JPH08767Y2 - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPH08767Y2 JPH08767Y2 JP1986197921U JP19792186U JPH08767Y2 JP H08767 Y2 JPH08767 Y2 JP H08767Y2 JP 1986197921 U JP1986197921 U JP 1986197921U JP 19792186 U JP19792186 U JP 19792186U JP H08767 Y2 JPH08767 Y2 JP H08767Y2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- sphere
- light
- compound semiconductor
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Description
【考案の詳細な説明】 (イ) 産業上の利用分野 本考案は特に距離測定投光用に好適な球体を有した発
光素子に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a light emitting device having a sphere particularly suitable for distance measurement and projection.
(ロ) 従来の技術 従来より光束を絞り、又は光取出効率をあげるために
化合物半導体からなる発光ダイオードの上に透光性の球
体(マイクロレンズ)を載置することがなされており、
これは例えば特開昭60-140771号公報や特開昭60-161684
号公報に示されている。この様な発光素子においては略
立方体の発光ダイオードの中央部に球体を載置してお
り、光通信とか光ファイバー用に用いられている。そし
て自動焦点装置等の距離を測定するに用いる投光用の発
光素子においても球体を用いる事は効果が高いが、生産
性があまりよくない。それは、第1に配線材(例えばビ
ームリード又はワイヤボンド細線)が球体の載置等に支
障を生じない様にするため、半導体(発光ダイオード)
の一辺の大きさが大きくなることである。これは単にウ
エハ1枚あたりの取り数が減少するのみならず、これら
の発光素子では電流狭窄手段等の工夫をする事が多く、
不良を生じやすいので、取り数が少ないとこれら不良の
全体に占める率が高くなる。(B) Conventional Technology Conventionally, a light-transmitting sphere (microlens) is placed on a light emitting diode made of a compound semiconductor in order to narrow the light flux or increase the light extraction efficiency.
This is disclosed, for example, in JP-A-60-140771 and JP-A-60-161684.
It is shown in the publication. In such a light emitting device, a sphere is placed at the center of a substantially cubic light emitting diode, which is used for optical communication and optical fibers. The use of the sphere is also effective in the light emitting element for projecting light used for measuring the distance of the automatic focusing device or the like, but the productivity is not so good. First, in order to prevent wiring materials (eg, beam leads or wire bond thin wires) from hindering the placement of spheres, semiconductors (light emitting diodes) are used.
That is, the size of one side becomes larger. Not only does this reduce the number of wafers taken per wafer, but in many cases these light emitting elements are often devised such as current constriction means.
Since defects are likely to occur, if the number of taken defects is small, the ratio of these defects to the whole becomes high.
またこれらの発光素子においては球体の位置合せ、載
置作業について先にあげた資料では半導体に穴をあけた
り、位置決め専用突起を設けて工夫しているが、いずれ
も煩雑な作業を伴い好ましくない。Also, in these light emitting elements, the positioning of the spheres and the mounting work are devised by making holes in the semiconductor or providing protrusions for positioning in the above-mentioned materials, but both are not preferable because of complicated work. .
(ハ) 考案が解決しようとする問題点 本考案は上述の点を考慮してなされたもので、生産性
がよい発光素子を提供するものである。(C) Problems to be Solved by the Invention The present invention has been made in consideration of the above points, and provides a light-emitting device with high productivity.
(ニ) 問題点を解決するための手段 本考案は表面菱形の化合物半導体の上に球体を載置し
たもので、より好ましくは菱形の短い方の対角線の長さ
を球体の直径と略等しい長さとするものである。(D) Means for Solving the Problems The present invention is one in which a sphere is placed on a compound semiconductor having a rhombic surface, and more preferably, the length of the shorter diagonal of the rhombus is approximately equal to the diameter of the sphere. It is something to do.
(ホ) 作用 これにより複雑な素子形状をとる事なく配線部分を球
体載置部から突出させることができ、不必要に素子が大
きくなる事もなく、さらに球体と化合物半導体との外形
が略等しいので載置しやすい。(E) Action By this, the wiring part can be projected from the sphere mounting part without taking a complicated element shape, the element does not become unnecessarily large, and the outer shapes of the sphere and the compound semiconductor are substantially the same. Because it is easy to place.
