理フリー、屈折率変動幅△n
が2×10-6以下である高純度高均質性の合成シリカガラ
ス体(商品名SUPRASIL-P10、信越石英株式会社製)を用
いて耐レーザ性光学部材を形成したが好ましい効果が得
られなかった。Therefore, the inventors of the present invention, in order to suppress the deterioration of the optical characteristics of the silica glass due to the high-power laser irradiation, in particular, the reduction of the transmittance, are free of striae in all directions, and the refractive index fluctuation width Δn.
Is less than 2 × 10 -6 , a laser-resistant optical member was formed using a high-purity, highly-homogeneous synthetic silica glass body (trade name: SUPRASIL-P10, manufactured by Shin-Etsu Quartz Co., Ltd.), but no favorable effect was obtained It was
【0006】その理由を分析してみるに、高出力レーザ
用シリカガラス体は高純度と高均質性を前提とするもの
であるために、合成シリカガラス、特に透明合成シリカ
ガラス以外を用いる事ができないが、酸水素炎加水分解
法若しくはCVDスート法いずれで製造する場合でも合成
シリカガラスは短時間で而も酸水素炎を用いて高温合成
を行なうために、平衡化反応が十分行なわれず構造的に
は充分安定とは言えない。An analysis of the reason is that the silica glass body for high-power laser is premised on high purity and high homogeneity, and therefore synthetic silica glass, especially transparent synthetic silica glass, may be used. However, no matter how the oxyhydrogen flame hydrolysis method or the CVD soot method is used, synthetic silica glass undergoes high-temperature synthesis using an oxyhydrogen flame in a short time, so the equilibration reaction does not sufficiently occur Is not stable enough.
【0007】そこで前記合成シリカガラス体を出発母材
とし、該ガラス体中に水素ガスをドープする事により特
に略250nm以下の短紫外域エキシマレーザの照射におけ
る光学的ダメージを大幅に低減する技術(特願平1-1452
26)、言換えれば水素ドープ等により前記ガラス組織の
補修を行なった技術を開示されている。[0007] Therefore, by using the synthetic silica glass body as a starting material and doping the glass body with hydrogen gas, a technique for significantly reducing the optical damage particularly when irradiated with a short ultraviolet excimer laser of about 250 nm or less ( Japanese patent application 1-1452
26), in other words, a technique of repairing the glass structure by hydrogen doping or the like is disclosed.
【0008】更に本発明者等は、高純度高均質性の合成
シリカガラス(商品名SUPRASIL−P10、信越
石英株式会社製)を出発母材として、該母材中に紫外線
レーザ照射による光透過率を抑制するのに充分な量のア
ルゴンその他の希ガスを含有させた技術も提案してい
る。(特願平2ー184048号)。Further, the inventors of the present invention used a synthetic silica glass of high purity and high homogeneity (trade name SUPRASIL-P10, manufactured by Shin-Etsu Quartz Co., Ltd.) as a starting base material, and light transmittance of the base material by irradiation with an ultraviolet laser. A technique in which a sufficient amount of argon or other rare gas is contained to suppress the above is also proposed. (Japanese Patent Application No. 2-184048).
【0009】[0009]
【発明が解決しようとする課題】しかしながら前記いず
れの技術もあくまでも不安定構造の存在を前提とする対
処療法であり、必ずしも基本的な解決につながらないの
みならず、前記したようにドープ可能な厚みに制限を受
け、特に前記の様に熱処理により形成されるシリカガラ
ス体にあっては表面を研削する必要が有るために、一層
薄層化してしまい、厚肉のプリズムやレンズ等の製作が
困難である。However, none of the above techniques is a coping therapy that assumes the existence of an unstable structure, and does not necessarily lead to a basic solution. There is a restriction, and especially for the silica glass body formed by heat treatment as described above, it is necessary to grind the surface, so the layer becomes thinner, and it is difficult to manufacture thick prisms and lenses. is there.
【0010】本発明はかかる従来技術の欠点に鑑み、合
成シリカガラスを用いつつも該シリカガラスに所定の熱
処理を加えてガラス構造の組かえ安定化を図り、これに
より耐高出力レーザ性の向上とともに光学ガラス自体の
特性の向上を図る事を目的とするものである。In view of the above-mentioned drawbacks of the prior art, the present invention uses a synthetic silica glass while subjecting the silica glass to a predetermined heat treatment to stabilize the glass structure, thereby improving the high output laser resistance. At the same time, the purpose is to improve the characteristics of the optical glass itself.
【0011】[0011]
【課題を解決すための手段】本発明は合成シリカガラス
特に透明合成シリカガラスを用いる事を前提とするもの
である。けだし前記したように耐レーザ性を得るには高
純度高均質且つ透明である事が必要でありこの様な条件
は合成シリカガラス以外では得る事が出来ない。The present invention is premised on the use of synthetic silica glass, especially transparent synthetic silica glass. As described above, in order to obtain laser resistance, it is necessary to have high purity, high homogeneity and transparency, and such a condition cannot be obtained except for synthetic silica glass.
【0012】しかしながら前記したように合成シリカガ
ラスは短時間で高温合成を行なうために、平衡化反応が
十分行なわれず構造的には充分安定とは言えない。そこ
で本発明者はこの構造の不安定化の原因を検討する為
に、合成シリカガラスの構造を検討したところ、合成シ
リカガラスは構造的に不安定な三員環及び四員環構造の
ガラス組織を多く含む事を知見した。However, as described above, since synthetic silica glass is synthesized at a high temperature in a short time, the equilibration reaction is not sufficiently performed and it cannot be said that it is structurally sufficiently stable. Therefore, the present inventor examined the structure of synthetic silica glass in order to investigate the cause of the destabilization of this structure. As a result, the synthetic silica glass showed a structurally unstable glass structure of a three-membered ring and four-membered ring structure. It was found that many are included.
【0013】そして、このガラス組織の違いと耐レーザ
性についてレーザラマン法で確認したところ、495cm-1
及び606cm-1散乱ピーク強度の強いものは耐レーザ性に
劣るとの相関があることが知見された。そこで本発明は
このような不安定構造である三及び四員環構造を低減さ
せ、六員環構造等の安定結合の割合を増加させて耐レー
ザ性その他の光学特性を向上させた点にある。Then, the difference in the glass structure and the laser resistance were confirmed by the laser Raman method, and found to be 495 cm -1.
It was found that those having a strong peak intensity of 606 cm −1 and 606 cm −1 had a poor laser resistance. Therefore, the present invention is to reduce the unstable three- and four-membered ring structures and increase the proportion of stable bonds such as the six-membered ring structure to improve laser resistance and other optical characteristics. .
【0014】R1:前記ガラス体のレーザラマンによる
495cm −1 散乱ピーク強度(I 1 )とケイ素と酸素
との間の基本振動である800cm −1 散乱ピク強度
(I 0 )との強度比で、下記(1)式で表わす。 R2:前記ガラス体のレーザラマンによる606cm
−1 散乱ピーク強度(I 2 )とケイ素と酸素との間の基
本振動である800cm −1 散乱ピーク強度(I 0 )と
の強度比で、下記(2)式で表わす。 R1=I 1 /I 0 …(1) R2=I 2 /I 0 …(2) (定義) I1:495cm−1散乱ピーク強度 I2:606cm−1散乱ピーク強度 I0:800cm−1散乱ピーク強度 R1: by laser Raman of the glass body
495 cm −1 scattering peak intensity (I 1 ) and silicon and oxygen
800 cm −1 scattered peak intensity, which is the fundamental vibration between
The intensity ratio with (I 0 ) is represented by the following formula (1). R2: 606 cm by laser Raman of the glass body
-1 Scattering peak intensity (I 2 ) and group between silicon and oxygen
800 cm −1 scattering peak intensity (I 0 ) which is the main vibration and
Is expressed by the following formula (2). R1 = I 1 / I 0 ... (1) R2 = I 2 / I 0 ... (2) ( Definition) I 1: 495cm -1 scattering peak intensity I 2: 606 cm -1 scattering peak intensity I 0: 800 cm -1 scattering Peak intensity
【0015】一方前記三及び四員環構造の低減は前記し
た塊状の高純度透明合成シリカガラスを軟化点(160
0℃)以上の温度で、500Kgf/cm 2 以上、好ま
しくは2000Kgf/cm 2 の圧力で再溶融処理を行
う。この場合、特に耐レーザ用光学ガラスとして用いる
場合は、ドープ可能な稀ガス高圧雰囲気下で加熱して再
溶融するのが好ましく、該再溶融状態を所定時間維持す
る事により行なわれ、これにより前記ガラス組織中で平
衡反応が繰返し行なわれ、不安定結合である三及び四員
環構造が低減し、六員環構造等の安定結合に移行させる
事が出来る。この場合前記再溶融は高圧雰囲気下,より
具体的には2000Kgf/cm 2 程度の高圧雰囲気下
で行なうのが好ましいが、再溶融圧力が500Kgf/
cm 2 以上でも所定の耐レーザ性を得る事が出来る。On the other hand, the reduction of the three- and four-membered ring structure is caused by the softening point (160) of the above-mentioned massive high-purity transparent synthetic silica glass.
0 ° C) or higher, 500 Kgf / cm 2 or higher, preferably
Remelting is performed at a pressure of 2000 Kgf / cm 2.
U. In this case, it is used especially as an optical glass for laser resistance.
In case of rare gas that can be doped, reheat by heating in high pressure atmosphere.
It is preferably melted, and it is carried out by maintaining the re-melted state for a predetermined time, whereby the equilibrium reaction is repeatedly carried out in the glass structure and the three and four-membered ring structure which is an unstable bond is reduced, It can be transferred to a stable bond such as a member ring structure. In this case, the remelting is preferably performed in a high pressure atmosphere, more specifically in a high pressure atmosphere of about 2000 Kgf / cm 2, but the remelting pressure is 500 Kgf / cm 2.
Even if it is cm 2 or more, a predetermined laser resistance can be obtained.
