JPH0873265A - Method for manufacturing dielectric ceramics - Google Patents

Method for manufacturing dielectric ceramics

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Publication number
JPH0873265A
JPH0873265A JP6207728A JP20772894A JPH0873265A JP H0873265 A JPH0873265 A JP H0873265A JP 6207728 A JP6207728 A JP 6207728A JP 20772894 A JP20772894 A JP 20772894A JP H0873265 A JPH0873265 A JP H0873265A
Authority
JP
Japan
Prior art keywords
dielectric ceramics
dielectric
ceramics
mgtio
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6207728A
Other languages
Japanese (ja)
Inventor
Satohiko Memezawa
聡彦 目々澤
Keiichi Kagami
慶一 鏡
Takeshi Segawa
健 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6207728A priority Critical patent/JPH0873265A/en
Publication of JPH0873265A publication Critical patent/JPH0873265A/en
Withdrawn legal-status Critical Current

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Abstract

(57)【要約】 【目的】 製造工程数を減らし、より安価に低損失の誘
電体セラミクスを得ることを目的とする。 【構成】 原料粉末の混合物を造粒して得られる造粒物
を加圧成形した後に焼成して製造するMgTiO3 −C
aTiO3 系の誘電体セラミクスの製造方法であって、
焼成温度を1280℃〜1320℃の範囲で製造するよ
うにしたものである。
(57) [Abstract] [Purpose] An object of the present invention is to reduce the number of manufacturing steps and obtain a low-loss dielectric ceramic at a lower cost. [Measurement] MgTiO 3 -C produced by press-molding a granulated product obtained by granulating a mixture of raw material powders and then firing
A method for manufacturing an aTiO 3 -based dielectric ceramic, comprising:
The firing temperature is set to be in the range of 1280 ° C to 1320 ° C.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は例えば高周波(マイクロ
波)用の誘電体アンテナ、誘電体共振器等に使用して好
適な誘電体セラミクスの製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a dielectric ceramic suitable for use in, for example, a high frequency (microwave) dielectric antenna, a dielectric resonator, or the like.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】近年、
高周波(マイクロ波)用の誘電体アンテナ、誘電体共振
器等の如き電子デバイスの小型化、高周波化、高性能化
にともないマイクロ波域で高誘電率でかつ低損失である
誘電体セラミクスが必要とされている。
2. Description of the Related Art In recent years,
Dielectric ceramics with high permittivity and low loss in the microwave region are required as electronic devices such as high-frequency (microwave) dielectric antennas and dielectric resonators become smaller, higher in frequency, and higher in performance. It is said that.

【0003】従来、この高誘電率で低損失である誘電体
セラミクスとしてMgTiO3 −CaTiO3 系の誘電
体セラミクスが知られている(エレクトロニクス・セラ
ミクス,1993,Vol.24,124号)。このMgTiO3 −Ca
TiO3 系の誘電体セラミクスの特性は誘電率ε=21
でQf(Q値に共振周波数fを乗算した値)=5600
0GHzである。
Conventionally, as this dielectric ceramic having a high dielectric constant and a low loss, MgTiO 3 —CaTiO 3 -based dielectric ceramics have been known (Electronics Ceramics, 1993, Vol. 24, 124). This MgTiO 3 -Ca
The characteristics of TiO 3 -based dielectric ceramics have a dielectric constant ε = 21.
Qf (Q value multiplied by resonance frequency f) = 5600
It is 0 GHz.

【0004】この従来のMgTiO3 −CaTiO3
の誘電体セラミクスの製造方法は、図3に示す如く、先
ずTiO2 ,MgO,CaCO3 の原料粉末を(Mg
0.95Ca0.05)TiO3 で示される組成に秤量し、ボー
ルミル等で1次混合し、その後乾燥し、これを粉砕す
る。これを1000℃〜1200℃の温度で仮焼し、こ
の仮焼後のセラミクスを再び粉砕しその後、これを2次
混合し、これを乾燥し、その後造粒する。この造粒した
ものにバインダー(PVA)を添加し、加圧成形し、こ
の成形体を1400℃〜1600℃で焼成した。
As shown in FIG. 3, this conventional method of manufacturing a MgTiO 3 --CaTiO 3 -based dielectric ceramics first comprises forming raw material powders of TiO 2 , MgO, and CaCO 3 into (Mg
0.95 Ca 0.05 ) TiO 3 is weighed, primary mixed with a ball mill or the like, then dried and crushed. This is calcined at a temperature of 1000 ° C. to 1200 ° C., and the ceramics after the calcining are pulverized again, then secondarily mixed, dried, and then granulated. A binder (PVA) was added to the granulated product, the mixture was pressure-molded, and the molded product was fired at 1400 ° C to 1600 ° C.

