JPH086250A - Photosensitive resin composition - Google Patents
Photosensitive resin compositionInfo
- Publication number
- JPH086250A JPH086250A JP6159126A JP15912694A JPH086250A JP H086250 A JPH086250 A JP H086250A JP 6159126 A JP6159126 A JP 6159126A JP 15912694 A JP15912694 A JP 15912694A JP H086250 A JPH086250 A JP H086250A
- Authority
- JP
- Japan
- Prior art keywords
- bis
- polyimide resin
- solution
- acid
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title description 16
- 229920001721 polyimide Polymers 0.000 claims abstract description 50
- 239000009719 polyimide resin Substances 0.000 claims abstract description 47
- 239000002253 acid Substances 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 150000004985 diamines Chemical class 0.000 claims abstract description 8
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 6
- 230000036211 photosensitivity Effects 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 47
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 42
- 229920005575 poly(amic acid) Polymers 0.000 description 32
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 26
- 239000000843 powder Substances 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 16
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 15
- -1 chlorine ions Chemical class 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000003960 organic solvent Substances 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 9
- 229910052753 mercury Inorganic materials 0.000 description 9
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 7
- 239000012046 mixed solvent Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical group C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- AMUSNJQKNUGRRF-UHFFFAOYSA-N [4-(acetyloxymethyl)phenyl]methyl acetate Chemical compound CC(=O)OCC1=CC=C(COC(C)=O)C=C1 AMUSNJQKNUGRRF-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007363 ring formation reaction Methods 0.000 description 3
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- RHRNYXVSZLSRRP-UHFFFAOYSA-N 3-(carboxymethyl)cyclopentane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CC1C(C(O)=O)CC(C(O)=O)C1C(O)=O RHRNYXVSZLSRRP-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- HJSYPLCSZPEDCQ-UHFFFAOYSA-N 5-[2-(3-amino-4-methylphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-methylaniline Chemical compound C1=C(N)C(C)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C)C(N)=C1 HJSYPLCSZPEDCQ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- JTUPDNAWXLSTQJ-UHFFFAOYSA-N [3,5-bis(acetyloxymethyl)phenyl]methyl acetate Chemical compound CC(=O)OCC1=CC(COC(C)=O)=CC(COC(C)=O)=C1 JTUPDNAWXLSTQJ-UHFFFAOYSA-N 0.000 description 2
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 238000007336 electrophilic substitution reaction Methods 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- YFOOEYJGMMJJLS-UHFFFAOYSA-N 1,8-diaminonaphthalene Chemical compound C1=CC(N)=C2C(N)=CC=CC2=C1 YFOOEYJGMMJJLS-UHFFFAOYSA-N 0.000 description 1
- MPXKIFWZOQVOLN-UHFFFAOYSA-N 1-(1-adamantyl)adamantane Chemical compound C1C(C2)CC(C3)CC2CC13C(C1)(C2)CC3CC2CC1C3 MPXKIFWZOQVOLN-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- BAHPQISAXRFLCL-UHFFFAOYSA-N 2,4-Diaminoanisole Chemical compound COC1=CC=C(N)C=C1N BAHPQISAXRFLCL-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- UONVFNLDGRWLKF-UHFFFAOYSA-N 2,5-diaminobenzoic acid Chemical compound NC1=CC=C(N)C(C(O)=O)=C1 UONVFNLDGRWLKF-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- FNJYNTJIZBHPGP-UHFFFAOYSA-N 2,5-dichlorobenzene-1,3-diamine Chemical compound NC1=CC(Cl)=CC(N)=C1Cl FNJYNTJIZBHPGP-UHFFFAOYSA-N 0.000 description 1
- QAYVHDDEMLNVMO-UHFFFAOYSA-N 2,5-dichlorobenzene-1,4-diamine Chemical compound NC1=CC(Cl)=C(N)C=C1Cl QAYVHDDEMLNVMO-UHFFFAOYSA-N 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- JONTXEXBTWSUKE-UHFFFAOYSA-N 2-(2-aminoethylsulfanyl)ethanamine Chemical compound NCCSCCN JONTXEXBTWSUKE-UHFFFAOYSA-N 0.000 description 1
- HDGLPTVARHLGMV-UHFFFAOYSA-N 2-amino-4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenol Chemical compound NC1=CC(C(C(F)(F)F)C(F)(F)F)=CC=C1O HDGLPTVARHLGMV-UHFFFAOYSA-N 0.000 description 1
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- KNRVAYVZVIKHHL-UHFFFAOYSA-N 2-methoxy-5-methylbenzene-1,4-diamine Chemical compound COC1=CC(N)=C(C)C=C1N KNRVAYVZVIKHHL-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- BCKLPBBBFNWJHH-UHFFFAOYSA-N 2-methylnaphthalene-1,4-diamine Chemical compound C1=CC=CC2=C(N)C(C)=CC(N)=C21 BCKLPBBBFNWJHH-UHFFFAOYSA-N 0.000 description 1
- AWCQGTAMYBFTTN-UHFFFAOYSA-N 2-methylnaphthalene-1,5-diamine Chemical compound NC1=CC=CC2=C(N)C(C)=CC=C21 AWCQGTAMYBFTTN-UHFFFAOYSA-N 0.000 description 1
- IJTBLNVJSBGHPF-UHFFFAOYSA-N 2-phenylnaphthalene-1,3-diamine Chemical compound NC1=CC2=CC=CC=C2C(N)=C1C1=CC=CC=C1 IJTBLNVJSBGHPF-UHFFFAOYSA-N 0.000 description 1
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical group C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- MHQULXYNBKWNDF-UHFFFAOYSA-N 3,4-dimethylbenzene-1,2-diamine Chemical compound CC1=CC=C(N)C(N)=C1C MHQULXYNBKWNDF-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- TYKLCAKICHXQNE-UHFFFAOYSA-N 3-[(2,3-dicarboxyphenyl)methyl]phthalic acid Chemical compound OC(=O)C1=CC=CC(CC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O TYKLCAKICHXQNE-UHFFFAOYSA-N 0.000 description 1
- UCFMKTNJZCYBBJ-UHFFFAOYSA-N 3-[1-(2,3-dicarboxyphenyl)ethyl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)C1=CC=CC(C(O)=O)=C1C(O)=O UCFMKTNJZCYBBJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- UVUCUHVQYAPMEU-UHFFFAOYSA-N 3-[2-(3-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound NC1=CC=CC(C(C=2C=C(N)C=CC=2)(C(F)(F)F)C(F)(F)F)=C1 UVUCUHVQYAPMEU-UHFFFAOYSA-N 0.000 description 1
- DOAYUKLNEKRLCQ-UHFFFAOYSA-N 3-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=CC(N)=C1 DOAYUKLNEKRLCQ-UHFFFAOYSA-N 0.000 description 1
- SPXABFZECXRZBT-UHFFFAOYSA-N 3-[3-(3-aminophenyl)-1,1,2,2,3,3-hexafluoropropyl]aniline Chemical compound NC1=CC=CC(C(F)(F)C(F)(F)C(F)(F)C=2C=C(N)C=CC=2)=C1 SPXABFZECXRZBT-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- ZRJAHFLFCRNNMR-UHFFFAOYSA-N 3-amino-2-(4-aminophenyl)benzoic acid Chemical compound C1=CC(N)=CC=C1C1=C(N)C=CC=C1C(O)=O ZRJAHFLFCRNNMR-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- DCSSXQMBIGEQGN-UHFFFAOYSA-N 4,6-dimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C=C1N DCSSXQMBIGEQGN-UHFFFAOYSA-N 0.000 description 1
- SQNMHJHUPDEXMS-UHFFFAOYSA-N 4-(1,2-dicarboxyethyl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=C2C(C(CC(=O)O)C(O)=O)CC(C(O)=O)C(C(O)=O)C2=C1 SQNMHJHUPDEXMS-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- BKQWDTFZUNGWNV-UHFFFAOYSA-N 4-(3,4-dicarboxycyclohexyl)cyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1C1CC(C(O)=O)C(C(O)=O)CC1 BKQWDTFZUNGWNV-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- FPNXMUZTKHUSRQ-UHFFFAOYSA-N 4-(4-amino-4-methylcyclohexa-1,5-dien-1-yl)-2-methylaniline Chemical group C1=C(N)C(C)=CC(C=2C=CC(C)(N)CC=2)=C1 FPNXMUZTKHUSRQ-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- OSGFBINRYVUILV-UHFFFAOYSA-N 4-[(4-aminophenyl)-diethylsilyl]aniline Chemical compound C=1C=C(N)C=CC=1[Si](CC)(CC)C1=CC=C(N)C=C1 OSGFBINRYVUILV-UHFFFAOYSA-N 0.000 description 1
- BLMSGSGJGUHKFW-UHFFFAOYSA-N 4-[(4-aminophenyl)-diphenylsilyl]aniline Chemical compound C1=CC(N)=CC=C1[Si](C=1C=CC(N)=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BLMSGSGJGUHKFW-UHFFFAOYSA-N 0.000 description 1
- NMLVVZNIIWJNTI-UHFFFAOYSA-N 4-[(4-aminophenyl)-ethylphosphoryl]aniline Chemical compound C=1C=C(N)C=CC=1P(=O)(CC)C1=CC=C(N)C=C1 NMLVVZNIIWJNTI-UHFFFAOYSA-N 0.000 description 1
- KTZLSMUPEJXXBO-UHFFFAOYSA-N 4-[(4-aminophenyl)-phenylphosphoryl]aniline Chemical compound C1=CC(N)=CC=C1P(=O)(C=1C=CC(N)=CC=1)C1=CC=CC=C1 KTZLSMUPEJXXBO-UHFFFAOYSA-N 0.000 description 1
