JPH0891992A - Production of diamond-coated brazed product - Google Patents
Production of diamond-coated brazed productInfo
- Publication number
- JPH0891992A JPH0891992A JP6259175A JP25917594A JPH0891992A JP H0891992 A JPH0891992 A JP H0891992A JP 6259175 A JP6259175 A JP 6259175A JP 25917594 A JP25917594 A JP 25917594A JP H0891992 A JPH0891992 A JP H0891992A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- diamond
- silicon substrate
- diamond thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 77
- 239000010432 diamond Substances 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000010409 thin film Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 31
- 239000000853 adhesive Substances 0.000 claims abstract description 3
- 230000001070 adhesive effect Effects 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 32
- 238000005219 brazing Methods 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 8
- 238000001308 synthesis method Methods 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000003786 synthesis reaction Methods 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 3
- 238000000227 grinding Methods 0.000 abstract description 3
- 238000010189 synthetic method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- AHGIVYNZKJCSBA-UHFFFAOYSA-N [Ti].[Ag].[Cu] Chemical compound [Ti].[Ag].[Cu] AHGIVYNZKJCSBA-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ダイヤモンド薄膜ろう
付け製品の製造方法に関する。より詳細には切削工具、
電子基板材料などの製造において、基体にダイヤモンド
薄膜をろう付けする技術に関する。FIELD OF THE INVENTION The present invention relates to a method for producing a diamond thin film brazed product. More specifically a cutting tool,
The present invention relates to a technique for brazing a diamond thin film on a substrate in the production of electronic substrate materials and the like.
【０００２】[0002]
【従来の技術】従来、気相合成法によるダイヤモンド薄
膜を基板にろう付けしたダイヤモンド工具が用いられて
いる。これはシリコンなどの基板上に気相合成法により
ダイヤモンド薄膜を形成し、ついで基板を研削加工など
により除去した後、銀ろうなどのろう材を介在させてス
ローアウェイチップなどの基体にろう付けしたものであ
る。2. Description of the Related Art Conventionally, a diamond tool in which a diamond thin film formed by vapor phase synthesis is brazed to a substrate has been used. This is because a diamond thin film is formed on a substrate such as silicon by a vapor phase synthesis method, then the substrate is removed by grinding, etc., and then a brazing material such as silver brazing is interposed to braze it to a substrate such as a throwaway chip. It is a thing.
【０００３】[0003]
【発明が解決しようとする課題】前記従来のろう付け方
法は、シリコンの基板上にダイヤモンド薄膜を形成した
後、基板をダイヤモンドディスクなどを用いて研削除去
するか、あるいはフッ化水素酸、硝酸、もしくは王水な
どの強酸性の薬液を用いて溶解除去することにより、実
質的にダイヤモンド薄膜のみとしたものを切削工具など
の基体にろう付けするものであるが、ダイヤモンド薄膜
と基体との密着力が乏しくダイヤモンド薄膜が剥離しや
すい。一方、基板上にシリコンカーバイドを形成させ、
表面をダイヤモンド砥粒を用いて粗面化した後、その上
層にダイヤモンド薄膜を形成させ、基板の一部または全
部を除去したもの(特開平6-1694号公報)が開示されてい
る。しかしこの方法によるダイヤモンド薄膜の形成は、
予め基板上にシリコンカーバイドを形成させるために皮
膜形成の条件を厳密に制御する必要があり、煩雑な作業
を必要とする。本発明は、煩雑な作業を必要とせずにシ
リコンカーバイド層を有するダイヤモンド薄膜をシリコ
ン基板上に形成させた後シリコン基板を除去し、シリコ
ンカーバイド面と工具などの基体面が当接するようにろ
う付けすることからなる、工具などの基体との強固な密
着力を有するダイヤモンド薄膜ろう付け製品の製造方法
を提供することを目的とする。In the conventional brazing method, a diamond thin film is formed on a silicon substrate and then the substrate is ground and removed by using a diamond disk or the like, or hydrofluoric acid, nitric acid, Alternatively, it is brazed to a substrate such as a cutting tool by using a strongly acidic chemical solution such as aqua regia to remove it, and the diamond thin film is essentially adhered to the substrate. The diamond thin film is easy to peel off. On the other hand, by forming silicon carbide on the substrate,
Japanese Patent Laid-Open No. 61694/1994 discloses a method in which a surface of a substrate is roughened by using diamond abrasive grains, a diamond thin film is formed on the surface of the roughened surface, and a part or all of the substrate is removed. However, the formation of diamond thin film by this method is
In order to form silicon carbide on the substrate in advance, it is necessary to strictly control the conditions for forming the film, which requires complicated work. The present invention removes the silicon substrate after forming a diamond thin film having a silicon carbide layer on the silicon substrate without requiring complicated work, and brazing so that the silicon carbide surface and the substrate surface such as a tool come into contact with each other. It is an object of the present invention to provide a method for producing a diamond thin film brazed product having a strong adhesion to a substrate such as a tool.
【０００４】[0004]
【課題を解決するための手段】本発明の製造方法は、気
相合成法によりシリコン基板上に、シリコンカーバイド
層を介してダイヤモンド層を被覆した積層体を形成し、
この積層体からシリコン基板のみを除去し、残存する薄
膜をシリコンカーバイド層を接着面にして基体にろう付
けすることを特徴としている。そして積層体からシリコ
ン基板を除去する方法として、ダイヤモンド層を被覆す
る際にこのダイヤモンド被覆層中に応力を残存させてお
き、ダイヤモンド薄膜とシリコン基板の界面に生じる応
力により自然剥離させる、あるいはシリコン基板を機械
研削する、さらにシリコン基板をフッ化水素酸と硝酸の
混合液で溶解させる、などの方法を用いることが可能で
ある。The manufacturing method of the present invention comprises forming a laminate having a diamond layer coated on a silicon substrate through a silicon carbide layer by a vapor phase synthesis method,
Only the silicon substrate is removed from this laminate, and the remaining thin film is brazed to the substrate with the silicon carbide layer as the adhesive surface. Then, as a method of removing the silicon substrate from the laminated body, the stress is left in the diamond coating layer when coating the diamond layer, and is naturally peeled off by the stress generated at the interface between the diamond thin film and the silicon substrate. Can be mechanically ground, and the silicon substrate can be dissolved with a mixed solution of hydrofluoric acid and nitric acid.
【０００５】[0005]
【作用】本発明の製造方法においては、シリコン基板上
に気相合成法を用いてダイヤモンド薄膜を形成させる
が、予め特にシリコン基板上にシリコンカーバイドを形
成させるための操作を必要とせず、ダイヤモンド薄膜を
形成させる条件で操作するのみで、ダイヤモンド薄膜形
成中にシリコン基板とダイヤモンド薄膜との間に薄いシ
リコンカーバイド層が生成する。シリコンカーバイドと
ダイヤモンド薄膜との密着力は、シリコン基板とダイヤ
モンド薄膜との密着力よりも優れており、シリコン基板
を除去した後に残存する前記の薄いシリコンカーバイド
層をダイヤモンド薄膜と工具などの基体との間に介在さ
せてろう付けすることにより、特に積極的に厚いシリコ
ンカーバイド皮膜を形成させなくとも、工具などの基体
との強固な密着力を有するダイヤモンド薄膜ろう付け製
品を得ることができる。In the manufacturing method of the present invention, the diamond thin film is formed on the silicon substrate by the vapor phase synthesis method, but the operation for forming the silicon carbide on the silicon substrate in advance is not particularly required. The thin silicon carbide layer is formed between the silicon substrate and the diamond thin film during the diamond thin film formation simply by operating under the conditions for forming the diamond thin film. The adhesion between the silicon carbide and the diamond thin film is superior to the adhesion between the silicon substrate and the diamond thin film, and the thin silicon carbide layer remaining after removing the silicon substrate is used as a base between the diamond thin film and the substrate such as a tool. By interposing between them and brazing, it is possible to obtain a diamond thin film brazed product having a strong adhesion to a substrate such as a tool without particularly aggressively forming a thick silicon carbide film.