(ヘ) 実施例 第1図は本考案実施例の発光素子の斜視図で、第2図
はその発光素子を用いた投光器の要部断面図である。こ
れらの図において(1)はGaAs赤外発光ダイオードまた
はシングルヘテロ接合発光ダイオードもしくはダブルヘ
テロ接合発光ダイオード等の化合物半導体で、発光PN接
合(11)を有したGaAlAs/GaAs等からなり、より好まし
くはPN逆バイアス構造等からなる電流狭窄手段(12)
(12)により、略中央部にのみ円形等の電流集中領域
(13)が設けてある。そして裏面には全面にオーミック
電極(14)が設けてあるが、表面には略中央部が光取出
部(15)になるように周辺部に囲繞電極(16)が設けて
ある。そしてこの化合物半導体(1)は略菱餅状をなし
ているので、囲繞電極(16)は中央に円形の孔を有した
菱形をしている。(2)はこの光取出部(15)に載置さ
れたガラス球等からなる透光性の球体である。(F) Embodiments FIG. 1 is a perspective view of a light emitting device of an embodiment of the present invention, and FIG. 2 is a sectional view of a main part of a projector using the light emitting device. In these figures, (1) is a compound semiconductor such as a GaAs infrared light emitting diode, a single heterojunction light emitting diode or a double heterojunction light emitting diode, which is made of GaAlAs / GaAs or the like having a light emitting PN junction (11), and more preferably Current confinement means consisting of PN reverse bias structure (12)
Due to (12), a current concentration region (13) having a circular shape or the like is provided only in the substantially central portion. The back surface is provided with an ohmic electrode (14) on the entire surface, and the front surface is provided with a surrounding electrode (16) in the peripheral portion such that the light extraction portion (15) is formed at the substantially central portion. Since this compound semiconductor (1) is in the shape of a diamond cake, the surrounding electrode (16) has a diamond shape with a circular hole in the center. (2) is a translucent sphere made of glass spheres or the like placed on the light extraction section (15).
このような発光素子は、例えば導体ステム(30)等に
導電性接着剤で固定されるが、その配線は、囲繞電極
(16)の長い方の対角線上においてワイヤボンド細線
(31)等で行なわれる。また球体(2)は囲繞電極(1
6)の孔に落とし込まれるが、孔(光取出部(15))は
球体(2)の接触面積より大きく設ける方が光取出効率
がよいので中心の位置合せが必要となる。この時囲繞電
極(16)の短い方の対角線の長さと球体(2)の直径と
を略同じ長さにしておけば位置合せは容易である。尚、
より正確な中心の位置合せが必要な時には、囲繞電極
(16)の長い方の対角線上に、球体(2)の端部に対す
る位置合せマークとなる30μm程度の凹部(17)(17)
を設けておけばよい。また球体(2)が動かない様、固
着剤(4)もしくは粘着剤を用いてもよい。さらに、投
光用にするには球体(2)の屈折率(ガラスの時1.9)
が大きすぎ、光束が細くなりすぎて距離測定に不都合な
ことが多い。この場合は発光素子全体を透光性樹脂の被
膜(5)で覆うと球体(2)の集光特性を減じた形で投
光出来るので好ましい。Such a light emitting element is fixed to, for example, a conductor stem (30) or the like with a conductive adhesive, and its wiring is made by a wire bond thin wire (31) or the like on the longer diagonal of the surrounding electrode (16). Be done. The sphere (2) is surrounded by the surrounding electrode (1
Although it is dropped into the hole of 6), it is better to provide the hole (light extraction part (15)) larger than the contact area of the spherical body (2) because the light extraction efficiency is better, so the center alignment is necessary. At this time, if the length of the diagonal line on the shorter side of the surrounding electrode (16) and the diameter of the sphere (2) are set to be substantially the same length, the alignment is easy. still,
When more accurate center alignment is required, recesses (17) (17) of about 30 μm, which serve as alignment marks for the ends of the spherical body (2), are formed on the longer diagonal line of the surrounding electrode (16).
