JPH087683Y2 - Microwave amplifier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a microwave band amplifier, and more particularly to a microwave band amplifier having an output interface of a waveguide structure.

[Conventional technology]

In the microwave band amplifier, there is a configuration in which the front and rear are connected in multiple stages in parallel by a 90 ° hybrid in order to obtain high output power. In this case, the power combiner for combining the output powers is required to have a particularly low loss, so that the power combiner using the waveguide is often used. For this reason,
The output interface of the microwave amplifier has to be a waveguide, and a coaxial-waveguide converter has been used on the output side.

3 and 4 show an example of a conventional amplifier.
The drawing is a plan view, and FIG. 4 is a vertical sectional view. In these figures, 1 is a transistor with an internal matching circuit, 2 and 3 are dielectric substrates on the input side and the output side, respectively. Is formed. And the transistor 1
And the dielectric substrates 2 and 3 are mounted on the metal carrier 4A, and the dielectric substrates 2 and 3 are connected in series to the input terminal and the output terminal of the transistor 1, respectively.

A coaxial-waveguide converter 6 is integrally provided at one end of the metal carrier 4A, and the antenna 7 is connected to the output side dielectric substrate 3.

 Reference numeral 9 is an RF input interface.

[Problems to be solved by the device]

In this configuration, in order to supply a bias to the transistor 1 with an internal matching circuit, the dielectric substrates 2 and 3 having the bias supply circuits 7 and 8 are connected on the input side and the output side, respectively. However, the insertion loss of these dielectric substrates 2 and 3 becomes very large as the frequency becomes high, and especially the insertion loss of the dielectric substrate 3 on the output side becomes large, and a microwave amplifier with high output and high efficiency is realized. It is a big obstacle in doing so. Further, by providing these dielectric substrates 2 and 3, the metal carrier 4A also needs to be enlarged correspondingly, and there is a problem that the shape and weight increase.

The present invention reduces the insertion loss of the dielectric substrate and
It is an object of the present invention to provide a microwave band amplifier that can be made compact and lightweight.

[Means for solving the problem]

The microwave band amplifier of the present invention has an input side dielectric which is mounted on a metal carrier between an input terminal of a transistor with an internal matching circuit mounted on a metal carrier and a high frequency input terminal to form an input side bias circuit. Connect the body board,
In addition, the output terminal of the transistor is directly connected to the antenna of the coaxial-waveguide converter, which is projectingly arranged in the waveguide in the direction orthogonal to the plane of the metal carrier, and the outer wall of the waveguide on the transistor side is connected. An output side dielectric substrate on which an output side bias circuit is formed is connected to the output side dielectric substrate.

[Action]

In this configuration, it is not necessary to connect the output side dielectric substrate between the output terminal of the transistor and the coaxial-waveguide converter in an inserted state, the insertion loss due to the output side dielectric substrate is reduced, and By miniaturizing the carrier on which these transistors and dielectric substrates are mounted, the amplifier will be made smaller and lighter.

〔Example〕

 Next, the present invention will be described with reference to the drawings.

1 and 2 show an embodiment of the microwave band amplifier of the present invention. FIG. 1 is a plan view and FIG. 2 is a longitudinal sectional view thereof. In these figures, 1 is a transistor with an internal matching circuit, which is mounted on the metal carrier 4 together with the input side dielectric substrate 2. A coaxial-waveguide converter 5 is integrally attached to the output side of the metal carrier 4, and an antenna 6 protruding into the coaxial-waveguide converter 5 has an antenna 6 having an output terminal of the transistor 1. Are directly connected. An output side dielectric substrate 3 is supported on one side surface of the coaxial-waveguide converter 5.

An input side bias supply circuit 7 is formed on the input side dielectric substrate 2, and the input terminal of the transistor 1 is connected to a high frequency input interface 9 via the input side bias supply circuit 7. An output side bias supply circuit 8 is formed on the output side dielectric substrate 3 and is connected to an output terminal connected to the antenna 6 of the transistor 1.

Here, the transistor 1 with an internal matching circuit has an input / output impedance due to the matching circuit inside the package.
Since it is matched to 50Ω, there is no need to provide a matching circuit outside, and the output side dielectric substrate 3 may be used only for bias supply. Therefore, in this embodiment, the output side bias supply circuit 8, that is, the output side dielectric substrate 3 is connected to the output terminal of the transistor 1.

According to this structure, on the output terminal side of the transistor 1 with an internal matching circuit, the output side dielectric substrate 3 is connected to the output terminal simply for the purpose of supplying a bias. It is not necessary to interpose between 6 and 6. Therefore, the output side dielectric substrate 3 may be connected to the output terminal of the transistor 1 while being disposed on the side surface of the coaxial-waveguide converter 5, and the output side dielectric substrate 3 may be connected to the output terminal and the antenna 6. It is possible to reduce the insertion loss due to the insertion between and. This makes it possible to realize a microwave amplifier with high output and high efficiency, especially at high frequencies.

At the same time, the transistor 1 and the coaxial-waveguide converter 5
, The size of the microwave amplifier can be reduced,
It is also possible to reduce the weight.

[Effect of device]

As described above, in the present invention, the antenna of the coaxial-waveguide converter is connected to the output terminal of the transistor with the internal matching circuit, and the output side dielectric substrate on which the output side bias circuit is formed is connected. Therefore, it is not necessary to connect the output side dielectric substrate between the output terminal of the transistor and the coaxial-waveguide converter in an inserted state, and the insertion loss due to this output side dielectric substrate is reduced to improve the amplifier Output and high efficiency can be realized.

Further, by eliminating the insertion state of the output side dielectric substrate, the carrier on which the transistor and the dielectric substrate are mounted can be downsized, and the size and weight of the amplifier can be reduced.

Further, in the present invention, the output terminal of the transistor is coaxial-
Since the antenna of the waveguide converter is directly connected, and the dielectric substrate on the output side is mounted on the outer surface of the waveguide orthogonal to the metal carrier, it is placed between the transistor and the waveguide. A space for arranging the output side dielectric substrate in a plane is not necessary, and the plane size can be reduced and the size of the amplifier can be reduced.

[Brief description of drawings]

FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a vertical sectional view of FIG. 1, FIG. 3 is a plan view of a conventional microwave band amplifier, and FIG. 4 is a vertical sectional view of FIG. It is a figure. 1 ... Transistor with internal matching circuit, 2 ... Input side dielectric substrate, 3 ... Output side dielectric substrate, 4, 4A ... Metal carrier, 5 ...
Coaxial-waveguide converter, 6 ... Antenna, 7 ... Input side bias supply circuit, 8 ... Output side bias supply circuit, 9 ... High frequency input interface.

Claims (1)

[Scope of utility model registration request] 1. A transistor with an internal matching circuit mounted on a metal carrier, and a bias supply circuit connected to the input side and the output side of the transistor, respectively, and to the plane of the metal carrier on the output side. In a micro-band amplifier including a coaxial-waveguide converter composed of waveguides formed in orthogonal directions, the input terminal of the transistor is mounted on the metal carrier between the high-frequency input terminal and the input terminal of the transistor. An input-side dielectric substrate on which an input-side bias circuit is formed is connected, and the antenna of the coaxial-waveguide converter protrudingly arranged in the waveguide is directly connected to the output terminal of the transistor, and A microwave band characterized by being connected to an output-side dielectric substrate, which is mounted on an outer wall of the wave tube on the transistor side, and which forms an output-side bias circuit. Width device.