【０００６】ダイヤモンド薄膜を形成させた後、シリコ
ン基板を除去する方法としては、 (1) ダイヤモンド薄膜をシリコン基板上に形成させる際
に、シリコン基板温度、炭素源となる気体濃度などの条
件を制御し、ダイヤモンド薄膜中に引張応力を、シリコ
ン基板中に圧縮応力を生ぜしめ、ダイヤモンド薄膜とシ
リコン基板との界面に生じる応力によりダイヤモンド薄
膜を自然剥離させる。 (2) ダイヤモンドディスクなどにより研削加工し除去す
る。 (3) フッ化水素酸と硝酸の混合液を用いて溶解除去す
る。 などの方法を採用できる。As a method of removing the silicon substrate after forming the diamond thin film, (1) when forming the diamond thin film on the silicon substrate, control the conditions such as the temperature of the silicon substrate and the concentration of gas serving as a carbon source. Then, a tensile stress is generated in the diamond thin film and a compressive stress is generated in the silicon substrate, and the diamond thin film is naturally peeled off by the stress generated at the interface between the diamond thin film and the silicon substrate. (2) Grind and remove with a diamond disk. (3) Dissolve and remove using a mixed solution of hydrofluoric acid and nitric acid. Can be adopted.
【０００７】上記のようにして得られたダイヤモンド薄
膜とシリコンカーバイド層からなる２層の積層体を、シ
リコンカーバイド層と工具などの基体が当接するように
して前記積層体を工具などの基体に銀ろうなどのろう材
を用いてろう付けする。The two-layer laminate comprising the diamond thin film and the silicon carbide layer obtained as described above is brought into contact with the silicon carbide layer and a substrate such as a tool so that the laminate is silvered on the substrate such as a tool. Braze using a brazing material such as wax.
【０００８】[0008]
【実施例】以下、実施例により、本発明をより詳細に説
明する。まず、シリコン基板を準備する。基板は薄いほ
うが好ましいが、取扱いの容易さ、および強度の点から
通常は0.1〜2mm程度、好ましくは0.2〜1mm程度とする。
また基板の面積はろう付けされるダイヤモンド薄膜の大
きさ（面積）が小さい場合は10〜 100個分をまとめて一
度で処理するために大きい基板を用いるが、大きいダイ
ヤモンド薄膜を用いる場合はその大きさおよび形状の基
板を準備する。本実施例では厚さ0.50mm、12mm角の基板
15個を一度で処理した。The present invention will be described in more detail with reference to examples. First, a silicon substrate is prepared. Although the substrate is preferably thin, it is usually about 0.1 to 2 mm, preferably about 0.2 to 1 mm from the viewpoint of easy handling and strength.
When the size (area) of the diamond thin film to be brazed is small, a large substrate is used to process 10 to 100 pieces at a time, but when a large diamond thin film is used A substrate having a size and shape is prepared. In this example, a 0.50 mm thick, 12 mm square substrate
Fifteen were processed at once.
【０００９】つぎに、前記基板上にダイヤモンド薄膜を
形成させる気相合成法としては、熱電子放射材法、直流
アーク放電法、直流グロー放電法、マイクロ波放電法、
あるいは高電波放電法など、任意の方法を採用し得る。
シリコン基板上に気相合成法によりダイヤモンド薄膜を
形成させると、目的とするダイヤモンド薄膜の下層のシ
リコン基板との界面にシリコンカーバイドの薄層も同時
に生成する。 実施例１ 実施例１においてはマイクロ波放電法を用いて、基板を
強制水冷しながら水素流量100ml/min、メタン流量7.5ml
/min、作動圧力110Torr、放電電力1200Ｗとして100時間
を要して350μmの厚さのダイヤモンド膜を形成させた。
この場合、シリコン基板とダイヤモンド膜の間に10nmの
厚さのシリコンカーバイド層が生成した。気相合成法に
より形成したダイヤモンド薄膜の表面は比較的凹凸が激
しいので、場合により、この段階で通常のレーザー加工
に使用されるＹＡＧレーザーやダイヤモンドディスクな
どを用いて表面研磨を行ってもよい。Next, as a vapor phase synthesis method for forming a diamond thin film on the substrate, a thermoelectron emitting material method, a DC arc discharge method, a DC glow discharge method, a microwave discharge method,
Alternatively, any method such as the high radio wave discharge method can be adopted.
When a diamond thin film is formed on a silicon substrate by a vapor phase synthesis method, a thin layer of silicon carbide is simultaneously formed at the interface between the target diamond thin film lower layer and the silicon substrate. Example 1 In Example 1, the microwave discharge method was used, and the flow rate of hydrogen was 100 ml / min and the flow rate of methane was 7.5 ml while forced cooling the substrate with water.
A diamond film having a thickness of 350 μm was formed over 100 hours under the conditions of / min, operating pressure of 110 Torr and discharge power of 1200 W.
In this case, a 10-nm-thick silicon carbide layer was formed between the silicon substrate and the diamond film. Since the surface of the diamond thin film formed by the vapor phase synthesis method has relatively large irregularities, the surface may be polished at this stage using a YAG laser or a diamond disk used for ordinary laser processing in some cases.
【００１０】上記のようにして得られたダイヤモンド薄
膜が被覆されたシリコン基板は、シリコン基板、ダイヤ
モンド薄膜、および気相合成中にシリコン基板とダイヤ
モンド薄膜の間に生成した薄いシリコンカーバイド層か
らなる３層構造の積層体である。この３層構造の積層体
からシリコン基板を除去し、ダイヤモンド薄膜とシリコ
ンカーバイド層からなる２層構造の積層体とする。シリ
コン基板を除去する方法としては、前述したように下記
に示す方法を採用できる。すなわち、 (1) ダイヤモンドディスクなどにより研削加工し除去す
る。 (2) フッ化水素酸と硝酸の混合液を用いて溶解除去す
る。シリコンカーバイドはこれらの強酸には事実上溶解
しない。 実施例１においては、積層体を常温のフッ化水素酸20重
量%、硝酸20重量、および水60重量%からなる混酸の水溶
液に浸漬してシリコンを溶解除去した。The silicon substrate coated with the diamond thin film obtained as described above comprises a silicon substrate, a diamond thin film, and a thin silicon carbide layer formed between the silicon substrate and the diamond thin film during vapor phase synthesis. It is a laminate having a layered structure. The silicon substrate is removed from this three-layer structure laminate to obtain a two-layer structure laminate consisting of a diamond thin film and a silicon carbide layer. As a method for removing the silicon substrate, the following method can be adopted as described above. That is, (1) Grinding and removing with a diamond disk or the like. (2) Dissolve and remove using a mixed solution of hydrofluoric acid and nitric acid. Silicon carbide is practically insoluble in these strong acids. In Example 1, the laminated body was immersed in an aqueous solution of a mixed acid consisting of 20% by weight of hydrofluoric acid, 20% by weight of nitric acid, and 60% by weight of water at room temperature to dissolve and remove silicon.
【００１１】実施例２ 実施例２においては基板温度を880℃、水素流量 3ml/mi
n、メタン流量97ml/min、作動圧力90Torr、放電電力1250
Ｗとして90時間を要して300μmの厚さのダイヤモンド膜
を形成させた。得られた積層体を常温まで冷却するとシ
リコン基板が粉々に破壊し、シリコン基板とダイヤモン
ド膜の界面で剥離を生じた。この場合、剥離はシリコン
カーバイド層とシリコン基体の界面で生じ、シリコン基
板は殆ど全てが剥離し、シリコンカーバイド層は全てダ
イヤモンド薄膜に付着して残存しており、8nmの厚さのシ
リコンカーバイド層を有するダイヤモンド膜が得られ
た。Example 2 In Example 2, the substrate temperature was 880 ° C. and the hydrogen flow rate was 3 ml / mi.
n, methane flow rate 97 ml / min, working pressure 90 Torr, discharge power 1250
It took 90 hours for W to form a diamond film having a thickness of 300 μm. When the obtained laminated body was cooled to room temperature, the silicon substrate was broken into pieces and peeled at the interface between the silicon substrate and the diamond film. In this case, delamination occurs at the interface between the silicon carbide layer and the silicon substrate, almost all of the silicon substrate is delaminated, and all of the silicon carbide layer remains on the diamond thin film, leaving a silicon carbide layer with a thickness of 8 nm. A diamond film having was obtained.
【００１２】以上のようにして、ダイヤモンド薄膜とシ
リコンカーバイド層からなる２層構造の積層体が得られ
る。得られた積層体にはここでダイヤモンド面にＹＡＧ
レーザー、またはダイヤモンドディスクを用いて表面研
磨を施す。さらに、レーザーまたはダイヤモンドディス
クを用いて所望の大きさ、形状に切り出す。本実施例１
および２においては積層体のダイヤモンド面をダイヤモ
ンドディスクを用いて表面研磨した後、ＹＡＧレーザー
により 3mmの小片に切り出した。As described above, a laminate having a two-layer structure composed of a diamond thin film and a silicon carbide layer can be obtained. In the obtained laminated body, YAG is applied to the diamond surface.
Surface polishing is performed using a laser or a diamond disk. Further, it is cut into a desired size and shape using a laser or a diamond disk. Example 1
In Nos. 2 and 3, the diamond surface of the laminate was surface-polished with a diamond disk, and then cut into 3 mm pieces with a YAG laser.
【００１３】切り出した小片状のチップは、銀ろうなど
のろう材を用いて切削バイトにろう付けされる。ろう材
としては銅−銀−チタン系の活性ろう材を用い、真空雰
囲気でろう付けすることが好ましい。本実施例において
は上記の 3mmの小片に切り出した積層体を WESGO社製活
性ろう材（CUSIL-ABA(AG:63%、Cu:35.25%、Ti:1.75%(いず
れも重量％)、液相点:815℃)）を用い、超硬合金製切削
バイト(JIS K10、TNGA160404R)に当接し、1×10-4〜1×
10-6Torr程度の真空容器中で高周波誘導加熱装置により
830〜850℃の温度で20秒間加熱して接着し、ダイヤモン
ド薄膜被覆切削バイトとした。The cut small chips are brazed to a cutting tool using a brazing material such as silver brazing. As the brazing material, a copper-silver-titanium active brazing material is used, and it is preferable to braze in a vacuum atmosphere. In this example, the laminated body cut out into the above-mentioned small piece of 3 mm was made of WESGO active brazing material (CUSIL-ABA (AG: 63%, Cu: 35.25%, Ti: 1.75% (both are weight%), liquid phase). (Point: 815 ° C)), abutting against a cemented carbide cutting tool (JIS K10, TNGA160404R), 1 × 10 -4 to 1 ×
Using a high frequency induction heating device in a vacuum vessel of about 10 -6 Torr
It was heated at a temperature of 830 to 850 ° C for 20 seconds to be bonded to obtain a diamond thin film coated cutting tool.
【００１４】上記のようにして得られるダイヤモンド薄
膜被覆切削バイトは、３層構造のダイヤモンド薄膜被覆
積層体からシリコン基板を除去して露出したシリコンカ
ーバイド層を切削バイトに当接してろう付しており、こ
のシリコンカーバイド層とろう材との濡れ性が良好であ
るために強固な密着力が得られる。In the diamond thin film-coated cutting tool obtained as described above, the silicon substrate is removed from the diamond thin film-coated laminate having the three-layer structure, and the exposed silicon carbide layer is brought into contact with the cutting tool to be brazed. Since the wettability between the silicon carbide layer and the brazing material is good, a strong adhesion can be obtained.
【００１５】[0015]
【発明の効果】本発明の製造方法によればダイヤモンド
薄膜の気相合成過程でシリコン基板上に生成するシリコ
ンカーバイド層を有効に活用し、ろう材との良好な濡れ
性を利用して切削バイトなどの工具基体に強固なろう付
けを行うことができる。前記のシリコンカーバイド層
は、ダイヤモンド薄膜の気相合成過程で諸条件をダイヤ
モンド薄膜を生成させる条件に制御するのみでシリコン
基板上に生成し、ことさらシリコンカーバイド層を生成
させるための煩雑な操作を全く必要とせず、簡便に得る
ことができる。According to the manufacturing method of the present invention, the cutting tool is effectively utilized by utilizing the silicon carbide layer formed on the silicon substrate in the vapor phase synthesis process of the diamond thin film and utilizing the good wettability with the brazing material. It is possible to perform strong brazing on a tool substrate such as. The silicon carbide layer is formed on the silicon substrate only by controlling the various conditions in the vapor phase synthesis process of the diamond thin film to the conditions for forming the diamond thin film, and the complicated operation for forming the silicon carbide layer is completely eliminated. It can be easily obtained without the need.
Claims (4)
リコンカーバイド層を介してダイヤモンド層を被覆した
積層体を形成し、前記積層体から前記シリコン基板のみ
を除去し、残存する薄膜をシリコンカーバイド層を接着
面にして基体にろう付けすることを特徴とするダイヤモ
ンド薄膜を被覆したろう付け製品の製造方法。1. A laminate obtained by forming a diamond layer on a silicon substrate with a silicon carbide layer interposed therebetween by a vapor phase synthesis method, removing only the silicon substrate from the laminate, and removing the remaining thin film with silicon carbide. A method for producing a brazed product coated with a diamond thin film, which comprises brazing a layer to a substrate as an adhesive surface.
するに際し、前記ダイヤモンド層を被覆する際に、この
ダイヤモンド被覆層中に応力を残存させることを特徴と
する請求項１記載のダイヤモンド薄膜を被覆したろう付
け製品の製造方法。2. The diamond thin film according to claim 1, wherein stress is left in the diamond coating layer when the diamond layer is coated when the silicon substrate is removed from the laminate. For manufacturing brazed products.
するに際し、シリコン基板を機械研削することを特徴と
する請求項１または２記載のダイヤモンド薄膜を被覆し
たろう付け製品の製造方法。3. The method for producing a brazed product coated with a diamond thin film according to claim 1, wherein the silicon substrate is mechanically ground when removing the silicon substrate from the laminate.
するに際し、シリコン基板をフッ化水素酸と硝酸の混合
液で溶解させることを特徴とする請求項１または２記載
のダイヤモンド薄膜を被覆したろう付け製品の製造方
法。4. The brazing diamond film according to claim 1, wherein the silicon substrate is dissolved in a mixed solution of hydrofluoric acid and nitric acid when removing the silicon substrate from the laminate. Manufacturing method of attached products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6259175A JP3023056B2 (en) | 1994-09-28 | 1994-09-28 | Manufacturing method of diamond coated brazing products |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6259175A JP3023056B2 (en) | 1994-09-28 | 1994-09-28 | Manufacturing method of diamond coated brazing products |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0891992A true JPH0891992A (en) | 1996-04-09 |
| JP3023056B2 JP3023056B2 (en) | 2000-03-21 |
Family
ID=17330408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6259175A Expired - Fee Related JP3023056B2 (en) | 1994-09-28 | 1994-09-28 | Manufacturing method of diamond coated brazing products |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3023056B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60141697A (en) * | 1983-12-27 | 1985-07-26 | Pioneer Electronic Corp | Manufacture of diamond diaphragm |
| JPH03149140A (en) * | 1989-11-02 | 1991-06-25 | Asahi Daiyamondo Kogyo Kk | Manufacture of gaseous phase compound diamond tool |
| JPH05109625A (en) * | 1990-02-13 | 1993-04-30 | General Electric Co <Ge> | Polycrystalline CVD diamond substrate for epitaxial growth of semiconductor single crystals |
| JPH061694A (en) * | 1992-06-23 | 1994-01-11 | Sumitomo Electric Ind Ltd | Diamond member and manufacturing method thereof |
| JPH0740106A (en) * | 1993-07-30 | 1995-02-10 | Kobe Steel Ltd | Vapor phase synthetic diamond brazed tool having excellent heat resistance and manufacture thereof |
-
1994
- 1994-09-28 JP JP6259175A patent/JP3023056B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60141697A (en) * | 1983-12-27 | 1985-07-26 | Pioneer Electronic Corp | Manufacture of diamond diaphragm |
| JPH03149140A (en) * | 1989-11-02 | 1991-06-25 | Asahi Daiyamondo Kogyo Kk | Manufacture of gaseous phase compound diamond tool |
| JPH05109625A (en) * | 1990-02-13 | 1993-04-30 | General Electric Co <Ge> | Polycrystalline CVD diamond substrate for epitaxial growth of semiconductor single crystals |
| JPH061694A (en) * | 1992-06-23 | 1994-01-11 | Sumitomo Electric Ind Ltd | Diamond member and manufacturing method thereof |
| JPH0740106A (en) * | 1993-07-30 | 1995-02-10 | Kobe Steel Ltd | Vapor phase synthetic diamond brazed tool having excellent heat resistance and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3023056B2 (en) | 2000-03-21 |
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