【0005】このようにして製造された従来のMgTi
3 −CaTiO3 系の誘電体セラミクスの特性は誘電
率ε=21で且つQf=56000GHzであった。
Conventional MgTi produced in this way
The characteristics of the O 3 -CaTiO 3 -based dielectric ceramics were a dielectric constant ε = 21 and Qf = 56000 GHz.

【0006】斯る従来のMgTiO3 −CaTiO3
の誘電体セラミクスの製造方法においては上述図3に示
す如く、製造工程数が比較的多く、それだけ時間と手数
を用し、それだけ製造される誘電体セラミクスが高価と
なる不都合があった。
As shown in FIG. 3, the conventional method of manufacturing a MgTiO 3 —CaTiO 3 -based dielectric ceramics has a relatively large number of manufacturing steps, which requires a lot of time and labor, and the dielectrics manufactured accordingly. There was the inconvenience that the body ceramics became expensive.

【0007】本発明は斯る点に鑑み、製造工程数を減ら
し、より安価な低損失の誘電体セラミクスを提供するこ
とを目的とする。
In view of the above problems, it is an object of the present invention to reduce the number of manufacturing steps and provide a cheaper low loss dielectric ceramics.

【0008】[0008]

【課題を解決するための手段】本発明誘電体セラミクス
の製造方法は例えば図1に示す如く原料粉末の混合物を
造粒して得られる造粒物を加圧成形した後に焼成して製
造するMgTiO3 −CaTiO3 系の誘電体セラミク
スの製造方法であって、焼成温度を1280℃〜132
0℃の範囲で製造するようにしたものである。
The method for producing dielectric ceramics according to the present invention is, for example, MgTiO produced by granulating a mixture of raw material powders as shown in FIG. A method for producing a 3- CaTiO 3 -based dielectric ceramics, the firing temperature being 1280 ° C to 132 ° C.
It is manufactured in the range of 0 ° C.

【0009】[0009]

【作用】本発明によれば従来製造工程に比し、仮焼しな
いので、それだけ製造工程数が少なくなると共に焼成温
度を1280℃〜1320℃としたので、従来と同様に
良好な低損失特性及び誘電率の誘電体セラミクスを得る
ことができる。
According to the present invention, since the calcination is not performed as compared with the conventional manufacturing process, the number of manufacturing processes is reduced accordingly and the firing temperature is set to 1280 ° C to 1320 ° C. It is possible to obtain a dielectric ceramic having a dielectric constant.

【0010】[0010]

【実施例】以下図面を参照して本発明誘電体セラミクス
の製造方法の実施例につき説明する。先ず、本例におい
てはTiO2 ,MgO,CaCO3 の原料粉末を(Mg
0.95Ca0.05)TiO3 で示される組成に秤量し、これ
をボールミルで15時間湿式混合する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the method for producing dielectric ceramics of the present invention will be described below with reference to the drawings. First, in this example, raw material powders of TiO 2 , MgO, and CaCO 3 are
0.95 Ca 0.05 ) TiO 3 is weighed into a composition and wet mixed in a ball mill for 15 hours.

【0011】その後、この混合物を乾燥機で100℃、
20時間乾燥し、これを粉砕する。この粉砕物に成形用
バインダーとしてPVA10%水溶液を10%添加し、
#28のふるいで分級し、これを造粒粉とする。
Thereafter, this mixture was dried in a dryer at 100 ° C.
Dry for 20 hours and grind it. To this pulverized product, 10% PVA 10% aqueous solution was added as a molding binder,
Classify with # 28 sieve and use this as granulated powder.

【0012】この造粒物を水分調整してプレス圧8.2
MPa、加圧時間200秒で成形を行う。この成形体を
焼成炉を用いて、図2に示す如く焼成温度を1250
℃,1270℃,1280℃,1290℃,1300
℃,1310℃,1320℃及び1350℃と変化し、
夫々焼成時間5時間、O2 雰囲気で焼成した。
Water content of this granulated product is adjusted and the pressing pressure is 8.2.
Molding is performed at MPa and a pressurizing time of 200 seconds. Using this firing furnace, the temperature of the formed body was set to 1250 as shown in FIG.
℃, 1270 ℃, 1280 ℃, 1290 ℃, 1300
℃, 1310 ℃, 1320 ℃ and change to 1350 ℃,
Each was fired for 5 hours in an O 2 atmosphere.