- XESBFJAZUUSMGS-UHFFFAOYSA-N 4-[1-(4-aminophenyl)-2,2,2-trifluoro-1-phenylethyl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C=1C=CC(N)=CC=1)C1=CC=CC=C1 XESBFJAZUUSMGS-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- ASNOFHCTUSIHOM-UHFFFAOYSA-N 4-[10-(4-aminophenyl)anthracen-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N)C=C1 ASNOFHCTUSIHOM-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- UHNUHZHQLCGZDA-UHFFFAOYSA-N 4-[2-(4-aminophenyl)ethyl]aniline Chemical compound C1=CC(N)=CC=C1CCC1=CC=C(N)C=C1 UHNUHZHQLCGZDA-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- BMIUMBLWVWZIHD-UHFFFAOYSA-N 4-[3-(4-aminophenyl)propyl]aniline Chemical compound C1=CC(N)=CC=C1CCCC1=CC=C(N)C=C1 BMIUMBLWVWZIHD-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- HWEMDPIPVVFWCB-UHFFFAOYSA-N 4-[4-[1-[4-(4-aminophenoxy)phenyl]-2,2,2-trifluoro-1-phenylethyl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC=CC=2)(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C(F)(F)F)C=C1 HWEMDPIPVVFWCB-UHFFFAOYSA-N 0.000 description 1
- IOUVQFAYPGDXFG-UHFFFAOYSA-N 4-[4-[2-[4-(3,4-dicarboxyphenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=C(C(C(O)=O)=CC=3)C(O)=O)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 IOUVQFAYPGDXFG-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- HWKHQQCBFMYAJZ-UHFFFAOYSA-N 4-amino-n-(3-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1C(=O)NC1=CC=CC(N)=C1 HWKHQQCBFMYAJZ-UHFFFAOYSA-N 0.000 description 1
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 1
- LBNFPUAJWZYIOQ-UHFFFAOYSA-N 4-n-(4-aminophenyl)-4-n-methylbenzene-1,4-diamine Chemical compound C=1C=C(N)C=CC=1N(C)C1=CC=C(N)C=C1 LBNFPUAJWZYIOQ-UHFFFAOYSA-N 0.000 description 1
- YFBMJEBQWQBRQJ-UHFFFAOYSA-N 4-n-(4-aminophenyl)-4-n-phenylbenzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1N(C=1C=CC(N)=CC=1)C1=CC=CC=C1 YFBMJEBQWQBRQJ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- BWBOGCDVWRKHOK-UHFFFAOYSA-N 5-[4-(4-amino-2-methoxypentyl)phenyl]-4-methoxypentan-2-amine Chemical compound CC(N)CC(OC)CC1=CC=C(CC(CC(C)N)OC)C=C1 BWBOGCDVWRKHOK-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- LVNDUJYMLJDECN-UHFFFAOYSA-N 5-methylbenzene-1,3-diamine Chemical compound CC1=CC(N)=CC(N)=C1 LVNDUJYMLJDECN-UHFFFAOYSA-N 0.000 description 1
- QCUILKXHNQWXPR-UHFFFAOYSA-N ClC1(C(OC2=CC=C(C=C2)C(C(F)(F)F)(C(F)(F)F)C2=CC=C(C=C2)OC2C(C=CC=C2)(Cl)C2=CC=C(C=C2)N)C=CC=C1)C1=CC=C(C=C1)N Chemical compound ClC1(C(OC2=CC=C(C=C2)C(C(F)(F)F)(C(F)(F)F)C2=CC=C(C=C2)OC2C(C=CC=C2)(Cl)C2=CC=C(C=C2)N)C=CC=C1)C1=CC=C(C=C1)N QCUILKXHNQWXPR-UHFFFAOYSA-N 0.000 description 1
- ZPAKUZKMGJJMAA-UHFFFAOYSA-N Cyclohexane-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)CC1C(O)=O ZPAKUZKMGJJMAA-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 1
- GWGJRTPEWKEJGD-UHFFFAOYSA-N NC=1C=C(C=CC1)C(=CC#C)C1=CC(=CC=C1)N Chemical compound NC=1C=C(C=CC1)C(=CC#C)C1=CC(=CC=C1)N GWGJRTPEWKEJGD-UHFFFAOYSA-N 0.000 description 1
- IVPSAKGWBXJSMZ-UHFFFAOYSA-N O(S(=O)(=O)O)CC1=CC(=CC(=C1)COS(=O)(=O)O)COS(=O)(=O)O Chemical compound O(S(=O)(=O)O)CC1=CC(=CC(=C1)COS(=O)(=O)O)COS(=O)(=O)O IVPSAKGWBXJSMZ-UHFFFAOYSA-N 0.000 description 1
- RGEQTTQRHDKYJM-UHFFFAOYSA-N O(S(=O)(=O)O)CC1=COC=C1COS(=O)(=O)O Chemical compound O(S(=O)(=O)O)CC1=COC=C1COS(=O)(=O)O RGEQTTQRHDKYJM-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- BNXMUMXYSWMXEC-UHFFFAOYSA-N [4-(acetyloxymethyl)furan-3-yl]methyl acetate Chemical compound CC(=O)OCC1=COC=C1COC(C)=O BNXMUMXYSWMXEC-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- FOLJMFFBEKONJP-UHFFFAOYSA-N adamantane-1,3-diamine Chemical compound C1C(C2)CC3CC1(N)CC2(N)C3 FOLJMFFBEKONJP-UHFFFAOYSA-N 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- TUQQUUXMCKXGDI-UHFFFAOYSA-N bis(3-aminophenyl)methanone Chemical compound NC1=CC=CC(C(=O)C=2C=C(N)C=CC=2)=C1 TUQQUUXMCKXGDI-UHFFFAOYSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007033 dehydrochlorination reaction Methods 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- OKBVMLGZPNDWJK-UHFFFAOYSA-N naphthalene-1,4-diamine Chemical compound C1=CC=C2C(N)=CC=C(N)C2=C1 OKBVMLGZPNDWJK-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- WSKHYOXDVZCOJP-UHFFFAOYSA-N naphthalene-1,6-diamine Chemical compound NC1=CC=CC2=CC(N)=CC=C21 WSKHYOXDVZCOJP-UHFFFAOYSA-N 0.000 description 1
- ZDWYJINCYGEEJB-UHFFFAOYSA-N naphthalene-1,7-diamine Chemical compound C1=CC=C(N)C2=CC(N)=CC=C21 ZDWYJINCYGEEJB-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- XTBLDMQMUSHDEN-UHFFFAOYSA-N naphthalene-2,3-diamine Chemical compound C1=CC=C2C=C(N)C(N)=CC2=C1 XTBLDMQMUSHDEN-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- RNVCVTLRINQCPJ-UHFFFAOYSA-N ortho-methyl aniline Natural products CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical group C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- ABYXFACYSGVHCW-UHFFFAOYSA-N pyridine-3,5-diamine Chemical compound NC1=CN=CC(N)=C1 ABYXFACYSGVHCW-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光又は放射線などの照
射により高感度でレリーフパターンを形成することが可
能な感光性樹脂組成物に関する。TECHNICAL FIELD The present invention relates to a photosensitive resin composition capable of forming a relief pattern with high sensitivity by irradiation with light or radiation.
【0002】[0002]
【従来の技術】従来から、ポリイミド樹脂は耐熱性、電
気特性等に優れた特性を有する高分子材料として知られ
ており、半導体の表面保護膜、層間絶縁膜などに利用さ
れている。これらのポリイミド樹脂膜はフォトレジスト
等を用いたフォトエッチングプロセスを用いて微細加工
をしなければならず、このためこの樹脂に感光性を付与
する研究がなされている。感光性を付与したポリイミド
樹脂は、感光性を持たないポリイミド樹脂に比較してパ
ターン作成プロセスの簡素化、合理化ができるだけでな
く、毒性の強いエッチング液を使用しなくてよいため、
安全、公害上にも優れており、今後一層重要性が増すも
のと思われる。2. Description of the Related Art Conventionally, a polyimide resin has been known as a polymer material having excellent properties such as heat resistance and electrical properties, and is used as a surface protective film for semiconductors and an interlayer insulating film. These polyimide resin films must be microfabricated by using a photoetching process using a photoresist or the like, and therefore, studies have been made to impart photosensitivity to this resin. Since the polyimide resin with photosensitivity can simplify and rationalize the pattern forming process as compared with the polyimide resin without photosensitivity, it is not necessary to use a highly toxic etching solution.
It is also excellent in safety and pollution, and is expected to become even more important in the future.
【0003】感光性を持つポリイミド樹脂としては、例
えばポリイミド樹脂の前駆体であるポリアミック酸の極
性溶媒溶液に重クロム酸塩を添加してなる感光性樹脂組
成物[R.E.Kerwin, et al.,Polymer Eng.&
Sci.,11(5),426 pp(1971)]が知られている。
しかし、この系は、得られる最終ポリイミド樹脂膜中に
重クロム酸塩が残るために電気特性や信頼性が低下する
欠点、また、暗反応によって保存中にポリアミック酸が
ゲル化する欠点、さらに、製造工程で排出される廃液中
に 6価クロムが含まれる欠点があった。As the photosensitive polyimide resin, for example, a photosensitive resin composition [R. E. Kerwin, et al. , Polymer Eng. &
Sci. , 11 (5), 426 pp (1971)] are known.
However, this system has the drawback that the electrical properties and reliability are reduced due to the presence of dichromate in the final polyimide resin film obtained, and that the polyamic acid gels during storage due to a dark reaction, and further, There was a drawback that hexavalent chromium was contained in the waste liquid discharged in the manufacturing process.
【0004】また、特公昭55-30207号公報、特公昭55-4
1422号公報等には、次式で示される構造の、エステル基
に感光性基を導入したポリイミド前駆体組成物が示され
ている。Further, Japanese Patent Publication No. 55-30207 and Japanese Patent Publication No. 55-4
1422 discloses a polyimide precursor composition having a structure represented by the following formula, in which a photosensitive group is introduced into an ester group.
【0005】[0005]
【化2】 (但し、式中n は、1 以上の整数を表す) この系の感光性ポリイミド樹脂は、樹脂そのものの製造
工程が複雑であるばかりでなく、感光性基を導入する段
階で脱塩酸反応を伴うため、得られるポリイミド樹脂膜
中に塩素イオンが残り、電気特性やこの樹脂を使用した
素子の信頼性が悪いという欠点があった。Embedded image (However, in the formula, n represents an integer of 1 or more.) The photosensitive polyimide resin of this system not only has a complicated manufacturing process of the resin itself but also involves dehydrochlorination reaction at the stage of introducing a photosensitive group. Therefore, there is a drawback that chlorine ions remain in the obtained polyimide resin film and the electrical characteristics and the reliability of an element using this resin are poor.
【0006】さらに、特公昭 54-145794号公報には、次
式で示される構造のポリアミック酸に、Further, Japanese Patent Publication No. 54-145794 discloses a polyamic acid having a structure represented by the following formula:
【0007】[0007]
【化3】 (但し、式中Ra は4 価の有機基を、Rb は2 価の有機
基を、Rc はエステル基をそれぞれ表す) 化学線により二量化または重合可能な炭素−炭素二重結
合、および、アミノ基またはその四級化塩を含む化合物
を添加した組成物が示されている。このような系の感光
性ポリイミド樹脂には、不純物イオンの問題はないもの
の、感度が数百〜数千 mJ/cm2 と実用に供するには低
いものであり、また、保存中の粘度変化や添加した該化
合物の析出等の欠点があった。[Chemical 3] (In the formula, R a represents a tetravalent organic group, R b represents a divalent organic group, and R c represents an ester group.) A carbon-carbon double bond dimerizable or polymerizable by actinic radiation, Also, a composition added with a compound containing an amino group or a quaternized salt thereof is shown. Although the photosensitive polyimide resin of such a system does not have a problem of impurity ions, it has a low sensitivity of several hundreds to several thousands mJ / cm 2 for practical use, and has a viscosity change during storage and There was a defect such as precipitation of the added compound.
【0008】さらに上記従来の感光性ポリイミド樹脂
は、いずれも、ポリイミド樹脂の前駆体であるポリアミ
ック酸に感光性を付与したものであり、最終的にポリア
ミック酸からポリイミド樹脂へ転化させるには 300℃以
上の高温で加熱処理をしなければならず、この熱に耐え
られる基板あるいは素子上でしか使用できないというこ
と、また得られたパターンの熱による体積収縮等、寸法
変化が大きいという欠点があった。Further, all of the above-mentioned conventional photosensitive polyimide resins are those obtained by imparting photosensitivity to a polyamic acid which is a precursor of a polyimide resin, and finally 300 ° C. to convert the polyamic acid into a polyimide resin. It had to be heat-treated at the above high temperature, and could only be used on a substrate or element that could withstand this heat, and there was the drawback that the resulting pattern had large dimensional changes such as volumetric shrinkage due to heat. .
【0009】[0009]
【発明が解決しようとする課題】本発明は、上記の欠点
を解消するためになされたもので、高感度で、解像度よ
く、光または放射線の照射によるレリーフパターンの形
成が可能で、また高熱による加熱処理を必要としない感
光性ポリイミド樹脂組成物を提供しようとするものであ
る。SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned drawbacks and has a high sensitivity, a high resolution, a relief pattern can be formed by irradiation of light or radiation, and high heat can be applied. It is intended to provide a photosensitive polyimide resin composition that does not require heat treatment.
【0010】[0010]
【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ね、ポリマーについて種々
の化学構造を検討した結果、後述の組成物が、上記の目
的を達成できることを見いだし、本発明を完成したもの
である。Means for Solving the Problems The inventors of the present invention have made extensive studies to achieve the above-mentioned object, and as a result of examining various chemical structures of polymers, it was found that the composition described below can achieve the above-mentioned object. They have found and completed the present invention.
【0011】即ち、本発明は、 (A)次の一般式で示される有機溶媒可溶性ポリイミド
樹脂、That is, the present invention provides (A) an organic solvent-soluble polyimide resin represented by the following general formula,
【0012】[0012]
【化4】 (但し、式中、R1 は 4価の酸成分残基を、R2 は 2価
のジアミン成分残基を、n は1 以上の整数をそれぞれ表
し、R1 およびR2 のうち少なくとも25モル%以上の残
基が芳香族環を含む) (B)光分解性プロトン発生剤および (C)多官能潜在性親電子剤 を必須成分としてなることを特徴とする感光性樹脂組成
物である。[Chemical 4] (However, in the formula, R 1 represents a tetravalent acid component residue, R 2 represents a divalent diamine component residue, n represents an integer of 1 or more, and at least 25 mol of R 1 and R 2 % Or more of the residues include an aromatic ring) (B) A photodegradable proton generator and (C) a polyfunctional latent electrophilic agent as essential components.
【0013】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【0014】本発明に用いる(A)有機溶媒可溶性ポリ
イミド樹脂は、酸成分とジアミン成分との重縮合反応に
よって得られるポリアミック酸をさらに脱水環化させた
もので、有機溶媒可溶なものである。ここで用いる酸成
分としては、具体的な化合物として、例えば、ピロメリ
ット酸、1,2,3,4-ベンゼンテトラカルボン酸、1,2,3,4-
シクロブタンテトラカルボン酸、1,2,4,5-シクロペンタ
ンテトラカルボン酸、1,2,4,5-シクロヘキサンテトラカ
ルボン酸、 3,3′,4,4′−ビシクロヘキシルテトラカル
ボン酸、2,3,5-トリカルボキシシクロペンチル酢酸、3,
4-ジカルボキシ-1,2,3,4- テトラヒドロナフタレン-1-
コハク酸、 3,3′,4,4′−ビフェニルテトラカルボン
酸、 2,3,3′,4′−ビフェニルテトラカルボン酸、 3,
3′,4,4′−ベンゾフェノンテトラカルボン酸、 2,3,
3′,4′−ベンゾフェノンテトラカルボン酸、 3,3′,4,
4′−ビフェニルエーテルテトラカルボン酸(4,4 ′-
オキシジフタル酸)、 2,3,3′,4′−ビフェニルエーテ
ルテトラカルボン酸、2,2-ビス(3,4-ジカルボキシフェ
ニル)プロパン、2,2-ビス(2,3-ジカルボキシフェニ
ル)プロパン、ビス(3,4-ジカルボキシフェニル)メタ
ン、ビス(2,3-ジカルボキシフェニル)メタン、1,1-ビ
ス(2,3-ジカルボキシフェニル)エタン、 2,2−ビス
(3,4-ジカルボキシフェニル)ヘキサフルオロプロパ
ン、 3,3′,4,4′−ジフェニルスルホンテトラカルボン
酸、 2,3,3′,4′−ジフェニルスルホンテトラカルボン
酸、2,3,6,7-ナフタレンテトラカルボン酸、1,4,5,8-ナ
フタレンテトラカルボン酸、1,2,5,6-ナフタレンテトラ
カルボン酸、 3,4,9,10-テトラカルボキシペリレン、2,
2-ビス[4-(3,4-ジカルボキシフェノキシ)フェニル]
プロパン、2,2-ビス[4-(3,4-ジカルボキシフェノキ
シ)フェニル]ヘキサフルオロプロパン等の無水物又は
その低級アルキルエステル等が挙げられ、これらは単独
又は混合して使用することかができる。The organic solvent-soluble polyimide resin (A) used in the present invention is a polyamic acid obtained by polycondensation reaction of an acid component and a diamine component, which is further dehydrated and cyclized, and is soluble in an organic solvent. . As the acid component used here, as specific compounds, for example, pyromellitic acid, 1,2,3,4-benzenetetracarboxylic acid, 1,2,3,4-
Cyclobutane tetracarboxylic acid, 1,2,4,5-cyclopentane tetracarboxylic acid, 1,2,4,5-cyclohexane tetracarboxylic acid, 3,3 ′, 4,4′-bicyclohexyl tetracarboxylic acid, 2, 3,5-tricarboxycyclopentyl acetic acid, 3,
4-dicarboxy-1,2,3,4-tetrahydronaphthalene-1-
Succinic acid, 3,3 ', 4,4'-biphenyltetracarboxylic acid, 2,3,3', 4'-biphenyltetracarboxylic acid, 3,
3 ', 4,4'-benzophenone tetracarboxylic acid, 2,3,
3 ', 4'-benzophenone tetracarboxylic acid, 3,3', 4,
4'-biphenyl ether tetracarboxylic acid (4,4'-
(Oxydiphthalic acid), 2,3,3 ', 4'-biphenyl ether tetracarboxylic acid, 2,2-bis (3,4-dicarboxyphenyl) propane, 2,2-bis (2,3-dicarboxyphenyl) Propane, bis (3,4-dicarboxyphenyl) methane, bis (2,3-dicarboxyphenyl) methane, 1,1-bis (2,3-dicarboxyphenyl) ethane, 2,2-bis (3, 4-dicarboxyphenyl) hexafluoropropane, 3,3 ', 4,4'-diphenylsulfone tetracarboxylic acid, 2,3,3', 4'-diphenylsulfone tetracarboxylic acid, 2,3,6,7- Naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 3,4,9,10-tetracarboxyperylene, 2,
2-bis [4- (3,4-dicarboxyphenoxy) phenyl]
Examples thereof include anhydrides such as propane and 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] hexafluoropropane, or lower alkyl esters thereof. These may be used alone or as a mixture. it can.
【0015】また、ジアミン成分としては、具体的な化
合物としては、例えば、 4,4′−ジアミノジフェニルメ
タン、 3,3′−ジメチル-4,4′−ジアミノジフェニルメ
タン、 3,3′,5,5′−テトラメチル-4,4′−ジアミノジ
フェニルメタン、 3,3′,5,5′−テトラエチル-4,4′−
ジアミノジフェニルメタン、 3,3′−ジメチル-5,5′−
ジエチル-4,4′−ジアミノジフェニルメタン、 4,4′−
メチレンビス(シクロヘキシルアミン)、 3,3′−ジメ
チル-4,4′−ジアミノジシクロヘキシルメタン、 3,3′
−ジメトキシ-4,4′−ジアミノジフェニルメタン、 3,
3′−ジエトキシ-4,4′−ジアミノジフェニルメタン、
ビス(3-アミノフェニル)エーテル、ビス(4-アミノフ
ェニル)エーテル、 3,4′−ジアミノジフェニルエーテ
ル、 3,3′−ジエチル-4,4′−ジアミノジフェニルエー
テル、 3,3′−ジメトキシ-4,4′−ジアミノジフェニル
エーテル、ビス[4-(4-アミノフェノキシ)フェニル]
エーテル、 3,3′−ジメチル-4,4′−ジアミノジフェニ
ルスルホン、 3,3′−ジエチル-4,4′−ジアミノジフェ
ニルスルホン、 3,3′−ジメトキシ-4,4′−ジアミノジ
フェニルスルホン、 3,3′−ジエトキシ-4,4′−ジアミ
ノジフェニルスルホン、 3,3′−ジメチル-4,4′−ジア
ミノジフェニルプロパン、 3,3′−ジエチル-4,4′−ジ
アミノジフェニルプロパン、 3,3′−ジメトキシ-4,4′
−ジアミノジフェニルプロパン、 3,3′−ジエトキシ-
4,4′−ジアミノジフェニルプロパン、2,2-ビス[4-(4
-アミノフェノキシ)フェニル]プロパン、1,3-ビス(4
-アミノフェニル)プロパン、2,2-ビス(4-アミノフェ
ニル)プロパン、 4,4′−ジアミノジフェニルスルフィ
ド、 3,3′−ジメチル-4,4′−ジアミノジフェニルスル
フィド、 3,3′−ジエチル-4,4′−ジアミノジフェニル
スルフィド、 3,3′−ジメトキシ-4,4′−ジアミノジフ
ェニルスルフィド、 3,3′−ジエトキシ-4,4′−ジアミ
ノジフェニルスルフィド、 2,2′−ジアミノジエチルス
ルフィド、 2,4′−ジアミノジフェニルスルフィド、m-
フェニレンジアミン、p-フェニレンジアミン、1,3-ビス
(4-アミノフェノキシ)ベンゼン、1,2-ビス(4-アミノ
フェニル)エタン、1,1-ビス(4-アミノフェニル)エタ
ン、ビス(3-アミノフェニル)スルホン、ビス(4-アミ
ノフェニル)スルホン、o-トルイジンスルホン、ビス
[4-(4-アミノフェノキシ)フェニル]スルホン、ビス
[4-(3-アミノフェノキシ)フェニル]スルホン、 4,
4′−ジアミノジベンジルスルホキシド、ビス(4-アミ
ノフェニル)ジエチルシラン、ビス(4-アミノフェニ
ル)ジフェニルシラン、ビス(4-アミノフェニル)エチ
ルホスフィンオキシド、ビス(4-アミノフェニル)フェ
ニルホスフィンオキシド、ビス(4-アミノフェニル)−
N−フェニルアミン、ビス(4-アミノフェニル)−N−
メチルアミン、1,2-ジアミノナフタレン、1,4-ジアミノ
ナフタレン、1,5-ジアミノナフタレン、1,6-ジアミノナ
フタレン、1,7-ジアミノナフタレン、1,8-ジアミノナフ
タレン、2,3-ジアミノナフタレン、2,6-ジアミノナフタ
レン、1,4-ジアミノ-2−メチルナフタレン、1,5-ジアミ
ノ-2−メチルナフタレン、1,3-ジアミノ-2−フェニルナ
フタレン、9,9-ビス(4-アミノフェニル)フルオレン、
4,4′−ジアミノビフェニル、 3,3′−ジアミノビフェ
ニル、3,3′−ジヒドロキシ-4,4′−ジアミノビフェニ
ル、 3,3′−ジクロロ-4,4′−ジアミノビフェニル、
3,3′−ジメチル-4,4′−ジアミノビフェニル、 3,4′
−ジメチル-4,4′−ジアミノビフェニル、 3,3′−ジメ
トキシ-4,4′−ジアミノビフェニル、 4,4′−ビス(4-
アミノフェノキシ)ビフェニル、2,4-ジアミノトルエ
ン、2,5-ジアミノトルエン、2,6-ジアミノトルエン、3,
5-ジアミノトルエン、1,3-ジアミノ−2,5-ジクロロベン
ゼン、1,4-ジアミノ−2,5-ジクロロベンゼン、1-メトキ
シ−2,4-ジアミノベンゼン、1,3-ジアミノ−4,6-ジメチ
ルベンゼン、1,4-ジアミノ-2,5- ジメチルベンゼン、1,
4-ジアミノ-2−メトキシ-5−メチルベンゼン、1,4-ジア
ミノ−2,3,5,6-テトラメチルベンゼン、1,4-ビス(2-メ
トキシ-4−アミノペンチル)ベンゼン、1,4-ビス(1,1-
ジメチル-5−アミノペンチル)ベンゼン、1,4-ビス(4-
アミノフェノキシ)ベンゼン、3,5-ジアミノ安息香酸、
2,5-ジアミノ安息香酸、o-キシレンジアミン、m-キシレ
ンジアミン、p-キシレンジアミン、 9,10-ビス(4-アミ
ノフェニル)アントラセン、 3,3′−ジアミノベンゾフ
ェノン、 4,4′−ジアミノベンゾフェノン、2,6-ジアミ
ノピリジン、3,5-ジアミノピリジン、1,3-ジアミノアダ
マンタン、 3,3′−ジアミノ-1,1,1′−ジアダマンタ
ン、N−(3-アミノフェニル)-4−アミノベンズアミ
ド、 4,4′−ジアミノベンズアニリド、4-アミノフェニ
ル-3−アミノベンゾエート、2,2-ビス(4-アミノフェニ
ル)ヘキサフルオロプロパン、2,2-ビス(3-アミノフェ
ニル)ヘキサフルオロプロパン、2-(3-アミノフェニ
ル)−2-(4-アミノフェニル)ヘキサフルオロプロパ
ン、2,2-ビス[4-(4-アミノフェノキシ)フェニル]ヘ
キサフルオロプロパン、2,2-ビス[4-(2-クロロ-4−ア
ミノフェノキシ)フェニル]ヘキサフルオロプロパン、
1,1-ビス(4-アミノフェニル)-1−フェニル-2,2,2−ト
リフルオロエタン、1,1-ビス[4-(4-アミノフェノキ
シ)フェニル]−1-フェニル-2,2,2−トリフルオロエタ
ン、1,3-ビス(3-アミノフェニル)ヘキサフルオロプロ
パン、1,3-ビス(3-アミノフェニル)デカフルオロプロ
パン、2,2-ビス(3-アミノ-4- ヒドロキシフェニル)ヘ
キサフルオロプロパン、2,2-ビス(3-アミノ-4- メチル
フェニル)ヘキサフルオロプロパン、2,2-ビス(5-アミ
ノ-4- メチルフェニル)ヘキサフルオロプロパン、1,4-
ビス(3-アミノフェニル)ブタ−1-エン-3−イン等が挙
げられ、これらは単独又は 2種以上混合して使用するこ
とができる。Specific examples of the diamine component include, for example, 4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5,5. ′ -Tetramethyl-4,4′-diaminodiphenylmethane, 3,3 ′, 5,5′-tetraethyl-4,4′-
Diaminodiphenylmethane, 3,3'-dimethyl-5,5'-
Diethyl-4,4'-diaminodiphenylmethane, 4,4'-
Methylenebis (cyclohexylamine), 3,3'-dimethyl-4,4'-diaminodicyclohexylmethane, 3,3 '
-Dimethoxy-4,4'-diaminodiphenylmethane, 3,
3'-diethoxy-4,4'-diaminodiphenylmethane,
Bis (3-aminophenyl) ether, bis (4-aminophenyl) ether, 3,4'-diaminodiphenyl ether, 3,3'-diethyl-4,4'-diaminodiphenyl ether, 3,3'-dimethoxy-4, 4'-diaminodiphenyl ether, bis [4- (4-aminophenoxy) phenyl]
Ether, 3,3'-dimethyl-4,4'-diaminodiphenyl sulfone, 3,3'-diethyl-4,4'-diaminodiphenyl sulfone, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfone, 3,3'-diethoxy-4,4'-diaminodiphenyl sulfone, 3,3'-dimethyl-4,4'-diaminodiphenylpropane, 3,3'-diethyl-4,4'-diaminodiphenylpropane, 3, 3'-dimethoxy-4,4 '
-Diaminodiphenylpropane, 3,3'-diethoxy-
4,4'-diaminodiphenylpropane, 2,2-bis [4- (4
-Aminophenoxy) phenyl] propane, 1,3-bis (4
-Aminophenyl) propane, 2,2-bis (4-aminophenyl) propane, 4,4'-diaminodiphenyl sulfide, 3,3'-dimethyl-4,4'-diaminodiphenyl sulfide, 3,3'-diethyl -4,4'-diaminodiphenyl sulfide, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfide, 3,3'-diethoxy-4,4'-diaminodiphenyl sulfide, 2,2'-diaminodiethyl sulfide , 2,4'-diaminodiphenyl sulfide, m-
Phenylenediamine, p-phenylenediamine, 1,3-bis (4-aminophenoxy) benzene, 1,2-bis (4-aminophenyl) ethane, 1,1-bis (4-aminophenyl) ethane, bis (3 -Aminophenyl) sulfone, bis (4-aminophenyl) sulfone, o-toluidine sulfone, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, 4,
4'-diaminodibenzyl sulfoxide, bis (4-aminophenyl) diethylsilane, bis (4-aminophenyl) diphenylsilane, bis (4-aminophenyl) ethylphosphine oxide, bis (4-aminophenyl) phenylphosphine oxide, Bis (4-aminophenyl)-
N-phenylamine, bis (4-aminophenyl) -N-
Methylamine, 1,2-diaminonaphthalene, 1,4-diaminonaphthalene, 1,5-diaminonaphthalene, 1,6-diaminonaphthalene, 1,7-diaminonaphthalene, 1,8-diaminonaphthalene, 2,3-diamino Naphthalene, 2,6-diaminonaphthalene, 1,4-diamino-2-methylnaphthalene, 1,5-diamino-2-methylnaphthalene, 1,3-diamino-2-phenylnaphthalene, 9,9-bis (4- Aminophenyl) fluorene,
4,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl,
3,3'-Dimethyl-4,4'-diaminobiphenyl, 3,4 '
-Dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 4,4'-bis (4-
Aminophenoxy) biphenyl, 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene, 3,
5-diaminotoluene, 1,3-diamino-2,5-dichlorobenzene, 1,4-diamino-2,5-dichlorobenzene, 1-methoxy-2,4-diaminobenzene, 1,3-diamino-4, 6-dimethylbenzene, 1,4-diamino-2,5-dimethylbenzene, 1,
4-diamino-2-methoxy-5-methylbenzene, 1,4-diamino-2,3,5,6-tetramethylbenzene, 1,4-bis (2-methoxy-4-aminopentyl) benzene, 1, 4-bis (1,1-
Dimethyl-5-aminopentyl) benzene, 1,4-bis (4-
Aminophenoxy) benzene, 3,5-diaminobenzoic acid,
2,5-diaminobenzoic acid, o-xylenediamine, m-xylenediamine, p-xylenediamine, 9,10-bis (4-aminophenyl) anthracene, 3,3′-diaminobenzophenone, 4,4′-diamino Benzophenone, 2,6-diaminopyridine, 3,5-diaminopyridine, 1,3-diaminoadamantane, 3,3′-diamino-1,1,1′-diadamantane, N- (3-aminophenyl) -4 -Aminobenzamide, 4,4'-diaminobenzanilide, 4-aminophenyl-3-aminobenzoate, 2,2-bis (4-aminophenyl) hexafluoropropane, 2,2-bis (3-aminophenyl) hexa Fluoropropane, 2- (3-aminophenyl) -2- (4-aminophenyl) hexafluoropropane, 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis [ 4- (2-chloro-4-aminophenyl Phenoxy) phenyl] hexafluoropropane,
1,1-bis (4-aminophenyl) -1-phenyl-2,2,2-trifluoroethane, 1,1-bis [4- (4-aminophenoxy) phenyl] -1-phenyl-2,2 , 2-Trifluoroethane, 1,3-bis (3-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenyl) decafluoropropane, 2,2-bis (3-amino-4-hydroxy) Phenyl) hexafluoropropane, 2,2-bis (3-amino-4-methylphenyl) hexafluoropropane, 2,2-bis (5-amino-4-methylphenyl) hexafluoropropane, 1,4-
Examples thereof include bis (3-aminophenyl) but-1-en-3-yne, which may be used alone or in combination of two or more.
【0016】本発明に用いる有機溶媒可溶性ポリイミド
樹脂は、前述した酸成分と前述したジアミン成分とを反
応させて得られるが、それら酸成分およびジアミン成分
のうち少なくとも一方の成分の25モル%以上の芳香族環
を含む成分を使用する。この成分が25モル%未満である
と、多官能潜在性親電子剤の反応ポイントが減少し、感
度が劣り好ましくない。ポリイミド樹脂の前駆体である
ポリアミック酸は、 0.5g /N−メチル-2−ピロリドン
100 mlの濃度溶液として、30℃における対数粘度が 0.2
〜 4.0の範囲であり、より好ましくは 0.3〜 2.0の範囲
である。ポリアミック酸は、酸成分とジアミン成分とを
有機溶媒中で30℃以下、好ましくは20℃以下の反応温度
下に 3〜12時間付加重合反応させて得られる。この重合
反応における有機溶媒として、例えばN,N−ジメチル
スルホキシド、N,N−ジメチルホルムアミド、N,N
−ジエチルホルムアミド、N,N−ジメチルアセトアミ
ド、N,N−ジエチルアセトアミド、N−メチル-2−ピ
ロリドン、ヘキサメチレンホスホアミド等が挙げられ、
これらは単独又は 2種以上混合して使用することができ
る。上記のようにして得られたポリアミック酸は、次い
で脱水環化され、ポリイミド樹脂とする。脱水環化する
方法は公知の方法を用いることができ、例えば、無水酢
酸とピリジンによる化学環化法、或いはトルエン、キシ
レン等の還流による熱環化法等を使用することができ
る。このポリイミド樹脂溶液は、脱水する際用いた無水
酢酸、ピリジン、或いはトルエン、キシレン等を含んで
いるため、水、メタノール等の貧溶剤へポリイミド樹脂
溶液を投入、再沈殿し、さらにこれを乾燥しポリイミド
樹脂の粉末とする。これを所望の有機溶媒へ溶解させ、
本発明に使用する有機溶媒可溶性ポリイミド樹脂の溶液
とする。ここで使用する有機溶媒としては、前述したポ
リアミック酸の合成に用いた溶媒の他、使用するポリイ
ミド樹脂が溶解するものであれば汎用の有機溶媒を単独
または混合して使用することができる。これらの溶媒を
用いた有機溶媒可溶性ポリイミド樹脂の有機溶媒溶液の
濃度は、本発明の使用目的、使用方法によって適宜決定
すればよいので、特に限定されるものではないが、通常
1〜30%の間で使用される。The organic solvent-soluble polyimide resin used in the present invention can be obtained by reacting the above-mentioned acid component with the above-mentioned diamine component, and is used in an amount of 25 mol% or more of at least one of the acid component and the diamine component. A component containing an aromatic ring is used. When the content of this component is less than 25 mol%, the reaction point of the polyfunctional latent electrophilic agent decreases, and the sensitivity is poor, which is not preferable. Polyamic acid which is a precursor of polyimide resin is 0.5 g / N-methyl-2-pyrrolidone.
As a 100 ml concentrated solution, the logarithmic viscosity at 30 ° C is
To 4.0, and more preferably 0.3 to 2.0. The polyamic acid is obtained by subjecting an acid component and a diamine component to an addition polymerization reaction in an organic solvent at a reaction temperature of 30 ° C. or lower, preferably 20 ° C. or lower for 3 to 12 hours. As the organic solvent in this polymerization reaction, for example, N, N-dimethylsulfoxide, N, N-dimethylformamide, N, N
-Diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylenephosphoamide and the like,
These may be used alone or in combination of two or more. The polyamic acid obtained as described above is then dehydrated and cyclized to obtain a polyimide resin. A known method can be used for the dehydration cyclization, and for example, a chemical cyclization method using acetic anhydride and pyridine, a thermal cyclization method by refluxing toluene, xylene, or the like can be used. This polyimide resin solution contains acetic anhydride used for dehydration, pyridine, or toluene, xylene, etc., so the polyimide resin solution is poured into a poor solvent such as water or methanol, reprecipitated, and further dried. Polyimide resin powder is used. Dissolve this in the desired organic solvent,
A solution of an organic solvent-soluble polyimide resin used in the present invention. As the organic solvent used here, in addition to the solvent used for the synthesis of the polyamic acid described above, a general-purpose organic solvent can be used alone or in combination as long as it can dissolve the polyimide resin used. The concentration of the organic solvent solution of the organic solvent-soluble polyimide resin using these solvents is not particularly limited because it may be appropriately determined according to the purpose of use of the present invention, the method of use.
Used between 1 and 30%.
【0017】本発明に用いる(B)光分解性プロトン発
生剤としては、アリルジアゾニウム塩(Ar N
2 + X- )、ジアリルヨードニウム塩(Ar 2 I
+ X- )、トリアリルスルフォニウム塩(Ar 3 S+ X
- )、芳香族スルフォン酸エステル等が挙げられ、これ
らは単独又は 2種以上混合して使用することができる。
光分解性プロトン発生剤の配合割合は、前述したポリア
ミック酸溶液の固形分に対して 1〜50重量%配合させる
ことが望ましい。好ましくは 5〜20重量%の範囲内であ
る。配合量が 1重量%未満では、酸の発生速度が遅くな
り十分な感度が得られず、また、50重量%を超えると樹
脂組成物の保存安定性が悪く好ましくない。The photodegradable proton-generating agent (B) used in the present invention is an allyldiazonium salt (Ar N
2 + X − ), diallyl iodonium salt (Ar 2 I
+ X − ), triallyl sulfonium salt (Ar 3 S + X
- ), Aromatic sulfonic acid ester, etc., and these can be used alone or in combination of two or more kinds.
It is desirable that the photodecomposable proton generating agent is mixed in an amount of 1 to 50% by weight based on the solid content of the polyamic acid solution. It is preferably in the range of 5 to 20% by weight. If the content is less than 1% by weight, the acid generation rate will be slow and sufficient sensitivity cannot be obtained, and if it exceeds 50% by weight, the storage stability of the resin composition will be poor, such being undesirable.
【0018】本発明に用いる(C)多官能潜在性親電子
剤としては、前述した光分解性プロトン発生剤から発生
した酸によりカルボカチオン等の親電子置換反応を起こ
し得る官能基が、 1分子中に 2つ以上生成するようなも
のであればよく特に限定されるものではないが、好まし
くはカルボカチオンが生成する際にブロックしている酸
が遊離するものが好ましい。具体的な化合物として、例
えば、1,4-ビス(アセトキシメチル)ベンゼン、1,3,5-
トリ(アセトキシメチル)ベンゼン、3,4-ビス(アセト
キシメチル)フラン、1,4-ビス(スルフォキシメチル)
ベンゼン、1,3,5-トリ(スルフォキシメチル)ベンゼ
ン、3,4-ビス(スルフォキシメチル)フラン等が挙げら
れ、これらは単独又は 2種以上混合して使用することが
できる。多官能潜在性親電子剤の配合割合は、前述した
ポリアミック酸溶液の固形分に対して 1〜50重量%配合
させることが望ましい。好ましくは 5〜20重量%の範囲
内である。配合量が 1重量%未満では、分子間の架橋密
度が少なくなり、十分な感度、解像度が得られず、また
50重量%を超えると樹脂組成物の保存安定性、ポリイミ
ド膜の物性に劣り好ましくない。As the polyfunctional latent electrophilic agent (C) used in the present invention, one molecule is a functional group capable of causing an electrophilic substitution reaction such as carbocation with an acid generated from the above-mentioned photodegradable proton generating agent. There is no particular limitation as long as it produces two or more of them, but it is preferable that the blocking acid is liberated when the carbocation is produced. Specific compounds include, for example, 1,4-bis (acetoxymethyl) benzene, 1,3,5-
Tri (acetoxymethyl) benzene, 3,4-bis (acetoxymethyl) furan, 1,4-bis (sulfoxymethyl)
Examples thereof include benzene, 1,3,5-tri (sulfoxymethyl) benzene and 3,4-bis (sulfoxymethyl) furan, which may be used alone or in combination of two or more. The proportion of the polyfunctional latent electrophilic agent is preferably 1 to 50% by weight based on the solid content of the polyamic acid solution described above. It is preferably in the range of 5 to 20% by weight. If the blending amount is less than 1% by weight, the cross-linking density between molecules becomes small, and sufficient sensitivity and resolution cannot be obtained.
If it exceeds 50% by weight, the storage stability of the resin composition and the physical properties of the polyimide film are deteriorated, which is not preferable.
【0019】本発明の感光性樹脂組成物は、上述した有
機溶媒可溶性ポリイミド樹脂溶液、光分解性プロトン発
生剤および多官能潜在性親電子剤を配合して容易に製造
することができる。また、上述の各成分を必須成分とす
るが、本発明の目的に反しない範囲において他の添加物
を配合することができる。こうして得られた感光性樹脂
組成物は、プリント回路基板の絶縁材料やIC、LSI
の層間絶縁膜や表面保護膜、液晶の配向膜等に好適な材
料である。The photosensitive resin composition of the present invention can be easily produced by blending the above-mentioned organic solvent-soluble polyimide resin solution, photodegradable proton generator and polyfunctional latent electrophilic agent. Further, although each of the above-mentioned components is an essential component, other additives can be blended within a range not deviating from the object of the present invention. The photosensitive resin composition thus obtained is used as an insulating material for printed circuit boards, ICs, and LSIs.
It is a suitable material for the interlayer insulating film, the surface protective film, the liquid crystal alignment film, and the like.
