JPH087886B2 - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPH087886B2
JPH087886B2 JP12560989A JP12560989A JPH087886B2 JP H087886 B2 JPH087886 B2 JP H087886B2 JP 12560989 A JP12560989 A JP 12560989A JP 12560989 A JP12560989 A JP 12560989A JP H087886 B2 JPH087886 B2 JP H087886B2
Authority
JP
Japan
Prior art keywords
atomic
coercive force
layer
film
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12560989A
Other languages
Japanese (ja)
Other versions
JPH02304755A (en
Inventor
雅樹 伊藤
活二 中川
栄三 深見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP12560989A priority Critical patent/JPH087886B2/en
Publication of JPH02304755A publication Critical patent/JPH02304755A/en
Publication of JPH087886B2 publication Critical patent/JPH087886B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光磁気記録媒体、特に、磁気光学効果を利
用してレーザ光により情報の記録,再生を行なう光磁気
記録媒体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-optical recording medium, and more particularly to a magneto-optical recording medium that records and reproduces information with a laser beam by utilizing a magneto-optical effect.

〔従来の技術〕[Conventional technology]

従来の光磁気記録媒体は、記録特性,再生特性,記録
の安定性向上を目的として、光磁気記録層として複数の
磁性層を用いたものが提案されている。代表的な例は低
いキュリー温度を示す記録特性のよい高保磁力層(以
下、書込層という)と高いキュリー温度を示す再生特性
のよい低保磁力層(以下、読出層という)とを積層し、
少ないエネルギーで書込層に書き込んだビットを磁気光
学効果の大きい読出層に交換結合により転写し、読出層
側から読み出すものである(例えば、特開昭57-78652
号)。
As a conventional magneto-optical recording medium, one using a plurality of magnetic layers as a magneto-optical recording layer has been proposed for the purpose of improving recording characteristics, reproducing characteristics, and recording stability. A typical example is stacking a high coercive force layer (hereinafter referred to as a write layer) having a low Curie temperature and good recording characteristics and a low coercive force layer (hereinafter referred to as a read layer) having a good Curie temperature and good reproduction characteristics. ,
Bits written in the writing layer with a small amount of energy are transferred by exchange coupling to the reading layer having a large magneto-optical effect, and read from the reading layer side (for example, JP-A-57-78652).
issue).

このような高保磁力層としては上例では、TbxFe100-x
の非晶質合金が用いられ、また低保磁力層としては{Gd
z(FeyCo100-y)100-z}が用いられている。
As such a high coercive force layer, in the above example, Tb x Fe 100-x
The amorphous alloy of is used as the low coercive force layer
z (Fe y Co 100-y ) 100-z } is used.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

しかしながら、従来の光磁気記録媒体は、腐食されや
すいという欠点を有しており、実用に供するには問題が
あった。
However, the conventional magneto-optical recording medium has a drawback that it is easily corroded, and there is a problem in putting it to practical use.

本発明者らは、高感度で高C/Nを維持したまま高耐蝕
性を有する記録材料を見出し、本発明に至った。
The present inventors have found a recording material having high sensitivity and high corrosion resistance while maintaining high C / N, and arrived at the present invention.

〔課題を解決するための手段〕[Means for solving the problem]

本発明の光磁気記録媒体は、垂直磁化可能な低キュリ
ー点を有する高保磁力層と垂直磁化可能な高キュリー点
を有する低保磁力層とを有し、該高保磁力層と該低保磁
力層とは交換結合している光磁気記録媒体であって、前
記高保磁力層が(TbxFe100-x)100-aTiaの非晶質合金であ
り、前記低保磁力層が{Gdz(FeyCo100-y)100-z100-bT
ibであり、x,y,z,a,bがそれぞれ x=20〜25 原子% y=50〜90 原子% z=20〜26 原子% a=2〜8 原子% b=2〜8 原子% の範囲にあるように構成される。
The magneto-optical recording medium of the present invention comprises a high coercive force layer having a low Curie point capable of perpendicular magnetization and a low coercive force layer having a high Curie point capable of perpendicular magnetization, and the high coercive force layer and the low coercive force layer. Is an exchange-coupled magneto-optical recording medium, the high coercive force layer is an amorphous alloy of (Tb x Fe 100-x ) 100-a Ti a , and the low coercive force layer is {Gd z (Fe y Co 100-y ) 100-z } 100-b T
i b , and x, y, z, a and b are x = 20 to 25 atom% y = 50 to 90 atom% z = 20 to 26 atom% a = 2 to 8 atom% b = 2 to 8 atom Configured to be in the% range.

