JPH089402A - Degaussing circuit system - Google Patents
Degaussing circuit systemInfo
- Publication number
- JPH089402A JPH089402A JP6141798A JP14179894A JPH089402A JP H089402 A JPH089402 A JP H089402A JP 6141798 A JP6141798 A JP 6141798A JP 14179894 A JP14179894 A JP 14179894A JP H089402 A JPH089402 A JP H089402A
- Authority
- JP
- Japan
- Prior art keywords
- degaussing
- ceramic element
- semiconductor ceramic
- coil
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 abstract description 19
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000005476 soldering Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/0007—Elimination of unwanted or stray electromagnetic effects
- H01J2229/0046—Preventing or cancelling fields within the enclosure
- H01J2229/0053—Demagnetisation
Landscapes
- Video Image Reproduction Devices For Color Tv Systems (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は陰極線管の消磁回路装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a degaussing circuit device for a cathode ray tube.
【０００２】[0002]
【従来の技術】正特性サ−ミスタは、ある特定の温度で
抵抗が急激に大きくなるため、電流制限用素子、温度制
御用素子等として広く使用されている。例えば陰極線管
の消磁回路は、正特性サ−ミスタと消磁コイルとにより
構成されており、電源をいれた後、地磁気の影響を除去
するようにはたらく。図３にこのような消磁回路の基本
的な構成を示す。この消磁回路はたとえば基板上で正特
性サ−ミスタ２と消磁コイル３とが直列接続する構成と
なっている。電源が投入されると消磁回路に大きな電流
が流れ、消磁コイル３の近傍に磁場が発生すると同時に
正特性サ−ミスタ２が発熱する。正特性サ−ミスタ２を
構成している半導体セラミック素子２ａは温度が上がる
と抵抗が増加するという特性を有しているため、発熱す
るにつれて抵抗が増加しそれを流れる電流を制限する。
そして一定時間経過後に少ない電流が流れる定常状態と
なる。このような消磁回路に用いられる正特性サ−ミス
タ２は図４（１）に示すようにバネ端子２１、２１で保
持された半導体セラミック素子２ａがケ−ス２２に収納
された構造を有するケ−スタイプや図４（２）に示すよ
うに半導体セラミック素子２ａの両主面に形成された二
層構造を有する電極６ａ、６ｂにリ−ド線８、８がそれ
ぞれ半田７、７で接続され、リ−ド線８、８の先端部を
残して絶縁樹脂５で被覆された構造のリ−ドタイプなど
がある。2. Description of the Related Art A PTC thermistor is widely used as a current limiting element, a temperature controlling element, etc. because its resistance rapidly increases at a certain temperature. For example, the degaussing circuit of a cathode ray tube is composed of a positive temperature coefficient thermistor and a degaussing coil, and works to remove the influence of the earth's magnetism after the power is turned on. FIG. 3 shows the basic configuration of such a degaussing circuit. This degaussing circuit has a structure in which a positive temperature coefficient thermistor 2 and a degaussing coil 3 are connected in series on a substrate, for example. When the power is turned on, a large current flows in the degaussing circuit, a magnetic field is generated in the vicinity of the degaussing coil 3, and at the same time, the positive temperature coefficient thermistor 2 generates heat. Since the semiconductor ceramic element 2a forming the positive temperature coefficient thermistor 2 has a characteristic that the resistance increases as the temperature rises, the resistance increases as the heat is generated, and the current flowing therethrough is limited.
Then, after a certain period of time, a steady state in which a small amount of current flows flows. The positive temperature coefficient thermistor 2 used in such a degaussing circuit has a structure in which a semiconductor ceramic element 2a held by spring terminals 21 and 21 is housed in a case 22, as shown in FIG. -Type wires and lead wires 8 and 8 are connected to the electrodes 6a and 6b having a double-layer structure formed on both main surfaces of the semiconductor ceramic element 2a by solders 7 and 7, respectively, as shown in FIG. , A lead type in which the lead wires 8 and 8 are covered with the insulating resin 5 except for the tip portions thereof.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら以上の構
成の消磁回路は以下に述べるような問題点がある。すな
わち消磁回路は、正特性サ−ミスタと消磁コイルとから
構成されているので、基板に組み込むためには二ヶの部
品を接続する必要がある。したがって基板に占める面積
が大きくなると共に、半田付けなどの接続工程もそれぞ
れの端子について必要であるから接続工数が多くなる。However, the degaussing circuit having the above configuration has the following problems. That is, since the degaussing circuit is composed of a positive temperature coefficient thermistor and a degaussing coil, it is necessary to connect two parts in order to assemble it on the substrate. Therefore, the area occupied on the substrate becomes large, and a connecting step such as soldering is also required for each terminal, which increases the number of connecting steps.
【０００４】本発明の目的は正特性サ−ミスタと消磁コ
イルとを一体化して小形化すると同時に、接続工数が削
減できる消磁回路装置を提供する事にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a degaussing circuit device in which a positive temperature coefficient thermistor and a degaussing coil are integrated and miniaturized, and at the same time, the number of connecting steps can be reduced.