【0020】次に本発明の感光性樹脂組成物を用いて、
レリーフパターンを形成する例を説明する。まず、有機
溶媒可溶性ポリイミド樹脂溶液、光分解性プロトン発生
剤、多官能潜在性親電子剤を配合して感光性樹脂組成物
を調製する。この組成物を、基板上にスピンコート、印
刷等の常法により塗布乾燥させて有機溶媒を除去する。
次に得られた塗膜にネガ型のフォトマスクを通して、低
圧水銀灯、中圧水銀灯、高圧水銀灯、超高圧水銀灯、キ
セノンランプ等で露光する。露光後、未露光部を除去す
るため現像液をスプレーするか、現像液に基板を浸漬す
るなどして現像を行う。この現像液は、塗膜中の未露光
部を適当な時間内で溶解除去することができる有機溶媒
がよく、例えば、N,N−ジメチルスルフォキシド、
N,N−ジメチルホルムアミド、N,N−ジエチルホル
ムアミド、N,N−ジメチルアセトアミド、N,N−ジ
エチルアセトアミド、N−メチル−2-ピロリドン、ヘキ
サメチレンホスホアミド等を単独または混合して、さら
にこれら良溶媒に対して、メタノール、エタノール、イ
ソプロパノール、エチルセロソルブ、ブチルセロソル
ブ、エチルカルビトール、ブチルカルビトール、酢酸イ
ソアミルエステル等の貧溶媒を混合し、溶解度を調整し
て使用することができる。現像後、適当なリンス液によ
って該基板上を洗浄することによってレリーフパターン
を形成することができる。ここで用いるリンス液として
は、メタノール、エタノール、イソプロパノール、エチ
ルセロソルブ、ブチルセロソルブ、エチルカルビトー
ル、ブチルカルビトール、酢酸イソアミルエステル等を
単独または混合して使用することができる。レリーフパ
ターンの得られた基板は、50〜250 ℃、好ましくは 150
〜200℃の下で60〜90分間加熱処理して、ポリイミド樹
脂中の有機溶媒を乾燥させる。こうして、耐熱性、絶縁
性等を有するレリーフパターンを得ることができる。Next, using the photosensitive resin composition of the present invention,
An example of forming a relief pattern will be described. First, an organic solvent-soluble polyimide resin solution, a photodegradable proton generator, and a polyfunctional latent electrophilic agent are blended to prepare a photosensitive resin composition. This composition is applied onto a substrate by a conventional method such as spin coating or printing and dried to remove the organic solvent.
Next, the obtained coating film is exposed to a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a xenon lamp, etc. through a negative type photomask. After exposure, development is performed by spraying a developing solution to remove the unexposed portion or immersing the substrate in the developing solution. This developing solution is preferably an organic solvent capable of dissolving and removing the unexposed area in the coating film within an appropriate time, and for example, N, N-dimethylsulfoxide,
N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylenephosphoamide, etc., alone or mixed, and further these A poor solvent such as methanol, ethanol, isopropanol, ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, and acetic acid isoamyl ester can be mixed with a good solvent to adjust the solubility before use. After development, a relief pattern can be formed by washing the substrate with an appropriate rinse solution. As the rinse liquid used here, methanol, ethanol, isopropanol, ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, acetic acid isoamyl ester or the like can be used alone or in combination. The substrate on which the relief pattern is obtained is 50 to 250 ° C., preferably 150 ° C.
It heat-processes at -200 degreeC for 60-90 minutes, and the organic solvent in a polyimide resin is dried. In this way, a relief pattern having heat resistance, insulation, etc. can be obtained.
【0021】[0021]
【作用】本発明の感光性樹脂組成物は、ポリイミド樹脂
主鎖中のベンゼン環に対して、カルボカチオンを 1分子
中に 2つ以上発生できる架橋剤を親電子置換反応させ
て、ポリイミド樹脂分子どうしを架橋させることによ
り、現像液に対して露光部と未露光部の溶解度差を出現
させることによって、高感度、高解像度のレリーフパタ
ーンを形成させることが可能となったものである。さら
に、ポリアミック酸の状態でレリーフパターンを得、そ
の後熱転化してポリイミド膜とすることができるので、
高密度のパターンが得られる利点がある。[Function] The photosensitive resin composition of the present invention is obtained by subjecting a benzene ring in a polyimide resin main chain to an electrophilic substitution reaction with a cross-linking agent capable of generating two or more carbocations in one molecule, to obtain a polyimide resin molecule. By cross-linking each other, a difference in solubility between the exposed portion and the unexposed portion with respect to the developing solution appears, whereby a relief pattern having high sensitivity and high resolution can be formed. Furthermore, since a relief pattern can be obtained in the state of polyamic acid, and then heat conversion can be performed to form a polyimide film,
There is an advantage that a high-density pattern can be obtained.
【0022】[0022]
【実施例】次に本発明を実施例によって説明するが、本
発明はこれらの実施例によって限定されるものではな
い。EXAMPLES Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples.
【0023】実施例1 攪拌機、冷却器および窒素導入管を設けたフラスコに乾
燥窒素を通してフラスコ内を置換した後、 3,3′,5,5′
−テトラメチル-4,4′−ジアミノジフェニルメタン25.6
4gと、N−メチル−2-ピロリドン 231.4g を加えて溶解
した。この溶液に 3,3′,4,4′−ベンゾフェノンテトラ
カルボン酸二無水物32.22gを粉体のまま、発熱に注意し
ながら数回に分割して加えた。反応による発熱を氷浴中
で抑えながら攪拌を続けそのまま 8時間攪拌してポリア
ミック酸溶液を調製した。このポリアミック酸溶液の一
部を水とメタノール混合溶媒中に投入、再沈殿させてポ
リアミック酸の粉末を得た。この粉末をN−メチル−2-
ピロリドン 0.5g /100 ml濃度となるように溶解し、30
℃の対数粘度を測定したところ 1.18dl /g であった。
このポリアミック酸溶液に無水酢酸20.58gとピリジン1
5.82gを投入し10時間攪拌してイミド化を行った。この
反応溶液を大量の水とメタノールの混合溶液に投入して
ポリイミド樹脂を再沈殿し、さらにこれを12時間真空乾
燥しポリイミド樹脂粉末を得た。この樹脂粉末を固形分
10%となるようにシクロヘキサノンに溶解し、ポリイミ
ド樹脂溶液を得た。Example 1 Dry nitrogen was passed through a flask equipped with a stirrer, a condenser and a nitrogen inlet tube to replace the inside of the flask, and then 3,3 ', 5,5'
-Tetramethyl-4,4'-diaminodiphenylmethane 25.6
4 g and 231.4 g of N-methyl-2-pyrrolidone were added and dissolved. To this solution, 32.22 g of 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride was added as a powder in several divided portions while paying attention to heat generation. While suppressing the heat generated by the reaction in an ice bath, stirring was continued for 8 hours to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solvent of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder is N-methyl-2-
Dissolve pyrrolidone to a concentration of 0.5 g / 100 ml,
The logarithmic viscosity at ℃ was 1.18dl / g.
20.58 g of acetic anhydride and 1 of pyridine were added to this polyamic acid solution.
5.82 g was added and the mixture was stirred for 10 hours for imidization. The reaction solution was poured into a large amount of a mixed solution of water and methanol to reprecipitate the polyimide resin, which was further vacuum dried for 12 hours to obtain a polyimide resin powder. Solid content of this resin powder
It was dissolved in cyclohexanone to 10% to obtain a polyimide resin solution.
【0024】このポリイミド樹脂溶液100gにトリフェニ
ルスルフォニウムトリフルオロメタンスルフォン酸塩
1.0g と1,4-ビス(アセトキシメチル)ベンゼン 1.5g
を溶解させ、 1.0μm フィルターにて加圧濾過を行い感
光性樹脂組成物を製造した。100 g of this polyimide resin solution was mixed with triphenylsulfonium trifluoromethanesulfonate.
1.0g and 1,4-bis (acetoxymethyl) benzene 1.5g
Was dissolved and pressure-filtered with a 1.0 μm filter to produce a photosensitive resin composition.
【0025】この組成物をスピンナーでシリコンウエハ
ー上に回転塗布し、ついで80℃の熱板上で 5分間乾燥さ
せて膜厚 3μm の塗膜を得た。この塗膜上にレリーフパ
ターンのマスクを密着させ、超高圧水銀灯を用いて紫外
線を露光した。このときの露光量は8mJ/cm2 であっ
た。露光後、シクロヘキサノンとイソプロパノールとの
混合溶媒で現像しレリーフパターンを得た。この現像は
パターン幅 4μm の線を解像していた。このパターンを
200℃で 1時間加熱処理して残留の有機溶媒を乾燥さ
せ、耐熱性のレリーフパターンを得た。このパターン
は、さらに200 ℃で 1時間の加熱処理を行ってもパター
ンのぼやけや、加熱減量は起こらなかった。This composition was spin-coated on a silicon wafer with a spinner and then dried on a hot plate at 80 ° C. for 5 minutes to obtain a coating film having a thickness of 3 μm. A mask having a relief pattern was brought into close contact with this coating film and exposed to ultraviolet rays using an ultrahigh pressure mercury lamp. The exposure dose at this time was 8 mJ / cm 2 . After exposure, it was developed with a mixed solvent of cyclohexanone and isopropanol to obtain a relief pattern. This development resolved lines with a pattern width of 4 μm. This pattern
The residual organic solvent was dried by heating at 200 ° C for 1 hour to obtain a heat-resistant relief pattern. In this pattern, even if heat treatment was further performed at 200 ° C. for 1 hour, the pattern was not blurred and the heating loss was not caused.
【0026】実施例2 攪拌機、冷却器および窒素導入管を設けたフラスコに乾
燥窒素を通してフラスコ内を置換した後、 2,2−ビス
[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロ
プロパン25.92gと 2,2−ビス(3-アミノ−4-ヒドロキシ
フェニル)ヘキサフルオロプロパン18.31gとN−メチル
−2-ピロリドン 264.16gを加えて溶解した。この溶液に
ピロメリット酸二無水物21.81gを粉体のまま、発熱に注
意しながら数回に分割して加えた。反応による発熱を氷
浴中で抑えながら攪拌を続けそのまま10時間攪拌してポ
リアミック酸溶液を調製した。このポリアミック酸溶液
の一部を水とメタノール混合溶媒中に投入、再沈殿させ
てポリアミック酸の粉末を得た。この粉末をN−メチル
−2-ピロリドン 0.5g /100 ml濃度となるように溶解
し、30℃の対数粘度を測定したところ 0.84dl /g であ
った。このポリアミック酸溶液に無水酢酸20.58g、ピリ
ジン15.82gを投入し12時間攪拌してイミド化を行った。
この反応溶液を大量の水とメタノールの混合溶液中に投
入し、ポリイミド樹脂を再沈殿し、さらにこれを12時間
真空乾燥しポリイミド樹脂粉末を得た。この樹脂粉末を
固形分10%になるようにγ−ブチルラクトンに溶解し、
ポリイミド樹脂溶液を得た。Example 2 Dry nitrogen was passed through a flask equipped with a stirrer, a condenser and a nitrogen introducing tube to replace the inside of the flask, and then 25.92 g of 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane And 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane 18.31 g and N-methyl-2-pyrrolidone 264.16 g were added and dissolved. To this solution, 21.81 g of pyromellitic dianhydride was added as a powder in several divided portions while paying attention to heat generation. While suppressing the heat generated by the reaction in an ice bath, stirring was continued for 10 hours to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solvent of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder was dissolved in N-methyl-2-pyrrolidone at a concentration of 0.5 g / 100 ml and the logarithmic viscosity at 30 ° C. was measured to be 0.84 dl / g. 20.58 g of acetic anhydride and 15.82 g of pyridine were added to this polyamic acid solution, and the mixture was stirred for 12 hours for imidization.
The reaction solution was poured into a large amount of a mixed solution of water and methanol to reprecipitate the polyimide resin, which was further vacuum dried for 12 hours to obtain a polyimide resin powder. Dissolve this resin powder in γ-butyl lactone so that the solid content becomes 10%,
A polyimide resin solution was obtained.
【0027】このポリイミド樹脂溶液100gにジフェニル
ヨードニウムトリフルオロメタンスルフォン酸塩 1.5g
と1,4-ビス(アセトキシメチル)ベンゼン 1.2g を溶解
させ、 1.0μm フィルターにて加圧濾過を行い感光性樹
脂組成物を製造した。To 100 g of this polyimide resin solution, 1.5 g of diphenyliodonium trifluoromethanesulfonate
And 1,4-bis (acetoxymethyl) benzene (1.2 g) were dissolved and pressure-filtered with a 1.0 μm filter to produce a photosensitive resin composition.
【0028】この組成物をスピンナーでシリコンウエハ
ー上に回転塗布し、ついで80℃の熱板上で 5分間乾燥さ
せ膜厚 3μm の塗膜を得た。この塗膜上にレリーフパタ
ーンのマスクを密着させ、超高圧水銀灯を用いて紫外線
を露光した。このときの露光量は5mJ/cm2 であった。
露光後、γ−ブチルラクトンと酢酸イソアミルエステル
との混合溶媒で現像しレリーフパターンを得た。この現
像は幅 3.5μm の線を解像していた。このパターンを 2
00℃で 1時間加熱処理して残留の有機溶媒を乾燥させ、
耐熱性のリレーフパターンを得た。このパターンはさら
に 200℃で 1時間の加熱処理を行ってもパターンのぼや
けや加熱減量が起きなかった。This composition was spin coated on a silicon wafer with a spinner and then dried on a hot plate at 80 ° C. for 5 minutes to obtain a coating film having a thickness of 3 μm. A mask having a relief pattern was brought into close contact with this coating film and exposed to ultraviolet rays using an ultrahigh pressure mercury lamp. The exposure dose at this time was 5 mJ / cm 2 .
After exposure, it was developed with a mixed solvent of γ-butyl lactone and acetic acid isoamyl ester to obtain a relief pattern. This development resolved a line with a width of 3.5 μm. This pattern 2
Heat treatment at 00 ℃ for 1 hour to dry the residual organic solvent,
A heat resistant relay pattern was obtained. When this pattern was further heat-treated at 200 ° C for 1 hour, there was no blurring of the pattern or heating loss.
【0029】実施例3 攪拌機、冷却器、Dean −Stark分離器および窒素導入
管を設けたフラスコに乾燥窒素を通してフラスコ内を置
換した後、 4,4′−ジアミノジフェニルエーテル10.01g
と、 2,2′−ビス(3-アミノ-4−ヒドロキシフェニル)
ヘキサフルオロプロパン18.31gとN−メチル-2−ピロリ
ドン 237.4g を加えて溶解した。この溶液に 4,4′−オ
キシジフタル酸二無水物31.02gを粉体のまま、発熱に注
意しながら数回に分割して加えた。反応による発熱を氷
浴中で抑えながら攪拌を続けそのまま12時間攪拌してポ
リアミック酸溶液を調製した。このポリアミック酸溶液
の一部を水とメタノール混合溶液中に投入、再沈殿させ
てポリアミック酸の粉末を得た。この粉末をN−メチル
−2-ピロリドン 0.5g /100 ml濃度となるように溶解
し、30℃の対数粘度を測定したところ 0.82dl /g であ
った。このポリアミック酸溶液にトルエン40.0 gを投入
し 200℃ 3時間還流してイミド化を行った。イミド化に
伴い発生する水は、Dean −Stark水分離器により連続
的に系外に取り出した。この反応溶液を大量の水とメタ
ノール混合溶液中に投入しポリイミド樹脂を再沈殿し、
さらにこれを12時間真空乾燥しポリイミド樹脂粉末を得
た。この樹脂粉末を固形分10%となるようにシクロヘキ
サノンに溶解し、ポリイミド樹脂溶液とした。Example 3 Dry nitrogen was passed through a flask equipped with a stirrer, a cooler, a Dean-Stark separator and a nitrogen introducing tube to replace the inside of the flask, and then 10.01 g of 4,4'-diaminodiphenyl ether was added.
And 2,2'-bis (3-amino-4-hydroxyphenyl)
Hexafluoropropane 18.31 g and N-methyl-2-pyrrolidone 237.4 g were added and dissolved. To this solution, 31.02 g of 4,4'-oxydiphthalic dianhydride was added as a powder in several divided portions while paying attention to heat generation. While suppressing the heat generated by the reaction in an ice bath, stirring was continued for 12 hours to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solution of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder was dissolved in N-methyl-2-pyrrolidone to a concentration of 0.5 g / 100 ml and the logarithmic viscosity at 30 ° C. was measured to be 0.82 dl / g. 40.0 g of toluene was added to this polyamic acid solution, and the mixture was refluxed at 200 ° C. for 3 hours for imidization. Water generated by imidization was continuously taken out of the system by a Dean-Stark water separator. This reaction solution is poured into a large amount of water and methanol mixed solution to reprecipitate the polyimide resin,
Further, this was vacuum dried for 12 hours to obtain a polyimide resin powder. This resin powder was dissolved in cyclohexanone so that the solid content was 10% to obtain a polyimide resin solution.
【0030】このポリイミド樹脂溶液100gにIRGAC
URE261(チバガイギー社製、商品名)1.5 g と1,
3,5-トリ(アセトキシメチル)ベンゼン 0.85gを溶解さ
せ、1.0μm フィルターにて加圧濾過を行い感光性樹脂
組成物を製造した。IRGAC was added to 100 g of this polyimide resin solution.
URE261 (Ciba Geigy, trade name) 1.5 g and 1,
0.85 g of 3,5-tri (acetoxymethyl) benzene was dissolved and pressure-filtered with a 1.0 μm filter to produce a photosensitive resin composition.
【0031】この組成物をスピンナーでシリコンウエハ
ー上に回転塗布し、ついで80℃の熱板上で 5分間乾燥さ
せ膜厚 3μm の塗膜を得た。この塗膜上にレリーフパタ
ーンのマスクを密着させ、超高圧水銀灯を用いて紫外線
を露光した。このときの露光量は6mJ/cm2 であった。
露光後、シクロヘキサノンとイソプロピルアルコールと
の混合溶液で現像しレリーフパターンを得た。この現像
はパターン幅 2.5μmの線を解像していた。このパター
ンを 200℃で 1時間加熱加圧処理して残留の有機溶媒を
乾燥させ、耐熱性のレリーフパターンを得た。このパタ
ーンはさらに 200℃で 1時間の加熱処理を行ってもパタ
ーンのぼやけや加熱減量が起きなかった。This composition was spin coated on a silicon wafer with a spinner and then dried on a hot plate at 80 ° C. for 5 minutes to obtain a coating film having a thickness of 3 μm. A mask having a relief pattern was brought into close contact with this coating film and exposed to ultraviolet rays using an ultrahigh pressure mercury lamp. The exposure dose at this time was 6 mJ / cm 2 .
After exposure, it was developed with a mixed solution of cyclohexanone and isopropyl alcohol to obtain a relief pattern. This development resolved lines with a pattern width of 2.5 μm. This pattern was heated and pressed at 200 ° C. for 1 hour to dry the residual organic solvent to obtain a heat-resistant relief pattern. When this pattern was further heat-treated at 200 ° C for 1 hour, there was no blurring of the pattern or heating loss.
【0032】実施例4 攪拌機、冷却器および窒素導入管を設けたフラスコに乾
燥窒素を通してフラスコ内を置換した後、 4,4′−ジア
ミノジフェニルメタン19.83gと、N−メチル−2-ピロリ
ドン 169.0g を加えて溶解した。この溶解に2,3,5-トリ
カルボキシシクロペンチル酢酸二無水物22.42gを粉体の
まま、発熱に注意しながら数回に分割して加えた。反応
による発熱を氷浴中で抑えながら攪拌を続けそのまま12
時間攪拌してポリアミック酸溶液を調製した。このポリ
アミック酸溶液の一部を水とメタノール混合溶媒中に投
入、再沈殿させてポリアミック酸の粉末を得た。この粉
末をN−メチル−2-ピロリドン 0.5g /100 ml濃度とな
るように溶解し、30℃の対数粘度を測定したところ 0.7
5 dl/g であった。このポリアミック酸溶液に無水酢酸
20.58g、ピリジン15.82gを投入し12時間攪拌してイミド
化を行った。この反応溶液を大量の水とメタノール混合
溶液中に投入しポリイミド樹脂を再沈殿し、さらにこれ
を12時間真空乾燥しポリイミド樹脂粉末を得た。この樹
脂粉末を固形分10%になるようにγ−ブチルラクトンに
溶解し、ポリイミド樹脂溶液を得た。Example 4 Dry nitrogen was passed through a flask equipped with a stirrer, a condenser and a nitrogen introducing tube to replace the inside of the flask, and then, 19.83 g of 4,4'-diaminodiphenylmethane and 169.0 g of N-methyl-2-pyrrolidone were added. In addition, it dissolved. To this solution, 22.42 g of 2,3,5-tricarboxycyclopentylacetic acid dianhydride was added as a powder in several divided portions while paying attention to heat generation. Continue to stir while suppressing the heat generated by the reaction in the ice bath 12
The mixture was stirred for a time to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solvent of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder was dissolved in N-methyl-2-pyrrolidone at a concentration of 0.5 g / 100 ml and the logarithmic viscosity at 30 ° C. was measured.
It was 5 dl / g. Acetic anhydride was added to this polyamic acid solution.
20.58 g and 15.82 g of pyridine were added and the mixture was stirred for 12 hours for imidization. The reaction solution was poured into a large amount of a mixed solution of water and methanol to reprecipitate the polyimide resin, which was further vacuum dried for 12 hours to obtain a polyimide resin powder. This resin powder was dissolved in γ-butyl lactone so that the solid content was 10% to obtain a polyimide resin solution.
【0033】このポリイミド樹脂溶液100gにトリフェニ
ルスルフォニウムトリフルオロメタンスルフォン酸塩
0.9g と1,3,5-トリ(アセトキシメチル)ベンゼン 0.7g
を溶解させ、 1.0μm フィルターにて加圧濾過を行い
感光性樹脂組成物を製造した。100 g of this polyimide resin solution was mixed with triphenylsulfonium trifluoromethanesulfonate.
0.9g and 1,3,5-tri (acetoxymethyl) benzene 0.7g
Was dissolved and pressure-filtered with a 1.0 μm filter to produce a photosensitive resin composition.
【0034】この組成物をスピンナーでシリコンウエハ
ー上に回転塗布し、ついで80℃の熱板上で 5分間乾燥さ
せ膜厚 3μm の塗膜を得た。この塗膜上にレリーフパタ
ーンのマスクを密着させ、超高圧水銀灯を用いて紫外線
を露光した。このときの露光量は6mJ/cm2 であった。
露光後、γ−ブチルラクトンとメタノールとの混合溶媒
で現像し、レリーフパターンを得た。この現像はパター
ン幅 5μm の線を解像していた。このパターンを 200℃
で 1時間加熱処理して残留の有機溶媒を乾燥させ、耐熱
性のレリーフパターンを得た。このパターンはさらに 2
00℃で 1時間の加熱処理を行ってもパターンのぼやけや
加熱減量が起きなかった。This composition was spin coated on a silicon wafer with a spinner and then dried on a hot plate at 80 ° C. for 5 minutes to obtain a coating film having a thickness of 3 μm. A mask having a relief pattern was brought into close contact with this coating film and exposed to ultraviolet rays using an ultrahigh pressure mercury lamp. The exposure dose at this time was 6 mJ / cm 2 .
After exposure, it was developed with a mixed solvent of γ-butyl lactone and methanol to obtain a relief pattern. This development resolved lines with a pattern width of 5 μm. This pattern is 200 ℃
After heating for 1 hour, the residual organic solvent was dried to obtain a heat-resistant relief pattern. This pattern is 2 more
Even if the heat treatment was carried out at 00 ° C for 1 hour, there was no blurring of the pattern or heating loss.
【0035】比較例 攪拌機、冷却器および窒素導入管を設けたフラスコに乾
燥窒素を通してフラスコ内を置換した後、 4,4′−ジア
ミノジフェニルエーテル20.02gと、N−メチル−2-ピロ
リドン 376.5g を加えて溶解した。この溶液にピロメリ
ット酸二無水物21.81gを粉体のまま、発熱に注意しなが
ら数回に分割して加えた。反応による発熱を氷浴中で抑
えながら攪拌を続けそのまま 8時間攪拌してポリアミッ
ク酸溶液を調製した。このポリアミック酸溶液の一部を
水とメタノール混合溶液中に投入、再沈殿させてポリア
ミック酸の粉末を得た。この粉末をN−メチル−2-ピロ
リドン 0.5g /100 ml濃度となるように溶解し、30℃の
対数粘度を測定したところ1.32 dl/g であった。Comparative Example After dry nitrogen was passed through a flask equipped with a stirrer, a condenser and a nitrogen inlet tube, the inside of the flask was replaced with 20.02 g of 4,4'-diaminodiphenyl ether and 376.5 g of N-methyl-2-pyrrolidone. Dissolved. To this solution, 21.81 g of pyromellitic dianhydride was added as a powder in several divided portions while paying attention to heat generation. While suppressing the heat generated by the reaction in an ice bath, stirring was continued for 8 hours to prepare a polyamic acid solution. A part of this polyamic acid solution was put into a mixed solution of water and methanol and reprecipitated to obtain a polyamic acid powder. This powder was dissolved in N-methyl-2-pyrrolidone at a concentration of 0.5 g / 100 ml and the logarithmic viscosity at 30 ° C. was measured to be 1.32 dl / g.
【0036】このポリアミック酸溶液100gに2-(N,N
−ジメチルアミノ)エチルメタクリレート 8.23gとラジ
カル発生剤であるIRGACURE907(チバガイギ
ー社製、商品名) 1.0g を配合溶解させ 1.0μm フィル
ターにて加圧濾過を行い感光性樹脂組成物を製造した。2- (N, N) was added to 100 g of this polyamic acid solution.
-Dimethylamino) ethyl methacrylate 8.23 g and IRGACURE 907 (manufactured by Ciba-Geigy Co., Ltd., trade name) as a radical generator were mixed and dissolved, and pressure filtration was performed with a 1.0 μm filter to produce a photosensitive resin composition.
【0037】この組成物をスピンナーでシリコンウエハ
ー上に回転塗布し、ついで80℃の熱板上で 5分間乾燥さ
せ膜厚 3μm の塗膜を得た。この塗膜上にレリーフパタ
ーンのマスクを密着させ、超高圧水銀灯を用いて紫外線
を露光した。このときの露光量は 1200mJ/cm2 であっ
た。露光後、N−メチル−2-ピロリドンとメタノールと
の混合溶媒で現像しレリーフパターンを得た。この現像
はパターン幅 100μmの線を解像するのにとどまった。This composition was spin-coated on a silicon wafer with a spinner and then dried on a hot plate at 80 ° C. for 5 minutes to obtain a coating film having a thickness of 3 μm. A mask having a relief pattern was brought into close contact with this coating film and exposed to ultraviolet rays using an ultrahigh pressure mercury lamp. The exposure amount at this time was 1200 mJ / cm 2 . After exposure, it was developed with a mixed solvent of N-methyl-2-pyrrolidone and methanol to obtain a relief pattern. This development only resolved lines with a pattern width of 100 μm.
【0038】[0038]
【発明の効果】以上の説明から明らかなように、本発明
の感光性樹脂組成物は、感光性、解像性に優れたもので
あり、かつ高温による加熱を必要としないもので、特に
プリント配線板の絶縁層やIC、LSI等の保護膜や層
間絶縁膜、液晶の配向膜等として好適なものである。As is apparent from the above description, the photosensitive resin composition of the present invention is excellent in photosensitivity and resolution and does not require heating at high temperature, and is particularly suitable for printing. It is suitable as an insulating layer for wiring boards, a protective film for ICs, LSIs, etc., an interlayer insulating film, an alignment film for liquid crystals, and the like.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/312 B H05K 3/06 H 3/28 D ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01L 21/312 B H05K 3/06 H 3/28 D
Claims (1)
溶性ポリイミド樹脂、 【化1】 (但し、式中、R1 は 4価の酸成分残基を、R2 は 2価
のジアミン成分残基を、n は1 以上の整数をそれぞれ表
し、R1 およびR2 のうち少なくとも25モル%以上の残
基が芳香族環を含む) (B)光分解性プロトン発生剤および (C)多官能潜在性親電子剤 を必須成分としてなることを特徴とする感光性樹脂組成
物。1. An organic solvent-soluble polyimide resin represented by the following general formula (A): (However, in the formula, R 1 represents a tetravalent acid component residue, R 2 represents a divalent diamine component residue, n represents an integer of 1 or more, and at least 25 mol of R 1 and R 2 % Or more of residues include an aromatic ring) (B) a photodegradable proton generator and (C) a polyfunctional latent electrophilic agent as essential components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6159126A JPH086250A (en) | 1994-06-17 | 1994-06-17 | Photosensitive resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6159126A JPH086250A (en) | 1994-06-17 | 1994-06-17 | Photosensitive resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH086250A true JPH086250A (en) | 1996-01-12 |
Family
ID=15686813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6159126A Pending JPH086250A (en) | 1994-06-17 | 1994-06-17 | Photosensitive resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH086250A (en) |
-
1994
- 1994-06-17 JP JP6159126A patent/JPH086250A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5216179B2 (en) | Negative photosensitive polyimide composition and image forming method using the same | |
| JP4001569B2 (en) | Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition containing the same | |
| JP2890213B2 (en) | Photosensitive polymer composition and pattern forming method | |
| CN107407878B (en) | Photosensitive resin composition | |
| KR101969197B1 (en) | Positive photosensitive resin composition | |
| EP1388758A1 (en) | Photosensitive heat resistant resin precursor composition | |
| JP3064579B2 (en) | Pattern formation method | |
| KR20020056818A (en) | Positive-Type Photosenstive Polyimide Precusor and Composition Comprising the Same | |
| JPH07181689A (en) | Method of forming a patterned polyimide coating on a substrate | |
| WO1995004305A1 (en) | Photosensitive fluorinated poly(amic acid) aminoacrylate salt | |
| JP2008308572A (en) | Polyimide varnish | |
| KR100753745B1 (en) | Positive Photosensitive Polyimide Precursor Composition | |
| JP3363580B2 (en) | Method for producing photosensitive resin composition and relief pattern | |
| JPH09100350A (en) | Photosensitive polyimide siloxane, composition and insulating film | |
| JP3319000B2 (en) | Actinic radiation sensitive composition | |
| JPH086248A (en) | Photosensitive resin composition | |
| JPH086249A (en) | Photosensitive resin composition | |
| JPH088242A (en) | Semiconductor device | |
| JPH088243A (en) | Semiconductor device | |
| JP2854830B2 (en) | Photosensitive polymer composition and pattern forming method | |
| JP2003241371A (en) | Photosensitive resin composition and method for producing the same | |
| JPH088244A (en) | Semiconductor device | |
| JPH08113709A (en) | Photosensitive polymer composition | |
| JP2003015290A (en) | Photosensitive resin composition and positive type pattern forming method | |
| JP2000250209A (en) | Photosensitive resin composition and manufacture thereof |