さらに、本発明の光磁気記録媒体は、垂直磁化可能な
低キュリー点を有する高保磁力膜と垂直磁化可能な高キ
ュリー点を有する低保磁力膜とを有し、該高保磁力膜と
該低保磁力膜とは交換結合している光磁気記録媒体であ
って、前記高保磁力膜はTbFe合金の層とTiの層とが原子
オーダーの厚さで交互に積層された膜であり、その平均
的な組成は(TbxFe100-x)100-aTiaの非晶質合金であり、
前記低保磁力層はGdFeCo合金の層とTiの層とが原子オー
ダーの厚さで交互に積層された膜であり、その平均的な
組成は{Gdz(FeyCo100-y)100-z100-bTibの非晶質合金
であり、x,y,z,a,bがそれぞれ x=20〜25 原子% y=50〜90 原子% z=20〜26 原子% a=2〜8 原子% b=2〜8 原子% の範囲にあるように構成される。
Further, the magneto-optical recording medium of the present invention has a high coercive force film having a low Curie point capable of perpendicular magnetization and a low coercive force film having a high Curie point capable of perpendicular magnetization, and the high coercive force film and the low coercive force film The magnetic film is a magneto-optical recording medium that is exchange-coupled, and the high coercive film is a film in which a TbFe alloy layer and a Ti layer are alternately laminated in an atomic order thickness, and its average The composition is an amorphous alloy of (Tb x Fe 100-x ) 100-a Ti a ,
The low coercive force layer is a film in which layers of GdFeCo alloy and layers of Ti are alternately laminated with an atomic order thickness, and the average composition thereof is {Gd z (Fe y Co 100-y ) 100- z } 100-b Ti b is an amorphous alloy in which x, y, z, a, and b are x = 20 to 25 atom% y = 50 to 90 atom% z = 20 to 26 atom% a = 2 -8 atom% b = 2-8 atom%

〔実施例〕〔Example〕

次に、本発明の実施例について図面を用いて説明す
る。
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を示す概略断面図である。 FIG. 1 is a schematic sectional view showing an embodiment of the present invention.

第1図に示す光磁気記録媒体は、基板1と、保護層2,
5と、垂直磁化可能な高キュリー点を有する低保磁力層
3と、垂直磁化可能な低キュリー点を有する高保磁力層
4とを含んで構成される。
The magneto-optical recording medium shown in FIG. 1 includes a substrate 1, a protective layer 2,
5, a low coercive force layer 3 having a high Curie point capable of perpendicular magnetization, and a high coercive force layer 4 having a low Curie point capable of perpendicular magnetization.

低保磁力層3と高保磁力層4とは交換結合している。 The low coercive force layer 3 and the high coercive force layer 4 are exchange-coupled.

基板1としてはエポキシ樹脂,ポリカーボネイト樹
脂,アクリル樹脂等の合成樹脂やガラスを用いることが
できる。垂直磁化可能な高キュリー点を有する低保磁力
層3はガドリニウム(Gd)と鉄(Fe)とコバルト(Co)
とチタン(Ti)の非晶質合金であり、第2図に一具体例
を示すように膜が被着される基板1の上にTi層12とGdFe
Co合金層11とが原子オーダーの厚さで交互に何十層にも
積層され全体として低保磁力膜3となっている。
As the substrate 1, synthetic resin such as epoxy resin, polycarbonate resin, acrylic resin, or glass can be used. The low coercive force layer 3 having a high Curie point capable of perpendicular magnetization is gadolinium (Gd), iron (Fe), and cobalt (Co).
And an amorphous alloy of titanium (Ti), a Ti layer 12 and GdFe are formed on a substrate 1 on which a film is deposited as shown in a specific example in FIG.
The Co alloy layer 11 and the Co alloy layer 11 are alternately laminated in dozens of layers with the thickness of the atomic order to form the low coercive force film 3 as a whole.

垂直磁化可能な低キュリー点を有する高保磁力膜4
は、テルビウム(Tb)と鉄(Fe)とチタン(Ti)の非晶
質合金であり、低保磁力膜3と同様に第2図の具体例で
示すようにTi層12とTbFe合金層13とが原子オーダーの厚
さで交互に何十層にも積層され全体として磁性膜となっ
ている。
High coercive force film 4 having a low Curie point capable of perpendicular magnetization
Is an amorphous alloy of terbium (Tb), iron (Fe) and titanium (Ti). As with the low coercive force film 3, as shown in the specific example of FIG. 2, the Ti layer 12 and the TbFe alloy layer 13 are And are alternately laminated in dozens of layers with an atomic thickness to form a magnetic film as a whole.

低保磁力膜3の組成 {Gdz(FeyCo100-y)100-z100-bTibおよび高保磁力
膜4の組成(TbxFe100-x)100-aTiaとしては、x,y,zは x=20〜25 原子% y=50〜90 原子% z=20〜26 原子% の範囲が、記録再生特性の観点で望ましい。
The composition of the low coercive force film 3 {Gd z (Fe y Co 100-y ) 100-z } 100-b Ti b and the composition of the high coercive force film 4 (Tb x Fe 100-x ) 100-a Ti a are It is desirable that x, y, z be in the range of x = 20 to 25 atom%, y = 50 to 90 atom%, z = 20 to 26 atom%, from the viewpoint of recording and reproducing characteristics.

a,bは a=2〜8 原子% b=2〜8 原子% の範囲が、記録再生特性の耐蝕性の観点で望ましい。It is desirable that a and b are in the range of a = 2 to 8 atomic% and b = 2 to 8 atomic% from the viewpoint of corrosion resistance of recording / reproducing characteristics.

以上述べたような原子オーダーの厚さで交互に何十層
にも積層された低保磁力膜3および高保磁力膜4の磁性
膜は第3図に示すようなスパッタ装置で作成することが
できる。
The magnetic films of the low coercive force film 3 and the high coercive force film 4 alternately laminated in dozens of layers with the thickness of the atomic order as described above can be formed by the sputtering apparatus as shown in FIG. .

第3図に示すスパッタ装置は、基板ホルダー31と、ス
パッタ源32,33と、スパッタターゲット34,35と、マスク
36とを含んで構成される。
The sputtering apparatus shown in FIG. 3 includes a substrate holder 31, sputtering sources 32 and 33, sputtering targets 34 and 35, and a mask.
It consists of 36 and.

基板ホルダー31には回転軸(O-O′)から離れて基板
1が同心円状に数枚取付けられている。
Several substrates 1 are concentrically attached to the substrate holder 31 apart from the rotation axis (OO ').

基板ホルダー31の対向位置にはスパッタ源32とスパッ
タ源33が設けてあり、それぞれにスパッタターゲット3
4,スパッタターゲット35がついている。スパッタ源32,3
3と基板ホルダー31との間には、スパッタ源32,33の真上
にしか成膜されないようにマスク36が設けられている。
A sputter source 32 and a sputter source 33 are provided at positions facing the substrate holder 31, and the sputter target 3
4, Sputter target 35 is attached. Sputter source 32,3
A mask 36 is provided between the substrate 3 and the substrate holder 31 so that a film is formed only right above the sputtering sources 32 and 33.

第3図に示すスパッタ装置で、スパッタ源32のスパッ
タターゲット34をGdFeCo、スパッタ源33のスパッタター
ゲット35をTiとし、各スパッタ源32,33へ投入するパワ
ーを調整し、各スパッタ源32,33の成膜速度を適度にし
て基板ホルダー31を回転しながら基板1に成膜すること
により、第2図に示すような原子オーダーの厚さで交互
に何十層にも積層された低保磁力膜3が作成できる。ス
パッタターゲット34をTbFe,スパッタターゲット35をTi
として同様に成膜することにより第2図に示すような原
子オーダーの厚さで交互に何十層にも積層された高保磁
力膜4が作製できる。このようにスパッタターゲット3
4,35をGdFeCoとTiとにわけていること、TbFeとTiとにわ
けていることのため、スパッタターゲット34,35を長期
間使用しても同じ特性の記録媒体が得られる。スパッタ
ターゲット34,35がGdFeCoTiあるいはTbFeTiで使用する
と長期間使用後には成膜速度が低下し、膜中の組成が初
期の値と変化してきてしまうため、記録媒体の特性が変
化してしまう。
In the sputtering apparatus shown in FIG. 3, the sputtering target 34 of the sputtering source 32 is GdFeCo, the sputtering target 35 of the sputtering source 33 is Ti, and the power input to the sputtering sources 32 and 33 is adjusted to adjust the sputtering sources 32 and 33. By forming a film on the substrate 1 while rotating the substrate holder 31 at an appropriate film forming speed, the low coercive force is alternately laminated in dozens of layers with an atomic order of thickness as shown in FIG. The membrane 3 can be created. Sputter target 34 is TbFe and sputter target 35 is Ti.
By similarly forming a film, a high coercive force film 4 having dozens of layers alternately stacked with an atomic order thickness as shown in FIG. 2 can be manufactured. Thus sputter target 3
Since 4,35 is divided into GdFeCo and Ti and TbFe and Ti, a recording medium having the same characteristics can be obtained even when the sputter targets 34 and 35 are used for a long time. When GdFeCoTi or TbFeTi is used as the sputter targets 34 and 35, the film formation rate decreases after long-term use, and the composition in the film changes from the initial value, which changes the characteristics of the recording medium.