【0016】一方前記三及び四員環構造の低減は前記し
た塊状の高純度透明合成シリカガラスをドープ可能な稀
ガス高圧雰囲気下で加熱して再溶融し,該再溶融状態を
所定時間維持する事により行なわれ、これにより前記ガ
ラス組織中で平衡反応が繰返し行なわれ、不安定結合で
ある三及び四員環構造が低減し、六員環構造等の安定結
合に移行させる事が出来る。この場合前記再溶融は高圧
雰囲気下,より具体的には2000Kg/cm2程度の高圧雰囲気
下で行なうのが好ましいが、再溶融圧力が500Kg/cm2以
上でも所定の耐レーザ性を得る事が出来る。On the other hand, the reduction of the three- and four-membered ring structure is carried out by heating the above-mentioned massive high-purity transparent synthetic silica glass in a high-pressure atmosphere of a rare gas that can be doped to re-melt and maintain the re-melted state for a predetermined time. By this, the equilibrium reaction is repeatedly carried out in the glass structure, the three and four-membered ring structure which is an unstable bond is reduced, and a stable bond such as a six-membered ring structure can be transferred. In this case, the remelting is preferably performed in a high pressure atmosphere, more specifically, in a high pressure atmosphere of about 2000 kg / cm 2 , but even if the remelting pressure is 500 kg / cm 2 or more, a predetermined laser resistance may be obtained. I can.
【0017】さて前記再溶融は高圧雰囲気下で行なわれ
る為に、ガラス組織の密度も向上し、前記三及び四員環
構造の低減と合せてガラス体の波長588nmにおける絶
対屈折率ndを上昇させる事が出来る。即ち、絶対屈折率
の向上は、Si原子とO原子間の結合力の弱い三及び四員
環構造を低減と表裏一体をなしつつ前記両原子で構成さ
れるガラス網目構造の密度を高める事が出来、この点で
も好ましい光学特性と耐レーザ性を得る事が出来る。Since the remelting is performed in a high pressure atmosphere, the density of the glass structure is also improved, and the absolute refractive index n d of the glass body at a wavelength of 588 nm is increased together with the reduction of the three- and four-membered ring structure. You can That is, the improvement of the absolute refractive index is to increase the density of the glass network structure composed of both atoms while reducing the three- and four-membered ring structure with weak bonding force between the Si atom and the O atom and integrating the two sides. Also in this respect, preferable optical characteristics and laser resistance can be obtained.
【0018】一方、前記再溶融は一般に希ガス若しくは
窒素ガス等の不活性ガス雰囲気下で行われるが、窒素ガ
スを用いてガスドープを行うと、(特に前記光学ガラス
を耐レーザガラスに用いた場合において)例え前記ガラ
ス構造の安定化と高密度化を図っても後記実施例に示す
ようにガラス中に何らかのチッ素化合物が生成してレー
ザ透過率低下が起こりやすく、従って耐レーザ性特にA
rの耐レーザ性の面で希ガスドープは必須要件である。On the other hand, the remelting is generally performed in an atmosphere of an inert gas such as a rare gas or nitrogen gas. However, when gas doping is performed using nitrogen gas (especially when the optical glass is used as a laser resistant glass). Even if the glass structure is stabilized and densified, some nitrogen compounds are likely to be formed in the glass to cause a decrease in the laser transmittance, as shown in the examples below.
In terms of r laser resistance, rare gas doping is an essential requirement.
【0019】尚、前記再溶融したガラス体について水素
ガス濃度を調べてみると、厚肉のガラス体であっても水
素ガスが内部域まで存在している事が知見された。その
理由についてはさだかでないが、合成シリカガラスの製
造過程でプロトン(H+)等の水素元素を含むガラス体を
高圧力下で再溶融する事により該ガラス組織に緩やかに
結合しているプロトン(H+)やOH基若しくはH2Oが分離
され、更にその溶融体中にその雰囲気ガスである希ガス
が拡散されることにより該希ガスがガラス網目構造のす
き間に入り込み、合成時に生成した酸素ガスを外部へ脱
ガスされつつ、前記生成水素分子が前記ガラス組織中に
生成/含有させる事が可能となるものと推定される。When the hydrogen gas concentration of the remelted glass body was examined, it was found that hydrogen gas existed up to the internal region even in a thick glass body. The reason for this is not obvious, but in the process of producing the synthetic silica glass, a glass body containing a hydrogen element such as a proton (H + ) is remelted under a high pressure so that the protons gently bound to the glass structure ( H + ), OH groups or H 2 O are separated, and the rare gas, which is the ambient gas, is diffused into the melt, whereby the rare gas enters the gap of the glass network structure and oxygen generated during synthesis is generated. It is presumed that the generated hydrogen molecules can be generated / contained in the glass structure while the gas is degassed to the outside.
【0020】従って、本発明の三及び四員環構造を低減
する工程において同時にガラス体に水素ガスの生成と希
ガスのドープが可能となり、これが耐レーザ性の向上に
つながる。Therefore, in the step of reducing the three- and four-membered ring structure of the present invention, it becomes possible to generate hydrogen gas and dope rare gas into the glass body at the same time, which leads to improvement of laser resistance.
【0021】この場合、耐紫外線レーザ性を効果的に達
成するには前記シリカガラス体中に5×1017(molecule
/cm3・glass)以上の水素分子を含有させるとよく、又希
ガスは前記ガラス中からの真空下1000℃における希
ガス放出量を1×1018atoms/m2以上に設定するとよ
い。In this case, in order to effectively achieve the ultraviolet laser resistance, 5 × 10 17 (molecule
/ cm 3 · glass) or more hydrogen molecules, and the rare gas is preferably set so that the amount of rare gas released from the glass at 1000 ° C. under vacuum is 1 × 10 18 atoms / m 2 or more.
【0022】[0022]
【実施例】原料四塩化ケイ素を蒸留処理して不純物を除
去させた高純度の四塩化ケイ素原料を用いて酸水素炎加
水分解法の直接火炎法(以下ダイレクト法という)に
て、高純度シリカガラスインゴットを複数個合成する。[Examples] High-purity silica obtained by direct flame method of oxyhydrogen flame hydrolysis method (hereinafter referred to as direct method) using high-purity silicon tetrachloride raw material obtained by subjecting raw material silicon tetrachloride to distillation treatment to remove impurities A plurality of glass ingots are synthesized.
【0023】次にこれらのインゴットを一定の直径の棒
状体に延伸した後、横型浮遊帯域融解法 (FZ法) により
混練り均質化し、三方向における脈理が認められず且つ
光使用領域(クリヤ−アパ−チャ−)における屈折率変
動幅 (Δn)を 2×10-6以下に抑えたシリカガラス体を切
断、研削加工して直径100φ×h100mmの試験片を数個作
成する。(以下第1試験片という)Next, these ingots were drawn into rod-shaped bodies having a constant diameter, and then kneaded and homogenized by a horizontal floating zone melting method (FZ method), striae were not recognized in three directions, and a light use region (clear) was used. -Cut and grind a silica glass body whose refractive index fluctuation range (Δn) in the aperture is 2 × 10 -6 or less to prepare several test pieces with a diameter of 100φ × h 100 mm. (Hereinafter referred to as the first test piece)
【0024】そして前記第1試験片について、水素分子
測定用サンプルとして寸法5×10×20mm でかつ 3面を
鏡面仕上したものを作成してレ−ザラマン散乱測定法に
よる水素分子濃度測定を行う。即ち該測定方法は、前記
サンプルをセットした後Arレ−ザ(488nm) で照射し4135
(cm-1)と800(cm-1) の散乱光の強度比よりガス濃度を計
算する。(V.S.Khotimchenko,et.al. Zhurnal Prikladno
i Spektroskopii,Vol.46, No.6, PP.987〜991,1986) こ
の測定によれば、均質化処理後のダイレクト法によるサ
ンプルの水素濃度はいずれも5×1016(molecules/cm3)
未満であった。For the first test piece, a sample for measuring hydrogen molecules having a size of 5 × 10 × 20 mm and three mirror-finished surfaces is prepared, and the hydrogen molecule concentration is measured by the laser Raman scattering measuring method. That is, the measurement method was such that after setting the sample, irradiation with an Ar laser (488 nm) was performed.
The gas concentration is calculated from the intensity ratio of scattered light at (cm -1 ) and 800 (cm -1 ). (VSKhotimchenko, et.al.Zhurnal Prikladno
i Spektroskopii, Vol.46, No.6, PP.987-991, 1986) According to this measurement, the hydrogen concentration of the sample by the direct method after the homogenization treatment was 5 × 10 16 (molecules / cm 3 )
Was less than.
【0025】次に前記第1試験片を白金ーロジウム製坩
堝に入れ、熱間等方圧加圧法(HIP処理法)により、
アルゴンガス100%の2000Kg/cm2の高圧雰囲気で、1750
℃にの温度に3hr維持して再溶融した後、第1図の温度
/圧力曲線に基づいて徐冷速度をほぼ100℃/hrに維持
して900℃まで徐冷しつつ及び減圧速度を前記徐冷速度
に対応させて50〜100Kg/cm2・hrにて1300Kg/cm2まで降
圧する。そして1300Kg/cm2の圧力を維持した状態で前
記熱処理温度が200℃に低下するのをまち、該低下した
後暫くして徐々に放圧する。又加熱温度においても、前
記900℃まで徐冷した後そのまま自然放冷を行なう。
(実施例1)Next, the first test piece was placed in a platinum-rhodium crucible and subjected to a hot isostatic pressing method (HIP processing method).
1750 in a high-pressure atmosphere of 2000 kg / cm 2 with 100% argon gas
After re-melting at a temperature of ℃ for 3 hours, the slow cooling rate was maintained at about 100 ° C / hr based on the temperature / pressure curve of Fig. 1 while gradually cooling to 900 ° C and the depressurization rate was set to the above. to correspond to slow cooling speed stepped down to 1300 kg / cm 2 at 50~100Kg / cm 2 · hr to. Then, while the pressure of 1300 kg / cm 2 is maintained, the heat treatment temperature is lowered to 200 ° C., and after the temperature is lowered, the pressure is gradually released for a while. Also at the heating temperature, the material is gradually cooled to 900 ° C. and then naturally cooled.
(Example 1)
【0026】そして前記の方法で熱処理した実施例1に
ついて寸法5×10×20mm でかつ 3面を鏡面仕上した水
素ガス測定サンプルを作成して前記と同様な方法で測定
した所、水素濃度は4×1018(molecules/cm3) で、本加
熱処理により大幅に増加している事が確認された。又前
記サンプルの歪量はいずれも5(nm/cm)以下に維持さ
れていた。尚、ひずみ測定は日本光学硝子工業会規格
「JOGIS14」光学ガラスのひずみの測定方法に基づいて
行った。A hydrogen gas measurement sample having a size of 5 × 10 × 20 mm and mirror-finished on three sides was prepared for Example 1 which had been heat-treated by the above-mentioned method and measured by the same method as described above. At × 10 18 (molecules / cm 3 ), it was confirmed that this heat treatment significantly increased. Further, the strain amount of each of the samples was maintained at 5 (nm / cm) or less. The strain measurement was performed based on the method for measuring the strain of optical glass of Japan Optical Glass Industry Standard “JOGIS14”.
【0027】次に前記第1試験片について窒素ガス100
%の2000Kg/cm2の高圧雰囲気で、前記と同様な条件で
再溶融処理を行なった(比較例1)所、その水素濃度は
3×1018(molecules/cm3)で、本実施例においても加熱
処理前の水素濃度に比較して大幅に増加している事が知
見され、又歪量はいずれも5(nm/cm)以下であった。Next, with respect to the first test piece, nitrogen gas 100
% High pressure atmosphere of 2000 kg / cm 2 and remelting treatment under the same conditions as above (Comparative Example 1), the hydrogen concentration was 3 × 10 18 (molecules / cm 3 ). It was also found that the hydrogen concentration was significantly higher than that before the heat treatment, and the strain amount was 5 (nm / cm) or less in all cases.
【0028】次に前記の方法で熱処理した各実施例につ
いて耐エキシマレーザ性評価用に40×30×t10mm、両面
鏡面仕上げサンプル4枚と、ラマン散乱測定用に5×10×
t20mm、3面鏡面仕上げサンプル4枚を作成し、各種評価
を行った。Next, for each of the examples heat-treated by the above method, 40 × 30 × t 10 mm for evaluation of excimer laser resistance, 4 double-sided mirror-finished samples, and 5 × 10 × for Raman scattering measurement.
T 20 mm, 4 three-sided mirror finished samples were prepared and various evaluations were performed.
【0029】先ず耐KrFエキシマレーザ性の評価では、
照射条件がパルスエネルギー密度を約900(mj/cm2.puls
e)と高出力に設定し、周波数100 (Hz)、照射パル
ス数1×106(pulses)としてレーザ照射前後でのシリカガ
ラスの140nm〜900nm域での透過率の変化を調べた。First, in the evaluation of KrF excimer laser resistance,
The irradiation condition is a pulse energy density of about 900 (mj / cm 2 .puls
e) and a high output were set, and the change in transmittance of silica glass in the 140 nm to 900 nm region before and after laser irradiation was examined under the conditions of frequency 100 (Hz) and irradiation pulse number 1 × 10 6 (pulses).
【0030】その結果、実施例1のサンプルにおいて、
実質的に透過率低下が認められなかった。特に、E’セ
ンター吸収バンドに対応する5.8eV(約214nm)での透過率
は、レーザ照射後も±0.5(%)以内の見かけの透過率低
下であり、測定器の精度内のばらつきであった。しか
し、比較例1のサンプルでは、91%の見かけの透過率
が80%まで低下してしまった。As a result, in the sample of Example 1,
Substantially no decrease in transmittance was observed. In particular, the transmittance at 5.8 eV (about 214 nm) corresponding to the E'center absorption band is an apparent decrease in transmittance within ± 0.5 (%) even after laser irradiation, which is a variation within the accuracy of the measuring instrument. It was However, in the sample of Comparative Example 1, the apparent transmittance of 91% decreased to 80%.
【0031】次に、耐ArFエキシマレーザ性の評価で
は、照射条件がパルスエネルギー密度約200(mj/cm2.pul
se)周波数100(Hz)、照射パルス数1×106(pulses)と
してレーザ照射前後でのシリカガラスの140nm〜900nm域
での透過率の変化を調べた。Next, in the evaluation of ArF excimer laser resistance, the irradiation condition was a pulse energy density of about 200 (mj / cm 2 .pul).
se) Frequency was 100 (Hz) and the number of irradiation pulses was 1 × 10 6 (pulses), and the change in transmittance of silica glass in the 140 nm to 900 nm region was investigated before and after laser irradiation.
【0032】その結果、実施例1のサンプルの5.8eVで
の見かけの透過率91%がレーザ照射後にいずれのサン
プルも低下が認められなかったが、比較例1のサンプル
にArFエキシマレーザを照射したところ、透過率低下が
大幅に起こりやすく、好ましい耐レーザ性は得られなか
った。この原因は、ガラス中に何らかのチッ素化合物が
生成したためと推定される。この結果希ガスの存在が短
波長紫外線レーザの場合、とくに有効である事が確認さ
れた。As a result, the apparent transmittance of 91% at 5.8 eV of the sample of Example 1 was not observed to decrease in any sample after laser irradiation, but the sample of Comparative Example 1 was irradiated with ArF excimer laser. However, a decrease in transmittance is likely to occur, and preferable laser resistance cannot be obtained. The cause of this is presumed to be that some nitrogen compound was generated in the glass. As a result, it was confirmed that the presence of the rare gas is particularly effective in the case of a short wavelength ultraviolet laser.
【0033】次に、実施例1及び比較例1の各サンプル
について波長588nmにおける絶対屈折率ndの測定を行
った。測定サンプルは、水素ガス濃度測定に使用したも
のを再利用した。その結果、いずれも、nd=1.4615であ
り、再溶融処理前の試験片の屈折率はnd=1.4585である
ことから屈折率が0.003上昇している事が確認された。Next, the absolute refractive index n d at a wavelength of 588 nm was measured for each sample of Example 1 and Comparative Example 1. As the measurement sample, the one used for the hydrogen gas concentration measurement was reused. As a result, in all cases, n d = 1.4615 and the refractive index of the test piece before the remelting treatment was n d = 1.4585, so it was confirmed that the refractive index increased by 0.003.
【0034】また、該実施例1のサンプル及び処理前の
サンプルについてレーザラマン散乱測定法による、珪素
と酸素との間の基本振動による散乱ピーク(800cm-1)と
495(cm-1)のD1ラインと606(cm-1)のD2ラインのピーク
を測定し、上記1及び2式に基づいてその強度比を求め
た所、処理前のサンプルはR1=0.485〜0.503 R2=0.155〜
0.160であるのに対し、実施例No.1のサンプルについて
はR1=0.405 R2=0.110、実施例No.2のサンプルについ
てはR1=0.415 R2=0.115と大幅に低減している事が確認
された。そして前記D1ラインとD2ラインのピークは夫
々4員環と3員環のピークに対応するものである為に、
(F.L.Galeener,Journal of Non-Crystaline Solidos,V
ol.71, pp.373〜386,(1985))これらの員環構造が低
減している事が知見される。Further, with respect to the sample of Example 1 and the sample before the treatment, a scattering peak (800 cm -1 ) due to a fundamental vibration between silicon and oxygen was measured by a laser Raman scattering measurement method.
495 D 1 line and D 2 peak line of 606 (cm -1) of (cm -1) was measured and was determined the intensity ratio based on the 1 and 2 where the sample pretreatment R1 = 0.485 ~ 0.503 R2 = 0.155 ~
While it was 0.160, it was confirmed that R1 = 0.405 R2 = 0.110 for the sample of Example No. 1 and R1 = 0.415 R2 = 0.115 for the sample of Example No. 2, which were significantly reduced. . Since the peaks of the D 1 line and the D 2 line correspond to the peaks of the 4-membered ring and the 3-membered ring, respectively,
(FLGaleener, Journal of Non-Crystaline Solidos, V
ol.71, pp.373-386, (1985)) It is found that these member ring structures are reduced.
【0035】次に絶対屈折率若しくは員環構造の耐エキ
シマレーザ性に対する影響を調べるため、前述の第1試
験片をアルゴンガス100%で温度条件を実施例1と同
一で固定しつつ、圧力条件を10Kg/cm2で再溶融し所定
時間維持した後、前記圧力条件を維持して徐冷速度をほ
ぼ100℃/hrに維持して900℃まで徐冷し、そして前記圧
力を維持した状態で温度が200℃に低下するのをまち、
その後徐々に放圧しつつ自然放冷を行なう処理実験を行
った。(比較例2)Next, in order to investigate the influence of the absolute refractive index or the member ring structure on the excimer laser resistance, the above-mentioned first test piece was fixed at 100% argon gas under the same temperature condition as in Example 1, and under the pressure condition. Was remelted at 10 kg / cm 2 and maintained for a predetermined time, then the above pressure conditions were maintained, the slow cooling rate was maintained at about 100 ° C / hr, and the temperature was gradually cooled to 900 ° C. Wait for the temperature to drop to 200 ° C,
After that, a treatment experiment was conducted in which the pressure was gradually released and the mixture was naturally cooled. (Comparative example 2)
【0036】第1試験片をアルゴンガス100%の2000Kg
/cm2の高圧雰囲気で、軟化点(1600℃)より低い1200
℃の温度を3hr維持して再溶融する事なく加熱処理した
後、以下前記実施例1と同様に徐冷速度をほぼ100℃/h
rに維持して900℃まで徐冷しつつ及び減圧速度を前記徐
冷速度に対応させて50〜100Kg/cm2・hrにて1300Kg/cm2
まで降圧する。The first test piece was 2000 kg of 100% argon gas.
/cm21,200 lower than the softening point (1600 ℃) in high pressure atmosphere
The temperature was maintained at 3 ℃ for 3 hours and heat treatment was performed without remelting.
Thereafter, the slow cooling rate was set to approximately 100 ° C./h in the same manner as in Example 1 below.
While maintaining the temperature at r and gradually cooling to 900 ° C,
50-100Kg / cm depending on the cooling speed2・ 1300 kg / cm at hr2
Step down to.
【0037】そして1300Kg/cm2の圧力を維持した状態
で前記熱処理温度が200℃に低下するのをまち、該低下
した後暫くして徐々に放圧する。又加熱温度において
も、前記900℃まで徐冷した後そのまま自然放冷を行な
った。(比較例3)Then, while the pressure of 1300 kg / cm 2 is maintained, the heat treatment temperature is lowered to 200 ° C., and after the temperature is lowered, the pressure is gradually released for a while. Also at the heating temperature, the material was gradually cooled to 900 ° C. and then naturally cooled. (Comparative example 3)
【0038】そして比較例2及び3についてサンプルを
採取し、耐KrFエキシマレーザ性の評価を実施例1と同
一の手法を行った結果、照射前の5.8eVの見かけの透過
率が90〜91%であったサンプルがレーザ照射後は、比較
例2のサンプルでは30%前後に、比較例3のサンプル
では65%前後に、各々低下してしまった。Then, samples of Comparative Examples 2 and 3 were sampled, and the KrF excimer laser resistance was evaluated in the same manner as in Example 1. As a result, the apparent transmittance of 5.8 eV before irradiation was 90 to 91%. After the laser irradiation, the samples of Comparative Example 2 decreased to around 30% in the sample of Comparative Example 2 and around 65% in the sample of Comparative Example 3.
【0039】次に前記各比較例のサンプルについてナト
リウムd線(約588nm)における絶対屈折率の測定を行っ
た所比較例2ではnd=1.4585と熱処理前の試験片の屈折
率とほぼ同等であった。Next, the absolute refractive index was measured at the sodium d-line (about 588 nm) for the samples of each of the comparative examples. In Comparative Example 2, n d = 1.4585, which was almost the same as the refractive index of the test piece before heat treatment. there were.
【0040】また、レーザラマン散乱測定法値は、比較
例2ではR1=0.495,R2=0.160、比較例3ではR1=0.495,
R2=0.165と処理前のサンプルに比較して低減は見られな
かった。The laser Raman scattering measurement values are R1 = 0.495 and R2 = 0.160 in Comparative Example 2 and R1 = 0.495 in Comparative Example 3.
R2 = 0.165 and no reduction was seen compared to the untreated sample.
【0041】又前記サンプルについて水素濃度を測定し
た所、その水素濃度は比較例2については5×1016(mo
lecules/cm3・glass)未満で、水素ガスが内部に存在しな
い事が理解された。比較例3については、1×1017(mo
lecules/cm3・glass)であった。かかる実施例によれば三
員環、四員環構造の不安定なガラス組織割合の低減を図
り、又その処理を希ガス雰囲気下で行う事により希ガス
ドープと水素ガスの生成が可能となり、これにより耐レ
ーザ性の大幅向上を可能ならしめることが出来る事も確
認された。When the hydrogen concentration of the above sample was measured, the hydrogen concentration was 5 × 10 16 (mo
It was understood that hydrogen gas does not exist inside the glass at less than lecules / cm 3 · glass). For Comparative Example 3, 1 × 10 17 (mo
lecules / cm 3 · glass). According to this embodiment, the ratio of the unstable glass structure of the three-membered ring and four-membered ring structure is reduced, and by performing the treatment in a rare gas atmosphere, it is possible to generate rare gas dope and hydrogen gas. It was also confirmed that it is possible to significantly improve the laser resistance.
【0042】[0042]
【発明の効果】従って前記実施例より理解される如く、
本発明は合成シリカガラス中の三員環、四員環の不安定
なガラス組織割合の低減を図る事により、ガラス構造の
安定化とともに絶対屈折率の上昇を図る事が出来、これ
により光学的特性の向上を図ると共に、更に水素ガスの
存在又は/及び希ガスの存在により耐レーザ性の大幅向
上を可能ならしめることが出来る。Therefore, as can be understood from the above embodiment,
INDUSTRIAL APPLICABILITY The present invention can stabilize the glass structure and increase the absolute refractive index by reducing the ratio of the unstable glass structure of the three-membered ring and the four-membered ring in the synthetic silica glass. In addition to improving the characteristics, the presence of hydrogen gas and / or the presence of a rare gas can significantly improve the laser resistance.
【0043】尚、本発明は高出力の耐レーザガラスとし
て極めて有効であるが、これのみに限定される事なく、
特に本発明によればシリカガラスの厚みに制限される事
なく高密度化と構造の安定化を図れるためにレンズプリ
ズム等の光学部材として極めて有効である。等の種々の
著効を有す。The present invention is extremely effective as a high output laser resistant glass, but is not limited to this.
In particular, according to the present invention, it is extremely effective as an optical member such as a lens prism because the density can be increased and the structure can be stabilized without being limited by the thickness of silica glass. It has various remarkable effects.
【図1】本発明の実施例における熱処理状態を示す温度
と圧力の時系列曲線図である。FIG. 1 is a time series curve diagram of temperature and pressure showing a heat treatment state in an example of the present invention.
Claims (3)
ガラスにおいて、前記透明合成シリカガラスを軟化点(1600℃)以上
の温度で、500Kgf/cm 2 以上の圧力で再溶融処
理を行い、 該ガラス体のレーザラマンによる495cm−1散乱ピ
ーク強度(I1)及び606cm−1散乱ピーク強度
(I2)とケイ素と酸素との間の基本振動である800
cm−1散乱ピーク強度(I0)との強度比を、夫々R
1<0.48,R2<0.15に設定した事を特徴とす
る光学ガラスR1:前記ガラス体のレーザラマンによる495cm
−1 散乱ピーク強度(I 1 )とケイ素と酸素との間の基
本振動である800cm −1 散乱ピーク強度(I 0 )と
の強度比で、 R1=I 1 /I 0 で表わす。 R2:前記ガラス体のレーザラマンによる606cm
−1 散乱ピーク強度(I 2 )とケイ素と酸素との間の基
本振動である800cm −1 散乱ピーク強度(I 0 )と
の強度比で、 R2=I 2 /I 0 で表わす。 (定義)I 1 :495cm −1 散乱ピーク強度 I 2 :606cm −1 散乱ピーク強度 I 0 :800cm −1 散乱ピニク強度 1. An optical glass made of transparent synthetic silica glass , wherein the transparent synthetic silica glass has a softening point (1600 ° C.) or higher.