【0013】この場合、焼成した誘電体セラミクスを直
径19mm、厚さ7.6mmの円柱に加工し、誘電体共
振器法により測定周波数3GHz〜6GHzの範囲で共
振周波数fとそのQ値を測定し、これからQf値を算出
した。この結果を図2に示す。またこの誘電体セラミク
スの誘電率εは21であった。
In this case, the fired dielectric ceramics are processed into a cylinder having a diameter of 19 mm and a thickness of 7.6 mm, and the resonance frequency f and its Q value are measured by the dielectric resonator method in the measurement frequency range of 3 GHz to 6 GHz. The Qf value was calculated from this. The result is shown in FIG. The dielectric constant ε of this dielectric ceramics was 21.

【0014】この図2の結果よりして、この焼成温度を
1280℃〜1320℃としたときにこのQf値が従来
のMgTiO3 −CaTiO3 系の誘電体セラミクスの
最高レベルの低損失特性であるQf=55000GHz
であった。
From the results shown in FIG. 2, when the firing temperature is set to 1280 ° C to 1320 ° C, the Qf value is the highest level low loss characteristic of the conventional MgTiO 3 -CaTiO 3 system dielectric ceramics. Qf = 55000 GHz
Met.

【0015】以上述べた如く、本例によれば従来の誘電
体セラミクスの製造工程の仮焼工程を省略し、これに伴
う粉砕工程、2次混合工程、乾燥工程を削減でき、この
製造工程数を削減しただけ時間及び手数が少なくなりそ
れだけ安価に誘電体セラミクスを得ることができる利益
がある。
As described above, according to this example, the calcination step in the conventional manufacturing process of the dielectric ceramics can be omitted, and the grinding process, the secondary mixing process, and the drying process associated therewith can be reduced. There is an advantage that dielectric ceramics can be obtained at low cost because the time and labor are reduced as much as

【0016】また本例によれば焼成温度を1280℃〜
1320℃としたのでQf値の高い従来のMgTiO3
−CaTiO3 系の誘電体セラミクスの最高レベルの低
損失特性のものを得ることができる利益がある。
Further, according to this example, the firing temperature is 1280.degree.
Since it was set to 1320 ° C, the conventional MgTiO 3 having a high Qf value
There is an advantage that it is possible to obtain the highest level of low loss characteristics of the CaTiO 3 -based dielectric ceramics.

【0017】尚本発明は上述実施例に限ることなく本発
明の要旨を逸脱することなく、その他種々の構成が採り
得ることは勿論である。
The present invention is not limited to the above-described embodiments, and it goes without saying that various other configurations can be adopted without departing from the gist of the present invention.

【0018】[0018]

【発明の効果】本発明によれば仮焼を省略すると共に焼
成温度を1280℃〜1320℃としたので低損失特性
の誘電体セラミクスを製造工程数が削減される分だけ容
易且つ安価に得ることができる利益がある。
According to the present invention, since calcination is omitted and the firing temperature is set to 1280 ° C to 1320 ° C, it is possible to easily and inexpensively obtain dielectric ceramics having a low loss characteristic as the number of manufacturing steps is reduced. There is a profit that can

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による製造工程を示す線図である。FIG. 1 is a diagram showing a manufacturing process according to the present invention.

【図2】本発明の説明に供する線図である。FIG. 2 is a diagram for explaining the present invention.

【図3】従来の製造工程を示す線図である。FIG. 3 is a diagram showing a conventional manufacturing process.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 原料粉末の混合物を造粒して得られる造
粒物を加圧成形した後に焼成して製造するMgTiO3
−CaTiO3 系の誘電体セラミクスの製造方法であっ
て、焼成温度を1280℃〜1320℃の範囲で製造す
るようにしたことを特徴とする誘電体セラミクスの製造
方法。
1. A MgTiO 3 produced by press-molding a granulated product obtained by granulating a mixture of raw material powders and then firing.
A method for producing a CaTiO 3 -based dielectric ceramics, which is characterized in that the firing temperature is produced in a range of 1280 ° C to 1320 ° C.
JP6207728A 1994-08-31 1994-08-31 Method for manufacturing dielectric ceramics Withdrawn JPH0873265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6207728A JPH0873265A (en) 1994-08-31 1994-08-31 Method for manufacturing dielectric ceramics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6207728A JPH0873265A (en) 1994-08-31 1994-08-31 Method for manufacturing dielectric ceramics

Publications (1)

Publication Number Publication Date
JPH0873265A true JPH0873265A (en) 1996-03-19

Family

ID=16544564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6207728A Withdrawn JPH0873265A (en) 1994-08-31 1994-08-31 Method for manufacturing dielectric ceramics

Country Status (1)

Country Link
JP (1) JPH0873265A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108383520A (en) * 2018-02-02 2018-08-10 天津大学 A kind of ultra-low loss type MgTiO3The preparation method of base microwave dielectric ceramics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108383520A (en) * 2018-02-02 2018-08-10 天津大学 A kind of ultra-low loss type MgTiO3The preparation method of base microwave dielectric ceramics

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