JPH0878281A - Electronic component manufacturing method - Google Patents
Electronic component manufacturing methodInfo
- Publication number
- JPH0878281A JPH0878281A JP6211173A JP21117394A JPH0878281A JP H0878281 A JPH0878281 A JP H0878281A JP 6211173 A JP6211173 A JP 6211173A JP 21117394 A JP21117394 A JP 21117394A JP H0878281 A JPH0878281 A JP H0878281A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- manufacturing
- ceramic element
- component according
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
(57)【要約】
【目的】 本発明は電子部品の製造方法に関するもの
で、浸入水分による素子の変成を防止するものである。
【構成】 そしてこの目的を達成するために本発明は、
焼成後のバリスタ素子１を洗浄させるものである。
(57) [Summary] [Object] The present invention relates to a method for manufacturing an electronic component, and is to prevent the transformation of an element due to infiltration moisture. In order to achieve this object, the present invention provides
This is for cleaning the varistor element 1 after firing.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子部品の製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing electronic parts.
【０００２】[0002]
【従来の技術】従来より、セラミック電子部品は、その
セラミック素子を焼結させるために、例えば、１２００
℃程度の高温で焼成している。2. Description of the Related Art Conventionally, a ceramic electronic component has been manufactured, for example, in order to sinter its ceramic element.
It is baked at a high temperature of about ℃.
【０００３】上記焼成により、セラミック素子を構成す
る各元素はほとんど全てが、焼結反応し定形のセラミッ
ク素子が形成されることとなる。そして、その後、電極
を形成し、電子部品を得ていた。By the above-mentioned firing, almost all of the elements constituting the ceramic element undergo a sintering reaction to form a regular-shaped ceramic element. Then, after that, an electrode was formed to obtain an electronic component.
【０００４】[0004]
【発明が解決しようとする課題】上記構成において、問
題となるのは、セラミック素子に水分が浸入すると、電
気特性が劣化してしまうということであった。即ち、上
述したように、高温焼結によりセラミック素子と構成す
る各元素は、ほとんど全てが焼結反応しているのではあ
るが、一部の未反応物質は、この浸入水分によりイオン
化し、その結果として、上述のごとく電気特性を劣化さ
せてしまうのであった。A problem with the above structure is that when water enters the ceramic element, the electrical characteristics deteriorate. That is, as described above, although almost all elements constituting the ceramic element by high temperature sintering are undergoing a sintering reaction, some unreacted substances are ionized by this infiltrated water, As a result, the electrical characteristics deteriorate as described above.
【０００５】そこで本発明は、浸入水分によるセラミッ
ク素子の変性を防止することを目的とするものである。[0005] Therefore, the present invention is intended to prevent the modification of the ceramic element due to infiltration moisture.
【０００６】[0006]
【課題を解決するための手段】そして、この目的を達成
するために、本発明は、焼成後のセラミック素子を洗浄
するものである。In order to achieve this object, the present invention is to clean a ceramic element after firing.
【０００７】[0007]
【作用】以上の方法によれば、未反応物質は、洗浄によ
り除去されるので、例え浸入水分があったとしても、素
子の変性を防止することが出来る。According to the above method, the unreacted substances are removed by washing, so that even if there is infiltrated water, the element can be prevented from being denatured.
【０００８】[0008]
（実施例１）以下、本発明の第１の実施例について、図
面を用いて説明する。(First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.
【０００９】図１において、１はバリスタ素子で、その
内部には複数の内部電極２が設けられ、その両端には外
部電極３が設けられている。バリスタ素子１は、ＳｒＴ
ｉＯ 3を主成分とし、副成分としてＮｂ2Ｏ5、Ｔａ
2Ｏ5、ＳｉＯ2、ＭｎＯ2などを添加して形成したもので
ある。また、内部電極２はＮｉを主成分とし、副成分と
してＬｉ2ＣＯ3などを添加して形成したものである。さ
らに外部電極３は、下層３ａをＮｉを主成分とし、副成
分としてＬｉ2ＣＯ3などを添加して形成し、上層３ｂを
Ａｇで形成したものである。さらに外部電極３表面にＮ
ｉメッキ４ａ、その上に半田メッキ４ｂを行った。In FIG. 1, reference numeral 1 is a varistor element,
A plurality of internal electrodes 2 are provided inside, and both ends are
The partial electrode 3 is provided. Varistor element 1 is SrT
iO 3As the main component and Nb as the sub-component2OFive, Ta
2OFive, SiO2, MnO2It is formed by adding
is there. In addition, the internal electrode 2 has Ni as a main component and a sub-component as
Then Li2CO3It is formed by adding It
In addition, in the external electrode 3, the lower layer 3a contains Ni as a main component, and
Li as minutes2CO3And the like are added to form the upper layer 3b.