Remelting process at the temperature of 500kgf / cm 2 or more
Performs management, a fundamental vibration between 495cm -1 scattering peak intensity by laser Raman of the glass body (I 1) and 606 cm -1 scattering peak intensities and (I 2) silicon and oxygen 800
The intensity ratio to the cm −1 scattering peak intensity (I 0 ) is R
Optical glass R1: characterized by setting 1 <0.48 and R2 <0.15, 495 cm by laser Raman of the glass body
-1 group between scattering peak intensity (I 1 ) and silicon and oxygen
800 cm −1 scattering peak intensity (I 0 ) which is the main vibration and
In the intensity ratio of represented by R1 = I 1 / I 0. R2: 606 cm by laser Raman of the glass body
-1 Scattering peak intensity (I 2 ) and group between silicon and oxygen
800 cm −1 scattering peak intensity (I 0 ) which is the main vibration and
Is represented by R2 = I 2 / I 0 . (Definition) I 1: 495cm -1 scattering peak intensity I 2: 606 cm -1 scattering peak intensity I 0: 800 cm -1 scattered Piniku strength
ガラスにおいて、前記透明合成シリカガラスを軟化点(1600℃)以上
の温度で、2000Kgf/cm 2 の圧力で再溶融処理
を行い 、 該ガラス体のレーザラマンによる495cm−1散乱ピ
ーク強度(I1)及び606cm−1散乱ピーク強度
(I2)とケイ素と酸素との間の基本振動である800
cm−1散乱ピーク強度(I0)との強度比を、夫々R
1=0.30〜0.45、R2=0.05〜0.13に
設定した事を特徴とする光学ガラス2. An optical glass made of transparent synthetic silica glass , wherein the transparent synthetic silica glass has a softening point (1600 ° C.) or higher.
Remelting process at the temperature of 2000 Kgf / cm 2
Was carried out, a fundamental vibration between 495cm -1 scattering peak intensity by laser Raman of the glass body (I 1) and 606 cm -1 scattering peak intensities and (I 2) silicon and oxygen 800
The intensity ratio to the cm −1 scattering peak intensity (I 0 ) is R
1 = 0.30 to 0.45, R2 = 0.05 to 0.13
Optical glass characterized by setting
ーザ用ガラスにおいて、プロトン(H+)等の水素元素
を含む透明合成シリカガラスを希ガス雰囲気下で軟化点
(1600℃)以上の温度で、2000Kgf/cm 2
の圧力で再溶融処理を行い、 前記ガラス中に水素分子と共に、希ガス元素を含有させ
るとともに、 該ガラス体のレーザラマンによる495cm−1散乱ピ
ーク強度(I1)及び606cm−1散乱ピーク強度
(I2)とケイ素と酸素との間の基本振動である800
cm−1散乱ピーク強度(I0)との強度比を、夫々R
1<0.48,R2<0.15に設定した事を特徴とす
る耐レーザ用光学ガラス3. A laser resistant glass formed of transparent synthetic silica glass, wherein transparent synthetic silica glass containing a hydrogen element such as proton (H + ) is softened under a rare gas atmosphere.
2000 Kgf / cm 2 at a temperature of (1600 ° C.) or higher
Re-melting treatment is performed at a pressure of 1 to make the glass contain a rare gas element together with hydrogen molecules, and the glass body is subjected to laser Raman 495 cm −1 scattering peak intensity (I 1 ) and 606 cm −1 scattering peak intensity (I 2 ) 800, which is the fundamental vibration between silicon and oxygen
The intensity ratio to the cm −1 scattering peak intensity (I 0 ) is R
Laser resistant optical glass characterized by setting 1 <0.48 and R2 <0.15
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2413885A JPH08712B2 (en) | 1990-12-26 | 1990-12-26 | Optical glass |
| US07/779,737 US5410428A (en) | 1990-10-30 | 1991-10-23 | Optical member made of high-purity and transparent synthetic silica glass and method for production thereof or blank thereof |
| AT91118411T ATE135669T1 (en) | 1990-10-30 | 1991-10-29 | OPTICAL COMPONENT MADE OF HIGHLY PURE AND TRANSPARENT SYNTHETIC QUARTZ GLASS AND METHOD FOR ITS PRODUCTION AND ITS BLANK |
| EP91118411A EP0483752B1 (en) | 1990-10-30 | 1991-10-29 | Optical member made of high-purity and transparent synthetic silica glass and method for production thereof and blank thereof |
| DE69118101T DE69118101T2 (en) | 1990-10-30 | 1991-10-29 | Optical component made of high-purity and transparent, synthetic quartz glass and process for its production and its blank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2413885A JPH08712B2 (en) | 1990-12-26 | 1990-12-26 | Optical glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04224131A JPH04224131A (en) | 1992-08-13 |
| JPH08712B2 true JPH08712B2 (en) | 1996-01-10 |
Family
ID=18522439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2413885A Expired - Fee Related JPH08712B2 (en) | 1990-10-30 | 1990-12-26 | Optical glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08712B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212247A (en) * | 1988-02-19 | 1989-08-25 | Shinetsu Sekiei Kk | Production of base material for laser optical system |
-
1990
- 1990-12-26 JP JP2413885A patent/JPH08712B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04224131A (en) | 1992-08-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |