JPH088244A - Semiconductor device - Google Patents

Abstract

(57) [Summary] The present invention relates to the following general formula (A) on the surface of the semiconductor element (1) or directly through another insulating layer (5). A polyamic acid solution containing at least 25 mol% of aromatic rings, Photosensitization containing (B) a photodegradable proton generator such as triphenylsulfonium trifluoromethanesulfonate and (C) a polyfunctional latent electrophilic agent such as 1,4-bis (acetoxymethyl) benzene as essential components A semiconductor device provided with an insulating layer (6) of a conductive resin composition. [Effects] The semiconductor device of the present invention is excellent in photosensitivity and resolution, simple, safe, and highly reliable by using a specific photosensitive resin composition.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a photosensitive polyimide resin insulating layer which is highly sensitive to irradiation with light or radiation and has excellent resolution.

[0002]

2. Description of the Related Art The element portion formed on the substrate surface of a semiconductor device is easily affected by the external environment. Therefore, a protective film is provided on the element surface to maintain reliability and the like. Conventionally, as such an organic protective film, a polyimide resin has come to be used in terms of film-forming properties, electrical characteristics, reliability, etc., and in particular, in recent years, an inorganic protective film and a polyimide resin film should be used together. Is becoming.

A semiconductor element having a protective film must be patterned on its surface, such as a through hole, or a pad to be electrically connected to external leads. Conventionally, the processing of the polyimide resin film has been performed with a strong alkali by a photo-etching process using a photoresist. This processing step is very complicated and takes a long time, and there is a problem in the toxicity of the etching solution. Therefore, in recent years, studies have been made to impart photosensitivity to the polyimide resin itself. A polyimide resin with photosensitivity does not require the use of a photoresist unlike a polyimide resin without photosensitivity, so the pattern creation process can be simplified and rationalized, and an etchant with high toxicity should be used. Since the patterning can be performed without using it, it is also excellent in safety and pollution, and the photosensitive polyimide resin is expected to become more important in the future.

As the photosensitive polyimide resin, for example, a photosensitive resin composition [R. E. Kerwin, et al. , Polymer Eng. &
Sci. , 11 (5), 426 pp (1971)] are known.
However, this system has the drawback that the electrical properties and reliability are reduced due to the presence of dichromate in the final polyimide resin film obtained, and that the polyamic acid gels during storage due to a dark reaction, and further, There was a drawback that hexavalent chromium was contained in the waste liquid discharged in the manufacturing process.

Further, Japanese Patent Publication No. 55-30207 and Japanese Patent Publication No. 55-4
1422 discloses a polyimide precursor composition having a structure represented by the following formula, in which a photosensitive group is introduced into an ester group.

[0006]

Embedded image (However, in the formula, n represents an integer of 1 or more.) The photosensitive polyimide resin of this system not only has a complicated manufacturing process of the resin itself but also involves a dehydrochlorination reaction at the stage of introducing a photosensitive group. However, there is a drawback that chlorine ions remain in the obtained polyimide resin, and the electrical characteristics and the reliability of the element using this resin film are poor.

Further, Japanese Patent Publication No. 54-145794 discloses a polyamic acid having a structure represented by the following formula:

[0008]

[Chemical 3] (In the formula, R ^a represents a tetravalent organic group, R ^b represents a divalent organic group, and R ^c represents an ester group.) A carbon-carbon double bond dimerizable or polymerizable by actinic radiation, Also, a composition added with a compound containing an amino group or a quaternized salt thereof is shown. Although the photosensitive polyimide resin of such a system does not have a problem of impurity ions, it has a sensitivity of several hundred to several thousand mJ / cm ² which is low for practical use, and the viscosity change during storage and the above There was a defect such as precipitation of the added compound.

[0009]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks, and it is possible to form a relief pattern on the surface of a semiconductor device by irradiation with light or radiation with high sensitivity and resolution. It is an object of the present invention to provide a semiconductor device provided with an insulating layer of a photosensitive resin composition, which is possible, and which has a simple manufacturing process and is safe in terms of environmental protection.