It is formed of Ag. In addition, N on the surface of the external electrode 3
The i plating 4a and the solder plating 4b were formed on the i plating 4a.
【００１０】図２は、製造工程を示し、（５）に示すご
とく、原料の混合、粉砕、スラリー化、シート成形によ
り、セラミックシート１ａを作製した。FIG. 2 shows a manufacturing process. As shown in (5), a ceramic sheet 1a was produced by mixing raw materials, pulverizing, slurrying, and sheet forming.
【００１１】次に、セラミックシート１ａと内部電極２
とを積層（６）し、それを切断（７）、脱バイ・仮焼
（８）、面取り（９）した。Next, the ceramic sheet 1a and the internal electrodes 2
And were laminated (6), which were cut (7), de-baked and calcined (8), and chamfered (9).
【００１２】次に、バリスタ素子１の端面に、下層３ａ
となるＮｉ外部電極を塗布（１０）し、１２００〜１３
００℃で還元焼成（１１）した。その後、洗浄液として
用いるイオン交換水中に浸漬し加熱して、５分以上沸騰
させて、洗浄（１２）し、さらに乾燥後に、下層３ａの
上に、上層３ｂとなるＡｇ外部電極を塗布（１３）し、
７００〜８５０℃で再酸化のため加熱（１４）する。次
に再度、再酸化（１４）したバリスタ素子１をイオン交
換水に浸漬し、前記と同様に、加熱洗浄（１５）した。Next, the lower layer 3a is formed on the end face of the varistor element 1.
Ni external electrode to be applied is applied (10), and 1200 to 13
Reduction baking (11) was carried out at 00 ° C. After that, it is immersed in ion-exchanged water used as a cleaning liquid, heated, boiled for 5 minutes or more to wash (12), and after drying, an Ag external electrode to be the upper layer 3b is applied on the lower layer 3a (13). Then
Heat (14) at 700-850 ° C. for reoxidation. Next, the re-oxidized (14) varistor element 1 was again immersed in ion-exchanged water, and heated and washed (15) in the same manner as above.
【００１３】（実施例２）以下、第２の実施例につい
て、図１，図３を参照しながら説明する。(Second Embodiment) A second embodiment will be described below with reference to FIGS.
【００１４】実施例１と同様にして、図３に示す（５）
〜（９）の工程を経て、次に下層３ａを塗布（１０）
し、還元焼成（１１）した後、Ｈ2Ｏ2とＮＨ4ＯＨとを
用いた水溶液中に浸漬し、洗浄（１２ａ）して、次に、
イオン交換水中に浸漬し洗浄（１２ｂ）し、乾燥した後
に、下層３ａの上に、上層３ｂとなるＡｇ外部電極を塗
布（１３）し、７００〜８５０℃で再酸化のため加熱す
る（１４）。次に再度、再酸化したバリスタ素子１をイ
オン交換水中に浸漬し加熱洗浄（１５）した。Similar to the first embodiment, (5) shown in FIG.
Through (9), then the lower layer 3a is applied (10)
Then, after reduction firing (11), it is immersed in an aqueous solution using H 2 O 2 and NH 4 OH, washed (12a), and then
After being immersed in ion-exchanged water for washing (12b) and dried, an Ag external electrode to be the upper layer 3b is applied (13) on the lower layer 3a and heated at 700 to 850 ° C for reoxidation (14). . Next, the reoxidized varistor element 1 was again immersed in ion-exchanged water and heated and washed (15).
【００１５】（実施例３）以下、本発明の第３の実施例
について、図１，図４を参照しながら説明する。(Embodiment 3) Hereinafter, a third embodiment of the present invention will be described with reference to FIGS.
【００１６】実施例１および２と同様にして、図４に示
す（５）〜（１２）の工程を経た後、上層３ｂを付与し
（１３）、再酸化（１４）して、洗浄（１５）したバリ
スタ素子１の上層３ｂの上にＮｉメッキ及び半田メッキ
（１６）をした後、エタノール溶液中に浸漬し、次に加
熱したイオン交換水で浸漬し洗浄（１７）し、図１に示
すごとく電子部品を得た。In the same manner as in Examples 1 and 2, after the steps (5) to (12) shown in FIG. 4, the upper layer 3b is applied (13), reoxidized (14), and washed (15). 1) Ni plating and solder plating (16) are performed on the upper layer 3b of the varistor element 1, which is then dipped in an ethanol solution, and then dipped in heated ion-exchanged water to be washed (17), as shown in FIG. I got electronic parts.
【００１７】このような上記各実施例での洗浄により、
バリスタ素子１に残っていた未反応物質は除去され、浸
入水分によるバリスタ電圧の低下が防止できるものであ
る。By the cleaning in each of the above embodiments,
The unreacted substances remaining in the varistor element 1 are removed, and it is possible to prevent the varistor voltage from decreasing due to the infiltrated water.
【００１８】さらに、上記各実施例においては、積層バ
リスタを例にあげたが、本発明は、チップ抵抗、コイ
ル、バリスタ、サーミスタ、コンデンサ、圧電体、積層
セラミックコンデンサ、積層サーミスタ等に使用できる
ものであり、またその形状も、ディスク型、円筒型等問
わない。Further, in each of the above embodiments, the laminated varistor is taken as an example, but the present invention can be used for a chip resistor, a coil, a varistor, a thermistor, a capacitor, a piezoelectric body, a laminated ceramic capacitor, a laminated thermistor and the like. The shape is not limited to a disk type or a cylindrical type.
【００１９】また、製造工程上重要なことは、 （１）水で洗浄する場合、水はイオン交換水、もしくは
純水が望ましい。Also important in the manufacturing process are: (1) When washing with water, the water is preferably ion-exchanged water or pure water.
【００２０】（２）上記、水で洗浄する場合、加熱した
方が洗浄能力は大幅に向上するが、メッキ後のバリスタ
素子１で実施するとメッキ面が酸化されるため避ける方
が望ましい。(2) In the case of cleaning with water as described above, the cleaning performance is greatly improved by heating, but it is desirable to avoid it if the varistor element 1 after plating is oxidized because the surface is oxidized.
【００２１】（３）Ｈ2Ｏ2のアルカリ溶液で洗浄する場
合、Ａｇ焼付け後のバリスタ素子１で実施するとＡｇが
遊離するため避けた方が望ましい。(3) When washing with an alkaline solution of H 2 O 2 , it is desirable to avoid Ag if it is carried out with the varistor element 1 after Ag baking.
【００２２】（４）アルコール溶液に浸漬し洗浄する場
合は、浸漬後のバリスタ素子１は、乾燥させることなく
早急に次工程の洗浄を実施する方が望ましい。(4) When immersing in an alcohol solution for cleaning, it is desirable that the varistor element 1 after immersion be immediately cleaned in the next step without being dried.
【００２３】焼成したバリスタ素子１をイオン交換水に
浸漬することにより、バリスタ素子１中の未反応物質が
拡散しようとして、バリスタ素子１の外部へ出ていく。
またさらに加熱することにより、イオン交換水中に対流
が生じ、未反応物質が外部へ出ていきやすくなる。ま
た、バリスタ素子１をＨ2Ｏ2のアルカリ溶液に浸漬する
ことにより、バリスタ素子１中の未反応物質、例えば金
属イオンなどが、Ｈ2Ｏ2により酸化して、安定化し、例
え水分がバリスタ素子１中に浸入したとしても特性に影
響を及ぼさない。By immersing the fired varistor element 1 in ion-exchanged water, the unreacted substances in the varistor element 1 try to diffuse out of the varistor element 1.
Furthermore, by further heating, convection occurs in the ion-exchanged water, and unreacted substances are likely to flow out. In addition, by immersing the varistor element 1 in an alkaline solution of H 2 O 2 , unreacted substances in the varistor element 1, such as metal ions, are oxidized by H 2 O 2 and stabilized, and moisture, for example, is varistor. Even if it penetrates into the element 1, it does not affect the characteristics.
【００２４】また、アルコールあるいはその誘導体の溶
液に浸漬することにより、バリスタ素子１内部のすみず
みにまで溶液が浸入し、次に、イオン交換水で加熱洗浄
する際、この溶液が気化し、水と入れ替わる際、未反応
物質も一緒にバリスタ素子１外部へ出ていくこととな
る。By immersing in a solution of alcohol or its derivative, the solution penetrates into every corner of the varistor element 1, and when it is heated and washed with ion-exchanged water, this solution vaporizes and becomes water. When it is replaced with, the unreacted substance also goes out to the outside of the varistor element 1.
【００２５】なお、洗浄液に浸漬し、加熱する際、５分
以上煮沸することにより、よりよい効果が得られる。It should be noted that a better effect can be obtained by boiling for 5 minutes or more when immersed in the cleaning liquid and heated.
【００２６】また、過酸化水素のアルカリ溶液を用いる
場合、実施例２においては、アルカリ溶液としてＮＨ4
ＯＨを用いたが、他にも、バリスタ素子１に影響を及ぼ
さないアルカリ溶液であれば構わない。さらに、実施例
３において、エタノール溶液を用いたが、他にメタノー
ル、プロパノール等のアルコール、アセトン等のケト
ン、酢酸メチル等のエステル、エーテル、ベンゼン等の
芳香族化合物で、洗浄液よりも、沸点と粘度の低い溶液
であれば構わない。When an alkaline solution of hydrogen peroxide is used, NH 4 is used as the alkaline solution in Example 2.
Although OH is used, any other alkaline solution that does not affect the varistor element 1 may be used. Furthermore, in Example 3, an ethanol solution was used, but other than that, alcohols such as methanol and propanol, ketones such as acetone, esters such as methyl acetate, aromatic compounds such as ether, benzene, etc. Any solution having a low viscosity may be used.
【００２７】[0027]
【発明の効果】以上のように本発明は、焼成後のセラミ
ック素子を洗浄するものであり、以上の方法によれば、
未反応物質は、洗浄除去され、例え浸入水分があったと
しても、素子の変成を防止することが出来る。As described above, the present invention is for cleaning the ceramic element after firing, and according to the above method,
Unreacted substances can be removed by washing, and even if there is infiltrated water, it is possible to prevent the device from being transformed.
【図１】本発明の一実施例におけるバリスタの断面図FIG. 1 is a sectional view of a varistor according to an embodiment of the present invention.
【図２】本発明の第１の実施例におけるバリスタの製造
工程図FIG. 2 is a manufacturing process diagram of the varistor according to the first embodiment of the present invention.
【図３】本発明の第２の実施例におけるバリスタの製造
工程図FIG. 3 is a manufacturing process diagram of a varistor in a second embodiment of the present invention.
【図４】本発明の第３の実施例におけるバリスタの製造
工程図FIG. 4 is a manufacturing process diagram of a varistor in a third embodiment of the present invention.
１ バリスタ素子 ２ 内部電極 ３ 外部電極 ４ メッキ電極 1 Varistor element 2 Internal electrode 3 External electrode 4 Plated electrode
Claims (15)
ラミック素子を洗浄する電子部品の製造方法。1. A method of manufacturing an electronic component, which comprises firing a ceramic element and then cleaning the ceramic element.
ラミック素子を洗浄液中に浸漬して洗浄する電子部品の
製造方法。2. A method of manufacturing an electronic component, which comprises firing a ceramic element and then immersing the ceramic element in a cleaning liquid to clean it.
電子部品の製造方法。3. The method of manufacturing an electronic component according to claim 2, wherein water is used as the cleaning liquid.
液を用いる請求項２記載の電子部品の製造方法。4. The method of manufacturing an electronic component according to claim 2, wherein an alkaline solution of hydrogen peroxide is used as the cleaning liquid.
いる請求項４記載の電子部品の製造方法。5. The method of manufacturing an electronic component according to claim 4, wherein aqueous ammonia is used as the alkaline solution.