【０００５】[0005]
【課題を解決するための手段】本発明の請求項１にかか
る消磁回路装置は、半導体セラミック素子とコイルとが
一体化されたことを特徴とする。A degaussing circuit device according to claim 1 of the present invention is characterized in that a semiconductor ceramic element and a coil are integrated.
【０００６】[0006]
【作用】請求項１記載の消磁回路装置は半導体セラミッ
ク素子と消磁コイルとが一体化されているので、基板の
占有面積を少なくできると共に、接続工数を減らすこと
ができる。In the degaussing circuit device according to the first aspect, since the semiconductor ceramic element and the degaussing coil are integrated, the area occupied by the substrate can be reduced and the number of connecting steps can be reduced.
【０００７】[0007]
（実施例１）本発明の実施例に係る消磁回路装置１を図
１の側面断面図を用いて説明する。図１に示す消磁回路
装置１は半導体セラミック素子２ａ、消磁コイル３、金
属接合部４ａ、４ｂが絶縁樹脂５により被覆された構造
となっている。(Embodiment 1) A degaussing circuit device 1 according to an embodiment of the present invention will be described with reference to the side sectional view of FIG. The degaussing circuit device 1 shown in FIG. 1 has a structure in which the semiconductor ceramic element 2a, the degaussing coil 3, and the metal joint portions 4a and 4b are covered with an insulating resin 5.
【０００８】半導体セラミック素子２ａは両主面に電極
６ａ、６ｂが形成されており、電極６ａ、６ｂは少なく
とも１層以上の電極からなり図１では２層構造を示して
いる。消磁コイル３は陰極線管（図示せず）に作用する
磁界を発生するコイル部３ａと、端子部３ｂ、３ｃとか
ら形成されている。前記端子部３ｂは半導体セラミック
素子２ａの電極６ａに、端子部３ｃは金属接合部４ａに
それぞれ半田７、７などにより接続されている。さらに
半導体セラミック素子２ａの電極６ｂは金属接合部４ｂ
とリ−ド線８を用いて半田７、７で接続されている。そ
して前記半導体セラミック素子２ａ、端子部３ｂ、３
ｃ、金属接合部４ａ、４ｂは金属接合部４ａ、４ｂの一
部を残して絶縁樹脂５で被覆されている。前記金属接合
部４ａ、４ｂの絶縁樹脂５で被覆されていない部分は図
示しない基板やリ−ド線など他の電子部品と例えばコネ
クタ構造によって接続される。In the semiconductor ceramic element 2a, electrodes 6a and 6b are formed on both main surfaces, and the electrodes 6a and 6b are composed of at least one layer and have a two-layer structure in FIG. The degaussing coil 3 is composed of a coil portion 3a that generates a magnetic field that acts on a cathode ray tube (not shown), and terminal portions 3b and 3c. The terminal portion 3b is connected to the electrode 6a of the semiconductor ceramic element 2a, and the terminal portion 3c is connected to the metal bonding portion 4a by solders 7 and 7, respectively. Further, the electrode 6b of the semiconductor ceramic element 2a is connected to the metal joint 4b.
And a lead wire 8 are used for connection with solder 7, 7. The semiconductor ceramic element 2a, the terminal portions 3b, 3
c, the metal joint portions 4a and 4b are covered with the insulating resin 5 except for a part of the metal joint portions 4a and 4b. The portions of the metal joints 4a and 4b that are not covered with the insulating resin 5 are connected to other electronic components such as a substrate and lead wires (not shown) by, for example, a connector structure.
【０００９】以上の構造を有する消磁回路装置１は金属
接合部４ａ、４ｂを回路基板の所定箇所に接続すること
により、消磁コイルと正特性サ−ミスタを同時に他の電
子部品と接続することができる。In the degaussing circuit device 1 having the above structure, the degaussing coil and the positive temperature coefficient thermistor can be simultaneously connected to other electronic parts by connecting the metal joints 4a and 4b to predetermined portions of the circuit board. it can.
【００１０】（実施例２）本発明の別の実施例に係る消
磁回路装置１０を図２の側面断面図を用いて説明する。(Embodiment 2) A degaussing circuit device 10 according to another embodiment of the present invention will be described with reference to the side sectional view of FIG.
【００１１】図２に示す消磁回路装置１０は半導体セラ
ミック素子２ａ、消磁コイル３、金属接合部４ａ、４
ｂ、絶縁板９が絶縁樹脂５により被覆された構造となっ
ている。The degaussing circuit device 10 shown in FIG. 2 has a semiconductor ceramic element 2a, a degaussing coil 3, metal joints 4a and 4a.
b, the insulating plate 9 is covered with the insulating resin 5.
【００１２】半導体セラミック素子２ａは両主面に電極
６ａ、６ｂが形成されており、電極６ａ、６ｂは少なく
とも１層以上の電極からなり図２では２層構造を示して
いる。消磁コイル３は陰極線管（図示せず）に作用する
磁界を発生するコイル部３ａと、端子部３ｂ、３ｃとか
ら形成されている。前記端子部３ｂは半導体セラミック
素子２ａの電極６ａに、端子部３ｃは金属接合部４ａに
それぞれ半田付けなどにより接続されている。電極６ａ
と金属接合部４ａとの間には電気的に絶縁するための絶
縁板９が配置されている。さらに半導体セラミック素子
２ａの電極６ｂには金属接合部４ｂが直接接続されてい
る。そして前記半導体セラミック素子２ａ、端子部３
ｂ、３ｃ、金属接合部４ａ、４ｂは金属接合部４ａ、４
ｂの一部を残して絶縁樹脂５で被覆されている。前記金
属接合部４ａ、４ｂの絶縁樹脂５で被覆されていない部
分は図示しない基板やリ−ド線など他の電子部品と例え
ばコネクタ構造によって接続される。In the semiconductor ceramic element 2a, electrodes 6a and 6b are formed on both main surfaces, and the electrodes 6a and 6b are composed of at least one or more layers, and a two-layer structure is shown in FIG. The degaussing coil 3 is composed of a coil portion 3a that generates a magnetic field that acts on a cathode ray tube (not shown), and terminal portions 3b and 3c. The terminal portion 3b is connected to the electrode 6a of the semiconductor ceramic element 2a, and the terminal portion 3c is connected to the metal bonding portion 4a by soldering or the like. Electrode 6a
An insulating plate 9 for electrical insulation is arranged between and the metal bonding portion 4a. Further, the metal joint 4b is directly connected to the electrode 6b of the semiconductor ceramic element 2a. Then, the semiconductor ceramic element 2a and the terminal portion 3
b, 3c and the metal joints 4a, 4b are the metal joints 4a, 4
It is covered with the insulating resin 5 while leaving a part of b. The portions of the metal joints 4a and 4b that are not covered with the insulating resin 5 are connected to other electronic components such as a substrate and lead wires (not shown) by, for example, a connector structure.
【００１３】以上の構造を有する消磁回路装置１０は金
属接合部４ａ、４ｂを回路基板の所定箇所に接続するこ
とにより、消磁コイルと正特性サ−ミスタを同時に他の
電子部品と接続することができる。In the degaussing circuit device 10 having the above structure, the degaussing coil and the positive temperature coefficient thermistor can be simultaneously connected to other electronic components by connecting the metal joints 4a and 4b to predetermined portions of the circuit board. it can.
【００１４】[0014]
【発明の効果】本発明にかかる消磁回路装置は、半導体
セラミック素子と消磁コイルとが内部で接続された一体
型構造を有しているので、それぞれ独立した部品である
正特性サ−ミスタと消磁コイルにより消磁回路を形成す
る場合に比べて、基板などに組み込む時に占有面積を削
減できるため、高密度実装、小形化が実現できる。また
接続箇所を減少したのでほかの電子部品との接続工数を
削減できる。Since the degaussing circuit device according to the present invention has an integrated structure in which the semiconductor ceramic element and the degaussing coil are internally connected, a positive temperature coefficient thermistor and a degaussing device, which are independent components, are provided. Compared with the case where a degaussing circuit is formed by a coil, the occupied area can be reduced when incorporated in a substrate or the like, so that high-density mounting and downsizing can be realized. Moreover, since the number of connection points is reduced, the number of connection steps with other electronic components can be reduced.
【図１】本発明に係る一実施例消磁回路装置の側面断面
図である。FIG. 1 is a side sectional view of a degaussing circuit device according to an embodiment of the present invention.
【図２】本発明に係る別の実施例消磁回路装置の側面断
面図である。FIG. 2 is a side sectional view of a degaussing circuit device according to another embodiment of the present invention.
【図３】本発明に係る消磁回路図である。FIG. 3 is a degaussing circuit diagram according to the present invention.
【図４】従来の正特性サ−ミスタの側面断面図である。FIG. 4 is a side sectional view of a conventional positive temperature coefficient thermistor.
１、１０ 消磁回路装置 ２ 正特性サ−ミスタ ２ａ 半導体セラミック素子 ３ 消磁コイル ３ａ コイル部 ３ｂ、３ｃ 端子部 ４ａ、４ｂ 金属接合部 ５ 絶縁樹脂 ６ａ、６ｂ 電極 ７ 半田 ８ リ−ド線 ９ 絶縁板 1, 10 Degaussing circuit device 2 Positive characteristic thermistor 2a Semiconductor ceramic element 3 Degaussing coil 3a Coil part 3b, 3c Terminal part 4a, 4b Metal joint part 5 Insulating resin 6a, 6b Electrode 7 Solder 8 Lead wire 9 Insulating plate
Claims (1)
されたことを特徴とする消磁回路装置。1. A degaussing circuit device in which a semiconductor ceramic element and a coil are integrated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141798A JPH089402A (en) | 1994-06-23 | 1994-06-23 | Degaussing circuit system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141798A JPH089402A (en) | 1994-06-23 | 1994-06-23 | Degaussing circuit system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH089402A true JPH089402A (en) | 1996-01-12 |
Family
ID=15300390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6141798A Pending JPH089402A (en) | 1994-06-23 | 1994-06-23 | Degaussing circuit system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH089402A (en) |
-
1994
- 1994-06-23 JP JP6141798A patent/JPH089402A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |