JPH089773B2 - Vapor deposition equipment - Google Patents
Vapor deposition equipmentInfo
- Publication number
- JPH089773B2 JPH089773B2 JP61265937A JP26593786A JPH089773B2 JP H089773 B2 JPH089773 B2 JP H089773B2 JP 61265937 A JP61265937 A JP 61265937A JP 26593786 A JP26593786 A JP 26593786A JP H089773 B2 JPH089773 B2 JP H089773B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- vacuum chamber
- microwave
- magnetic field
- deposition apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、蒸着装置とくにマイクロ波と磁場を印加し
てイオン化を促進させた蒸着装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a vapor deposition apparatus, and more particularly to a vapor deposition apparatus in which a microwave and a magnetic field are applied to promote ionization.
従来の技術 真空を利用した薄膜を形成する方法として蒸着法，ス
パッタ法，イオンプレーティング法，気相成長法などが
ある。化合物薄膜の形成や膜質をよくするためイオン化
を促進する方法としてイオンプレーティング法がある。
第２図に従来のイオンプレーティング法の蒸着装置を示
す。１は蒸着源、７はグリッド電極、５は基板、４は真
空槽、６は蒸着物である。Conventional technology As a method of forming a thin film using vacuum, there are a vapor deposition method, a sputtering method, an ion plating method, a vapor phase growth method and the like. There is an ion plating method as a method for promoting ionization in order to form a compound thin film and improve the film quality.
FIG. 2 shows a conventional vapor deposition apparatus of the ion plating method. Reference numeral 1 is a vapor deposition source, 7 is a grid electrode, 5 is a substrate, 4 is a vacuum chamber, and 6 is a vapor deposition material.
蒸着源１の蒸着物６より発生した電気的に中性あるい
はイオン化した蒸着粒子のうちイオンを、負電位にして
あるグリッド電極７によって加速して、基板５に至らし
めて、良質な膜を得るものである（麻蒔立男著「薄膜作
成の基礎」第５章,6章,7章）。Ions of electrically neutralized or ionized vapor deposition particles generated from the vapor deposition material 6 of the vapor deposition source 1 are accelerated by the grid electrode 7 having a negative potential to reach the substrate 5 to obtain a high quality film. (Tachio Masaki, "Basics of Thin Film Creation", Chapters 5, 6, and 7).
発明が解決しようとする問題点 ところが上記のような構成によると、イオン化を促進
させるための電極７が必要となり、活性化したイオンに
よる電極へのスパッタリングによって膜中に不純物とし
て電極材料が混入してしまう。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, according to the above configuration, the electrode 7 for promoting the ionization is required, and the electrode material is mixed as an impurity into the film by the sputtering of the activated ion to the electrode. I will end up.
本発明は、上記のような問題に鑑み電極がなくかつイ
オン化を促進させて良質な膜形成を可能にする蒸着装置
を提供するものである。In view of the above problems, the present invention provides a vapor deposition apparatus that has no electrodes and promotes ionization to enable high quality film formation.
問題点を解決するための手段 問題点を解決するため、本発明の蒸着装置は、真空槽
と、真空槽無いに設置された蒸発源と、真空槽内に設置
され蒸発源を蒸着させる基板と、真空槽内にマイクロ波
を導入する手段と、真空槽内に磁場を印加する手段とを
有し、さらに、磁場の強度をマイクロ波の周波数で決ま
る電子サイクロトロン共鳴条件以上にし、かつ、蒸発源
から放出される励起された蒸発粒子の飛りゅう方向とマ
イクロ波の伝搬方向を一致させた構成となっている。Means for Solving the Problems In order to solve the problems, the vapor deposition apparatus of the present invention comprises a vacuum chamber, an evaporation source installed in the vacuum chamber, and a substrate installed in the vacuum chamber to deposit the evaporation source. , A means for introducing a microwave into the vacuum chamber and a means for applying a magnetic field within the vacuum chamber, and further, the strength of the magnetic field is set to an electron cyclotron resonance condition or more determined by the frequency of the microwave, and an evaporation source. The structure is such that the flight direction of the excited vaporized particles emitted from the microwave and the propagation direction of the microwave are matched.
作用 本発明は、蒸着源から発生した電気的に中性の中性粒
子およびイオンを、基板に至るまでマイクロ波と磁場に
よってイオン化および励起するものである。すなわちマ
イクロ波を用いるので電極が不必要であり、また磁場強
度を電子サイクロトロン共鳴条件を満たす磁場強度にす
ることにより、高エネルギーでかつ高密度の電子を発生
し、中性粒子およびイオンを励起およびイオン化を促進
できる。その結果、励起およびイオンした粒子によって
良質な膜を得ることができる。Function The present invention is to ionize and excite electrically neutral neutral particles and ions generated from a vapor deposition source by a microwave and a magnetic field up to the substrate. In other words, since microwaves are used, no electrodes are required, and by setting the magnetic field strength to satisfy the electron cyclotron resonance conditions, high-energy and high-density electrons are generated, and neutral particles and ions are excited and It can promote ionization. As a result, a good quality film can be obtained by the excited and ionized particles.