漬し、加熱洗浄する電子部品の製造方法。6. A method of manufacturing an electronic component, which comprises immersing a ceramic element in a cleaning liquid after firing and heating and cleaning the ceramic element.
請求項６記載の電子部品の製造方法。7. The method of manufacturing an electronic component according to claim 6, wherein the cleaning liquid is heated for 5 minutes or more after boiling.
ための加熱を行った後、前記セラミック素子を洗浄する
電子部品の製造方法。8. A method of manufacturing an electronic component, comprising: firing a ceramic element, then heating for oxidation, and then washing the ceramic element.
前記セラミック素子の表面に電極を形成後、洗浄する電
子部品の製造方法。9. The ceramic element is cleaned after firing and then:
A method of manufacturing an electronic component, comprising forming electrodes on the surface of the ceramic element and then cleaning the electrodes.
請求項９記載の電子部品の製造方法。10. The method of manufacturing an electronic component according to claim 9, wherein the electrode is plated and then washed.
セラミック素子を有機溶媒に浸漬させ、次に、この有機
溶媒よりも高温の洗浄液中に浸漬させて洗浄する電子部
品の製造方法。11. A method of manufacturing an electronic component, which comprises firing a ceramic element, immersing the ceramic element in an organic solvent, and then immersing the ceramic element in a cleaning liquid having a temperature higher than that of the organic solvent for cleaning.
ものを用いる請求項１１記載の電子部品の製造方法。12. The method of manufacturing an electronic component according to claim 11, wherein an organic solvent having a boiling point lower than that of the cleaning liquid is used.
ものを用いる請求項１１記載の電子部品の製造方法。13. The method of manufacturing an electronic component according to claim 11, wherein an organic solvent having a viscosity lower than that of the cleaning liquid is used.
その誘導体の溶液を用いる請求項１１記載の電子部品の
製造方法。14. The method of manufacturing an electronic component according to claim 11, wherein a solution of alcohol or a derivative thereof is used as the organic solvent.
ル、プロパノールのうち少なくとも一種類以上を含有す
る溶液を用いる請求項１４記載の電子部品の製造方法。15. The method of manufacturing an electronic component according to claim 14, wherein a solution containing at least one kind of methanol, ethanol, and propanol is used as the solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6211173A JPH0878281A (en) | 1994-09-05 | 1994-09-05 | Electronic component manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6211173A JPH0878281A (en) | 1994-09-05 | 1994-09-05 | Electronic component manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0878281A true JPH0878281A (en) | 1996-03-22 |
Family
ID=16601623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6211173A Pending JPH0878281A (en) | 1994-09-05 | 1994-09-05 | Electronic component manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0878281A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002025804A (en) * | 2000-07-07 | 2002-01-25 | Toshiba Corp | Ceramic element unit and method of manufacturing the same |
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|---|---|---|---|---|
| JPS602681A (en) * | 1983-06-16 | 1985-01-08 | Murata Mfg Co Ltd | Rust preventive treatment of copper or copper alloy |
| JPH03280479A (en) * | 1990-03-28 | 1991-12-11 | Nec Corp | Manufacturing method of multilayer ceramic electrostrictive element |
| JPH05166666A (en) * | 1991-12-19 | 1993-07-02 | Toshiba Corp | Metal-ceramic laminated film |
| JPH05291074A (en) * | 1992-04-14 | 1993-11-05 | Matsushita Electric Ind Co Ltd | Manufacture of laminated ceramic element |
-
1994
- 1994-09-05 JP JP6211173A patent/JPH0878281A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS602681A (en) * | 1983-06-16 | 1985-01-08 | Murata Mfg Co Ltd | Rust preventive treatment of copper or copper alloy |
| JPH03280479A (en) * | 1990-03-28 | 1991-12-11 | Nec Corp | Manufacturing method of multilayer ceramic electrostrictive element |
| JPH05166666A (en) * | 1991-12-19 | 1993-07-02 | Toshiba Corp | Metal-ceramic laminated film |
| JPH05291074A (en) * | 1992-04-14 | 1993-11-05 | Matsushita Electric Ind Co Ltd | Manufacture of laminated ceramic element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002025804A (en) * | 2000-07-07 | 2002-01-25 | Toshiba Corp | Ceramic element unit and method of manufacturing the same |
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