Should be provided. Further, a sticking agent (4) or an adhesive may be used so that the sphere (2) does not move. Furthermore, for light projection, the refractive index of the sphere (2) (1.9 for glass)
Is too large and the luminous flux becomes too thin, which is often inconvenient for distance measurement. In this case, it is preferable to cover the entire light emitting element with the light-transmissive resin coating (5) because light can be projected in a form in which the light-collecting characteristics of the sphere (2) are reduced.
上記構成により、例えば直径500μmの球体(2)に
対し、従来は1辺が700μmの正方形をなした半導体を
用いており、1枚のウエハから1500個の半導体を得てい
たが、本考案によると短い方の対角線500μm、長い方
の対角線600μmの菱形とし、同じ寸法のウエハから250
0個の半導体を得ることができた。With the above configuration, for example, a sphere (2) having a diameter of 500 μm is conventionally used as a semiconductor having a square of 700 μm on a side, and 1500 semiconductors are obtained from one wafer. And a short diagonal 500μm and a long diagonal 600μm in a diamond shape, 250 from the same size wafer
We were able to obtain 0 semiconductors.
(ト) 考案の効果 以上のように本考案によれば、複雑な素子形状をとる
事なく配線部分を球体載置部から突出させることがで
き、不必要に素子が大きくなる事もない。さらに球体の
直径と化合物半導体の表面対角線の1つが略等しいの
で、球体の載置作業は半導体の端縁を基準にして容易に
行うことができ、大量生産においても作業性がよい、と
いう格別な効果を奏することがでる。(G) Effect of the Invention As described above, according to the present invention, the wiring portion can be projected from the spherical body mounting portion without taking a complicated element shape, and the element does not become unnecessarily large. Furthermore, since the diameter of the sphere and one of the surface diagonals of the compound semiconductor are substantially equal, the work of placing the sphere can be easily performed with reference to the edge of the semiconductor, and the workability is excellent even in mass production. It can be effective.
第1図は本考案実施例の発光素子の斜視図で、第2図は
その発光素子を用いた投光器の要部断面図である。 (1)……化合物半導体、(15)……光取出部、(16)
……囲繞電極、(2)……球体。FIG. 1 is a perspective view of a light emitting device according to an embodiment of the present invention, and FIG. 2 is a sectional view of an essential part of a projector using the light emitting device. (1) …… Compound semiconductor, (15) …… Light extraction part, (16)
...... Surrounding electrode, (2) …… Sphere.
Claims (1)
になるように表面周辺部に囲繞電極を有し、その光取出
部に透光性の球体を載置した発光素子において、その化
合物半導体は表面が菱形をした四角柱とするとともに、
前記菱形表面は前記球体の直径と略等しい長さの対角線
と、その長さより長い対角線とを有している事を特徴と
する発光素子。1. A light emitting device having a surrounding electrode on the peripheral portion of the surface of the compound semiconductor so that the substantially central portion of the surface thereof becomes a light extraction portion, and a translucent sphere is mounted on the light extraction portion. The compound semiconductor is a square prism with a diamond-shaped surface,
The light emitting device characterized in that the rhombic surface has a diagonal line having a length substantially equal to the diameter of the sphere and a diagonal line longer than the length.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986197921U JPH08767Y2 (en) | 1986-12-22 | 1986-12-22 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986197921U JPH08767Y2 (en) | 1986-12-22 | 1986-12-22 | Light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63102264U JPS63102264U (en) | 1988-07-02 |
| JPH08767Y2 true JPH08767Y2 (en) | 1996-01-10 |
Family
ID=31158132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986197921U Expired - Lifetime JPH08767Y2 (en) | 1986-12-22 | 1986-12-22 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08767Y2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5322386A (en) * | 1976-08-12 | 1978-03-01 | Sanyo Electric Co Ltd | Polarity identifying method of light emitting diode pellets |
| JPS5961127A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Method for liquid-phase epitaxial growth |
-
1986
- 1986-12-22 JP JP1986197921U patent/JPH08767Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63102264U (en) | 1988-07-02 |
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