実 施 例 第１図に本発明の装置の概略図を示す。１は蒸着源、
２はマイクロ波用の同軸円筒状アンテナ、３は磁場コイ
ルである。Practical Example FIG. 1 shows a schematic view of the apparatus of the present invention. 1 is a vapor deposition source,
Reference numeral 2 is a coaxial cylindrical antenna for microwaves, and 3 is a magnetic field coil.
蒸着源１は、同軸円筒状アンテナ２の内軸８と一体化
するように配置されており、蒸着源１から放出される蒸
着粒子の飛りゅう方向はマイクロ波（2.45GHz）の伝搬
方向９と一致している。また同軸円筒状アンテナ２より
伝搬されたマイクロ波の電界方向11に対して垂直方向す
なわち、蒸着粒子の飛りゅう方向と同方向に磁場（磁力
線11）を印加できるように磁場コイル３を同軸円筒状ア
ンテナ２の外周に配置した。また磁場の強度B0は、マイ
クロ波の周波数で決まる電子サイクロトロン共鳴条件
（2.45GHzの場合、B0＝0.08を満たすようにした。The vapor deposition source 1 is arranged so as to be integrated with the inner shaft 8 of the coaxial cylindrical antenna 2, and the flying direction of vapor deposition particles emitted from the vapor deposition source 1 is the propagation direction 9 of microwaves (2.45 GHz). Match. Further, the magnetic field coil 3 has a coaxial cylindrical shape so that the magnetic field (the magnetic force line 11) can be applied in the direction perpendicular to the electric field direction 11 of the microwave propagated from the coaxial cylindrical antenna 2, that is, in the same direction as the flying direction of the vapor deposition particles. It is arranged on the outer circumference of the antenna 2. The magnetic field strength B 0 was set to satisfy the electron cyclotron resonance condition (B 0 = 0.08 at 2.45 GHz) determined by the microwave frequency.
以上のような構成にして酸化インジウムの形成につい
て以下述べる。The formation of indium oxide having the above structure will be described below.
真空槽４内に酸素を導入して、1.3×10-2Paにする。
そして蒸着物６（インジウム）を入れた蒸着源１よりイ
ンジウムを蒸発させて全体の圧力を３×10-2Paにした。Oxygen is introduced into the vacuum chamber 4 to make 1.3 × 10 -2 Pa.
Then, indium was evaporated from the evaporation source 1 containing the evaporation material 6 (indium), and the total pressure was adjusted to 3 × 10 -2 Pa.
そしてマイクロ波のパワーを200Wとし、蒸着源１付近
で電子サイクロトロン共鳴放電をつくった。このように
してインジウムと酸素の励起およびイオン化された粒子
によって基板５に酸化インジウムの膜を得た。Then, the microwave power was set to 200 W and an electron cyclotron resonance discharge was created near the vapor deposition source 1. In this way, an indium oxide film was obtained on the substrate 5 by the excited and ionized particles of indium and oxygen.
その結果10-4Ωcm台の良好な導電性の酸化インジウム
膜をうることができた。As a result, a good conductive indium oxide film on the order of 10 −4 Ωcm could be obtained.
なお、実施例においては、酸化インジウムを蒸着物と
して用いたが、蒸発粒子をうるものであれば、何でもよ
く。また酸素を導入したが、その他のガスを導入しても
よくまた導入しなくてもよい。Although indium oxide was used as the vapor deposition material in the examples, any material may be used as long as it produces vaporized particles. Although oxygen is introduced, other gas may or may not be introduced.
それから、マイクロ波の導入手段として同軸円筒状の
アンテナを用いたが、蒸着源１の周辺にヘリカルアンテ
ナや、導波管を配置してもよい。Then, although the coaxial cylindrical antenna is used as the microwave introduction means, a helical antenna or a waveguide may be arranged around the vapor deposition source 1.
また、磁場を印加する手段として、ここでは磁場コイ
ルを用いたが、蒸着粒子とほぼ同じ方向に磁場を印加で
きる手段であれば何を用いてもよい。Although a magnetic field coil is used here as a means for applying a magnetic field, any means may be used as long as it can apply a magnetic field in the substantially same direction as the vapor deposition particles.
また、ここでは１つの蒸着源で構成しているが２以上
の蒸着源でもよい。Further, although one vapor deposition source is used here, two or more vapor deposition sources may be used.
また、マイクロ波を導入する位置は、蒸着源の外周に
配置したが、位置や方法はマイクロ波を導入できれば何
でもよい。Further, the position of introducing the microwave is arranged on the outer periphery of the vapor deposition source, but the position and method may be any as long as the microwave can be introduced.