[0010]

Means for Solving the Problems The present inventor has conducted extensive studies to achieve the above-mentioned object, and as a result of studying various chemical structures of polymers, as a result of providing an insulating layer of the composition described below, The present invention has been completed by discovering that the above object can be achieved.

That is, the present invention provides (A) a solution of a polyamic acid represented by the following general formula on the surface of a semiconductor element directly or through another insulating layer:

[0012]

[Chemical 4] (However, in the formula, R ¹ represents a tetravalent acid component residue, R ² represents a divalent diamine component residue, n represents an integer of 1 or more, and at least 25 mol of R ¹ and R ² % Or more of residues include an aromatic ring) (B) A photodegradable proton generator and (C) a polyfunctional latent electrophilic agent It is a semiconductor device characterized by the above.

The present invention will be described in detail below.

The polyamic acid (A), which is one component of the photosensitive resin composition used in the present invention, is obtained by the reaction of an acid component and a diamine component. As a specific compound of the acid component used here, for example, pyromellitic acid,
1,2,3,4-benzenetetracarboxylic acid, 1,2,3,4-cyclobutanetetracarboxylic acid, 1,2,4,5-cyclopentanetetracarboxylic acid, 1,2,4,5-cyclohexanetetra Carboxylic acid, 3,3 ', 4,4'-bicyclohexyltetracarboxylic acid, 2,3,5-tricarboxycyclopentyl acetic acid, 3,4-dicarboxy-1,2,3,4-tetrahydronaphthalene-1- Succinic acid, 3,3 ', 4,4'-biphenyltetracarboxylic acid,
2,3,3 ', 4'-biphenyltetracarboxylic acid, 3,3', 4,
4'-benzophenone tetracarboxylic acid, 2,3,3 ', 4'
-Benzophenone tetracarboxylic acid, 3,3 ', 4,4'-biphenyl ether tetracarboxylic acid (4,4'-oxydiphthalic acid), 2,3,3', 4'-biphenyl ether tetracarboxylic acid, 2,2 -Bis (3,4-dicarboxyphenyl) propane, 2,2-bis (2,3-dicarboxyphenyl) propane, bis (3,4-dicarboxyphenyl) methane, bis (2,3-dicarboxyphenyl) ) Methane, 1,1-bis (2,3-
Dicarboxyphenyl) ethane, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane, 3,3 ′,
4,4'-diphenylsulfone tetracarboxylic acid, 2,3,
3 ', 4'-diphenylsulfone tetracarboxylic acid, 2,3,
6,7-naphthalene tetracarboxylic acid, 1,4,5,8-naphthalene tetracarboxylic acid, 1,2,5,6-naphthalene tetracarboxylic acid, 3,4,9,10-tetracarboxyperylene, 2,2 -Anhydrides such as bis [4- (3,4-dicarboxyphenoxy) phenyl] propane and 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane or lower alkyl esters thereof These may be used alone or in combination.

Specific examples of the diamine component include, as specific compounds, 4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane and 3,3 ', 5,5'. -Tetramethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5,5'-tetraethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-5,5'-diethyl-4,4' -Diaminodiphenylmethane, 4,4'-methylenebis (cyclohexylamine), 3,3'-dimethyl-4,4'-diaminodicyclohexylmethane, 3,3'-
Dimethoxy-4,4'-diaminodiphenylmethane, 3,3 '
-Diethoxy-4,4'-diaminodiphenylmethane, bis (3-aminophenyl) ether, bis (4-aminophenyl) ether, 3,4'-diaminodiphenylether,
3,3'-diethyl-4,4'-diaminodiphenyl ether, 3,3'-dimethoxy-4,4'-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl] ether, 3,3'-dimethyl -4,4'-diaminodiphenyl sulfone, 3,3'-diethyl-4,4'-diaminodiphenyl sulfone, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfone, 3,3'-diethoxy-4 , 4'-diaminodiphenyl sulfone, 3,3'-dimethyl-4,4'-diaminodiphenylpropane, 3,3'-diethyl-4,4'-diaminodiphenylpropane, 3,3'-dimethoxy-4,4 ′-
Diaminodiphenylpropane, 3,3'-diethoxy-4,
4'-diaminodiphenylpropane, 2,2-bis [4- (4-
Aminophenoxy) phenyl] propane, 1,3-bis (4-
Aminophenyl) propane, 2,2-bis (4-aminophenyl) propane, 4,4'-diaminodiphenylsulfide, 3,3'-dimethyl-4,4'-diaminodiphenylsulfide, 3,3'-diethyl- 4,4'-diaminodiphenyl sulfide, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfide, 3,3'-diethoxy-4,4'-diaminodiphenyl sulfide, 2,2'-diaminodiethyl sulfide, 2,4'-diaminodiphenyl sulfide, m-
Phenylenediamine, p-phenylenediamine, 1,3-bis (4-aminophenoxy) benzene, 1,2-bis (4-aminophenyl) ethane, 1,1-bis (4-aminophenyl) ethane, bis (3 -Aminophenyl) sulfone, bis (4-aminophenyl) sulfone, o-toluidine sulfone, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, 4,
4'-diaminodibenzyl sulfoxide, bis (4-aminophenyl) diethylsilane, bis (4-aminophenyl) diphenylsilane, bis (4-aminophenyl) ethylphosphine oxide, bis (4-aminophenyl) phenylphosphine oxide, Bis (4-aminophenyl)-
N-phenylamine, bis (4-aminophenyl) -N-
Methylamine, 1,2-diaminonaphthalene, 1,4-diaminonaphthalene, 1,5-diaminonaphthalene, 1,6-diaminonaphthalene, 1,7-diaminonaphthalene, 1,8-diaminonaphthalene, 2,3-diamino Naphthalene, 2,6-diaminonaphthalene, 1,4-diamino-2-methylnaphthalene, 1,5-diamino-2-methylnaphthalene, 1,3-diamino-2-phenylnaphthalene, 9,9-bis (4- Aminophenyl) fluorene,
4,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl,
3,3'-Dimethyl-4,4'-diaminobiphenyl, 3,4 '
-Dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 4,4'-bis (4-
Aminophenoxy) biphenyl, 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene, 3,
5-diaminotoluene, 1,3-diamino-2,5-dichlorobenzene, 1,4-diamino-2,5-dichlorobenzene, 1-methoxy-2,4-diaminobenzene, 1,3-diamino-4, 6-dimethylbenzene, 1,4-diamino-2,5-dimethylbenzene, 1,
4-diamino-2-methoxy-5-methylbenzene, 1,4-diamino-2,3,5,6-tetramethylbenzene, 1,4-bis (2-methoxy-4-aminopentyl) benzene, 1, 4-bis (1,1-
Dimethyl-5-aminopentyl) benzene, 1,4-bis (4-
Aminophenoxy) benzene, 3,5-diaminobenzoic acid,
2,5-diaminobenzoic acid, o-xylenediamine, m-xylenediamine, p-xylenediamine, 9,10-bis (4-aminophenyl) anthracene, 3,3′-diaminobenzophenone, 4,4′-diamino Benzophenone, 2,6-diaminopyridine, 3,5-diaminopyridine, 1,3-diaminoadamantane, 3,3′-diamino-1,1,1′-diadamantane, N- (3-aminophenyl) -4 -Aminobenzamide, 4,4'-diaminobenzanilide, 4-aminophenyl-3-aminobenzoate, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-aminophenyl) hexa Fluoropropane, 2- (3-aminophenyl) -2- (4-aminophenyl) hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [ 4- (2-chloro-4-aminophenyl Phenoxy) phenyl] hexafluoropropane,
1,1-bis (4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane, 1,1-bis [4- (4-aminophenoxy) phenyl] -1-phenyl-2,2 , 2-Trifluoroethane, 1,3-bis (3-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenyl) decafluoropropane, 2,2-bis (3-amino-4-hydroxy) Phenyl) hexafluoropropane, 2,2-bis (3-amino-4-methylphenyl) hexafluoropropane, 2,2-bis (5-amino-4-methylphenyl) hexafluoropropane, 1,4-
Examples thereof include bis (3-aminophenyl) but-1-en-3-yne, which may be used alone or in combination of two or more.