次に、第1図に示す実施例の具体例について説明す
る。
Next, a specific example of the embodiment shown in FIG. 1 will be described.

まず、直径200mm,厚さ1.2mmの案内溝付エポキシディ
スクの基板1の上に保護膜2として窒化シリコン膜を80
0Å厚で成膜した。
First, a silicon nitride film was formed as a protective film 2 on a substrate 1 of an epoxy disk with a guide groove having a diameter of 200 mm and a thickness of 1.2 mm.
The film was formed with a thickness of 0Å.

次に、第3図に示すスパッタ装置でGdFeCoターゲット
とTiターゲットとを共スパッタすることによりGdFeCo合
金層11とTi層12とを原子オーダーの厚さで交互に何十層
にも積層し平均組成が原子%で23.0対58.4対14.6対4.0
対のGdFeCoTiの200Å厚の読出膜を形成した。(なお、
このときのTi層12は完全な層状にはなっていない)。
Next, by co-sputtering the GdFeCo target and the Ti target with the sputtering apparatus shown in FIG. 3, the GdFeCo alloy layer 11 and the Ti layer 12 are alternately laminated in dozens of layers in atomic order thickness, and the average composition Is 23.0 vs 58.4 vs 14.6 vs 4.0 in atomic%
A 200 Å thick readout film of a pair of GdFeCoTi was formed. (Note that
Ti layer 12 at this time is not a complete layer).

ひきつづきその上に、第3図に示すスパッタ装置でTb
FeターゲットとTiターゲットとを共スパッタすることに
よりTbFe合金層13とTi層12とを原子オーダーの厚さで交
互に何十層にも積層し平均組成が原子%で20.2対75.8対
4.0のTbFeTiの1000Å厚の書込膜を形成した。(なお、
このときのTi層12も完全な層状にはなっていない)。
Continue to use Tb with the sputtering device shown in Fig. 3.
By co-sputtering a Fe target and a Ti target, the TbFe alloy layer 13 and the Ti layer 12 are alternately laminated in dozens of layers with an atomic order thickness, and the average composition is 20.2 vs. 75.8 vs.
A 1000 Å thick writing film of 4.0 TbFeTi was formed. (Note that
Ti layer 12 at this time is also not completely layered).

最後に、その上に、窒化シリコン膜を800Å厚の保護
膜5として形成し、光磁気記録媒体を作製した。
Finally, a silicon nitride film was formed thereon as a protective film 5 having a thickness of 800 Å to prepare a magneto-optical recording medium.

この光磁気記録媒体を3600rpmで回転し、波長830nmの
半導体レーザを基板1を通して、照射し、記録周波数10
MHzの信号を11.6mWの記録パワーで記録し、3.9mWの再生
パワーで再生したところ、60dBのC/Nが得られ、高感度
で高C/Nの光磁気記録媒体であることが確認された。
This magneto-optical recording medium was rotated at 3600 rpm, and a semiconductor laser having a wavelength of 830 nm was radiated through the substrate 1 at a recording frequency of 10
When a MHz signal was recorded with a recording power of 11.6 mW and reproduced with a reproduction power of 3.9 mW, a C / N of 60 dB was obtained, and it was confirmed that the magneto-optical recording medium had high sensitivity and high C / N. It was

このときのGdFeCoターゲットの表面状態のときからス
パッタを多数回行ない1mm程度けずられたときに上記と
同じスパッタ条件で成膜して作製し、記録再生特性を同
様に測定して比較したところ、同じ結果が得られた。
Sputtering was performed many times from the surface state of the GdFeCo target at this time, and when it was offset by about 1 mm, the film was formed under the same sputtering conditions as above, and the recording and reproducing characteristics were measured and compared. Results were obtained.

比較のため、GdFeCoTiターゲットを用いて共スパッタ
せずに読出膜を形成し、TbFeTiターゲットを用いて共ス
パッタせずに書込膜を形成し、他は同様にして光磁気記
録媒体を作製し、記録再生特性を測定したところ60dBの
C/Nが得られ同じように良好であった。
For comparison, a read film was formed by using a GdFeCoTi target without co-sputtering, a write film was formed by using a TbFeTi target without co-sputtering, and a magneto-optical recording medium was produced in the same manner as above, When the recording and reproducing characteristics were measured, it was 60 dB.
C / N was obtained and was equally good.

しかしながら、GdFeCoTiターゲットが当初より1mm程
度けずられるほど使用した後に作製した光磁気記録媒体
はC/Nが低く、良好な記録再生特性が得られなかった。
However, the C / N of the magneto-optical recording medium prepared after using the GdFeCoTi target so as to deviate by about 1 mm from the beginning had a low C / N, and good recording / reproducing characteristics could not be obtained.

この原因は、ターゲット上のTi量が多くなり、そのよ
うなターゲットを用いてスパッタしたため、得られた膜
の組成が当初の値から変化したためである。
This is because the amount of Ti on the target increased and sputtering was performed using such a target, so that the composition of the obtained film changed from the initial value.

次に、上述のように作成された光磁気記録媒体を60℃
80%の高温高湿度雰囲気に500時間保存した後に、ビッ
トエラーレイト(BER)を測定したところ、BERの増加は
みられず、耐蝕性にすぐれていることが確認された。
Next, the magneto-optical recording medium prepared as described above is heated to 60 ° C.
The bit error rate (BER) was measured after 500 hours of storage in a high temperature and high humidity environment of 80%, and it was confirmed that the BER did not increase and the corrosion resistance was excellent.

GdFeCoあるいはTbFeの磁性層の繰り返し単位膜厚は、
成膜速度からの換算値で約2〜6Å程度の範囲が記録再
生特性の観点から望ましい。
The repeating unit film thickness of the magnetic layer of GdFeCo or TbFe is
From the viewpoint of recording and reproducing characteristics, a range of about 2 to 6Å converted from the film forming rate is desirable.

Tbの含有量を少なくすると記録感度が低下し記録ノイ
ズがやや増大しC/Nが低下するので、TbxFe100-xのxと
しては20〜25原子%がよい。
When the content of Tb is reduced, the recording sensitivity is lowered, the recording noise is slightly increased, and the C / N is lowered. Therefore, x of Tb x Fe 100-x is preferably 20 to 25 atomic%.

Gdz(FeyCo100-y)100-zにおいては、Coを少なくすると磁
気光学効果が低下し、Coを多くすると記録感度が低下す
るので、yとしては50〜90原子%がよく、Gdを少なくす
ると記録感度は上昇するが記録ノイズが増大してC/Nが
低下するので、zとしては20〜26原子%がよい。
In Gd z (Fe y Co 100-y ) 100-z , when Co is decreased, the magneto-optical effect is lowered, and when Co is increased, the recording sensitivity is lowered. Therefore, y is preferably 50 to 90 atomic%. If the ratio is decreased, the recording sensitivity is increased, but the recording noise is increased and the C / N is decreased, so that z is preferably 20 to 26 atomic%.

Tiの含有量は少ないと耐蝕性に問題が生じ、多いとC/
Nが低下するので、(TbxFe100-x)100-aTia及び{Gdz(Fey
Co100-y)100-z100-bTibのa,bとしては2〜8原子%が
望ましい。
If the Ti content is low, corrosion resistance will become a problem, and if it is high, C /
Since N decreases, (Tb x Fe 100-x ) 100-a Ti a and {Gd z (Fe y
Co 100-y ) 100-z } 100-b Ti b is preferably 2 to 8 atom% as a and b.

〔発明の効果〕〔The invention's effect〕

本発明の光磁気記録媒体は、チタン(Ti)を混入する
ことにより、高感度で高C/Nを維持したまま、高耐蝕性
を有せしめることができるという効果がある。
By mixing titanium (Ti), the magneto-optical recording medium of the present invention has an effect that it can have high corrosion resistance while maintaining high sensitivity and high C / N.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例を示す概略断面図、第2図は
第1図に示す実施例の一具体例を示す模式図、第3図は
第2図に示す高保磁力膜および低保磁力膜を作製するた
めのスパッタ装置の概略断面図である。 1……基板、2,5……保護膜、3……低保磁力膜、4…
…高保磁力膜、11……GdFeCo合金膜、12……Ti層、13…
…TbFe合金層、31……基板ホルダー、32,33……スパッ
タ源、34,35……スパッタターゲット、36……マスク。
FIG. 1 is a schematic sectional view showing an embodiment of the present invention, FIG. 2 is a schematic view showing one specific example of the embodiment shown in FIG. 1, and FIG. 3 is a high coercive force film and a low coercive force film shown in FIG. It is a schematic sectional drawing of the sputtering apparatus for producing a coercive force film. 1 ... Substrate, 2,5 ... Protective film, 3 ... Low coercive force film, 4 ...
… High coercive force film, 11 …… GdFeCo alloy film, 12 …… Ti layer, 13…
… TbFe alloy layer, 31 …… Substrate holder, 32, 33 …… Sputter source, 34, 35 …… Sputter target, 36 …… Mask.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−71960(JP,A) 特開 昭61−117747(JP,A) 特開 昭62−200551(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP 63-71960 (JP, A) JP 61-117747 (JP, A) JP 62-200551 (JP, A)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】垂直磁化可能な低キュリー点を有し(TbxFe
100-x)100-aTiaの非晶質合金からなる高保磁力層と垂直
磁化可能な高キュリー点を有し前記高保磁力層と交換結
合している{Gdz(FeyCo100-y)100-z100-bTibの非晶質
合金からなる低保磁力層とを含み、x,y,z,a,bがそれぞ
れ x=20〜25 原子% y=50〜90 原子% z=20〜26 原子% a=2〜8 原子% b=2〜8 原子% の範囲にあるように構成されたことを特徴とする光磁気
記録媒体。
1. A low Curie point capable of perpendicular magnetization (Tb x Fe
100-x ) 100-a Ti a high coercive force layer made of an amorphous alloy and a high Curie point capable of perpendicular magnetization and exchange coupled with the high coercive force layer {Gd z (Fe y Co 100-y ) 100-z } 100-b Ti b including a low coercive force layer made of an amorphous alloy, and x, y, z, a, and b are x = 20 to 25 atomic% and y = 50 to 90 atomic%, respectively. A magneto-optical recording medium, characterized in that z = 20 to 26 atomic% a = 2 to 8 atomic% b = 2 to 8 atomic%.
【請求項2】垂直磁化可能な低キュリー点を有しTbFe合
金層とTi層とが原子オーダーの厚さで交互に積層されそ
の平均的な組成が(TbxFe100-x)100-aTiaの非晶質合金で
ある高保磁力膜と、前記高保磁力膜と交換結合をなし垂
直磁化可能な高キュリー点を有しGdFeCo合金層とTi層と
が原子オーダーの厚さで交互に積層され、その平均的な
組成は{Gdz(FeyCo100-y)100-z100-bTibの非晶質合金
である低保磁力膜とを含み、前記x,y,z,a,bがそれぞれ x=20〜25 原子% y=50〜90 原子% z=20〜26 原子% a=2〜8 原子% b=2〜8 原子% の範囲にあるように構成されたことを特徴とする光磁気
記録媒体。
2. A TbFe alloy layer and a Ti layer having a low Curie point capable of perpendicular magnetization are alternately laminated in an atomic order thickness, and the average composition thereof is (Tb x Fe 100-x ) 100-a. A high coercive force film, which is an amorphous alloy of Ti a , and a GdFeCo alloy layer and a Ti layer, which have a high Curie point capable of perpendicular magnetization without being exchange-coupled with the high coercive force film, are alternately laminated in an atomic order thickness. And its average composition includes a low coercive force film which is an amorphous alloy of {Gd z (Fe y Co 100-y ) 100-z } 100-b Ti b , and the x, y, z, Each of a and b is configured to be in the range of x = 20 to 25 atomic% y = 50 to 90 atomic% z = 20 to 26 atomic% a = 2 to 8 atomic% b = 2 to 8 atomic%. A magneto-optical recording medium characterized by:
JP12560989A 1989-05-18 1989-05-18 Magneto-optical recording medium Expired - Lifetime JPH087886B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12560989A JPH087886B2 (en) 1989-05-18 1989-05-18 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12560989A JPH087886B2 (en) 1989-05-18 1989-05-18 Magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPH02304755A JPH02304755A (en) 1990-12-18
JPH087886B2 true JPH087886B2 (en) 1996-01-29

Family

ID=14914340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12560989A Expired - Lifetime JPH087886B2 (en) 1989-05-18 1989-05-18 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JPH087886B2 (en)

Also Published As

Publication number Publication date
JPH02304755A (en) 1990-12-18

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