発明の効果 以上のように本発明は、少なくとも１つの蒸着源の周
辺にマイクロ波を導入する手段と磁場を印加する手段と
を有したことによって、イオン化が促進されるという優
れた効果を有し、さらに本発明の蒸着装置は、蒸着源か
ら放出される蒸着粒子の飛りゅう方向とマイクロ波の伝
搬方向および磁場の印加方向をほぼ一致させ、かつ磁場
の強度を前記マイクロ波の周波数で決まる電子サイクロ
トロン共鳴（ECR）条件以上にしているため、マイクロ
波電力は効率よく吸収され、高密度・高励起プラズマを
形成でき、その結果、蒸着粒子を効率よく基板に入射さ
せることができるとともに、形成される薄膜への不純物
の混入を防止することができる。EFFECTS OF THE INVENTION As described above, the present invention has an excellent effect that ionization is promoted by having a means for introducing a microwave and a means for applying a magnetic field around at least one vapor deposition source. Further, the vapor deposition apparatus of the present invention is such that the flying direction of vapor deposition particles emitted from the vapor deposition source is substantially aligned with the microwave propagation direction and the magnetic field application direction, and the magnetic field strength is determined by the frequency of the microwave. Since the conditions are higher than the cyclotron resonance (ECR) condition, microwave power is efficiently absorbed, and high-density and high-excitation plasma can be formed. As a result, vapor deposition particles can be efficiently incident on the substrate and formed. It is possible to prevent impurities from being mixed into the thin film.
第１図は本発明の蒸着装置の断面概略図、第２図は従来
のイオンプレーティング法の蒸着装置の断面概略図であ
る。 １……蒸着源、２……同軸円筒状アンテナ、３……磁場
コイル、４……真空層、５……基板、６……蒸着物、７
……グリッド電極。FIG. 1 is a schematic cross-sectional view of a vapor deposition apparatus of the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional vapor deposition apparatus of the ion plating method. 1 ... Deposition source, 2 ... Coaxial cylindrical antenna, 3 ... Magnetic field coil, 4 ... Vacuum layer, 5 ... Substrate, 6 ... Deposition material, 7
...... Grid electrode.
Claims (3)
発源と、前記真空槽内に設置され前記蒸発源を蒸着させ
る基板と、前記真空槽内にマイクロ波を導入する手段
と、前記真空槽内に磁場を印加する手段とを有する蒸着
装置であって、前記磁場の強度を前記マイクロ波の周波
数で決まる電子サイクロトロン共鳴条件以上にし、か
つ、前記蒸発源から放出される励起された蒸発粒子の飛
りゅう方向と前記マイクロ波の伝搬方向を一致させたこ
とを特徴とする蒸着装置。1. A vacuum chamber, an evaporation source installed in the vacuum chamber, a substrate installed in the vacuum chamber to deposit the evaporation source, and means for introducing microwaves into the vacuum chamber. A vapor deposition apparatus having a means for applying a magnetic field in the vacuum chamber, the intensity of the magnetic field being equal to or higher than an electron cyclotron resonance condition determined by the frequency of the microwave, and excited by the evaporation source. A vapor deposition apparatus characterized in that the direction of flight of vaporized particles and the direction of propagation of the microwave are matched.
ンテナをマイクロ波の導入手段とすることを特徴とする
特許請求の範囲第１項記載の蒸着装置。2. The vapor deposition apparatus according to claim 1, wherein a coaxial cylindrical antenna provided on the outer periphery of the vapor deposition source is used as microwave introduction means.
体化することを特徴とする特許請求の範囲第１項又は第
２項記載の蒸着装置。3. The vapor deposition apparatus according to claim 1 or 2, wherein the vapor deposition source is integrated with an inner shaft of a coaxial cylindrical antenna.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61265937A JPH089773B2 (en) | 1986-11-07 | 1986-11-07 | Vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61265937A JPH089773B2 (en) | 1986-11-07 | 1986-11-07 | Vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63118064A JPS63118064A (en) | 1988-05-23 |
| JPH089773B2 true JPH089773B2 (en) | 1996-01-31 |
Family
ID=17424151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61265937A Expired - Lifetime JPH089773B2 (en) | 1986-11-07 | 1986-11-07 | Vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH089773B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2572270B2 (en) * | 1988-09-30 | 1997-01-16 | 新敏術事業団 | Ultra-high purity film forming equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57123968A (en) * | 1981-01-26 | 1982-08-02 | Semiconductor Energy Lab Co Ltd | Formation of zinc oxide film by plasma vapor phase method |
| JPS6187867A (en) * | 1984-10-04 | 1986-05-06 | Hitachi Ltd | sputtering equipment |
| JPS6187869A (en) * | 1984-10-05 | 1986-05-06 | Hitachi Ltd | Sputter device |
-
1986
- 1986-11-07 JP JP61265937A patent/JPH089773B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63118064A (en) | 1988-05-23 |
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