This polyamic acid is obtained by reacting the above-mentioned acid component and diamine component. At least one of the acid component and diamine component is 25 mol%.
A component containing an aromatic ring is used. If the content of the aromatic ring-containing component is less than 25 mol%, the reaction points of the polyfunctional latent electrophilic agent described below will decrease, and the sensitivity will be poor, such being undesirable.

This polyamic acid has a logarithmic viscosity in the range of 0.2 to 4.0 at 30 ° C. as a solution having a concentration of 0.5 g / 100 ml of N-methyl-2-pyrrolidone, and more preferably,
It is in the range of 0.3 to 2.0. The polyamic acid has an acid component and a diamine component in an organic solvent at 30 ° C. or lower, preferably 20.
It is obtained by carrying out an addition polymerization reaction at a reaction temperature of ℃ or less for 3 to 12 hours. As the organic solvent in this polymerization reaction, for example, N, N-dimethylsulfoxide, N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide,
Examples thereof include N-methyl-2-pyrrolidone and hexamethylenephosphoamide. These can be used alone or in combination of two or more. Depending on the acid component and diamine component used, it is also possible to synthesize a polyamic acid soluble in a general-purpose organic solvent, and in such a case, the polyamic acid obtained as described above is a poor solvent such as water or methanol. After being charged to the above to precipitate the polymer, it is sufficiently dried and then dissolved in a desired organic solvent to obtain a polyamic acid solution. The concentration of this polyamic acid solution may be appropriately determined depending on the purpose and method of use of the present invention, and is not particularly limited, but is usually 1 to 30%.

As the photodecomposable proton generator (B) which is one component of the photosensitive resin composition used in the present invention, allyl diazonium salt (Ar N ₂ ⁺ X ⁻ ) and diallyl iodonium salt (Ar ₂ I ⁺ X) are used. ^- ), Triallyl sulfonium salt (Ar ₃ S ⁺ X ⁻ ), aromatic sulfonic acid ester and the like, and these can be used alone or in combination of two or more kinds. The mixing ratio of the photodegradable proton generating agent is 1 to the solid content of the polyamic acid solution described above.
It is desirable to add 50% by weight. Preferably 5 to 20
It is within the range of weight%. If the amount is less than 1% by weight, the acid generation rate will be slow and sufficient sensitivity will not be obtained.
If it exceeds 5% by weight, the storage stability of the resin composition deteriorates, which is not preferable.

The polyfunctional latent electrophilic agent (C), which is one component of the photosensitive resin composition used in the present invention, is an electrophilic substitution such as carbocation with an acid generated from the photodegradable proton generator described above. The functional group capable of reacting is not particularly limited as long as it produces two or more functional groups in one molecule, but preferably the blocking acid is liberated when the carbocation is produced. Those are preferable. Specific compounds include, for example, 1,4-bis (acetoxymethyl) benzene, 1,3,5-tri (acetoxymethyl) benzene, 3,4-bis (acetoxymethyl) furan,
Examples include 1,4-bis (sulfoxymethyl) benzene, 1,3,5-tri (sulfoxymethyl) benzene, and 3,4-bis (sulfoxymethyl) furan, which may be used alone or
A mixture of two or more species can be used. The compounding ratio of the polyfunctional latent electrophilic agent is in the range of 1 to 50% by weight, preferably 50 to 20% by weight, based on the solid content of the polyamic acid. If the blending amount is less than 1% by weight, the cross-linking density between molecules becomes small, and sufficient sensitivity and resolution cannot be obtained.
When it exceeds 50% by weight, the storage stability of the resin composition and the physical properties of the finally obtained polyimide resin film are deteriorated, which is not preferable.

The photosensitive resin composition used in the present invention can be easily produced by blending the above-mentioned polyamic acid solution, photodegradable proton generating agent, and polyfunctional latent electrophilic agent. Further, although each of the above-mentioned components is an essential component, other additives can be blended within a range not deviating from the object of the present invention. The photosensitive resin composition thus obtained is
In addition to the surface protective film for C and LSI, it can be suitably used for an interlayer insulating film, an alignment film for liquid crystal, and the like.

Next, using the photosensitive resin composition of the present invention,
An example of manufacturing a semiconductor device by forming a relief pattern on the surface of a semiconductor element will be described. First, a photosensitive resin composition is prepared by mixing a polyamic acid solution, a photodegradable proton generator and a polyfunctional latent electrophilic agent. This composition is applied on a semiconductor substrate by a conventional method such as spin coating or printing and dried to remove the organic solvent. Then, the obtained coating film is exposed through a negative type photomask with, for example, a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a xenon lamp or the like. After exposure, development is performed by spraying a developing solution to remove the unexposed portion or immersing the substrate in the developing solution. The developing solution is preferably an organic solvent capable of dissolving and removing the unexposed area in the coating film within an appropriate time, and examples thereof include N, N-dimethyl sulfoxide and N, N.
-Dimethylformamide, N, N-diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylenephosphoamide, etc., alone or mixed, and further added to these good solvents. On the other hand, a poor solvent such as methanol, ethanol, isopropanol, ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol or acetic acid isoamyl ester may be mixed to adjust the solubility before use. After development, a relief pattern can be formed by washing the substrate with an appropriate rinse solution. As the rinse liquid used here, methanol, ethanol, isopropanol, ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, acetic acid isoamyl ester or the like can be used alone or in combination. The substrate on which the relief pattern is obtained is 150 to 400 ° C, preferably 200 to 350 ° C.
The polyamic acid is cured into a polyimide by heat treatment for 60 to 90 minutes under. In this way, a relief pattern having heat resistance, insulation, etc. can be obtained.

After that, the semiconductor is sealed with epoxy resin, diallyl phthalate resin, phenol resin, unsaturated polyester resin, silicone resin or the like by casting, transfer molding, injection molding or the like to have a thickness of about 0.5 to 5 mm, and a semiconductor. The device can be manufactured.

Next, the semiconductor device of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic sectional view for explaining a semiconductor device. In FIG. 1, for example, a pnp type transistor is formed on the surface of a semiconductor element 1 such as silicon. A silicon dioxide film 2 for protecting the junction between the emitter and the base is formed on the surface of the semiconductor element 1, and a base electrode 3 and an emitter electrode 4 are formed by an aluminum vapor deposition film. A silicon nitride vapor deposition film 5 which is an inorganic protective film is formed on the surface of this semiconductor element, and a photosensitive resin composition is further patterned on the upper surface thereof by the above-described method so that holes are formed on the emitter electrode 4. The protective film layer 6 is formed. Then, the silicon nitride vapor deposition film 5 is etched with strong hydrofluoric acid to form a bonding pad on the emitter electrode 4. After that, the electrode of the semiconductor element and the lead wire,
Bonding is performed with a gold or aluminum bonding wire 7. When the planar type transistor is sealed, the semiconductor element 1 is fixed to the tip of the tab lead 8 and the semiconductor element 1 including the tip of the tab lead 8 is sealed in order to provide mechanical strength and to protect it from the outside air. Seal with resin 9. In this way, a semiconductor device can be manufactured.

[0025]

In the semiconductor device of the present invention, by using the specific photosensitive resin composition as the insulating protective film, the insulating protection of the relief pattern on the semiconductor element can be performed without using the photoetching process using the conventional photoresist. A film is obtained. A specific photosensitive resin composition is a benzene ring in the polyamic acid main chain, which undergoes an electrophilic substitution reaction with a cross-linking agent capable of generating two or more carbocations in one molecule to cross-link polyamic acid molecules. As a result, a difference in solubility between the exposed portion and the unexposed portion appears in the developing solution. As a result, compared with photosensitive polyimide, which has polymerized double bonds such as acrylic, which is a photosensitive group with a conventional radical, and caused a difference in solubility between exposed and unexposed areas, a relief with high sensitivity and high resolution. A pattern can be formed. further,
Since a relief pattern is obtained in the state of polyamic acid and then a polyimide film is formed by thermal conversion, there is an advantage that a pattern with high adhesion can be obtained. Further, the manufacturing process of the semiconductor device has been shortened, and the highly reliable semiconductor device can be manufactured by the manufacturing process of the process which is advantageous for pollution and environmental problems.

[0026]

EXAMPLES Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

Example 1 Dry nitrogen was passed through a flask equipped with a stirrer, a condenser and a nitrogen inlet tube to replace the inside of the flask, and then 20.02 g of 4,4'-diaminodiphenyl ether and 423.36 g of N-methyl-2-pyrrolidone were added. Dissolved. To this solution, a mixture of 10.91 g of pyromellitic dianhydride and 16.11 g of 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride as a powder,
While paying attention to heat generation, it was added in several portions. While suppressing the heat generated by the reaction in an ice bath, stirring was continued for 8 hours to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solvent of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder is N
-Methyl-2-pyrrolidone 0.5 g / 100 ml Dissolved to a concentration and measured the logarithmic viscosity at 30 ° C, 1.23 dl / g
Met. To 100 g of this polyamic acid solution was added triphenylsulfonium trifluoromethanesulfonate.
1.0 g and 1,4-bis (acetoxymethyl) benzene 1.5 g
Was dissolved and pressure-filtered with a 1.0 μm filter to produce a photosensitive resin composition.

Example 2 Dry nitrogen was passed through a flask equipped with a stirrer, a condenser and a nitrogen inlet tube to replace the inside of the flask, and then, 41.05 g of 2,2'-bis [4- (4-aminophenoxy) phenyl] propane
And N, N-dimethylacetamide (648.63 g) were added and dissolved. Add 41.0 oxydiphthalic dianhydride 31.0 to this solution.
2 g of the powder was added in several divided portions while paying attention to heat generation. While suppressing the heat generated by the reaction in an ice bath, stirring was continued for 12 hours to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solvent of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder was added to N-methyl-2-pyrrolidone 0.5g / 10
It was dissolved so that the concentration was 0 ml, and the logarithmic viscosity at 30 ° C. was measured to be 0.95 dl / g. The polyamic acid powder was dissolved in cyclohexanone so that the solid content was 10% to obtain a polyamic acid solution. 1.5 g of diphenyliodonium trifluoromethanesulfonate and 2.0 g of 1,4-bis (acetoxymethyl) benzene were dissolved in 100 g of this polyamic acid solution, and pressure filtration was performed with a 1.0 μm filter to produce a photosensitive resin composition. .

Comparative Example 1 To 100 g of the polyamic acid solution obtained in Example 1,
2- (N, N-dimethylamino) ethyl methacrylate
8.23g and IRGACURE907 which is a radical generator
(Ciba Geigy, trade name) 1.0g
A photosensitive resin composition was manufactured by performing pressure filtration with a 1.0 μm filter.

Comparative Example 2 100 g of the polyamic acid solution obtained in Example 1 was used as it was.

Using the photosensitive resin composition and the polyamic acid solution (Comparative Example 2) produced in the Examples and Comparative Examples, an insulating protective film was formed on the surface of the semiconductor element by using a process compatible with each of them, and sealing was performed. A semiconductor device sealed with a resin was manufactured. With respect to these semiconductor devices, a simple manufacturing process and a moisture resistance test were conducted, and electrical characteristics of the polyimide resin film were measured. The results are shown in Table 1. In any case, the present invention is excellent,
The effect of the present invention could be confirmed.

[0032]

[Table 1]

[0033]

As is apparent from the above description, the semiconductor device of the present invention uses the specific photosensitive resin composition as the insulating film, and thus is highly sensitive, excellent in resolution, and simple. It is possible to manufacture a highly reliable device by a safe process.

[Brief description of drawings]

FIG. 1 is a schematic sectional view for explaining a semiconductor device of the present invention.

[Explanation of reference symbols] 1 semiconductor element 2 silicon dioxide film 3 base electrode 4 emitter electrode 5 silicon nitride vapor deposition film 6 insulating protective film (organic protective film) 7 bonding wire 8 tab lead 9 sealing resin

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 21/027 // H05K 3/06 H

Claims (1)

[Claims] 1. A solution of (A) a polyamic acid represented by the following general formula, directly on the surface of a semiconductor element or through another insulating layer: (However, in the formula, R ¹ represents a tetravalent acid component residue, R ² represents a divalent diamine component residue, n represents an integer of 1 or more, and at least 25 mol of R ¹ and R ² % Or more of residues include an aromatic ring) (B) A photodegradable proton generator and (C) a polyfunctional latent electrophilic agent A semiconductor device characterized by the above.